JP2660010B2 - High dielectric constant porcelain composition and ceramic capacitor - Google Patents
High dielectric constant porcelain composition and ceramic capacitorInfo
- Publication number
- JP2660010B2 JP2660010B2 JP63214858A JP21485888A JP2660010B2 JP 2660010 B2 JP2660010 B2 JP 2660010B2 JP 63214858 A JP63214858 A JP 63214858A JP 21485888 A JP21485888 A JP 21485888A JP 2660010 B2 JP2660010 B2 JP 2660010B2
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- Prior art keywords
- dielectric constant
- high dielectric
- porcelain composition
- constant porcelain
- composition
- Prior art date
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- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は高誘電率磁器組成物に係り、特に寿命特性に
優れたPbを主成分とする高誘電率磁器組成物及びセラミ
ックコンデンサに関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial application field) The present invention relates to a high dielectric constant porcelain composition, and particularly to a high dielectric constant porcelain composition mainly composed of Pb having excellent life characteristics. It relates to a ceramic capacitor.
(従来の技術) 従来から各種の誘電体材料が研究されている。(Prior Art) Conventionally, various dielectric materials have been studied.
従来から知られている高誘電率磁器組成物としてチタ
ン酸バリウムをベースとして、これに錫酸鉛、ジルコン
酸鉛、チタン酸鉛等を固溶したものがある。確かに誘電
率の高いものを得ることはできるが、誘電率が高くなる
誘電率温度係数(T.C.C.)が大きくなり、また、バイア
ス電界依存性も大きくなってしまうという問題があっ
た。さらに、チタン酸バリウム系の材料の焼成温度は13
00〜1400℃程度と高温であり、電極材料として必然的に
白金、パラジウム等の高温で耐えうる高価な材料を用い
なければならず、コスト高の原因となる。A conventionally known high dielectric constant porcelain composition is based on barium titanate, in which lead stannate, lead zirconate, lead titanate or the like is dissolved. Certainly, a material having a high dielectric constant can be obtained, but there has been a problem that the dielectric constant has a large temperature coefficient of permittivity (TCC) and the bias electric field dependency also increases. Further, the firing temperature of the barium titanate-based material is 13
The temperature is as high as about 00 to 1400 ° C., and an expensive material such as platinum and palladium that can withstand a high temperature must be used as an electrode material, which causes an increase in cost.
このチタン酸バリウム系の問題点を解消すべく、各種
組成物の研究がなされている。例えば鉄ニオブ酸鉛を主
体としたもの(特開昭57−57204号)、マグネシウム・
ニオブ酸鉛を主体としたもの(特開昭55−51758)、マ
グネシウム・タングステン酸鉛を主体としたもの(特開
昭52−21699号)等がある。鉄ニオブ酸鉛を主体とした
ものは、CR値の焼成温度による変化が大きく、特に高温
におけるCR値の低下が大きいという問題点がある。マグ
ネシウム・ニオブ酸鉛を主体としたものは焼成温度が比
較的高く、また、マグネシウム・タングステン酸鉛を主
体としたものは、CR値が大きいと誘電率が小さく、誘電
率が大きいとCR値が小さいという問題点が有った。さら
にこれらの材料のT.C.C.はチタン酸バリウム系より優れ
てはいるものの十分ではない。In order to solve the problems of the barium titanate, various compositions have been studied. For example, those mainly composed of lead iron niobate (JP-A-57-57204), magnesium
There are those mainly composed of lead niobate (JP-A-55-51758) and those mainly composed of magnesium / lead tungstate (JP-A-52-21699). Those mainly composed of lead iron niobate have a problem that the CR value greatly changes depending on the sintering temperature, and particularly, the CR value decreases greatly at high temperatures. Those mainly composed of magnesium and lead niobate have relatively high firing temperatures, and those mainly composed of magnesium and lead tungstate have a low dielectric constant when the CR value is large and a low CR value when the dielectric constant is large. There was a problem of being small. Furthermore, the TCC of these materials is better than barium titanate, but not enough.
さらに、マグネシウムニオブ酸鉛とチタン酸鉛との固
溶体で必要に応じ鉛の一部をバリウム,ストロンチウ
ム,カルシウムで置換した材料についても研究されてい
る(特開昭55−121959号)。しかしながらこの材料のT.
C.C.は−25〜85℃で最良のものでも−59.8%であり、十
分とは言えない。さらに、コンデンサ材料として最も重
要なCR値については述べられず、コンデンサ材料として
の有用性は明らかではない。Further, a study has been made on a solid solution of lead magnesium niobate and lead titanate in which part of lead is replaced by barium, strontium, or calcium as necessary (Japanese Patent Application Laid-Open No. 55-121959). However, the T.
The best CC at −25 to 85 ° C. is −59.8%, which is not sufficient. Further, the most important CR value as a capacitor material is not described, and its usefulness as a capacitor material is not clear.
また特開昭57−25607号にはマグネシウム・ニオブ酸
鉛と亜鉛ニオブ酸鉛との固溶体の材料についても研究さ
れている。しかしながらCR値、及びT.C.C.については述
べられておらず、コンデンサ材料としての有用性は明ら
かではない。JP-A-57-25607 also studies a material of a solid solution of lead magnesium niobate and lead zinc niobate. However, the CR value and TCC are not described, and its usefulness as a capacitor material is not clear.
これらの問題点を考慮して誘電率が大きく、かつその
温度係数の小さい高誘電率磁器組成物が発明されている
(特開昭61−155245)。In consideration of these problems, a high dielectric constant porcelain composition having a large dielectric constant and a small temperature coefficient has been invented (JP-A-61-155245).
コンデンサ材料には誘電率、T.C.C.,誘電損失,誘電
バイアス電界依存性,容量抵抗積等の優れた電気的特性
が要求されるが、さらにコンデンサの信頼性、つまり寿
命特性はそれ以上に重要である。しかしながら、優れた
電気的特性を有しかつ過酷な条件下(高温、高湿、一定
電圧印加)でも特性の劣化の少ない高誘電率磁器組成物
はまだ得られていない。Capacitor materials are required to have excellent electrical characteristics such as permittivity, TCC, dielectric loss, dielectric bias electric field dependence, and capacitance-resistance product, but the reliability, that is, the life characteristics of the capacitor is even more important. . However, a high dielectric constant porcelain composition having excellent electrical characteristics and having less deterioration in characteristics even under severe conditions (high temperature, high humidity, and application of a constant voltage) has not yet been obtained.
(発明が解決しようとする課題) 本発明は以上の点を考慮してなされたもので、寿命特
性に優れ信頼性の優れた高誘電率磁器組成物及びセラミ
ックコンデンサを提供することを目的とする。(Problems to be Solved by the Invention) The present invention has been made in consideration of the above points, and has as its object to provide a high dielectric constant ceramic composition and a ceramic capacitor having excellent life characteristics and excellent reliability. .
(課題を解決するための手段及び作用〕 本発明はPbを構成元素として含有するペロブスカイト
系高誘電率磁器組成物に、イットリウム(Y)をY2O3に
換算して重量比で100乃至50000ppm添加含有することを
特徴とした高誘電率磁器組成物であり、これを誘電体層
として用いることにより優れたセラミックコンデンサを
設けることができる。(Means and Actions for Solving the Problems) The present invention relates to a perovskite-based high dielectric constant porcelain composition containing Pb as a constituent element, wherein yttrium (Y) is converted to Y 2 O 3 by a weight ratio of 100 to 50,000 ppm. It is a high dielectric constant porcelain composition characterized by being added and contained, and by using this as a dielectric layer, an excellent ceramic capacitor can be provided.
イットリウムをY2O3に換算して重量比で100≦Y2O3≦5
0000ppm添加すると高温,高湿状態においても常時電圧
を印加された誘電体の電気的特性(特に絶縁抵抗)はほ
とんど劣化しない。イットリウムは1000ppm以上の添加
で効果をあらわすが、特に500ppm以上の添加で優れた効
果を奏する。50000ppmを超えるとかえって寿命特性を劣
化させる。Yttrium is converted to Y 2 O 3 and the weight ratio is 100 ≦ Y 2 O 3 ≦ 5
When 0000 ppm is added, the electrical characteristics (especially insulation resistance) of the dielectric to which a voltage is constantly applied hardly deteriorate even in a high temperature and high humidity state. Yttrium exhibits an effect when added at 1000 ppm or more, and exhibits an excellent effect particularly when added at 500 ppm or more. If it exceeds 50,000 ppm, the life characteristics are rather deteriorated.
この原因は定かではないが、Pbを構成元素として含む
ペロブスカイト系高誘電率磁器組成物にはY2O3が固溶し
にくく、個々の粒子の3重点等にY2O3が局在するめと考
えられる。従ってPbを含むペロブスカイト系の高誘電率
磁器組成物であれば特に限定されるものではない。Pbの
存在量としては、PbO換算で30〜70wtが好ましく、この
範囲で誘電率が高くなる。Although the cause is not clear, Y 2 O 3 is hardly dissolved in the perovskite-based high dielectric constant porcelain composition containing Pb as a constituent element, and Y 2 O 3 is localized at the triple point of each particle. it is conceivable that. Accordingly, there is no particular limitation as long as it is a perovskite-based high dielectric constant porcelain composition containing Pb. The Pb abundance is preferably 30 to 70 wt% in terms of PbO, and within this range, the dielectric constant is high.
このPbを含むペロブスカイト系高誘電率磁器組成物と
しては、Pb(Mg1/3Nb2/3)O3,Pb(Zn1/3Nb2/3)O3,PbTi
O3,PbZrO3,Pb(Fe1/2Nb1/2)O3,Pb(Fe2/3W1/3)O3,Pb
(Mg1/2W1/2)O3Pb(Ni1/3Nb1/3)O3等を基本成分とす
るものが挙げられる。当然これらの複合系も挙げられ、
さらにMnO2,Co2O3,La2O3,Sb2O3,NiO,MgO,ZrO2等の各種
添加物を含んでいても良いことは言うまでもない。Examples of the perovskite-based high dielectric constant porcelain composition containing Pb include Pb (Mg 1/3 Nb 2/3 ) O 3 , Pb (Zn 1/3 Nb 2/3 ) O 3 , PbTi
O 3 , PbZrO 3 , Pb (Fe 1/2 Nb 1/2 ) O 3 , Pb (Fe 2/3 W 1/3 ) O 3 , Pb
(Mg 1/2 W 1/2 ) O 3 Pb (Ni 1/3 Nb 1/3 ) O 3 or the like as a basic component. Naturally, these composite systems are also mentioned,
Needless to say, various additives such as MnO 2 , Co 2 O 3 , La 2 O 3 , Sb 2 O 3 , NiO, MgO, and ZrO 2 may be included.
特にPb(Mg1/3Nb1/3)O3,Pb(Zn1/3Nb1/3)O3のうち
少なくとも一種を50モル%以上含有する組成物にイット
リウムをY2O3に換算して100≦Y2O3≦50000ppm添加する
ことにより高い誘電率を有しかつ寿命特性の優れた材料
が得られる。この場合、Pb原子の1〜35モル%をBa,Sr,
Caのうち少なくとも1種で置換することにより高い誘電
率と絶縁抵抗を一層高めることができる。In particular, yttrium is converted to Y 2 O 3 in a composition containing at least one of Pb (Mg 1/3 Nb 1/3 ) O 3 and Pb (Zn 1/3 Nb 1/3 ) O 3 in an amount of 50 mol% or more. By adding 100 ≦ Y 2 O 3 ≦ 50000 ppm, a material having a high dielectric constant and excellent life characteristics can be obtained. In this case, 1 to 35 mol% of the Pb atom is Ba, Sr,
By substituting at least one of Ca, high dielectric constant and insulation resistance can be further increased.
特に好ましい態様としては、一般式 xPb(Zn1/3Nb2/3)O3− yPb(Mg1/3Nb2/3)O3−zPbTiO3 で表わしたとき、それぞれの成分を頂点とする三元図
(第1図)の a(x=0.50,y=0.00,z=0.50) b(x=1.00,y=0.00,z=0.00) c(x=0.20,y=0.80,z=0.00) d(x=0.05,y=0.90,z=0.05) で示される各点を結ぶ線内の基本組成(ただし、abを結
ぶ線分上は除く)のPbの一部を1〜35mol%のBa及びSr
の少なくとも一種で置換した基本組成にイットリウム
(Y)元素をY2O3に換算して基本組成の重量に対して10
0≦Y2O3≦50000ppm添加した事を特徴とする高誘電率磁
器組成物が挙げられる。As a particularly preferred embodiment, when represented by the general formula xPb (Zn 1/3 Nb 2/3 ) O 3 -yPb (Mg 1/3 Nb 2/3 ) O 3 -zPbTiO 3 , each component has a peak. A (x = 0.50, y = 0.00, z = 0.50) b (x = 1.00, y = 0.00, z = 0.00) c (x = 0.20, y = 0.80, z = 0.00) in the ternary diagram (Fig. 1) ) D (x = 0.05, y = 0.90, z = 0.05) A part of Pb of the basic composition in the line connecting the points (except on the line connecting ab) is 1 to 35 mol%. Ba and Sr
The yttrium (Y) element is converted to Y 2 O 3 in the basic composition substituted with at least one of
A high dielectric constant porcelain composition characterized by adding 0 ≦ Y 2 O 3 ≦ 50000 ppm is provided.
本発明において基本組成を上記のようにa,b,c,dの各
点を結ぶ線内としたのはこの範囲をはずれると線分adの
外側では焼成温度が1100℃以上と高くなってしまい、ま
た絶縁抵抗も低下し高いCR値を得ることができない。In the present invention, as described above, the basic composition was within the line connecting the points of a, b, c, and d.If the range deviated from this range, the firing temperature would be as high as 1100 ° C. or higher outside the line segment ad. In addition, the insulation resistance is lowered and a high CR value cannot be obtained.
また、線分cdの外側では、キュリー温度がもともと常
温付近にあるため、Me成分による置換で誘電率が大幅に
低温側に移動して、常温における誘電率が大幅に低下し
てしまう。また、d1(x=0.10,y=0.80,z=0.10)とし
たとき、線分cd1の内側がより好ましい。Further, since the Curie temperature is originally around room temperature outside the line segment cd, the dielectric constant largely shifts to a lower temperature side by the replacement with the Me component, and the dielectric constant at room temperature is greatly reduced. When d 1 (x = 0.10, y = 0.80, z = 0.10), the inside of the line segment cd 1 is more preferable.
またマグネシウム・ニオブ酸鉛は少量の添加・含有で
その効果を発揮するが実用上は1mol%以上含有すること
が望ましい。Magnesium / lead niobate exhibits its effect when added or contained in a small amount, but is preferably contained in an amount of 1 mol% or more in practical use.
また、CR値を考慮すると、亜鉛、ニオブ酸鉛を15mol
%以上含有することが好ましく、さらには、20mol%以
上含有することがより好ましい。20mol%以上含有する
時は、誘電損失も特に小さい。Also, considering the CR value, 15 mol of zinc and lead niobate
%, More preferably 20 mol% or more. When the content is 20 mol% or more, the dielectric loss is particularly small.
またc1(x=0.40,y=0.60,z=0.00),d2(x=0.15,
y=0.70,z=0.15),d3(x=0.20,y=0.60,z=0.20),c
2(x=0.45,y=0.55,z=0.00)としたとき、線分c1d1
の外側では、緻密な磁器を得るのが比較的困難である。Also, c 1 (x = 0.40, y = 0.60, z = 0.00), d 2 (x = 0.15,
y = 0.70, z = 0.15), d 3 (x = 0.20, y = 0.60, z = 0.20), c
2 (x = 0.45, y = 0.55, z = 0.00), the line segment c 1 d 1
Outside, it is relatively difficult to obtain dense porcelain.
このように、CR値,T.C.C.,焼結性等を考慮すると線分
c1d2の内側、特に線分c2d2さらには線分c2d3の内側が好
ましい。しかしながら誘電率等を考慮した場合には、こ
の様な線分で区切られた組成系でも十分な特性を有して
いる。さらにはy0.01,z0.01とPb(Mg1/3Nb2/3)
O3,PbTiO3が存在する元素の方が好ましい。Thus, considering the CR value, TCC, sinterability, etc., the line segment
The inside of c 1 d 2 , particularly the line segment c 2 d 2, and more preferably the inside of line segment c 2 d 3 is preferred. However, when the dielectric constant and the like are taken into consideration, even a composition system divided by such a line segment has sufficient characteristics. Furthermore, y0.01, z0.01 and Pb (Mg 1/3 Nb 2/3 )
Elements in which O 3 and PbTiO 3 are present are more preferable.
一方、Ba,Srは上記した一般式のペロブスカイト構造
を形成するために必要な元素であり、1mol%以下だと、
パイロクロア構造が混在し、高い誘電率および高い絶縁
抵抗を示さない。35mol%以上では誘電率が1000程度以
下と小さくなってしまったりしてしまう。よって、Me成
分での置換量は、(Pb1αMeα)と表わしたとき 0.01<α<0.35 とする。On the other hand, Ba and Sr are elements necessary for forming the perovskite structure of the above general formula.
Pyrochlore structure is mixed and does not show high dielectric constant and high insulation resistance. If it is more than 35 mol%, the dielectric constant may be as small as about 1000 or less. Therefore, the substitution amount in the Me component is expressed as 0.01 <α <0.35 when expressed as (Pb 1 αMeα).
その他 xPb(Zn1/3Nb2/3)O3− yPb(Mg1/3Nb1/3)O3−zPb(Ni1/3Nb2/3)O3 で表わしたとき、それぞれの成分を頂点とする三元図の a(x=0.50,y=0.00,z=0.50) b(x=1.00,y=0.00,z=0.00) c(x=0.10,y=0.90,z=0.00) で示される各点を結ぶ線内の組成(ただし、abcを結ぶ
線分上は除く)のPbの一部を1〜30mol%のBa及びSrの
少なくとも一種で置換したもの、 (1−x)(Pb1-a-bBaaSrb) {(Zn1/3Nb2/3)1-c-d(Mg1/3Nb2/3)cTid}O3・ xBaTiO3 で表わしたとき、 0≦a≦0.35 0≦b≦0.35 0.01≦a+b≦0.35 0<c≦0.9 0<d≦0.5 0.3≦x≦0.5 を満たすもの、 x・Pb(Zn1/3Nb2/3)O3−y・Pb(Mg1/3Nb2/3)O3・ z−PbTiO3 で表わしたとき、それぞれの成分を頂点とする三元図の a(x=0.60,y=0.40,z=0.00) b(x=0.60,y=0.05,z=0.35) c(x=0.45,y=0.05,z=0.50) d(x=0.01,y=0.49,z=0.50) e(x=0.01,y=0.85,z=0.14) f(x=0.15,y=0.85,z=0.00) で示される各点を結ぶ線内の組成のPbの一部を2〜30mo
l%のCaで置換したもの等が挙げられる。Other xPb (Zn 1/3 Nb 2/3 ) O 3 − yPb (Mg 1/3 Nb 1/3 ) O 3 −zPb (Ni 1/3 Nb 2/3 ) O 3 A (x = 0.50, y = 0.00, z = 0.50) b (x = 1.00, y = 0.00, z = 0.00) c (x = 0.10, y = 0.90, z = 0.00) (1−x) in which a part of Pb of the composition in the line connecting the points shown by (except on the line connecting abc) is substituted with at least one of Ba and Sr of 1 to 30 mol%, (Pb 1-ab Ba a Sr b ) {(Zn 1/3 Nb 2/3 ) 1-cd (Mg 1/3 Nb 2/3 ) c Ti d } O 3 · xBaTiO 3 , 0 ≦ a ≦ 0.35 0 ≦ b ≦ 0.35 0.01 ≦ a + b ≦ 0.35 0 <c ≦ 0.9 0 <d ≦ 0.5 0.3 ≦ x ≦ 0.5, x · Pb (Zn 1/3 Nb 2/3 ) O 3 -y · When represented by Pb (Mg 1/3 Nb 2/3 ) O 3 .z-PbTiO 3 , a (x = 0.60, y = 0.40, z = 0.00) b () of a ternary diagram having each component as a vertex x = 0.60, y = 0.05, z = 0.35) c (x = 0.45, y = 0.0 5, z = 0.50) d (x = 0.01, y = 0.49, z = 0.50) e (x = 0.01, y = 0.85, z = 0.14) f (x = 0.15, y = 0.85, z = 0.00) Part of Pb in the line connecting each point
and those substituted with 1% of Ca.
積層タイプの素子を製造する場合は、前述の原料粉末
または混合粉砕後の粉末にバインダー,溶財等を加えス
ラリー化して、グリーンシートを形成しこのグリーンシ
ート上に内部電極を印刷した後、所定の枚数を積層・圧
着し、焼成することにより製造する。この時、本発明の
誘電体材料は低温で焼結ができるため、内部電極材料と
して例えばAg主体(Ag80〜50%,Pb20〜50%など)の安
価な材料を用いることができる。In the case of manufacturing a laminated type element, a binder, a solution, etc. are added to the raw material powder or the powder after mixing and pulverization to form a slurry, a green sheet is formed, and an internal electrode is printed on the green sheet. Is manufactured by laminating, pressing and firing. At this time, since the dielectric material of the present invention can be sintered at a low temperature, an inexpensive material mainly composed of, for example, Ag (Ag: 80 to 50%, Pb: 20 to 50%) can be used as the internal electrode material.
また、このように低温で焼成が可能であることから、
回路基板上等に印刷・焼成する厚膜誘電体ペーストの材
料としても有効である。In addition, since firing at such a low temperature is possible,
It is also effective as a material for a thick film dielectric paste printed and fired on a circuit board or the like.
この様な本発明磁器組成物は、高誘電率かつ、その温
度特性が良好である。また、CR値も大きく、特に高温で
も十分な値を有し、高温での信頼性に優れたセラミック
コンデンサを得ることができる。Such a porcelain composition of the present invention has a high dielectric constant and good temperature characteristics. In addition, the CR value is large, and has a sufficient value even at a high temperature, and a ceramic capacitor excellent in reliability at a high temperature can be obtained.
さらに誘電率バイアス電界依存性も優れており、2kV/
mmでも10%以下程度の材料を得ることもできる。したが
って、MILのBX特性や高圧用の材料として有効である。
また誘電損失が小さく、交流用、高周波用としても有効
である。さらに前述のごとく誘電率の温度特性に優れて
いるため、電歪素子へ応用した場合でも変位量の温度変
化の小さいものを得ることができる。Furthermore, the dielectric constant bias electric field dependency is excellent, and 2kV /
A material of about 10% or less can be obtained even in mm. Therefore, it is effective as a material for BX characteristics and high pressure of MIL.
Further, it has a small dielectric loss and is effective for AC and high frequency applications. Further, as described above, since the temperature characteristics of the dielectric constant are excellent, even when applied to an electrostrictive element, an element having a small temperature change in displacement can be obtained.
(実施例) 以下に本発明の実施例を説明する。(Example) An example of the present invention will be described below.
実施例−1 出発原料としてPb,Ba,Sr,Zn,Nb,Y,Fe,W,Ti,Mg等の酸
化物等の出発原料を用いて所望の組成になるように調合
した後、ボールミル等で混合し、700〜850℃で仮焼す
る。次いでこの仮焼体をボールミル等で粉砕し乾燥の
後、バインダーを加え造粒し、プレスして直径17mm,厚
さ約2mmの円板状素体を形成した。混合,粉砕用のボー
ルは、不純物の混入を防止するため、部分安定化ジルコ
ニアボール等の硬度が大きく、かつ靱性の高いボールを
用いることが好ましい。Example-1 After using a starting material such as an oxide such as Pb, Ba, Sr, Zn, Nb, Y, Fe, W, Ti, or Mg as a starting material, a desired composition was prepared, and then a ball mill or the like was prepared. And calcined at 700-850 ° C. Next, the calcined body was pulverized by a ball mill or the like, dried, and then granulated by adding a binder, followed by pressing to form a disc-shaped element having a diameter of 17 mm and a thickness of about 2 mm. It is preferable to use a ball having high hardness and high toughness, such as a partially stabilized zirconia ball, as a ball for mixing and pulverization in order to prevent contamination of impurities.
この素体を空気中980〜1080℃,2時間の条件で焼結
し、両面に銀電極を焼付けた。その後100Vの電圧を2分
間印加した後、絶縁抵抗計を用いて25℃にて絶縁抵抗を
測定した。寿命試験は55℃,95%RHの恒温恒湿槽中に素
子を保持し、100V印加した。200時間経過後、素子を取
り出し、表面の水分を取り除き、室温に一昼夜放置した
後、再び25℃において絶縁抵抗を測定した。The element was sintered in air at 980 to 1080 ° C. for 2 hours, and silver electrodes were baked on both sides. Then, after applying a voltage of 100 V for 2 minutes, the insulation resistance was measured at 25 ° C. using an insulation resistance meter. In the life test, the device was held in a constant temperature / humidity chamber at 55 ° C. and 95% RH, and 100 V was applied. After a lapse of 200 hours, the device was taken out, the surface moisture was removed, the device was left at room temperature for 24 hours, and the insulation resistance was measured again at 25 ° C.
容量は1KHz,1Vrms,25℃の条件でデジタルLCRメーター
による測定値であり、この値から誘電率を求めた。容量
抵抗積CRは25℃での(誘電率)×(絶縁抵抗)×(真空
の誘電率)から求めた。The capacity was measured by a digital LCR meter under the conditions of 1 KHz, 1 Vrms and 25 ° C., and the dielectric constant was determined from this value. The capacitance resistance product CR was determined from (dielectric constant) × (insulation resistance) × (dielectric constant in vacuum) at 25 ° C.
第1表にはCRの初期値と200時間の寿命試験後のCR値
を示す。第1表から明らかなように本発明の磁器組成物
は高温,高湿かつ電圧印加状態においても容量抵抗積の
劣化が少なく、信頼性に優れていることがわかる。Table 1 shows the initial value of CR and the CR value after a 200-hour life test. As is evident from Table 1, the porcelain composition of the present invention shows little deterioration of the capacitance-resistance product even at high temperature, high humidity and a voltage applied state, and is excellent in reliability.
実施例−2 第2表に示す組成の焼結体を実施例−1と同様に作成
し、各特性を測定した。誘電損失、容量は、1KHz,1Vrm
s,25℃の条件でのデジタルLCRメーターによる測定値で
あり、この値から誘電率を算出した。また、絶縁抵抗
は、100Vの電圧を2分間印加した後、絶縁抵抗計を用い
て測定した値から算出した。容量抵抗積は、25℃での
(誘電率)×(絶縁抵抗)×(真空の誘電率)から求め
た。 Example 2 A sintered body having the composition shown in Table 2 was prepared in the same manner as in Example 1, and each characteristic was measured. Dielectric loss, capacity is 1KHz, 1Vrm
s, Measured by a digital LCR meter under the conditions of 25 ° C., from which the dielectric constant was calculated. The insulation resistance was calculated from a value measured using an insulation resistance meter after a voltage of 100 V was applied for 2 minutes. The capacitance-resistance product was determined from (dielectric constant) × (insulation resistance) × (dielectric constant in vacuum) at 25 ° C.
寿命試験は、55℃,95%RHの恒温恒湿槽中に素子を保
持し,100V印加した。In the life test, the element was held in a constant temperature / humidity chamber at 55 ° C. and 95% RH, and 100 V was applied.
200時間経過後、素子を取り出し表面の水分を取り除
き室温に一昼夜放置した後、容量、誘電損失および絶縁
抵抗を測定した。After a lapse of 200 hours, the device was taken out, moisture on the surface was removed, and the device was left at room temperature for 24 hours. Then, the capacitance, dielectric loss, and insulation resistance were measured.
その結果を第2表に示す。第2表から明らかなように
本発明の磁器組成物は高温、高湿かつ電圧印加状態にお
いても絶縁抵抗の劣化が少なく、信頼性に優れているこ
とがわかる。Table 2 shows the results. As is evident from Table 2, the porcelain composition of the present invention has little deterioration in insulation resistance even under high temperature, high humidity and a voltage applied state, and has excellent reliability.
〔発明の効果〕 以上説明したように、本発明によれば、信頼性に優れ
かつ高誘電率でかつ温度特性,バイアス特性にも優れた
高誘電率磁器組成物を得ることができる。特に、この様
な各種特性に優れた磁器を低温焼成で得ることができる
ため、積層セラミックコンデンサ、積層型セラミック変
位発生素子等の積層タイプのセラミック素子への応用に
適している。 [Effects of the Invention] As described above, according to the present invention, a high dielectric constant porcelain composition having excellent reliability, a high dielectric constant, and excellent temperature characteristics and bias characteristics can be obtained. In particular, since porcelain excellent in such various characteristics can be obtained by firing at low temperature, it is suitable for application to multilayer ceramic elements such as multilayer ceramic capacitors and multilayer ceramic displacement generating elements.
第1図は本発明を示す組成図。 FIG. 1 is a composition diagram showing the present invention.
Claims (4)
ト系高誘電率磁器組成物に、イットリウム(Y)をY2O5
に換算して重量比で100乃至50000ppm添加含有すること
を特徴とした高誘電率磁器組成物。(1) Yttrium (Y) is added to Y 2 O 5 in a perovskite-based high dielectric constant porcelain composition containing Pb as a constituent element.
A high dielectric constant porcelain composition characterized by containing 100 to 50,000 ppm by weight in terms of weight.
は、Pb(Mg1/3Nb2/3)O3及びPb(Zn1/3Nb2/3)O3の少な
くとも一種を50mol%以上含有し、Pbの1〜35mol%をB
a,Sr,Caの少なくとも一種で置換したものであることを
特徴とする請求項1記載の高誘電率磁器組成物。2. The perovskite-based high dielectric constant porcelain composition comprises at least 50 mol% of at least one of Pb (Mg 1/3 Nb 2/3 ) O 3 and Pb (Zn 1/3 Nb 2/3 ) O 3. Containing 1 to 35 mol% of Pb as B
The high dielectric constant porcelain composition according to claim 1, wherein the composition is substituted with at least one of a, Sr, and Ca.
は、一般式 xPb(Zn1/3Nb2/3)O3− yPb(Mg1/3Nb2/3)O3−zPbTiO3 で表わしたとき、それぞれの成分を頂点とする三元図の a(x=0.50,y=0.00,z=0.50) b(x=1.00,y=0.00,z=0.00) c(x=0.20,y=0.80,z=0.00) d(x=0.05,y=0.90,z=0.05) で示される各点を結ぶ線内の基本組成(ただし、abを結
ぶ線分上は除く)のPbの一部を1〜35mol%のBa及びSr
の少なくとも一種で置換したものであることを特徴とす
る請求項1記載の高誘電率磁器組成物。3. The perovskite-based high dielectric constant porcelain composition is represented by a general formula xPb (Zn 1/3 Nb 2/3 ) O 3 -yPb (Mg 1/3 Nb 2/3 ) O 3 -zPbTiO 3 . Then, a (x = 0.50, y = 0.00, z = 0.50) b (x = 1.00, y = 0.00, z = 0.00) c (x = 0.20, y = 0.80, z = 0.00) d (x = 0.05, y = 0.90, z = 0.05) Part of Pb of the basic composition in the line connecting the points (excluding the line connecting ab) 1 to 35 mol% Ba and Sr
2. The high dielectric constant porcelain composition according to claim 1, wherein the composition is replaced by at least one of the following.
物からなる誘電体層を有するセラミックコンデンサ。4. A ceramic capacitor having a dielectric layer comprising the high dielectric constant porcelain composition according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63214858A JP2660010B2 (en) | 1988-08-31 | 1988-08-31 | High dielectric constant porcelain composition and ceramic capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63214858A JP2660010B2 (en) | 1988-08-31 | 1988-08-31 | High dielectric constant porcelain composition and ceramic capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0264055A JPH0264055A (en) | 1990-03-05 |
JP2660010B2 true JP2660010B2 (en) | 1997-10-08 |
Family
ID=16662720
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4114775C2 (en) * | 1990-05-11 | 1995-07-06 | Murata Machinery Ltd | Device and method for producing a braid |
US5357839A (en) * | 1990-07-12 | 1994-10-25 | Albany International Corp. | Solid braid structure |
JPH0645498B2 (en) * | 1990-08-28 | 1994-06-15 | 日本電気株式会社 | Porcelain composition |
JPH04243952A (en) * | 1991-01-31 | 1992-09-01 | Nec Corp | Ceramic composition |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS56160372A (en) * | 1980-05-08 | 1981-12-10 | Nippon Electric Co | High dielectric constant ceramic composition |
JPS6355813A (en) * | 1986-08-27 | 1988-03-10 | 株式会社村田製作所 | Dielectric ceramic composition |
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1988
- 1988-08-31 JP JP63214858A patent/JP2660010B2/en not_active Expired - Lifetime
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