JP2796077B2 - Substrate polishing apparatus and substrate polishing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate polishing apparatus and a substrate polishing method for performing chemical mechanical polishing (CMP) for flattening a surface of a semiconductor substrate made of silicon, a liquid crystal substrate, or the like. Things.

[0002]

2. Description of the Related Art Since 1990, in the above-mentioned chemical mechanical polishing technique for semiconductor substrates and liquid crystal substrates, the diameter of the substrate has been increased to 10 cm or more, and the polishing tends to be a single wafer processing. In particular, when polishing a semiconductor substrate, uniform polishing is required over the entire surface of the semiconductor substrate because the rule of a line pattern formed on the semiconductor substrate is extremely fine as 0.5 μm or less. It has become

A conventional method and apparatus for polishing a substrate will be described below with reference to the accompanying drawings.

FIG. 5 shows a schematic configuration of a substrate polishing apparatus according to a conventional example. In FIG. 5, reference numeral 51 denotes a pad mounting portion 51a made of a rigid body having a flat surface and a pad mounting portion 51a of the pad mounting portion 51a. A platen having a rotating shaft 51b extending vertically downward from the lower surface and rotating means (not shown) for rotating the rotating shaft 51b, and a polishing pad 52 having elasticity is provided on an upper surface of a pad mounting portion 51a of the platen 51. Is affixed.
Above the polishing pad 52, a substrate holding head 54 that holds and rotates the substrate 53 is provided. The substrate 53 is pressed against the polishing pad 52 while being rotated by the substrate holding head 54. A polishing agent 55 is dropped from the polishing agent supply pipe 56 onto the polishing pad 52 by a predetermined amount.

In the substrate polishing apparatus constructed as described above, the substrate holding head 54 is rotated while rotating the platen 51 and the polishing pad 52 to which the abrasive 55 is supplied.
Is pressed against the polishing pad 52, the polished surface of the substrate 53 is polished under pressure and relative speed.

At this time, if there is an uneven portion on the polishing surface of the substrate 53, the contact pressure with the polishing pad 52 is large at the convex portion, so that the relative polishing rate is increased and the polishing is performed. Because of the low contact pressure with, it is hardly polished. Therefore, the unevenness of the polished surface of the substrate 53 is reduced, and the polished surface of the substrate 53 becomes flat. This polishing technique is described in, for example, “January 1994
Monthly Semiconductor World "58-
59 pages and "Solid State Techn"
ology "July. 1992 / Japanese version 32-3
It is introduced on page 7 and so on.

However, the polishing pad 52 is crushed by the pressure at the time of polishing and is elastically deformed, so that the thickness differs depending on the portion, and the polishing abrasive grains cut into the surface of the polishing pad 52, so that the polishing pad 52 becomes clogged. The surface state of the polishing pad 52 changes, and the polishing rate changes. Also,
The polishing pad 5 is formed by friction between the substrate 53 and the polishing pad 52.
2, the polishing pad 52 becomes thin because the elastic deformation of the polishing pad 52 caused by pressure during polishing is not recovered.

As a result, unevenness is generated on the surface of the polishing pad 52 due to the variation in the thickness of the polishing pad 52. Therefore, even if the substrate 53 is pressed against the polishing pad 52 with a uniform force, the difference in pressure within the surface of the substrate 53 is maintained. This causes poor uniformity of the polishing amount in the substrate surface.

Conventionally, in order to avoid uneven polishing amount due to change (fatigue) of the surface condition of the polishing pad 52, dressing processing is performed on the polishing pad 52, that is, a convex portion on the surface of the polishing pad 52 is formed. The polishing pad 52 is kept in a constant state by performing a process of shaving or eliminating the clogging, so that uniform polishing can be obtained in the surface of the substrate 53.

[0010]

However, the method for dressing the polishing pad has the following problems.

First, in order to keep the surface of the polishing pad, which changes due to wear or the like during polishing, flat, it is necessary to adjust the amount of polishing of the polishing pad according to the amount of unevenness of the polishing pad surface caused by polishing. However, since the amount of unevenness on the polishing pad surface is very small, about several μm to several tens of μm, it is very difficult to grasp the amount of unevenness and control the amount of shaving. In particular, it is extremely difficult to accurately polish the surface of the substrate to the extent required in recent device manufacturing processes.

Second, when the polishing pad is shaved by the dressing process, the polishing pad becomes thinner, so that the elastic force of the polishing pad changes. As a result, the absorption force of the pressure difference generated in the surface of the substrate becomes smaller. Since it differs for each dressing process, there is a problem that the polishing characteristics (in-plane uniformity and step difference reducing performance) are not stable.

Third, it is necessary to replace the polishing pad within the range of the polishing pad thickness where the polishing performance is acceptable.
There is a problem that the work of replacing the polishing pad must be performed manually.

Fourth, the first problem can be avoided to some extent by absorbing the pressure difference generated in the plane of the substrate by using a polishing pad which is easily elastically deformed. When a polishing pad that is easy to use is used, there is a problem that the step absorption performance for the substrate is reduced.

Fifth, the thickness of the polishing pad attached to the surface plate is measured by a mechanical measuring method, but it is difficult to measure the thickness of the polishing pad wetted with an abrasive, cleaning water, or the like. However, the thickness of the polishing pad cannot be measured when the polishing process is continuously performed. In addition, in the mechanical measurement method, it is impossible to grasp the thickness distribution in the surface of the polishing pad unless measurement is performed at a large number of sites, and the surface of the polishing pad has irregularities of about several μm. On the other hand, the measurement accuracy with a commonly used micro gauge is about 10 μm, and therefore, the thickness of the polishing pad is limited due to the fact that accurate measurement cannot be performed. There is a problem that there is no choice but to guess based on.

In view of the foregoing, it is a first object of the present invention to provide a polishing pad having a flat surface without performing a dressing process. The second object is to make it possible to accurately grasp the information.

[0017]

A first substrate polishing apparatus according to the present invention comprises a rotatable rigid platen and a polishing plate formed by curing a liquid resin on the surface of the platen. The polishing apparatus includes a resin film, and a substrate holding means for holding the substrate to be polished and pressing the held substrate to be polished against the resin film for polishing.

According to the first substrate polishing apparatus, there is provided a polishing resin film formed by curing a liquid resin on the surface of the surface plate, and the liquid resin is applied to the surface of the surface plate by surface tension. Since it is hardened after being spread evenly, the surface of the polishing resin film is extremely flat and smooth.

In the first substrate polishing apparatus, the polishing resin film is preferably formed by curing a resin spin-coated on the surface of the surface plate.

In the first substrate polishing apparatus, the polishing resin film preferably contains abrasive grains for polishing.

In the first substrate polishing apparatus, the polishing resin film is preferably translucent.

When the polishing resin film is translucent, light intensity detecting means for detecting the intensity of light reflected on the surface of the surface plate and passing through the translucent polishing resin film is further provided. Preferably, it is provided.

It is preferable that the apparatus for polishing a first substrate further includes a resin supply means for supplying a liquid resin for forming the polishing resin film on the surface of the surface plate.

In the case where the first substrate polishing apparatus is provided with the resin supply means, the liquid resin supplied to the surface of the surface plate by the resin supply means is cured to form the polishing resin film. It is preferable to further include a resin curing unit to be formed.

In this case, the resin supplied to the surface of the platen by the resin supply means is thermosetting, and the resin curing means removes the resin supplied to the surface of the platen by the resin supply means. It is preferably a means for curing by heating.

In this case, the resin supplied to the surface of the surface plate by the resin supply means is photocurable, and the resin curing means is supplied to the surface of the surface plate by the resin supply means. It is preferably a means for irradiating the resin with ultraviolet rays to cure it.

When the first substrate polishing apparatus includes the resin supply means, the apparatus further includes a solvent supply means for supplying a solvent for dissolving the polishing resin film onto the surface plate. Is preferred.

A second substrate polishing apparatus according to the present invention holds and holds a rotatable rigid plate, a translucent polishing pad provided on the surface of the plate, and a substrate to be polished. The apparatus includes a substrate holding unit for pressing a substrate to be polished against the polishing pad, and a light intensity detecting unit for detecting the intensity of light reflected on the surface of the surface plate and passing through the translucent polishing pad.

According to the second substrate polishing apparatus, when the intensity of light reflected on the surface of the surface plate and passing through the translucent polishing pad is detected, the polishing pad is worn and the thickness is reduced over the entire surface. When the intensity is reduced, the light intensity increases, and when the polishing pad is partially worn and irregularities are formed on the surface of the polishing pad, the light intensity differs depending on the portion.

A third substrate polishing apparatus according to the present invention comprises a rotatable rigid surface plate, a multi-layer polishing pad provided on the surface plate and having a colored lower layer and a translucent upper layer. ,
Substrate holding means for holding the substrate to be polished and pressing the held substrate to be polished against the polishing pad; and detecting the intensity of light reflected on the surface of the lower layer of the polishing pad and passing through the translucent upper layer. Light intensity detecting means.

According to the third substrate polishing apparatus, when the intensity of light reflected by the surface of the lower layer of the polishing pad and passing through the translucent upper layer is detected, the polishing pad is worn, and the thickness over the entire surface is increased. When the surface roughness is reduced, the light intensity increases, and when the polishing pad is partially worn and irregularities are formed on the surface of the polishing pad, the light intensity differs depending on the portion.

The first method for polishing a substrate according to the present invention comprises the steps of spin-coating a liquid resin on the surface of a rigid platen, and curing and polishing the resin spin-coated on the surface of the platen. Forming a resin film for polishing; and holding the substrate to be polished and pressing the held substrate to be polished against the resin film for polishing to polish the substrate to be polished.

According to the first substrate polishing method, when the liquid resin spin-coated on the surface of the surface plate is cured to form a polishing resin film on the surface of the surface plate, the liquid resin is subjected to surface tension due to surface tension. The surface of the polishing resin film is extremely flat and smooth because it spreads uniformly on the surface of the platen.

In the first method for polishing a substrate, it is preferable that the polishing resin film contains abrasive grains for polishing.

In the first substrate polishing method, the polishing resin film is preferably translucent.

Preferably, the first substrate polishing method further comprises a step of removing the polishing resin film from the surface of the surface plate.

[0037] The first substrate polishing method further includes a step of supplying a resin to the surface of the polishing resin film having an uneven surface to planarize the surface of the polishing resin film. Is preferred.

The second method for polishing a substrate according to the present invention comprises the steps of: rotating a rigid platen having a translucent polishing pad on the surface; and pressing the substrate to be polished against the polishing pad. Polishing the surface of the substrate, detecting the intensity of light reflected by the surface of the surface plate and passing through the translucent polishing pad, and adjusting the thickness of the polishing pad based on the detected intensity of light. Estimating step.

According to the second substrate polishing method, when the intensity of light reflected on the surface of the surface plate and passing through the translucent polishing pad is detected, the polishing pad is worn and the thickness is reduced over the entire surface. When the intensity is reduced, the light intensity increases, and when the polishing pad is partially worn and irregularities are formed on the surface of the polishing pad, the light intensity differs depending on the portion.

The third method of polishing a substrate according to the present invention comprises the steps of: rotating a rigid surface plate provided with a multilayer polishing pad having a colored lower layer and a translucent upper layer on the surface;
Pressing the substrate to be polished against the polishing pad to polish the surface of the substrate to be polished, and detecting the intensity of light reflected by the surface of the lower layer of the polishing pad and passing through the translucent upper layer, Estimating the thickness of the polishing pad based on the detected light intensity.

According to the third method for polishing a substrate, when the intensity of light reflected on the surface of the lower layer of the polishing pad and passing through the translucent upper layer is detected, the polishing pad is worn, and the thickness over the entire surface is increased. When the surface roughness is reduced, the light intensity increases, and when the polishing pad is partially worn and irregularities are formed on the surface of the polishing pad, the light intensity differs depending on the portion.

[0042]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A substrate polishing apparatus and a substrate polishing method according to each embodiment of the present invention will be described below with reference to the drawings.

First Embodiment Hereinafter, a substrate polishing apparatus and a substrate polishing method according to a first embodiment will be described.

FIG. 1 shows a schematic structure of a substrate polishing apparatus according to a first embodiment of the present invention.
Reference numeral 31 denotes a rotatable surface plate made of a rigid body having a flat surface. Above the surface plate 31, a first pipe 32 for supplying a thermosetting liquid resin is provided.
A liquid resin is supplied over the entire surface of the surface plate 31 from the pipe 32, and the resin uniformly spread by the surface tension is cured by heat, thereby forming the polishing resin film 33 on the surface of the surface plate 31. I do. In this case, by dropping the resin from the first pipe 32 while rotating the platen 31, the resin is spread by the surface tension and the polishing resin film 33 having a uniform film thickness is formed on the platen 31. be able to. Further, the first pipe 32 is provided above the surface plate
A predetermined amount of resin is dripped onto the surface plate 31 while reciprocating in the radial direction from the vicinity of the center of 1 to uniformly supply the resin onto the surface plate 31.
Move outward from above. Diagonally above the surface plate 31,
A heating lamp 34 for heating and curing the resin supplied to the surface of the surface plate 31 is provided.

The thickness of the polishing resin film 33 is about 0.01 mm, which is about one tenth of the thickness of a conventional polishing pad of about 0.1 mm. As the resin for forming the polishing resin film 33, polyurethane, polyethylene, polyimide or the like can be used, and it may be hard or soft.

As shown in FIG. 1, a substrate holding device 36 for holding a substrate 35 is disposed above the surface plate 31. The substrate holding device 36 is rotated by a rotation driving means (not shown). A shaft 36A and a disk-shaped substrate holding head 36B integrally provided at a lower end of the rotating shaft 36A and holding the substrate 35 are provided.

A second pipe 37 for supplying an abrasive onto the polishing resin film 33 formed on the surface plate 31 when the substrate 35 is polished is provided above the surface plate 31. The substrate 35 is polished by the abrasive dropped from the second pipe 37 onto the polishing resin film 33. The second pipe 37 moves upward near the central portion of the platen 31 when the abrasive is dropped, and when the abrasive is not dropped, the platen 31 moves.
Move outward from above.

A third pipe 38 for supplying a solvent for dissolving the polishing resin film 33 formed on the surface of the surface plate 31 is provided above the surface plate 31. 3
Polishing resin film 3 worn by the solvent supplied from 8
3 is dissolved and removed. The third piping 38 is a platen 3
A predetermined amount of solvent is dropped on the surface plate 31 while dissolving and removing the worn polishing resin film 33 while moving in the radial direction from the vicinity of the center on the upper portion of 1, and the polishing resin film 33 is dissolved. If not, it moves outward from above the platen 31.

As described above, according to the substrate polishing apparatus of the first embodiment, the liquid resin is dropped on the rotating platen 31 and the resin spread by the surface tension is cured. The polishing resin film 33 having a flat and uniform thickness can be formed on the surface of the surface plate 31.

The platen 31 and the substrate holding device 36 are made of a material that is not affected by the solvent supplied from the third pipe 38, for example, alumina or the like. In this case, a protective pad made of, for example, an acrylic resin for protecting the surface of the surface plate 31 is stuck on the surface of the surface plate 31,
The surface plate 31 may be protected by appropriately replacing the protection pad damaged by the damage of the substrate 35 or the like.

Further, the first pipe 32 and the third pipe 38 may be used as a common pipe, and the supply of the resin and the supply of the solvent may be switched by a switching valve or the like.

In the first embodiment, a thermosetting resin is supplied from the first pipe 32, and the resin is cured by heating. A curable resin may be supplied, and the resin may be cured by ultraviolet rays.

Hereinafter, a method of polishing using the substrate polishing apparatus according to the first embodiment will be described with reference to the flowchart of FIG.

First, as a first step, while rotating the platen 31 at, for example, 30 rpm, a polyurethane resin dissolved in a solvent, for example, is dropped on the platen 31 from the first pipe 32 to thereby form a platen. A resin is applied over the entire surface of the board 31.

Next, as a second step, the rotation of the platen 31 is stopped, the surface of the resin on the platen 31 is flattened by the surface tension of the resin, and then the platen 31 is rotated slowly. The resin on the surface plate 31 is heated by a heating lamp 34 so that the resin is cured and the polishing resin film 33 is formed.
(In FIG. 2, it is expressed as a pad for convenience of illustration.) In this case, for example, the polyurethane resin dissolved in the solvent is heated to 60 ° C. while rotating the platen 31 at, for example, 5 rpm to evaporate the solvent, thereby forming the polishing resin film 33.

Next, as a third step, the substrate 35 is moved above the surface plate 31 while being held by the substrate holding device 36.
Thereafter, while rotating the platen 31, an abrasive containing abrasive grains is dropped onto the platen 31 from the second pipe 37, and the substrate holding device 36 is lowered while rotating in the same direction as the platen 31. The substrate 3 held by the substrate holding device 36
5 is pressed against the polishing resin film 33 so that the substrate 35 is pressed.
Polish the surface. When the polishing of the substrate 35 is completed, the substrate holding device 36 is moved from above the surface plate 31 to a predetermined position to unload the substrate 35. For example, when polishing a substrate 35 made of a wafer having a diameter of 200 mm, the polishing conditions are as follows.
An abrasive made of an alkaline solution having a pH of 10 to 11 and containing silica of 0 to 15 wt% is dropped at a rate of 200 cc / min, and the substrate 35 is transferred to the polishing resin film 33 while rotating the substrate holding device 36 at 20 rpm. By pressing, the pressure on the surface of the substrate 35 is set to be 300 g / cm 2.

Next, as a fourth step, a solvent for dissolving the polishing resin film 33, for example, an organic solvent such as acetone, concentrated sulfuric acid, or the like is supplied from the third pipe 38 while rotating the platen 31. The polishing resin film 3 on the surface plate 31
Dissolve 3 and remove.

By repeating the above-described first to fourth steps, the thickness and the amount of unevenness were changed by polishing.
That is, the tired polishing resin film 33 can be regenerated without dressing. That is, by removing the fatigued polishing resin film 33 and newly forming the polishing resin film 33 having a flat surface, the substrate 35 is formed by the polishing resin film 33 having a uniform thickness and no irregularities on the surface. Polishing can be performed stably.

In the first embodiment, the liquid resin is dropped while the platen 31 is rotated. However, depending on the viscosity of the resin used and the type and amount of the solvent, the rotation speed of the platen 31 and the resin to be dropped are determined. Is preferably adjusted.

Further, in the first embodiment, the polishing resin film 33 is formed by heating and curing the thermosetting resin by the heating lamp 34. Alternatively, the temperature of the surface plate 31 may be changed. And the resin may be cured by the heat of the surface plate 31.

In the first embodiment, the abrasive containing the abrasive grains is supplied. However, instead of this, the resin containing the abrasive grains is hardened and the polishing resin film 33 is supplied.
May be formed, and a liquid whose pH has been adjusted without polishing abrasive polishing may be supplied onto the polishing resin film 33.

In the fourth step, the polishing resin film 33 may be renewed after a predetermined number of substrates 35 have been polished, or when the polishing resin film 33 has exceeded its life, that is, The polishing resin film 33 may be renewed when the in-plane uniformity or the step absorption performance of the polishing resin film 33 exceeds an allowable range.

Further, when the life of the polishing resin film 33 has expired, the resin is supplied from the second pipe 32 onto the fatigued polishing resin film 33 without removing the polishing resin film 33. The polishing resin film 33 is flattened to form the polishing resin film 3.
The in-plane uniformity and step absorption performance of No. 3 may be restored. In this case, since the thickness of the polishing resin film 33 is extremely smaller than the thickness of the conventional polishing pad, the surface of the polishing resin film 33 can be planarized by supplying the resin.

(Second Embodiment) FIG. 3 shows a schematic structure of a substrate polishing apparatus according to a second embodiment of the present invention. In FIG. 3, reference numeral 31 denotes a rigid body having a flat surface. A rotatable, for example, red surface plate, 39 is a white translucent polishing pad attached on the surface plate 31, 40 is a first pipe for supplying an abrasive onto the polishing pad 39, 41 is A second pipe 42 for supplying water for cleaning onto the polishing pad 39 is a camera for measuring the color intensity (R, G, B) of the polishing pad 39. Above the surface plate 31, as in the first embodiment, a rotating shaft 36A that is rotated by rotation driving means (not shown), and a disk-shaped substrate integrally provided at the lower end of the rotating shaft 36A and holding the substrate 35 A substrate holding device 36 having a holding head 36B is disposed.

In the substrate polishing apparatus according to the second embodiment, water is supplied from the second pipe 41 to the polishing pad 3.
After cleaning the surface of 9 and removing the abrasive, the camera 42 measures the red color intensity of the platen 31 passing through the polishing pad 39. When the thickness of the polishing pad 39 is sufficiently large, the red color of the platen 31 does not pass through the polishing pad 39, so that the camera 42 captures the white color of the polishing pad 39, and the signal intensities of R, G, and B are substantially equal. . Polishing pad 3
Since 9 is translucent, as the polishing pad 39 becomes thinner, the red color of the platen 31 that passes through the polishing pad 39 increases, and the R signal intensity increases.

FIG. 4 shows the thickness of the polishing pad 39 and R, G,
The horizontal axis represents the thickness of the polishing pad 39, and the vertical axis represents the signal intensity of the color when the signal intensity of the color without the polishing pad 39 is set to 1. . As shown in FIG. 4, as the thickness of the polishing pad 39 decreases, the signal intensity of R increases while the signal intensity of G and B decreases, so that the thickness of the polishing pad 39 can be determined. . In addition, R, G,
By measuring the signal intensity of B, it is possible to determine the state of the unevenness of the polishing pad 39, that is, the change in thickness due to the portion.

As a method for producing the translucent polishing pad 39, the polishing pad 39 may be formed of a transparent resin containing fine particles that do not allow light to pass through, by about several wt%, or may be formed by forming fine bubbles in the transparent resin. A structure that causes irregular reflection may be used.

In the second embodiment, the red surface plate 31 and the white translucent polishing pad 39 are used. Instead, the white surface plate 31 and the red translucent polishing pad 39 are used. May be combined. In this case, the thickness of the polishing pad 39 can be determined based on a decrease in the signal intensity of R and an increase in the signal intensity of G and B. Various other color combinations can also be employed.

When the polishing pad 39 having a multilayer structure is used, instead of coloring the surface plate 31, the surface layer of the pad may be made translucent, and layers other than the surface layer may be colored.

In the second embodiment, the color signal intensity was measured after the surface of the polishing pad 39 was washed with water. Instead of this, the polishing agent on the polishing pad 39 was washed with high-pressure air or the like. The signal intensity of the color in the area where the abrasive has been removed may be measured by partially removing the abrasive.

Further, using the substrate polishing apparatus according to the first embodiment, a white translucent resin is supplied from a first pipe 32 onto a surface plate 31 colored red, for example, so that a white semitransparent resin is supplied. A transparent polishing resin film 33 may be formed, and the red signal intensity of the surface plate 31 passing through the polishing resin film 33 may be measured. In this case, for example, when the red signal intensity exceeds a predetermined value, a solvent is supplied from the third pipe 38 onto the surface plate 31 to remove the polishing resin film 33, and then the first pipe 32 The resin is supplied to form a new polishing resin film 33, or the resin is supplied from the first pipe 32 without removing the polishing resin film 33 to flatten the surface of the polishing resin film 33. Or you can.

[0072]

According to the first substrate polishing apparatus, since the polishing resin film formed by curing the liquid resin after being spread by the surface tension is provided, the surface of the polishing resin film is subjected to a dressing process. The surface of the substrate having a large diameter of 200 mm or more can be extremely uniformly polished because the surface is extremely flat and smooth without performing the polishing.

In the first substrate polishing apparatus, when the polishing resin film is formed by curing the resin spin-coated on the surface of the surface plate, the liquid resin supplied to the surface of the surface plate is hardened. Is uniformly spread on the surface of the platen, so that the surface of the polishing resin film is more flat and smooth.

In the first substrate polishing apparatus, when the polishing resin film contains abrasive grains for polishing, the substrate to be polished is polished using an abrasive containing no abrasive grains for polishing. Can be.

In the first substrate polishing apparatus, if the polishing resin film is translucent, the intensity of the light reflected on the surface of the platen and passing through the translucent polishing resin film is detected. When the pad is worn and the thickness is reduced over the entire surface, the light intensity is increased. When the polishing pad is partially worn and unevenness is formed on the surface of the polishing pad, the light intensity is increased. Since the strength of the polishing pad differs depending on the part, it is possible to accurately determine the time for replacing the polishing pad.

In the first substrate polishing apparatus, when the polishing resin film is translucent and the light intensity detecting means is provided, the light is reflected on the surface of the surface plate and passes through the translucent polishing resin film. The intensity of incoming light can be detected simply and reliably.

If the first substrate polishing apparatus is provided with a resin supply means, it is possible to easily supply a liquid resin for forming a polishing resin film on the surface of the surface plate.

When the first substrate polishing apparatus is provided with the resin supply means and the resin curing means, the liquid resin supplied to the surface of the surface plate by the resin supply means can be easily and reliably cured.

When the first substrate polishing apparatus has a resin supply means and a resin curing means, the resin supplied to the surface of the platen is thermosetting, and the resin curing means heats the resin. When the curing means is used, the polishing resin film can be easily formed by heating the thermosetting resin.

When the first substrate polishing apparatus is provided with a resin supply means and a resin curing means, the resin supplied to the surface of the surface plate is photocurable, and the resin curing means irradiates the resin with ultraviolet rays. When the photocurable resin is irradiated with ultraviolet rays, the resin film for polishing can be formed without applying heat to the resin.

When the first substrate polishing apparatus is provided with a resin supply means and a solvent supply means, a solvent for dissolving the polishing resin film can be supplied onto the surface plate by the solvent supply means. The operation of dissolving and removing the resin film for use can be easily performed.

According to the second substrate polishing apparatus, the intensity of light reflected on the surface of the surface plate and passing through the translucent polishing pad is detected, and the intensity of the detected light increases, When the strength varies depending on the part, it is known that the polishing pad has reached the end of its life, so that it is possible to accurately determine the time to replace the polishing pad.

According to the third substrate polishing apparatus, the intensity of light reflected by the surface of the lower layer of the polishing pad and passing through the translucent upper layer is detected, and the intensity of the detected light increases, When the strength of the part varies depending on the part,
Since it is known that the polishing pad has reached the end of its life, it is possible to accurately determine the time for replacing the polishing pad.

According to the first substrate polishing method, the liquid resin spin-coated on the surface of the surface plate is hardened to form a polishing resin film on the surface of the surface plate. Since a polishing resin film having an extremely flat and smooth surface is obtained, the surface of the substrate to be polished can be polished very uniformly.

In the first substrate polishing method, when the polishing resin film contains abrasive grains for polishing, the substrate to be polished is polished using an abrasive containing no abrasive grains for polishing. Can be.

In the first substrate polishing method, when the polishing resin film is translucent, the intensity of light reflected on the surface of the platen and passing through the translucent polishing resin film is detected. In addition, it is possible to accurately determine the replacement time of the polishing pad.

When the first substrate polishing method includes a step of removing the polishing resin film from the surface of the surface plate, a new resin is supplied to the surface of the surface plate to make the surface flat. A new resin film can be formed.

If the first substrate polishing method includes a step of supplying a resin to the surface of the polishing resin film having an uneven surface to planarize the surface of the polishing resin film, The surface of the polishing resin film can be flattened without removing the resin film.

According to the second substrate polishing method, the intensity of the light reflected on the surface of the surface plate and passing through the translucent polishing pad is detected, and the intensity of the detected light increases, When the strength varies depending on the part, it is known that the polishing pad has reached the end of its life, so that it is possible to accurately determine the time to replace the polishing pad.

According to the third substrate polishing method, the intensity of light reflected on the surface of the lower layer of the polishing pad and passing through the translucent upper layer is detected, and the intensity of the detected light increases, When the strength of the part varies depending on the part,
Since it is known that the polishing pad has reached the end of its life, it is possible to accurately determine the time for replacing the polishing pad.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a substrate polishing apparatus according to a first embodiment of the present invention.

FIG. 2 is a flowchart showing steps of a substrate polishing method according to the first embodiment of the present invention.

FIG. 3 is a schematic configuration diagram of a substrate polishing apparatus according to a second embodiment of the present invention.

FIG. 4 is a diagram showing a relationship between a thickness of a polishing pad used in a method for polishing a substrate and a signal intensity of a color according to a second embodiment of the present invention.

FIG. 5 is a schematic configuration diagram of a conventional substrate polishing apparatus.

[Explanation of symbols]

 31 surface plate 32 first piping 33 polishing resin film 34 heating lamp 35 substrate 36 substrate holding device 36A rotating shaft 36B substrate holding head 37 second piping 38 third piping 39 polishing pad 40 first piping 41 second Plumbing 42 camera

Claims (11)

(57) [Claims] 1. A rotatable rigid surface plate, a polishing resin film formed by curing a liquid resin on a surface of the surface plate, and a substrate to be polished held while holding the substrate to be polished. A substrate holding means for pressing against the polishing resin film, wherein the polishing resin film contains abrasive grains for polishing. 2. A rotatable rigid surface plate, a translucent polishing resin film formed by curing a liquid resin on the surface of the surface plate, and a substrate holding and holding the substrate to be polished. Substrate holding means for pressing a polishing substrate against the polishing resin film; and light intensity detecting means for detecting the intensity of light reflected on the surface of the surface plate and passing through the translucent polishing resin film. An apparatus for polishing a substrate, comprising: 3. A rotatable rigid surface plate, a polishing resin film formed by curing a liquid resin on the surface of the surface plate, and a substrate to be polished which holds and holds the substrate to be polished. Substrate holding means for pressing against the polishing resin film; resin supply means for supplying a liquid resin for forming the polishing resin film to the surface of the surface plate; surface of the surface plate by the resin supply means; A resin curing means for curing the liquid resin supplied to the surface to form the polishing resin film, wherein the resin supplied to the surface of the surface plate by the resin supply means is photocurable; An apparatus for polishing a substrate, wherein the curing means is means for irradiating the resin supplied to the surface of the surface plate with the resin supply means with ultraviolet rays to cure the resin. 4. A rotatable rigid surface plate, a semi-transparent polishing pad provided on a surface of the surface plate, and a substrate holding device for holding the substrate to be polished and pressing the held substrate to be polished against the polishing pad. And a light intensity detecting means for detecting the intensity of light reflected on the surface of the surface plate and passing through the translucent polishing pad. 5. A polishing pad having a multilayer structure having a rotatable rigid surface plate, a colored lower layer and a translucent upper layer provided on the surface of the surface plate, and a substrate holding and holding the substrate to be polished. Substrate holding means for pressing a polishing substrate against the polishing pad; and light intensity detecting means for detecting the intensity of light reflected on the surface of the lower layer of the polishing pad and passing through the translucent upper layer. An apparatus for polishing a substrate, characterized in that: 6. The surface of a rigid platen contains abrasive grains for polishing.
A step of spin-coating a liquid resin and curing the spin-coated resin on the surface of the surface plate
Forming a polishing resin film containing abrasive grains, and holding the polished substrate while holding the polished substrate;
Polishing the substrate to be polished by pressing against the polishing resin film; and
A method for polishing a substrate, comprising: 7. A translucent liquid resin on the surface of a rigid platen.
Step of spin-coating, and curing the resin spin-coated on the surface of the surface plate
Forming a translucent polishing resin film, and holding the polished substrate while holding the polished substrate;
Polishing the substrate to be polished by pressing against the polishing resin film; and
A method for polishing a substrate, comprising: 8. A liquid resin is spin-coated on the surface of a rigid surface plate.
Cloth step and curing the resin spin-coated on the surface of the surface plate
Forming a polishing resin film, and holding the polished substrate while holding the polished substrate;
Step of polishing a substrate to be polished by pressing against a polishing resin film
When, removing the polishing resin film from the surface of the plate
A method for polishing a substrate, comprising: 9. A liquid resin is spin-coated on the surface of a rigid surface plate.
Cloth step and curing the resin spin-coated on the surface of the surface plate
Forming a polishing resin film, and holding the polished substrate while holding the polished substrate;
Step of polishing a substrate to be polished by pressing against a polishing resin film
A resin on the surface of the polishing resin film having an uneven surface.
Supplying and flattening the surface of the polishing resin film.
A method for polishing a substrate, comprising: 10. A step of rotating a rigid platen provided with a semi-transparent polishing pad on the surface, a step of pressing a substrate to be polished against the polishing pad and polishing the surface of the substrate to be polished, Detecting the intensity of light reflected on the surface of the board and passing through the translucent polishing pad, and estimating the thickness of the polishing pad based on the detected intensity of light. Substrate polishing method. 11. A step of rotating a rigid platen provided with a multi-layered polishing pad having a colored lower layer and a translucent upper layer on the surface, and pressing a substrate to be polished against the polishing pad to form the polishing pad. A step of polishing the surface of the polishing substrate, detecting the intensity of light reflected by the surface of the lower layer of the polishing pad and passing through the translucent upper layer, based on the detected light intensity of the polishing pad A step of estimating a film thickness.