JP2892706B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for exposing a plurality of objects to be exposed with a plurality of diffracted lights formed by synchrotron radiation. With respect to the manufacturing method, an object of the present invention is to provide a method of manufacturing a semiconductor device capable of manufacturing a highly accurate semiconductor device in a short delivery time and at a low cost. A plurality of diffracted lights satisfying the Bragg condition are branched from the emitted light by irradiating one plane, and a plurality of objects to be exposed are exposed by the plurality of diffracted lights.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for exposing a plurality of objects to be exposed using a plurality of diffracted lights formed by synchrotron radiation. It relates to a manufacturing method.

In recent years, with the increase in the degree of integration of semiconductor devices, accuracy in the order of submicrons has been required in the process steps. Therefore, it is necessary to use strong light with good directivity, such as synchrotron radiation, for manufacturing a semiconductor device on the order of submicrons.

[Prior Art] Conventionally, an electron beam lithography apparatus has been generally used for manufacturing a reticle, a mask, and the like used in LSI manufacturing.
This electron beam lithography system is suitable for manufacturing semiconductor devices down to the micron order in the process steps,
In a submicron-order semiconductor device, there is a problem that an accurate pattern cannot be exposed due to diffraction, interference and the like of an electron beam.

Therefore, in the manufacture of semiconductor devices that require submicron-order accuracy, synchrotron radiation (X
Exposure of a reticle, a mask, or the like using sharp light having good directivity, such as a line, is considered.

[Problems to be Solved by the Invention] However, in the above method, only one reticle or mask can be exposed to one synchrotron radiation beam emitted from a large-sized synchrotron device, and the manufacturing cost is extremely high. In addition, there is a problem that it is not possible to shorten the delivery time.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a method of manufacturing a semiconductor device capable of manufacturing a highly accurate semiconductor device at a short delivery time and at low cost.

[Means for Solving the Problems] A synchrotron radiation light is applied to one plane of a diffractive body having a plurality of different crystal lattice planes to form a plurality of diffracted lights satisfying the Bragg condition from the radiation light. And
A plurality of objects to be exposed are exposed with the plurality of diffraction lights.

[Function] When the synchrotron radiation is irradiated onto one plane of a diffractor having a plurality of different crystal lattice planes, the radiation has an extremely single wavelength and excellent directivity. Diffracted light satisfies the Bragg condition, and a plurality of diffracted light beams having different directions are formed. By exposing a plurality of objects to be exposed with the plurality of diffracted lights, a high-precision pattern can be formed even in a semiconductor device of a submicron order without causing diffraction, interference, etc. of each diffracted light.

[Embodiment] An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic configuration diagram for explaining an exposure method in an embodiment embodying the present invention, and FIG. 2 is a sectional view of a glass holder.

As shown in FIG. 1, a glass holder 2 is erected and fixed in a first vacuum chamber 1 by a fixing member (not shown). As shown in FIG. 2, a square through-hole 3 is formed in the center of the glass holder 2, and a diffractor 4 formed by compacting single crystal silicon (Si) powder in the through-hole 3 is provided. Mated. That is, the crystal lattice planes of the single crystal powders constituting the diffracting body 4 face different directions. In the present embodiment, the longitudinal dimension a and the lateral dimension b of the through hole 3 of the glass holder 2 are each 2 cm, and the thickness dimension of the holder 2 is preferably as large as possible.

Therefore, as shown in FIG. 1, synchrotron radiation light, that is, X-rays L0 radiated from the storage ring (not shown) of the synchrotron device to this diffractor 4 is converted to an angle θ
When irradiation is performed, the diameter of the same X-ray L0 is larger than the crystal grain of each single crystal powder, so that it is applied to a plurality of crystal grains. A plurality (three in this embodiment) of diffracted lights L1 to L3 having different directions are formed.

On the other hand, in the second vacuum chamber 5, reticles 6 to 8 as an object to be exposed are arranged on an extension of the respective diffracted lights L1 to L3, and the first and second vacuum chambers 1, Boundary B of 5
The diameter of each of the diffracted lights L1 to LC is narrowed down to the diameter required for exposure by the collimators 9 to 11 provided for the irradiation.

Therefore, by moving each of the reticles 6 to 8 in the x and y arrow directions, a desired (identical or different) pattern can be exposed to each of the reticles 6 to 8.

As described above, in the present embodiment, the X-ray L0 having an extremely single wavelength satisfying the Bragg condition and having excellent directivity is irradiated to the diffractor 4 made of silicon single crystal powder whose crystal lattice planes are oriented in different directions. The X-ray L0 is diffracted at each crystal grain,
A plurality of diffracted lights L1 to L3 having different directions were formed.
Since the plurality of reticles 6 to 8 are exposed with the diffracted lights L1 to L3, a high-precision pattern can be created without causing diffraction, interference, etc. of each diffracted light even in a submicron-order semiconductor device. And a highly accurate semiconductor device can be manufactured.

Further, diffracted lights L1 to L3 are formed from the X-ray L0, and the diffracted lights L1 to L3 are formed.
Since the plurality of reticles 6 to 8 are exposed at L3, the cost can be reduced and the delivery time can be shortened.

Further, in this embodiment, a diffractor 4 formed by compacting single crystal silicon powder in the first vacuum chamber 1 is disposed, and
8 is disposed in the second vacuum 5 so that contamination of the reticles 6 to 8 due to scattering of the single crystal powder due to the irradiation of the X-ray L0 can be prevented, and at the same time, contamination and diffraction lines due to air.
The scattering of L1 to L3 can be prevented.

In the present embodiment, the diffracting element 4 is formed by pressing a single crystal powder of silicon (Si), but may be formed by pressing a single crystal powder of, for example, germanium (Ge).

In this embodiment, the objects to be exposed are the reticles 6 to 8. However, for example, a mask or a photoresist provided on a wafer may be exposed.

[Effects of the Invention] As described in detail above, according to the present invention, there is an excellent effect that a highly accurate semiconductor device can be manufactured at a short delivery time and at low cost.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram for explaining an exposure method in an embodiment embodying the present invention, and FIG. 2 is a sectional view showing a glass holder. In the figure, 2 is a glass holder, 4 is a diffractor, 6 to 8 are reticles, 9 to 11 are collimators, L0 is X-rays as synchrotron radiation, and L1 to L3 are diffracted lights.

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 21/027 G03F 7/20

Claims (1)

(57) [Claims] 1. A synchrotron radiation light is irradiated on one plane of a diffractive body having a plurality of crystal lattice planes of different directions to form a plurality of diffracted lights satisfying the Bragg condition from the radiation light. A method for manufacturing a semiconductor device, wherein a plurality of objects to be exposed are exposed by diffracted light.