JP2633606B2 - Method for forming conductive film on aluminum or aluminum alloy member - Google Patents

Method for forming conductive film on aluminum or aluminum alloy member

Info

Publication number
JP2633606B2
JP2633606B2 JP63047956A JP4795688A JP2633606B2 JP 2633606 B2 JP2633606 B2 JP 2633606B2 JP 63047956 A JP63047956 A JP 63047956A JP 4795688 A JP4795688 A JP 4795688A JP 2633606 B2 JP2633606 B2 JP 2633606B2
Authority
JP
Japan
Prior art keywords
aluminum
layer
nickel plating
conductive film
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63047956A
Other languages
Japanese (ja)
Other versions
JPH01222091A (en
Inventor
靖 油井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP63047956A priority Critical patent/JP2633606B2/en
Publication of JPH01222091A publication Critical patent/JPH01222091A/en
Application granted granted Critical
Publication of JP2633606B2 publication Critical patent/JP2633606B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/04Anodisation of aluminium or alloys based thereon
    • C25D11/18After-treatment, e.g. pore-sealing
    • C25D11/20Electrolytic after-treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)

Description

【発明の詳細な説明】 [概要] アルミ素地から酸化アルミニウム層を通って表面に広
がる導電被膜を形成するアルミ又はアルミ合金の導電被
膜形成方法に関し、 導電被膜を形成するメッキ工程を効率化して製造歩留
を向上することを目的とし、 アルミ素地上に形成した酸化アルミニウム層の微小ホ
ール底部のバリア層を除去した後に、平滑剤、光沢剤及
び活性剤を添加したメッキ浴に浸漬して所定の電流密度
とメッキ時間の制御によりアルミ素地からバリア層除去
部分、更に微小ホールから酸化アルミニムウム表面に平
坦に広がる光沢ニッケルメッキ層を成長させる。
DETAILED DESCRIPTION OF THE INVENTION [Summary] A method for forming a conductive film of aluminum or an aluminum alloy, which forms a conductive film extending from an aluminum base material through an aluminum oxide layer to the surface, relates to a method for forming a conductive film by efficiently performing a plating process. For the purpose of improving the yield, after removing the barrier layer at the bottom of the minute hole of the aluminum oxide layer formed on the aluminum substrate, immerse it in a plating bath to which a smoothing agent, brightener and activator have been added. By controlling the current density and the plating time, a bright nickel plating layer that spreads flat on the aluminum oxide surface from the minute holes and the barrier layer removed portion from the aluminum substrate.

[産業上の利用分野] 本発明は、アルミ素地から酸化アルミニウム層を通っ
て表面に広がる導電被膜を形成するアルミ又はアルミ合
金部材の導電被膜形成方法に関する。
[Field of Industrial Application] The present invention relates to a method for forming a conductive coating on an aluminum or aluminum alloy member, which forms a conductive coating extending from an aluminum substrate through an aluminum oxide layer to the surface.

情報機器筐体の軽量化と耐蝕性を向上するためアルミ
ニウム又はその合金による筐体のアルミ化が図られてい
る。
In order to reduce the weight of the information device housing and improve corrosion resistance, the housing is made of aluminum or aluminum alloy.

このような情報機器筐体のアルミ化においては、アル
ミケースの表面にアルマイト処理法により酸化アルミニ
ウム層(アルマイト層)を形成して硬度と耐蝕性を確保
し、更に筐体のアースコンタクトの接点を形成するた
め、接点の形成位置にアルミ素地から酸化アルミニウム
層を通過して表面に至るニッケル導伝被膜を形成してい
る。
In the case of aluminum housing for such information equipment, an aluminum oxide layer (alumite layer) is formed on the surface of the aluminum case by an alumite treatment method to secure hardness and corrosion resistance, and furthermore, the contact point of the earth contact of the housing is formed. For this purpose, a nickel conductive film is formed from the aluminum base through the aluminum oxide layer to the surface at the contact formation position.

[従来の技術] 従来、酸化アルミニウム被膜を有するアルミケースの
表面にアースコンタクト用の導電被膜を形成する方法と
しては、例えば第3,4図のものが知られている。
[Prior Art] Conventionally, as a method of forming a conductive film for ground contact on the surface of an aluminum case having an aluminum oxide film, for example, those shown in FIGS. 3 and 4 are known.

この従来方法は、第3図(a)に示すように、まず、
アルミニウム又はアルミニウム合金でなるアルミニウム
素地10の表面にアルマイト処理法により酸アルミニウム
層12を形成する。酸化アルミニウム層12は周知のように
アルミ素地10側のバリア層16と表面に開口した微小ホー
ル18の有する多孔質層18で成る。
In this conventional method, first, as shown in FIG.
An aluminum oxide layer 12 is formed on the surface of an aluminum substrate 10 made of aluminum or an aluminum alloy by an alumite treatment method. As is well known, the aluminum oxide layer 12 includes a barrier layer 16 on the aluminum substrate 10 side and a porous layer 18 having minute holes 18 opened on the surface.

続いて、アルミ素地10と酸化アルミニウム層12の間に
所定の電圧を加えることで微小ホール18の底部とアルミ
素地10との間のバリア層14を除去する。
Subsequently, by applying a predetermined voltage between the aluminum base 10 and the aluminum oxide layer 12, the barrier layer 14 between the bottom of the minute hole 18 and the aluminum base 10 is removed.

このようにバリア層14を除去した後に第4図に示すよ
うに、一時メッキ槽22にアルミ部材を浸漬し、第3図
(a)に示すように、アルミ素地10から除去したバリア
槽14を通って微小ホール18の中に至る半光沢ニッケルメ
ッキ層24を成長させる。この半分光沢ニッケルメッキ層
24を成長させる一時メッキ槽22のメッキ浴には一次光沢
剤として、例えばサッカリン(登録商標)が添加されて
いる。
After removing the barrier layer 14 in this manner, as shown in FIG. 4, the aluminum member is immersed in the temporary plating tank 22, and as shown in FIG. A semi-bright nickel plating layer 24 is grown through the micro holes 18. This half bright nickel plating layer
For example, saccharin (registered trademark) is added as a primary brightening agent to the plating bath of the temporary plating tank 22 for growing 24.

続いて、第4図に示すように、二次メッキ槽26にアル
ミ部材を移し、第3図(b)に示すように、半光沢ニッ
ケメッキ層24の上に酸化アルミニウム層12の表面に平坦
に広がる光沢ニッケルメッキ層28を成長させる。
Subsequently, as shown in FIG. 4, the aluminum member was transferred to a secondary plating tank 26, and as shown in FIG. 3 (b), the surface of the aluminum oxide layer 12 was flattened on the semi-gloss nickel plating layer 24. The spreading bright nickel plating layer 28 is grown.

この光沢ニッケルメッキ層28を成長させる二次メッキ
層26のメッキ欲には、一次光沢剤に加えて二次光沢剤と
して例えばブチンジオールが添加され、また活性剤とし
てラウリル硫酸ナトリウムが添加され、更に適宜の平滑
剤が添加されている。
For the plating desire of the secondary plating layer 26 for growing the bright nickel plating layer 28, for example, butynediol is added as a secondary brightener in addition to the primary brightener, and sodium lauryl sulfate is added as an activator. An appropriate leveling agent is added.

[発明が解決しようとする課題] しかしながら、このような従来のアルミ又はアルミ合
金の導電被膜形成方法にあっては、ニッケルメッキ層を
確実に成長できる点では優れるが、メッキ槽が2槽必要
であることからメッキ設備が大がかりとなり、またメッ
キ槽を移す際に接点の位置ずれ等を発生し易く、更にメ
ッキ工程が2工程に分かれるために処理時間が長くコス
トアップになる問題があった。
[Problems to be Solved by the Invention] However, such a conventional method of forming a conductive film of aluminum or an aluminum alloy is excellent in that a nickel plating layer can be surely grown, but requires two plating tanks. Because of this, there is a problem that the plating equipment becomes large-scale, the position of the contact is easily shifted when the plating tank is moved, and the plating step is divided into two steps, so that the processing time is long and the cost is increased.

一方、導電被膜は半光沢ニッケルメッキ層24の上に光
沢ニッケルメッキ層28を成長させているため、アースコ
ンタクトの接点接触による応力を受けたときに表面の光
沢ニッケルメッキ層28が剥離し、接触不良を起こす恐れ
があった。
On the other hand, as for the conductive film, the bright nickel plating layer 28 is grown on the semi-bright nickel plating layer 24. There was a risk of failure.

本発明は、このような従来の問題点に鑑みてなされた
もので、導電被膜を形成するメッキ工程の効率化して製
造歩留りを向上させるアルミ又はアルミ合金材の導伝被
膜形成方法を提供することを目的とする。
The present invention has been made in view of such conventional problems, and provides a method of forming a conductive film of aluminum or an aluminum alloy material, which improves the efficiency of a plating process for forming a conductive film and improves the production yield. With the goal.

[課題を解決するための手段] 第1図は本発明の原理説明図である。[Means for Solving the Problems] FIG. 1 is an explanatory view of the principle of the present invention.

第1図において、まず前処理として、アルミニウム又
はアルミニウム合金であるアルミ素地10上に多孔質の酸
化アルミニウム層12を形成した後に、酸化アルミニウム
層12における微小ホール18の底部とアルミ素地10との間
のバリア層14を除去する。
In FIG. 1, first, as a pretreatment, a porous aluminum oxide layer 12 is formed on an aluminum substrate 10 made of aluminum or an aluminum alloy. The barrier layer 14 is removed.

続いて平滑剤、光沢剤(サッカリン、ブチンジオール
等)及び活性剤(ラウリル硫酸ナトリウム等)を添加し
たニッケルメッキ浴に浸漬して所定の電流密度(邸えば
0.15〜0.45A/dm2)とメッキ時間(例えば10〜15分)の
制御によりアルミ素地10からバリア層14の除去部分、更
に微小ホール18から酸化アルミニウム層12の表面に平坦
に広がる光沢ニッケルメッキ層20を成長させる。
Subsequently, it is immersed in a nickel plating bath to which a smoothing agent, a brightener (saccharin, butynediol, etc.) and an activator (sodium lauryl sulfate, etc.) are added, and a predetermined current density (for example,
0.15~0.45A / dm 2) and the plating time (e.g., removed portions of the barrier layer 14 of aluminum matrix 10 under the control of 10-15 minutes), bright nickel plating spread flat further from the small hole 18 on the surface of the aluminum oxide layer 12 Grow layer 20.

[作用] このような本発明の導電被膜形成方法にあっては、単
一のメッキ槽で光沢ニッケルメッキによる導電被膜を成
長させることができるため、メッキ工程が効率化され、
設備も簡単になるこで製造コストを低減できる。
[Operation] In the method for forming a conductive film according to the present invention, a conductive film formed by bright nickel plating can be grown in a single plating tank, so that the plating step is made more efficient,
Since the equipment is simplified, manufacturing costs can be reduced.

また導電被膜はアルミ素地から酸化アルミニウム表面
に単一の光沢ニッケルメッキ層を成長させているため、
剥離等の問題がなく、信頼性の高い導電被膜を形成でき
る。
In addition, since the conductive film grows a single bright nickel plating layer on the aluminum oxide surface from aluminum base,
A highly reliable conductive film can be formed without problems such as peeling.

[実施例] 第2図は本発明の導電膜形成方法の処理過程を示した
実施例構成図である。
Example FIG. 2 is an example configuration diagram showing a process of a conductive film forming method of the present invention.

まず、第2図(a)に示すように処理対象となるアル
ミニウム部材又はアルミニウム合金部材にアルマイト化
処理を施してアルミ素地10の表面に10μ度の酸化アルニ
ミウム層12を形成する。酸化アルミニウム層12は周知の
ように表面に開口した複数の微小ホール18を有する多孔
質層16と、微小ホール18とをアルミ素地10との間に形成
されるバリア層14を有する。
First, as shown in FIG. 2 (a), an aluminum member or an aluminum alloy member to be treated is subjected to an alumite treatment to form an aluminum oxide layer 12 of 10 μ degree on the surface of the aluminum substrate 10. As is well known, the aluminum oxide layer 12 includes a porous layer 16 having a plurality of minute holes 18 opened on the surface, and a barrier layer 14 in which the minute holes 18 are formed between the aluminum substrate 10.

続いて、第2図(b)に示すように、アルミ素地10と
酸化アルミニウム層12との間に所定の電圧を印加し、酸
化アルミニウム層12における微小ホール18の底部とアル
ミ素地10との間の電圧降下によってバリア層14を除去し
てバリア層除去ホール30を形成する。
Subsequently, as shown in FIG. 2 (b), a predetermined voltage is applied between the aluminum substrate 10 and the aluminum oxide layer 12, and the gap between the bottom of the minute hole 18 in the aluminum oxide layer 12 and the aluminum substrate 10 is applied. The barrier layer 14 is removed by the voltage drop to form a barrier layer removal hole 30.

続いて、第2図(b)に示すバイア層除去ホール30の
形成処理が済んだ後に平滑剤、光沢剤及び活性剤を添加
したニッケルメッキ浴にアルミ部材を浸漬して第2図
(c)に示すように光沢ニッケルメッキ層20を成長させ
る。
Subsequently, after the formation processing of the via layer removing hole 30 shown in FIG. 2 (b) is completed, the aluminum member is immersed in a nickel plating bath to which a smoothing agent, a brightening agent and an activator are added, and FIG. The bright nickel plating layer 20 is grown as shown in FIG.

この光沢ニッケルメッキ層20を成長させるためのニッ
ケルメッキ浴に添加される光沢剤としては、従来一次光
沢剤として使用していたサッカリン及び二次光沢剤とし
て使用していたブチンジオールをそれぞれ添加する。ま
た、活性剤としてはラウリル硫酸ナトリウムを添加す
る。更に、平滑剤としては周知のニッケルメッキに使用
される適宜の平滑剤を添加する。
As a brightening agent added to a nickel plating bath for growing the bright nickel plating layer 20, saccharin which has been conventionally used as a primary brightening agent and butynediol which has been used as a secondary brightening agent are added. Also, sodium lauryl sulfate is added as an activator. Further, as a leveling agent, an appropriate leveling agent used for well-known nickel plating is added.

このような平滑剤、光沢剤及び活性剤を添加したニッ
ケルメッキ浴にアルミ部材を浸漬して第2図(c)に示
すように光沢ニッケルメッキ層20を成長させるメッキ処
理は、メッキ槽の電流密度を例えば0.15〜0.45A/dm2(1
00×100メッシュ当りの電流密度)の範囲の一定電流密
度に制御し、且つメッキ時間を10〜15分の範囲で制御す
る。また、メッキ液の温度は例えば55℃、pH=4に保た
れる。
The plating process of growing the bright nickel plating layer 20 by immersing the aluminum member in a nickel plating bath to which such a smoothing agent, brightener and activator are added as shown in FIG. For example, if the density is 0.15 to 0.45 A / dm 2 (1
The current density is controlled within a range of (00 × 100 current density per 100 mesh), and the plating time is controlled within a range of 10 to 15 minutes. The temperature of the plating solution is maintained at, for example, 55 ° C. and pH = 4.

このような条件の元での光沢ニッケルメッキ処理によ
りメッキ浴に浸漬したアルミ部材は、第2図(c)に示
すように、アルミ素地10に継がったバリア層除去ホール
30の底部から光沢ニッケルメッキ層20の成長が始まり、
バリア層除去ホール30を通って微小ホール18に至り、更
に微小ホール18の開口部から酸化アルミニウム層12の表
面に平坦に広がるように成長する。この光沢ニッケルメ
ッキ層20の成長で酸化アルミニウム層12の表面には約1
μ以下の厚みを持ってコンタクト接点を形成する平坦部
が作り出される。
As shown in FIG. 2 (c), the aluminum member immersed in the plating bath by the bright nickel plating process under such conditions was used as a barrier layer removal hole connected to the aluminum base 10.
The growth of the bright nickel plating layer 20 starts from the bottom of 30,
The fine holes 18 reach the minute holes 18 through the barrier layer removing holes 30, and further grow so as to spread flat on the surface of the aluminum oxide layer 12 from the openings of the minute holes 18. The growth of the bright nickel plating layer 20 causes the surface of the aluminum oxide layer 12 to have about 1
Flats are created that form contact contacts with a thickness of less than μ.

尚、光沢ニッケルメッキ層20を成長させるためのメッ
キ槽の電流密度及びメッキ時間については、実験的な処
理を通じて最適電流密度とメッキ時間を、他のメッキ槽
条件と共に決めることができる。
As for the current density and the plating time of the plating bath for growing the bright nickel plating layer 20, the optimum current density and the plating time can be determined together with other plating bath conditions through experimental processing.

[発明の効果] 以上説明してきたように本発明によれば、単一のメッ
キ槽で光沢ニッケルメッキによる導電被膜を成長させる
ことができるため、メッキ工程が大幅に効率化でき、設
備が簡単で工程ロスが少なく、製造コストを大幅に低減
できる。
[Effects of the Invention] As described above, according to the present invention, a conductive film formed by bright nickel plating can be grown in a single plating tank, so that the plating process can be made much more efficient and the equipment can be simplified. Process loss is small, and manufacturing costs can be significantly reduced.

また、単一の光沢ニッケルメッキ層を成長させている
ため、コンタクト接点として使用したときの剥離の問題
がなく、更に従来の半光沢ニッケルメッキに続いて光沢
ニッケルメッキを成長させた場合に比べ、単一の光沢ニ
ッケルメッキ層の成長であることから抵抗値自体も小さ
くすることができる。
In addition, since a single bright nickel plating layer is grown, there is no problem of peeling when used as a contact contact. Since the growth is a single bright nickel plating layer, the resistance value itself can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の原理説明図; 第2図は本発明の処理工程を示した実施例構成図; 第3図は従来技術の説明図; 第4図は従来設備の説明図である。 10:アルミ素地 12:酸化アルミニウム層 14:バリア層 16:多孔質層 18:微小ホール 20:光沢ニッケルメッキ層 30:バリア層除去ホール FIG. 1 is an explanatory view of the principle of the present invention; FIG. 2 is a structural view of an embodiment showing the processing steps of the present invention; FIG. 3 is an explanatory view of a conventional technique; 10: Aluminum base 12: Aluminum oxide layer 14: Barrier layer 16: Porous layer 18: Micro hole 20: Bright nickel plating layer 30: Barrier layer removal hole

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】アルミニウム又はアルミニウム合金でなる
アルミ素地(10)上に多孔質の酸化アルミニウム層(1
2)を形成した後に該酸化アルミニウム層(12)の微小
ホール(14)の底部とアルミ素地との間のバリア層(1
6)を除去し、 平滑剤、サッカリン及びブチンジオールからなる光沢
剤、ラウリル硫酸ナトリウムからなる活性剤を添加した
ニッケルメッキ浴に侵漬して電流密度を0.15〜0.45A/dm
2とし、メッキ時間を10〜15分に制御することにより前
記アルミ素地(10)からバリア層除去部分、更に前記微
小ホール(14)から酸化アルミニウム層(12)の表面に
平坦に広がる光沢ニッケルメッキ層(20)を成長される
ことを特徴とするアルミ又はアルミ合金の導電皮膜形成
方法。
A porous aluminum oxide layer (1) is formed on an aluminum substrate (10) made of aluminum or an aluminum alloy.
After the formation of 2), the barrier layer (1) between the bottom of the minute holes (14) of the aluminum oxide layer (12) and the aluminum base is formed.
6) Removed, immersed in a nickel plating bath containing a brightener consisting of a leveling agent, saccharin and butynediol, and an activator consisting of sodium lauryl sulfate, to reduce the current density to 0.15 to 0.45 A / dm
2, and the aluminum barrier layer removal portion from the green body (10), further flat spread bright nickel plating on the surface of the aluminum oxide layer from the small holes (14) (12) by controlling the plating time 10 to 15 minutes A method for forming a conductive film of aluminum or an aluminum alloy, wherein the layer (20) is grown.
JP63047956A 1988-03-01 1988-03-01 Method for forming conductive film on aluminum or aluminum alloy member Expired - Lifetime JP2633606B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63047956A JP2633606B2 (en) 1988-03-01 1988-03-01 Method for forming conductive film on aluminum or aluminum alloy member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63047956A JP2633606B2 (en) 1988-03-01 1988-03-01 Method for forming conductive film on aluminum or aluminum alloy member

Publications (2)

Publication Number Publication Date
JPH01222091A JPH01222091A (en) 1989-09-05
JP2633606B2 true JP2633606B2 (en) 1997-07-23

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WO2008034471A1 (en) * 2006-09-22 2008-03-27 Istanbul Teknik Universitesi Method for the preparation of nanostructures and nanowires

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