JP2874629B2 - Magnetoresistive head - Google Patents
Magnetoresistive headInfo
- Publication number
- JP2874629B2 JP2874629B2 JP1511096A JP1511096A JP2874629B2 JP 2874629 B2 JP2874629 B2 JP 2874629B2 JP 1511096 A JP1511096 A JP 1511096A JP 1511096 A JP1511096 A JP 1511096A JP 2874629 B2 JP2874629 B2 JP 2874629B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- antiferromagnetic
- electrode
- soft magnetic
- magnetoresistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Magnetic Heads (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は磁気抵抗効果ヘッド
に係り、特に磁気記録媒体に書き込まれた磁気的情報
を、磁気抵抗効果を利用して読み出しを行う磁気抵抗効
果素子を備えた磁気抵抗効果ヘッドに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive head, and more particularly to a magnetoresistive head having a magnetoresistive element for reading magnetic information written on a magnetic recording medium by utilizing the magnetoresistive effect. About the head.
【０００２】[0002]
【従来の技術】磁気ディスク装置の高密度化に伴い、狭
トラック幅、高線密度での記録再生に対応できる磁気ヘ
ッドとして、再生感度の高い磁気抵抗効果（ＭＲ）ヘッ
ドが実用化され始めている。ＭＲヘッドは、信号磁界に
対して線形応答出力に近付けるために、ＭＲ素子膜の高
さ方向の横バイアス磁界と、バルクハウゼンノイズを減
らすために、ＭＲ素子膜のトラック幅方向の縦バイアス
が必要であることが知られている（特開平３−１２５３
１１号公報）。2. Description of the Related Art With the increase in the density of magnetic disk devices, magnetoresistive (MR) heads having high reproduction sensitivity have begun to be put into practical use as magnetic heads capable of recording and reproducing with a narrow track width and a high linear density. . The MR head requires a lateral bias magnetic field in the height direction of the MR element film to approach a linear response output to the signal magnetic field, and a longitudinal bias in the track width direction of the MR element film to reduce Barkhausen noise. (Japanese Unexamined Patent Publication No. Hei 3-1253)
No. 11).
【０００３】図４はこの従来のＭＲヘッドの一例の構造
断面図を示す。同図において、この従来のＭＲヘッド
は、ＭＲ素子膜２９上に中間膜２８を介して軟磁性膜
（ＳＡＬ膜）２７が設けられており、ＳＡＬバイアスに
より横バイアスされる。また、この従来のＭＲヘッドで
は、縦バイアスとして、ＭＲ素子膜２９の端部領域上に
設けられた反強磁性膜３０による方法が用いられてい
る。なお、図４において、ＳＡＬ膜２７はＭＲ素子下地
絶縁膜２６上に設けられ、また、反強磁性膜３０上に電
極膜３１が設けられている。FIG. 4 is a structural sectional view of an example of the conventional MR head. In this conventional MR head, a soft magnetic film (SAL film) 27 is provided on an MR element film 29 via an intermediate film 28, and is laterally biased by an SAL bias. In this conventional MR head, a method using an antiferromagnetic film 30 provided on an end region of the MR element film 29 is used as a vertical bias. In FIG. 4, the SAL film 27 is provided on the MR element base insulating film 26, and the electrode film 31 is provided on the antiferromagnetic film 30.
【０００４】特に、後者の縦バイアスでは、反強磁性膜
３０により、隣接するＭＲ素子膜２９の両端部分におい
てトラック幅方向の縦バイアスを発生させ、これによ
り、ＭＲ素子膜２９全体の単一ドメイン化が可能とな
り、バルクハウゼンノイズが低減される。In particular, in the latter vertical bias, a vertical bias in the track width direction is generated at both end portions of the adjacent MR element film 29 by the antiferromagnetic film 30, whereby a single domain of the entire MR element film 29 is formed. And Barkhausen noise is reduced.
【０００５】[0005]
【発明が解決しようとする課題】しかるに、上記の従来
のＭＲヘッドでは、ＭＲ素子膜２９の端部領域上に設け
られた反強磁性膜３０によりＭＲ素子膜２９の単一ドメ
イン化は図られているが、横バイアス用の軟磁性膜２７
の単一ドメイン化がなされていないため、動作時におけ
るドメイン変化によりバイアス磁界に乱れを生じ、再生
出力にバルクハウゼンノイズが入り、再生特性が低下す
ることがある。However, in the above-mentioned conventional MR head, the MR element film 29 is made into a single domain by the antiferromagnetic film 30 provided on the end region of the MR element film 29. However, the soft magnetic film 27 for the lateral bias is used.
However, since the bias magnetic field is disturbed due to a domain change during operation, Barkhausen noise may enter the reproduction output, and the reproduction characteristics may deteriorate.
【０００６】本発明は上記の点に鑑みなされたもので、
ＭＲ素子だけでなく横バイアス用の軟磁性膜に対しても
単一ドメイン化を図ることにより、バルクハウゼンノイ
ズ等が軽減された再生特性の改善されたＭＲヘッドを提
供することを目的とする。[0006] The present invention has been made in view of the above points,
It is an object of the present invention to provide an MR head with improved reproduction characteristics in which Barkhausen noise and the like are reduced by forming a single domain not only for an MR element but also for a soft magnetic film for lateral bias.
【０００７】[0007]
【課題を解決するための手段】本発明は上記の目的を達
成するため、所定の長さと幅を有する中心能動領域と、
その両側に隣接して形成された受動領域とからなり、こ
の中心能動領域が少なくとも横バイアス膜、中間層非磁
性膜、磁気抵抗効果素子膜の三層が磁気抵抗効果素子下
地絶縁膜上に連続的に形成された磁気抵抗効果ヘッドに
おいて、磁気抵抗効果素子膜と中間層非磁性膜は中心能
動領域のみに形成され、横バイアス膜は中心能動領域及
び受動領域にわたって形成され、受動領域の横バイアス
膜上に、第一の反強磁性膜、軟磁性膜、第二の反強磁性
膜、電極下地膜、電極膜の順の積層構造を形成したこと
を特徴とする。SUMMARY OF THE INVENTION The present invention achieves the above objects by providing a central active area having a predetermined length and width;
The central active region has at least three layers of a lateral bias film, an intermediate non-magnetic film, and a magnetoresistive element film formed continuously on the magnetoresistive element base insulating film. In a magnetoresistive head formed in a typical manner, the magnetoresistive element film and the intermediate non-magnetic film are formed only in the central active region, the lateral bias film is formed over the central active region and the passive region, and the lateral bias in the passive region is formed. on the membrane, the first antiferromagnetic film, a soft magnetic film, the second antiferromagnetic film, the electrode base film, characterized in that the formation of the order of the laminated structure of the electrode film.
【０００８】本発明では、第一の反強磁性膜が横バイア
ス膜及び軟磁性膜の両方にそれぞれ交換結合しており、
横バイアス膜が交換結合を介して一方向に着磁されて単
一ドメイン化が達成され、また、第一の反強磁性膜は軟
磁性膜とも交換結合すると共に、第二反強磁性膜と軟磁
性膜で交換結合しているため、磁気抵抗効果素子に対し
て縦方向のバイアス磁界を生じさせることができる。In the present invention, the first antiferromagnetic film is exchange-coupled to both the lateral bias film and the soft magnetic film.
The lateral bias film is magnetized in one direction via exchange coupling to achieve a single domain, and the first antiferromagnetic film is exchange-coupled with the soft magnetic film, and is also connected with the second antiferromagnetic film. Since the exchange coupling is performed by the soft magnetic film, a longitudinal bias magnetic field can be generated in the magnetoresistive element.
【０００９】また、本発明では、第一の反強磁性膜、軟
磁性膜、第二の反強磁性膜、電極下地膜、電極膜は、そ
れぞれ外形が横バイアス膜と同一となるようにパターニ
ングされて形成されたことを特徴とする。これにより、
本発明では、横バイアス膜の外形を第一の反強磁性膜、
軟磁性膜、第二の反強磁性膜、電極下地膜、電極膜と異
ならせるためのパターニング工程を不要にできる。Further, according to the present invention, the first antiferromagnetic film, the soft magnetic film, the second antiferromagnetic film, the electrode underlayer, and the electrode film are each patterned so as to have the same outer shape as the lateral bias film. It is characterized by being formed. This allows
In the present invention, the outer shape of the lateral bias film is a first antiferromagnetic film,
A patterning step for making the soft magnetic film, the second antiferromagnetic film, the electrode base film, and the electrode film different can be eliminated.
【００１０】[0010]
【発明の実施の形態】次に、本発明の実施の形態につい
て図面と共に説明する。図１及び図２はそれぞれ本発明
になるＭＲヘッドの第１の実施の形態の平面図及び図１
のＡ−Ａ’線に沿う概略断面図である。通常は、ＭＲ素
子部は所定の絶縁層を介して、一対のシールドの間に配
設され、更に磁気記録媒体への記録を行うインダクティ
ブヘッドと組み合わせた複合ヘッドとして構成される
が、ここでは、本発明の特徴となるところを明確にする
ために、シールド及びインダクティブヘッドは省略し、
ＭＲ素子部のみ図１及び図２に示してある。Next, embodiments of the present invention will be described with reference to the drawings. 1 and 2 are a plan view and a plan view, respectively, of a first embodiment of an MR head according to the present invention.
3 is a schematic sectional view taken along line AA ′ of FIG. Usually, the MR element section is disposed between a pair of shields via a predetermined insulating layer, and is further configured as a combined head combined with an inductive head for performing recording on a magnetic recording medium. To clarify the features of the present invention, the shield and the inductive head are omitted,
Only the MR element is shown in FIGS.
【００１１】図１に示すように、ＭＲ素子部１は、磁気
記録媒体に書き込まれた磁気的情報の感磁部に相当する
中心能動領域２と、その両側に隣接して形成された受動
領域３とからなる。この中心能動領域２は、図２に示す
ように、ＭＲ素子下地絶縁膜４上に軟磁性膜からなる横
バイアス膜５、中間層非磁性膜６、ＭＲ素子膜７及び非
磁性膜８の四層が連続的に積層され、ＭＲ素子膜７と中
間層非磁性膜６は中心能動領域２のみに形成され、横バ
イアス膜５は中心能動領域２及び受動領域３にわたって
形成されている。As shown in FIG. 1, an MR element 1 has a central active area 2 corresponding to a magnetically sensitive part of magnetic information written on a magnetic recording medium, and passive areas formed adjacent to both sides thereof. 3 As shown in FIG. 2, the central active region 2 has a lateral bias film 5 made of a soft magnetic film, an intermediate non-magnetic film 6, an MR element film 7, and a non-magnetic film 8 on the MR element base insulating film 4. The layers are continuously laminated, the MR element film 7 and the intermediate non-magnetic film 6 are formed only in the central active region 2, and the lateral bias film 5 is formed over the central active region 2 and the passive region 3.
【００１２】この構成は、ＭＲ素子下地絶縁膜４上に横
バイアス膜５、中間層非磁性膜６、ＭＲ素子膜７、非磁
性膜８の四層を、連続的にスパッタした後、図１の破線
３２に示す横バイアス膜の輪郭に沿った形にパターニン
グする。続いて、中心能動領域相当部に、レジストステ
ンシルを形成し、受動領域部を横バイアス膜５を残して
ミリングし、リフトオフすることにより得られる。In this structure, four layers of a lateral bias film 5, an intermediate non-magnetic film 6, an MR element film 7, and a non-magnetic film 8 are successively sputtered on the MR element base insulating film 4, and then, as shown in FIG. Is patterned along the outline of the lateral bias film shown by the broken line 32 in FIG. Subsequently, a resist stencil is formed in a portion corresponding to the central active region, and the passive region is milled while leaving the lateral bias film 5 and lifted off.
【００１３】このようにして形成された受動領域３の横
バイアス膜５上に、第一の反強磁性膜９、軟磁性膜１
０、第二の反強磁性膜１１、電極下地膜１２及び電極膜
１３が順に形成される。The first antiferromagnetic film 9 and the soft magnetic film 1 are formed on the lateral bias film 5 in the passive region 3 thus formed.
0, a second antiferromagnetic film 11, an electrode base film 12, and an electrode film 13 are sequentially formed.
【００１４】 この実施の形態の第一の特徴は、第一の
反強磁性膜９が、両側の受動領域３において横バイアス
膜５及び軟磁性膜１０の両方に隣接して設けられ、互い
に交換結合していることである。第一の反強磁性膜９
は、主として、その下に形成された受動領域３の横バイ
アス膜５と交換結合し、この交換結合を介して横バイア
ス膜５は一方向（トラック幅方向：＋ｘ若しくは−ｘ方
向）に着磁され、単一ドメイン化が達成されることであ
る。また、第一の反強磁性膜９は、その上に形成された
軟磁性膜１０とも交換結合し、これの一方向磁化を、よ
り確かなものとする。ここで、横バイアス膜の着磁の大
きさは、反強磁性膜の材料、膜厚、熱処理条件等の選定
により、所望の値に設定することができる。 A first feature of this embodiment is that a first antiferromagnetic film 9 is provided adjacent to both the lateral bias film 5 and the soft magnetic film 10 in the passive regions 3 on both sides, and exchanges with each other. That they are united. First antiferromagnetic film 9
Is mainly exchange-coupled with the lateral bias film 5 of the passive region 3 formed thereunder, and the lateral bias film 5 is magnetized in one direction (track width direction: + x or -x direction) through this exchange coupling. And a single domain is achieved. Further, the first antiferromagnetic film 9 is exchange-coupled with the soft magnetic film 10 formed thereon, thereby making the one-way magnetization more reliable. Here, the magnitude of magnetization of the lateral bias film is large.
The size is selected by selecting the material, film thickness, heat treatment conditions, etc. of the antiferromagnetic film.
Can be set to a desired value.
【００１５】 第二の特徴は、軟磁性膜１０の上に第二
の反強磁性膜１１が隣接して設けられ、互いに交換結合
していることである。軟磁性膜１０は、反強磁性膜９と
の交換結合により一方向に磁化し、この磁化からの磁界
が、ＭＲ素子膜７に対して縦方向（トラック幅方向）の
バイアス磁界を生じる。つまり、この軟磁性膜１０は疑
似的な永久磁石として作用し、ＭＲ素子膜７にトラック
幅方向の縦バイアス磁界を発生させることにより、ＭＲ
素子膜７の単一ドメイン化が図られる。ここで、縦バイ
アス磁界の大きさは、軟磁性膜の材料、膜厚の選定によ
り、所望の値に設定することができる。なお、ＭＲ素子
膜７に対する横バイアスは、従来と同様のＳＡＬバイア
スにより発生される。A second feature is that a second antiferromagnetic film 11 is provided adjacent to the soft magnetic film 10 and exchange-coupled with each other. The soft magnetic film 10 is magnetized in one direction by exchange coupling with the antiferromagnetic film 9, and a magnetic field from this magnetization generates a bias magnetic field in the longitudinal direction (track width direction) with respect to the MR element film 7. In other words, the soft magnetic film 10 acts as a pseudo permanent magnet, and generates a longitudinal bias magnetic field in the track width direction in the MR element film 7 to make the MR element film 7
A single domain of the element film 7 is achieved. Where the vertical bike
The magnitude of the as-magnetic field depends on the material and thickness of the soft magnetic film.
Can be set to a desired value. Note that the lateral bias for the MR element film 7 is generated by the same SAL bias as in the related art.
【００１６】図３は本発明になるＭＲヘッドの第２の実
施の形態の概略断面図を示す。このＭＲヘッドのＭＲ素
子部１４は、ＭＲ素子下地絶縁膜１５上に横バイアス膜
１６、中間層非磁性膜１７、ＭＲ素子膜１８、非磁性膜
１９の四層を連続的にスパッタした後、中心能動領域相
当部に、レジストステンシルを形成し、受動領域部を横
バイアス膜１６を残してミリングし、リフトオフするこ
とにより得られる。FIG. 3 is a schematic sectional view of a second embodiment of the MR head according to the present invention. The MR element portion 14 of the MR head is formed by successively sputtering four layers of a lateral bias film 16, an intermediate nonmagnetic film 17, an MR element film 18, and a nonmagnetic film 19 on an MR element base insulating film 15, A resist stencil is formed in a portion corresponding to the central active region, and the passive region is milled while leaving the lateral bias film 16 and lifted off.
【００１７】このようにして形成された受動領域の横バ
イアス膜１６上に、第一の反強磁性膜２０、軟磁性膜２
１、第二の反強磁性膜２２、電極下地膜２３及び電極膜
２４が順に形成される。第１の実施の形態は横バイアス
膜５が図１に破線３２に示すように、ウィング状に形成
されているが、この第２の実施の形態では、横バイアス
膜１６は第一の反強磁性膜２０、軟磁性膜２１、第二の
反強磁性膜２２、電極下地膜２３及び電極膜２４の外形
がそれぞれ同じになるようにパターニングされているた
め、ウィング状のパターニングが不要な分、プロセスが
簡略化されている。A first antiferromagnetic film 20 and a soft magnetic film 2
First, a second antiferromagnetic film 22, an electrode base film 23, and an electrode film 24 are sequentially formed. In the first embodiment, the lateral bias film 5 is formed in a wing shape as shown by a broken line 32 in FIG. 1, but in the second embodiment, the lateral bias film 16 is formed of a first anti-strength material. Since the magnetic film 20, the soft magnetic film 21, the second antiferromagnetic film 22, the electrode underlayer 23, and the electrode film 24 are patterned so as to have the same outer shape, the wing-shaped patterning is unnecessary. The process has been simplified.
【００１８】この実施の形態によれば、第１の実施の形
態と同様に、第一の反強磁性膜２０及び第二の反強磁性
膜２２により、横バイアス膜１６及びＭＲ素子膜１８双
方に縦バイアスが発生し、単一ドメイン化が実現でき
る。According to this embodiment, as in the first embodiment, both the lateral bias film 16 and the MR element film 18 are formed by the first antiferromagnetic film 20 and the second antiferromagnetic film 22. , A vertical bias is generated, and a single domain can be realized.
【００１９】[0019]
【実施例】次に、第１の実施の形態の実施例について説
明する。横バイアス膜５としては、厚さ５〜４０ｎｍの
Ｃｏ−Ｚｒ、Ｃｏ−Ｚｒ−Ｍｏ又はＮｉ−Ｆｅ−Ｒｈな
どからなる軟磁性膜が用いられ、反強磁性膜９及び１１
としては、厚さ５〜５０ｎｍのＦｅ−Ｍｎ、Ｎｉ−Ｍ
ｎ、Ｆｅ−Ｍｎ−Ｃｏ又はＮｉ−Ｍｎ−Ｃｒなどの少な
くともマンガン（Ｍｎ）を含む合金が用いられる。ま
た、中間層非磁性膜６としては、厚さ１〜５０ｎｍのＴ
ａ、Ｔｉ、Ｍｏ、Ａｌ2 Ｏ3 、Ｓｉ3 Ｎ4 、ＴｉＯ2 又
はＳｉＯ2 などの金属あるいは絶縁膜が用いられる。ま
た、非磁性膜８としては、厚さ５〜３０ｎｍのＡｌ2 Ｏ
3 、Ｔａ2 Ｏ5 、Ｓｉ3 Ｎ4 、ＴｉＯ2 、ＳｉＯ2 、Ｔ
ａ、Ｔｉ又はＭｏなどの金属あるいは絶縁膜が用いられ
る。Next, an example of the first embodiment will be described. As the lateral bias film 5, a soft magnetic film made of Co-Zr, Co-Zr-Mo, Ni-Fe-Rh or the like having a thickness of 5 to 40 nm is used.
Are Fe-Mn and Ni-M having a thickness of 5 to 50 nm.
An alloy containing at least manganese (Mn) such as n, Fe-Mn-Co or Ni-Mn-Cr is used. The intermediate non-magnetic film 6 has a thickness of 1 to 50 nm.
Metals such as a, Ti, Mo, Al 2 O 3 , Si 3 N 4 , TiO 2 or SiO 2 or insulating films are used. The nonmagnetic film 8 is made of Al 2 O having a thickness of 5 to 30 nm.
3 , Ta 2 O 5 , Si 3 N 4 , TiO 2 , SiO 2 , T
Metal such as a, Ti or Mo or an insulating film is used.
【００２０】また、ＭＲ素子膜７や受動領域の軟磁性膜
１０としては、厚さ５〜４０ｎｍのＮｉ−Ｆｅ又はＮｉ
−Ｆｅ−ＣｏなどのＮｉ合金が用いられる。電極膜１３
としは、厚さ５０〜２００ｎｍの金（Ａｕ）、タンタル
（Ｔａ）、タングステン（Ｗ）、モリブデン（Ｍｏ）な
どの金属が用いられ、更に電極下地膜１２には、Ｗ、Ｍ
ｏが電極のときには、概して不要であるが、Ａｕ電極の
ときには密着性向上の観点からＴａ、Ｍｏが用いられ、
Ｔａ製の電極のときは抵抗値低減の観点からＷやＷＴｉ
が用いられる。第２の実施の形態も第１の実施の形態と
同様の材料が用いられる。The MR element film 7 and the soft magnetic film 10 in the passive region are made of Ni—Fe or Ni having a thickness of 5 to 40 nm.
-A Ni alloy such as Fe-Co is used. Electrode film 13
For example, a metal such as gold (Au), tantalum (Ta), tungsten (W), and molybdenum (Mo) having a thickness of 50 to 200 nm is used.
When o is an electrode, it is generally unnecessary, but when it is an Au electrode, Ta or Mo is used from the viewpoint of improving adhesion.
In the case of an electrode made of Ta, from the viewpoint of reducing the resistance value, W or WTi
Is used. In the second embodiment, the same materials as those in the first embodiment are used.
【００２１】[0021]
【発明の効果】以上説明したように、本発明によれば、
第一の反強磁性膜が横バイアス膜及び軟磁性膜の両方に
それぞれ交換結合しており、横バイアス膜が交換結合を
介して一方向に着磁されて単一ドメイン化が達成され、
また、第一の反強磁性膜は軟磁性膜とも交換結合すると
共に、第二反強磁性膜と軟磁性膜で交換結合しているた
め、磁気抵抗効果素子膜と横バイアス膜の双方に縦方向
のバイアス磁界を生じさせることができるため、バルク
ハウゼンノイズの発生を低減でき、良好な特性の磁気抵
抗効果素子ヘッドを実現できる。As described above, according to the present invention,
The first antiferromagnetic film is exchange-coupled to both the lateral bias film and the soft magnetic film, and the lateral bias film is magnetized in one direction via exchange coupling to achieve single domain formation.
Further, since the first antiferromagnetic film is exchange-coupled with the soft magnetic film and exchange-coupled with the second antiferromagnetic film and the soft magnetic film, the first antiferromagnetic film is vertically connected to both the magnetoresistive element film and the lateral bias film. Since a bias magnetic field in the direction can be generated, generation of Barkhausen noise can be reduced, and a magnetoresistive element head having excellent characteristics can be realized.
【００２２】また、本発明によれば、第一の反強磁性
膜、軟磁性膜、第二の反強磁性膜、電極下地膜、電極膜
は、それぞれ外形が横バイアス膜と同一となるようにパ
ターニングされて形成されたことを特徴とする。これに
より、本発明では、横バイアス膜の外形を第一の反強磁
性膜、軟磁性膜、第二の反強磁性膜、電極下地膜、電極
膜と異ならせるためのパターニング工程を不要にでき
る。Further, according to the present invention, the first antiferromagnetic film, the soft magnetic film, the second antiferromagnetic film, the electrode base film, and the electrode film have the same outer shape as the lateral bias film. It is characterized by being formed by patterning. Accordingly, in the present invention, a patterning step for making the outer shape of the lateral bias film different from the first antiferromagnetic film, the soft magnetic film, the second antiferromagnetic film, the electrode underlayer, and the electrode film can be eliminated. .
【図１】本発明の第１の実施の形態の上面図である。FIG. 1 is a top view of a first embodiment of the present invention.
【図２】図１のＡ−Ａ’線に沿う概略断面図である。FIG. 2 is a schematic sectional view taken along the line A-A 'of FIG.
【図３】本発明の第２の実施の形態の概略断面図であ
る。FIG. 3 is a schematic sectional view of a second embodiment of the present invention.
【図４】従来の一例の概略断面図である。FIG. 4 is a schematic cross-sectional view of an example of the related art.
１、１４ 磁気抵抗効果（ＭＲ）素子部 ２ 中心能動領域 ３ 受動領域 ４、１５ ＭＲ素子下地絶縁膜 ５、１６ 横バイアス膜 ６、１７ 中間層非磁性膜 ７、１８ ＭＲ素子膜 ８、１９ 非磁性膜 ９、２０ 第一の反強磁性膜 １０、２１ 軟磁性膜 １１、２２ 第二の反強磁性膜 １２、２３ 電極下地膜 １３、２４ 電極膜 1, 14 Magnetoresistance effect (MR) element portion 2 Central active region 3 Passive region 4, 15 MR element base insulating film 5, 16 Lateral bias film 6, 17 Intermediate layer nonmagnetic film 7, 18 MR element film 8, 19 Non Magnetic film 9, 20 First antiferromagnetic film 10, 21 Soft magnetic film 11, 22 Second antiferromagnetic film 12, 23 Electrode base film 13, 24 Electrode film
Claims (3)
と、その両側に隣接して形成された受動領域とからな
り、この中心能動領域が少なくとも横バイアス膜、中間
層非磁性膜、磁気抵抗効果素子膜の三層が磁気抵抗効果
素子下地絶縁膜上に連続的に形成された磁気抵抗効果ヘ
ッドにおいて、 前記磁気抵抗効果素子膜と中間層非磁性膜は中心能動領
域のみに形成され、前記横バイアス膜は前記中心能動領
域及び受動領域にわたって形成され、前記受動領域の横
バイアス膜上に、第一の反強磁性膜、軟磁性膜、第二の
反強磁性膜、電極下地膜、電極膜の順の積層構造を形成
したことを特徴とする磁気抵抗効果ヘッド。1. A central active region having a predetermined length and width and a passive region formed adjacent to both sides thereof, wherein the central active region includes at least a lateral bias film, an intermediate nonmagnetic film, and a magnetoresistive film. In a magnetoresistive head in which three layers of effect element films are continuously formed on a magnetoresistive element base insulating film, the magnetoresistive element film and the intermediate nonmagnetic film are formed only in a central active region, A lateral bias film is formed over the central active region and the passive region, and a first antiferromagnetic film, a soft magnetic film, a second antiferromagnetic film, an electrode base film, and an electrode are formed on the lateral bias film in the passive region. A magnetoresistive head comprising a laminated structure in the order of films.
の反強磁性膜、電極下地膜、電極膜は、それぞれ外形が
同一となるようにパターニングされて形成されたことを
特徴とする請求項１記載の磁気抵抗効果ヘッド。2. The method according to claim 1, wherein the first antiferromagnetic film, the soft magnetic film, the second antiferromagnetic film, the electrode underlayer, and the electrode film are formed so as to have the same outer shape. 2. The magnetoresistive head according to claim 1, wherein:
ともマンガンを含む合金であり、前記磁気抵抗効果素子
膜と軟磁性膜はニッケル合金からなることを特徴とする
請求項１記載の磁気抵抗効果ヘッド。3. The device according to claim 1, wherein the first and second antiferromagnetic films are alloys containing at least manganese, and the magnetoresistive element film and the soft magnetic film are made of a nickel alloy. Magnetoresistive head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1511096A JP2874629B2 (en) | 1996-01-31 | 1996-01-31 | Magnetoresistive head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1511096A JP2874629B2 (en) | 1996-01-31 | 1996-01-31 | Magnetoresistive head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09212826A JPH09212826A (en) | 1997-08-15 |
| JP2874629B2 true JP2874629B2 (en) | 1999-03-24 |
Family
ID=11879702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1511096A Expired - Fee Related JP2874629B2 (en) | 1996-01-31 | 1996-01-31 | Magnetoresistive head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2874629B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6344953B1 (en) * | 2000-03-08 | 2002-02-05 | Seagate Technology, Llc | Magnetoresistive read sensor using overlaid leads with insulating current guide layer |
-
1996
- 1996-01-31 JP JP1511096A patent/JP2874629B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09212826A (en) | 1997-08-15 |
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