JP2697946B2 - Photo mask - Google Patents
Photo maskInfo
- Publication number
- JP2697946B2 JP2697946B2 JP10657390A JP10657390A JP2697946B2 JP 2697946 B2 JP2697946 B2 JP 2697946B2 JP 10657390 A JP10657390 A JP 10657390A JP 10657390 A JP10657390 A JP 10657390A JP 2697946 B2 JP2697946 B2 JP 2697946B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- shielding portion
- transparent substrate
- pattern
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は、フォトマスクに関し、特に、LSI製造工
程の光リソグラフィープロセスに用いられるフォトマス
クに関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask, and more particularly, to a photomask used in a photolithography process in an LSI manufacturing process.
［従来の技術］ 従来のフォトマスクについて、第６図〜第９図を用い
て述べる。第６図において、フォトマスク（60）は、透
明基板（61）上にCrの遮光部分（62）が形成されてい
る。[Prior Art] A conventional photomask will be described with reference to FIGS. 6 to 9. In FIG. 6, a photomask (60) has a light-shielding portion (62) of Cr formed on a transparent substrate (61).
以上の構成により、第６図において、紙面上方から図
示しない一様な強度分布を持つ光束がフォトマスク（6
0）へ入射する。透明基板（61）上に形成された遮光部
分（62）は光を遮断するので、透明基板（61）を通過し
た光束は、強度分布を伴ってフォトマスク（60）から出
射する。With the above configuration, in FIG. 6, a light flux having a uniform intensity distribution (not shown) is
0). Since the light shielding portion (62) formed on the transparent substrate (61) blocks light, the light beam passing through the transparent substrate (61) is emitted from the photomask (60) with an intensity distribution.
上記の出射光は、図示しないレンズ系を介して半導体
ウエハ上へ投影される。このときウエハ（70）上に得ら
れる二次元光強度マップを第７図に、断面強度を第８図
に示す。第７図に見られるように、透明基板（61）上の
パターン形状が矩形であっても、回折の影響で、ウエハ
（70）上の強度分布は丸くなってしまい、透明基板（6
1）のパターン形状を忠実に再現することは困難であ
る。また断面強度も、第８図に示すように、ガウシアン
型となり、透明基板（61）上の強度1.0のコントラスト
分布が悪化している。The emitted light is projected onto a semiconductor wafer via a lens system (not shown). At this time, a two-dimensional light intensity map obtained on the wafer (70) is shown in FIG. 7, and a sectional intensity is shown in FIG. As shown in FIG. 7, even if the pattern shape on the transparent substrate (61) is rectangular, the intensity distribution on the wafer (70) becomes round due to the influence of diffraction, and the transparent substrate (6
It is difficult to faithfully reproduce the pattern shape of 1). Also, as shown in FIG. 8, the cross-sectional intensity is of a Gaussian type, and the contrast distribution at an intensity of 1.0 on the transparent substrate (61) is deteriorated.
そのため、現像後のレジスト形状は第９図に示すよう
に、丸井戸型となる。第９図において、半導体ウエハ
（70）上のレジスト膜（71）に丸井戸型のホールパター
ン（72）が形成されている。Therefore, the resist shape after development is a round well type as shown in FIG. In FIG. 9, a round well type hole pattern (72) is formed in a resist film (71) on a semiconductor wafer (70).
［発明が解決しょうとする課題］ 従来のフォトマスクは以上のように構成されているの
で、透明基板上の矩形パターンをウエハ上に忠実に結像
させることができず、また、コントラスト劣化も著しい
などの問題点があった。[Problems to be Solved by the Invention] Since the conventional photomask is configured as described above, a rectangular pattern on a transparent substrate cannot be faithfully imaged on a wafer, and contrast is significantly deteriorated. There were problems such as.
この発明は上記の課題を解決するためになされたもの
で、透明基板上の矩形パターンをウエハに再現できると
ともに、高いコントラストを与えることのできるフォト
マスクを得ることを目的とする。The present invention has been made to solve the above-described problems, and has as its object to obtain a photomask capable of reproducing a rectangular pattern on a transparent substrate on a wafer and providing high contrast.
［課題を解決するための手段］ この発明に係るフォトマスクは、透明基板上に、パタ
ーン形成用遮光部と、このパターン形成用遮光部の辺に
配置されたシフター部と、パターン形成用遮光部のコー
ナー位置に形成された補正用遮光部とを備えている。[Means for Solving the Problems] A photomask according to the present invention comprises, on a transparent substrate, a light-shielding portion for pattern formation, a shifter portion arranged on a side of the light-shielding portion for pattern formation, and a light-shielding portion for pattern formation. And a light-shielding portion for correction formed at the corner position of.
［作 用］ この発明においては、パターン形成用遮光部の辺に配
置されたシフター部により従来より急峻なエッジをもっ
た光学像が得られるとともに、パターン形成用遮光部の
コーナー位置に配置された補正用遮光部によりコンタク
トホールの矩形性が改善される。[Operation] In the present invention, an optical image having a steeper edge than before can be obtained by the shifter portion arranged on the side of the pattern forming light shielding portion, and the optical image is arranged at a corner position of the pattern forming light shielding portion. The rectangular shape of the contact hole is improved by the light-shielding portion for correction.
［実施例］ 以下、この発明の一実施例について、第１図〜第５図
を用いて説明する。第１図において、フォトマスク（1
0）は、石英の透明基板（11）上に、パターン形成用遮
光部である第１の遮光部（12）、この第１の遮光部（1
2）の辺に沿って透明基板（11）と位相反転させたシフ
ター部（13）、第１の遮光部（12）のコーナー部に補正
用遮光部第２の遮光部（14）がそれぞれ形成されてい
る。Embodiment An embodiment of the present invention will be described below with reference to FIGS. 1 to 5. In FIG. 1, a photomask (1
Reference numeral 0) denotes a first light-shielding portion (12), which is a light-shielding portion for pattern formation, on a quartz transparent substrate (11), and the first light-shielding portion (1).
A shifter section (13) whose phase is inverted with respect to the transparent substrate (11) along the side of 2), and a correction light-blocking section and a second light-blocking section (14) are formed at the corners of the first light-blocking section (12), respectively. Have been.
以上の構成により、紙面上方から図示しない光が第１
図の透明基板（11）上へ入射する。この入射光は透明基
板（11）上のパターンにより明暗のコントラストを伴
い、フォトマスク（10）から紙面下方へ出射し、図示し
ないレンズ系を介してウエハ上へ結像する。このとき、
第１の遮光部（12）のコーナー部分に形成した第２の遮
光部（14）により結像パターンの角が回折のために丸み
をおびる現象を補正することができる。また、第１の遮
光部（12）の辺に沿って形成したシフター部（13）によ
り、結像パターンの辺がふくらむ現象を補正する。With the above configuration, light (not shown) from the top of the paper
Light is incident on the transparent substrate (11) in the figure. This incident light is accompanied by light and dark contrast by the pattern on the transparent substrate (11), exits from the photomask (10) downward on the paper, and forms an image on the wafer via a lens system (not shown). At this time,
The second light-shielding portion (14) formed at the corner of the first light-shielding portion (12) can correct the phenomenon that the corners of the imaging pattern are rounded due to diffraction. In addition, the shifter portion (13) formed along the side of the first light-shielding portion (12) corrects the phenomenon that the side of the imaging pattern bulges.
さて、このフォトマスク（10）を用いて得られる像の
強度マップを第２図に示す。この実施例によると、第２
図に見られるように、ウエハ（20）上の光パターンの矩
形性が増し、マスクの形状を、忠実に再現していること
がわかる。さらに強度分布の断面を第３図に示す。シフ
ター部（13）により、強度分布は鋭いピークとなってお
り、改善されていることがわかる。FIG. 2 shows an intensity map of an image obtained by using the photomask (10). According to this embodiment, the second
As shown in the figure, it can be seen that the rectangularity of the light pattern on the wafer (20) is increased, and the shape of the mask is faithfully reproduced. FIG. 3 shows a cross section of the intensity distribution. Due to the shifter portion (13), the intensity distribution has a sharp peak, which indicates that the intensity distribution has been improved.
第４図は現像後のウエハ（20）上のレジストパターン
を示し、半導体ウエハ（20）上のレジスト膜（21）に形
成されたホールパターン（22）は、光強度分布の矩形性
を反映して角井戸型となる。FIG. 4 shows a resist pattern on the wafer (20) after development. The hole pattern (22) formed in the resist film (21) on the semiconductor wafer (20) reflects the rectangularity of the light intensity distribution. It becomes a square well type.
次に第５図を用いて、上記実施例のフォトマスクの製
造方法について述べる。第５図（ａ）においてガラス基
板（50）上にCr膜（51）とレジスト膜（52）戸を形成す
る。同図（ｂ）において、露光，現像を行う。同図
（ｃ）において、Cr膜（51）をエッチングし、レジスト
膜（52）を除去する。同図（ｄ）において、第２のレジ
スト膜（53）を形成する。最後に同図（ｅ）において、
露光現像を行い、レジストによるシフター部（54）を形
成する。Next, a method for manufacturing the photomask of the above embodiment will be described with reference to FIG. In FIG. 5A, a Cr film (51) and a resist film (52) are formed on a glass substrate (50). In FIG. 3B, exposure and development are performed. In FIG. 1C, the Cr film (51) is etched to remove the resist film (52). In FIG. 4D, a second resist film (53) is formed. Finally, in FIG.
Exposure and development are performed to form a shifter portion (54) using a resist.
なお、上記実施例は、光リソグラフィー工程について
述べたが、Ｘ線リソグラフィー工程などに対しても同様
の効果を奏する。Although the above embodiment has been described with reference to the photolithography process, the same effects can be obtained with respect to the X-ray lithography process and the like.
また、上記の実施例では、Crによるパターンについて
述べたがMoS1など他の不透明な材質のものでもよい。In the above embodiment has been described pattern by Cr may be of other opaque material such as MoS 1.
さらに、上記実施例は、シフター材としてレジストパ
ターンを用いたが、ガラスなど他の透明な材質のもので
もよい。Further, in the above embodiment, the resist pattern is used as the shifter material, but another transparent material such as glass may be used.
また、上記実施例では、ネガ型レジストに対して適用
した場合について述べたが、同じ構成のマスクをポジ型
レジストに対して適用すると、ドットパターンを形成す
ることができる。In the above embodiment, the case where the present invention is applied to a negative resist is described. However, if a mask having the same configuration is applied to a positive resist, a dot pattern can be formed.
［発明の効果］ 以上のように、この発明によれば、第１の遮光部のコ
ーナー部に第２の遮光部を設け、辺の部分にシフター部
を形成したので、マスクパターンに忠実な矩形で、鋭い
ピークの像が得られ、これによるレジストパターンも良
好な矩形パターンが得られるという効果がある。[Effect of the Invention] As described above, according to the present invention, the second light-shielding portion is provided at the corner of the first light-shielding portion, and the shifter portion is formed at the side, so that the rectangular shape faithful to the mask pattern is provided. Thus, an image having a sharp peak is obtained, and the resulting resist pattern has an effect of obtaining a good rectangular pattern.
第１図〜第５図はこの発明の一実施例を示し、第１図は
平面図、第２図は像の光強度マップ線図、第３図は像の
光強度断面線図、第４図はレジストパターンの斜視図、
第５図は製造工程を示す断面図である。 第６図〜第９図は従来のフォトマクスを示し、第６図は
平面図、第７図は像の光強度マップ線図、第８図は光強
度の断面線図、第９図はレジストパターンの斜視図であ
る。 （10）……フォトマクス、（11）……透明基板、 （12）……パターン形成用遮光部、（13）……シフター
部、 （14）……補正用遮光部。 なお、各図中、同一符号は同一又は相当部分を示す。1 to 5 show an embodiment of the present invention. FIG. 1 is a plan view, FIG. 2 is a light intensity map diagram of an image, FIG. The figure is a perspective view of the resist pattern,
FIG. 5 is a sectional view showing the manufacturing process. 6 to 9 show a conventional photo mask, FIG. 6 is a plan view, FIG. 7 is a light intensity map diagram of an image, FIG. 8 is a cross-sectional diagram of light intensity, and FIG. It is a perspective view of a pattern. (10) Photomask, (11) Transparent substrate, (12) Light-shielding part for pattern formation, (13) Shifter part, (14) Light-shielding part for correction. In the drawings, the same reference numerals indicate the same or corresponding parts.
Claims (1)
回路パターン形成用遮光部と、前記回路パターン形成用
遮光部のコーナー部の前記透明基板上に形成され、露光
用光の回折による前記回路パターン形成用遮光部の投影
像の変形を補正する補正用遮光部と、前記回路パターン
形成用遮光部の辺に沿って前記透明基板に形成され、露
光用光を位相反転させるシフター部とを備えたフォトマ
スク。1. A transparent substrate, a light-shielding portion for forming a circuit pattern formed on the transparent substrate, and a corner of the light-shielding portion for forming a circuit pattern formed on the transparent substrate and formed by diffraction of light for exposure. A correction light-shielding portion that corrects the deformation of the projected image of the circuit pattern formation light-shielding portion, and a shifter portion that is formed on the transparent substrate along a side of the circuit pattern formation light-shielding portion and that inverts the phase of exposure light. Photo mask with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10657390A JP2697946B2 (en) | 1990-04-24 | 1990-04-24 | Photo mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10657390A JP2697946B2 (en) | 1990-04-24 | 1990-04-24 | Photo mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH045656A JPH045656A (en) | 1992-01-09 |
| JP2697946B2 true JP2697946B2 (en) | 1998-01-19 |
Family
ID=14436987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10657390A Expired - Lifetime JP2697946B2 (en) | 1990-04-24 | 1990-04-24 | Photo mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2697946B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4902899A (en) * | 1987-06-01 | 1990-02-20 | International Business Machines Corporation | Lithographic process having improved image quality |
| JPH03263045A (en) * | 1990-03-14 | 1991-11-22 | Fujitsu Ltd | Mask for photolightgraphy and production thereof |
-
1990
- 1990-04-24 JP JP10657390A patent/JP2697946B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH045656A (en) | 1992-01-09 |
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