JP2714526B2 - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JP2714526B2
JP2714526B2 JP5121198A JP12119893A JP2714526B2 JP 2714526 B2 JP2714526 B2 JP 2714526B2 JP 5121198 A JP5121198 A JP 5121198A JP 12119893 A JP12119893 A JP 12119893A JP 2714526 B2 JP2714526 B2 JP 2714526B2
Authority
JP
Japan
Prior art keywords
aluminum wire
wire
lead
lead frame
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5121198A
Other languages
Japanese (ja)
Other versions
JPH0669292A (en
Inventor
隆信 川内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP5121198A priority Critical patent/JP2714526B2/en
Publication of JPH0669292A publication Critical patent/JPH0669292A/en
Application granted granted Critical
Publication of JP2714526B2 publication Critical patent/JP2714526B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は、リードフレームを使用
して製造されるトランジスター又はＩＣ等のような電子
部品において、前記リードフレームにダイボンディング
した半導体チップと前記リードフレームにおけるリード
端子との間、又は、リードフレームにおける各リード端
子の相互間を、アルミニウムワイヤーにてワイヤーボン
ディングする方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component such as a transistor or an IC manufactured using a lead frame, which is used between a semiconductor chip die-bonded to the lead frame and a lead terminal of the lead frame. Alternatively, the present invention relates to a method of wire bonding between lead terminals of a lead frame with an aluminum wire.

【０００２】[0002]

【従来の技術】トランジスター又はＩＣ等のような電子
部品の製造に際しては、従来から良く知られているよう
に、半導体チップをダイボンディングするマウント部
と、該マウント部に向かって延びるリード端子とを一体
的に造形して成るリードフレームを使用し、このリード
フレームにおける各マウント部に半導体チップをダイボ
ンディングしたのち、この半導体チップと、リード端子
との間を、細い金属線によるワイヤーボンディングにて
接続し、次いで、前記半導体チップ及び金属線の部分を
合成樹脂製のモールド部にてパッケージしたのち、リー
ドフレームから切り離すようにしている。2. Description of the Related Art When manufacturing an electronic component such as a transistor or an IC, as is well known, a mount for die-bonding a semiconductor chip and a lead terminal extending toward the mount are known. Using a lead frame that is integrally molded, a semiconductor chip is die-bonded to each mounting part of this lead frame, and then the semiconductor chip and the lead terminals are connected by wire bonding using a thin metal wire. Then, after the semiconductor chip and the metal wire are packaged in a synthetic resin mold part, they are separated from the lead frame.

【０００３】また、前記ワイヤーボンディングには、金
又は銅ワイヤーを使用する場合と、アルミニウムワイヤ
ーを使用する場合とがあり、前者の金又は銅ワイヤーを
使用してのワイヤーボンディングには、比較的高い温度
に保持した状態で金又は銅ワイヤーを押圧することで接
合すると言う熱圧着方式が採用される。一方、後者のア
ルミニウムワイヤーを使用してのワイヤーボンディング
に際しては、これに熱を加えると、アルミニウムワイヤ
ーが弱くなると共に、酸化され易くなるので、専ら、熱
を加えることなく、アルミニウムワイヤーを、これに超
音波振動を付与しながら押圧することにより、この滑り
合いにて熱を発生し、この熱にて接合すると言う超音波
方式が作用される。[0003] The wire bonding includes a case using a gold or copper wire and a case using an aluminum wire, and the former wire bonding using a gold or copper wire is relatively expensive. A thermocompression bonding method in which gold or copper wires are joined by pressing them while maintaining the temperature is adopted. On the other hand, at the time of wire bonding using the latter aluminum wire, when heat is applied thereto, the aluminum wire is weakened and easily oxidized. By applying pressure while applying ultrasonic vibration, heat is generated by this sliding, and an ultrasonic method of joining with this heat is applied.

【０００４】[0004]

【発明が解決しようとする課題】しかし、アルミニウム
ワイヤーを、リードフレームにおけるリード端子に対し
て、当該アルミニウムワイヤーに超音波振動を付与しな
がら押圧することによって接合するに際しては、リード
端子の表面は比較的粗い平面状であり、アルミニウムワ
イヤーとの接触面積が小さいことにより、アルミニウム
ワイヤーに対して超音波振動を付与したときに、当該ア
ルミニウムワイヤーのリードフレーム端子に対する滑り
合いが悪くて、その間における発熱量が少ないから、リ
ード端子に対する接合強度が低くて、この接合が外れる
ことが多発し不良品の発生率が高いと言う問題がある。However, when joining an aluminum wire to a lead terminal of a lead frame by pressing the aluminum wire while applying ultrasonic vibration to the aluminum wire, the surfaces of the lead terminal are compared. The surface is rough and flat, and the contact area with the aluminum wire is small. When ultrasonic vibration is applied to the aluminum wire, the aluminum wire does not slide well on the lead frame terminal, and the amount of heat generated during that time Therefore, there is a problem that the bonding strength to the lead terminal is low, and this bonding is frequently released, and the occurrence rate of defective products is high.

【０００５】特に、リードフレームの表面には、当該リ
ードフレームを圧延するときに出来る無数の圧延筋条が
存在していて、この圧延筋条が、前記アルミニウムワイ
ヤーによる超音波方式のワイヤーボンディングに際し
て、当該アルミニウムワイヤーに付与する超音波振動の
方向と交差する方向に延びている場合には、アルミニウ
ムワイヤーが、超音波振動によって、前記圧延筋条を横
断するように擦り付けられることにより、当該アルミニ
ウムワイヤーの一部が、前記圧延筋条にて削り取られる
ことになるから、リード端子に対する接合強度が更に大
幅に低下することになる。[0005] In particular, on the surface of the lead frame, there are countless rolling streaks formed when the lead frame is rolled, and these rolling streaks are used for ultrasonic wire bonding with the aluminum wire. When extending in a direction intersecting with the direction of the ultrasonic vibration applied to the aluminum wire, the aluminum wire is rubbed by the ultrasonic vibration so as to cross the rolling streak, Since a part is cut off by the above-mentioned rolling streak, the joining strength with respect to the lead terminal is further greatly reduced.

【０００６】このために、アルミニウムワイヤーに付与
する超音波振動の方向を、前記圧延筋条と交差しないよ
うにしなければならないから、設計の自由度が大幅に制
約されるのである。また、先行技術としての特開昭５８
−３５９５０号公報は、リードフレームにおけるリード
端子に対するアルミニウムワイヤーの接合強度が、リー
ドフレームにおける表面粗さが圧延筋条等のために粗い
ことに起因して低下することを回避するために、前記リ
ードフレームの表面に、ニッケルメッキを施すことによ
って、その表面粗さを０．５ミクロン以下にすることを
提案している。For this reason, since the direction of the ultrasonic vibration applied to the aluminum wire must not cross the rolling streak, the degree of freedom in design is greatly restricted. Further, Japanese Patent Application Laid-Open No.
JP-A-35950 discloses a method for preventing the lead strength of an aluminum wire from being reduced with respect to a lead terminal in a lead frame to prevent the surface roughness of the lead frame from being reduced due to roughness caused by a rolling strip or the like. It has been proposed that the surface of the frame be plated with nickel to reduce the surface roughness to 0.5 microns or less.

【０００７】しかし、リードフレームの表面に、表面粗
さが０．５ミクロン以下になるまでニッケルメッキを施
すには、当該ニッケルメッキ層を、相当厚くしなければ
ならず、このニッケルメッキに長い時間を必要とするば
かりか、材料費が嵩むことになるから、コストの大幅な
アップを招来するのである。本発明は、アルミニウムワ
イヤーによる超音波方式のワイヤーボンディングに際し
て、アルミニウムワイヤーをリードフレームにおけるリ
ード端子に対して、前記のように問題を招来することな
く、確実且つ強固に接合できるようにしたワイヤーボン
ディング方法を提供することを技術的課題とするもので
ある。However, in order to perform nickel plating on the surface of the lead frame until the surface roughness becomes 0.5 μm or less, the nickel plating layer must be considerably thick, and this nickel plating takes a long time. Not only is required, but also the material cost increases, which leads to a significant increase in cost. The present invention relates to a wire bonding method that enables an aluminum wire to be securely and firmly bonded to a lead terminal of a lead frame without causing a problem as described above when performing ultrasonic wire bonding with an aluminum wire. Is to provide a technical problem.

【０００８】[0008]

【課題を解決するための手段】この技術的課題を達成す
るため本発明は、「リードフレームに一体的に造形した
リード端子の表面に対してアルミニウムワイヤーを、超
音波振動による押圧にて接合するようにしたワイヤーボ
ンディング方法において、前記リード端子の表面に、平
行に延びる複数本の筋目溝を刻設して、この筋目溝付き
表面に、前記アルミニウムワイヤーの少なくとも一端
を、当該筋目溝と略平行にした状態で押圧したのち、こ
のアルミニウムワイヤーに対して前記筋目溝に沿う方向
に超音波振動を付与する。」と言う方法にした。In order to achieve this technical object, the present invention provides a method of joining an aluminum wire to a surface of a lead terminal integrally formed on a lead frame by pressing by ultrasonic vibration. In the wire bonding method as described above, a plurality of parallel grooves are engraved on the surface of the lead terminal, and at least one end of the aluminum wire is substantially parallel to the parallel grooves on the surface with the grooves. Then, ultrasonic vibration is applied to the aluminum wire in a direction along the slit groove. "

【０００９】[0009]

【作 用】このように、リードフレームにおけるリー
ド端子の表面に、平行に延びる複数本の筋目溝を刻設す
ることにより、このリード端子の表面に対するアルミニ
ウムワイヤーの接合面積を増大することができると共
に、リードフレームの表面に元々存在する圧延筋条の方
向性を、前記複数本の筋目溝の刻設によって殆ど消失す
ることができる。[Work] By forming a plurality of parallel grooves extending in parallel on the surface of the lead terminal in the lead frame, the joining area of the aluminum wire to the surface of the lead terminal can be increased. In addition, the directionality of the rolling streaks originally existing on the surface of the lead frame can be almost eliminated by engraving the plurality of streaks.

【００１０】そこで、このリード端子における筋目溝付
き表面に対して、アルミニウムワイヤーの少なくとも一
端を、前記筋目溝と略平行にした状態で押圧したのち、
このアルミニウムワイヤーに対して前記筋目溝に沿う方
向に超音波振動を付与することにより、アルミニウムワ
イヤーは、前記各筋目溝によって削られることなく、各
筋目溝内に押し込まれるように潰れ変形して、リード端
子と広い面積で接触することになって、この間に、前記
超音波振動にて大きい熱を発生することができるから、
アルミニウムワイヤーをリード端子に対して、高い接合
強度をもって確実に接合することができるのである。Therefore, at least one end of the aluminum wire is pressed against the surface with the groove in the lead terminal in a state substantially parallel to the groove, and
By applying ultrasonic vibration to the aluminum wire in a direction along the groove, the aluminum wire is crushed and deformed so as to be pushed into each groove without being cut by the groove. Since it comes into contact with the lead terminal over a large area, a large amount of heat can be generated by the ultrasonic vibration during this time.
The aluminum wire can be securely bonded to the lead terminal with high bonding strength.

【００１１】[0011]

【発明の効果】このように、本発明によると、アルミニ
ウムワイヤーのリード端子に対する接合強度を確実にア
ップすることができて、アルミニウムワイヤーがリード
端子から離れることを確実に低減できるから、ワイヤー
ボンディングミスの発生率を大幅に低減できるのであ
り、しかも、アルミニウムワイヤーに付与する超音波振
動の方向と、リードフレームの表面における圧延筋条の
方向とを考慮する必要がないから、設計の自由度を大幅
に向上できる効果を有する。As described above, according to the present invention, the bonding strength of the aluminum wire to the lead terminal can be reliably increased, and the separation of the aluminum wire from the lead terminal can be reliably reduced. Can be greatly reduced, and it is not necessary to consider the direction of the ultrasonic vibration applied to the aluminum wire and the direction of the rolling streaks on the surface of the lead frame. It has an effect that can be improved.

【００１２】その上、リードフレームの表面に対してニ
ッケルメッキを施すに際しても、当該ニッケルメッキ
を、その表面粗さを０．５ミクロン以下にするまで施す
必要がなく、極く薄くニッケルメッキを施すだけで良い
から、コストの大幅な低減を図ることができる効果を有
する。In addition, when nickel plating is performed on the surface of the lead frame, it is not necessary to apply the nickel plating until the surface roughness is reduced to 0.5 μm or less. In this case, there is an effect that cost can be significantly reduced.

【００１３】[0013]

【実施例】以下、本発明の実施例を、電子部品の一つで
あるトランジスターを、リードフレームを使用して製造
する場合において、そのワイヤーボンディングに適用し
た場合の図面について説明する。図において符号１は、
素材の薄い金属板から打ち抜いたフープ状のリードフレ
ームを示し、このリードフレーム１には、リード端子２
ａ付きマウント部２と当該マウント部２に向かって延び
る二本のリード端子３，４とが、当該リードフレーム１
の長手方向に沿って適宜ピッチの間隔で一体的に造形さ
れている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiments of the present invention will be described below with reference to the drawings in which a transistor as one of electronic components is applied to wire bonding when a transistor is manufactured using a lead frame. In the figure, reference numeral 1 is
A hoop-shaped lead frame punched from a thin metal plate is shown.
a mounting section 2 and two lead terminals 3 and 4 extending toward the mounting section 2
Are formed integrally at appropriate pitch intervals along the longitudinal direction of.

【００１４】そして、前記リードフレーム１を、その長
手方向に移送するとき、先づ、その各リード端子３，４
の先端部を、上面を平面に形成した受けダイＢと、下面
に平行に延びる複数本の筋面溝Ｃ1 を形成したパンチＣ
とに挟み付けることにより、各リード端子３，４の表面
に、互いに平行に延びる複数本の筋目溝９を刻設する。When the lead frame 1 is transported in the longitudinal direction, firstly, the lead terminals 3, 4
Punch C to the tip portion, and a receiving die B forming the top surface in a plane to form a plurality of streaks surface grooves C 1 extending in parallel to the lower surface
A plurality of parallel grooves 9 extending in parallel with each other are formed on the surfaces of the lead terminals 3 and 4 by being sandwiched between them.

【００１５】この受けダイＢとパンチＣとの挟み付けに
て、各リード端子３，４の表面に、複数本の筋目溝９を
刻設することにより、前記各リード端子３，４の表面に
元々存在している圧延筋条の方向性を殆ど消失すること
ができるのであり、この各筋目溝９の深さ寸法Ｈは、リ
ードフレーム１の表面に元々存在している圧延筋条の深
さよりも大きくする。By sandwiching the receiving die B and the punch C, a plurality of groove grooves 9 are formed on the surface of each of the lead terminals 3 and 4 so that the surface of each of the lead terminals 3 and 4 is formed. The directionality of the originally existing rolling streaks can be almost eliminated, and the depth dimension H of each of the groove grooves 9 is larger than the depth of the originally existing rolling streaks on the surface of the lead frame 1. Also increase.

【００１６】次いで、前記リードフレーム１の各マウン
ト部２におけるリード端子２ａを、マウント部２の上面
が各リード端子３，４より低くなるように段状に折り曲
げたのち、各マウント部２の上面に、半導体チップ５を
ダイボンディングし、この半導体チップ５と、前記両リ
ード端子３，４との間を、細いアルミニウムワイヤー６
にて各々ワイヤーボンディングし、そして、前記半導体
チップ５及び各アルミニウムワイヤー６の部分を、合成
樹脂製のモールド部７にてパッケージしたのち、リード
フレーム１から切り離すことによって、トランジスター
を製造するのである。Next, the lead terminals 2a of the respective mounting portions 2 of the lead frame 1 are bent stepwise so that the upper surface of the mounting portion 2 is lower than the respective lead terminals 3 and 4, and then the upper surface of each mounting portion 2 is bent. Then, a semiconductor chip 5 is die-bonded, and a thin aluminum wire 6 is connected between the semiconductor chip 5 and the lead terminals 3 and 4.
Then, the semiconductor chip 5 and each aluminum wire 6 are packaged in a synthetic resin mold 7 and then separated from the lead frame 1 to manufacture a transistor.

【００１７】ところで、前記アルミニウムワイヤー６に
よるワイヤーボンディングに際しては、アルミニウムワ
イヤー６の先端を、前記ボンディングツール８の下降動
によって前記半導体チップ５に対して押圧した状態でボ
ンディングツール８に超音波振動を付与することで、金
属線６の一端を半導体チップ５に接合（ファーストボン
ディング）し、次いで、前記ボンディングツール８を、
各リード端子３，４の箇所まで移動し、このボンディン
グツール８の下降動にてアルミニウムワイヤー６を、各
リード端子３，４に対して押圧したのち、この状態で、
前記ボンディングツール８に対して超音波振動を付与す
ることによって、アルミニウムワイヤー６の他端をリー
ド端子３，４に接合（セカンドボンディング）するよう
にして行うのである。At the time of wire bonding with the aluminum wire 6, ultrasonic vibration is applied to the bonding tool 8 while the tip of the aluminum wire 6 is pressed against the semiconductor chip 5 by the downward movement of the bonding tool 8. Then, one end of the metal wire 6 is bonded to the semiconductor chip 5 (first bonding), and then the bonding tool 8 is
After moving to the positions of the lead terminals 3 and 4 and pressing the aluminum wire 6 against the lead terminals 3 and 4 by the downward movement of the bonding tool 8, in this state,
By applying ultrasonic vibration to the bonding tool 8, the other end of the aluminum wire 6 is bonded to the lead terminals 3 and 4 (second bonding).

【００１８】そして、前記アルミニウムワイヤー６の各
リード端子３，４に対する接合（セカンドボンディン
グ）に際しては、このアルミニウムワイヤー６の少なく
とも一端を、各リード端子３，４の表面における筋目溝
９と略平行にした状態で、前記ボンディングツール８に
対して、図５に矢印Ａで示すように、前記筋目溝９に沿
う方向に超音波振動を付与する。At the time of bonding (second bonding) of the aluminum wire 6 to each of the lead terminals 3 and 4, at least one end of the aluminum wire 6 is substantially parallel to the groove 9 on the surface of each of the lead terminals 3 and 4. In this state, an ultrasonic vibration is applied to the bonding tool 8 in a direction along the groove 9 as shown by an arrow A in FIG.

【００１９】すると、前記アルミニウムワイヤー６は、
前記各筋目溝９によって削られることなく、各筋目溝９
内に押し込まれるように潰れ変形して、各リード端子
３，４と広い面積で接触することになって、この間に、
前記超音波振動にて大きい熱を発生することができるか
ら、アルミニウムワイヤー６を各リード端子３，４に対
して、高い接合強度をもって確実に接合することができ
るのである。Then, the aluminum wire 6 is
Each of the grooves 9 is not cut by each of the grooves 9.
It is crushed and deformed so as to be pushed in, and comes into contact with each of the lead terminals 3 and 4 over a wide area.
Since a large amount of heat can be generated by the ultrasonic vibration, the aluminum wire 6 can be securely bonded to the lead terminals 3 and 4 with high bonding strength.

【００２０】なお、前記実施例は、トランジスターに適
用した場合の実施例について説明したが、本発明は、こ
れに限らず、リードフレームにおける一つのマウント部
にダイボンディングした半導体チップと、リードフレー
ムにおける多数本のリード端子との間をアルミニウムワ
イヤーにてワイヤーボンディングするようにした集積回
路にも適用できるのである。Although the above embodiment has been described with reference to the case where the present invention is applied to a transistor, the present invention is not limited to this. The present invention is not limited to this. The present invention can also be applied to an integrated circuit in which a large number of lead terminals are wire-bonded with aluminum wires.

【００２１】また、本発明は、一対のリード端子の相互
間を、過電流にて溶断するようにした安全ヒューズ線に
接続して成る過電流保護素子において、前記安全ヒュー
ズ線を、アルミニウムワイヤーによるワイヤーボンディ
ングにて設ける場合にも適用できる。図６は、この場合
の実施例を示すもので、リードフレーム１ａに、一対の
リード端子２ａ，３ａを一体的に造形し、この両リード
端子２ａ，３ａの表面の各々に複数本の筋目溝９ａを刻
設したのち、その間を、アルミニウムワイヤー６ａにて
ワイヤーボンディングしたのち、全体を合成樹脂製のモ
ールド７ａにてパッケージするようにしたものである。According to the present invention, there is provided an overcurrent protection element in which a pair of lead terminals is connected to a safety fuse wire which is blown by an overcurrent. The present invention can also be applied to a case where wire bonding is used. FIG. 6 shows an embodiment in this case, in which a pair of lead terminals 2a and 3a are integrally formed on a lead frame 1a, and a plurality of grooves are provided on each of the surfaces of the lead terminals 2a and 3a. After engraving 9a, wire bonding is performed with an aluminum wire 6a in the interval, and the whole is packaged with a synthetic resin mold 7a.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の実施例におけるリードフレームの斜視
図である。FIG. 1 is a perspective view of a lead frame according to an embodiment of the present invention.

【図２】本発明の実施例を示す平面図である。FIG. 2 is a plan view showing an embodiment of the present invention.

【図３】図２のIII −III 視断面図である。FIG. 3 is a sectional view taken along line III-III of FIG. 2;

【図４】図２のIV−IV視拡大断面図である。FIG. 4 is an enlarged sectional view taken along line IV-IV of FIG. 2;

【図５】本発明の実施例を示す斜視図である。FIG. 5 is a perspective view showing an embodiment of the present invention.

【図６】本発明における別の実施例を示す図である。FIG. 6 is a diagram showing another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１ リードフレーム ２ マウント部 ３，４ リード端子 ５ 半導体チップ ６ アルミニウムワイヤー ７ モールド部 ８ ボンディングツール ９ 筋目溝 Ｂ 受けダイ Ｃ パンチ DESCRIPTION OF SYMBOLS 1 Lead frame 2 Mount part 3, 4 Lead terminal 5 Semiconductor chip 6 Aluminum wire 7 Mold part 8 Bonding tool 9 Streak groove B Receiving die C Punch

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】一体的に造形したリード端子の表面に対し
てアルミニウムワイヤーを、超音波振動による押圧にて
接合するようにしたワイヤーボンディング方法におい
て、前記リード端子の表面に、平行に延びる複数本の筋
目溝を刻設して、この筋目溝付き表面に、前記アルミニ
ウムワイヤーの少なくとも一端を、当該筋目溝と略平行
にした状態で押圧したのち、このアルミニウムワイヤー
に対して前記筋目溝に沿う方向に超音波振動を付与する
ことを特徴とするワイヤーボンディング方法。1. A wire bonding method in which an aluminum wire is joined to the surface of a lead terminal integrally formed by pressing by ultrasonic vibration, the plurality of wires extending parallel to the surface of the lead terminal. After pressing at least one end of the aluminum wire on the surface with the groove in a state substantially parallel to the groove, a direction along the groove with respect to the aluminum wire is provided. A wire bonding method characterized by applying ultrasonic vibration to a wire.
JP5121198A 1992-06-17 1993-05-24 Wire bonding method Expired - Fee Related JP2714526B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5121198A JP2714526B2 (en) 1992-06-17 1993-05-24 Wire bonding method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4-157989 1992-06-17
JP15798992 1992-06-17
JP5121198A JP2714526B2 (en) 1992-06-17 1993-05-24 Wire bonding method

Publications (2)

Publication Number Publication Date
JPH0669292A JPH0669292A (en) 1994-03-11
JP2714526B2 true JP2714526B2 (en) 1998-02-16

Family

ID=26458617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5121198A Expired - Fee Related JP2714526B2 (en) 1992-06-17 1993-05-24 Wire bonding method

Country Status (1)

Country Link
JP (1) JP2714526B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4593518B2 (en) * 2006-05-26 2010-12-08 古河電気工業株式会社 Semiconductor device with fuse
JP5755601B2 (en) * 2012-06-07 2015-07-29 株式会社日立製作所 Power module and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0669292A (en) 1994-03-11

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