JP2786262B2 - Thermal recording head - Google Patents
Thermal recording headInfo
- Publication number
- JP2786262B2 JP2786262B2 JP1181884A JP18188489A JP2786262B2 JP 2786262 B2 JP2786262 B2 JP 2786262B2 JP 1181884 A JP1181884 A JP 1181884A JP 18188489 A JP18188489 A JP 18188489A JP 2786262 B2 JP2786262 B2 JP 2786262B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording head
- surface layer
- silicon
- thermal recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は保護膜を有する感熱記録ヘッドに係り、特
に、感熱記録ヘッドの保護の構造に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermal recording head having a protective film, and more particularly to a structure for protecting a thermal recording head.
感熱記録ヘッドは、ファクシミリ、ラベル・プリン
タ、ビデオプリンタ等の画像出力装置に多く使用されて
いる。Thermal recording heads are widely used in image output devices such as facsimile machines, label printers, and video printers.
従来、薄膜感熱記録ヘッドは第３図に示す如くアルミ
ナ基板１上に例えばホウ素を添加した多結晶シリコンか
ら成る発熱抵抗体２と、例えばタングステンから成る金
属電極３、３′を設け、最上層として感熱紙との摺動に
よる発熱抵抗体２等の摩耗・破損を防止するため保護膜
５が設けられている。Conventionally, a thin-film thermal recording head is provided with a heating resistor 2 made of, for example, boron-doped polycrystalline silicon and metal electrodes 3, 3 'made of, for example, tungsten on an alumina substrate 1 as shown in FIG. A protective film 5 is provided to prevent abrasion and breakage of the heating resistor 2 and the like due to sliding with the thermal paper.
感熱記録ヘッドの金属電極３、３′間に通電すると、
発熱抵抗体２が発熱し、この熱が耐摩耗性の保護膜５を
介して感熱紙上に伝わり、感熱記録を行う。When electricity is supplied between the metal electrodes 3 and 3 'of the thermal recording head,
The heating resistor 2 generates heat, and this heat is transmitted to the thermal paper via the wear-resistant protective film 5 to perform thermal recording.
このような感熱記録ヘッドの保護膜としては、高い硬
度を有し、耐摩耗性、耐熱性に優れ、更に感熱紙との長
期間にわたる摺動、発熱に対して十分にその機能を発揮
出来るものが求められる。As a protective film for such a thermal recording head, it has high hardness, excellent wear resistance and heat resistance, and can sufficiently exhibit its function against long-term sliding with a thermal paper and heat generation. Is required.
これらの条件を満たすものとして、従来酸化タンタル
層、炭化シリコン層、シリコンオキシナイトライド（Si
−Ｏ−Ｎ）層を用いるもの（例えば特開昭58−118273号
公報参照）やホウ素（Ｂ）、リン（Ｐ）、シリコン（S
i）系組成物から成る薄膜を用いるもの（例えば特開昭6
1−91901号公報参照）等がある。Conventionally, tantalum oxide layer, silicon carbide layer, silicon oxynitride (Si
-ON) layer (for example, see JP-A-58-118273), boron (B), phosphorus (P), silicon (S
i) using a thin film composed of a system composition (for example,
1-91901).
ところが、上記の保護膜は一層構造である。そうして
このような感熱記録ヘッドを用いる画像出力装置のうち
でも、ラベル・プリンタは特に耐摩耗性が要求されてお
り、ビッカーズ硬度の大きいものが要求される。However, the above protective film has a single-layer structure. Thus, among image output apparatuses using such a thermal recording head, a label printer is particularly required to have abrasion resistance, and a label printer having a high Vickers hardness is required.
一般にビッカーズ硬度を大きくすると内部応力も大き
くなり、保護膜内に亀裂を生じたり、下地の機能素子を
有する基板との間にハガレが生じ易くなるという問題点
がある。In general, when the Vickers hardness is increased, the internal stress also increases, and there is a problem that cracks are generated in the protective film and peeling is likely to occur between the protective film and the substrate having the functional element.
これは、発熱体層のパルス性通電による熱衝撃に対し
て、耐クラック性の高い保護膜であるＢ−Ｐ−Si系組成
物から成る薄膜においても例外ではない。This is not an exception in the case of a thin film made of a BP-Si-based composition, which is a protective film having high crack resistance against thermal shock due to pulsed conduction of the heating element layer.
従って本発明の目的は感熱記録ヘッド等の電子装置に
用いる保護膜として、耐摩耗性が優れ、内部応力が小さ
く下地基板とハガレが生じにくい保護膜を提供するもの
である。Accordingly, an object of the present invention is to provide a protective film having excellent abrasion resistance, low internal stress, and hardly causing peeling with an underlying substrate, as a protective film used for an electronic device such as a thermal recording head.
このため、本発明者等は鋭意研究の結果、基板と、こ
の基板上に設けられた発熱抵抗体と、この発熱抵抗体上
に設けられた保護層を有する感熱記録ヘッドにおいて、
保護層を表面層と、この表面層とは同一材料ではあるが
組成比の異なる下側層を具備するように形成するととも
に、前記表面層はシリコンが10〜32％、ボロンが55〜75
％、リンが５〜15％の組成から成り、引張応力を有する
シリコン−ボロン−リン系組成物により形成し、下側層
はシリコンが32〜40％、ボロンが45〜60％、リンが５〜
15％の組成から成り、前記表面層とは同一材料ではある
が異なる組成比の圧縮応力を有するシリコン−ボロン−
リン系組成物により形成し、保護層を、前記表面層の内
部応力を前記下側層の内部応力により打ち消すように構
成することにより前記目的が達成できることを見出し
た。For this reason, the present inventors as a result of earnest research, as a result of a substrate, a heating resistor provided on the substrate, and a thermal recording head having a protective layer provided on the heating resistor,
The protective layer is formed so as to include a surface layer and a lower layer made of the same material as the surface layer but having a different composition ratio, and the surface layer has 10 to 32% of silicon and 55 to 75% of boron.
%, Phosphorus is 5 to 15%, and is formed of a silicon-boron-phosphorus composition having a tensile stress. The lower layer is 32 to 40% silicon, 45 to 60% boron, and 5 to 5% phosphorus. ~
The surface layer is made of silicon-boron- having the same material as the surface layer but having a compressive stress having a different composition ratio.
It has been found that the object can be achieved by forming the protective layer from a phosphorus-based composition so that the internal stress of the surface layer is canceled by the internal stress of the lower layer.
本発明では感熱記録ヘッドをこのような構成にするこ
とにより、保護層の表面層は硬度が大きく耐摩耗性の大
きい膜で形成するとともに、下側層には、表面層内に発
生する引張応力を相殺する圧縮応力を発生させて、保護
層内の内部応力のために亀裂を生じたり、下地基板との
間にハガレが生じることのないすぐれた特性を持つ、同
一材料で構成され異なる組成比の表面層と下側層で形成
された感熱記録ヘッドを提供することができる。In the present invention, by adopting such a structure of the thermal recording head, the surface layer of the protective layer is formed of a film having high hardness and high wear resistance, and the lower layer has a tensile stress generated in the surface layer. Different composition ratios made of the same material with excellent characteristics that do not generate cracks due to internal stress in the protective layer by generating compressive stress that offsets And a thermal recording head formed of the surface layer and the lower layer.
本発明の実施例を第１図及び第２図によって詳細に説
明する。An embodiment of the present invention will be described in detail with reference to FIGS.
第１図は本発明の一実施例である感熱記録ヘッドの構
造図、第２図（ａ）は保護膜のシリコン−ホウ素−リン
系組成物の組成比と内部応力（曲線Ａ）とビッカーズ硬
度（曲線Ｂ）の関係を示す特性図、第２図（ｂ）は保護
膜の組成比と摩耗量の関係を示す特性図である。FIG. 1 is a structural diagram of a thermal recording head according to one embodiment of the present invention, and FIG. 2 (a) is a composition ratio of a silicon-boron-phosphorus composition of a protective film, internal stress (curve A), and Vickers hardness. FIG. 2 (b) is a characteristic diagram showing the relationship between the composition ratio of the protective film and the amount of wear.
第１図において、１は例えばアルミナから成る基板、
２は発熱抵抗体であって、例えばホウ素をドープした多
結晶シリコンから成り、その厚さは約3000Åである。In FIG. 1, 1 is a substrate made of, for example, alumina,
A heating resistor 2 is made of, for example, boron-doped polycrystalline silicon and has a thickness of about 3000 °.
３、３′は金属電極であって、例えば膜厚200Åのア
ルミニウム膜とその上に形成されたタングステン膜で構
成され、その厚さは約１μｍである。４は本発明の保護
膜であって、シリコンが35％、ボロンが50％、リンが15
％の組成から成る下側層４−１とシリコンが20％、ボロ
ンが67％、リンが13％から成る表面層４−２との２層構
造であって、その厚さは全体で約８μｍである。Reference numerals 3 and 3 'denote metal electrodes, which are composed of, for example, an aluminum film having a thickness of 200.degree. And a tungsten film formed thereon, and have a thickness of about 1 .mu.m. 4 is a protective film of the present invention, comprising 35% of silicon, 50% of boron, and 15% of phosphorus.
% Of the lower layer 4-1 having a composition of 20%, a surface layer 4-2 of 20% of silicon, 67% of boron and 13% of phosphorus, and has a total thickness of about 8 μm. It is.
このような本発明の保護層は、通常の方法でアルミナ
等の基板１上に形成した発熱抵抗体２、金属電極３、
３′から成る発熱素子表面に常圧CVD法を用いて成膜す
る。Such a protective layer of the present invention includes a heating resistor 2, a metal electrode 3, and a heating resistor 2 formed on a substrate 1 made of alumina or the like by an ordinary method.
A film is formed on the surface of the heating element made of 3 'by using a normal pressure CVD method.
即ち、大気中でヘリウムガス（He）等をキャリアガス
として用い揮発性物質として、ジボロン（B2H6）、三塩
化ホウ（BCl3）等をホウ素ソースとし、ホスフィン（PH
3）、三塩化リン（PCl3）等をリンソースとし、シラン
（SiH4）、四塩化ケイ素（SiCl4）等をケイ素ソースと
して、所定の薄膜組成に応じて、流量比を決定して、一
般に400〜1300℃の反応炉中で成膜する。That is, helium gas (He) or the like is used as a carrier gas in the atmosphere, and diboron (B 2 H 6 ), borane trichloride (BCl 3 ) or the like is used as a boron source and phosphine (PH)
3 ) Using phosphorus trichloride (PCl 3 ) or the like as a phosphorus source, silane (SiH 4 ), silicon tetrachloride (SiCl 4 ) or the like as a silicon source, and determining a flow ratio according to a predetermined thin film composition, Generally, the film is formed in a reaction furnace at 400 to 1300 ° C.
本実施例では、まず大気圧下でHeをキャリアガスとし
て用い、H2:60SLM、５％B2H6/He:4.13SLM、20％SiH4/H
e:4.64SLM、25％PH3/He:0.78SLMの条件で700℃10分間成
膜する。これにより、Si:35％、B:50％、P:15％の組成
で膜厚約４μｍの下側層４−１が形成される。この第１
層４−１の内部応力は約２×109dyn/cm2であった。In this embodiment, first, He is used as a carrier gas under atmospheric pressure, H 2 : 60 SLM, 5% B 2 H 6 /He:4.13 SLM, 20% SiH 4 / H
e: Deposit a film at 700 ° C. for 10 minutes under conditions of 4.64 SLM and 25% PH 3 / He: 0.78 SLM. Thus, the lower layer 4-1 having a composition of Si: 35%, B: 50%, and P: 15% is formed to a thickness of about 4 μm. This first
The internal stress of the layer 4-1 was about 2 × 10 9 dyn / cm 2 .
次の同じ条件でシラン流量を変えて表面層４−２を成
膜する。即ち、H2:60SLM、５％B2H6/He:4.13SLM、20％S
iH4/He:3SLM、25％PH3/He:0.78SLMの条件で700℃15分間
のCVD法で成膜する。これによりSi:20％、B:67％、P:13
％の組成で膜厚約４μｍの表面層４−２が形成される。
この表面層の内部応力は約−2.5×109dyn/cm2であっ
た。The surface layer 4-2 is formed by changing the silane flow rate under the same conditions as described below. That is, H 2 : 60 SLM, 5% B 2 H 6 / He: 4.13 SLM, 20% S
A film is formed by a CVD method at 700 ° C. for 15 minutes under the conditions of iH 4 / He: 3SLM and 25% PH 3 /He:0.78 SLM. As a result, Si: 20%, B: 67%, P: 13
%, A surface layer 4-2 having a thickness of about 4 μm is formed.
The internal stress of this surface layer was about −2.5 × 10 9 dyn / cm 2 .
このように形成した２層構造の保護膜４は下側層４−
１の内部応力と表面層４−２の内部応力とが相殺され
る。The protective film 4 having a two-layer structure formed in this manner is a lower layer 4-
1 and the internal stress of the surface layer 4-2 are canceled.
更に、この保護膜４を有する感熱記録ヘッドを100km
の走行試験を行ったところ、摩耗量は0.015〜0.025μm/
kmでハガレは生じなかった。Further, the thermal recording head having the protective film 4 is moved for 100 km.
When a running test was performed, the wear amount was 0.015 to 0.025 μm /
There was no peeling at km.
第２図（ａ）（ｂ）には保護膜のＢ、Ｐ、Siの組成比
と内部応力、ビッカーズ硬度、摩耗量の関係が示されて
いる。2 (a) and 2 (b) show the relationship between the composition ratio of B, P, and Si of the protective film and the internal stress, Vickers hardness, and the amount of wear.
これによれば下側層４−１としてはSi:32〜40％、B:4
5〜65％、P:5〜15％の範囲の組成のものが適当である。
これは、Siが32％以下ではSi/B比が小さくなりすぎ、内
部応力がマイナス（−）側（即ち引張応力）で大きくな
りすぎる。また、Siが40％以上ではSi/B比が大きくなり
すぎ、内部応力がプラス（＋）側（即ち圧縮応力）で大
きくなりすぎる（第２図（ａ）曲線Ａ参照）。According to this, as the lower layer 4-1, Si: 32 to 40%, B: 4
A composition in the range of 5 to 65%, P: 5 to 15% is suitable.
This is because when the Si content is 32% or less, the Si / B ratio becomes too small, and the internal stress becomes too large on the minus (-) side (that is, the tensile stress). On the other hand, if Si is 40% or more, the Si / B ratio becomes too large, and the internal stress becomes too large on the plus (+) side (that is, the compressive stress) (see curve A in FIG. 2 (a)).
Ｂについても同様に、45％以下ではSi/B比が大きくな
りすぎて、内部応力が＋側で大きくなりすぎ、65％以上
ではSi/B比が小さくなりすぎ、内部応力が−側で大きく
なりすぎてしまう（第２図（ａ）曲線Ａ参照）。Similarly, for B, if it is 45% or less, the Si / B ratio becomes too large, and the internal stress becomes too large on the positive side. If it is 65% or more, the Si / B ratio becomes too small, and the internal stress becomes large on the negative side. It becomes too much (see curve A in FIG. 2 (a)).
また表面層４−２としてはSi:10〜32％、B:55〜75
％、P:5〜15％の範囲の組成のものが適当である。As the surface layer 4-2, Si: 10 to 32%, B: 55 to 75%
%, P: those having a composition in the range of 5 to 15% are suitable.
これは、Siが10％以下ではSi/B比が小さくなりすぎ、
内部応力が−側で大きくなりすぎる。またSiが32％以上
ではSi/B比が大きくなりすぎ、内部応力が＋側で大きく
なりすぎる（第２図（ａ）曲線Ａ参照）。This is because if Si is less than 10%, the Si / B ratio becomes too small,
Internal stress becomes too large on the negative side. If the Si content is 32% or more, the Si / B ratio becomes too large, and the internal stress becomes too large on the + side (see curve A in FIG. 2 (a)).
更にビッカーズ硬度が低下し（第２図（ａ）曲線Ｂ参
照）、摩耗量も大きくなる（第２図（ｂ）参照）。Further, the Vickers hardness decreases (see the curve B in FIG. 2 (a)), and the wear amount also increases (see FIG. 2 (b)).
Ｂが60％以下でも同様にSi/B比が大きくなり、内部応
力が＋側で大きくなりすぎ（第２図（ａ）曲線Ａ参
照）、ビッカーズ硬度は低下し（第２図（ａ）曲線Ｂ参
照）摩耗量も大きくなる（第２図（ｂ）参照）。またＢ
が75％以上ではSi/B比が小さくなりすぎ、内部応力が−
側で大きくなりすぎ（第２図（ａ）曲線Ａ参照）、さら
にビッカーズ硬度は低下し（第２図（ａ）曲線Ｂ参
照）、摩耗量も増加する（第２図（ｂ）参照）。Even when B is 60% or less, the Si / B ratio similarly increases, and the internal stress becomes too large on the + side (see curve A in FIG. 2 (a)), and the Vickers hardness decreases (curve in FIG. 2 (a)). B) The amount of wear also increases (see FIG. 2 (b)). Also B
Is over 75%, the Si / B ratio becomes too small and the internal stress
On the side, too large (see the curve A in FIG. 2 (a)), the Vickers hardness decreases (see the curve B in FIG. 2 (a)), and the amount of wear also increases (see FIG. 2 (b)).
Ｐについては、常圧CVD法で薄膜を形成する場合、Ｂ
−Ｐ−Si系組成物では、５％以下や15％以上ではその製
造が困難である。As for P, when a thin film is formed by the atmospheric pressure CVD method, B
With a -P-Si-based composition, if it is 5% or less or 15% or more, its production is difficult.
すぐれた耐摩耗特性を有する前記表面層を開発したも
のの、これを保護層として使用してもその内部応力のた
め抵抗体表面からはがれ易くて使用困難であったもの
を、本発明ではこの表面層を構成する材料と同一材料を
用い、その組成比を変えることにより表面層とは逆の内
部応力を持つ下側層を開発することにより、前記表面層
の特性を有効に活用することが可能となった。Although the surface layer having excellent abrasion resistance has been developed, even if the surface layer is used as a protective layer, it is easily peeled off from the surface of the resistor due to its internal stress. By using the same material as the material constituting, and by developing a lower layer having an internal stress opposite to that of the surface layer by changing the composition ratio, it is possible to effectively utilize the characteristics of the surface layer. became.
本発明の如き、同一材料を用いその組成比を変えるこ
とにより形成した２層構造を有する保護膜を用いること
によって、ビッカーズ硬度の大きい耐摩耗性の優れた膜
を表面層とし、表面層の内部応力と反対の内部応力を持
つ膜を下側層とすることにより、２層間の内部応力を相
殺して小さくすることができるため、保護膜内に亀裂が
生じたり、下側の機能部との間にハガレが生じたりする
ことのない、しかもビッカーズ硬度の大きい耐摩耗性の
優れた保護膜が得られる。By using a protective film having a two-layer structure formed by changing the composition ratio of the same material as in the present invention, a film having high Vickers hardness and excellent wear resistance is used as a surface layer, and the inside of the surface layer is formed. By using a film having an internal stress opposite to the stress as the lower layer, the internal stress between the two layers can be offset and reduced, so that a crack is generated in the protective film or the lower functional portion is It is possible to obtain a protective film having a high Vickers hardness and excellent abrasion resistance, in which no peeling occurs between them.
さらにこのような同一材料を用いてその組成比を変え
ることにより形成した２層構造の保護膜を常圧CVD法の
シラン流量を変えるだけの簡単な方法によって形成する
ことができる。Further, such a protective film having a two-layer structure formed by changing the composition ratio of the same material can be formed by a simple method of changing the silane flow rate in the normal pressure CVD method.
第１図は本発明の一実施例の構成図、 第２図は本発明の保護膜の特性説明図、 第３図は従来例の構成図である。 １……基板、２……発熱抵抗体、 ３……金属電極、４……保護膜。 FIG. 1 is a configuration diagram of one embodiment of the present invention, FIG. 2 is a diagram illustrating the characteristics of a protective film of the present invention, and FIG. 3 is a configuration diagram of a conventional example. DESCRIPTION OF SYMBOLS 1 ... board | substrate, 2 ... heating resistor, 3 ... metal electrode, 4 ... protective film.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) B41J 2/335──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) B41J 2/335
Claims (1)
体と、 この発熱抵抗体上に設けられた保護層を有する感熱記録
ヘッドにおいて、 保護層を表面層と、この表面層とは同一材料ではあるが
組成比の異なる下側層を具備するように形成するととも
に、 前記表面層はシリコンが10〜32％、ボロンが55〜75％、
リンが５〜15％の組成から成り、引張応力を有するシリ
コン−ボロン−リン系組成物により形成し、下側層はシ
リコンが32〜40％、ボロンが45〜60％、リンが５〜15％
の組成から成り、前記表面層とは同一材料ではあるが異
なる組成比の圧縮応力を有するシリコン−ボロン−リン
系組成物により形成し、 保護層を、前記表面層の内部応力を前記下側層の内部応
力により打ち消すように構成したことを特徴とする感熱
記録ヘッド。1. A thermal recording head having a substrate, a heating resistor provided on the substrate, and a protection layer provided on the heating resistor, wherein the protection layer is a surface layer, and the surface layer is The same material is formed so as to have a lower layer having a different composition ratio, and the surface layer is made of 10 to 32% of silicon, 55 to 75% of boron,
The lower layer is composed of a silicon-boron-phosphorus composition having a tensile stress of 5 to 15% and having a tensile stress, and the lower layer is composed of 32 to 40% of silicon, 45 to 60% of boron, and 5 to 15% of phosphorus. %
And a protective layer formed of a silicon-boron-phosphorus-based composition having the same material as the surface layer but having a different compositional compressive stress. A thermal recording head characterized in that it is canceled by internal stress of the recording head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1181884A JP2786262B2 (en) | 1989-07-14 | 1989-07-14 | Thermal recording head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1181884A JP2786262B2 (en) | 1989-07-14 | 1989-07-14 | Thermal recording head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0347759A JPH0347759A (en) | 1991-02-28 |
| JP2786262B2 true JP2786262B2 (en) | 1998-08-13 |
Family
ID=16108559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1181884A Expired - Lifetime JP2786262B2 (en) | 1989-07-14 | 1989-07-14 | Thermal recording head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2786262B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5539383A (en) * | 1978-09-14 | 1980-03-19 | Toshiba Corp | Thermal head |
| JPS5582678A (en) * | 1978-12-19 | 1980-06-21 | Toshiba Corp | Thermal head |
| JPS5630876A (en) * | 1979-08-21 | 1981-03-28 | Toshiba Corp | Thermal head |
| JPS62160249A (en) * | 1986-01-08 | 1987-07-16 | Alps Electric Co Ltd | Thermal head |
-
1989
- 1989-07-14 JP JP1181884A patent/JP2786262B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0347759A (en) | 1991-02-28 |
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