JP2765070B2 - Varistor - Google Patents
VaristorInfo
- Publication number
- JP2765070B2 JP2765070B2 JP1179615A JP17961589A JP2765070B2 JP 2765070 B2 JP2765070 B2 JP 2765070B2 JP 1179615 A JP1179615 A JP 1179615A JP 17961589 A JP17961589 A JP 17961589A JP 2765070 B2 JP2765070 B2 JP 2765070B2
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- sintered body
- value
- voltage
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、電子部品等をサージから保護するためのバ
リスタに関するものである。Description: TECHNICAL FIELD The present invention relates to a varistor for protecting electronic components and the like from surges.
従来の技術 従来、電圧依存性非線形抵抗特性を有する酸化亜鉛を
主成分とする焼結体に、Ag電極を設ける際には、Ag粉に
B2O3,SiO2,Bi2O3等より成るガラスフリット，樹脂，溶
剤を混合させたAgペーストを焼結体に印刷し、熱処理す
るのが一般的であった。また、α値（電圧非直線指数）
の向上や、サージ耐量の向上の目的で、ガラスフリット
中にガラス状のAg2Oを含有させ、焼結体内に拡散させる
ものもあった（特公昭54−318号公報）。Conventional technology Conventionally, when an Ag electrode is provided on a sintered body mainly composed of zinc oxide having a voltage-dependent nonlinear resistance characteristic, the
It has been common practice to print on a sintered body an Ag paste in which a glass frit made of B 2 O 3 , SiO 2 , Bi 2 O 3, etc., a resin, and a solvent are mixed, followed by heat treatment. Α value (voltage non-linear index)
For the purpose of improving the resistance and surge resistance, there was a method in which glassy frit contained glassy Ag 2 O and diffused into a sintered body (Japanese Patent Publication No. 54-318).
発明が解決しようとする課題 しかしながら、上記の方法で作成されたバリスタは、
α値も、衝撃電流（8/20μｓ）による変化率も、従来の
SiCバリスタ等に比べ良好であるが、近年の電子機器の
発達に伴って電子部品の高性能化が望まれており、より
高性能な特性を有するサージアブソーバーが要求される
ようになってきた。However, the varistor created by the above method is
Both the α value and the rate of change due to the impact current (8/20 μs)
Although it is better than a SiC varistor or the like, with the recent development of electronic devices, higher performance of electronic components has been desired, and surge absorbers having higher performance characteristics have been required.
本発明は、バリスタの制限電圧比と、サージ耐量を向
上させるものである。The present invention is intended to improve the limiting voltage ratio of a varistor and the surge resistance.
課題を解決するための手段 本発明のバリスタは、電圧依存性非直線形抵抗特性を
有する焼結体と、この焼結体に設けた電極とを備え、こ
の電極は、Agを（100−ｘ）wt％、Ag2Oを（ｘ）wt％
（0.1≦Ｘ≦50）含有した組成物100部に対して、B2O3,S
iO2,Bi2O3を含有するガラスフリットを５〜40wt％添加
したもので形成したものである。Means for Solving the Problems A varistor according to the present invention includes a sintered body having a voltage-dependent non-linear resistance characteristic, and an electrode provided on the sintered body, and the electrode includes Ag (100-x ) Wt%, Ag 2 O to (x) wt%
(0.1 ≦ X ≦ 50) B 2 O 3 , S
It is formed by adding 5 to 40 wt% of a glass frit containing iO 2 and Bi 2 O 3 .
作 用 この構成により、Agペースト中にAg2O粒が含有してい
るため、Ag2Oは酸化剤として一般に知られており、200
℃以上の高温になるとはげしく酸素を放出してAgとなる
特性を有しているために、焼結体表面の酸化の進行と、
Ag2OからAgに変化することによるAg電極の構成を利用す
ることができ、制限電圧特性と、サージ耐量特性の向上
を図ることができる。Operation With this configuration, Ag 2 O particles are contained in the Ag paste, so that Ag 2 O is generally known as an oxidizing agent.
At a high temperature of ℃ or more, it has the property of rapidly releasing oxygen to become Ag, so that the oxidation of the sintered body surface progresses,
The configuration of the Ag electrode by changing from Ag 2 O to Ag can be used, and the limiting voltage characteristic and the surge withstand characteristic can be improved.
実施例 以下、本発明を実施例に基づいて詳細に説明する。ま
ず、酸化亜鉛の粉末に、酸化ビスマス，酸化コバルト，
酸化マンガン，酸化ニッケル，酸化アンチモンの粉末を
それぞ0.01〜5.00モル％添加し、十分混合した。これ
を、直径13.5mm厚さ12mmに圧縮成型し、この成型体を、
空気中において1000〜1300℃で２時間焼成して焼結体と
して用いた。一方、ガラスフリットは、酸化ビスマス，
酸化ケイ素，無水ホウ酸をそれぞれ90〜5wt％添加し、
十分混合させた後アルミナルツボで、800〜1300℃で30
分間溶融させた後、急冷し、得られた粒状ガラスを粉砕
し、ガラスフリットを作った。Examples Hereinafter, the present invention will be described in detail based on examples. First, bismuth oxide, cobalt oxide,
Manganese oxide, nickel oxide, and antimony oxide powders were each added in an amount of 0.01 to 5.00 mol% and mixed well. This is compression molded to a diameter of 13.5mm and a thickness of 12mm.
It was fired in air at 1000-1300 ° C. for 2 hours and used as a sintered body. On the other hand, glass frit is made of bismuth oxide,
90-5wt% of silicon oxide and boric anhydride are added respectively
After thorough mixing, use an alumina crucible at 800-1300 ° C for 30 minutes.
After melting for a minute, the mixture was quenched, and the obtained granular glass was pulverized to form a glass frit.
Agペーストは、Ag粉（100−Ｘ）wt％Ag2O粉（Ｘ）wt
％よりなる組成物100部に対してガラスフリット15wt
％，樹脂10wt％，溶剤40wt％に配合し、十分混練してペ
ースト状物質を作成した。Ag paste, Ag powder (100-X) wt% Ag 2 O powder (X) wt
% Frit to 100 parts of a composition consisting of
%, Resin 10 wt%, and solvent 40 wt%, and kneaded well to prepare a paste-like substance.
以上のごとく調整されたAg電極ペーストを、上記焼結
体の両面に素子１個当り10〜20mg塗布し、空気中で、60
0℃〜900℃の温度で１時間焼付けた。Ag焼付の終了した
焼結体は、サージ試験等を行うために、リード線を両Ag
電極面にハンダ付けし、樹脂でモールドして素子を作成
した。The above-prepared Ag electrode paste was applied to both surfaces of the sintered body in an amount of 10 to 20 mg per element, and was applied in the air at 60 to 60 mg.
Baking was performed at a temperature of 0 ° C to 900 ° C for 1 hour. For the sintered body after Ag baking, connect the lead wires to both Ag
The element was soldered to the electrode surface and molded with a resin to form an element.
上記素子に対して、以下の測定を行った。V1mAの測
定（直流安定化電源で1mAの電流を流した際の素子にか
かる電圧）、V50Aの測定（8/20μｓで波高値が50Aの
衝撃電流を流した際、素子にかかる最大の電圧）、Δ
V1mAの測定（8/20μｓで波高値が5000Aの電流を２分間
隔で２回同方向に流した後のV1mA値の変化率）。上記
，より、制限電圧比V50A/V1mAを求めた。この測定
により得られたV50A/V1mA値と、ΔV1mAのAg2O含有量と
の関係を第１表及び第１図，第２図に示す。The following measurement was performed on the above-described device. V 1mA measurement (voltage applied to the element when a current of 1 mA flows through a stabilized DC power supply), V50A measurement (maximum applied to the element when an impact current with a peak value of 50A flows in 8 / 20μs) Voltage), Δ
Measurement of V 1mA (8/20 .mu.s at the rate of change of V 1mA values after peak value of electric current is flown 5000A twice in the same direction at 2-minute intervals). From the above, the limiting voltage ratio V50A / V1mA was determined. Table 1 and FIGS. 1 and 2 show the relationship between the V 50 A / V 1 mA value obtained by this measurement and the Ag 2 O content of ΔV 1 mA .
Ag2O含有量（Ｘ）mol％とV50A/V1mA値，ΔV1mA値の測定
値の一例 第１図，第２図を見るとV50A/V1mA値及びΔV1mA値
が、Ag2OのAgに対する含有量が0.1〜50wt％の範囲で向
上していることがわかる。このようにAg2OはAgに対して
0.1〜50wt％の範囲内で制限電圧特性とサージ耐量特性
に有効であることがわかる。 Example of measured values of Ag 2 O content (X) mol% and V 50 A / V 1 mA value and ΔV 1 mA value In FIGS. 1 and 2, the V 50 A / V 1 mA value and ΔV 1 mA value are represented by Ag 2 It can be seen that the content of O with respect to Ag is improved in the range of 0.1 to 50 wt%. Thus, Ag 2 O reacts with Ag
It can be seen that within the range of 0.1 to 50% by weight, it is effective for limiting voltage characteristics and surge withstand characteristics.
尚、本実施例では、焼結体素子として酸化亜鉛型バリ
スタを用いたが、チタン酸ストロンチウム系のバリスタ
においても同様の効果が得られることを確認した。In this example, a zinc oxide type varistor was used as the sintered body element. However, it was confirmed that a strontium titanate-based varistor has the same effect.
発明の効果 以上本発明によると、Agを（100−ｘ）wt％、Ag2Oを
（ｘ）wt％（0.1≦Ｘ≦50）含有する組成物100部に対し
て、B2O3,SiO2,Bi2O3を含有するガラスフリットを５〜4
0wt％添加したものを用いて電極を形成したことによ
り、制限電圧比と、衝撃電流による変化率、すなわちサ
ージ耐量特性の向上したバリスタを得ることができる。According to the effect than the present invention, the Ag (100-x) wt% , Ag and 2 O with respect to (x) wt% (0.1 ≦ X ≦ 50) a composition containing 100 parts, B 2 O 3, 5 to 4 glass frit containing SiO 2 and Bi 2 O 3
By forming an electrode using the one added with 0 wt%, a varistor having an improved limiting voltage ratio and a change rate due to an impact current, that is, an improved surge withstand characteristic can be obtained.
第１図は本発明の一実施例における方法で作成したバリ
スタの制限電圧比と、Ag2OのAgに対する割合を示した特
性図、第２図は同実施例の方法で作成した酸化亜鉛型バ
リスタの衝撃電流に対する変化率とAg2OのAgに対する割
合を示した特性図である。FIG. 1 is a characteristic diagram showing a limiting voltage ratio of a varistor produced by the method according to the embodiment of the present invention and a ratio of Ag 2 O to Ag, and FIG. 2 is a zinc oxide mold prepared by the method of the embodiment. FIG. 4 is a characteristic diagram showing a change rate of a varistor with respect to an impact current and a ratio of Ag 2 O to Ag.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭52−26496（ＪＰ，Ａ) 特公 昭54−318（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.6，ＤＢ名) H01C 7/02 - 7/22──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-52-26496 (JP, A) JP-B-54-318 (JP, B2) (58) Fields investigated (Int. Cl. 6 , DB name) H01C 7/02-7/22
Claims (1)
体と、この焼結体に設けた電極とを備え、この電極は、
Agを（100−ｘ）wt％,Ag2Oを（ｘ）wt％（0.1≦Ｘ≦5
0）含有した組成物100部に対して、B2O3,SiO2,Bi2O3を
含有したガラスフリットを５〜40wt％添加したもので形
成したバリスタ。1. A sintered body having a voltage-dependent non-linear resistance characteristic, and an electrode provided on the sintered body.
Ag is (100−x) wt%, Ag 2 O is (x) wt% (0.1 ≦ X ≦ 5
0) A varistor formed by adding 5 to 40 wt% of a glass frit containing B 2 O 3 , SiO 2 and Bi 2 O 3 to 100 parts of the composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1179615A JP2765070B2 (en) | 1989-07-11 | 1989-07-11 | Varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1179615A JP2765070B2 (en) | 1989-07-11 | 1989-07-11 | Varistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0344003A JPH0344003A (en) | 1991-02-25 |
| JP2765070B2 true JP2765070B2 (en) | 1998-06-11 |
Family
ID=16068852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1179615A Expired - Fee Related JP2765070B2 (en) | 1989-07-11 | 1989-07-11 | Varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2765070B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114914042B (en) * | 2022-05-07 | 2024-02-02 | 吉林昱丰电气科技有限公司 | High-energy high-residual voltage ratio nonlinear resistor and parallel circuit |
-
1989
- 1989-07-11 JP JP1179615A patent/JP2765070B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0344003A (en) | 1991-02-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |