JP2720199B2 - Ceramic substrate firing method - Google Patents

Ceramic substrate firing method

Info

Publication number
JP2720199B2
JP2720199B2 JP1133473A JP13347389A JP2720199B2 JP 2720199 B2 JP2720199 B2 JP 2720199B2 JP 1133473 A JP1133473 A JP 1133473A JP 13347389 A JP13347389 A JP 13347389A JP 2720199 B2 JP2720199 B2 JP 2720199B2
Authority
JP
Japan
Prior art keywords
firing
temperature
substrate
ceramic substrate
setter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1133473A
Other languages
Japanese (ja)
Other versions
JPH02311370A (en
Inventor
良平 岡崎
善明 石井
高浩 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP1133473A priority Critical patent/JP2720199B2/en
Publication of JPH02311370A publication Critical patent/JPH02311370A/en
Application granted granted Critical
Publication of JP2720199B2 publication Critical patent/JP2720199B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、コンデンサを形成するための誘電体基板の
ような、セラミックグリーンシートを焼成して得られる
セラミック基板の焼成方法に関するものである。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for firing a ceramic substrate, such as a dielectric substrate for forming a capacitor, obtained by firing a ceramic green sheet.

〔従来技術〕(Prior art)

電子部品の小型化や複合化に伴って、各種チップ部品
を搭載して機能部品を得るための誘電体基板などの需要
が高まっている。
As electronic components have become smaller and more complex, there has been an increasing demand for dielectric substrates and the like for obtaining functional components by mounting various chip components.

この誘電体基板等のセラミック基板は、金属酸化物粉
末にバインダー等を加え、これをドクターブレード等の
方法によりグリーンシートとし、焼成して得られる。
A ceramic substrate such as a dielectric substrate is obtained by adding a binder or the like to a metal oxide powder, forming a green sheet by a method such as a doctor blade, and firing.

焼成の生産性を上げるために、シートを多段に重ねて
同時に焼成することが望ましいが、その場合基板の反り
あるいはくっつきが生じ易くなる。多段に重ねて焼成す
る際には、敷き粉を介して積み重ねて焼成するが、基板
に敷き粉の跡が残ってしまうので緻密な基板の焼成には
利用することができない。
In order to increase the productivity of firing, it is desirable to stack the sheets in multiple stages and fire them at the same time, but in this case, the substrate is likely to warp or stick. When firing in multiple layers, firing is performed by stacking through a spreading powder. However, since traces of the spreading powder remain on the substrate, it cannot be used for firing a dense substrate.

また、反りについては矯正のための後処理等が必要と
なる。
In addition, post-processing or the like for correcting the warp is required.

〔課題〕〔Task〕

本発明は、敷き粉を用いずに多段に積層して焼成でき
るセラミック基板の焼成方法を提供するものである。
The present invention provides a method of firing a ceramic substrate that can be stacked and fired in multiple stages without using a litter.

また、反りなどの物理的な特性だけでなく、結晶性等
の電気的性質に影響する特性をも改善しようとするもの
である。
In addition, it is intended to improve not only physical characteristics such as warpage but also characteristics affecting electrical characteristics such as crystallinity.

〔課題を解決するための手段〕[Means for solving the problem]

本発明は、一次焼成を低温で行い、その後反応性の小
さいセッターを用いて、所定の温度で本焼成を行うこと
によって、上記の課題を解決するものである。
The present invention solves the above-mentioned problem by performing primary firing at a low temperature and then performing main firing at a predetermined temperature using a setter having low reactivity.

すなわち、セラミックグリーンシートを多段に重ねて
所定の焼成温度よりも低い温度で焼成した後、該セラミ
ック基板を反応性の小さいセッターと交互に重ね、多段
に積層して所定の焼成温度で焼成することに特徴を有す
るものである。
That is, after stacking ceramic green sheets in multiple stages and firing at a temperature lower than a predetermined firing temperature, the ceramic substrates are alternately stacked with a less reactive setter, stacked in multiple stages, and fired at a predetermined firing temperature. It is characterized by the following.

また、セラミッググリーンシートを多段に重ねて所定
の焼成温度よりも低い温度で焼成した後、該セラミック
基板を、該セラミック基板と同一組成のシートを所定の
焼成温度よりも高い温度で焼成して得たセッターと交互
に重ね、多段に積層して所定の焼成温度で焼成すること
に特徴を有するものである。
Further, after the ceramic green sheets are stacked in multiple stages and fired at a temperature lower than a predetermined firing temperature, the ceramic substrate is fired at a temperature higher than the predetermined firing temperature with a sheet having the same composition as the ceramic substrate. The method is characterized in that the obtained setters are alternately stacked, stacked in multiple stages, and fired at a predetermined firing temperature.

〔作用〕[Action]

反応性の低いセッターを用いることにより、焼成時に
組成元素の拡散が防止され、電気的な特性を安定させる
ことができる。
By using a setter having low reactivity, diffusion of the constituent elements during firing is prevented, and electrical characteristics can be stabilized.

また、結晶性の面でも表面の結晶粒子が均一成長し、
緻密化することが確認された。
Also, on the crystalline surface, the crystal grains on the surface grow uniformly,
It was confirmed that densification was achieved.

〔実施例〕〔Example〕

以下、本発明の実施例について説明する。 Hereinafter, examples of the present invention will be described.

材料としては、コンデンサに利用されるSrTiO3−CaTi
O形の誘電体セラミックを用い、厚さ0.3〜0.5mmの誘電
体基板用のセラミックグリーンシートを用いた。
As a material, SrTiO 3 -CaTi used for capacitors
An O-shaped dielectric ceramic was used, and a ceramic green sheet for a dielectric substrate having a thickness of 0.3 to 0.5 mm was used.

先ず、本来の焼成温度である1300〜1350℃よりも低い
1240℃で約2時間焼成した。焼成はシートを20枚そのま
ま重ねて行った。なお、この温度を1230℃とすると、次
の本焼成においてくっつきを生じた。このように、一次
の焼成温度は、バインダーが焼成してしまい、しかもハ
ンドリングが可能となる程度に焼結する温度で、本焼成
よりも低い温度が必要である。
First, lower than the original firing temperature of 1300-1350 ° C
It was baked at 1240 ° C. for about 2 hours. The firing was performed by stacking 20 sheets as they were. When this temperature was set to 1230 ° C., sticking occurred in the next main firing. As described above, the primary sintering temperature is a temperature at which the binder is sintered and the sintering is performed to such an extent that handling is possible, and a lower temperature than the main sintering is required.

続いて、第1図のように、一次焼成された基板11とセ
ッター12を交互に重ねて1300℃で本焼成した。このセッ
ター12には、平滑な表面を有する99%高純度アルミナか
ら成る厚さ0.5〜1.0mmの平坦な板を用いた。
Subsequently, as shown in FIG. 1, the primary-baked substrates 11 and the setters 12 were alternately overlapped with each other and were finally baked at 1300 ° C. As the setter 12, a flat plate having a thickness of 0.5 to 1.0 mm and made of 99% high-purity alumina having a smooth surface was used.

これにより、平坦かつ平滑な表面の誘電体基板が得ら
れた。
As a result, a dielectric substrate having a flat and smooth surface was obtained.

また、セッターとして、前記誘電体材料と同じ組成の
シートを本焼成の温度よりも高い1350℃で焼成し、研磨
して平坦化した基板を用いても同様に平坦かつ平滑な表
面を有する誘電体基板が得られた。
In addition, as a setter, a sheet having the same composition as the dielectric material is fired at 1350 ° C., which is higher than the temperature of the main firing, and a dielectric having a flat and smooth surface is similarly used by using a polished and flattened substrate. A substrate was obtained.

本発明により得られた誘電体基板の反りを測定すると
次のようになっていた。2mmあたりの反りが従来平均で3
3μ、最大で53μであったものが、本発明によると平均
で9μ、最大で16μとなっていた(サンプル数10)。
The warpage of the dielectric substrate obtained according to the present invention was measured as follows. Warpage per 2mm is 3 on average
According to the present invention, 3 μ and 53 μ at the maximum were 9 μ and 16 μ at the maximum (10 samples) according to the present invention.

また、表面結晶粒径を調べてみると、出発材料で0.5
μであった粒径が99%の純度のアルミナ基板のセッター
を用いたときには3〜4μの粒径となっていた。また、
同一組成材料のセッターを用いると2〜3μの粒径とな
っていた。比較のために97%の純度のアルミナ基板を用
いると、3〜10μとなっており、同一組成のセッター、
あるいは高純度のアルミナ基板を用いる方が結晶の異常
成長を抑え、結晶が均一化し、緻密となる。その結果、
基板の表面表度はRmax=1μ(97%アルミナ基板ではRm
ax=5μ)と改善された。
Also, when examining the surface crystal grain size, the starting material
When a 99% pure alumina substrate setter was used, the particle size was 3-4 μm. Also,
When a setter of the same composition material was used, the particle size was 2-3 μm. For comparison, when an alumina substrate having a purity of 97% is used, the value is 3 to 10 μ, and a setter having the same composition,
Alternatively, when a high-purity alumina substrate is used, abnormal growth of the crystal is suppressed, and the crystal becomes uniform and dense. as a result,
The surface roughness of the substrate is Rmax = 1μ (Rm for 97% alumina substrate)
ax = 5μ).

また、電気的特性では、97%アルミナ基板をセッター
として使用した場合、ε=270、tanδ=0.12%であった
が、99%高純度アルミナセッターを用いると、ε=30
0、tanδ=0.05%と改善されていることが確認された。
In the electrical characteristics, when a 97% alumina substrate was used as a setter, ε = 270 and tan δ = 0.12%. However, when a 99% high-purity alumina setter was used, ε = 30.
0, it was confirmed that tan δ was improved to 0.05%.

〔効果〕〔effect〕

本発明によれば、焼成時に反り、くっつきの発生を防
止することができ、しかも多数の基板を同時に焼成でき
るので、生産性を大幅に向上させることができる。
According to the present invention, it is possible to prevent the occurrence of warpage and sticking during firing, and furthermore, since a large number of substrates can be fired simultaneously, the productivity can be greatly improved.

また、セッターへの拡散を防止できるので、電気的な
特性を向上させることができる。
Further, since diffusion to the setter can be prevented, electrical characteristics can be improved.

更に、結晶を緻密化させることができるので、結晶性
も大幅に改善される。
Furthermore, since the crystal can be densified, the crystallinity is also greatly improved.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の実施例を示す正面図である。 11……セラミック基板 12……セッター FIG. 1 is a front view showing an embodiment of the present invention. 11 …… Ceramic substrate 12 …… Setter

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】セラミックグリーンシートを多段に重ねて
所定の焼成温度よりも低い温度で焼成した後、該セラミ
ック基板を反応性の小さいセッターと交互に重ね、多段
に積層して所定の焼成温度で焼成することを特徴とする
セラミック基板の焼成方法。
1. After laminating ceramic green sheets in multiple stages and firing at a temperature lower than a predetermined firing temperature, the ceramic substrates are alternately stacked with setters having low reactivity, laminated in multiple stages, and stacked at a predetermined firing temperature. A method for firing a ceramic substrate, comprising firing.
【請求項2】該セッターが高純度アルミナ基板である請
求項第1項記載のセラミック基板の焼成方法。
2. The method according to claim 1, wherein said setter is a high-purity alumina substrate.
【請求項3】セラミックグリーンシートを多段に重ねて
所定の焼成温度よりも低い温度で焼成した後、該セラミ
ック基板を、該セラミック基板と同一組成のシートを所
定の焼成温度より高い温度で焼成して得たセッターと交
互に重ね、多段に積層して所定の焼成温度で焼成するこ
とを特徴とするセラミック基板の焼成方法。
3. A ceramic green sheet is stacked in multiple stages and fired at a temperature lower than a predetermined firing temperature, and the ceramic substrate is fired at a temperature higher than the predetermined firing temperature with a sheet having the same composition as the ceramic substrate. A ceramic substrate, which is alternately stacked with the setter obtained in this manner, stacked in multiple stages, and fired at a predetermined firing temperature.
JP1133473A 1989-05-26 1989-05-26 Ceramic substrate firing method Expired - Fee Related JP2720199B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1133473A JP2720199B2 (en) 1989-05-26 1989-05-26 Ceramic substrate firing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1133473A JP2720199B2 (en) 1989-05-26 1989-05-26 Ceramic substrate firing method

Publications (2)

Publication Number Publication Date
JPH02311370A JPH02311370A (en) 1990-12-26
JP2720199B2 true JP2720199B2 (en) 1998-02-25

Family

ID=15105600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1133473A Expired - Fee Related JP2720199B2 (en) 1989-05-26 1989-05-26 Ceramic substrate firing method

Country Status (1)

Country Link
JP (1) JP2720199B2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62176962A (en) * 1986-01-27 1987-08-03 松下電工株式会社 Method of sintering ceramic substrate
JPS63295480A (en) * 1987-05-27 1988-12-01 Nippon Shokubai Kagaku Kogyo Co Ltd Production of ceramic sheet

Also Published As

Publication number Publication date
JPH02311370A (en) 1990-12-26

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