JP2743552B2 - Semiconductor inspection equipment - Google Patents
Semiconductor inspection equipmentInfo
- Publication number
- JP2743552B2 JP2743552B2 JP2061597A JP6159790A JP2743552B2 JP 2743552 B2 JP2743552 B2 JP 2743552B2 JP 2061597 A JP2061597 A JP 2061597A JP 6159790 A JP6159790 A JP 6159790A JP 2743552 B2 JP2743552 B2 JP 2743552B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- insulating film
- cleaning liquid
- dropping
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 ＜産業上の利用分野＞ 本発明は、半導体検査装置に関するものであり、詳し
くは、半導体ウェハの検査におけるプローブと半導体ウ
ェハとの電気的接触の改善に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor inspection apparatus, and more particularly, to improvement of electrical contact between a probe and a semiconductor wafer in semiconductor wafer inspection.
＜従来の技術＞ 半導体装置の検査にあたって、半導体ウェハの段階で
プローブを微小測定領域に接触させて電気的特性を測定
することも行われている。<Prior Art> In testing a semiconductor device, a probe is brought into contact with a minute measurement region at the stage of a semiconductor wafer to measure electrical characteristics.
ところで、例えばシリコン半導体ウェハの場合には、
第３図に示すように半導体ウェハ１の表面に絶縁膜であ
る自然酸化膜（SiO2）２が形成されやすく、プローブ３
と半導体ウェハ１との間で良好な電気的接触が得られな
いことがある。By the way, for example, in the case of a silicon semiconductor wafer,
As shown in FIG. 3, a natural oxide film (SiO 2 ) 2 which is an insulating film is easily formed on the surface of the semiconductor wafer 1 and the probe 3
Good electrical contact between the semiconductor wafer 1 and the semiconductor wafer 1 may not be obtained.
そこで、測定にあたっては、良好な電気的接触を得る
ために第４図に示すようにプローブ３を自然酸化膜２に
押付けながら摺動させ、プローブ３の先端で自然酸化膜
２を削り取ることが行われている。Therefore, in the measurement, in order to obtain good electrical contact, the probe 3 is slid while being pressed against the natural oxide film 2 as shown in FIG. Have been done.
＜発明が解決しようとする課題＞ しかし、このような方法によれば、自然酸化膜２をプ
ローブ３の先端で引掻きながら強引に削り取っているた
めに、プローブ３のみならず半導体ウェハ１にも機械的
なダメージを与えてしまうことがある。<Problems to be Solved by the Invention> However, according to such a method, since the natural oxide film 2 is forcibly scraped off while being scratched by the tip of the probe 3, not only the probe 3 but also the semiconductor wafer 1 is mechanically removed. Can cause serious damage.
本発明は、このような点に着目したものであり、その
目的は、半導体ウェハに機械的なダメージを与えること
なく良好な電気的接触が得られる半導体検査装置を提供
することにある。The present invention pays attention to such a point, and an object of the present invention is to provide a semiconductor inspection device capable of obtaining good electrical contact without mechanically damaging a semiconductor wafer.
＜課題を解決するための手段＞ 本発明の半導体検査装置は、 半導体ウェハの測定部分に接触するプローブピンと、 このプローブピンが接触する半導体ウェハの測定微小
領域に絶縁膜を溶解させる薬液を滴下する薬液滴下手段
と、 半導体ウェハの薬液滴下領域に洗浄液を滴下する洗浄
液滴下手段と、 これら半導体ウェハに滴下された薬液，洗浄液および
溶解された絶縁膜を吸引する吸引手段とを具備し、 薬液を滴下して絶縁膜を溶解させた後薬液および溶解
された絶縁膜を吸引し、その後洗浄液を滴下して洗浄液
を吸引することにより半導体ウェハの測定微小領域の電
気的接触を得ることを特徴とする。<Means for Solving the Problems> A semiconductor inspection apparatus according to the present invention comprises: a probe pin in contact with a measurement portion of a semiconductor wafer; and a chemical solution for dissolving an insulating film in a measurement micro area of the semiconductor wafer in contact with the probe pin. A chemical liquid dropping means; a cleaning liquid dropping means for dropping a cleaning liquid on a region of the semiconductor wafer under the liquid droplet; and a suction means for sucking the chemical liquid, the cleaning liquid dropped on the semiconductor wafer and the dissolved insulating film. After dissolving the insulating film, the chemical solution and the dissolved insulating film are suctioned, and then the cleaning liquid is dropped to suction the cleaning liquid, thereby obtaining electrical contact of the measurement micro area of the semiconductor wafer.
＜作用＞ プローブを接触させる半導体ウェハの微小測定領域の
表面に形成されている絶縁膜は滴下される薬液により溶
解され、溶解された絶縁膜は薬液とともに吸引される。
そして、絶縁膜が溶解された半導体ウェハの表面には洗
浄液が滴下されて洗浄され、残渣は洗浄液とともに吸引
される。<Operation> The insulating film formed on the surface of the micro-measurement region of the semiconductor wafer to be brought into contact with the probe is dissolved by the dropped chemical, and the dissolved insulating film is sucked together with the chemical.
Then, the cleaning liquid is dropped and cleaned on the surface of the semiconductor wafer in which the insulating film is dissolved, and the residue is sucked together with the cleaning liquid.
これにより、プローブと半導体ウェハとの間には良好
な電気的接触が得られる。Thereby, good electrical contact is obtained between the probe and the semiconductor wafer.
＜実施例＞ 以下、図面を用いて本発明の実施例を詳細に説明す
る。<Example> Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図は、本発明の一実施例を示す構成説明図であ
る。図において、プローブ部４は２重管状に形成されて
いて、内部には半導体ウェハ１の測定部分に接触するプ
ローブピン５が設けられ、外管６は薬液と洗浄液の滴下
および吸引を行うものとして用いられる。外管６の端部
は切換バルブ７を介してプローブピン５が接触する半導
体ウェハ１の測定微小領域に絶縁膜２を溶解させる薬液
を滴下する薬液滴下手段として用いる薬液マニュピレー
タ８に接続され、さらに切換バルブ９を介して半導体ウ
ェハ１の薬液滴下領域に洗浄液を滴下する洗浄液滴下手
段として用いる洗浄液マニュピレータ10および半導体ウ
ェハ１に滴下された薬液，洗浄液および溶解された絶縁
膜２を吸引する吸引手段として用いる吸引用ポンプ11に
接続されている。FIG. 1 is an explanatory diagram showing the configuration of an embodiment of the present invention. In the drawing, a probe section 4 is formed in a double tubular shape, and a probe pin 5 for contacting a measurement portion of the semiconductor wafer 1 is provided therein, and an outer tube 6 performs dropping and suction of a chemical solution and a cleaning solution. Used. The end of the outer tube 6 is connected via a switching valve 7 to a chemical liquid manipulator 8 used as a chemical liquid dropping means for dropping a chemical liquid for dissolving the insulating film 2 into a measurement micro-region of the semiconductor wafer 1 with which the probe pins 5 come into contact. As a cleaning liquid manipulator 10 used as a cleaning liquid dropping means for dropping a cleaning liquid onto a region under the chemical liquid drop of the semiconductor wafer 1 via the switching valve 9 and a suction means for sucking the chemical liquid, the cleaning liquid dropped on the semiconductor wafer 1 and the dissolved insulating film 2 It is connected to the suction pump 11 to be used.
なお、プローブ部４としては、タングステン，パラジ
ウム合金，ベリリウム銅，白金などで構成されたものを
用いる。また、薬液としては、プローブ部４を腐蝕させ
ずに絶縁膜２をエッチングするもの、例えば絶縁膜２が
SiO2系の場合には適宜な濃度のHF液を用い、絶縁膜２が
Si3N4系の場合には50％濃度のHF液やりん酸液を用い
る。The probe section 4 is made of tungsten, palladium alloy, beryllium copper, platinum or the like. Further, as the chemical solution, a solution that etches the insulating film 2 without corroding the probe portion 4, for example, the insulating film 2 is used.
In the case of SiO 2 system, an appropriate concentration of HF solution is used, and the insulating film 2 is
In the case of the Si 3 N 4 system, a 50% concentration HF solution or phosphoric acid solution is used.
このように構成された装置の動作を説明する。 The operation of the thus configured device will be described.
（ステップ１） プローブ部４の先端を図示しない移動機構を用いて半
導体ウェハ１の測定微小領域近傍に接近させる。このと
き、プローブ部４の先端が絶縁膜２に軽く接触してもよ
い。(Step 1) The tip of the probe unit 4 is caused to approach the vicinity of the measurement minute area of the semiconductor wafer 1 using a moving mechanism (not shown). At this time, the tip of the probe unit 4 may lightly contact the insulating film 2.
（ステップ２） 切換バルブ７がマニュピレータ８と外管６を接続する
ように切り換えられ、絶縁膜２をエッチングする体積に
応じて、所定量の薬液が滴下されるようにマニュピレー
タ８が制御される。この薬液の滴下量は、絶縁膜２の種
類，面積，深さなどに基づいて例えばマイクロプロセッ
サで最適量に設定される。(Step 2) The switching valve 7 is switched so as to connect the manipulator 8 and the outer tube 6, and the manipulator 8 is controlled so that a predetermined amount of the chemical solution is dropped according to the volume of etching the insulating film 2. The drop amount of the chemical solution is set to an optimum amount by, for example, a microprocessor based on the type, area, depth, and the like of the insulating film 2.
（ステップ３） ステップ３で絶縁膜２の所定領域のエッチングが行わ
れた後、切換バルブ7,9がポンプ11と外管６を接続する
ように切り換えられ、半導体ウェハ１上の薬液および溶
解された絶縁膜２を吸引除去する。(Step 3) After the predetermined region of the insulating film 2 is etched in Step 3, the switching valves 7, 9 are switched so as to connect the pump 11 and the outer tube 6, and the chemical solution on the semiconductor wafer 1 and the solution are dissolved. The removed insulating film 2 is removed by suction.
（ステップ４） ステップ３で薬液および溶解された絶縁膜の吸引除去
が行われた後、切換バルブ7,9がマニュピレータ10と外
管６を接続するように切り換えられ、半導体ウェハ１上
の絶縁膜２がエッチング除去された部分にマニュピレー
タ10から洗浄液が滴下される。この洗浄液の滴下量も、
絶縁膜２の種類，面積，深さなどに基づいて例えばマイ
クロプロセッサで最適量に設定される。(Step 4) After the chemical solution and the dissolved insulating film are sucked and removed in Step 3, the switching valves 7, 9 are switched to connect the manipulator 10 and the outer tube 6, and the insulating film on the semiconductor wafer 1 is removed. The cleaning liquid is dropped from the manipulator 10 to the portion where 2 has been removed by etching. The drop amount of this cleaning liquid also
Based on the type, area, depth, and the like of the insulating film 2, for example, the amount is set to an optimum amount by a microprocessor.
（ステップ５） ステップ４で絶縁膜２のエッチング領域の洗浄が行わ
れた後、切換バルブ7,9が再び半導体ウェハ１と外管６
を接続するように切り換えられ、半導体ウェハ１上の洗
浄液を吸引除去する。(Step 5) After the etching area of the insulating film 2 is cleaned in Step 4, the switching valves 7, 9 are again operated to switch the semiconductor wafer 1 and the outer tube 6
And the cleaning liquid on the semiconductor wafer 1 is removed by suction.
（ステップ６） これらステップ4,5の洗浄工程は必要に応じて複数回
繰り返して実行する。(Step 6) The washing steps of Steps 4 and 5 are repeatedly performed as necessary.
（ステップ７） このようにして絶縁膜２がエッチング除去され洗浄さ
れた半導体ウェハ１の測定微小領域にプローブピン５の
先端を押圧接触させ、電気的な測定を行う。(Step 7) The tip of the probe pin 5 is brought into pressure contact with the measurement minute area of the semiconductor wafer 1 in which the insulating film 2 has been etched away and washed, and electrical measurement is performed.
このように構成することにより、絶縁膜２は薬液で除
去されるので、半導体ウェハ１の表面に機械的なダメー
ジを与えることはない。With this configuration, the insulating film 2 is removed with a chemical solution, so that the surface of the semiconductor wafer 1 is not mechanically damaged.
また、絶縁膜２をエッチング除去する薬液として人体
に有害な薬液を用いるが、一連のシーケンスは人手を介
することなく自動的に実行できるので安全である。Although a chemical solution harmful to the human body is used as a chemical solution for etching and removing the insulating film 2, a series of sequences can be automatically executed without manual operation, so that it is safe.
ところで、第１図の実施例ではプローブ部４が２重管
構造のものを用いたが、プローブピン５は折れ曲がりな
どにより交換することの多い消耗品である。ところが、
２重管構造は形状が複雑であることからコストが高く、
交換作業も簡単には行えない。By the way, in the embodiment of FIG. 1, the probe portion 4 has a double tube structure, but the probe pin 5 is a consumable which is frequently replaced due to bending or the like. However,
The double pipe structure has a high cost due to its complicated shape,
Exchange work is not easy.
しかし、このような問題は、第２図のようにプローブ
ピン３とエッチング用のパイプ12とを分離することによ
り解決できる。このような構成によれば、プローブピン
３のみを交換すればよく、コストは安く、交換作業も簡
単になる。なお、第２図の構成における動作シーケンス
は前述第１図の動作シーケンスと実質的に同一であり、
説明は省略する。However, such a problem can be solved by separating the probe pin 3 and the etching pipe 12 as shown in FIG. According to such a configuration, only the probe pin 3 needs to be replaced, the cost is low, and the replacement operation is simple. The operation sequence in the configuration of FIG. 2 is substantially the same as the operation sequence of FIG.
Description is omitted.
＜発明の効果＞ 以上説明したように、本発明によれば、半導体ウェハ
に機械的なダメージを与えることなく良好な電気的接触
が得られる半導体検査装置が実現できる。<Effects of the Invention> As described above, according to the present invention, it is possible to realize a semiconductor inspection device capable of obtaining good electrical contact without mechanically damaging a semiconductor wafer.
第１図は本発明の一実施例を示す構成説明図、第２図は
本発明位の他の実施例を示す構成説明図、第３図および
第４図は従来の装置の構成説明図である。 １……半導体ウェハ、２……絶縁膜、４……プローブ
部、５……プローブピン、６……外管、7,9……切換バ
ルブ、８……薬液マニュピレータ、10……洗浄液マニュ
ピレータ、11……吸引用ポンプ、12……エッチング用パ
イプ。FIG. 1 is a structural explanatory view showing one embodiment of the present invention, FIG. 2 is a structural explanatory view showing another embodiment of the present invention, and FIGS. 3 and 4 are structural explanatory views of a conventional apparatus. is there. DESCRIPTION OF SYMBOLS 1 ... Semiconductor wafer, 2 ... Insulating film, 4 ... Probe part, 5 ... Probe pin, 6 ... Outer tube, 7, 9 ... Switching valve, 8 ... Chemical liquid manipulator, 10 ... Cleaning liquid manipulator, 11 ... Suction pump, 12 ... Pipe for etching.
Claims (1)
ブピンと、 このプローブピンが接触する半導体ウェハの測定微小領
域に絶縁膜を溶解させる薬液を滴下する薬液滴下手段
と、 半導体ウェハの薬液滴下領域に洗浄液を滴下する洗浄液
滴下手段と、 これら半導体ウェハに滴下された薬液、洗浄液および溶
解された絶縁膜を吸引する吸引手段とを具備し、 薬液を滴下して絶縁膜を溶解させた後薬液および溶解さ
れた絶縁膜を吸引し、その後洗浄液を滴下して洗浄液を
吸引することにより半導体ウェハの測定微小領域の電気
的接触を得ることを特徴とする半導体検査装置。A probe pin in contact with a measurement portion of the semiconductor wafer; a chemical dropping means for dropping a chemical solution for dissolving an insulating film in a measurement micro-region of the semiconductor wafer contacting the probe pin; A cleaning liquid dropping means for dropping a cleaning liquid; and a suction means for sucking the chemical liquid, the cleaning liquid and the dissolved insulating film dropped on the semiconductor wafer, and the chemical liquid and the dissolving after dissolving the insulating film by dropping the chemical liquid. A semiconductor inspection device for obtaining electrical contact of a measurement micro-area of a semiconductor wafer by sucking the insulating film thus obtained, and thereafter dropping a cleaning liquid and sucking the cleaning liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2061597A JP2743552B2 (en) | 1990-03-13 | 1990-03-13 | Semiconductor inspection equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2061597A JP2743552B2 (en) | 1990-03-13 | 1990-03-13 | Semiconductor inspection equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03263343A JPH03263343A (en) | 1991-11-22 |
| JP2743552B2 true JP2743552B2 (en) | 1998-04-22 |
Family
ID=13175723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2061597A Expired - Lifetime JP2743552B2 (en) | 1990-03-13 | 1990-03-13 | Semiconductor inspection equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2743552B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5952050A (en) * | 1996-02-27 | 1999-09-14 | Micron Technology, Inc. | Chemical dispensing system for semiconductor wafer processing |
| CN115080327B (en) * | 2022-08-19 | 2022-12-06 | 江苏安纳金机械有限公司 | Automatic electrical measurement burning device for touch pad production line and use method |
-
1990
- 1990-03-13 JP JP2061597A patent/JP2743552B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03263343A (en) | 1991-11-22 |
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