JP2596339B2 - Semiconductor device package - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device package in which a semiconductor device mounted on a base and a metal wire provided on a frame are electrically connected to the semiconductor device by bonding wires.

[0002]

2. Description of the Related Art Generally, as shown in FIG. 4, a semiconductor package of this type includes a semiconductor element 4, an element mounting portion 21 for mounting the semiconductor element 4, and a stitch 23 provided with a metal wiring 24. The semiconductor device 4 includes a frame 22 having lead terminals 25 on the outside, a frame cover 28 for hermetically sealing the semiconductor element 4, and bonding wires 27 for electrically connecting the semiconductor element 4 and the metal wiring 24. The semiconductor element 4 is mounted on the element mounting portion 21 by using a eutectic solder such as AuSi or AuSn as a fixing material so that a rectangular mounting hole 26 provided in the stitch 23 of the frame 22 is located substantially at the center. Is done. Semiconductor element 4
Is electrically connected to the outside of the package by connecting the electrode of the semiconductor element 4 and the metal wiring 24 with a bonding wire. The inside of the package is hermetically sealed by fixing the frame 22 and the frame cover 28 by electric welding or the like.

[0003]

When the semiconductor element 4 is fixed to the element mounting portion 21 using a fixing material of AuSi or AuSn, an oxide film on the surface of the fixing material is broken.
You must scrub. In the above-described conventional structure, it is necessary to hold the semiconductor element 4 in the mounting hole 26 and scrub it on the element mounting portion 21. FIG. 5 shows the operation of the scrub, in which the tweezers 30 sandwich the both sides of the semiconductor element 4 in the mounting hole 26 with the arrow B
The scrub is performed by sliding in the direction C and the direction C.
In this case, tweezers 30 are used to perform the scrub operation.
The distance α between the side surface of the semiconductor element 4 and the side surface of the mounting hole 26 must be set to 0.8 mm or more, and the space β must be set to 0.4 mm or more.

FIG. 6 is an enlarged view of the bonding wire 27. Here, the length of the bonding wire 27 on the interval β side is assumed to be 5
0 μm inside, 50 μm from the end face of stitch 23
Assuming that bonding is performed from the inside and the bonding wire 27 is formed in a semicircular arc shape, the wire length: l is approximately 1.57 mm from the equation (1). At this wire length, the wire inductance: L is the wire diameter: a
If φ is 20 μm, the height h of the semiconductor element 4 is 350 μm, and the material is Au, 1.34 nH is obtained from (Equation 2). Table 1 shows the impedance at this time.

[0005]

(Equation 1)

[0006]

[Table 1]

In a package that handles high frequencies of 1 GHz or more, a metal wiring portion serving as a signal transmission line is provided with a microstrip line or a coplanar line to suppress transmission loss so as to suppress signal loss as much as possible. In order to suppress signal loss, a circuit type that matches the impedance of the transmission line is used. However, the impedance of the bonding wire shown in Table 1 above causes the transmission line termination to be mismatched, which causes signal reflection and loss. Also, the signal input to the semiconductor element is attenuated by the ratio between the impedance of the bonding wire and the impedance of the input portion of the semiconductor element. For example, when the impedance and the impedance of the transmission line are 50Ω, at 5 GHz, about 5
Only 0% is input to the semiconductor element. The impedance increases as the frequency increases, as shown by 2πfL, deteriorating the characteristics. In order to prevent such high-frequency characteristics from deteriorating, it is essential to reduce the inductance of the bonding wire. However, in the above-described semiconductor package having the conventional structure, the shortening of the bonding wire is limited, and a good high-frequency There is a problem that it is difficult to obtain characteristics.

[0008] Accordingly, the present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to provide a semiconductor device package which can obtain good high-frequency characteristics.

[0009]

Means for Solving the Problems] To achieve this object, a semiconductor device package according to the present invention is to form an element mounting portion of the base in the protruding element mounting portion is inserted into the frame, this element Inside larger than the outer shape of the mounting part
An element mounting hole is provided for fitting the semiconductor element with a guide hole having a shape . The semiconductor device package according to the present invention, the element mounting portion and the cube-like projections.

[0010]

According to the present invention, the semiconductor element is fitted into the element mounting hole, and the distance between the electrode of the semiconductor element and the metal wiring of the stitch is minimized.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. 1 is a partially cutaway perspective view of a semiconductor device package according to the present invention, FIG. 2 is a side sectional view, and FIG. 3 is an enlarged side sectional view of a main part. In these figures, reference numeral 2 denotes a base made of a metal entirely plated with gold, and an element mounting portion 3 for mounting a semiconductor element 4 formed of a cubic convex portion is provided substantially in the center. Reference numeral 5 denotes a frame made of a multi-layer ceramic, and an upper portion that comes into contact with the frame cover 12 and a lower portion that comes into contact with the base 2 are made of metal, and are plated with gold. A metal wiring 7 is formed on a stitch 6 inside the frame 5 and is electrically connected to the outside through a lead 8.

On the upper surface of the frame 5, a semiconductor
Rectangular element mounting hole having substantially the same shape as the outer shape of the body element 49
However, the lower surface of the frame 5 is
And the width direction (direction of arrow A) is the element mounting portion 3
Larger guide holes 10 are provided.
You. The surface of the guide hole 10 that comes into contact with the element mounting portion 3 is made of gold.
Plated.

The semiconductor element 4 constructed as described above is fitted into the element mounting hole 9 as shown in FIG.
It is arranged on the element mounting part 3 inserted in the “0”. Therefore, the gap between the end face of the element mounting hole 9 and the end face of the semiconductor element 4 is only the gap caused by each processing error, and is 1
0 μm or less. When fixing the semiconductor element 4, a non-flux eutectic solder such as AuSi or AuSn is used as a fixing material, and scrubbing is performed by sliding the element mounting portion 3 in the direction of arrow A in the guide hole 10. After fixing the semiconductor element 4, the frame 5 and the base 2 are fixed by electric welding. The semiconductor element 4 is formed by bonding a metal wire 7 of a stitch 6 and an electrode of the semiconductor element 4 to a bonding wire 11.
Is electrically connected to the outside.
The inside of the package is hermetically sealed by tightly fixing the frame cover 12 and the frame 5.

As described above, in the present invention, FIG.
Since the semiconductor element 4 is fitted into the element mounting hole 9 as shown in (1), the distance between the metal wiring 7 on the stitch 6 and the electrode part of the semiconductor element 4 can be reduced to about 100 μm. At this time, the length of the bonding wire 11 formed in a semicircular arc is 0.31 mm, and the inductance is 0.26 nH. Table 2 shows a comparison of the impedance at this time with the conventional impedance, which can be reduced to about 20% of the conventional impedance. Further, the semiconductor element 4 is replaced with the semiconductor element 4.
By fitting and fixing in the element mounting hole 9 which is almost the same as that described above, the position of the element 4 is fixed more uniformly than in the conventional manufacturing method, so that the automation of the bonding wire connection process can be easily introduced. It is also possible to simultaneously scrub and fix a plurality of semiconductor elements.

[0015]

[Table 2]

[0016]

According to the present invention as described above, according to the present invention, to form a device mounting portion of the base in the protruding element mounting portion is inserted into the frame, than the outer shape of the element mounting portion
A large internal guide hole and an element mounting hole that fits the semiconductor element are provided, and the semiconductor element is fitted and fixed in the element mounting hole, so the distance between the electrodes of the semiconductor element and the metal wiring part is reduced. As a result, the bonding wire can be shortened, and high frequency characteristics can be obtained. In addition, the positions of the elements are fixed uniformly, so that the automation of the bonding wire connection process can be easily introduced. Further, since a plurality of semiconductor elements can be scrubbed and fixed at the same time, the working time can be reduced.

[Brief description of the drawings]

FIG. 1 is a partially cutaway perspective view of a semiconductor device package according to the present invention.

FIG. 2 is a side sectional view of a semiconductor device package according to the present invention.

FIG. 3 is an enlarged side sectional view of a main part of a semiconductor element package according to the present invention.

FIG. 4 is a perspective view of a conventional semiconductor device package.

FIG. 5 is an enlarged perspective view of a main part showing a scrub state of a semiconductor element in a conventional semiconductor element package.

FIG. 6 is an enlarged side view of a main part of a conventional semiconductor element package.

[Explanation of symbols]

 2 Base 3 Element mounting part 4 Semiconductor element 5 Frame 6 Stitch 7 Metal wiring 9 Element mounting hole 10 Guide hole 11 Bonding wire 12 Frame cover

Claims (2)

(57) [Claims] 1. A semiconductor package in which a semiconductor element is mounted on a base and the semiconductor element is electrically connected to a metal wiring disposed on a frame by a bonding wire, wherein the element mounting portion of the base is formed in a projection shape. , the element mounting portion is inserted into the frame, this element
A semiconductor element package comprising: a guide hole having an inner shape larger than an outer shape of a child mounting part; and an element mounting hole in which the semiconductor element is fitted. 2. A semiconductor package according to claim 1, wherein the semiconductor device package, characterized in that the element mounting portion and the cube-like projections.