JP2843594B2 - Charged particle beam exposure apparatus and its exposure method - Google Patents
Charged particle beam exposure apparatus and its exposure methodInfo
- Publication number
- JP2843594B2 JP2843594B2 JP1068308A JP6830889A JP2843594B2 JP 2843594 B2 JP2843594 B2 JP 2843594B2 JP 1068308 A JP1068308 A JP 1068308A JP 6830889 A JP6830889 A JP 6830889A JP 2843594 B2 JP2843594 B2 JP 2843594B2
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- JP
- Japan
- Prior art keywords
- mask
- charged particle
- particle beam
- focusing lens
- deflector
- Prior art date
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Description
【発明の詳細な説明】 〔概要〕 荷電粒子ビーム露光装置及びその露光方法に関し、 ステンシルマスク上の繰返しパターン数の増大、露光
精度の改善及びパターンの不本意な縮小変形を回避する
ことを目的とし、 請求項１に係る荷電粒子ビーム露光装置は、荷電粒子
ビームの経路に沿って、該経路の上流側から、第１の電
磁集束レンズ、第１のマスク偏向器、第２のマスク偏向
器、ステンシルマスク、第３のマスク偏向器、第４のマ
スク偏向器及び第２の電磁集束レンズ、を順次配列して
構成された集束レンズ系を備え、且つ、前記第１の電磁
集束レンズと前記第２の電磁集束レンズを異なる電源供
給で動作する２つのレンズコイルからなるダブレットレ
ンズで構成し、前記ステンシルマスク上の回転の補正を
前記第１の電磁集束レンズで行うとともに、前記ステン
シルマスクを通過したビームと被露光試料との回転の補
正を前記第２の電磁集束レンズで行うことを特徴とす
る。DETAILED DESCRIPTION OF THE INVENTION [Summary] A charged particle beam exposure apparatus and an exposure method therefor, aiming to increase the number of repetitive patterns on a stencil mask, improve exposure accuracy, and avoid undesired shrinkage of patterns. The charged particle beam exposure apparatus according to claim 1, wherein a first electromagnetic focusing lens, a first mask deflector, a second mask deflector are provided along a path of the charged particle beam from an upstream side of the path. A stencil mask, a third mask deflector, a fourth mask deflector, and a second electromagnetic focusing lens are sequentially arranged, and the first electromagnetic focusing lens and the second electromagnetic focusing lens are provided. The second electromagnetic focusing lens is constituted by a doublet lens composed of two lens coils operated by different power supplies, and the rotation on the stencil mask is corrected by the first electromagnetic focusing lens. In addition, the rotation of the beam passing through the stencil mask and the sample to be exposed is corrected by the second electromagnetic focusing lens.
請求項２に係る荷電粒子ビーム露光方法は、請求項１
記載の荷電粒子ビーム露光装置において、第１の電磁集
束レンズと第２の電磁集束レンズを用いてそれらの間の
荷電粒子ビームを略平行ビームとすると共に、第１のマ
スク偏向器と第２のマスク偏向器を用いて荷電粒子ビー
ムを略垂直にステンシルマスク上に照射し、さらに第３
のマスク偏向器と第４のマスク偏向器を用いて荷電粒子
ビームを第２の電磁集束レンズの光軸に戻すようにした
ことを特徴とする。The charged particle beam exposure method according to the second aspect is the first aspect.
In the charged particle beam exposure apparatus described above, the first electromagnetic focusing lens and the second electromagnetic focusing lens are used to make the charged particle beam therebetween substantially parallel, and the first mask deflector and the second The charged particle beam is irradiated on the stencil mask substantially vertically by using a mask deflector.
The charged particle beam is returned to the optical axis of the second electromagnetic focusing lens by using the mask deflector and the fourth mask deflector.
請求項３に係る荷電粒子ビーム露光方法は、請求項１
記載の荷電粒子ビーム露光装置において、第２、第３及
び第４のマスク偏向器を第１のマスク偏向器に対して同
期して偏向させ、それらの向きは、第１と第２のマスク
偏向器では逆方向、第２と第３のマスク偏向器では同方
向、及び第３と第４のマスク偏向器では逆方向とし、さ
らに第２、第３及び第４のマスク偏向器の偏向量は第１
のマスク偏向器の偏向量に対して各々一定の関係で一義
的に定まる量とすることを特徴とする。A charged particle beam exposure method according to a third aspect is the first aspect.
In the charged particle beam exposure apparatus described above, the second, third and fourth mask deflectors are deflected synchronously with respect to the first mask deflector, and their directions are the first and second mask deflectors. The directions are opposite in the device, the same direction in the second and third mask deflectors, and the opposite direction in the third and fourth mask deflectors, and the deflection amounts of the second, third, and fourth mask deflectors are First
The amount of deflection of the mask deflector is uniquely determined in a fixed relationship.
本発明は、荷電粒子ビーム露光装置及びその露光方法
に関し、特に、ステンシルマスクを備えた荷電粒子ビー
ム露光装置及びその露光方法に関する。The present invention relates to a charged particle beam exposure apparatus and an exposure method thereof, and more particularly, to a charged particle beam exposure apparatus having a stencil mask and an exposure method thereof.
一段と回路パターンを微細化した半導体集積回路装置
の製造装置として、近年、荷電粒子ビーム（電子、イオ
ンあるいはＸ線）を使用する露光装置が注目されてい
る。In recent years, an exposure apparatus using a charged particle beam (electrons, ions, or X-rays) has attracted attention as a manufacturing apparatus of a semiconductor integrated circuit device in which a circuit pattern is further miniaturized.
荷電粒子ビーム露光装置の最も基本的なものは、荷電
粒子ビーム（以下、単にビームという）の経路上に備え
られた可変短形アパーチャによってビームの断面形状を
可変操作し、この成形ビームを偏向してウェハ上にパタ
ーンを描画するものであるが、このものは、描画が一筆
書きであることからスループットの面で不充分であっ
た。そこで、改良型として、可変矩形アパーチャに相当
する可変短形透過孔及び複数の繰返しパターン透過孔を
形成したいわゆるステンシルマスクを備え、例えば、メ
モリセルのように同一の繰返しパターン部分の露光で
は、該当する繰返しパターン透過孔によってビームを形
成してショット露光を行うことにより、全体のスループ
ットを向上したものが知られている。The most basic type of a charged particle beam exposure apparatus variably operates a beam cross-sectional shape by a variable short aperture provided on a path of a charged particle beam (hereinafter, simply referred to as a beam), and deflects the shaped beam. In this method, a pattern is drawn on a wafer, but this method is insufficient in terms of throughput because drawing is performed by one stroke. Therefore, as an improved type, a so-called stencil mask having a variable rectangular transmission hole corresponding to a variable rectangular aperture and a plurality of repeating pattern transmission holes is provided. It is known that shot exposure is performed by forming a beam with a repetitive pattern transmission hole to improve the overall throughput.
第３図は、ステンシルマスクを備てた荷電粒子ビーム
露光装置の従来例を示すその要部構成図で、１は静電偏
向器、２は集束電磁レンズ、３はステンシルマスクであ
る。集束電磁レンズ２は、光軸４（ビーム軸を便宜的に
光軸と呼称する）に球心を一致させた図示しない一対の
凸電磁レンズよりなり、一方のレンズで入射側球面2a
を、そして、他方のレンズで出射側球面2bを形成してい
る。また、ステンシルマスク３は光軸４に一致して開口
された可変矩形透過孔3aと、複数の繰返しパターン透過
孔（但し、代表して１つを示す）3bとを備えて形成され
ている。FIG. 3 is a configuration diagram of a main part of a conventional example of a charged particle beam exposure apparatus provided with a stencil mask, wherein 1 is an electrostatic deflector, 2 is a focusing electromagnetic lens, and 3 is a stencil mask. The focusing electromagnetic lens 2 is composed of a pair of convex electromagnetic lenses (not shown) whose spheres coincide with the optical axis 4 (the beam axis is referred to as the optical axis for convenience).
And the other lens forms the emission-side spherical surface 2b. Further, the stencil mask 3 is formed to include a variable rectangular transmission hole 3a opened to coincide with the optical axis 4 and a plurality of repeating pattern transmission holes (however, one is shown) 3b.
このような構成において、入射側球面2aへのビーム入
射位置は、静電偏向器１による偏向量によって決まる。
例えば、可変短形透過孔3aを選択する場合であれば、ビ
ームは球面2aの位置（Ａ）に入射し、あるいは、パター
ン透過孔3bを選択する場合であれば、ビームは所定の角
度で偏向される結果、球面2aの位置（Ｂ）に入射するこ
ととなる。すなわち、静電偏向器１の偏向操作に応じて
ビームの球面2aへの入射位置が変化し、ステンシルマス
ク３の任意の透過孔を通過して出射側球面2bから出射
し、再び光軸４に戻るといったビーム経路をとり、結
局、ウェハ上に透過孔形状に応じたパターンを露光でき
るのである。In such a configuration, the beam incident position on the incident side spherical surface 2a is determined by the amount of deflection by the electrostatic deflector 1.
For example, when selecting the variable short hole 3a, the beam enters the position (A) of the spherical surface 2a, or when selecting the pattern transmission hole 3b, the beam is deflected at a predetermined angle. As a result, the light enters the position (B) of the spherical surface 2a. That is, the incident position of the beam on the spherical surface 2a changes in accordance with the deflection operation of the electrostatic deflector 1, passes through an arbitrary transmission hole of the stencil mask 3, exits from the exit side spherical surface 2b, and returns to the optical axis 4. By taking a beam path such as returning, a pattern corresponding to the shape of the transmission hole can be finally exposed on the wafer.
しかしながら、このような従来の荷電粒子がビーム露
光装置にあっては、静電偏向器１によってビームの入射
側球面2aへの入射位置を変化させ、ステンシルマスク３
上の透過孔を選択する構成となっていたため、 ｉ）静電偏向器１は、静電型であるから電磁型に比して
偏向角が小さく、したがって、ステンシルマスク３の表
面上のビーム走査範囲が狭くステンシルマスク３に形成
する透過孔の数を多くできない。このことは、集積回路
装置の繰返しパターンが一般的に多種類であることを考
えると、ステンシルマスクを備えた荷電粒子ビーム露光
装置を実用化するうえでの大きな障害となる。However, in such a conventional charged particle beam exposure apparatus, the position of incidence of the beam on the incident side spherical surface 2a is changed by the electrostatic deflector 1, and the stencil mask 3
Since the upper transmission hole is selected, i) since the electrostatic deflector 1 is of the electrostatic type, the deflection angle is smaller than that of the electromagnetic type, and therefore, the beam scanning on the surface of the stencil mask 3 The range is narrow and the number of transmission holes formed in the stencil mask 3 cannot be increased. This poses a serious obstacle in putting a charged particle beam exposure apparatus having a stencil mask into practical use, considering that there are generally many types of repetitive patterns in an integrated circuit device.
ii）また、ビームの入射側球面2aへの入射位置が変わる
ことにより、いわゆる球面収差が発生して露光精度を悪
化させるといった問題点や、 iii）さらに、相当に大きな偏向角を与えると、出射側
球面2bから出射したビームの集束点（Ｃ）におけるパタ
ーン部分の見込角が小さくなり、その結果、パターンが
不本意に縮小変形してしまうといった問題点がある。ii) In addition, there is a problem that the so-called spherical aberration is generated due to a change in the incident position of the beam on the incident side spherical surface 2a, thereby deteriorating the exposure accuracy. There is a problem that the apparent angle of the pattern portion at the convergence point (C) of the beam emitted from the side spherical surface 2b becomes small, and as a result, the pattern is undesirably reduced and deformed.
本発明は、このような問題点に鑑みてなされたもの
で、集束電磁レンズへのビームの入射位置及び出射位置
を常に光軸に一致させた状態で、ステンシルマスク上を
自在に偏向できるようにし、もって、ステンシルマスク
上の繰返しパターン数の増大、露光精度の改善及びパタ
ーンの不本意な縮小変形を回避することを目的としてい
る。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has been made in such a manner that the incident position and the outgoing position of a beam to a focusing electromagnetic lens can be freely deflected on a stencil mask in a state where they are always aligned with the optical axis. It is therefore an object of the present invention to increase the number of repetitive patterns on a stencil mask, improve exposure accuracy, and avoid undesired reduced deformation of patterns.
請求項１に係る荷電粒子ビーム露光装置は、荷電粒子
ビームの経路に沿って、該経路の上流側から、第１の電
磁集束レンズ、第１のマスク偏向器、第２のマスク偏向
器、ステンシルマスク、第３のマスク偏向器、第４のマ
スク偏向器及び第２の電磁集束レンズ、を順次配列して
構成された集束レンズ系を備え、且つ、前記第１の電磁
集束レンズと前記第２の電磁集束レンズを異なる電源供
給で動作する２つのレンズコイルからなるダブレットレ
ンズで構成し、前記ステンシルマスク上の回転の補正を
前記第１の電磁集束レンズで行うとともに、前記ステン
シルマスクを通過したビームと被露光試料との回転の補
正を前記第２の電磁集束レンズで行うことを特徴とす
る。The charged particle beam exposure apparatus according to claim 1, wherein a first electromagnetic focusing lens, a first mask deflector, a second mask deflector, and a stencil are arranged along a path of the charged particle beam from an upstream side of the path. A focusing lens system configured by sequentially arranging a mask, a third mask deflector, a fourth mask deflector, and a second electromagnetic focusing lens, and the first electromagnetic focusing lens and the second Is constituted by a doublet lens composed of two lens coils operated by different power supplies, the rotation of the stencil mask is corrected by the first electromagnetic focusing lens, and the beam passing through the stencil mask The rotation of the sample and the sample to be exposed is corrected by the second electromagnetic focusing lens.
請求項２に係る荷電粒子ビーム露光方法は、請求項１
記載の荷電粒子ビーム露光装置において、第１の電磁集
束レンズと第２の電磁集束レンズを用いてそれらの間の
荷電粒子ビームを略平行ビームとすると共に、第１のマ
スク偏向器と第２のマスク偏向器を用いて荷電粒子ビー
ムを略垂直にステンシルマスク上に照射し、さらに第３
のマスク偏向器と第４のマスク偏向器を用いて荷電粒子
ビームを第２の電磁集束レンズの光軸に戻すようにした
ことを特徴とする。The charged particle beam exposure method according to the second aspect is the first aspect.
In the charged particle beam exposure apparatus described above, the first electromagnetic focusing lens and the second electromagnetic focusing lens are used to make the charged particle beam therebetween substantially parallel, and the first mask deflector and the second The charged particle beam is irradiated on the stencil mask substantially vertically by using a mask deflector.
The charged particle beam is returned to the optical axis of the second electromagnetic focusing lens by using the mask deflector and the fourth mask deflector.
請求項３に係る荷電粒子ビーム露光方法は、請求項１
記載の荷電粒子ビーム露光装置において、第２、第３及
び第４のマスク偏向器を第１のマスク偏向器に対して同
期して偏向させ、それらの向きは、第１と第２のマスク
偏向器では逆方向、第２と第３のマスク偏向器では、同
方向、及び第３と第４のマスク偏向器では逆方向とし、
さらに第２、第３及び第４のマスク偏向器の偏向量は第
１のマスク偏向器の偏向量に対して各々一定の関係で一
義的に定まる量とすることを特徴とする。A charged particle beam exposure method according to a third aspect is the first aspect.
In the charged particle beam exposure apparatus described above, the second, third and fourth mask deflectors are deflected synchronously with respect to the first mask deflector, and their directions are the first and second mask deflectors. In the opposite direction, in the same direction in the second and third mask deflectors, and in the opposite direction in the third and fourth mask deflectors,
Further, the deflection amounts of the second, third, and fourth mask deflectors are each uniquely determined in a fixed relation to the deflection amount of the first mask deflector.
本発明では、第１の電磁集束レンズと第２の電磁集束
レンズが異なる電源供給で動作する２つのレンズコイル
からなるダブレットレンズで構成され、第１、第２の電
磁集束レンズの間のビーム経路が、第１〜第４のマスク
偏向器によって偏向される。したがって、第１の電磁集
束レンズに入射し、そして第２の電磁集束レンズから出
射するビームの入・出射位置は、第１、第２の電磁射レ
ンズで形成される２つの球面中心を通る光軸と一致する
ものとなり、その結果、球面収差の影響を受けないから
露光精度が改善され、またパターンの不本意な縮小変形
が避けられる。さらに、第１〜第４のマスク偏向器を電
磁型にすれば、充分に大きな偏向角が得られ、ステンシ
ルマスクの走査範囲が拡大されてそれだけ繰返しパター
ン用の透過孔が増大される。特に、第１の電磁集束レン
ズと第２の電磁集束レンズを異なる電源供給で動作する
２つのレンズコイルからなるダブレットレンズで構成
し、ステンシルマスク上の回転の補正を第１の電磁集束
レンズで行うとともに、ステンシルマスクを通過したビ
ームと被露光試料との回転の補正を第２の電磁集束レン
ズで行うという特徴的な事項を備えたため、I2すなわち
磁束強度を変えることなく、一対のコイルに流す電流Ｉ
の比率を変えるだけで、ビームの平行性を崩さずに回転
を自在にコントロールできる。According to the present invention, the first electromagnetic focusing lens and the second electromagnetic focusing lens are each configured by a doublet lens including two lens coils operated by different power supplies, and a beam path between the first and second electromagnetic focusing lenses is provided. Are deflected by the first to fourth mask deflectors. Therefore, the entrance and exit positions of the beam that enters the first electromagnetic focusing lens and exits from the second electromagnetic focusing lens are the light passing through the centers of two spherical surfaces formed by the first and second electromagnetic focusing lenses. The axis coincides with the axis. As a result, the exposure accuracy is improved because the spherical aberration is not affected, and undesired reduction of the pattern is avoided. Further, if the first to fourth mask deflectors are of the electromagnetic type, a sufficiently large deflection angle can be obtained, the scanning range of the stencil mask is enlarged, and the transmission holes for the repetitive pattern are increased accordingly. In particular, the first electromagnetic focusing lens and the second electromagnetic focusing lens are configured by a doublet lens composed of two lens coils operated by different power supplies, and the rotation on the stencil mask is corrected by the first electromagnetic focusing lens. In addition, since there is a characteristic feature that the rotation of the beam passing through the stencil mask and the sample to be exposed is corrected by the second electromagnetic focusing lens, the current flowing through the pair of coils without changing I2, that is, the magnetic flux intensity I
By simply changing the ratio, the rotation can be freely controlled without breaking the parallelism of the beam.
以下、本発明を図面に基づいて説明する。 Hereinafter, the present invention will be described with reference to the drawings.
第１、２図は本発明の係る荷電粒子ビーム露光装置及
びその露光方法の一実施例を示す図である。FIGS. 1 and 2 show a charged particle beam exposure apparatus and an exposure method according to an embodiment of the present invention.
第１図において、10は荷電粒子ビーム露光装置であ
り、荷電粒子ビーム露光装置10は、カソード電極11、グ
リッド電極12及びアノード電極13からなる荷電粒子ビー
ム発生源Ｇ、第１スリット14、第１レンズ15、スリット
デフレクタ16、集束レンズ系17、ブランキング18、第２
レンズ19、アパーチャ20、第３レンズ21、第４レンズ2
2、メインデフコイル23、サブデフレクタ24、リフォー
カスコイル25、フォーカスコイル26、スティグコイル27
及び第１〜第４アライメントコイル28〜31を備えるとと
もに、ウェハＷを載置してＸ−Ｙ方向に移動可能なステ
ージ32及び１つの透過孔を選択するための選択データに
従って偏向信号S1〜S4を発生する偏向信号発生装置33な
どを備えている。In FIG. 1, reference numeral 10 denotes a charged particle beam exposure apparatus. The charged particle beam exposure apparatus 10 includes a charged particle beam generation source G including a cathode electrode 11, a grid electrode 12, and an anode electrode 13, a first slit 14, a first slit 14, Lens 15, slit deflector 16, focusing lens system 17, blanking 18, second
Lens 19, aperture 20, third lens 21, fourth lens 2
2, main differential coil 23, sub deflector 24, refocus coil 25, focus coil 26, stig coil 27
And provided with a first through fourth alignment coils 28-31, the deflection signal S 1 ~ according to the selection data for selecting the X-Y-direction movable stage 32 and one transmission hole by mounting the wafer W and a like deflection signal generator 33 for generating S 4.
なお、上記偏向信号発生装置33は、実際には、荷電粒
子ビーム露光装置10内で必要とされる各種信号を生成す
るものであるが、ここでは説明の便宜状、集束レンズ系
17に必要な信号のみを表わしている。具体的には、第１
のマスク偏向器41（後述）の偏向量を指示する信号（本
実施例では選択データ）が入力されると、第１のマスク
偏向器41に対する偏向信号S1が出力されるとともに、こ
れと同時に、他のマスク偏向器42〜45（後述）に対する
偏向信号S2〜S4も出力されるものであって、S2〜S4はS1
に対応して決定されるものであればよい。Note that the deflection signal generator 33 actually generates various signals required in the charged particle beam exposure apparatus 10, but here, for convenience of explanation, a focusing lens system is used.
Only the signals required for 17 are shown. Specifically, the first
When a signal indicating the amount of deflection of the mask deflector 41 (described later) (selected data in this embodiment) is input, together with the deflection signals S 1 for the first mask deflector 41 is output, and at the same time , be one deflection signal S 2 to S 4 for another mask deflector 42 to 45 (described later) is also output, S 2 to S 4 are S 1
May be determined as long as it is determined in accordance with.
集束レンズ系17は、次のものを含んで構成されてい
る。すなわち、荷電粒子ビームの経路（図中、カソード
電極11からウェハＷに至る仮想線Ｌで示す）に沿って、
該経路Ｌの上流側（カソード電極11側を上流側、ウェハ
Ｗ側を下流とする）から、一方の電磁集束レンズ（第１
の電磁集束レンズ）40、第１のマスク偏向器41、第２の
マスク偏向器42、ステンシルマスク43、第３のマスク偏
向器44、第４のマスク偏向器45、他方の電磁集束レンズ
（第２の電磁集束レンズ）46を順次配列して構成されて
いる。The focusing lens system 17 includes the following. That is, along the path of the charged particle beam (indicated by a virtual line L from the cathode electrode 11 to the wafer W in the figure),
From the upstream side of the path L (the cathode electrode 11 side is the upstream side and the wafer W side is the downstream side), one electromagnetic focusing lens (first
, A first mask deflector 41, a second mask deflector 42, a stencil mask 43, a third mask deflector 44, a fourth mask deflector 45, and the other electromagnetic focusing lens (the (Two electromagnetic focusing lenses) 46 are sequentially arranged.
一対の電磁集束レンズ40、46は各々ダブレットレンズ
で構成されており、これは次の理由による。すなわち、
従来、像の回転調整は物理的なマスク（従来の露光装置
では可変短形用のスリット）の回転で調整していた。こ
の種のマスクとしては、本実施例のステンシルマスク43
が該当する。しかしステンシルマスク43の回転による補
正は現実的ではない。ダブレットレンズにしなくても第
１の電磁集束レンズで回転の補正は出来るが、その場合
強度も変わってしまって平行性が崩れてしまう。従っ
て、平行性を崩さずに回転を補正するのは、ダブレット
レンズでなければならない。つまり、この系の第１の電
磁集束レンズをダブレットレンズにする事は本質的な事
であり、この部分で使用する事はこの系を実用化させる
上で重要な役割を果たす。ダブレットレンズは、レンズ
コイルを２つの異なる電源供給で動作するコイルから作
る。つまり、1000ターン必要なレンズだったら500ター
ンずつ２組のコイルを巻く。そして、各コイルに流す電
流の向きを逆にする。元々、電磁集束コイルの強度は、
I2の比例値なので、強度はコイルに流す電流の向きに依
らない。ところが回転はＩの比例値なので、電流の向き
に依存する。つまり、コイル数と電流量の積（AT値）が
逆向きに同じ量であったとすると理想的には回転が起こ
らない。実際には回転するが、I2を変えずにＩの比率を
変える事で回転をコントロールする事が出来る様になる
のである。一方、マスク上のパターンを露光試料上に合
わせる為、第２の電磁集束レンズをダブレットにする。
もっとも第２レンズをダブレットにしなくても、第２の
電磁集束レンズ下部のレンズコイルで調整することが可
能であるが、回転調整が必要な理由（回転補正が必要と
なる理由）はマスクをマスクステージにセットしたとき
に回転が発生するからであり、マスクを交換する度に第
２の電磁集束レンズ下部のレンズコイルで調整するのは
現実的ではない。なぜならば、その度に強度の調整も必
要になるからである。Each of the pair of electromagnetic focusing lenses 40 and 46 is constituted by a doublet lens for the following reason. That is,
Conventionally, the rotation of an image has been adjusted by rotating a physical mask (a slit for a variable short shape in a conventional exposure apparatus). As this type of mask, the stencil mask 43 of this embodiment is used.
Is applicable. However, correction by rotation of the stencil mask 43 is not realistic. The rotation can be corrected by the first electromagnetic focusing lens without using the doublet lens, but in that case, the intensity also changes and the parallelism is lost. Therefore, the doublet lens must correct the rotation without losing the parallelism. In other words, it is essential that the first electromagnetic focusing lens of this system be a doublet lens, and its use in this part plays an important role in putting this system to practical use. Doublet lenses make the lens coil from coils that operate on two different power supplies. In other words, if a lens requires 1,000 turns, wind two sets of coils for 500 turns each. Then, the direction of the current flowing through each coil is reversed. Originally, the strength of the electromagnetic focusing coil was
Since proportional value of I 2, the intensity does not depend on the direction of the current flowing through the coil. However, since the rotation is a proportional value of I, it depends on the direction of the current. That is, if the product (AT value) of the number of coils and the current amount is the same amount in the opposite direction, rotation does not occur ideally. Although it actually rotates, the rotation can be controlled by changing the ratio of I without changing I 2 . On the other hand, in order to align the pattern on the mask on the exposure sample, the second electromagnetic focusing lens is made a doublet.
However, even if the second lens is not formed as a doublet, the adjustment can be performed by the lens coil below the second electromagnetic focusing lens. This is because rotation occurs when the mask is set on the stage, and it is not realistic to adjust the mask with the lens coil below the second electromagnetic focusing lens every time the mask is replaced. This is because the intensity must be adjusted each time.
第２図は集束レンズ系17の拡大図である。第１〜第４
のマスク偏向器41、42、44、45は、経路Ｌに沿って一方
の電磁集束レンズ40に入射した荷電粒子ビームを偏向
し、ステンシルマスク43上の複数の透過孔（便宜的に43
a〜43cの３つの図示する）の１つを通過させたあと、再
び経路Ｌ上に戻して他方の電磁集束レンズ46から出射さ
れるもので、このような偏向動作は、偏向信号発生装置
33からの各偏向信号S1〜S4に従って行われる。FIG. 2 is an enlarged view of the focusing lens system 17. First to fourth
The mask deflectors 41, 42, 44, and 45 deflect the charged particle beam incident on one of the electromagnetic focusing lenses 40 along the path L, and a plurality of transmission holes (for convenience, 43) on the stencil mask 43.
a to 43c), and then returns to the path L again and exits from the other electromagnetic focusing lens 46. Such a deflection operation is performed by a deflection signal generator.
33 is performed in accordance with the deflection signals S 1 to S 4 from.
ここで、例えば、S1の大きさをＡ、その極性を正とす
ると（すなわち＋Ａ）、S2及びS3は共に−Ａ、S4は＋Ａ
に設定されるようになっている。この場合、一方の電磁
集束レンズ40に入射した荷電粒子ビームは、第１の偏向
器41において＋Ａに応じた電磁力で曲げられ、そして、
第２の偏向器42において−Ａに応じた電磁力で曲げ戻さ
れる結果、経路Ｌに略平行するものとなり、仮に、大き
さＡが透過孔43cを指定するものであれば、荷電粒子ビ
ームはほぼ垂直に透過孔43cを通過する。そして、この
通過したあとの荷電粒子ビームは、第３の偏向器44にお
いて−Ａに応じた電磁力で曲げられ、さらに、第４の偏
向器45において＋Ａに応じた電磁力で曲げ戻されて、結
局、経路Ｌに沿って他方の電磁集束レンズ46から出射し
ていくこととなる。Here, for example, the magnitude of S 1 A, when its polarity is positive (i.e., + A), S 2 and S 3 are both -A, S 4 is + A
Is set to In this case, the charged particle beam incident on one electromagnetic focusing lens 40 is bent by the first deflector 41 with an electromagnetic force corresponding to + A, and
As a result of being bent back by the electromagnetic force corresponding to -A in the second deflector 42, the beam becomes substantially parallel to the path L. If the size A designates the transmission hole 43c, the charged particle beam is It passes through the transmission hole 43c almost vertically. Then, the charged particle beam after passing through the third deflector 44 is bent by an electromagnetic force corresponding to -A, and further bent by a fourth deflector 45 by an electromagnetic force corresponding to + A. Eventually, the light is emitted from the other electromagnetic focusing lens 46 along the path L.
したがって、一方の電磁集束レンズ40への入射位置
（Ｄ）及び他方の電磁集束レンズ46からの出射位置
（Ｅ）は、荷電粒子ビームの偏向動作に拘らず常に経路
Ｌに沿ったものとなり、すなわち２つの球面40a、40bの
中心に常に一致しているから、球面収差の発生が避けら
れて露光精度を改善することができる。また、見込角が
変化しなくなり、パターンの不本意な縮小変形を避ける
ことができる。あるいは、第１〜第４のマスク偏向器4
1、42、44、45を電磁型にすれば、荷電粒子ビームの偏
向量を大きくすることができ、それだけステンシルマス
ク43上の偏向範囲を広くして透過孔の数を増大すること
ができる。Therefore, the incident position (D) on one electromagnetic focusing lens 40 and the emitting position (E) from the other electromagnetic focusing lens 46 are always along the path L regardless of the deflection operation of the charged particle beam, Since the center always coincides with the center of the two spherical surfaces 40a and 40b, the occurrence of spherical aberration is avoided, and the exposure accuracy can be improved. Further, the expected angle does not change, and it is possible to avoid undesired contraction deformation of the pattern. Alternatively, the first to fourth mask deflectors 4
If the 1, 42, 44, and 45 are of the electromagnetic type, the amount of deflection of the charged particle beam can be increased, and accordingly, the deflection range on the stencil mask 43 can be widened and the number of transmission holes can be increased.
なお、上記偏向信号S1〜S4の生成に際しては、例えば
S1の大きさ及び方向が決まると、このS1に応じて他のS2
〜S4が決定されるようにしておくのが望ましい。例え
ば、予め、第１〜第４のマスク偏向器の偏向特性を測定
しておき、ステンシルマスク43に形成された複数の透過
孔の１つを指定する選択データが与えられると、上記測
定マスクを参照しながら、S1そしてS2〜S4を決定すれば
よい。これにより、偏向信号発生装置33におけるデータ
処理量を少なくできる。In generating the deflection signals S 1 to S 4 , for example,
When the magnitude and direction of S 1 is determined, the other S 2 in response to the S 1
To S 4 it is desirable to leave as determined. For example, the deflection characteristics of the first to fourth mask deflectors are measured in advance, and when selection data specifying one of a plurality of transmission holes formed in the stencil mask 43 is given, the measurement mask is deactivated. with reference, it may be determined S 1 and S 2 to S 4. Thus, the amount of data processing in the deflection signal generator 33 can be reduced.
本発明によれば、集束レンズ系へのビームの入射位置
及び出射位置を常に光軸に一致させた状態で、ステンシ
ルマスク上を自在に偏向でき、ステンシルマスク上の繰
返しパターン数の増大、露光精度の改善及びパターンの
不本意な縮小変形を回避することができる。According to the present invention, it is possible to freely deflect the beam onto the stencil mask while keeping the incident position and the exit position of the beam to the focusing lens system always coincident with the optical axis, increase the number of repetitive patterns on the stencil mask, and increase the exposure accuracy. Can be improved, and undesired reduced deformation of the pattern can be avoided.
第１、２図は本発明に係る荷電粒子ビーム露光装置およ
びその露光方法の一実施例を示す図であり、 第１図はその装置の全体の構成図、 第２図はその装置の要部の構成図、 第３図は従来の荷電粒子ビーム露光装置を示すその要部
の構成図である。 17……集束レンズ系、 40……一方の電磁集束レンズ（第１の電磁集束レン
ズ）、 41……第１のマスク偏向器、 42……第２のマスク偏向器、 43……ステンシルマスク、 44……第３のマスク偏向器、 45……第４のマスク偏向器、 46……他方の電磁集束レンズ（第２の電磁集束レン
ズ）。1 and 2 are views showing an embodiment of a charged particle beam exposure apparatus and an exposure method according to the present invention. FIG. 1 is a diagram showing the entire configuration of the apparatus, and FIG. 2 is a main part of the apparatus. FIG. 3 is a block diagram of a main part of a conventional charged particle beam exposure apparatus. 17: Focusing lens system, 40: One electromagnetic focusing lens (first electromagnetic focusing lens), 41: First mask deflector, 42: Second mask deflector, 43: Stencil mask, 44... A third mask deflector, 45... A fourth mask deflector, 46... The other electromagnetic focusing lens (second electromagnetic focusing lens).
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭53−96679（ＪＰ，Ａ) 特開 昭61−80744（ＪＰ，Ａ) 特開 昭56−17015（ＪＰ，Ａ) 特開 昭59−22326（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/027──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-53-96679 (JP, A) JP-A-61-80744 (JP, A) JP-A-56-17015 (JP, A) JP-A-59-167 22326 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) H01L 21/027
Claims (3)
上流側から、第１の電磁集束レンズ、第１のマスク偏向
器、第２のマスク偏向器、ステンシルマスク、第３のマ
スク偏向器、第４のマスク偏向器及び第２の電磁集束レ
ンズ、を順次配列して構成された集束レンズ系を備え、
且つ、前記第１の電磁集束レンズと前記第２の電磁集束
レンズを異なる電源供給で動作する２つのレンズコイル
からなるダブレットレンズで構成し、前記ステンシルマ
スク上の回転の補正を前記第１の電磁集束レンズで行う
とともに、前記ステンシルマスクを通過したビームと被
露光試料との回転の補正を前記第２の電磁集束レンズで
行うことを特徴とする荷電粒子ビーム露光装置。1. A first electromagnetic focusing lens, a first mask deflector, a second mask deflector, a stencil mask, and a third mask deflection along a path of a charged particle beam from an upstream side of the path. Lens, a fourth mask deflector, and a second electromagnetic focusing lens, which are sequentially arranged.
In addition, the first electromagnetic focusing lens and the second electromagnetic focusing lens are configured by a doublet lens composed of two lens coils operated by different power supplies, and the rotation of the stencil mask is corrected by the first electromagnetic focusing lens. A charged particle beam exposure apparatus, wherein the correction is performed by a focusing lens, and the rotation of a beam passing through the stencil mask and the sample to be exposed is corrected by the second electromagnetic focusing lens.
おいて、第１の電磁集束レンズと第２の電磁集束レンズ
を用いてそれらの間の荷電粒子ビームを略平行ビームと
すると共に、第１のマスク偏向器と第２のマスク偏向器
を用いて荷電粒子ビームを略垂直にステンシルマスク上
に照射し、さらに第３のマスク偏向器と第４のマスク偏
向器を用いて荷電粒子ビームを第２の電磁集束レンズの
光軸に戻すようにしたことを特徴とする荷電粒子ビーム
露光方法。2. A charged particle beam exposure apparatus according to claim 1, wherein said first electromagnetic focusing lens and said second electromagnetic focusing lens are used to make the charged particle beam therebetween substantially parallel, The stencil mask is irradiated with a charged particle beam substantially vertically by using the mask deflector and the second mask deflector, and the charged particle beam is further irradiated by using the third mask deflector and the fourth mask deflector. 2. A charged particle beam exposure method characterized by returning to the optical axis of the second electromagnetic focusing lens.
おいて、第２、第３及び第４のマスク偏向器を第１のマ
スク偏向器に対して同期して偏向させ、それらの向き
は、第１と第２のマスク偏向器では逆方向、第２と第３
のマスク偏向器では同方向、及び第３と第４のマスク偏
向器では逆方向とし、さらに第２、第３及び第４のマス
ク偏向器の偏向量は第１のマスク偏向器の偏向量に対し
て各々一定の関係で一義的に定まる量とすることを特徴
とする荷電粒子ビーム露光方法。3. The charged particle beam exposure apparatus according to claim 1, wherein the second, third, and fourth mask deflectors are deflected synchronously with respect to the first mask deflector, and their directions are: The first and second mask deflectors have opposite directions, the second and third mask deflectors.
In the third mask deflector, the directions are the same, and in the third and fourth mask deflectors, the directions are opposite. Further, the deflection amounts of the second, third, and fourth mask deflectors are equal to the deflection amounts of the first mask deflector. A charged particle beam exposure method, wherein the amount is uniquely determined in a fixed relation to each other.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1068308A JP2843594B2 (en) | 1989-03-20 | 1989-03-20 | Charged particle beam exposure apparatus and its exposure method |
| DE68920281T DE68920281T2 (en) | 1988-10-31 | 1989-10-26 | Device and method for lithography using a beam of charged particles. |
| EP89311047A EP0367496B1 (en) | 1988-10-31 | 1989-10-26 | Charged particle beam lithography system and a method thereof |
| KR8915615A KR930002576B1 (en) | 1988-10-31 | 1989-10-30 | Charged particle beam lithography system and a method thereof |
| US07/429,500 US5051556A (en) | 1988-10-31 | 1989-10-31 | Charged particle beam lithography system and a method thereof |
| US07/585,777 US5173582A (en) | 1988-10-31 | 1990-09-20 | Charged particle beam lithography system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1068308A JP2843594B2 (en) | 1989-03-20 | 1989-03-20 | Charged particle beam exposure apparatus and its exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02246316A JPH02246316A (en) | 1990-10-02 |
| JP2843594B2 true JP2843594B2 (en) | 1999-01-06 |
Family
ID=13370045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1068308A Expired - Fee Related JP2843594B2 (en) | 1988-10-31 | 1989-03-20 | Charged particle beam exposure apparatus and its exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2843594B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6057700B2 (en) * | 2012-12-26 | 2017-01-11 | 株式会社ニューフレアテクノロジー | Multi charged particle beam lithography system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5396679A (en) * | 1977-02-04 | 1978-08-24 | Hitachi Ltd | Electron-beam drawing equipment |
| JPS561705A (en) * | 1979-06-19 | 1981-01-09 | Tokyo Shibaura Electric Co | Enclosed switchboard |
| JPH0732108B2 (en) * | 1982-07-28 | 1995-04-10 | 株式会社日立製作所 | Electron beam exposure system |
| JPS6180744A (en) * | 1984-09-27 | 1986-04-24 | Hitachi Ltd | Ion micro-beam apparatus |
-
1989
- 1989-03-20 JP JP1068308A patent/JP2843594B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02246316A (en) | 1990-10-02 |
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