JP2787316B2 - LSI shape simulation method - Google Patents

LSI shape simulation method

Info

Publication number
JP2787316B2
JP2787316B2 JP63189853A JP18985388A JP2787316B2 JP 2787316 B2 JP2787316 B2 JP 2787316B2 JP 63189853 A JP63189853 A JP 63189853A JP 18985388 A JP18985388 A JP 18985388A JP 2787316 B2 JP2787316 B2 JP 2787316B2
Authority
JP
Japan
Prior art keywords
point
shape
processing
points
singular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63189853A
Other languages
Japanese (ja)
Other versions
JPH0239375A (en
Inventor
聰 田沢
誠太郎 松尾
和之 斎藤
彰 吉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP63189853A priority Critical patent/JP2787316B2/en
Publication of JPH0239375A publication Critical patent/JPH0239375A/en
Application granted granted Critical
Publication of JP2787316B2 publication Critical patent/JP2787316B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体LSI素子の加工(エッチング/デポ
ジション)後の断面形状を予測するための形状シミュレ
ーション技術に関するものであり、特に、特異点を含む
形状シミュレーションの精度向上を図ったシミュレーシ
ョン方法に関するものである。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a shape simulation technique for predicting a cross-sectional shape of a semiconductor LSI device after processing (etching / deposition). The present invention relates to a simulation method for improving the accuracy of a shape simulation including the above.

〔従来の技術〕[Conventional technology]

従来のシミュレーションでは、加工面の形状を点を結
ぶ線分で表わし、加工面上の各点は全て、その点の両側
の面がなす傾斜角θとθ(第12図(a)〜(d)参
照)の平均角度を持つ面上の点とみなして扱っていた。
この方法では、滑らかに変化する曲面は問題なく扱える
が、勾配が急峻に変化する点では大きな誤差を生じる可
能性があった。第12図において、Pは勾配が急峻に変化
する点(特異点)、Sは加工面である。
In conventional simulation, the shape of the processed surface expressed by a line segment connecting the points, all the points on the working surface, the inclination angle theta 1 and theta 2 formed by the both side surfaces of the point (Figure 12 (a) ~ (Refer to (d)).
With this method, a smoothly changing curved surface can be handled without any problem, but there is a possibility that a large error may occur at a point where the gradient changes steeply. In FIG. 12, P is a point where the gradient changes steeply (singular point), and S is a machined surface.

θ=90゜、θ=0゜(第12図(a)または(d)
参照)の特異点Pが、方向性のデポジション成分と等方
性のデポジション成分を合わせ持ったあるデポジション
装置でデポジションされた場合の例を第13図および第14
図に示す。第13図が実形状、第14図が従来法によるシミ
ュレーション形状である。第13図および第14図におい
て、S1は初期形状、S2は加工後形状である。
θ 1 = 90 °, θ 2 = 0 ° (FIG. 12 (a) or (d)
FIG. 13 and FIG. 14 show an example of a case where the singular point P is deposited by a deposition apparatus having a combination of a directional deposition component and an isotropic deposition component.
Shown in the figure. FIG. 13 shows the actual shape, and FIG. 14 shows the simulated shape according to the conventional method. 13 and 14, S1 is the initial shape, and S2 is the shape after processing.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

形状シミュレーションでは誤差を途中で補正すること
が基本的に困難なため、僅かな誤差でも蓄積されて行
き、最終的に実際とは全く異なった形状を予測してしま
う可能性がある。そのため、従来のシミュレーション方
法で、特異点を含む形状を高精度に扱うためには、少な
くとも第15図のように点の間隔を細かくとり、点の間隔
が一定間隔以上になった場合には間に点を追加しなが
ら、短い時間ステップでシミュレーションを進める必要
があり、計算時間が大幅に増大するという欠点を有して
いた。第15図において、S3は初期形状、S4は加工後形状
である。
Since it is basically difficult to correct an error in the shape simulation in the middle, even a small error is accumulated, and there is a possibility that a shape completely different from the actual shape is finally predicted. Therefore, in order to handle a shape including a singular point with high accuracy in the conventional simulation method, the interval between points should be made fine at least as shown in FIG. It is necessary to advance the simulation in a short time step while adding points to the above, which has a disadvantage that the calculation time is greatly increased. In FIG. 15, S3 is the initial shape, and S4 is the shape after processing.

本発明はこのような点に鑑みてなされたものであり、
その目的のするところは、特異点を含むLSI断面形状変
化のシミュレーションを、計算時間を増大させることな
く、高精度に実施することにある。
The present invention has been made in view of such a point,
An object of the present invention is to perform a simulation of an LSI cross-sectional shape change including a singular point with high accuracy without increasing calculation time.

〔課題を解決するための手段〕[Means for solving the problem]

このような目的を達成するために本発明は、素子断面
の初期表面形状から加工後形状を予測するLSI形状シミ
ュレーション法において、初期表面を点の集合で近似
し、各々の点はその点を含む両側の直線がなす傾斜角の
間の角度を全て持つものとして扱う第1の方法と、加工
表面上の各点を移動させる際の各点の移動ベクトルの終
点を前記第1の方法で求まる移動後の面上にとる第2の
方法とから成るようにしたものである。
In order to achieve such an object, the present invention provides an LSI shape simulation method for predicting a processed shape from an initial surface shape of an element cross section, in which an initial surface is approximated by a set of points, and each point includes the point. A first method that treats all the angles between the inclination angles formed by the straight lines on both sides, and a movement that determines the end point of the movement vector of each point when moving each point on the processing surface by the first method. And a second method to be taken on the rear surface.

〔作用〕[Action]

本発明によるLSI形状シミュレーション方法において
は、特異点の高精度処理を、特異点を意識することな
く、即ち全ての点で同一の処理をすることにより実現で
きる。
In the LSI shape simulation method according to the present invention, high-precision processing of a singular point can be realized without considering the singular point, that is, by performing the same processing at all points.

〔実施例〕〔Example〕

最初に、特異点における形状変化算出法について述べ
る。傾斜角θの加工表面に垂直方向のその加工表面の移
動速度をv(θ)とすると、特異点はその点の両側の面
がなす傾斜角θとθの間の角度を全て持つ点とみな
すことができるので、t時間後の形状は、傾斜角θ
θの間の角度を持つ全ての表面を面に垂直方向にv
(θ)・tずつ移動してできる面で構成される曲面(当
該特異点の両側の面の移動面そのものと両側の面の間の
角度を有する各移動面が形成する包絡線の組合せで表わ
される曲面)となる。特異点における形状変化算出法で
は、この自然法則を利用し、特異点の両側の面がなす傾
斜角θとθの間の角度を微細な角度Δθでn等分
し、それぞれの角度を持つ面のt時間後の移動位置を計
算してつなぎ合わせることによって、特異点のt時間後
の形状を求めることを特徴とする。第1図は、第12図の
実形状に対応し(θ=90゜、θ=0゜の特異点が、
方向性のデポジション成分と等方性のデポジション成分
を合わせ持ったあるデポジション装置でデポジションさ
れた場合で)、特異点における形状変化算出法を説明す
るための説明図である。これは、移動面が形成する包絡
線が加工後の形状となる場合の一例である。第1図にお
いて、S5は初期形状、S6は加工後形状であり、a〜eは
等分された角度に対応する直線であり、図においては4
等分(n=4)である。また、a′〜e′は直線a〜e
の移動後を示す直線である。
First, a method of calculating a shape change at a singular point will be described. Assuming that the moving speed of the processing surface in the direction perpendicular to the processing surface with the inclination angle θ is v (θ), the singular point is a point having all the angles between the inclination angles θ 1 and θ 2 formed by the surfaces on both sides of the point. Therefore, the shape after time t can be regarded as v in the direction perpendicular to the surface with all surfaces having an angle between the inclination angles θ 1 and θ 2.
(Θ) · A curved surface composed of surfaces that are moved by t (represented by a combination of envelopes formed by the moving surfaces themselves on both sides of the singularity and each moving surface having an angle between both surfaces) Curved surface). The shape change calculation methods in singularity, utilizing this natural laws, n aliquoted angle between the inclination angle theta 1 and theta 2 of which both side faces of the singularity forms a fine angle [Delta] [theta], the respective angle It is characterized in that the shape of the singular point after t time is obtained by calculating and joining the movement positions of the holding surfaces after t time. FIG. 1 corresponds to the actual shape of FIG. 12 (a singular point of θ 1 = 90 ° and θ 2 = 0 °
FIG. 9 is an explanatory diagram for explaining a shape change calculation method at a singular point when a directional deposition component and an isotropic deposition component are combined (deposited by a certain deposition apparatus). This is an example where the envelope formed by the moving surface has a shape after processing. In FIG. 1, S5 is an initial shape, S6 is a shape after processing, and a to e are straight lines corresponding to equally divided angles.
Equally divided (n = 4). A 'to e' are straight lines a to e
Is a straight line indicating after the movement of.

また、第2図は、θ=90゜、θ=0゜の特異点
が、方向性のエッチング成分と等方性のエッチング成分
を合わせ持ったあるエッチング装置でエッチングされた
場合に対する特異点における形状変化算出法を説明する
ための説明図である。これは、加工後の形状が当該特異
点の両側の面の移動面そのものだけで構成される場合の
一例である。第2図において、S7は初期形状、S8は加工
後形状である。
FIG. 2 shows that the singular points of θ 1 = 90 ° and θ 2 = 0 ° are singular points when the singular points are etched by an etching apparatus having a combination of a directional etching component and an isotropic etching component. FIG. 4 is an explanatory diagram for describing a shape change calculation method in FIG. This is an example of a case where the processed shape is constituted only by the moving surfaces themselves on both sides of the singular point. In FIG. 2, S7 is the initial shape, and S8 is the shape after processing.

さらに、第3図および第4図は、θ=0゜、θ
90゜(第12図(a)または(c)参照)の特異点に対す
るデポジションおよびエッチングの例をそれぞれ示した
ものである。第3図および第4図において、S9,S11は初
期形状、S10,S12は加工後形状である。
Further, FIGS. 3 and 4 show that θ 1 = 0 ° and θ 2 =
This shows an example of deposition and etching for a singular point of 90 ° (see FIG. 12 (a) or (c)), respectively. 3 and 4, S9 and S11 are initial shapes, and S10 and S12 are shapes after processing.

このような特異点に対する処理方法は従来のシミュレ
ーションでは全く考えられていなかったものである。な
お、第1図〜第4図では、加工後形状が初期形状そのま
まである場合と初期形状から変化する場合とがあるが、
これについては、後述の加工表面上の各点の移動ベクト
ル算出法において説明する。
A processing method for such a singular point has never been considered in a conventional simulation. In FIGS. 1 to 4, there are a case where the shape after processing is the initial shape as it is and a case where it changes from the initial shape.
This will be described later in a method of calculating a movement vector of each point on the processing surface.

次に、初期表面形状が点の集合で表わされた場合の形
状変化算出法について述べる。通常、形状シミュレーシ
ョンでは、表面形状を点を結ぶ線分で表わす。この場
合、第5図に示すように、勾配変化のない平らな平面上
の点(AとB)以外は、実際には勾配が連続的に変化し
ている滑らかな曲面も、各点で勾配が不連続に変化する
ことになる(点C〜G)。本発明では、これらの点に対
しても、前述した特異点における形状変化算出法に記述
した特異点と同様の扱いをすることを特徴とする。な
お、勾配変化のない平らな平面については、面に垂直方
向にv(θ)・tだけ移動した平面がt時間後の平面と
なるが、この点にも前述した特異点における形状変化算
出法を拡張解釈して適用することができる(その点のも
つ面のなす傾斜角が1つしかないと考えればよい)。第
5図において、S13は実表面形状、S14は点の集合で表現
した表面形状である。
Next, a shape change calculation method when the initial surface shape is represented by a set of points will be described. Usually, in a shape simulation, a surface shape is represented by a line segment connecting points. In this case, as shown in FIG. 5, except for points (A and B) on a flat plane where there is no gradient change, a smooth curved surface whose gradient is actually continuously changed also has a gradient at each point. Changes discontinuously (points C to G). The present invention is characterized in that these points are treated in the same way as the singular points described in the shape change calculation method at the singular points described above. For a flat plane having no gradient change, the plane moved by v (θ) · t in the direction perpendicular to the plane becomes the plane after t time. Can be applied as an extended interpretation (it is sufficient to consider that the surface of the point has only one inclination angle). In FIG. 5, S13 is a real surface shape, and S14 is a surface shape expressed by a set of points.

このように、本方法では、表面上の全ての点を特異点
とみなして統一的に扱うことが可能であるため、特異点
処理の導入によってシミュレータの構成や制御が複雑に
なることは一切起こらない。t時間後の全体形状はこれ
らの面をつなぎ合わせることによって求める。第6図は
本方法を説明するための説明図である。なお、本方法
(前述した特異点における形状変化算出法も同様)は、
シミュレーションを行なう加工表面上の全ての点の移動
速度v(θ)が見込み角(その点を通る水平線より上の
180度の角度内で、遮る物質が存在しない角度)に無関
係に決まる場合(例えば等方性のエッチングやデポジシ
ョンの場合)は、時間tの長さには無関係に適用でき
る。第6図において、S15は初期形状、S16は加工後形状
である。
As described above, in this method, all points on the surface can be regarded as singular points and treated in a unified manner, and the introduction of singular point processing does not complicate the configuration or control of the simulator at all. Absent. The overall shape after the time t is obtained by connecting these surfaces. FIG. 6 is an explanatory diagram for explaining the present method. Note that this method (the same applies to the shape change calculation method at the singular point described above)
The moving speed v (θ) of all points on the processing surface to be simulated is the expected angle (above the horizontal line passing through that point).
In the case of an angle of 180 degrees, an angle which is independent of an obstructing substance (in the case of isotropic etching or deposition) is applicable regardless of the length of the time t. In FIG. 6, S15 is the initial shape, and S16 is the shape after processing.

次に、加工表面上の各点の移動ベクトル算出法につい
て述べる。見込み角に依存してv(θ)が変化する点が
含まれる場合は、形状の時間的変化に伴って各点におけ
るv(θ)が変化していく可能性があるため、本発明を
用いる場合も、従来のシミュレーション法と同様、全加
工処理時間を微小な時間に分けて少しずつ形状を変化さ
せていく(微小時間後の形状を次の初期形状としてシミ
ュレーションを繰り返す)必要が生じる。この場合、従
来法と同じように初期形状を表わす点の集合を少しずつ
移動させていく(点ごとに移動ベクトルを計算して移動
させる)方法をとるのが便利である。本発明では、この
際に、加工表面上の全ての点について、前述の初期表面
形状が点の集合で表わされた場合形状変化算出法で求ま
る加工後の面上に移動ベクトルの終点(即ち移動先)を
とることによって、加工後の形状を高精度に表現するこ
とを特徴とする。以下に、上記の加工の面上に移動ベク
トルの終点をとるための1手法を示す。
Next, a method of calculating a movement vector of each point on the processing surface will be described. When a point at which v (θ) changes depending on the estimated angle is included, the present invention is used because v (θ) at each point may change with the temporal change of the shape. Also in this case, as in the conventional simulation method, it is necessary to divide the entire processing time into minute times and change the shape little by little (repeat the simulation with the shape after the minute time as the next initial shape). In this case, it is convenient to adopt a method of gradually moving a set of points representing the initial shape (calculating and moving a movement vector for each point) as in the conventional method. In the present invention, at this time, for all points on the processing surface, the end point of the movement vector (that is, the end point of the movement vector on the surface after processing obtained by the shape change calculation method when the above-described initial surface shape is represented by a set of points) By taking the (destination), the shape after processing is represented with high accuracy. Hereinafter, one method for obtaining the end point of the movement vector on the above-described processing surface will be described.

加工表面上の各点について、第7図〜第10図に示すよ
うに、まず、当該点Pの両側の面がなす角度が劣角とな
っている側に点Qをとる。点Qは、例えば第7図〜第10
図のように点Pの両側の面がなす角度の2等分線Lを引
き、この2等分線L上に点Pからの距離が単位時間ステ
ップにおける最大移動距離より長くなるようにとれば処
理が簡単であるが、点Qの決め方は特にこの限りでな
い。次に点Pの両側の面の移動後の位置を求め、移動後
の両面の交点Rを求める。その後、傾斜角θとθ
間の角度を持つ全ての面(計算上はθとθの間の角
度を微細な角度Δθでn等分)の移動後の位置を求め、
移動後の各面が直線QRとなす交点の内、点Qに最も近い
点Sをその点の移動ベクトルの終点(即ち移動先)とす
る(PSが移動ベクトルとなる)。なお、第7図と第8図
はデポジション、第9図と第10図はエッチングの場合を
示しており、S17は初期形状、S18は加工後形状である。
For each point on the processing surface, as shown in FIGS. 7 to 10, first, a point Q is set on the side where the angle between both sides of the point P is an inferior angle. The point Q is, for example, as shown in FIGS.
As shown in the figure, a bisector L of an angle formed by both sides of the point P is drawn, and the distance from the point P on the bisector L is set to be longer than the maximum movement distance in the unit time step. Although the processing is simple, the method of determining the point Q is not limited to this. Next, the post-movement positions of the surfaces on both sides of the point P are obtained, and the intersection R of both surfaces after the movement is obtained. Then, the position after movement of all surfaces having an angle between the inclination angles θ 1 and θ 2 (calculation is performed by equally dividing the angle between θ 1 and θ 2 by n at a fine angle Δθ) is obtained.
A point S closest to the point Q is an end point (ie, a movement destination) of the movement vector of the point, of the intersections formed by the surfaces after the movement and forming a straight line QR (PS is a movement vector). 7 and 8 show the case of deposition, and FIGS. 9 and 10 show the case of etching. S17 is the initial shape, and S18 is the shape after processing.

θとθが等しい場合(平らな面上の点の場合)
は、点Pの両側の面の移動後の交点を求めることができ
ない。この場合、単純に、点Pを面に垂直方向にv(θ
)・t移動させても良いが、点Pをθ(=θ)の
傾斜が保存される方向へ移動させる方が好ましい。
If theta 1 and theta 2 are equal (the case of a point on the flat surface)
Cannot find the intersection after the movement of both sides of the point P. In this case, the point P is simply set as v (θ
1 ) · t may be moved, but it is preferable to move the point P in a direction in which the inclination of θ 1 (= θ 2 ) is preserved.

特にθとθの差が大きい点(実際の特異点と考え
られる)の移動後の形状近似精度をさらに上げたい場合
は、移動先の点数を増加させればよい。例えば、第11図
のように、点Pの両側のそれぞれの面に垂直に引いた直
線がそれぞれの面の移動後の面と交わる点をT、Uと
し、傾斜角θとθの間の角度を持つ全ての面の移動
後の各面が、線分QTとなす交点のうち点Qに最も近い点
(この場合は点Tになる)および線分QUとなす交点のう
ち点Qに最も近い点(この場合は点Uになる)を加工後
の表面を表わす点に加える処理を行なえば、精度を上げ
ることができる。さらに精度を上げたければ、ST間、SU
間にさらに点をとり同様の処理を行なえばよい。なお、
この図はデポジションの例であるが、エッチングの場合
も同様である。
In particular, if it is desired to further increase the shape approximation accuracy after the movement of a point having a large difference between θ 1 and θ 2 (which is considered to be an actual singular point), the number of points at the movement destination may be increased. For example, as shown in FIG. 11, the points at which the straight lines drawn perpendicular to the respective surfaces on both sides of the point P intersect with the surfaces after the movement of the respective surfaces are defined as T and U, and between the inclination angles θ 1 and θ 2 . After the movement of all the surfaces having the angles of, each of the intersections between the line QT and the point closest to the point Q (in this case, the point T) and the point Q among the intersections with the line QU Accuracy can be improved by performing processing of adding the closest point (in this case, point U) to a point representing the processed surface. If you want to further improve accuracy, between ST, SU
A similar process may be performed with more points taken in between. In addition,
Although this drawing is an example of deposition, the same applies to etching.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明によるLSI形状シミュレー
ション法は、初期表面を点の集合で近似し、各々の点は
その点を含む両側の直線がなす傾斜角の間の角度を全て
持つものとして扱う第1の方法と、加工表面上の各点を
移動させる際の各点の移動ベクトルの終点を第1の方法
で求まる移動後の面上にとる第2の方法とから構成され
ることにより、これまでのシミュレーションでは全く考
慮されていなかった特異点の高精度処理を特異点を意識
することなく、即ち全ての点で同一の処理をすることに
より実現できるので、シミュレータの構成や制御を複雑
にすることなく、高精度なシミュレータを作ることがで
きる効果がある。
As described above, the LSI shape simulation method according to the present invention approximates the initial surface with a set of points, and treats each point as having all angles between the inclination angles formed by straight lines on both sides including the point. 1 and a second method in which the end point of the movement vector of each point when moving each point on the processing surface is obtained on the surface after movement obtained by the first method. High-precision processing of singular points, which was not considered at all in simulations up to this point, can be realized without being aware of singular points, that is, by performing the same processing at all points, complicating the configuration and control of the simulator Without this, there is an effect that a highly accurate simulator can be made.

また、本発明による方法では、従来のシミュレーショ
ン法を使用する場合のように特異点を高精度に扱うため
に時間ステップを細かくとる必要が無くなるため、シミ
ュレーション時間を短縮することができる効果がある。
Further, the method according to the present invention eliminates the necessity of taking a time step finely in order to treat a singular point with high accuracy unlike the case of using the conventional simulation method, so that there is an effect that the simulation time can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

第1図〜第4図は特異点における形状変化算出法を説明
するための説明図、第5図および第6図は初期表面形状
が点の集合で表わされた場合の形状変化算出法を説明す
るための説明図、第7図〜第11図は加工表面上の各点の
移動ベクトル算出法を説明するための説明図、第12図は
加工表面上の各点および各点の両側の面がなす傾斜角を
示す説明図、第13図〜第15図は従来のシミュレーション
法による加工後形状を示す説明図である。 S5,S7,S9,S11……初期形状、S6,S8,S10,S12……加工後
形状。
1 to 4 are explanatory diagrams for explaining a shape change calculation method at a singular point. FIGS. 5 and 6 show a shape change calculation method when an initial surface shape is represented by a set of points. 7 to 11 are explanatory diagrams for explaining a method of calculating a movement vector of each point on the processing surface, and FIG. 12 is each point on the processing surface and both sides of each point. FIG. 13 to FIG. 15 are explanatory views showing an inclination angle formed by a surface, and FIG. 13 to FIG. 15 are views showing shapes after processing by a conventional simulation method. S5, S7, S9, S11 ... initial shape, S6, S8, S10, S12 ... shape after processing.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉井 彰 東京都千代田区内幸町1丁目1番6号 日本電信電話株式会社内 (58)調査した分野(Int.Cl.6,DB名) H01L 21/302──────────────────────────────────────────────────続 き Continued on the front page (72) Akira Yoshii, Inventor Nippon Telegraph and Telephone Corporation, 1-6, Uchisaiwaicho, Chiyoda-ku, Tokyo (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21 / 302

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】素子断面の初期表面形状から加工後形状を
予測するLSI形状シミュレーション法において、前記初
期表面を点の集合で近似し、各々の点はその点を含む両
側の直線がなす傾斜角の間の角度を全て持つものとして
扱う第1の方法と、加工表面上の各点を移動させる際の
各点の移動ベクトルの終点を前記第1の方法で求まる移
動後の面上にとる第2の方法とから成るLSI形状シミュ
レーション方法。
In an LSI shape simulation method for predicting a shape after processing from an initial surface shape of an element cross section, the initial surface is approximated by a set of points, and each point is an inclination angle formed by straight lines on both sides including the point. And a second method in which the end point of the movement vector of each point when each point on the processing surface is moved is determined on the surface after movement obtained by the first method. An LSI shape simulation method comprising:
JP63189853A 1988-07-29 1988-07-29 LSI shape simulation method Expired - Fee Related JP2787316B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63189853A JP2787316B2 (en) 1988-07-29 1988-07-29 LSI shape simulation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63189853A JP2787316B2 (en) 1988-07-29 1988-07-29 LSI shape simulation method

Publications (2)

Publication Number Publication Date
JPH0239375A JPH0239375A (en) 1990-02-08
JP2787316B2 true JP2787316B2 (en) 1998-08-13

Family

ID=16248279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63189853A Expired - Fee Related JP2787316B2 (en) 1988-07-29 1988-07-29 LSI shape simulation method

Country Status (1)

Country Link
JP (1) JP2787316B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06301984A (en) 1993-04-12 1994-10-28 Olympus Optical Co Ltd Optical information recording and/or reproducing apparatus

Also Published As

Publication number Publication date
JPH0239375A (en) 1990-02-08

Similar Documents

Publication Publication Date Title
Kennel et al. MHD intermediate shock discontinuities. Part 1. Rankine—Hugoniot conditions
US11650077B2 (en) Strict reverse navigation method for optimal estimation of fine alignment
JP2787316B2 (en) LSI shape simulation method
US5293557A (en) Method of describing a surface of an object after processing
CN113882677A (en) Track control method and system for concrete 3D printing
Siddiqi et al. A Hamiltonian approach to the eikonal equation
Thurgate Segment-based etch algorithm and modeling
CN105005315A (en) Short-distance spacecraft coplanar elliptical formation phase control method
JP2888240B1 (en) Sputter shape simulation method
JPS631034A (en) Simulation method
JPS62107386A (en) Image matching method
Ikeda Singular perturbation approach to stability properties of traveling wave solutions of reaction-diffusion systems
JP2787315B2 (en) LSI shape simulation method
JEFFREYS What is Hamilton's principle?
US5386374A (en) Method for simulating the surface contours of a layer material to be formed over a base structure
JP2546891B2 (en) Shape simulation method
Das et al. FPGA implementation of Angle Generator for CORDIC Based High pass FIR Filter Design
JP3950488B2 (en) Under-etching correction method and under-etching correction mask
Zhu et al. An efficient PC-based preferential-etch simulator using dynamic cellular automata method
Bunimovich Dynamical systems of hyperbolic type with singularities
Zheng et al. Road-Map Assisted Adaptive Constant Turn Model
JPH10212577A (en) Sputtering shape simulation method
JPH06176997A (en) Shape simulation method
Jacobson et al. Fabrication of sharp field emission structures using ion beam milling
Cherfils A parallel and adaptive continuation method for semilinear bifurcation problems

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees