JP2684622B2 - Aluminum alloy material for wiring of semiconductor devices - Google Patents
Aluminum alloy material for wiring of semiconductor devicesInfo
- Publication number
- JP2684622B2 JP2684622B2 JP1117299A JP11729989A JP2684622B2 JP 2684622 B2 JP2684622 B2 JP 2684622B2 JP 1117299 A JP1117299 A JP 1117299A JP 11729989 A JP11729989 A JP 11729989A JP 2684622 B2 JP2684622 B2 JP 2684622B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- alloy
- film
- aluminum alloy
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体装置の配線用アルミニウム合金材料
に係り、特にその組成に関するものである。TECHNICAL FIELD The present invention relates to an aluminum alloy material for wiring of a semiconductor device, and more particularly to its composition.
（従来の技術） 従来、このような分野の先行技術としては、例えば、
特開昭62-234344号に記載されるものがあった。(Prior Art) Conventionally, as prior art in such a field, for example,
There was one described in JP-A-62-234344.
従来のスパッタ装置に用いられるアルミニウム合金タ
ーゲットの組成としては、純Al、並びにSiを添加したAl
-Si、更には純Al若しくはAl-SiにCu,Mg,Ti,Pd等のいず
れか一つの元素を添加したもの、あるいは二つ以上添加
したものとがあった。そして、上記Al合金組成をターゲ
ットに用いたスパッタ装置により、各種基板上へ成膜し
ていた。その一例として、半導体素子へ応用した例を以
下に示す。As the composition of the aluminum alloy target used in the conventional sputtering apparatus, pure Al and Al containing Si are added.
-Si, moreover, pure Al or Al-Si with one of the elements such as Cu, Mg, Ti and Pd added, or with two or more added. Then, a film was formed on various substrates by a sputtering apparatus using the above Al alloy composition as a target. As an example thereof, an example applied to a semiconductor element will be shown below.
第２図に示すように、DCマグネトロンスパッタ装置の
中にトランジスタ、キャパシタ等の素子を形成したSi基
板１を入れ、Arガスを導入してそのガス圧を（１〜10mm
Torr）に制御した後、DC電力をAl-2％Siターゲット６に
印加し、Si基板１上の素子の上に、膜厚１μｍのAl-2％
Si膜を堆積する。次いで、パターン形成することにより
Al配線を得る。As shown in FIG. 2, the Si substrate 1 on which elements such as transistors and capacitors are formed is placed in a DC magnetron sputtering apparatus, Ar gas is introduced, and the gas pressure is adjusted to (1 to 10 mm).
After controlling to Torr), DC power is applied to the Al-2% Si target 6 to deposit Al-2% with a film thickness of 1 μm on the element on the Si substrate 1.
Deposit Si film. Then, by patterning
Get Al wiring.
第２図において、２は高周波バイアスプレート兼ヒー
タブロック、３はサーモカップル、４は高周波マッチン
グ装置、５はアノード、６はターゲットである。In FIG. 2, 2 is a high frequency bias plate / heater block, 3 is a thermocouple, 4 is a high frequency matching device, 5 is an anode, and 6 is a target.
（発明が解決しようとする課題） しかしながら、従来の半導体装置におけるAl-Si配線
は、配線幅の微細化に伴い、エレクトロマイグレーショ
ン不良が顕著となったり、熱処理によるAlヒロックの発
生が原因で、多層配線の層間ショート不良を引起し易い
という問題点があった。(Problems to be Solved by the Invention) However, the Al-Si wiring in the conventional semiconductor device has a multi-layered structure due to the prominent electromigration failure or the generation of Al hillocks due to heat treatment as the wiring width becomes finer. There is a problem that an interlayer short circuit defect of the wiring is easily caused.
ここで、エレクトロマイグレーションとはAl原子が高
電流密度下で電子と衝突することにより、運動エネルギ
ーを得て電子の動く方向に移動するために、Al原子の移
動した跡に原子空孔（ボイド）が発生し、その結果、配
線の断面積が減少し、電流密度が更に大きくなり、ジュ
ール熱などによる温度上昇が生じてボイドの成長がます
ます加速され、ついには断線に至る現象である。Here, electromigration means that Al atoms collide with electrons at a high current density to obtain kinetic energy and move in the electron moving direction. Occurs, and as a result, the cross-sectional area of the wiring decreases, the current density further increases, the temperature rises due to Joule heat, etc., and void growth is further accelerated, eventually leading to disconnection.
また、ヒロックとは、上記エレクトロマイグレーショ
ンにより移動したAl原子が表面へ突出し、突起を形成し
たものや、熱処理を受けた際にAl配線の応力が緩和され
る結果、突起を形成するものの両者を意味する。In addition, hillock means both those in which Al atoms moved by the electromigration project to the surface and form a projection, and those in which a projection is formed as a result of stress relaxation of the Al wiring when subjected to heat treatment. To do.
本発明は、従来のAl-Si合金膜を半導体素子の配線に
適用した場合に起こるエレクトロマイグレーション不良
とヒロックによる不良を除去し、信頼性の高い半導体装
置の配線用アルミニウム合金材料を提供することを目的
とする。The present invention eliminates electromigration defects and hillock defects that occur when a conventional Al-Si alloy film is applied to the wiring of a semiconductor element, and provides a highly reliable aluminum alloy material for wiring of a semiconductor device. To aim.
（課題を解決するための手段） 本発明は、上記目的を達成するために、半導体装置の
配線用アルミニウム合金材料として、Alを母体とするAl
合金であって、これに添加する元素として、Siを0.001
重量％〜3.0重量％、Cuを0.1重量％〜4.0重量％、Hfを
0.002重量％〜0.8重量％の全てを添加した４元素系Al合
金の組成を得るようにしたものである。(Means for Solving the Problems) In order to achieve the above object, the present invention provides an aluminum-based aluminum alloy material for a semiconductor device, which comprises Al as a base material.
It is an alloy, and as an element added to this, Si is 0.001
Wt% to 3.0 wt%, Cu 0.1 wt% to 4.0 wt%, Hf
The composition of the four-element Al alloy containing 0.002% by weight to 0.8% by weight is added.
（作用） 本発明によれば、上記したように、Al-Si組成合金にC
u,Hfの２元素を添加してAl-Si-Cu-Hfの４元素系Al合金
としたので、これを半導体装置の配線材料として用いる
と、エレクトロマイグレーション耐性の向上を図ること
ができる。(Operation) According to the present invention, as described above, C is added to the Al-Si composition alloy.
Since two elements of u and Hf are added to form a four-element Al alloy of Al-Si-Cu-Hf, if this is used as a wiring material of a semiconductor device, electromigration resistance can be improved.
（実施例） 以下、本発明の実施例について図面を参照しながら詳
細に説明する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
本発明のアルミニウム合金材料は、スパッタリング又
は真空蒸着により半導体装置の配線材料として用いられ
る。そして、Alを母体とするAl合金であって、これに添
加する元素として、Siを0.001重量％〜3.0重量％、Cuを
0.1重量％〜4.0重量％、Hfを0.002重量％〜0.8重量％の
全てを添加した４元素系Al合金の組成を有することを特
徴としている。The aluminum alloy material of the present invention is used as a wiring material of a semiconductor device by sputtering or vacuum deposition. Then, it is an Al alloy having Al as a base, and 0.001 wt% to 3.0 wt% of Si and Cu are added as elements to be added to this.
It is characterized by having a composition of a four-element Al alloy to which 0.1 wt% to 4.0 wt% and Hf of 0.002 wt% to 0.8 wt% were all added.
本発明の合金組成のSi添加量の下限が0.001重量％と
なっているのは、この配線の下部にバリアメタルを敷く
ような場合には、微量でよいからである。しかし一般的
には、アルミニウムのスパイク防止のためにSiの添加が
必要である。このSiの添加量が3.0重量％以上になる
と、配線の電気抵抗が増加して好ましくない。また、Cu
の添加量の下限が0.1重量％となっているのは、この値
がストレスマイグレーションの寿命を改善できる最小濃
度であるという理由による。逆に、Cuの添加量が4.0重
量％以上になると、Al中へのCuの均一分布がくずれてCu
が偏析する。また、配線のエッチングも困難になる。更
に、Hfを0.002重量％〜0.8重量％にするのは、この値が
エレクトロマイグレーションの防止に特に有効であると
ともに、Hfの添加量が0.8重量％以上になると、その製
造が困難になってくるからである。The lower limit of the amount of Si added to the alloy composition of the present invention is 0.001% by weight because when a barrier metal is laid under the wiring, a small amount is sufficient. However, it is generally necessary to add Si to prevent aluminum spikes. When the amount of Si added is 3.0% by weight or more, the electrical resistance of the wiring increases, which is not preferable. Also, Cu
The lower limit of the amount of addition of 0.1% by weight is because this value is the minimum concentration that can improve the life of stress migration. On the contrary, when the amount of Cu added is 4.0% by weight or more, the uniform distribution of Cu in Al collapses and Cu
Segregates. In addition, it becomes difficult to etch the wiring. Furthermore, Hf of 0.002 wt% to 0.8 wt% is particularly effective for preventing electromigration, and when the amount of Hf added is 0.8 wt% or more, its production becomes difficult. Because.
以下、本発明の合金材料を適用した場合の有意性につ
いて説明する。The significance of applying the alloy material of the present invention will be described below.
まず、Al-1重量％Si-0.5重量％Cu-0.02重量％Hfから
なる組成のAl合金ターゲットを、第２図に示すDCマグネ
トロンスパッタ装置に取付け、そのベース圧を２×10-7
Torr以下になるように真空排気した後、Arガスを導入
し、装置内のガス圧を5mmTorrに制御する。First, an Al alloy target having a composition of Al-1 wt% Si-0.5 wt% Cu-0.02 wt% Hf was attached to the DC magnetron sputtering apparatus shown in FIG. 2, and its base pressure was set to 2 × 10 -7.
After evacuating to less than Torr, Ar gas is introduced to control the gas pressure inside the device to 5 mmTorr.
次に、SiO2膜を堆積させたSi基板１を、100℃に加熱
しながら、10KWのDC電力をターゲット（カソード）６に
印加し、SiO2膜上にAl-Si-Cu-Hf膜を１μｍ堆積させ
る。それから、フォトリソ及びエッチングによりパター
ンを形成した後、窒素ガス中で、400℃,30分の熱処理を
行う。Next, while heating the Si substrate 1 on which the SiO 2 film is deposited to 100 ° C., a DC power of 10 KW is applied to the target (cathode) 6 to form an Al-Si-Cu-Hf film on the SiO 2 film. Deposit 1 μm. Then, after forming a pattern by photolithography and etching, heat treatment is performed in nitrogen gas at 400 ° C. for 30 minutes.
最後に、Al-Si-Cu-Hf膜上に保護膜としてのPSG膜を堆
積させる。Finally, a PSG film as a protective film is deposited on the Al-Si-Cu-Hf film.
このAl-Si-Cu-Hf膜の合金配線材料としてのエレクト
ロマイグレーション寿命を第１図に示す。The electromigration life of the Al-Si-Cu-Hf film as an alloy wiring material is shown in FIG.
ここで、MTTFは配線幅1.0μｍの配線の平均寿命（時
間）であり、電流密度５×106A/cm2、配線温度200℃の
試験条件下における結果である。比較のために、Al-0.7
重量％Si、Al-1重量％Si-0.5重量％Cu、及び本発明にお
けるAl-1重量％Si-0.5重量％Cu-0.02重量％Hfの合金配
線材料の場合を示している。Here, MTTF is an average life (hour) of a wiring having a wiring width of 1.0 μm, and is a result under test conditions of a current density of 5 × 10 6 A / cm 2 and a wiring temperature of 200 ° C. For comparison, Al-0.7
It shows the case of alloy wiring material of wt% Si, Al-1 wt% Si-0.5 wt% Cu, and Al-1 wt% Si-0.5 wt% Cu-0.02 wt% Hf in the present invention.
この図より明らかなように、Al-Si-Cu-Hf膜は、Al-Si
膜,Al-Si-Cu膜を比較してはるかに長寿命である。As is clear from this figure, the Al-Si-Cu-Hf film is
Compared with the film, Al-Si-Cu film, the life is much longer.
従って、本発明のAl-Si-Cu-Hf膜は、半導体装置の配
線用材料として用いると、従来組成のAl合金膜に比して
より良好な特性を示す。Therefore, the Al-Si-Cu-Hf film of the present invention, when used as a wiring material for a semiconductor device, exhibits better characteristics than an Al alloy film having a conventional composition.
なお、本発明は上記実施例に限定されるものではな
く、本発明の趣旨に基づいて種々の変形が可能であり、
これらを本発明の範囲から排除するものではない。It should be noted that the present invention is not limited to the above embodiment, and various modifications are possible based on the gist of the present invention.
They are not excluded from the scope of the present invention.
（発明の効果） 以上、詳細に説明したように、本発明によれば、Al合
金をAl-Si-Cu-Hfの組成からなる４元素系合金としたの
で、半導体装置の配線材料としてこれを用いると、エレ
クトロマイグレーション耐性の向上を図ることができ
る。(Effects of the Invention) As described in detail above, according to the present invention, the Al alloy is a four-element alloy having a composition of Al-Si-Cu-Hf. When used, electromigration resistance can be improved.
第１図は本発明の半導体装置の配線用アルミニウム合金
材料のエレクトロマイグレーション寿命を示す図、第２
図はDCマグネトロンスパッタ装置の構成図である。FIG. 1 is a diagram showing the electromigration life of an aluminum alloy material for wiring of a semiconductor device of the present invention, FIG.
The figure is a block diagram of a DC magnetron sputtering apparatus.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 野村 淳 東京都港区虎ノ門１丁目７番12号 沖電 気工業株式会社内 (72)発明者 澤田 進 茨城県北茨城市華川町臼場187番地４号 日本鉱業株式会社内 (56)参考文献 特開 昭54−20681（ＪＰ，Ａ) 特開 昭62−235451（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Jun Nomura 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd. No. 4 in Japan Mining Co., Ltd. (56) Reference JP 54-20681 (JP, A) JP 62-235451 (JP, A)
Claims (1)
元素として、Siを0.001重量％〜3.0重量％、Cuを0.1重
量％〜4.0重量％、Hfを0.002重量％〜0.8重量％の全て
を添加した４元素系Al合金の組成を有することを特徴と
する半導体装置の配線用アルミニウム合金材料。1. An Al alloy having Al as a base, and 0.001 wt% to 3.0 wt% of Si, 0.1 wt% to 4.0 wt% of Cu, and 0.002 wt% to 0.8 wt% of Hf as elements added to the Al alloy. An aluminum alloy material for wiring of a semiconductor device, which has a composition of a four-element Al alloy containing all of the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1117299A JP2684622B2 (en) | 1989-05-12 | 1989-05-12 | Aluminum alloy material for wiring of semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1117299A JP2684622B2 (en) | 1989-05-12 | 1989-05-12 | Aluminum alloy material for wiring of semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02297937A JPH02297937A (en) | 1990-12-10 |
| JP2684622B2 true JP2684622B2 (en) | 1997-12-03 |
Family
ID=14708315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1117299A Expired - Lifetime JP2684622B2 (en) | 1989-05-12 | 1989-05-12 | Aluminum alloy material for wiring of semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2684622B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5747360A (en) * | 1993-09-17 | 1998-05-05 | Applied Materials, Inc. | Method of metalizing a semiconductor wafer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5917853B2 (en) * | 1977-07-18 | 1984-04-24 | 株式会社東芝 | semiconductor equipment |
| JPS62235451A (en) * | 1986-04-03 | 1987-10-15 | Nippon Mining Co Ltd | Al alloy for semiconductor wiring material |
-
1989
- 1989-05-12 JP JP1117299A patent/JP2684622B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02297937A (en) | 1990-12-10 |
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