JP2891559B2 - Manufacturing method of high hardness laminate for tools - Google Patents

Manufacturing method of high hardness laminate for tools

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Publication number
JP2891559B2
JP2891559B2 JP3085848A JP8584891A JP2891559B2 JP 2891559 B2 JP2891559 B2 JP 2891559B2 JP 3085848 A JP3085848 A JP 3085848A JP 8584891 A JP8584891 A JP 8584891A JP 2891559 B2 JP2891559 B2 JP 2891559B2
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JP
Japan
Prior art keywords
boron nitride
compact
low
pressure
pressure phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP3085848A
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Japanese (ja)
Other versions
JPH0570254A (en
Inventor
正治 鈴木
知己 二階堂
宏彰 丹治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Kagaku Gijutsu Shinko Jigyodan
Original Assignee
Kagaku Gijutsu Shinko Jigyodan
Denki Kagaku Kogyo KK
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Priority to JP3085848A priority Critical patent/JP2891559B2/en
Publication of JPH0570254A publication Critical patent/JPH0570254A/en
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Publication of JP2891559B2 publication Critical patent/JP2891559B2/en
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、立方晶窒化ほう素(c
BN)焼結体と硬質焼結体との接合体からなる工具用高
硬度積層体の製造方法に関するものである。
The present invention relates to cubic boron nitride (c)
BN) The present invention relates to a method for manufacturing a high-hardness laminate for a tool comprising a joined body of a sintered body and a hard sintered body.

【0002】[0002]

【従来の技術】窒化ほう素の高圧相であるcBNは、ダ
イヤモンドに次ぐ硬さ及び熱伝導率を有し、しかも化学
的に安定であることから、鉄系金属の機械加工用工具と
しての利用が進められている。この場合、cBN焼結体
自体は強度が不十分であり、また金属等へのろう付けが
できないので、通常は超硬合金等と接合された積層体と
して使用されている。
2. Description of the Related Art cBN, which is a high-pressure phase of boron nitride, has hardness and thermal conductivity next to diamond and is chemically stable, so that it is used as a tool for machining iron-based metals. Is being promoted. In this case, the cBN sintered body itself has insufficient strength and cannot be brazed to a metal or the like. Therefore, the cBN sintered body is usually used as a laminate joined with a cemented carbide or the like.

【0003】従来、上記積層体は、低圧相窒化ほう素に
触媒を添加し超高圧高温処理してcBN粉末を合成し、
Al, Co等の金属、TiN, TiC, Al2O3 等の炭化物、窒化
物、酸化物等の結合材を加え、それに超硬合金等の接合
材を隣接して配置し、再度、超高圧高温処理することに
よって製造されている。
Conventionally, the above-mentioned laminate is synthesized by adding a catalyst to low-pressure phase boron nitride and subjecting it to ultra-high pressure and high temperature processing to synthesize cBN powder,
Metals such as Al and Co, binders such as carbides, nitrides and oxides such as TiN, TiC and Al 2 O 3 are added, and a cementing material such as cemented carbide is placed adjacent to them, and then the Manufactured by high-temperature treatment.

【0004】しかし、この方法では、生成するcBN焼
結体中にcBNより硬度の小さい上記結合材が含まれる
ため硬度が小さくなりcBN本来の特性を充分に引き出
すことができず、しかも高価な超高圧高温処理を2回必
要とするために生産効率が悪いという問題点があった。
However, in this method, the cBN sintered body to be formed contains the above-mentioned binder having a lower hardness than cBN, so that the hardness is reduced, so that the inherent characteristics of cBN cannot be sufficiently brought out, and furthermore, an expensive superconducting material is required. There is a problem that the production efficiency is low because the high pressure and high temperature treatment is required twice.

【0005】特開昭63−191505号公報には、低圧相窒化
ほう素として六方晶窒化ほう素(hBN)成形体に窒化
マグネシウム触媒を添加し超高圧高温処理をしてcBN
焼結体を製造しながら、cBN焼結体と硬質焼結合金基
体とを接合する方法が提案されている。しかし、この方
法では、中間層としてTiN/Mo/TiN のような特殊なも
のを使用しないと工具特性に優れた積層体を製造するこ
とができないという問題があった。
Japanese Patent Application Laid-Open No. 63-191505 discloses that a hexagonal boron nitride (hBN) compact as a low-pressure phase boron nitride is added with a magnesium nitride catalyst and subjected to ultra-high pressure and high temperature treatment to obtain cBN.
A method of joining a cBN sintered body and a hard sintered alloy substrate while producing a sintered body has been proposed. However, this method has a problem that a laminate having excellent tool characteristics cannot be manufactured unless a special material such as TiN / Mo / TiN is used as the intermediate layer.

【0006】[0006]

【発明が解決しようとする課題】本発明の目的は、cB
N焼結体と硬質焼結体との接合体とからなる工具用高硬
度積層体を1回の超高圧高温処理で効率的に製造するこ
とにある。
An object of the present invention is to provide cB
It is an object of the present invention to efficiently manufacture a high-hardness laminate for a tool comprising an N sintered body and a joined body of a hard sintered body by one ultra-high pressure and high temperature treatment.

【0007】本発明者らは上記目的を達成するために種
々検討した結果、原料の低圧相窒化ほう素成形体とし
て、該成形体の主平面に対しc軸の選択配向度が100度
以下である低圧相窒化ほう素成形体を用いれば、接合強
度が大きく亀裂や欠けのないcBN焼結体と硬質焼結体
との接合体からなる積層体を効率よく製造できることを
見出し、本発明を完成させたものである。
The inventors of the present invention have conducted various studies to achieve the above object. As a result, as a raw material of a low-pressure phase boron nitride compact, the degree of c-axis selective orientation with respect to the main plane of the compact was 100 degrees or less. Using a certain low-pressure phase boron nitride compact, the present inventors have found that a laminate comprising a joined body of a cBN sintered body and a hard sintered body having a large joint strength and without cracks or cracks can be efficiently produced, and completed the present invention. It was made.

【0008】[0008]

【課題を解決するための手段】すなわち、本発明は、低
圧相窒化ほう素成形体と遷移金属又はその化合物からな
る中間層と硬質焼結体又は硬質成形体とを反応器内に積
み重ねて充填し、静的超高圧高温で処理して立方晶窒化
ほう素焼結体と硬質焼結体との接合体を製造するに当
り、上記低圧相窒化ほう素成形体として該成形体の主平
面に対しc軸の選択配向度が 100度以下であるものを用
いることを特徴とする工具用高硬度積層体の製造方法で
ある。
That is, the present invention relates to a low pressure phase boron nitride compact, an intermediate layer made of a transition metal or a compound thereof, and a hard sintered compact or hard compact which are stacked and filled in a reactor. Then, in producing a joined body of a cubic boron nitride sintered body and a hard sintered body by processing at a static ultra-high pressure and high temperature, the above-mentioned low-pressure phase boron nitride molded body is formed with respect to a main plane of the molded body. A method for producing a high-hardness laminate for tools, characterized in that a material having a degree of c-axis selective orientation of 100 degrees or less is used.

【0009】以下に、本発明についてさらに詳しく説明
する。本発明で使用される原料の低圧相窒化ほう素成形
体は、c軸の選択配向度の値が小さければ小さい程良
く、少くとも 100度以下のものでなければならない。こ
の理由は、配向度が 100度をこえると、後記の実施例で
示すように、得られた積層体に亀裂及び欠けが発生した
り、接合強度が充分でなくなったりするからである。
Hereinafter, the present invention will be described in more detail. The raw material low-pressure phase boron nitride compact used in the present invention should have a smaller value of the degree of selective orientation of the c-axis, and should have a value of at least 100 degrees or less. The reason for this is that if the degree of orientation exceeds 100 degrees, cracks and chips are generated in the obtained laminate, or the bonding strength is not sufficient, as will be shown in Examples described later.

【0010】本発明において、「低圧相窒化ほう素」と
は、ほう素原子と窒素原子とが交互に結合することによ
って形成された六角網面の積層構造をもつものを意味
し、具体的にはhBN、乱層構造の窒化ほう素(tB
N)、菱面体晶の窒化ほう素(rBN)の単体又は混合
物である。
In the present invention, "low-pressure phase boron nitride" means a layered structure of hexagonal mesh planes formed by alternately bonding boron atoms and nitrogen atoms. Is hBN, turbostratic boron nitride (tB
N), a simple substance or a mixture of rhombohedral boron nitride (rBN).

【0011】本発明において「c軸の選択配向度」と
は、上記の低圧相窒化ほう素を構成する結晶子のc軸
が、どの程度、低圧相窒化ほう素成形体の主平面に垂直
な方向を向いているかを表す尺度である。c軸の選択配
向度及びその測定法については、米国特許第3,578,403
号明細書、「Physica139 & 104B (1986) P256〜258
」、「X線回折の手引 P79〜82」 (理学電機(株)198
2年11月30日発行)に説明されているが、以下、本発明
で採用する選択配向度について詳しく説明する。
In the present invention, the term “degree of c-axis selective orientation” means that the degree of the c-axis of the crystallite constituting the low-pressure phase boron nitride is perpendicular to the main plane of the low-pressure phase boron nitride compact. It is a scale that indicates whether you are facing the direction. Regarding the degree of c-axis orientation and its measurement method, see US Pat. No. 3,578,403.
No., `` Physica139 & 104B (1986) P256-258
”,“ Guide to X-ray diffraction P79-82 ”(Rigaku Denki Co., Ltd. 198)
(Published on November 30, 2012), the preferred orientation degree employed in the present invention will be described in detail below.

【0012】c軸の選択配向度の測定は、図1に示すよ
うに、低圧相窒化ほう素成形体の主平面に対して円柱の
軸方向が平行になるように試料を切り出し、それをX線
回折装置に設置し、ωスキャン法によって行う。「ωス
キャン法」とは、特定の回折線を捉えるようにX線源、
回折計数管を固定し、円柱形状の試料を円柱軸の周りに
スキャンして、各角度ωでの回折強度を測定する方法で
ある。
As shown in FIG. 1, the measurement of the degree of selective orientation of the c-axis is performed by cutting a sample such that the axial direction of the cylinder is parallel to the main plane of the low-pressure phase boron nitride compact, and the sample is cut out by X. It is installed in a line diffractometer and performed by the ω scan method. The “ω scan method” is an X-ray source that captures specific diffraction lines,
In this method, a diffraction counter tube is fixed, a cylindrical sample is scanned around a cylindrical axis, and the diffraction intensity at each angle ω is measured.

【0013】本発明においては、回折線として、特に低
圧相窒化ほう素の面間隔が3.33オングストローム付近、
すなわちhBN、tBNの場合は(002) 、rBNの場合
には(003) の回折線を用いる。
In the present invention, as the diffraction line, particularly, the plane spacing of low-pressure phase boron nitride is around 3.33 angstroms,
That is, the diffraction line of (002) is used for hBN and tBN, and the diffraction line of (003) is used for rBN.

【0014】仮に、低圧相窒化ほう素成形体の中で、そ
れぞれの結晶子が全くランダムに向いていれば、回折強
度は角度ωに依存せず一定となるため、回折図は図2の
(A)で示されるように平坦なものとなる。他方、それ
ぞれの結晶子が配向していれば、回折図は強度分布をも
つようになる。特にc軸が低圧相窒化ほう素成形体の主
平面に対し垂直な方向に配向していれば、図2の(B)
に示すように、解析図はωが0度になる位置を最大強度
とするピークとして観測される。
If the crystallites are oriented at random in the low-pressure phase boron nitride compact, the diffraction intensity is constant without depending on the angle ω. It becomes flat as shown by A). On the other hand, if each crystallite is oriented, the diffractogram will have an intensity distribution. In particular, if the c-axis is oriented in a direction perpendicular to the main plane of the low-pressure phase boron nitride molded product, it can be seen from FIG.
As shown in the figure, the analysis diagram is observed as a peak having the maximum intensity at the position where ω becomes 0 degrees.

【0015】本発明において、「c軸の選択配向度」
は、上記ωが0度になる位置を最大強度とする回折ピー
クの半価幅θ度として定義される。すなわち、θ度が小
さいほど低圧相窒化ほう素の結晶子のc軸が低圧相窒化
ほう素成形体の主平面に対し垂直な方向に良く配向して
いることを示す。
In the present invention, “the degree of c-axis selective orientation”
Is defined as the half-value width θ degrees of the diffraction peak having the maximum intensity at the position where ω becomes 0 degrees. That is, the smaller the θ degree, the better the c-axis of the crystallite of low-pressure phase boron nitride is oriented in a direction perpendicular to the main plane of the low-pressure phase boron nitride compact.

【0016】本発明で使用される窒化ほう素のc軸の選
択配向度が主平面に対し 100度以下である低圧相窒化ほ
う素成形体は、例えば次のようにして得ることができ
る。 (1) 低圧相窒化ほう素のc軸の選択配向度が主平面に対
し 100度以下である熱分解窒化ほう素板:熱分解窒化ほ
う素は、一般にCVD法によって合成されるものでhB
N,tBN,rBNの単体又は混合物からなり、工業的
に広く生産されている物質であって、本発明において使
用する所要のc軸の選択配向度を有する熱分解窒化ほう
素成形体はCVD条件を調節することによっても、また
市場からでも入手することができる。 (2) 低圧相窒化ほう素の粉末をc軸の選択配向度が低圧
相窒化ほう素成形体の主平面に対し 100度以下になるよ
うに成形したもの:例えば、通常の鱗片状の粉末を成形
金型に少量ずつ充填しながら、そのつど一軸方向に圧力
を多数回加えることによって得ることができる。
The low-pressure phase boron nitride molded article in which the degree of selective orientation of the c-axis of boron nitride used in the present invention is 100 degrees or less with respect to the main plane can be obtained, for example, as follows. (1) Pyrolytic boron nitride plate in which the degree of c-axis selective orientation of low-pressure phase boron nitride is 100 degrees or less with respect to the main plane: Pyrolytic boron nitride is generally synthesized by a CVD method and is hB.
The thermally decomposed boron nitride molded body made of a single substance or a mixture of N, tBN, and rBN, which is industrially widely produced, and has a required degree of c-axis selective orientation used in the present invention, is subjected to CVD conditions. Can be obtained either by adjusting or on the market. (2) A low-pressure phase boron nitride powder molded so that the degree of selective orientation of the c-axis is 100 degrees or less with respect to the main plane of the low-pressure phase boron nitride compact: For example, a normal scale-like powder is used. It can be obtained by applying a pressure many times in one axial direction each time while filling the molding die little by little.

【0017】本発明において、cBN焼結体に接合され
る硬質焼結体としては、cBN焼結体の補強材として充
分な強度及び硬度を有し、またバイトなどのシャンクに
ろう付けできるものであればよい。具体的には、WC, Mo
C, TiC, TaC 等の超硬合金があげられ、中でもWCが最適
である。また、本発明で行われる超高圧高温処理におい
ては、硬質粉末が十分に焼結されるので、上記の硬質粉
末にCo等の適切なバインダーを添加し板状に成形して得
られる硬質成形体を反応器に充填してもよい。
In the present invention, the hard sintered body joined to the cBN sintered body has sufficient strength and hardness as a reinforcing material for the cBN sintered body and can be brazed to a shank such as a cutting tool. I just need. Specifically, WC, Mo
Cemented carbides such as C, TiC, and TaC are mentioned, and WC is most preferable. Further, in the ultra-high pressure and high temperature treatment performed in the present invention, since the hard powder is sufficiently sintered, a hard compact obtained by adding a suitable binder such as Co to the above hard powder and forming the plate into a plate shape. May be charged to the reactor.

【0018】本発明で使用される中間層としては、cB
N焼結体及び硬質焼結体との濡れ性が良好で、高い接合
強度が得られるものであればよい。このような物質の具
体例としては、第IV, V, VI族の遷移金属及びそれを含
む化合物をあげることができる。中でも、Ti, Zr, Nb,
TiN, ZrN, NbN, TaN, ZrB2, NbB2が好ましい。中間層の
厚さとしては 0.001〜1mmが好ましい。0.001mm 未満で
は十分な接合強度を得ることができず、一方、1mmより
厚いと工具として使用した場合にこの部分に応力が集中
して剥離の原因となる。このような中間層は、上記物質
の焼結体であってもよいし、粉末の成形体であってもよ
い。また、中間層を、低圧相窒化ほう素成形体、硬質焼
結体又は硬質成形体のいずれか一方又は両方の表面にC
VD法等によって堆積させた薄膜によって形成すること
もできる。
The intermediate layer used in the present invention is cB
Any material can be used as long as it has good wettability with the N sintered body and the hard sintered body and can obtain high bonding strength. Specific examples of such substances include transition metals of Groups IV, V and VI and compounds containing the same. Among them, Ti, Zr, Nb,
TiN, ZrN, NbN, TaN, ZrB 2 and NbB 2 are preferred. The thickness of the intermediate layer is preferably from 0.001 to 1 mm. If the thickness is less than 0.001 mm, sufficient bonding strength cannot be obtained. On the other hand, if the thickness is more than 1 mm, when used as a tool, stress concentrates on this portion and causes peeling. Such an intermediate layer may be a sintered body of the above substance or a powder compact. In addition, the intermediate layer is formed on one or both surfaces of the low-pressure phase boron nitride compact, the hard sintered compact, and the hard compact by applying C
It can also be formed by a thin film deposited by a VD method or the like.

【0019】本発明における静的超高圧高温処理は、例
えば次のようにして行われる。低圧相窒化ほう素成形
体、中間層及び硬質焼結体又は硬質成形体を、それぞれ
の主平面が平行になるように超高圧高温反応器内に積み
重ねて充填し、ベルト型高温発生装置内に設置する。そ
の後、まず圧力を続いて温度を上昇させ、所望の温度・
圧力において一定時間保持する。その条件としては、低
圧相窒化ほう素成形体がcBNに転換しかつ十分な接合
強度を持った積層体が得られる条件であり、具体的に
は、圧力 6.5〜8.0 GPa、温度2000〜2400℃、保持時
間5〜60分間である。処理後に、まず温度を続いて圧力
をそれぞれ室温及び1気圧に戻し、生成した工具用高硬
度積相体を取り出す。
The static ultra-high pressure and high temperature treatment in the present invention is performed, for example, as follows. The low-pressure phase boron nitride compact, the intermediate layer and the hard sintered compact or hard compact are stacked and filled in an ultra-high pressure high-temperature reactor so that their main planes are parallel to each other. Install. After that, the pressure is first increased, and then the temperature is increased.
Hold at pressure for a period of time. The conditions are such that the low-pressure phase boron nitride compact is converted into cBN and a laminate having sufficient bonding strength is obtained. Specifically, the pressure is 6.5 to 8.0 GPa, the temperature is 2000 to 2400 ° C. And a retention time of 5 to 60 minutes. After the treatment, the temperature is firstly restored, then the pressure is returned to room temperature and 1 atm, respectively, and the resulting high-hardness product for a tool is taken out.

【0020】[0020]

【作用】本発明によって得られた工具用高硬度積層体に
は亀裂及び欠けがなく、接合強度が大となる理由は、以
下のように考えられる。低圧相窒化ほう素及びcBNの
真密度は、それぞれ2.25g/cm3 及び3.48g/cm3 であ
るので、静的超高圧高温下において低圧相窒化ほう素が
cBN焼結体に移転する際に大きな体積変化が生じる。
低圧相窒化ほう素は、結晶構造に大きな異方性を持った
材料であり、cBNへの構造変化の際には、a軸方向に
はほとんど変化せず、c軸方向に大きく収縮するので、
このような体積変化が起こる。
The reason why the high-hardness laminate for a tool obtained according to the present invention has no cracks and chips, and has high bonding strength is as follows. True density of the low-pressure phase nitride boron and cBN, since each is 2.25 g / cm 3 and 3.48 g / cm 3, when the low-pressure phase boron nitride is transferred to the cBN sintered body in a static ultrahigh pressure high temperature Large volume changes occur.
Low-pressure phase boron nitride is a material having a large anisotropy in the crystal structure. When the structure changes to cBN, it hardly changes in the a-axis direction and shrinks greatly in the c-axis direction.
Such a volume change occurs.

【0021】本発明におけるように、c軸方向に選択配
向した低圧相窒化ほう素成形体を用いると、該成形体面
と平行な方向はa軸方向であるのでこの方向にはほとん
ど体積変化が起こらず、中間層との接合界面ではほとん
どずれが生じないために、中間層との接合強度が大きく
なる。すなわち、密度が高く選択配向した低圧相窒化ほ
う素成形体を用いると、cBNに転換する際の体積変化
が小さくなり、その際に起こる中間層との接合界面にお
けるずれが小さくなるために、亀裂及び欠けがなく、高
い接合強度を有する積層体が得られる。
When a low-pressure phase boron nitride compact having a preferred orientation in the c-axis direction is used as in the present invention, the direction parallel to the surface of the compact is the a-axis direction, and almost no volume change occurs in this direction. In addition, since almost no displacement occurs at the bonding interface with the intermediate layer, the bonding strength with the intermediate layer increases. That is, when a low-pressure phase boron nitride compact having a high density and selective orientation is used, a change in volume at the time of conversion to cBN is small, and a shift at a bonding interface with an intermediate layer at that time is small, so that a crack is generated. A laminate having high bonding strength without chipping is obtained.

【0022】以下に、実施例及び比較例について本発明
をさらに具体的に説明する。
Hereinafter, the present invention will be described more specifically with reference to Examples and Comparative Examples.

【0023】実施例1 cBN焼結体の原料(低圧相窒化ほう素成形体)とし
て、c軸の選択配向度が5度の市販の熱分解窒素ほう素
(P−BN)板から直径17mm、厚さ1mmの円板を切り出
した。中間層として、市販のNBN粉末を成形して直径
17mm、厚さ0.2 mmの円板を作製した。硬質焼結体の原料
(硬質成形体)として、WC粉末にCo粉末を1重量%添
加して直径17mm、厚さ0.2 mmの円板を成形した。
Example 1 As a raw material (a low-pressure phase boron nitride compact) of a cBN sintered body, a commercially available pyrolytic nitrogen-boron (P-BN) plate having a c-axis selective orientation of 5 degrees was used. A disk having a thickness of 1 mm was cut out. As an intermediate layer, commercially available NBN powder is molded and
A disk having a thickness of 17 mm and a thickness of 0.2 mm was produced. As a raw material of a hard sintered body (hard molded body), 1 wt% of Co powder was added to WC powder to form a disk having a diameter of 17 mm and a thickness of 0.2 mm.

【0024】上記のP−BN円板、中間層円板及び硬質
成形体円板を、加熱ヒーターを兼ねた円筒型黒鉛製超高
圧高温反応器内に円板の主平面が平行になるように積み
重ねて充填し、ベルト型高温発生装置内に設置した。
The above-mentioned P-BN disk, intermediate layer disk and hard compact disk are placed in a cylindrical graphite ultra-high pressure high temperature reactor also serving as a heater so that the principal planes of the disks are parallel to each other. Stacked and filled, and placed in a belt-type high-temperature generator.

【0025】次いで、まず圧力を続いて温度を上昇さ
せ、圧力7.5 GPa、温度2300℃、保持時間30分の条件
で超高圧高温処理をした後、まず温度を続いて圧力をそ
れぞれ室温及び1気圧まで戻し、得られた積層体を取り
出し、光学顕微鏡により亀裂及び欠けの発生状況を調べ
た。また接合状態を調べるために、工具インサート(形
状:JIS型番 TNGN332)を作製して切削試験
(切削条件:JIS B4011)を行い、接合面での
剥離の有無を調べた。それらの結果を表1に示す。な
お、表1において、「配向度」とは、c軸の選択配向度
を意味する。
Then, the pressure is first increased, then the temperature is increased. After the ultra-high pressure and high temperature treatment is performed under the conditions of a pressure of 7.5 GPa, a temperature of 2300 ° C., and a holding time of 30 minutes, the temperature is first increased, and then the pressure is increased to room temperature and 1 atm , And the obtained laminate was taken out and examined for occurrence of cracks and chips by an optical microscope. In addition, in order to examine the joining state, a tool insert (shape: JIS model number TNGN332) was prepared, and a cutting test (cutting condition: JIS B4011) was performed to check for the presence or absence of peeling at the joining surface. Table 1 shows the results. In Table 1, "degree of orientation" means the degree of selective orientation of the c-axis.

【0026】[0026]

【表1】 [Table 1]

【0027】実施例2〜5 c軸の選択配向度が33度、62度、91度及び 100度のP−
BN円板を用いた点以外は、実施例1と同様にして行っ
た。
Examples 2 to 5 P-type crystals having a c-axis orientation of 33 degrees, 62 degrees, 91 degrees and 100 degrees
Except that a BN disk was used, the procedure was the same as in Example 1.

【0028】実施例6〜7 超高圧高温処理条件を表1に示す条件とした点以外は、
実施例5と同様にして行った。
Examples 6 and 7 Except that the ultrahigh-pressure and high-temperature treatment conditions were the conditions shown in Table 1,
Performed in the same manner as in Example 5.

【0029】実施例8〜10 中間層円板として、市販のNb板、Ti板又はZr板から切り
出したものを用いた点以外は、実施例5と同様にして行
った。
Examples 8 to 10 The same procedures as in Example 5 were carried out except that a commercially available Nb plate, Ti plate or Zr plate was used as the intermediate layer disk.

【0030】実施例11〜15 中間層円板として、市販のTiN 粉末、ZrN粉末、TaN 粉
末、NbB2粉末又はZrB2粉末を成形したものを用いた点以
外は、実施例5と同様にして行った。
Examples 11 to 15 In the same manner as in Example 5, except that a commercially available TiN powder, ZrN powder, TaN powder, NbB 2 powder or ZrB 2 powder was used as an intermediate layer disk. went.

【0031】実施例16 低圧相窒化ほう素成形体として、市販のhBN粉末(電
気化学工業(株)製GPグレード)を成形金型に少量ず
つ充填しながらそのつど一軸方向に3回の圧力(100 M
Pa)を加えてc軸の選択配向度が100 度の円板を用い
た点以外は、実施例1と同様にして行った。
Example 16 As a low-pressure phase boron nitride compact, a commercially available hBN powder (GP grade, manufactured by Denki Kagaku Kogyo Co., Ltd.) was charged little by little into a molding die, and a pressure (three times) in one axial direction was applied each time. 100 M
Pa) was performed in the same manner as in Example 1 except that a disk having a c-axis selective orientation of 100 ° was used.

【0032】比較例1 c軸の選択配向度が119 度のP−BN円板を用いた点以
外は、実施例1と同様にして行った。その結果、得られ
た積層体には、外観上の異常は認められなかったが、切
削試験中にcBN焼結体が中間層の接合面から剥離し
た。
Comparative Example 1 The same procedure as in Example 1 was carried out except that a P-BN disk having a c-axis orientation degree of 119 ° was used. As a result, no abnormality in appearance was observed in the obtained laminate, but the cBN sintered body was separated from the joint surface of the intermediate layer during the cutting test.

【0033】比較例2 c軸の選択配向度が135 度のP−BN円板を用いた点以
外は、実施例1と同様にして行った。その結果、得られ
た積層体のcBN焼結体部分に数本の割れ目が入ってい
た。
Comparative Example 2 The same procedure as in Example 1 was carried out except that a P-BN disk having a c-axis selective orientation of 135 ° was used. As a result, several cracks were formed in the cBN sintered body portion of the obtained laminate.

【0034】[0034]

【発明の効果】本発明によれば、cBN焼結体と硬質焼
結体との接合体からなる工具用高硬度積層体を1回の超
高圧高温処理によって製造することがてき、しかも高い
接合強度を有しかつ亀裂及び欠けのないものを得ること
ができる。
According to the present invention, a high-hardness laminate for a tool comprising a bonded body of a cBN sintered body and a hard sintered body can be manufactured by one high-pressure and high-temperature treatment, and a high bonding strength can be obtained. A product having strength and without cracks and chips can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】低圧相窒化ほう素成形体のc軸の選択配向度を
測定する方法を示した説明図である。
FIG. 1 is an explanatory view showing a method for measuring the degree of selective orientation of the c-axis of a low-pressure phase boron nitride compact.

【図2】ωスキャン法による低圧相窒化ほう素成形体の
回折図である。
FIG. 2 is a diffraction diagram of a low-pressure phase boron nitride compact by an ω-scan method.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 丹治 宏彰 東京都町田市旭町3丁目5番1号 電気 化学工業株式会社 総合研究所内 (56)参考文献 特開 昭63−191632(JP,A) 特開 平2−199072(JP,A) 特開 昭63−202444(JP,A) (58)調査した分野(Int.Cl.6,DB名) C04B 37/00 C04B 35/626 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Hiroaki Tanji 3-5-1 Asahicho, Machida-shi, Tokyo Denki Kagaku Kogyo Co., Ltd. (56) References JP-A-63-191632 (JP, A) JP-A-2-199072 (JP, A) JP-A-63-202444 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) C04B 37/00 C04B 35/626

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 低圧相窒化ほう素成形体と遷移金属又は
その化合物からなる中間層と硬質焼結体又は硬質成形体
とを反応器内に積み重ねて充填し、静的超高圧高温で処
理して立方晶窒化ほう素焼結体と硬質焼結体との接合体
を製造するに当り、 上記低圧相窒化ほう素成形体として該成形体の主平面に
対しc軸の選択配向度が 100度以下であるものを用いる
ことを特徴とする工具用高硬度積層体の製造方法。
1. A low-pressure phase boron nitride compact, an intermediate layer made of a transition metal or a compound thereof and a hard sintered compact or a hard compact are stacked and filled in a reactor, and treated at a static ultra-high pressure and high temperature. In producing a joined body of a cubic boron nitride sintered body and a hard sintered body, the low pressure phase boron nitride molded body has a c-axis selective orientation degree of 100 degrees or less with respect to a main plane of the molded body. A method for producing a high-hardness laminate for tools, characterized by using:
JP3085848A 1991-03-27 1991-03-27 Manufacturing method of high hardness laminate for tools Expired - Fee Related JP2891559B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3085848A JP2891559B2 (en) 1991-03-27 1991-03-27 Manufacturing method of high hardness laminate for tools

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3085848A JP2891559B2 (en) 1991-03-27 1991-03-27 Manufacturing method of high hardness laminate for tools

Publications (2)

Publication Number Publication Date
JPH0570254A JPH0570254A (en) 1993-03-23
JP2891559B2 true JP2891559B2 (en) 1999-05-17

Family

ID=13870297

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
JP (1) JP2891559B2 (en)

Also Published As

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