JP2574582Y2 - Thermal protection device for semiconductor devices - Google Patents
Thermal protection device for semiconductor devicesInfo
- Publication number
- JP2574582Y2 JP2574582Y2 JP1992052821U JP5282192U JP2574582Y2 JP 2574582 Y2 JP2574582 Y2 JP 2574582Y2 JP 1992052821 U JP1992052821 U JP 1992052821U JP 5282192 U JP5282192 U JP 5282192U JP 2574582 Y2 JP2574582 Y2 JP 2574582Y2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- semiconductor element
- radiator
- temperature detecting
- detecting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】本考案は、電源回路等に用いられ
る電力制御用半導体素子の、電気絶縁と半導体素子の過
度の発熱から半導体素子を保護する半導体素子の熱保護
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermal protection device for a semiconductor element for protecting a semiconductor element from electric heating and excessive heat generation of a semiconductor element for a power control semiconductor element used in a power supply circuit or the like.
【０００２】[0002]
【従来の技術】電源回路等に用いられる電力制御用の主
要な半導体素子の発熱による破損を防止するため、従来
は図２に示すように、放熱器１に電気絶縁性にすぐれ熱
伝導性のよい電気絶縁板２を介して、半導体素子３を取
り付けて半導体素子に発生した熱の放熱を促進するとと
もに、一方放熱器１に取り付けた温度検出素子４により
放熱器が半導体素子の発熱により昇温した温度を検出し
て、半導体素子３への通電や放熱器１への送風を必要に
応じて制御するようにしていた。2. Description of the Related Art Conventionally, as shown in FIG. 2, a radiator 1 has excellent electrical insulation and thermal conductivity to prevent damage due to heat generation of a main semiconductor element for power control used in a power supply circuit or the like. The semiconductor element 3 is attached via the good electric insulating plate 2 to promote heat radiation of the heat generated in the semiconductor element, and the temperature detector 4 attached to the radiator 1 raises the temperature of the radiator by the heat generated by the semiconductor element. The detected temperature is detected, and the energization of the semiconductor element 3 and the blowing of air to the radiator 1 are controlled as necessary.
【０００３】[0003]
【考案が解決しようとする課題】温度検出素子は発熱す
る半導体素子のアルミニウム等の金属板又は金属ブロッ
クからなる放熱器に取り付けられており、温度検出素子
は半導体素子が取り付けられた放熱器に一緒に取り付け
られていても、半導体素子と放熱器の間の熱抵抗、放熱
器の熱伝導度、放熱器と温度検出素子との間に熱抵抗が
存在し、半導体素子の発熱温度を正確に検出することは
できなかった。このため温度検出素子が検出する検出温
度は信頼性に問題が生じ、特に放熱器と半導体素子との
間には、電気絶縁板が介在しているため、放熱器に取り
付けた温度検出素子による半導体素子の検出温度の誤差
は大きなものであった。このため半導体素子をそれ自体
からの発熱から保護するには不十分であり、時として半
導体素子の発熱が進み半導体素子への過電流により半導
体素子が破損してしまうという問題があった。本考案
は、半導体素子からの発熱が放熱器から十分に放熱され
ると共に、半導体素子の温度を正確に検出できるように
した半導体素子の熱保護装置を提供することにある。The temperature detecting element is mounted on a radiator made of a metal plate or a metal block of a semiconductor element that generates heat, such as aluminum, and the temperature detecting element is mounted together with the radiator on which the semiconductor element is mounted. Even if it is mounted on the device, the thermal resistance between the semiconductor element and the radiator, the thermal conductivity of the radiator, and the thermal resistance between the radiator and the temperature detection element accurately detect the heat generation temperature of the semiconductor element. I couldn't. For this reason, the detection temperature detected by the temperature detecting element causes a problem in reliability. In particular, since an electric insulating plate is interposed between the radiator and the semiconductor element, the temperature detected by the temperature detecting element attached to the radiator is reduced. The error in the detected temperature of the element was large. For this reason, it is not enough to protect the semiconductor element from the heat generated from the semiconductor element itself, and there has been a problem that the heat generation of the semiconductor element sometimes progresses and the semiconductor element is damaged by an overcurrent to the semiconductor element. SUMMARY OF THE INVENTION It is an object of the present invention to provide a thermal protection device for a semiconductor device, in which heat generated from the semiconductor device is sufficiently radiated from a radiator and the temperature of the semiconductor device can be accurately detected.
【０００４】[0004]
【課題を解決するための手段】本考案は、半導体素子か
ら発する熱の放散を、放熱を行うための放熱器と半導体
素子との間において、電気絶縁を保証し、かつ半導体素
子の温度を検出する温度検出素子と半導体素子と放熱器
との間に挿入する電気絶縁材とを一体構造とした熱保護
装置とするもので、熱抵抗の小さい、又電気絶縁特性に
優れた熱伝導部材を用いて被覆した温度検出素子と電気
絶縁板とを一体に成形して、半導体素子を放熱器に取り
付けた電気絶縁特性を持つ半導体素子の熱保護装置とす
る。SUMMARY OF THE INVENTION The present invention dissipates heat generated from a semiconductor element by ensuring electrical insulation between a radiator for radiating heat and the semiconductor element and detecting the temperature of the semiconductor element. The thermal protection device has an integrated structure of a temperature detecting element, a semiconductor element, and an electrical insulating material inserted between the radiator, and uses a heat conductive member having low thermal resistance and excellent electrical insulating properties. The temperature detecting element and the electric insulating plate covered with the semiconductor element are integrally formed to form a heat protector for a semiconductor element having electric insulating properties in which the semiconductor element is mounted on a radiator.
【０００５】即ち本考案は、半導体素子から発する熱の
放散を促進する放熱器と、前記半導体素子の温度を検出
する温度素子とを含む半導体素子の熱保護装置に於て、
熱抵抗の小さい熱伝導特性と電気絶縁特性を有する材料
により温度検出素子を包み形成した温度検出素子部と、
前記半導体素子と放熱器との間に介挿する温度検出素子
平面部を前記温度検出素子部と一体に形成し取り付けた
ことを特徴とする半導体素子の熱保護装置である。That is, the present invention provides a heat protection device for a semiconductor device including a radiator for promoting the dissipation of heat generated from the semiconductor device and a temperature device for detecting the temperature of the semiconductor device.
A temperature detecting element portion formed by wrapping the temperature detecting element with a material having a small heat resistance and a heat conductive property and an electrical insulating property,
A thermal protection device for a semiconductor element, wherein a temperature detection element flat portion inserted between the semiconductor element and a radiator is formed integrally with the temperature detection element section and attached.
【０００６】[0006]
【作用】アルミニウム等の金属板又は金属ブロックで作
られた放熱器と、電力制御用の発熱する半導体素子との
間に電気絶縁特性と熱伝導特性に優れた材料を用い、一
体に一端に温度検出素子を埋設した電気絶縁層と熱伝導
層を介して半導体素子を放熱器にねじ止めする構造とす
ることにより、放熱器と半導体素子との間の電気絶縁特
性を保証し、半導体素子が発熱した時、半導体素子の発
熱を急速に温度検出素子に伝達することにより半導体素
子への通電量の制御や、放熱器への送風をより急速に作
動することが出来る半導体素子の熱保護装置とする。[Function] A material having excellent electrical insulation properties and heat conduction properties is used between a radiator made of a metal plate or a metal block of aluminum or the like and a heat-generating semiconductor element for power control. The structure in which the semiconductor element is screwed to the radiator via the electrical insulation layer and the heat conductive layer in which the detection element is embedded ensures electrical insulation characteristics between the radiator and the semiconductor element, and the semiconductor element generates heat. When this is done, the heat generation of the semiconductor element is quickly transmitted to the temperature detection element to control the amount of electricity supplied to the semiconductor element and the heat protection device for the semiconductor element that can more quickly operate the air blower to the radiator. .
【０００７】[0007]
【実施例】本考案の一実施例による半導体素子の熱保護
装置を図１に示す。図示の半導体素子の熱保護装置は、
熱伝導性に優れたアルミニウム等の金属材料に放熱フィ
ンを取り付けた形状の放熱器１１と、放熱器１１には例
えばデンカ（株）製のデンカボロンナイトライド、窒化
アルミニウム、シリコン樹脂等の、熱抵抗の小さい熱伝
導材であって、しかも電気絶縁材の材料を組み合わせて
用い、一体で埋設された温度検出素子１６と温度検出素
子平面部１４とは、半導体素子１３にねじ１７により密
着固定されている。この半導体素子１３は例えばスイッ
チング電源回路の出力電力を制御するスイッチングトラ
ンジスタ等である。一方温度検出素子１６と半導体素子
１３とを密着固定するため、温度検出素子は熱伝導と電
気絶縁材特性を有する材料で包み形成され、温度検出素
子１６と同じ熱伝導と電気絶縁特性を有する材料からな
る温度検出素子平面部は温度検出素子部１６と一体に形
成される。温度検出素子平面部１４は半導体素子１３と
放熱器１１の間に挿入固定されるので、半導体素子１３
の温度は温度検出素子と一体の温度検出素子平面部１４
より温度検出素子１６へ伝達され温度検出を行うもので
あり、この温度検出素子１６が検出した検出温度に基づ
いて半導体素子１３への通電や、放熱器１１への送風を
必要に応じて制御する。本考案の構造によると、半導体
素子１３から発する熱は温度検出素子平面部１４を経て
一体に形成された温度検出素子１６に直接伝わるので、
検出温度の信頼性は向上する。なお、温度検出素子には
リードスイッチと環状永久磁石、環状感温磁性体を組み
合わせた感温リードスイッチ、又はサーミスタ温度素子
等を用いる。温度検出素子の形状及び、温度検出素子の
電気的接続方法には、様々な設計変更が可能なことはい
うまでもない。1 shows a thermal protection device for a semiconductor device according to an embodiment of the present invention. The illustrated semiconductor device thermal protection device
A radiator 11 in which heat radiation fins are attached to a metal material such as aluminum having excellent heat conductivity, and a heat radiator 11 such as denka boron nitride, aluminum nitride, silicon resin or the like manufactured by Denka Corporation. The temperature detecting element 16 and the temperature detecting element flat portion 14, which are heat conductive materials having a small resistance and are combined with an electric insulating material, are tightly fixed to the semiconductor element 13 by screws 17. ing. The semiconductor element 13 is, for example, a switching transistor for controlling the output power of a switching power supply circuit. On the other hand, in order to tightly fix the temperature detecting element 16 and the semiconductor element 13, the temperature detecting element is formed by wrapping with a material having heat conduction and electric insulating properties, and having the same heat conduction and electric insulating properties as the temperature detecting element 16. Is formed integrally with the temperature detecting element section 16. Since the temperature detecting element flat portion 14 is inserted and fixed between the semiconductor element 13 and the radiator 11, the semiconductor element 13
The temperature of the temperature detecting element flat portion 14 integrated with the temperature detecting element
The temperature is transmitted to the temperature detecting element 16 to perform temperature detection. Based on the detected temperature detected by the temperature detecting element 16, the power supply to the semiconductor element 13 and the blowing to the radiator 11 are controlled as necessary. . According to the structure of the present invention, since the heat generated from the semiconductor element 13 is directly transmitted to the integrally formed temperature detecting element 16 via the temperature detecting element flat portion 14,
The reliability of the detected temperature is improved. As the temperature detecting element, a temperature-sensitive reed switch combining a reed switch and an annular permanent magnet, an annular temperature-sensitive magnetic material, a thermistor temperature element, or the like is used. It goes without saying that various design changes can be made to the shape of the temperature detecting element and the method of electrically connecting the temperature detecting element.
【０００８】[0008]
【考案の効果】以上説明したように、本考案によるアル
ミニウム金属等で作られた放熱器と半導体素子との間の
電気絶縁板に、電気絶縁と熱伝導性に優れた材料により
温度検出素子と一体に形成した温度検出素子平面部を取
り付けた構造とすることにより、半導体素子からの放熱
器への放熱が十分行われると共に、半導体素子の温度を
誤差少なく検出でき、従って、半導体素子の発熱による
破損を防止できる半導体素子の熱保護装置を提供できる
ようになった。As described above, the electric insulating plate between the radiator made of aluminum metal or the like according to the present invention and the semiconductor element is provided with the temperature detecting element by the material having excellent electric insulation and thermal conductivity. By adopting a structure in which the temperature detecting element flat portion formed integrally is attached, heat radiation from the semiconductor element to the radiator can be sufficiently performed, and the temperature of the semiconductor element can be detected with a small error. It has become possible to provide a semiconductor device thermal protection device that can prevent breakage.
【図１】本考案による半導体素子の熱保護装置の一実施
例を示す外観斜視図。FIG. 1 is an external perspective view showing one embodiment of a semiconductor device thermal protection device according to the present invention.
【図２】従来例の外観斜視図。FIG. 2 is an external perspective view of a conventional example.
１，１１ 放熱器 ２ 電気絶縁板 ３，１３ 半導体素子 ４，１６ 温度検出素子 １４ 温度検出素子平面部 １７ ねじ 1,11 radiator 2 electric insulating plate 3,13 semiconductor element 4,16 temperature detecting element 14 temperature detecting element flat part 17 screw
Claims (1)
る放熱器と、前記半導体素子の温度を検出する温度検出
素子とを含む半導体素子の熱保護装置に於て、熱抵抗の
小さい熱伝導特性と電気絶縁特性を有する材料により温
度検出素子を包み形成した温度検出素子部と、前記半導
体素子と放熱器との間に介挿する温度検出素子平面部を
前記温度検出素子部と一体に形成し取り付けたことを特
徴とする半導体素子の熱保護装置。In a thermal protection device for a semiconductor device including a radiator that promotes dissipation of heat generated from the semiconductor device and a temperature detection device that detects the temperature of the semiconductor device, a heat conduction characteristic having a small thermal resistance. And a temperature detecting element portion formed by enclosing the temperature detecting element with a material having an electrical insulating property, and a temperature detecting element flat portion interposed between the semiconductor element and the radiator are formed integrally with the temperature detecting element portion. A thermal protection device for a semiconductor device, wherein the thermal protection device is attached.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1992052821U JP2574582Y2 (en) | 1992-07-03 | 1992-07-03 | Thermal protection device for semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1992052821U JP2574582Y2 (en) | 1992-07-03 | 1992-07-03 | Thermal protection device for semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH069153U JPH069153U (en) | 1994-02-04 |
| JP2574582Y2 true JP2574582Y2 (en) | 1998-06-18 |
Family
ID=12925516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1992052821U Expired - Lifetime JP2574582Y2 (en) | 1992-07-03 | 1992-07-03 | Thermal protection device for semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2574582Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3889562B2 (en) * | 2000-09-04 | 2007-03-07 | 株式会社日立製作所 | Semiconductor device |
| WO2015059735A1 (en) * | 2013-10-22 | 2015-04-30 | 今井 満 | Power supply apparatus |
-
1992
- 1992-07-03 JP JP1992052821U patent/JP2574582Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH069153U (en) | 1994-02-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
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