JP2888029B2 - Angular velocity sensor - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an angular velocity sensor suitable for detecting, for example, the rotational direction and attitude of a vehicle or the like.

[0002]

2. Description of the Related Art Generally, as an angular velocity sensor used for detecting a rotation direction of a vehicle or the like, for example, Japanese Patent Publication No.
No. 74926, JP-A-61-114123, and the like.

FIG. 19 shows, as an example of a conventional angular velocity sensor, a semiconductor rotation sensor described in Japanese Patent Publication No. 3-74926.

In the drawing, reference numeral 1 denotes a substrate made of a silicon material, and the substrate 1 is a lower substrate 1 located on the lower side in the drawing.
A and an upper substrate 1B formed on the lower substrate 1A, and a space 1C is formed between each of the substrates 1A and 1B to allow vibration of a cantilever 2 described later.

Reference numeral 2 denotes a cantilever integrally formed on the upper substrate 1B of the substrate 1 by using an etching technique or the like.
The base end 2A side is a fixed end fixed to the upper substrate 1B, and the front end 2B side is a free end that can vibrate vertically upward and downward with respect to the substrate 1. On the base end 2A side of the cantilever 2, a rectangular slit 3 is formed, which is located at the center in the width direction and extends in the longitudinal direction.

Reference numeral 4 denotes an electrode formed on the upper surface of the tip 2B of the cantilever 2, and the electrode 4 is connected to an oscillation circuit (not shown) for oscillating a predetermined frequency signal. When a frequency signal from the oscillation circuit is applied to the cantilever 2 via the electrode 4, the cantilever 2 vibrates upward and downward by electrostatic force.

[0007] Reference numerals 5 and 5 denote piezoresistive elements located on the left and right sides of the slit 3 and on the base end 2A side of the cantilever 2, respectively. The stress generated in the beam 2 is detected as a change in resistance value, and this is output as a rotational angular velocity to a signal processing circuit (not shown).

The angular velocity sensor according to the prior art has the above-described configuration. When a predetermined frequency signal is applied from the oscillation circuit via the electrode 4, an electrostatic force is generated, whereby the tip 2 B of the cantilever 2 is moved. For example, it vibrates upward and downward perpendicular to the substrate 1 at its own resonance frequency. When a rotational force T about the rotation axis O is applied to the substrate 1 in this state, a twist (stress) is generated in the cantilever 2 by Coriolis forces F and F ', and the twist due to the rotation is caused by a slit. To the left and right, respectively, as compressive stress and tensile stress. Accordingly, each piezoresistive element 5 outputs a signal corresponding to the compressive stress and the tensile stress, and detects the angular velocity of the rotational force T.

[0009]

In the angular velocity sensor according to the prior art described above, a cantilever 2 is integrally formed on a substrate 1 made of a silicon material by using an etching technique or the like. By vibrating downward,
Each piezoresistive element 5 detects a stress corresponding to the angular velocity of the rotational force T. However, since the cantilever 2 is vibrated vertically upward and downward with respect to the substrate 1 in a three-dimensional configuration, the excitation structure is complicated, and the viscous resistance of air is likely to occur.

Therefore, according to the above-described prior art, the viscous resistance force of the air generated when the cantilever 2 vibrates becomes large, and the energy for vibrating the cantilever 2 is wasted. However, there is a problem that the energy efficiency is extremely low. Further, since the amplitude of the cantilever 2 cannot be increased due to the viscous resistance, there is a problem that the sensitivity of each piezoresistive element 5 for detecting the angular velocity is low.

The present invention has been made in view of the above-mentioned problems of the prior art, and it is possible to effectively reduce the viscous resistance force of gas applied to a vibrating body to improve the detection sensitivity, and to form a compact overall structure. It is an object of the present invention to provide an angular velocity sensor capable of performing the following.

[0012]

Means for Solving the Problems In order to solve the above-mentioned problems, the present invention employs a structure including a substrate and a first substrate.
A first vibrating member supported via a supporting beam of the first vibrating member and capable of vibrating in a direction parallel to the substrate;
A second vibrating body supported in parallel via a supporting beam of the first vibrating body and capable of vibrating in a direction orthogonal to the vibration direction of the first vibrating body; And a displacement detecting means for detecting a displacement of the second vibrating body.

[0013]

In a state where the first vibrating body is vibrating in the direction parallel to the substrate by the vibration generating means, when the entire sensor is rotated around a rotation axis perpendicular to the substrate, the second vibrating body becomes: The first vibrator vibrates in a direction orthogonal to the vibration direction of the first vibrator by Coriolis force corresponding to the angular velocity of the rotational force. Then, the displacement amount detecting means detects a displacement amount of the second vibrating body during vibration, and outputs this as an angular velocity signal of the rotational force.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.

First, FIG. 1 to FIG. 12 show a first embodiment of the present invention.

In the figure, reference numeral 11 denotes a substrate made of a silicon material or the like, and the substrate 11 is a lower substrate 11A located on the lower side.
And an upper substrate 11C provided above the lower substrate 11A via a support frame 11B made of an oxide film 27 described later, and a space 1 is provided between the substrates 11A and 11C.
1D has been defined. The upper substrate 1 of the substrate 11
1C has a predetermined thickness t, and as shown in FIG. 2, a first vibrating body 12, a first supporting beam 13, a second vibrating body 14, a second supporting beam 15 and the like, which will be described later. Each is integrally formed by an etching technique or the like.

Reference numeral 12 denotes a first vibrator integrally formed on the upper substrate 11C of the substrate 11 and provided so as to be capable of vibrating in a direction parallel to the upper substrate 11C. And a pair of arms 12B, 12B extending in the X-axis direction from both ends of the frame 12A. The arms 12B are supported by the first support beams 13, 13 from the Y-axis direction. And the first
Is vibrated in the X-axis direction in parallel with the upper substrate 11C by being supported by the four support beams 13 in the Y-axis direction.

Each of the first support beams 13 is formed in a long plate shape having a predetermined length L1, a width W1, and a thickness t, and has a predetermined elastic modulus.

Reference numeral 14 denotes a second vibrating member which is provided in the frame portion 12A of the first vibrating member 12, is provided on substantially the same plane as the first vibrating member 12, and is formed in a rectangular flat plate shape. As shown in FIG. 3, each of the second vibrating members 14 is formed by a pair of second supporting beams 15, 15,... Arranged in the X-axis direction. It is supported in parallel to the arm 12B. The second vibrating body 14 is supported by each of the second support beams 15, so that the first vibrating body 1
Direction (Y-axis direction) orthogonal to the vibration direction 2 (X-axis direction)
It is possible to vibrate.

Here, each of the second support beams 15 is formed in a long plate shape having a predetermined length L2, a width W2, and a thickness t, and has a predetermined elastic modulus. The resonance frequency of the second vibrating body 14 is substantially matched with the excitation frequency of the vibration generating units 16 and 16 described later, thereby increasing the sensitivity of the second vibrating body 14 to Coriolis force. In addition, the base end of each of the second support beams 15 is the first support beam.
Are connected to the respective arm portions 12B of the vibrating body 12, and the distal end side thereof is connected to the second vibrating body 14.

In FIG. 1, 16 and 16 indicated by two-dot chain lines are first
FIG. 4 shows a vibration generating section as a vibration generating means provided on the upper substrate 11C of the substrate 11 located on both sides of each arm portion 12B of the vibrating body 12; A plurality of protrusions 17A, 17A,... Provided on the distal end side of each arm 12B of the first vibrating body 12 and extending in the X-axis direction.
A movable-side conductive portion 17 formed apart from each other in the Y-axis direction;
The upper substrate 11 of the substrate 11 facing the movable side conductive portion 17
C, and comprises a fixed-side conductive portion 18 formed with a plurality of projections 18A, 18A,... In addition, each conductive part 1
Reference numerals 7 and 18 are connected to oscillation circuits (not shown) formed on the substrate 11 via printed wiring (metal wiring) 19 and 20, respectively.

Each of the vibration generators 16 applies a predetermined frequency signal matching the resonance frequency of the second vibrator 14 from the oscillation circuit to each of the conductive parts 17 and 18 via the printed wirings 19 and 20. Then, each conductive portion 1 as an electrode
An electrostatic force is generated between 7 and 18, and the first vibrating body 12 is vibrated in the X-axis direction together with the second vibrating body 14 by the electrostatic force.

Reference numerals 21, 21,... Denote displacement detectors as displacement detectors provided on the base end side of the second support beam 15, respectively. As shown in FIG. 5, piezos are disposed on both sides in the width direction at the base end side of the second support beam 15 and formed to extend in the length direction (X-axis direction) of the second support beam 15. Diffusion resistors 22, 22 as resistance elements, and contact holes 23, 23 provided at both ends of each of the diffusion resistors 22, respectively.
The respective diffusion resistors 22 are connected to the substrate 11 via printed wirings 24, 25, 26 connected to the respective contact holes 23.
Are connected to a signal processing circuit (not shown).

When the second vibrating body 14 is displaced (vibrated) in the Y-axis direction by the Coriolis force due to the rotation, each of the displacement amount detecting sections 21 is generated in each of the second support beams 15. It detects distortion (compressive stress and tensile stress) and outputs this as an angular velocity signal to a signal processing circuit. Here, since the respective diffusion resistors 22 of the respective displacement amount detectors 21 are provided at both ends in the width direction of the second support beam 15, a compressive stress acts on one diffusion resistor 22. On the other hand, an opposite tensile stress acts on the other diffusion resistors 22.
Accordingly, since the resistance change rates of the respective diffusion resistors 22 due to the piezoresistance effect have opposite signs, the signal processing circuit compares and calculates the resistance change rates of the two to obtain the second resistance change rate corresponding to the Coriolis force proportional to the angular velocity. Y of the vibrator 14 of 2
The displacement amount in the axial direction, that is, the amplitude can be obtained.

The angular velocity sensor according to the present embodiment has the above-described configuration.
An example in which single crystal silicon is used will be described with reference to FIGS.

First, in the oxide film forming step shown in FIG. 6, an oxide film 27 is formed on the upper surface side of the lower substrate 11A of the substrate 11 made of a single crystal silicon material by using, for example, a thermal oxidation method.
To form

Next, in the support frame forming step shown in FIG. 7, the oxide film 27 formed in the oxide film forming step is removed by etching except for the peripheral portion thereof, and the rectangular support frame 1 is removed.
Form 1B.

In the bonding step shown in FIG. 8, a wafer 28 made of single-crystal silicon having a square plate shape formed in another step is mounted on the upper side of the lower substrate 11A via the support frame 11B. The two are joined and fixed by a direct joining technique.

Further, in the upper substrate forming step shown in FIG. 9, the wafer 28 bonded in the substrate bonding step is uniformly polished to form the upper substrate 11C having a predetermined thickness t.

Next, in the element forming step shown in FIG. 10, a vibration generating section as an element is formed on the upper surface side of the upper substrate 11C formed in the upper substrate forming step by using an impurity introduction technique, a photolithography technique or the like. 16. Displacement detector 2
1. Form printed wirings 19, 20, 24, 25, 26 (not shown) and the like.

Finally, in the vibrating body forming step shown in FIG. 11, the upper substrate 11C on which the vibration generating section 16 and the like are formed in the element forming step is etched, so that as shown in FIG. 14 and the supporting beams 13 and 15 are formed. At this time, the projections 17A and 18A of the conductive portions 17 and 18 are also formed.

Next, the operation of the thus formed angular velocity sensor according to the present embodiment will be described with reference to FIG.

First, FIG. 12 schematically shows the mechanical structure of the angular velocity sensor according to the present embodiment, and the Y-shaped upper support 11C is attached to the upper substrate 11C by the first support beams 13 which are elastic members.
In the first vibrating body 12 supported at four points from the axial direction, the second vibrating body 14 is supported at four points from the X-axis direction by respective second support beams 15 as other elastic bodies.

Next, each of the vibration generators 16 shown in FIGS.
When a predetermined frequency signal is applied from the oscillating circuit, an electrostatic force is generated between the conductive portions 17 and 18, whereby the first vibrating body 12 is supported by the first
Vibrates in the X-axis direction at a frequency substantially equal to the resonance frequency of the second vibrating body 14.

Then, as shown in FIG. 1, in a state where each of the vibrators 12 and 14 is vibrated in the X-axis direction, as shown in FIG.
The vibrating member 14 receives Coriolis force proportional to the angular velocity generated by the rotational force, and is supported by each of the second support beams 15 while being orthogonal to the vibration direction of the first vibrating member 12 on the same plane. In the Y-axis direction.

As a result, a distortion corresponding to the amount of displacement of the second vibrating body 14 is generated in each second support beam 15, and each displacement amount detecting section 21 detects the compressive stress and the tensile stress due to the distortion. Detection is performed using the piezoresistance effect of each diffusion resistor 22, and this is output to a signal processing circuit as an angular velocity signal. The signal processing circuit processes a signal from the displacement detector 21 provided on each of the second support beams 15, 15,. , Torsion, etc., and corrects the angular velocity signal and outputs it externally.

Thus, according to the present embodiment, the upper substrate 11C made of a silicon material provided on the lower substrate 11A made of a silicon material via the space 11D by using a semiconductor fine processing technique such as an etching technique. The first beams supported by the first support beams 13 so as to be able to vibrate in the X-axis direction.
The second vibrating member 12 is supported by the first vibrating member 12 by the second support beams 15 so as to be able to vibrate in the Y-axis direction orthogonal to the vibration direction of the first vibrating member 12 on the same plane. The vibration generating unit 1 that vibrates the first vibrating body 12 in the X-axis direction by the vibrating body 14 and the electrostatic force generated between the conductive units 17 and 18.
FIG. 1 shows a configuration in which the displacement amount detecting unit 21 and the displacement amount detecting unit 21 that detects the Coriolis force proportional to the angular velocity of rotation by each diffusion resistor 22 as a change in stress of the second support beam 15 are integrally formed. As described above, the vibration direction (X
(Axial direction) and a rotational axis (Z-axis direction) perpendicular to the vibration direction (Y-axis direction) of the second vibrating body 14 can reliably detect the angular velocity of the rotational force T applied to the center of rotation.
The following effects are obtained.

First, the first vibrating body 12 and the second vibrating body 14 are parallel to the upper substrate 11C of the substrate 11,
Since the vibrators are configured to vibrate in parallel on the same plane, as described in the related art, the viscous resistance force received from the air around each of the vibrators 12 and 14 can be significantly reduced. By increasing the amplitude (displacement amount) of 14, the detection sensitivity of angular velocity can be greatly improved.

Second, since each of the vibrators 12 and 14 has a two-dimensional structure that vibrates in parallel to the substrate 11, the cantilever 2 is perpendicular to the substrate 1 as described in the prior art. Unlike a three-dimensional configuration that vibrates, the entire structure of the sensor can be simplified and formed compact.

Third, the substrate 11 made of a silicon material
In addition, since the respective vibrators 12, 14 and the respective support beams 13, 15 are integrally formed by using a semiconductor fine processing technique such as etching, a plurality of angular velocity sensors can be easily manufactured from a silicon wafer of the same material. It is possible to mass-produce an angular velocity sensor having uniform characteristics effectively,
The cost can be significantly reduced.

Fourth, since the excitation frequency of each of the vibration generators 16 is made to substantially match the resonance frequency of the second vibrating body 14, the second vibrating body 14 is subjected to Coriolis force. Can be increased, and the detection sensitivity of the angular velocity can be greatly improved.

Fifth, since the displacement detector 21 including a pair of diffusion resistors 22 and the like is provided on the base end side of each second support beam 15, the Y-axis of the second vibrating body 14 is provided. In addition to the amount of displacement in the direction, vibration, kinking, and the like in the Z-axis direction and the like can also be effectively detected, and the accuracy of detection of angular velocity can be increased to greatly improve reliability.

Sixth, each of the vibrators 12 and 14 is connected to each support beam 1.
Since it is configured to be supported at four points by 3 and 15, the mechanical strength is increased, and the reliability against impact and the like can be greatly improved.

Seventh, by adjusting the shape of each of the support beams 13 and 15, that is, the length dimensions L1 and L2, the width dimensions W1 and W2, and the thickness dimension t, the detection range of angular velocity, required accuracy, and the like are adjusted. The elastic modulus according to various conditions can be easily obtained, and it can respond to market requirements immediately.

Next, FIG. 13 shows a second embodiment of the present invention. The feature of this embodiment is that the displacement of the second vibrating body 14 is based on the capacitance change between the vibrating bodies 12 and 14. That is, the amount is detected. In this embodiment, the same components as those in the above-described first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

In the drawing, reference numeral 31 denotes a displacement detecting section as displacement detecting means provided between the first vibrating body 12 and the second vibrating body 14 along the Y-axis direction. Detector 3
1 includes a fixed-side electrode 31A formed inside the first vibrating body 12, and a movable-side electrode 31B formed on the second vibrating body 14 in opposition to the fixed-side electrode 31A. Each of the electrodes 31A and 31B is connected to a signal processing circuit (not shown) via printed wirings 32 and 33. Then, the displacement amount detecting section 31 detects a change in capacitance between the electrodes 31A and 31B, and thereby the second vibrating body 14
Is detected in the Y-axis direction.

In this embodiment having such a configuration, substantially the same operation and effect as those of the first embodiment can be obtained.

FIG. 14 shows a third embodiment of the present invention. The feature of this embodiment is that the first support beam is formed in an uneven plate shape having unevenness in the horizontal direction. In this embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

In the drawings, reference numerals 41, 41,... Denote first support beams according to the present embodiment, and each of the first support beams 41 is substantially the same as the first support beam 13 described in each of the above embodiments. Although the first vibrating body 12 is supported in parallel with the substrate 11, each of the first supporting beams 41 has an angular velocity detection range and resonance of the vibrating bodies 12 and 14 by an etching technique or the like. In order to obtain a predetermined elastic modulus according to a condition such as a frequency, it is formed in an uneven plate shape having unevenness in a horizontal direction.

Thus, in the present embodiment having the above-described structure, substantially the same operation and effect as those of the above-described embodiments can be obtained. In particular, in the present embodiment, each of the first support beams 41 is moved in the horizontal direction. The elastic modulus can be easily adjusted according to the shape because the configuration is such that it is formed in an irregular plate shape having irregularities.

In each of the above embodiments, the case where the angular velocity sensor is manufactured by using a single crystal silicon material for the substrate 11 has been described as an example. However, the present invention is not limited to this, and for example, FIGS. The upper substrate 11C may be formed using a polycrystalline silicon material as in another manufacturing method shown in FIG.

That is, in the oxide film forming step shown in FIG.
For example, the oxide film 2 is formed on the upper surface side of the lower substrate 11A of the substrate 11 made of a single crystal silicon material by using a method such as a thermal oxidation method.
7 is formed.

Next, in the upper substrate forming step shown in FIG. 16, an upper substrate 11C made of a polycrystalline silicon material containing no impurities is deposited on the upper surface of the oxide film 27 by means of a CVD method or the like to a predetermined thickness. It is formed integrally with a length t.

In the element and vibrator forming step shown in FIG. 17, means such as an impurity introduction technique and a photolithography technique are provided on the upper surface side of the upper substrate 11C made of the polycrystalline silicon film formed in the upper substrate forming step. The vibration generator 16, the displacement detector 21, and the printed wirings 19 and 2 are used.
After forming 0, 24, 25, 26 (not shown) and the like, the upper substrate 11C is etched to form the vibrators 12, 14 and the support beams 13, 15.

Finally, in a supporting frame forming step shown in FIG. 18, an etching solution is injected between the lower substrate 11A and the upper substrate 11C, and the oxide film 27 is removed by a so-called sacrificial layer etching technique while leaving the peripheral portion. Then, the support frame 11B is formed.

In this way, the angular velocity sensor shown in FIG. 1 can be formed. In particular, according to the other manufacturing method, the upper substrate 11C made of a polycrystalline silicon material is directly formed by the CVD method. The thickness t can be reduced to, for example, about several μm, and the production efficiency can be greatly improved.

Further, in each of the above embodiments, the case where the excitation frequency of each vibration generating section 16 is substantially equal to the resonance frequency of the second vibrating body 14 has been described as an example. The present invention is not limited to this, and a configuration may be adopted in which the resonance frequency of each of the vibrating bodies 12 and 14 and the excitation frequency of each of the vibration generating sections 16 substantially match. In this case, each vibration generator 1
6, the first vibrating body 12 can be vibrated with a small amount of energy, so that the voltage value of the frequency signal applied to each vibration generating unit 16 can be reduced, and the energy efficiency can be greatly improved. .

In each of the above embodiments, the vibration generating section 16 as the vibration generating means is constituted by the movable-side conductive section 17 and the fixed-side conductive section 18, and an electrostatic force generated between the conductive sections 17, 18. Although the first vibrator 12 and the second vibrator 14 are vibrated in the X-axis direction,
The present invention is not limited to this. For example, a conductive portion as a heater is formed in a part of the first support beam 13, and heat is generated by intermittently applying a current to the conductive portion, and the thermal expansion due to the generated heat is reduced. Each of the vibrators 12 and 14 may be configured to vibrate in the X-axis direction parallel to the substrate 11 by using the vibration members, or another vibration generating means may be used.

Further, in each of the above-described embodiments, the case where four support beams 13 (41) and four support beams 15 are provided has been described by way of example.
A configuration in which one to three, or five or more second support beams are provided may be employed.

Further, in the first and third embodiments, the case where the displacement amount detecting section 21 is provided on the base end side of each of the second support beams 15 has been described as an example. , 4
The displacement amount detection unit 21 may be provided only in any one to three of the second support beams 15.

Further, in the first and third embodiments, the case where the diffused resistor 22 is used as the piezoresistive element has been described as an example. Alternatively, for example, the piezoresistive effect of a field effect transistor may be reduced. May be used.

On the other hand, in the second embodiment, the case where only one displacement amount detecting section 31 is provided along the Y-axis direction has been described as an example. Alternatively, for example, a plurality of displacement amount detecting sections 31 may be provided in the Y-axis direction. May be provided, or the displacement amount detecting section 31 may be provided also in the X-axis direction.

Further, in the third embodiment, the first support beam 41 is described as being formed in the shape of an uneven plate having unevenness in the horizontal direction. However, the present invention is not limited to this. Alternatively, the second support beam 15 may be formed in another shape such as an uneven plate shape or a sawtooth shape.

Further, in each of the above embodiments, the case where the sensor is used as an independent single angular velocity sensor has been described as an example. However, the present invention is not limited to this, and may be used as a part of another substrate mounted on a vehicle, for example. It can also be formed.

[0065]

As described in detail above, according to the present invention, the substrate and the first vibration supported on the substrate via the first supporting beam and capable of vibrating in the direction parallel to the substrate are provided. A body, and supported in parallel by the first vibrating body via a second support beam;
A second vibrator provided so as to be able to vibrate in a direction orthogonal to a vibration direction of the first vibrator, a vibration generating means for vibrating the first vibrator in a direction parallel to the substrate, And a displacement amount detecting means for detecting a displacement amount of the second vibrating body. Therefore, in a state where the first vibrating body is vibrating in a direction parallel to the substrate by the vibration generating means, the entire sensor is operated. When rotated about a rotation axis perpendicular to the substrate, the second
The vibrating body vibrates in a direction orthogonal to the vibration direction of the first vibrating body by Coriolis force corresponding to the rotational force. Then, the displacement amount detecting means can detect the displacement amount of the second vibrating body during vibration, and output this as the angular velocity signal of the rotational force.

As a result, it is possible to reduce the viscous resistance force received from the surrounding air when each of the vibrators vibrates, and to increase the displacement of each of the vibrators to improve the angular velocity detection sensitivity and detection accuracy. Can be. In addition, since each vibrator has a two-dimensional configuration that vibrates in parallel with the substrate, the entire structure of the sensor can be simplified and formed compact.

[Brief description of the drawings]

FIG. 1 is a partially broken perspective view showing an angular velocity sensor according to a first embodiment of the present invention.

FIG. 2 is a plan view of the angular velocity sensor in FIG. 1 as viewed from above.

FIG. 3 is a sectional view taken in the direction of arrows III-III in FIG. 2;

FIG. 4 is an enlarged plan view showing a main part in FIG. 2;

FIG. 5 is a sectional view taken in the direction of arrows VV in FIG. 2;

FIG. 6 is a sectional view showing an oxide film forming step according to the first embodiment.

FIG. 7 is a sectional view showing a support frame forming step according to the first embodiment.

FIG. 8 is a sectional view showing a bonding step according to the first embodiment.

FIG. 9 is a sectional view showing an upper substrate forming step according to the first embodiment.

FIG. 10 is a cross-sectional view showing a device forming step according to the first embodiment.

FIG. 11 is a sectional view similar to FIG. 5, illustrating a vibrating body forming step according to the first embodiment.

FIG. 12 is a schematic diagram showing a mechanical configuration of the angular velocity sensor according to the first embodiment.

FIG. 13 is a plan view similar to FIG. 2, showing an angular velocity sensor according to a second embodiment of the present invention.

FIG. 14 is a plan view similar to FIG. 2, showing an angular velocity sensor according to a third embodiment of the present invention.

FIG. 15 is a cross-sectional view showing an oxide film forming step according to another manufacturing method of the present invention.

FIG. 16 is a cross-sectional view showing an upper substrate forming step by another manufacturing method.

FIG. 17 is a cross-sectional view showing a step of forming an element and a vibrating body by another manufacturing method.

FIG. 18 is a sectional view showing a support frame forming step by another manufacturing method.

FIG. 19 is a partially broken perspective view showing a conventional angular velocity sensor.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Substrate 12 1st vibrating body 13, 41 1st support beam 14 2nd vibrating body 15 2nd support beam 16 Vibration generation part (vibration generation means) 21, 31 Displacement amount detection part (displacement amount detection means)

Claims (1)

(57) [Claims] 1. A substrate, a first vibrator supported on the substrate via a first support beam, and provided so as to be capable of vibrating in a direction parallel to the substrate, and a second vibrator provided on the first vibrator. A second vibrating body supported in parallel via a supporting beam of the first vibrating body and capable of vibrating in a direction orthogonal to the vibration direction of the first vibrating body; An angular velocity sensor comprising: a vibration generating means for vibrating in a parallel direction with the actuator; and a displacement detecting means for detecting a displacement of the second vibrating body.