JP2569560B2 - Semiconductor breaker - Google Patents

Semiconductor breaker

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Publication number
JP2569560B2
JP2569560B2 JP62133002A JP13300287A JP2569560B2 JP 2569560 B2 JP2569560 B2 JP 2569560B2 JP 62133002 A JP62133002 A JP 62133002A JP 13300287 A JP13300287 A JP 13300287A JP 2569560 B2 JP2569560 B2 JP 2569560B2
Authority
JP
Japan
Prior art keywords
series
semiconductor
transformer
circuit
circuit breaker
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62133002A
Other languages
Japanese (ja)
Other versions
JPS63296517A (en
Inventor
研一 荒井
久 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62133002A priority Critical patent/JP2569560B2/en
Publication of JPS63296517A publication Critical patent/JPS63296517A/en
Application granted granted Critical
Publication of JP2569560B2 publication Critical patent/JP2569560B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、外部からオン・オフ制御の可能な半導体
素子すなわち半導体スイッチング素子を利用して、交流
回路に発生した短絡事故を高速に除去する交流回路用半
導体遮断器に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention uses a semiconductor element that can be turned on / off externally, that is, a semiconductor switching element, to quickly remove a short circuit accident occurring in an AC circuit. The present invention relates to a semiconductor circuit breaker for an AC circuit.

〔従来の技術〕 通常、電力系統などの回路で短絡事故が発生した場
合、遮断器で数サイクル後回路を遮断する方式が一般的
である。しかし、このような通電電極を開離して電流を
遮断する機械式遮断器においては、第4図に示すように
時間T1で短絡した後電極が開離し電流零の時間T2で遮断
することによる大電流の短絡電流が数サイクル通流する
ことに対して、送電線あるいはケーブル、また電気機器
は、それに耐え得るような短絡強度を有する性能が要求
され、建設コスト,機器単体コストを大巾に膨張させる
要因となっている。
[Prior Art] Generally, when a short circuit accident occurs in a circuit such as an electric power system, a method of interrupting a circuit after several cycles by a circuit breaker is generally used. However, In such a powered electrode to block the opening and release the current mechanical circuit breaker, that the electrode was short-circuited at time T 1 as shown in Figure 4 is blocked in a time T 2 of the open release current zero However, transmission lines, cables, and electrical equipment are required to have short-circuit strength that can withstand the short-circuit current of a large current caused by several cycles. It is a factor to expand.

これに対し、近年のパワーエレクトロニクスの進歩に
より、半導体を使用した遮断器あるいは限流器などが開
発されている。半導体を使用することにより、従来とは
比較できぬ速さで事故電流を限流できるため、前記問題
点を大巾に改善できることが知られている。この半導体
遮断器は、外部からオン・オフ制御の可能な自己消弧形
半導体素子たとえばGTOサイリスタ素子を多数直並列に
接続して高圧,大電流の遮断を可能にしたものである。
第5図に示すように、時間T1で短絡事故が発生した場合
に、GTOサイリスタのターンオフ時間は約30μs程度で
あるので、ターンオフ時間T3後に短絡電流を限流回路に
転流することにより、前記した機械式遮断器よりはるか
に短時間T4で、短絡電流が小さい発生初期状態で限流遮
断することができる。
On the other hand, with the recent advancement of power electronics, breakers or current limiters using semiconductors have been developed. It is known that the use of a semiconductor allows the fault current to be limited at a speed incomparable with the prior art, so that the above problem can be greatly improved. In this semiconductor circuit breaker, a large number of self-extinguishing semiconductor elements, for example, GTO thyristor elements, which can be turned on / off externally, are connected in series and parallel to enable high voltage and high current interruption.
As shown in FIG. 5, when a short-circuit fault occurs at time T 1, since the turn-off time of the GTO thyristor is about 30 .mu.s, by commutation circuit current in current limiting circuit after the turn-off time T 3 , a much shorter time T 4 from mechanical circuit breaker described above, can be blocked limiting short-circuit current is small generator initial state.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

このように構成された半導体遮断器の問題点は、多数
の半導体素子を同時に制御する際の制御の同時性、各素
子の電圧分担,電流分担の一様性など、解決に困難を伴
う技術的問題点が存在しかつ遮断器としてのコストが膨
大となることである。
The problems of the semiconductor circuit breaker configured in this way are technical difficulties to solve, such as control simultaneity when controlling a large number of semiconductor devices simultaneously, uniformity of voltage sharing and current sharing of each device. There is a problem and the cost as a circuit breaker becomes enormous.

この発明の目的は、従来構成の半導体遮断器における
如き技術的問題点が少なく、かつ、コストがさほど高く
ならないですむ半導体遮断器を提供することである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor circuit breaker which has few technical problems as in the conventional semiconductor circuit breaker and does not require much cost.

〔問題点を解決するための手段〕[Means for solving the problem]

上記目的を達成するために、この発明によれば、主変
圧器の2次側回路に直列に挿入され1次巻線が前記主変
圧器により励磁される直列変圧器と、外部からオン・オ
フ制御の可能な自己消弧形半導体素子が逆並列に接続さ
れてなり前記直列変圧器の2次巻線に接続される半導体
スイッチとを用いて半導体遮断器を構成し、前記主変圧
器の2次側回路の電流遮断時に先ず前記半導体スイッチ
をオフ制御することにより前記直列変圧器の1次巻線を
塞流線輪として作用させて電流を限流遮断せしめるもの
とする。
To achieve the above object, according to the present invention, a series transformer inserted in series into a secondary circuit of a main transformer and having a primary winding excited by the main transformer, A semiconductor breaker is formed by using a semiconductor switch that is connected in anti-parallel with a controllable self-extinguishing type semiconductor element and is connected to a secondary winding of the series transformer. When the current of the secondary circuit is cut off, the semiconductor switch is first turned off so that the primary winding of the series transformer acts as an obstruction loop to cut off the current.

〔作用〕[Action]

以上のように半導体遮断器を構成すれば、直列変圧器
の2次巻線電圧を任意に設定することができるから、こ
の2次巻線に接続される半導体スイッチを構成する半導
体素子の直列段数や並列数を任意に変えることができ、
たとえば直列段数を少なくして制御の同時性と素子の電
圧分担の問題とを一挙に解決して電流分担の問題のみを
容易に解決可能とするとともに、以下の実施例の項にお
いて詳細を説明するように、直列変圧器の2次巻線回路
の構成により直列変圧器が小容量のものですみ、半導体
遮断器のコストが大きく低減されるというメリットが生
ずる。しかも、前記したように半導体スイッチは1サイ
クル以内に電流遮断可能なので通常の機械式遮断器を使
用する場合と比して半導体遮断器の容量を小さくでき
る。
By configuring the semiconductor circuit breaker as described above, the secondary winding voltage of the series transformer can be set arbitrarily. Therefore, the number of series-connected semiconductor elements constituting the semiconductor switch connected to the secondary winding And the number of parallels can be changed arbitrarily,
For example, by reducing the number of series stages to simultaneously solve the problems of control concurrency and element voltage sharing, it is possible to easily solve only the current sharing problem, and details will be described in the following embodiments. As described above, the configuration of the secondary winding circuit of the series transformer requires only a small capacity of the series transformer, and has an advantage that the cost of the semiconductor circuit breaker is greatly reduced. Further, as described above, since the current of the semiconductor switch can be cut off within one cycle, the capacity of the semiconductor breaker can be reduced as compared with the case where a normal mechanical breaker is used.

なお、以上の構成による半導体遮断器による電流の遮
断は、本質的には、直列変圧器の1次巻線を塞流線輪と
する限流遮断であり、主変圧器の2次側回路には直列変
圧器の1次巻線に対する励磁電流が残るから、この励磁
電流を完全に遮断するための断路器などの開閉装置を主
変圧器の2次側回路内に付加してもよい。
In addition, the interruption of the current by the semiconductor circuit breaker having the above configuration is essentially a current-limiting interruption in which the primary winding of the series transformer is an obstruction loop, and is connected to the secondary circuit of the main transformer. Since the exciting current for the primary winding of the series transformer remains, a switching device such as a disconnector for completely shutting off the exciting current may be added to the secondary circuit of the main transformer.

〔発明の実施例〕(Example of the invention)

次に本発明の実施例について説明する。第1図はこの
発明の第1の実施例を単相回路で表わしたものであり、
通常主変圧器1及び負荷4で形成されている回路に、半
導体スイッチを接続させるための直列変圧器2及び半導
体スイッチ3を付加する。この半導体スイッチはたとえ
ば複数の自己消弧形素子として知られているGTOサイリ
スタ素子を直並列に接続したものを逆並列に接続して構
成する。常時はこの半導体スイッチはオンされているの
で直列変圧器2の1次側には殆ど電圧は発生しない。こ
のため半導体スイッチがオンしている場合は前記付加回
路が無いのと同様である。しかし、第1図に示すように
負荷が短絡される事故が発生した場合、変流器5により
電流を検出し、電流の異常を検知する制御部6により事
故を検知し、半導体スイッチ3をオフさせる。半導体ス
イッチ3がオフすると、直列変圧器2の1次側から見た
インピーダンスが瞬時に大きくなることにより、主変圧
器1の2次電圧は直列変圧器2の1次巻線に印加され、
負荷側電圧は零となり、回路電流は急速に限流される。
Next, examples of the present invention will be described. FIG. 1 shows a first embodiment of the present invention by a single-phase circuit.
In general, a series transformer 2 and a semiconductor switch 3 for connecting a semiconductor switch are added to a circuit formed by the main transformer 1 and the load 4. This semiconductor switch is formed by connecting a plurality of GTO thyristor elements known as self-turn-off devices in series and parallel, for example, in antiparallel. Since the semiconductor switch is normally on, almost no voltage is generated on the primary side of the series transformer 2. Therefore, when the semiconductor switch is on, it is the same as the absence of the additional circuit. However, when an accident occurs in which the load is short-circuited as shown in FIG. Let it. When the semiconductor switch 3 is turned off, the impedance seen from the primary side of the series transformer 2 instantaneously increases, so that the secondary voltage of the main transformer 1 is applied to the primary winding of the series transformer 2,
The load side voltage becomes zero, and the circuit current is rapidly limited.

第1図の方法では、変圧器1と変圧器2の容量は等し
いものが必要となる。これを改善するようにした実施例
が第2図に示すものである。
In the method shown in FIG. 1, the transformers 1 and 2 need to have the same capacity. FIG. 2 shows an embodiment in which this is improved.

主変圧器11に3次巻線113を設け、通常時にもE21とい
う電圧を直列変圧器12の1次側に出させるようにする。
この時E12=E21(E12は主変圧器11の2次側電圧)とし
てやれば直列変圧器12の容量は主変圧器の1/2の容量で
済むことになる。
The main transformer 11 to the tertiary winding 113 is provided, even during normal so as to issue a voltage of E 21 on the primary side of the series transformer 12.
At this time, if E 12 = E 21 (E 12 is the secondary voltage of the main transformer 11), the capacity of the series transformer 12 can be half that of the main transformer.

第3図に示すものは、また別の実施例であり、大容量
回路へ適用するための応用例である。すなわち、直列変
圧器22を多数の部分直列変圧器23…2Nに分割し、各部分
直列変圧器の1次巻線を直列に接続するとともに、この
部分直列変圧器と同数の3次以降の巻線213〜21Nを主変
圧器21に設け、各部分直列変圧器の2次巻線をこの3次
以降の巻線からそれぞれ半導体スイッチ233〜23Nを介し
て励磁するようにしたものであり、非常に大容量回路に
も適用が可能となる。
FIG. 3 shows another embodiment, which is an application example applied to a large-capacity circuit. That is, the series transformer 22 is divided into a number of partial series transformers 23... 2N, the primary windings of each partial series transformer are connected in series, and the same number of tertiary and subsequent windings as the partial series transformers are connected. Lines 213 to 21N are provided in the main transformer 21, and the secondary windings of the respective partial series transformers are excited from the tertiary and subsequent windings through the semiconductor switches 233 to 23N, respectively. In addition, it can be applied to a large capacity circuit.

〔発明の効果〕〔The invention's effect〕

回路の高速電流遮断を半導体スイッチを用いて行う場
合、従来のように直接半導体スイッチを回路に入れよう
とすると、半導体スイッチは当然その回路の電圧・電流
条件に耐え得る性能を要求される。ところが、この発明
によれば、適用回路には制約されず自由にその電流・電
圧・容量を設定できるため、多数の半導体素子を直並列
に接続する従来の半導体遮断器における技術的問題点を
少なくすることができ、かつ、主変圧器に3次巻線また
は3次以降の巻線を設けて直列変圧器または部分直列変
圧器の2次巻線を励磁するようにすることにより直列変
圧器の容量または部分直列変圧器の総容量を小さくする
ことができるから、遮断器のコストがさほど大きくなら
なくてすむ。しかも自己消弧形半導体素子のターンオフ
により機械式遮断器の遮断時間よりはるかに短時間で電
流遮断できるので、主変圧器に接続されている負荷の短
絡電流の発生初期の状態で限流させ遮断することができ
るという優れた利点を有する。このため、本発明の構成
原理に基づく半導体遮断器の適用範囲は無限に広がる。
その優れた限流・遮断特性が従来の交流回路に広く適用
されるようになれば、下位の系統に接続される機器は、
短絡耐量の思想を一新することができる。これによるコ
ストメリットは計り知れないものがあると考えられる。
When a high-speed current cutoff of a circuit is performed by using a semiconductor switch, if the semiconductor switch is directly inserted into the circuit as in the related art, the semiconductor switch is naturally required to have a performance capable of withstanding the voltage and current conditions of the circuit. However, according to the present invention, since the current, voltage, and capacity can be set freely without being restricted by the applied circuit, the technical problems in the conventional semiconductor circuit breaker that connects a large number of semiconductor elements in series and parallel are reduced. And providing a tertiary or tertiary winding on the main transformer to excite the secondary winding of the series or partial series transformer, Since the capacity or the total capacity of the partial series transformer can be reduced, the cost of the circuit breaker does not need to be so large. In addition, the current can be cut off in a much shorter time than the cut-off time of the mechanical circuit breaker by turning off the self-arc-extinguishing type semiconductor element, so the load connected to the main transformer is limited in the initial state of short-circuit current and cut off. Has the great advantage of being able to Therefore, the applicable range of the semiconductor circuit breaker based on the configuration principle of the present invention is infinitely widened.
If the excellent current limiting / cutoff characteristics become widely applied to conventional AC circuits, the equipment connected to the lower system will
The concept of short-circuit tolerance can be renewed. The cost merit of this is considered to be immeasurable.

【図面の簡単な説明】[Brief description of the drawings]

第1図,第2図および第3図はそれぞれ、本発明の第1,
第2および第3の実施例による半導体遮断器の回路構成
図であり、第4図および第5図はそれぞれ、機械式遮断
器および自己消弧形半導体素子からなる半導体遮断器の
電流遮断特性図である。 1,11,21……主変圧器、2,12,22……直列変圧器、23〜2N
……部分直列変圧器、113……3次巻線、213〜21N……
3次以降の巻線、3,13,233〜23N……半導体スイッチ。
FIG. 1, FIG. 2 and FIG. 3 respectively show the first and second embodiments of the present invention.
FIG. 4 is a circuit configuration diagram of a semiconductor circuit breaker according to the second and third embodiments, and FIGS. 4 and 5 are current interruption characteristic diagrams of a semiconductor circuit breaker including a mechanical circuit breaker and a self-extinguishing type semiconductor element, respectively. It is. 1,11,21 …… Main transformer, 2,12,22 …… Series transformer, 23-2N
…… Partial series transformer, 113 …… Tertiary winding, 213-21N ……
Third and subsequent windings, 3,13,233 to 23N ... Semiconductor switch.

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】主変圧器の2次側回路に直列に挿入され1
次巻線が前記主変圧器により励磁される直列変圧器と、
外部からオン・オフ制御可能な自己消弧形半導体素子が
逆並列に接続されてなり前記直列変圧器の2次巻線に接
続される半導体スイッチとを備え、前記主変圧器の2次
側回路の電流遮断時に先ず前記半導体スイッチをオフ制
御することにより前記直列変圧器の1次巻線を塞流線輪
として作用させて電流を限流遮断することを特徴とする
半導体遮断器。
1. A main transformer connected in series to a secondary circuit of a main transformer.
A series transformer in which a secondary winding is excited by the main transformer;
A semiconductor switch in which a self-extinguishing type semiconductor element that can be turned on / off from the outside is connected in anti-parallel and connected to a secondary winding of the series transformer, and a secondary circuit of the main transformer is provided. The semiconductor circuit breaker characterized in that the semiconductor switch is first turned off at the time of interrupting the current so that the primary winding of the series transformer acts as a blockage loop to cut off the current.
【請求項2】特許請求の範囲第1項記載の半導体遮断器
において、主変圧器は3次巻線を備えており、半導体ス
イッチが接続される直列変圧器の2次巻線はこのスイッ
チを介して前記3次巻線により励磁されていることを特
徴とする半導体遮断器。
2. A semiconductor circuit breaker according to claim 1, wherein the main transformer has a tertiary winding, and the secondary winding of the series transformer to which the semiconductor switch is connected is connected to this switch. Characterized by being excited by the tertiary winding via a semiconductor circuit breaker.
【請求項3】特許請求の範囲第1項記載の半導体遮断器
において、主変圧器の2次側回路に直列に挿入される直
列変圧器は、それぞれ1次巻線が互いに直列に接続され
た部分直列変圧器からなるとともに、前記主変圧器は1
次巻線および2次巻線のほかにこの部分直列変圧器と同
数の3次以降の巻線を備えて前記部分直列変圧器の2次
巻線にそれぞれ半導体スイッチを介して接続されている
ことを特徴とする半導体遮断器。
3. The semiconductor circuit breaker according to claim 1, wherein the series transformers inserted in series in the secondary circuit of the main transformer have respective primary windings connected in series. The main transformer is composed of a partial series transformer.
In addition to the secondary winding and the secondary winding, the same number of tertiary and subsequent windings as the partial series transformer are provided and connected to the secondary windings of the partial series transformer via semiconductor switches, respectively. A semiconductor circuit breaker characterized by the above-mentioned.
JP62133002A 1987-05-28 1987-05-28 Semiconductor breaker Expired - Fee Related JP2569560B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62133002A JP2569560B2 (en) 1987-05-28 1987-05-28 Semiconductor breaker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62133002A JP2569560B2 (en) 1987-05-28 1987-05-28 Semiconductor breaker

Publications (2)

Publication Number Publication Date
JPS63296517A JPS63296517A (en) 1988-12-02
JP2569560B2 true JP2569560B2 (en) 1997-01-08

Family

ID=15094488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62133002A Expired - Fee Related JP2569560B2 (en) 1987-05-28 1987-05-28 Semiconductor breaker

Country Status (1)

Country Link
JP (1) JP2569560B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4886047A (en) * 1972-02-15 1973-11-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4886047A (en) * 1972-02-15 1973-11-14

Also Published As

Publication number Publication date
JPS63296517A (en) 1988-12-02

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