JP2773934B2 - Semiconductor wafer deposition system - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a wafer film forming apparatus for forming a predetermined reactive thin film on a semiconductor wafer, and in particular, to a metalorganic thermal decomposition vapor deposition method, so-called MOCVD method. The present invention relates to a semiconductor wafer film forming apparatus for performing a so-called epitaxial growth of group III and group V compound semiconductor thin films on a semiconductor wafer.

(Prior art) The MOCVD method is a method in which a semiconductor wafer heated to about 800 ° C. is placed in a reaction vessel depressurized to atmospheric pressure or about 100 Torr, and a plurality of source gases, That is, by supplying a reaction gas, a compound semiconductor thin film is vapor-phase grown, that is, epitaxially grown on a semiconductor wafer to obtain an epitaxial wafer,
The epitaxial wafer obtained by this MOCVD method,
In recent years, attention has been focused on optical devices and high-speed electronic devices, and various applications are being considered. The thickness and composition of the compound semiconductor thin film described above must be uniform in order to satisfy the specifications and product characteristics that require various post-processes such as etching and electrode attachment for this type of epitaxial wafer. There must be. Further, in order to reduce the cost required for manufacturing an epitaxial wafer, it is necessary to simultaneously process a plurality of semiconductor wafers in a reaction vessel to increase the productivity of the epitaxial wafer.

In order to make the thickness of the compound semiconductor thin film and its composition uniform, the semiconductor wafer is rotated to make the contact between the semiconductor wafer and the reaction gas uniform, and to maintain the cleanness in the reaction vessel. It is preferable that the semiconductor wafer is rotationally driven by using a gas flow instead of mechanically rotating the semiconductor wafer.

In one example in which a semiconductor wafer is rotationally driven by a gas driving method, a susceptor holding a semiconductor wafer is rotatably mounted on a base, and a gas, that is, a driving gas is supplied between the susceptor and the base. A swirling flow is caused. According to such a gas driving method, the susceptor floats from the base by the pressure of the driving gas, and is rotated in one direction in a non-contact state with respect to the base by the swirling flow of the driving gas. Become.

(Problems to be Solved by the Invention) In the above-described gas driving method, the rotation speed of the susceptor, that is, the semiconductor wafer, is controlled by adjusting the flow rate of the driving gas. Even if it is changed, the susceptor, that is, the rotation speed of the semiconductor wafer does not change immediately according to this change,
Its responsiveness is bad. Moreover, if the flow rate of the driving gas is too low, the susceptor cannot be lifted from the base, and the susceptor may not be able to rotate. Therefore, it is difficult to stably maintain the rotation speed of the semiconductor wafer at the target rotation speed by using the closed loop control. For this reason, when simultaneously processing a plurality of semiconductor wafers in the reaction vessel, the rotation speed of each semiconductor wafer cannot be controlled to be constant, and therefore, the thickness of the compound semiconductor thin film in each semiconductor wafer cannot be controlled. Variation may occur.

The present invention has been made based on the above-described circumstances, and an object of the present invention is to simultaneously control a plurality of semiconductor wafers in a reaction vessel and control the rotation speed of each semiconductor wafer with high accuracy. An object of the present invention is to provide a semiconductor wafer film forming apparatus capable of making the thickness of a compound semiconductor thin film between semiconductor wafers uniform.

(Means for Solving the Problems) The present invention relates to a semiconductor wafer film forming apparatus for accommodating a plurality of semiconductor wafers in a reaction container and vapor-growing a compound semiconductor thin film on these semiconductor wafers. The membrane device includes a base member disposed in the reaction container, a rotation member rotatably disposed on the base member, and capable of supporting one semiconductor wafer, and a rotation member provided on the base member and driven toward the rotation member. A plurality of first and second ejection holes each for ejecting gas, and a driving gas ejected from the first ejection hole are provided on at least one of the base member and the rotating member, and are guided between the base member and the rotating member. A plurality of first driving grooves for guiding the rotating member in one direction, and a driving gas provided from at least one of the base member and the rotating member for rotating the driving gas with the base member. And a plurality of second drive grooves that guide and guide the rotating member to rotate the rotating member in another direction.

(Operation) According to the semiconductor wafer film forming apparatus described above, at least one of the base member and the rotating member is provided with the plurality of first drive grooves and the plurality of second drive grooves, respectively. By flowing the driving gas along the rotating member, the rotating member holding the semiconductor wafer can be rotated in one direction, and by flowing the driving gas along the second driving groove, the rotating member can be rotated in the other direction. Can be done. Accordingly, when the rotating member is rotating in one direction, if the flow rate of the driving gas flowing along the second driving groove is increased, the rotation of the rotating member can be braked, and the rotation can be rapidly decelerated. can do. On the other hand, while reducing the flow rate of the drive gas flowing along the second drive groove, while increasing the flow rate of the drive gas flowing along the first drive groove, the braking force against the rotation of the rotating member is reduced. In addition, the rotation force of the rotating member can be increased, and the rotation of the rotating member can be rapidly accelerated. That is, according to the film forming apparatus of the present invention, the number of rotations of the rotating member can be controlled by adjusting the flow rate of the drive gas flowing along the first and second drive grooves, and the control of the control can be performed. Responsiveness can be improved.

At least one of the base member and the rotating member has a first member.
And, it is preferable to make the driving gas flowing along the second driving groove collide, and to provide irregularities for assisting the rotation of the rotating member given by the driving gas flow. Responsiveness to control can be further improved.

(Embodiment) A semiconductor wafer film forming apparatus according to a first embodiment of the present invention will be described below with reference to FIGS.

First, FIG. 2 shows the entire semiconductor wafer film forming apparatus, and this film forming apparatus is a reaction vessel made of quartz.
It has ten. The reaction vessel 10 has a flat cylindrical shape, and includes a bottom wall plate 11 and a shell 12 that covers the bottom wall plate 11 from above. A reaction gas introduction port 13 protruding upward is formed at the center of the shell 12, and the introduction port 13 is
It is connected to a reaction gas supply source (not shown). Here, a mixed gas composed of a plurality of source gases is used as the reaction gas. Further, a plurality of exhaust ports 14 are provided on the peripheral wall of the shell 12, and these exhaust ports 14
It is connected to a not-shown exhaust means. Therefore, the inside of the reaction vessel 10 can be evacuated via the exhaust port 14 and the exhaust means.

Further, a rotating plate 15 is arranged in the reaction vessel 10. This rotating plate 15 has a circular shape,
A guide projection 16 is integrally protruded from the center of the upper surface. The guide projection 16 is connected to the cylindrical portion 17 from the rotating plate 15 side, and the cylindrical portion 17 is integrally connected to an upper wall of a cover described later. The portion of the guide projection 16 projecting from the upper wall of the cover is a conical portion 19, which is positioned coaxially with the axis of the introduction port 13.

On the other hand, from the center of the lower surface of the rotating plate 15, a rotating shaft 20 is integrally formed and protrudes downward, and the rotating shaft 20 is positioned coaxially with the introduction port 13, and attached to the bottom wall plate 11. Through the bearing 21 and the bottom wall plate
Supported by 11. The rotating shaft 20 penetrates the bottom wall plate 11 in an airtight manner, extends outside the reaction vessel 10, and is connected to a rotation driving mechanism (not shown). Therefore, the rotation plate 15 is rotatable by the rotation drive mechanism.

In this embodiment, four bases 22 are fixedly arranged on the upper surface of the rotating plate 15 as base members in this embodiment. Each base 22 is formed of a circular disk and is arranged at equal intervals in the circumferential direction of the rotating plate 15, as is clear from FIG. The periphery of the upper surface of each base 22 is chamfered as is apparent from FIG. 4, thereby forming a tapered surface 23.

A susceptor 24 made of carbon is disposed on each base 22 as a rotating member. Each susceptor 24
Has a circular shape, and a rim 25 surrounding the base 22 is integrally protruded downward from the periphery thereof. The inner peripheral wall of the rim 25 has a tapered surface 26 that matches the tapered surface 23 of the base 20. On the upper surface of the susceptor 24, a circular recess 27 is formed concentrically.
In 27, a semiconductor wafer W to be processed can be held. In the case of this embodiment, the semiconductor wafer W is GaAs or
Consists of InP. Further, as shown in FIG. 4, a resistance heater 28 is embedded in the base 22,
The resistance heater 28 can heat the susceptor 24 to a predetermined temperature.

Then, on the upper surface of the base 22, as shown in FIG. 1, a groove pattern forming a first drive groove and a second drive groove is formed. In the case of this embodiment, the groove patterns are arranged vertically in the diametric direction with respect to the axis of the base 22 as seen in FIG. 1, and a pair of small-diameter arc grooves 29a and 29b facing each other with a line along the orthogonal direction interposed therebetween. , And 30a,
30b, and large-diameter arc grooves 31a and 31b facing each other with the line interposed therebetween so as to surround these arc grooves.

In the above-mentioned groove pattern, the first ejection holes 32a are provided in the small-diameter arc grooves 29a and 30b located diagonally.
These first ejection holes 32a are formed in the small-diameter circular arc grooves 29a and 30b.
An opening is formed in the bottom wall of the inner end located on the center side of the base 22. Further, the first ejection holes 32b are also formed in the large-diameter arc grooves 31a and 31b, respectively. In the case of the large-diameter arc groove 31a on the small-diameter arc groove 29a side, the first ejection holes 32b are small-diameter arc grooves 29a. It is open on the bottom wall at one end, farther from
In the other large-diameter arc groove 31b, an opening is formed in the bottom wall at the end remote from the small-diameter arc groove 30b. Here, the small-diameter circular grooves 29a and 30b and the large-diameter circular grooves 31a and 31b constitute a first driving groove.

On the other hand, in the remaining small-diameter arc grooves 29b and 30a, the base 2
A second ejection hole 33a is opened in the bottom wall of the inner end located on the center side of the second 2 and the second ejection hole is formed in the bottom wall of the other end in the large-diameter arc grooves 31a and 31b. 33b is open. Therefore, the small-diameter circular grooves 29a and 30a constitute a second driving groove, and the large-diameter circular grooves 31a and 31b are not only the first driving grooves but also the second driving grooves.

The first and second ejection holes 32a, 32b, 33a, 33b are connected to a plurality of supply passages 34, 35 formed in the base 22 and the rotating plate 15, and these supply passages 34, 35 It extends inside the rotating shaft 20 of the rotating plate 15 and is connected to a driving gas supply source (not shown). The driving gas supply source supplies an inert gas such as hydrogen gas or argon gas to each of the supply passages 3.
4,35 can be supplied independently, and its flow rate can also be controlled independently. It is needless to say that the flow rate of the drive gas flowing through the supply passages 34 and 35 can be independently controlled for each base 22.

In this embodiment, a part of the supply passages 34 and 35 located in the base 22 are formed as preheating chambers 34a and 35a surrounded by the resistance heater 28.

FIG. 4 shows one of the first ejection holes,
Only the connection between the orifices 32a, 32b and the supply passage 34 is shown, and the second
Only the connection between the ejection holes 33a, 33b and the supply passage 35 is shown.

Further, in the case of this embodiment, the rim 25 of the susceptor 24 includes
As shown in FIG. 5, the notches 36 are formed at equal intervals in the circumferential direction, so that the peripheral edge of the susceptor 24 has an uneven tooth surface (irregularities). In the case of this embodiment, the notch 36 is formed by a groove whose lower surface is inclined in a direction opposite to the tapered surface 26 of the rim 25 in the susceptor 24 described above.

In the case of this embodiment, as shown in FIG. 2, the inner surface of the bottom wall plate 11 faces the periphery of the susceptor 24 in each base 22, that is, the above-mentioned tooth surface, and the rotational speed sensor 38 are arranged respectively. Each rotation speed sensor 38
The tooth surface of the corresponding susceptor 24, that is, the number of passing teeth is detected, and the rotational speed of the susceptor 24 can be obtained.

The upper part of the rotating plate 15 and its outer periphery are covered with a cover.
Although covered by 37, the cover 37 is formed integrally with the rotating plate 15. That is, the integral disk member composed of the rotating plate 16 and the cover 37 forms a recess having a larger diameter than the rotating plate 15 inside thereof, leaving the cylindrical portion 17 of the guide projection 16 described above inside. Holes corresponding to each susceptor 24 are formed in the upper wall, and a plurality of communication holes 37a are formed in the lower wall so as to surround the rotating plate 15 at intervals in the circumferential direction. In this case, the upper surface of the cover 37 is positioned at substantially the same level as the upper surface of the susceptor 24.

 Next, the operation of the above-described film forming apparatus will be described.

First, the susceptor 24 of each base 22 in the reaction vessel 10
The semiconductor wafers W are respectively held in the reaction vessel 10 and the inside of the reaction vessel 10 is evacuated to atmospheric pressure or about 100 Torr.
4 That is, the semiconductor wafer W is heated for about 800
Heat to ° C. In such a state, the reaction gas is introduced into the reaction vessel 10 through the introduction port 13 while rotating the rotating plate 15 together with the guide ring portion 37 at a predetermined speed in one direction. The reaction gas thus introduced is radially distributed by the conical portion 19 of the guide projection 15, and flows along the upper surface of each semiconductor wafer W and the upper surface of the cover 37 toward the periphery of the cover 37. After that, the reaction gas flows from the periphery of the cover 37 to the cover 37.
Exhaust port through a passage defined between the shell and the shell 12
It flows toward 14 and is exhausted from this exhaust port 14.

On the other hand, at the same time as the reaction gas is introduced into the reaction vessel 10 as described above, the supply passages 34, 3
A driving gas is supplied through 5, and the driving gas is jetted toward the susceptor 24 from each of the first and second jet holes 32 a, 32 b, 33 a, 33 b in each base 22. The susceptor 24 of each base 22 slightly floats from the base 22 due to the pressure generated by the ejection of the driving gas, as shown in FIG. The ejected driving gas is
Mainly, as indicated by an arrow F in FIG. 1, the fluid flows along the corresponding arc groove.
If the drive gas is ejected only from the ejection holes 32a and 32b, the flow of the drive gas is generated clockwise as seen in FIG. 1 only in the small-diameter arc grooves 29a and 30b among the small-diameter arc grooves.
In the large-diameter arc grooves 31a and 31b, the flow of the driving gas is generated clockwise as seen in FIG.
Therefore, in this case, the susceptor 24 is rotated in one direction so as to be dragged with the flow of the driving gas. On the other hand, if the driving gas is ejected only from the second ejection holes 33a, 33b, the driving gas is supplied only in the small-diameter arc grooves 29b, 30a in the counterclockwise direction as viewed in FIG. Is generated, and the large-diameter circular grooves 31a, 31
Also in b, the flow of the driving gas in the counterclockwise direction as shown in FIG. 1 is generated. Therefore, in this case, the susceptor 24 is rotated in the direction opposite to the one direction so as to be dragged with the flow of the driving gas.

Therefore, according to the film forming apparatus of the present invention, the driving gas is ejected from the first ejection holes 32a and 32b of each base 22, and the driving gas is ejected into the small-diameter arc grooves 29a and 30b and the large-diameter arc grooves 32a and 31b. By generating a flow of the driving gas in the clockwise direction as seen in FIG. 1, the susceptor 24 is rotated in one direction, and in this state, the driving gas is also discharged from the second discharge holes 33a and 33b. Thus, the rotation of the susceptor 24 can be braked. That is, when the flow of the driving gas is generated counterclockwise from the second ejection holes 33a, 33b into the small-diameter circular grooves 29b, 30a and the large-diameter circular grooves 31a, 31b, the counterclockwise direction is generated. The driving gas flow acts as a braking force against the rotational force in the susceptor 24 in one direction, and the rotation of the susceptor 24 can be decelerated.
By adjusting the amount of driving gas ejected from a, 33b,
Its size can be varied.

On the other hand, in a state in which the driving gas is ejected from the first and second ejection holes 32a, 32b, 33a, 33b, respectively, the second ejection holes 33a, 33b
While reducing the amount of driving gas ejected from the
Increasing the amount of driving gas ejected from 32a, 32b increases the unidirectional rotational force at susceptor 24,
24 rotations can be accelerated.

Since the rotation of each susceptor 24 is monitored by the above-described rotation speed sensor 38, the base 22 that forms a pair with the susceptor 24 based on a sensor signal from each rotation speed sensor 38.
In this case, the rotational speed of the susceptor 23 is controlled with high accuracy by the closed-loop control by adjusting the ejection amount of the driving gas ejected from the first and second ejection holes 32a, 32b, 33a, 33b. be able to. As a result, the rotating plate 15
If four susceptors 24 are arranged in each susceptor,
By individually controlling the number of rotations of 24, each susceptor 2
4, ie, the rotation speed of each semiconductor wafer can be controlled uniformly. In performing such rotation speed control,
When the susceptor 24 is rotated in one direction, the film forming apparatus of the present invention can apply a large brake to the rotation of the susceptor 24 to rapidly reduce the rotation.
By releasing the braking force, the rotation can be rapidly accelerated, so that the responsiveness to the rotation control of the susceptor 24 can be greatly improved.

Therefore, according to the film forming apparatus of the present invention, since each susceptor 24 in the reaction vessel 10, that is, each semiconductor wafer W can be rotated uniformly, a compound semiconductor having a uniform film thickness is formed on these semiconductor wafers W. The thin film can be epitaxially grown, which is suitable for mass production. In the case of this embodiment, the compound semiconductor thin film is made of GaAs, AlGaAs, InP, Ga
It is composed of Group III and IV elements such as InAsP.

Further, since each susceptor 24 is rotated by the driving gas, dust or the like generated by abrasion in the mechanical driving mechanism is not taken into the compound semiconductor thin film formed on each semiconductor wafer W. Needless to say, the composition is also uniform.

In the case of the above-described embodiment, the first and second injection holes
The driving gas ejected from 32a, 32b, 33a, 33b generates a flow as described above and is discharged to the outside from the periphery of the rotating plate 15, but at this time, the periphery of the susceptor 24 Since the tooth-shaped irregularities are formed, the driving gas is supplied to the susceptor 2 by the presence of the projection 36a shown in FIG.
The gas is mainly discharged from the space between the base 4 and the base 22 downward, for example, by 45 °, and is discharged through the discharge port 14 through a passage defined between the base 22 and the cover 27. Therefore, the driving gas does not enter above the susceptor 24, and the driving gas and the reaction gas do not mix above each semiconductor wafer W, so that the formation of the compound semiconductor thin film by the reaction gas is adversely affected. Not even.

The driving gas is supplied to the first and second ejection holes 32a, 32b, 33a,
Before being ejected from 33b, it is heated to about 300 ° C. to 400 ° C. by passing through the above-mentioned preheating chamber 28, and the susceptor 24, that is, the semiconductor wafer W may be undesirably cooled by the driving gas. Absent.

Further, when the driving gas is discharged from the peripheral edge of the susceptor 24, the exhaust gas flow of the driving gas collides with the projection 36a on the peripheral edge of the susceptor 24. Thus, the rotation of the susceptor 24 is assisted. That is, the exhaust flow of the driving gas is
When colliding with a, the exhaust gas flow of the driving gas is already given a turning force in a predetermined direction. A rotational force will be additionally applied.

The present invention is not limited to the film forming apparatus of the first embodiment described above, and various modifications are possible. Referring to FIG. 6 and FIG. 7, the second embodiment of the present invention It is shown. In the case of the second embodiment, as shown in FIG. 6, the upper surface of the base 22 is located on the peripheral side of the base 22 and at equal intervals on the same circumference from the center thereof. One orifice 40 is arranged, and second orifice 41 is
It is located inside the ejection hole 40 and is also arranged at equal intervals on the same circumference from the center of the base 22. On the upper surface of the base 22, groove patterns constituting the first and second drive grooves are formed, and the groove patterns are all formed of arc grooves having the same shape. That is, the first ejection hole
As is apparent from FIG. 6, the first drive groove paired with 40 consists of arc grooves 43 which are arranged at equal intervals in the circumferential direction of the base 22 and protrude counterclockwise. On the other hand, the second driving grooves forming a pair with the second ejection holes 41 are arranged at equal intervals in the circumferential direction, and are arranged inside the arc groove 43 and in an opposite direction to the arc groove 43. Consists of The susceptor 24 has a diameter slightly larger than that of the base 22, and a plurality of grooves 45 are formed on the lower surface of the susceptor 24 radially to the peripheral edge of the susceptor 24, as shown in FIG. These grooves 45 correspond to the tooth-shaped irregularities of the susceptor 24 in the first embodiment.

It is clear that the second embodiment has the same effect as the first embodiment, but in this case,
In order to stably rotate the susceptor 24, the susceptor 24 may be rotatably supported on the base 22 via a pivot shaft, though not shown.

8 and 9, the third embodiment of the present invention will be described.
An example is shown. In the case of the third embodiment, the susceptor 46 has a cylindrical shape that covers not only the upper surface of the base 22 but also the peripheral surface thereof.
Are formed. In the case of this embodiment, the first and second ejection holes 48 and 49 are opened not on the upper surface of the base 22 but on the outer peripheral surface thereof. As shown in FIG. 8, each of the first and second ejection holes 48, 49 is positioned adjacent to each other in the circumferential direction so as to form a pair, and the first and second ejection holes are also provided. The pair of 48 and 49 are arranged at equal intervals in the circumferential direction of the base 22. Here, even in the case of the third embodiment, the first and second ejection holes 48 and 49 which cooperate with the first
The second drive groove is formed by arc grooves 50 and 51 formed on the outer peripheral surface of the base 22 so as to form a C shape as seen in FIG. As shown in FIG. 9, grooves 52 extending in the axial direction are formed on the inner peripheral wall of the susceptor 46 at equal intervals in the circumferential direction.

Even if the first and second driving grooves, that is, the arc grooves 50 and 51 are formed on the peripheral surface of the base 22 as in the third embodiment described above,
The susceptor 46 can be rotated. In this case, the flow of the driving gas for rotating the susceptor 46 is generated between the outer peripheral surface of the base 22 and the inner peripheral surface of the susceptor 46.

Finally, referring to FIG. 10, there is shown a fourth preferred embodiment of the present invention. In the fourth embodiment, similarly to the third embodiment, the first and second ejection holes 53 and 54 and the arc grooves 55 and 56 constituting the first and second drive grooves are all formed on the base. Two
However, in the case of the third embodiment, the arc grooves forming the first and second driving grooves are formed.
In the case of the fourth embodiment, the arc grooves 55 and 56 forming the first and second drive grooves are arranged on the outer periphery of the base 22 while the first and second drive grooves are arranged separately from each other. In the plane, they are arranged separately in the vertical direction. In the case of the fourth embodiment, the susceptor 57 has a cylindrical shape, the lower part of its peripheral wall is enlarged, and a ring member 58 surrounding the lower part of the base 22 is fixed to the rotating plate 15. ing. The inner diameter of the ring member 58 is substantially the same as the inner diameter of the upper part of the peripheral wall in the susceptor 57, and
A discharge passage for the reaction gas and the driving gas is defined between the ring member 58 and the lower part of the peripheral wall where the diameter of the susceptor 57 is increased. In the case of the fourth embodiment, a groove corresponding to the groove 52 of the third embodiment is formed on the inner peripheral surface of the upper peripheral wall of the susceptor 57 and the inner peripheral surface of the ring member 58.

Further, in each of the embodiments described above, in each case, the first and second drive grooves are formed in the base 22. However, the first and second drive grooves may be formed in the susceptor. Alternatively, it may be formed on both the base and the susceptor, and the irregularities on the susceptor may be arranged on the base or both the base and the susceptor.

(Effects of the Invention) As described above, according to the apparatus for forming a semiconductor wafer of the present invention, a base member disposed in a reaction vessel,
A rotating member rotatably disposed on the base member and capable of supporting one semiconductor wafer, and a rotating member provided on the base member;
A plurality of first and second ejection holes for ejecting the driving gas toward the rotating member, and at least one of the fixed member and the rotating member are provided on at least one of the fixed member and the rotating member, and the driving gas ejected from the first ejection hole is rotated with the base member. A plurality of first driving grooves for guiding and guiding between the member and one-way rotation of the rotating member, and a second driving groove provided on at least one of the base member and the rotating member;
Since it is configured to have a plurality of second drive grooves that guide and guide the driving gas ejected from the ejection holes between the base member and the rotating member and give the rotating member rotation in the other direction, the first driving groove is provided. By adjusting the flow rate of the driving gas flowing along the second driving groove, not only the rotation speed of the rotating member, that is, the semiconductor wafer, can be controlled with high accuracy, but also the responsiveness to the control can be improved. . As a result, even when a plurality of semiconductor wafers are simultaneously processed in the reaction vessel, the number of rotations of each semiconductor wafer can be controlled to be uniform, so that the thickness of the compound semiconductor thin film formed on each semiconductor wafer can be made uniform. And so on.

[Brief description of the drawings]

1 to 5 show a film forming apparatus according to a first embodiment of the present invention. FIG. 1 is a plan view of a base of the film forming apparatus, FIG. FIG. 3 is a plan view of a rotating plate to which a plurality of bases are attached in the film forming apparatus, FIG. 4 is a sectional view taken along the line IV-IV in FIG. 1, and FIG. 5 is a susceptor of the film forming apparatus. FIGS. 6 and 7 show a second embodiment of the present invention. FIG. 6 is a plan view of a base, FIG. 7 is a bottom view of a susceptor, and FIGS. 9 shows a third embodiment of the present invention, FIG. 8 is a cross-sectional view of a part of a film forming apparatus, FIG. 9 is a cross-sectional view of the susceptor of FIG. 8, and FIG. FIG. 9 is a partial cross-sectional view of a film forming apparatus showing a fourth embodiment. 10… Reaction vessel, 22 …… Base (base member), 24,46,
57: Susceptor (rotating member), 29a, 30b: Small-diameter circular groove (first driving groove), 29b, 30a: Small-diameter circular groove (second driving groove), 31a, 32b: Large-diameter circular groove (No. The first and second drive grooves), 32a, 32b, 40, 53 ... first ejection holes, 33a, 33b, 41, 54 ...
... Second ejection hole, 36a ... Projection, 43,50,55 ... Circular groove (first drive groove), 44,51,56 ... Circular groove (second drive groove), 45,5
2 …… groove.

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 21/205

Claims (1)

(57) [Claims] 1. A semiconductor wafer film forming apparatus for accommodating a plurality of semiconductor wafers in a reaction vessel and vapor-growing a compound semiconductor thin film on these semiconductor wafers, comprising: a base member disposed in the reaction vessel; A rotatable member rotatably disposed on the base member and capable of supporting one semiconductor wafer; and a plurality of first and second jets respectively provided on the base member and jetting a drive gas toward the rotary member. A first hole provided in at least one of the fixed member and the rotating member;
A plurality of first drive grooves that are ejected from the ejection holes to guide and guide the driving gas between the base member and the rotating member and provide the rotating member with one-way rotation, and are provided on at least one of the base member and the rotating member cup. And a plurality of second driving grooves for guiding the driving gas ejected from the second ejection holes between the base member and the rotating member and guiding the rotating member to rotate the rotating member in the other direction. For forming semiconductor wafers.