JP2791620B2 - Electronic equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device requiring a large number of output terminals, such as a display device of a segment type or a matrix type, or a device having a large number of input switches and a method of manufacturing the same. The present invention relates to a device in which a semiconductor integrated circuit accompanying the above device is incorporated on the same substrate as the device. In particular, an object of the present invention is to provide an inexpensive device capable of providing a large amount of display information.

[0002]

2. Description of the Related Art Display devices used in calculators and other devices are roughly classified into a segment system and a matrix system. In any of the methods currently used, one electrode of the display element is selectively formed on an insulating substrate such as glass by a transparent conductive material film such as ITO, for example, and a number of electrodes extending therefrom are formed. It has a configuration in which wiring is connected to a single crystal semiconductor integrated circuit (IC) chip.

The connection method includes a wire bonding method, a TAB (tape automatic bonding) method, and a COG method.
The (chip-on-glass) method is known. Among these, the COG method is the method that can achieve the highest integration. An example is shown in FIG.

In the COG method, the IC chip 202 is directly
Alternatively, the display element substrate 201 may be sandwiched by an anisotropic conductive material.
Glue to At this time, the bonding portion 203 of the display element substrate
Is provided with a connection electrode. Figure 2
As shown in the enlarged view of (A), as can be seen, a large number of terminals 204 must be formed. In addition, since the IC chip must be connected to these terminals exactly, it is necessary to accurately position the IC chip. Usually, in the COG method, the interval between adjacent terminals is 10
Since it is about 0 μm, the same precision is required for the alignment of the IC chip.

On the other hand, the number of terminals depends on the display capacity of the display element. For example, in a 7-segment display, eight wirings including a decimal point extend for one character (digit).
Eight terminals must be formed. For example, 10
In the case of displaying characters (digits), 80 terminals are formed,
All these terminals must be connected to the corresponding terminals of the IC chip. Therefore, the yield in this COG process was not high.

Further, as is apparent from the drawing, the wiring is crowded near the connection portion, and a short circuit occurs between adjacent wirings, or the wiring is disconnected. In particular, the probability of such a defect occurring when the wiring interval is reduced and the width of the wiring is reduced significantly increases.

FIG. 2B is a block diagram of a commercially available calculator. This is a calculator using solar cells, but as shown in the figure, an input device consisting of push buttons, an arithmetic circuit,
It comprises a segment type liquid crystal display device, a control circuit for driving the liquid crystal display device, a solar cell and a backup power supply (battery).

In a calculator having a simple type of operation, the operation circuit and the control circuit of a liquid crystal display (LCD) are often integrated into one IC chip. Those capable of advanced calculations are divided into a plurality of calculation chips and an LCD control chip. In either the matrix method or the segment method, the display element itself cannot display a numerical value (digital signal) extracted from the arithmetic circuit as a number. Therefore, a control circuit for decoding the digital signal and sending the signal to each electrode of the LCD has been required. And, when connecting such a control circuit and the display element,
The problem described above has arisen.

An input device such as a keyboard has the same problem. In an input device having many switches, the signals from each switch are collected into a digital signal,
It was necessary to supply it to the outside by one output signal line. Such a signal processing requires an IC chip,
The work of connecting a large number of wirings extending from the respective switches (keys) to the IC chip was extremely troublesome, and the yield was not high.

[0010]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the conventional display device or input device, and in particular, the COG method and other IC chips which are directly linked to a reduction in yield. The present invention relates to a display device and an input device that do not require mounting technology, and an application product thereof.

[0011]

The present invention seeks to form a semiconductor integrated circuit having the same function as an IC chip on a display element or an input device substrate in order to eliminate the mounting of a high-density IC chip. For example, in the present invention, not only the transparent electrode of the display element, but also the control circuit of the display element and, in some cases, other arithmetic / logic circuits are integrated on a transparent insulating substrate used for the display element. Suggest something. As described above, since both the display element and the integrated circuit are formed on the same substrate, the chip mounting process is not required, and the yield resulting therefrom does not decrease.

Of course, when forming an integrated circuit, it is not possible to use an unsuitable substrate material. For example, when a polycrystalline silicon TFT formed by a high-temperature process (a maximum process temperature of 1000 ° C. or higher) is used as an integrated circuit, quartz is desirable as a substrate. In addition, in a polycrystalline silicon TFT formed by a low-temperature process (a maximum process temperature of 550 ° C. or more), various non-alkali glasses can be used in addition to a quartz substrate. The choice of substrate depends on the fabrication process.

When the present invention is used for a display element, other elements may be formed on such a substrate in addition to the transparent electrode and the integrated circuit of the display element. For example, when applied to a calculator, a photoelectric conversion element such as a solar cell may be formed on the same substrate as a power supply. An example is shown in FIG. As shown in FIG. 1A, an electronic device according to the present invention includes an integrated circuit area 1 including a solar cell element area 102, a logic / operation circuit, and a display element control circuit on a glass substrate 101.
03, and a display element electrode region 104 of a segment type. A matrix method may be used instead of the segment method. Since the thin-film forming technique may be applied to the connection of these regions, unlike the case of the COG method or other methods, no failure such as connection failure, disconnection, short circuit or the like occurs. Therefore, a sufficient effect is exhibited in improving the yield. In particular, a display element driving circuit of such an integrated circuit is used for a display element (9-digit segment system).
If it is formed to be elongated in accordance with the requirements, the density of the wiring is reduced, and it is extremely effective for defects such as disconnection and short circuit.

[0014]

【Example】

[Embodiment 1] FIG. 1B shows an electronic device according to the present invention in a plastic package 1 having a push button 105.
Here is an example of a calculator incorporated in 06. As shown in FIG. 1A, an electronic device of the present invention has an integrated circuit region 103 made of an aluminum gate silicon TFT manufactured by a low-temperature process and an ITO for a liquid crystal display element on a 7059 glass substrate 101 manufactured by Corning. A segment-type transparent conductive film region (display element region) 104 made of and a PIN-type amorphous silicon solar cell region 102 are formed. A known method may be used for each element technology. For example, regarding the production of a low-temperature silicon TFT, Japanese Patent Application No. 3-237, filed by the present inventors, is disclosed.
100, 3-238713, 4-30220, etc. may be referred to.

The fabrication of each region was performed separately. First, a TFT was manufactured by a low-temperature process. The maximum process temperature at this time was 600 ° C. Thereafter, the TFTs were connected by aluminum wiring to form a semiconductor integrated circuit region 103, and then a pixel electrode of the liquid crystal display region 104 was formed of ITO via a chromium film. At this time, the semiconductor integrated circuit 103 and each pixel electrode in the display element region 104 were electrically connected. Further, a solar cell region 102 composed of a PIN3 layer of amorphous silicon was formed by a plasma CVD method. Since the maximum process temperature for producing the solar cell region affects the aluminum wiring of the semiconductor integrated circuit portion, it is desirable that the temperature be as low as possible. In this embodiment, the maximum process temperature is set to 250 to 350 ° C. At the final stage of forming the solar cell region 102, an aluminum film is formed as a back electrode, and in this step, connection to the semiconductor integrated circuit portion is also made. Thereafter, a liquid crystal alignment film was formed to complete the electronic device.

A back substrate is superimposed on the electronic device of FIG. 1A manufactured as described above, TN liquid crystal is injected, and a polarizing plate is further superimposed to complete a display device. Surface (ie, FIG. 1)
(The back side of (A)) was packaged with the front side. The substantial thickness limit of this package excluding the push button is determined by the thickness of the back substrate facing the glass substrate 101, and can be typically up to about 1 mm. Although it was possible to make it smaller, there was a problem due to mechanical strength. In the present embodiment, as shown in FIG. 1, the semiconductor integrated circuit region 103 has an elongated shape.
Solar cell area 102 and liquid crystal segment display element area 10
4. Such an arrangement has advantages such as shortening wiring, reducing noise, preventing disconnection, and the like in transmitting a signal to a display element while supplying power to a semiconductor integrated circuit region, and is extremely efficient. Met. Also,
Necessary arithmetic circuits and circuits for driving display elements are incorporated in the semiconductor integrated circuit area. As described above, by making the semiconductor integrated circuit region adjacent to the display element region, the connection of the wiring to the display element was facilitated, and the failure such as disconnection or short circuit due to the crowded wiring could be reduced. In particular, in order to effectively send a signal to the display element and simplify the wiring, it is desired that the length of the semiconductor integrated circuit region be substantially equal to the length of the display element region as in this embodiment.

[Embodiment 2] In this embodiment, an electronic device in which a semiconductor integrated circuit, a matrix type liquid crystal display panel, a solar cell, and an optical input switch device are incorporated into one substrate will be described. As shown in FIG. 3A, the apparatus manufactured in this example is a transparent glass (Corning 70).
59) On the substrate 302, the solar cell 303 and the arithmetic circuit 30
7. A matrix type (320 × 128 dot) TN liquid crystal display panel 308, a scan driver circuit 305, data driver circuits 304 and 306, and an optical input device 309 are integrated. The surface on which these elements and devices are formed is opposed to the glass back substrate 310, and the portion into which the liquid crystal is injected is covered with a resin package 301 for mechanical protection. Although not shown in the drawing, a polarizing plate is also provided.

Describing the liquid crystal display panel, the screen is of a passive matrix type which is divided into upper and lower parts and driven at 1/64 duty. Conventionally, such a matrix type display panel has been adopted only for high-end models. However, in order to drive the matrix, an IC chip must be connected by a TAB method or a COG method, which results in cost reduction. Because it took. Further, the entire device was large and heavy due to these connections.

However, the display capacity of the simple segment system is limited, and the purpose of use is limited. For example, there were no problems displaying numbers, but displaying alphabets and kana characters required complicated segments, making it almost impossible to display kanji. On the other hand, the need to display kanji and alphabets was strong. The present invention is suitable for such needs. The cost was also less than half that of the COG method. However, in order to obtain a clear display by 1/64 duty driving, even if the threshold voltage of the liquid crystal is about 3V,
The applied voltage required 10 V or more, preferably 15 to 30 V. Therefore, in the present invention, a booster circuit is provided, and a TFT having a high withstand voltage and anodized aluminum gate is used. Regarding the manufacturing method and structure of this TFT, see, for example, Japanese Patent Application No. 3-2 of the present inventors.
37100, 3-238713, 4-30220, etc. may be referred to.

In this electronic apparatus, a push button type input switch used in a usual computer or calculator is not used, and optical input is performed. That is, each input switch 309 of the present embodiment has a small optical sensor section 311 formed at the center thereof. This optical sensor may be made of a material that changes its conductivity by light irradiation, such as a compound semiconductor such as CdSe or CdTe. Those having a laminated structure may be used. In the present embodiment, the latter is used because it can be formed at the same time when the solar cell 303 is formed. In the present embodiment, the display portion 309 of the input switch (actually, only the portion corresponding to the button is printed, and the structure is not particularly different from other substrate portions) 309 is 6 mm × 6 mm. On the other hand, the optical sensor portion 311 was remarkably reduced to 0.5 mm × 0.5 mm and formed at the center of each display portion.

The principle of operation of such an optical input device will be described. The circuit diagram is shown in FIG. That is, the optical sensors (composed of a photodiode and a charge storage capacitor) 311 are connected in parallel by common wiring. When an input is to be performed in the present apparatus, the display of the switch portion is pressed by a finger, but the light to the optical sensor in the pressed portion is cut off. The input is performed by that. Signals from these optical sensors are collected in a signal comparison circuit 312. In this signal comparison circuit, signals from each optical sensor are periodically compared. In this embodiment, 0.2
Sampling of the light sensor signal every second,
The data was integrated. That is, in order to input a signal, it is necessary to press the switch portion with a finger for about 0.2 seconds. However, there are cases where the input can be determined even for a shorter time (for example, about 0.1 second). Also,
If the button is pressed for more than 0.2 seconds, it is necessary to take a preventive measure to prevent data from overlapping and inputting. For example, if you hold down the same switch for about one second,
Since sampling is performed more times, there is a risk that it is determined that the same input signal is input five consecutive times. However, it is easy to solve such a problem, and if the same input as the result of the first sampling is continuously made at the time of the second sampling, a program that invalidates the result of the second sampling is used. What is necessary is just to make a flowchart. To reinforce this, a program flowchart invalidates all input signals unless there is no input during at least one sampling period after the first input. Is also good.

In this embodiment, the average value and the standard deviation of the signals collected from the respective optical sensors are obtained, and the lowest value and the optical sensor which has transmitted the lowest value are determined. In principle,
The switch part of the light sensor that transmitted the lowest value is regarded as input. However, the light hitting such a light sensor is different depending on the location, so even if you do not press the button, the part where the light is incident accidentally emits the lowest value because of the shadow of the finger etc. May cause erroneous input. In order to avoid this, the present embodiment employs a mechanism for calculating a standard deviation and determining only a switch portion that has transmitted intentional data as an input. That is, in this embodiment, when the lowest value is obtained, only when the value is equal to or less than (average value−standard deviation) is determined as an input. Therefore, an accidental input is prevented from being erroneously input.

To further enhance this method, for example,
A method may be adopted in which, when there is only one signal equal to or less than (mean value−standard deviation), the signal is used as an input signal, and when there are two or more signals, it is considered that there is no input.

The method of using the standard deviation is effective in discriminating between intentional and accidental ones. For example, when an operation is performed in a sufficiently bright environment, the finger is used. Even an accidental signal like the shadow of
(Standard deviation). In that case, input cannot be performed by the latter method out of the former two methods. Also, in the former method, even if the shadow of the finger just passes through the switch part, the signal emitted by the light sensor
The signal is sufficiently smaller than other signals, for example, lower than a reference value of (average value−standard deviation), resulting in an erroneous input.

In order to avoid such a problem, a signal emitted from each optical sensor is passed through a limiter, all signals having a certain value or more are regarded as the same value, and an average value and a standard deviation are calculated. The above determination may be made.
Alternatively, the determination may be made by excluding a signal having a certain output level or more from the beginning and calculating an average value / standard deviation using only signals having a certain output level or less.

In this embodiment, the above-described formula is adopted as a reference for distinguishing between an intentional input signal and an accidental input signal. However, it is needless to say that another reference formula may be adopted. . Alternatively, two lower signal levels may be determined, and the determination may be made based on whether or not the difference is equal to or greater than a certain value.

After the input signal is determined in this manner, a signal is transmitted from the signal comparison circuit 312 and input to the circuit 313 at the input stage of the arithmetic circuit. In this embodiment,
Since the input operation is not mechanical as in the prior art, the structure is extremely simple, and there is no reduction in reliability due to mechanical damage (for example, destruction of a push button). In particular, since the switch portion and the arithmetic circuit can be formed on one substrate, there is substantially no wiring connection step, and the yield can be improved and the cost can be reduced.

In a conventional pocket computer of this type, the production of a keyboard section composed of push buttons is a labor-intensive operation of soldering the wiring of each button. In addition, the button portion needs to have sufficient mechanical reliability and requires a high-grade material. The first thing that would break if you continued to use it was the buttons. Therefore, the cost of the keyboard or push buttons has become extremely high.

In reality, when such labor-intensive work is performed in Japan, where labor is scarce, labor costs are extremely high, so that such labor-intensive work is often produced in countries with low labor costs, such as Taiwan and Malaysia. Was. However, labor costs have been rising in these countries in recent years, and there is a move to lower wage production in Bangladesh and India. For Japan, this is a problem of hollowing out industry. Of course, it is preferable in terms of distributing wealth to developing countries, but in reality, we have adopted a method in which parts are transported from Japan to these overseas bases, assembled overseas, and then transported back to Japan. ing. Therefore, the cost of transporting products and parts is enormous. The cost increases as the manufacturing base is further away from Japan. Remember that transport is not only expensive, but also consumes a lot of oil. Considering global warming and other environmental issues, it is obvious that it is desirable to avoid unnecessary transport as much as possible and to produce consistently.

The manufacture of the device shown in this embodiment is not labor intensive. Therefore, even if it is manufactured in Japan, the cost is low, and rather, Japan with better infrastructure is more suitable for production. The degree of environmental destruction due to transportation is also significantly reduced.

Embodiment 3 FIG. 4 shows an example of a process for carrying out the present invention. First, a silicon nitride film for blocking mobile ions such as alkali ions is formed over a glass substrate 401. As the substrate material, a material having no or low alkali content is desirable. The most desirable one is a quartz substrate. Among them, synthetic quartz has no alkali ions contained in the substrate. Since quartz has excellent heat resistance, a gate oxide film can be formed by a thermal oxidation method when forming a semiconductor integrated circuit. When such an ideal substrate material is used, the silicon nitride film 402 need not be provided. However, large quartz substrates are very expensive. That is, the substrate cost per unit area increases as the area increases. Therefore, when a large-sized device is formed, the use of a quartz substrate makes the cost of the substrate ridiculous. Alternatively, various alkali-free glasses can be used. For example, Corning 705
9 glass, 1733 glass, 1724 glass, 1729
Examples include glass, N-0 glass of NEC Corporation, and NH-35 glass of NH Techno Glass. These substrates are
When a liquid crystal display is adopted as a display method, it is desirable to use a polished one without waviness or warpage in order to keep the cell thickness constant. In addition, since each glass has a different strain point, a glass suitable for the highest temperature of the manufacturing process must be selected. Hereinafter, an example using a non-quartz glass substrate will be described.

A method for forming a silicon nitride film is a known method using a reduced pressure CV.
The D method or the plasma CVD method may be used. Silicon nitride film 4
On top of this, a silicon oxide film 403 was deposited. The thickness varies depending on the quality of the silicon nitride film,
m is preferred. As a film forming method, a sputtering method or an ECR
The plasma CVD method was suitable.

Further, the ITO film 4 is formed by sputtering.
04 was selectively formed. This ITO film becomes the electrode on the incident side of the solar cell region. Its thickness was suitably from 20 to 500 nm. If it is too thin, the sheet resistance increases, which is not preferable. Next, an N-type silicon carbide film 405 was selectively formed by a plasma CVD method or a low pressure CVD method. The thickness is desirably 30 to 200 nm. Further, a substantially intrinsic silicon film is formed thereon and patterned to form an I layer 406 in the solar cell region and a T layer in the integrated circuit region.
An active layer 407 of FT was formed. Its thickness is 2
0-200 nm is preferred. In this embodiment,
Since the silicon films 406 and 407 are formed at the same time, they have the same thickness. Therefore, the thickness must be suitable for use in a solar cell and in use in a TFT. Silicon film 406 in solar cell area
Regarding the above, if the configuration is such that the N-type silicon film 405 is completely covered, a short circuit in a later step can be prevented, which is convenient.

In this state, thermal annealing was performed for the entire substrate to crystallize the silicon film. When the silicon film is made of silane, the annealing temperature is 55
0-650 ° C was preferred. If the material of the silicon film is disilane instead of silane, the annealing temperature is further increased by 5
The temperature could be lowered by 0 ° C. The annealing atmosphere is preferably in nitrogen, hydrogen, or vacuum. The annealing time depends on the temperature and is set to 12 to 72 hours.

Thereafter, a sputtering method or an ECR plasma CV
A gate oxide film 408 was formed by Method D. The thickness is 100 ~
300 nm was preferred. Thus, FIG.
(A) was obtained.

Thereafter, a gate electrode of the TFT was formed of aluminum. For forming the aluminum film, a sputtering method or an electron beam evaporation method is desirable. After patterning the aluminum, aluminum oxide was formed on the surface and side surfaces of the aluminum film by anodic oxidation to form a gate electrode. That is, the substantial gate electrode 409 and the aluminum oxide film 410 around it were formed. An anodizing method is disclosed in Japanese Patent Application No. Hei 3-23771 filed by the present inventor.
00, 3-238713, 4-30220 and the like.

Thereafter, ion implantation was performed while the solar cell region was covered with the photoresist 411 to form an N-type impurity region (source, drain) 412. FIG. 4 shows only NMOS, but when a CMOS circuit is formed, P-type impurity must be similarly implanted into the PMOS TFT. Needless to say, it is desirable that the solar cell region is also masked at that time.

After this step, the crystal broken by the ion implantation was recrystallized by a laser annealing method. The above application was referred to for the conditions of laser annealing. Thus, FIG. 4B was obtained.

After removing the photoresist, a P-type silicon film 413 was selectively formed in the solar cell region by a low pressure CVD method or a plasma CVD method. Thickness is 30-200nm
Is desirable. Thus, the PIN structure in the solar cell area was completed. As is clear from the above description, the I layer in the solar cell region is substantially in a polycrystalline state similarly to the active layer of the TFT, and has a better energy conversion efficiency than conventional amorphous silicon.

Thereafter, an interlayer insulator 414 was formed, holes for electrodes were formed, an aluminum film was formed, and aluminum wirings 415 and 416 were formed. At this time, a chromium film may be formed on the aluminum film to form a multi-layer structure of aluminum / chromium. By forming the upper surface with chromium in this way, the resistance at the boundary when an ITO film is formed later can be reduced. After that, IT
An O film was selectively formed, and an electrode 417 in a display pixel region was formed. This state is shown in FIG.

On the other hand, on the other glass substrate 418, a metal film 419 made of chromium, aluminum, or the like was formed only in the display pixel area. This becomes a reflective material. As the glass substrate 418, a material containing an alkali can be used. A polyimide resin was formed flat on both of the substrates thus obtained, and rubbing was performed to obtain alignment films 420 and 421. Then, a liquid crystal material, for example, a TN liquid crystal 422 was injected between the substrates so as to oppose each other, and the substrates were sealed. Thus, an electronic device having the solar cell region, the integrated circuit region, and the display pixel region was manufactured. The cross section is shown in FIG.

[0042]

The electronic device according to the present invention is the simplest one in which a display device or a device having a large number of input switches and its peripheral circuits are formed on the same substrate. Further, a semiconductor integrated circuit, a power supply element such as a solar cell, and an element such as an input element such as an optical sensor are integrated. as a result,
In a conventional electronic device, functions that could not be realized in terms of cost could be incorporated.

For example, according to the present invention, a matrix type display device, which was conventionally difficult and expensive, can be manufactured at low cost. This is particularly effective in small areas. For example, in the case of a large STN liquid crystal panel of 640 × 480 dots, the required number of ICs is 11 (160 IC terminals, 1/24
When the unit price of the IC is 1,000 yen in the case of 0 duty drive), the cost is 11,000 yen. On the other hand, if this is a 1/8 scale 320 × 120 dot TN liquid crystal panel, the number of necessary ICs is 5, the cost is 5,000 yen, and 1/8 It does not become. That is, the smaller the area, the higher the cost per area.

Conversely, if a drive circuit of a 640.times.480 dot matrix is to be manufactured according to the present invention, the cost becomes extremely high. This is because the cost of the substrate is increased and the yield is reduced as the circuit becomes larger. However, the cost is drastically reduced for a 1/8 scale matrix. Estimated cost is 1/100
The total cost is about 2,000 yen, which is far below 6,000 yen for the TAB connection method. For example, even in the case of a 320 × 120 dot panel and a TAB connection, if the STN liquid crystal is used instead of the TN liquid crystal, the number of ICs to be used can be reduced to three.
This is because STN liquid crystal is suitable for high duty driving. In that case, the total cost is 4,000 yen. However, the STN liquid crystal requires delicate control of the cell thickness, and has a coloring effect. To remove such a coloring effect, a retardation film or the like must be used, and the viewing angle is narrow. Overall, the characteristics are not good as compared with the TN liquid crystal.

Further, in the optical input device (switch board or switch panel) described in the second embodiment, a synergistic effect can be obtained by using the same operation circuit and board. In other words, even when used alone, there are benefits such as no need for mechanical parts, no reduction in reliability due to mechanical destruction, and less physical fatigue and less failure due to use. Even if you can, the final cost will be no different than a conventional push button type, considering the connection problem. In the present invention, not only a large number of optical sensors are formed on such a switch substrate, but also an integrated circuit for determining these inputs is formed at the same time, thereby eliminating the need for wiring connection. For example, if the switch board has only 20 optical sensors, the wiring coming out of it is 20
Books, which must be connected to IC chips of necessary signal processing circuits. However, in the present invention,
Since the circuits for processing the signals obtained from the sensors together with the twenty optical sensors are also formed on the same substrate, only one wiring for outputting a digital signal in the end (strictly speaking, the power supply line is also included) (Although it is necessary) it is only necessary to connect to the outside, and the labor for wiring connection is significantly reduced. Further, if the arithmetic circuit and the display device are incorporated on the same substrate as in the second embodiment, a system can be constructed without wiring work. Thus, the present invention is an industrially extremely useful invention.

[Brief description of the drawings]

FIG. 1 shows an example (calculator) of an electronic device according to the present invention.

FIG. 2 shows a connection method of a display portion of a conventional electronic device.

FIG. 3 shows an example of an electronic device according to the present invention.

FIG. 4 shows an example of a manufacturing process of an electronic device according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 101 ... Substrate 102 ... Solar cell area 103 ... Operation circuit area 104 ... Segment type liquid crystal display area 105 ... Button 106 ... Package

──────────────────────────────────────────────────の Continued on front page (51) Int.Cl. ⁶ Identification code FI H01L 29/786 H01L 31/04 Q 31/04

Claims (7)

(57) [Claims] 1. A first and a second substrate provided opposite to each other.
And a display element and a semiconductor integrated circuit for driving the display element
And a power supply having a photoelectric conversion element.
To an electronic device, the first pixel electrode and the semiconductor integrated times on the first substrate
And a path and the photoelectric conversion element are formed on the second substrate.
A second pixel electrode is formed on the first pixel electrode; the first substrate is an insulating substrate;
Is formed of a transparent conductive film, and the semiconductor integrated circuit and the optical
The photoelectric conversion element is formed using a semiconductor thin film, and the first pixel electrode, the semiconductor integrated circuit, and the photoelectric conversion element.
Forming a first resin film that covers the replacement element and planarizes the first resin film;
A second resin film is formed to cover the second pixel electrode,
Liquid crystal exists between the first resin film and the second resin film.
And which, the said second substrate at least the pixel electrode semiconductor
Provided facing the integrated circuit and the photoelectric conversion element
An electronic device, comprising: 2. The semiconductor integrated circuit according to claim 1, wherein
Semiconductor thin film is monocrystalline or polycrystalline or substantially
Polycrystalline, and the semiconductor thin film of the photoelectric conversion element is amorphous.
An electronic device, which is a fuzz. 3. A first and a second substrate provided to face each other.
And a display element and a semiconductor integrated circuit for driving the display element
Display device, a power supply having a photoelectric conversion element,
And an input device having a sensor.
A first pixel electrode and the semiconductor integrated circuit on the first substrate.
A path, the photoelectric conversion element, and the optical sensor are formed,
A second pixel electrode is formed on the second substrate, the first substrate is an insulating substrate, and the first pixel electrode
Is formed of a transparent conductive film, and the semiconductor integrated circuit and the optical
The electric conversion element and the optical sensor are formed using a semiconductor thin film
And the first pixel electrode, the semiconductor integrated circuit, and the photoelectric conversion
First resin covering the replacement element and the optical sensor for planarization
A film is formed, and a second resin covers the second pixel electrode.
A film is formed, and the first resin film and the second resin film are formed.
A liquid crystal exists between them, and the second substrate has at least the pixel electrode and the semiconductor
Facing the integrated circuit, the photoelectric conversion element, and the optical sensor
An electronic device characterized by being provided. 4. The semiconductor integrated circuit according to claim 3, wherein
Semiconductor thin film is monocrystalline or polycrystalline or substantially
Polycrystalline, the photoelectric conversion element and the optical sensor
Electron characterized in that the semiconductor thin film is amorphous
apparatus. 5. The electronic device according to claim 3, wherein:
In the above , a plurality of optical sensors are provided, the output signals of all the optical sensors are compared, the minimum value and the average value / standard deviation are obtained, and the minimum value of the detected light is the average value and the standard deviation. Input signal detection method that recognizes the sensor showing the minimum value as the selected sensor when there is only one sensor below the reference expression and using the threshold above
An electronic device characterized by using: 6. The photoelectric conversion device according to claim 1, wherein a part or all of the semiconductor integrated circuit is provided in a region sandwiched between the photoelectric conversion device region and the display device region.
An electronic device, which is provided adjacent to a region and the display element region . 7. The semiconductor thin film according to claim 1, wherein
The logic / arithmetic semiconductor integrated circuit thus formed is
An electronic device, which is provided over a first insulating substrate.