JP2559717B2 - Selective chemical plating method - Google Patents

Selective chemical plating method

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Publication number
JP2559717B2
JP2559717B2 JP61283399A JP28339986A JP2559717B2 JP 2559717 B2 JP2559717 B2 JP 2559717B2 JP 61283399 A JP61283399 A JP 61283399A JP 28339986 A JP28339986 A JP 28339986A JP 2559717 B2 JP2559717 B2 JP 2559717B2
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JP
Japan
Prior art keywords
plating
chemical plating
molded product
polymer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61283399A
Other languages
Japanese (ja)
Other versions
JPS63137176A (en
Inventor
智 臼井
幸男 市川
英哲 安藤
Original Assignee
呉羽化学工業株式会社
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Filing date
Publication date
Application filed by 呉羽化学工業株式会社 filed Critical 呉羽化学工業株式会社
Priority to JP61283399A priority Critical patent/JP2559717B2/en
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Application granted granted Critical
Publication of JP2559717B2 publication Critical patent/JP2559717B2/en
Anticipated expiration legal-status Critical
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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1608Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1612Process or apparatus coating on selected surface areas by direct patterning through irradiation means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2026Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by radiant energy
    • C23C18/204Radiation, e.g. UV, laser
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0326Organic insulating material consisting of one material containing O
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0333Organic insulating material consisting of one material containing S
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/185Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

【発明の詳細な説明】 〔発明の背景〕 産業上の利用分野 本発明は、高分子化合物もしくは同組成物からなる成
形物に対して、所定部位に選択的に化学メッキを行なう
方法に関する。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for selectively performing chemical plating on a predetermined part of a molded article made of a polymer compound or the same composition.

従来の技術 高分子化合物及び繊維、充填剤等で強化した同組成物
からなる組成物に対してメッキを行なうことは、近年部
品の軽量化、小型化の要求に沿って、金属代替品の分野
及びプリント配線板等の分野で重要視されている。これ
らの分野のうちでも、特に、プリント配線板等の場合の
ようにメッキ部分と非メッキ部分とを所定のパターンに
従って形成させる分野は、化学メッキ法の特性を生かし
たものということができよう。
2. Description of the Related Art Plating a composition composed of the same composition reinforced with a polymer compound, fibers, and a filler has been used in the field of metal substitutes in accordance with the recent demand for weight reduction and size reduction of parts. It is also important in the field of printed wiring boards. Among these fields, it can be said that the field in which the plated portion and the non-plated portion are formed in accordance with a predetermined pattern, as in the case of a printed wiring board or the like, makes good use of the characteristics of the chemical plating method.

しかし、所定のパターンに従ってメッキ部分を設ける
方法は、従来の技術による場合は必ずしも満足すべきも
のではなかった。例えば、ポリアリーレンサルファイド
(以後、PASと略記する)もしくは同組成物をプリント
配線基板として使用する試みは特開昭57−96588号、特
開昭59−3991号各公報等に開示され、PASに光またはレ
ーザー照射をして、光照射部分表面に金属をメッキする
技術(特開昭60−110729号、特開昭61−127867号、特開
昭61−127868号各公報等)が開示されているところ、此
等の方法ではメッキ不要部分を接着インキもしくはマス
キングインキ等でマスクをしたのちに化学メッキを行な
うのであるが、接着インキあるいはマスキングインキ等
は製造工程中の苛酷な条件下に十分耐え得るものでなけ
ればならないという問題があり、また光照射部分のみに
メッキのつくポジ型の回路パターン形成法ではスルーホ
ール部分のメッキが困難となる欠点も有していた。
However, the method of providing the plated portion according to the predetermined pattern is not always satisfactory in the case of the conventional technique. For example, an attempt to use polyarylene sulfide (hereinafter abbreviated as PAS) or the same composition as a printed wiring board is disclosed in JP-A-57-96588 and JP-A-59-3991, and the like. A technique of irradiating light or laser to plate a metal on the surface irradiated with light is disclosed (Japanese Patent Laid-Open Nos. 60-110729, 61-127867, 61-127868, etc.). However, with these methods, chemical plating is performed after masking the unnecessary plating area with adhesive ink or masking ink, but the adhesive ink or masking ink, etc. does not sufficiently withstand the harsh conditions during the manufacturing process. However, there is a problem in that it is difficult to plate the through-hole portion in the positive type circuit pattern forming method in which plating is applied only to the light irradiation portion.

従って、此のような欠点を改善して、精密な回路パタ
ーンを選択的に化学メッキにより形成し得る技術の開発
が望まれていた。
Therefore, it has been desired to develop a technique capable of selectively forming a precise circuit pattern by chemical plating by improving these drawbacks.

〔発明の概要〕[Outline of Invention]

要 旨 本発明者らは先にPASもしくは同組成物からなる成形
物に対して、選択的に化学メッキを行なう方法を提案し
た(特願昭60−285242号)が、さらに鋭意研究した結
果、PAS以外にかなり多くの高分子もしくは同組成物か
らなる成形物に対しても、化学メッキを行なう際にメッ
キの前処理として、光を照射することにより照射部分が
選択的にメッキされない事実を見出し、本発明に到っ
た。
In summary, the present inventors previously proposed a method of selectively performing chemical plating on a molded product made of PAS or the same composition (Japanese Patent Application No. 60-285242), but as a result of further diligent research, In addition to PAS, we found the fact that even when a large number of polymers or compositions made of the same composition were used, the irradiated area was not selectively plated by irradiation with light as a pretreatment for plating during chemical plating. The present invention has been reached.

すなわち、本発明による選択的化学メッキ法は、分子
中に酸素もしくは硫黄原子を含んだ高分子化合物(PAS
は除く)もしくは同組成物からなる樹脂成形物に対して
化学メッキを行なう際に、あらかじめメッキ不用部分に
0.1〜600nmの波長を照射してメッキ不活性化領域を前記
成形物の当該樹脂の表面に直接設けたのち、化学メッキ
を行なうこと、を特徴とするものである。
That is, the selective chemical plating method according to the present invention uses a polymer compound (PAS) containing oxygen or sulfur atoms in the molecule.
However, when chemical plating is performed on a resin molded product made of the same composition, the parts not to be plated are previously
The method is characterized in that a plating inactivating region is directly provided on the surface of the resin of the molded product by irradiating it with a wavelength of 0.1 to 600 nm, and then chemical plating is performed.

効 果 本発明の方法によれば、PAS以外の含酸素ないし含硫
黄高分子成形物上に特定波長の光を照射することにより
容易に導電性の回路を化学メッキにより選択的に形成し
た金属メッキを施すことができるので、マスキングイン
キ等を使用することなく極めて容易にかつ、正確に各種
の高分子物質のプリント配線板を製造することができ
る。
Effects According to the method of the present invention, metal plating in which conductive circuits are selectively formed by chemical plating easily by irradiating oxygen-containing or sulfur-containing polymer moldings other than PAS with light of a specific wavelength Therefore, printed wiring boards of various polymer substances can be manufactured very easily and accurately without using a masking ink or the like.

本発明は対象高分子化合物が分子中に酸素原子または
硫黄原子を含有するものに一般に適用されるので、要求
される機能に合せて高分子物質を選ぶことができるが、
これは本発明の他の有用性の一つである。
Since the subject polymer compound is generally applied to those containing an oxygen atom or a sulfur atom in the molecule, the polymer substance can be selected according to the required function.
This is one of the other utilities of the present invention.

本発明による方法はネガ型のパターン形成法なので、
スルーホール部分のメッキも容易という利点を有する。
また、本発明の方法をプリント配線板の製造に応用する
ならば、射出成形で任意の形状に成形した成形物基板上
に所望の回路パターンを作ることができ、いわゆる三次
元プリント配線板の製造を簡略かつ容易に行なうことが
できる。また、シートあるいはフィルム状に成形した成
形物に対して、本発明の方法を応用するならば、フレキ
シブルプリント配線板の製造ができることはいうまでも
ない。
Since the method according to the present invention is a negative pattern forming method,
It also has an advantage that plating of the through hole portion is easy.
Further, if the method of the present invention is applied to the manufacture of a printed wiring board, a desired circuit pattern can be formed on a molded product substrate molded into an arbitrary shape by injection molding, and a so-called three-dimensional printed wiring board can be manufactured. Can be performed simply and easily. Needless to say, a flexible printed wiring board can be manufactured by applying the method of the present invention to a molded product formed into a sheet or a film.

なお、プリント配線基板の製造は本発明の利用の一例
にすぎず、本発明の方法は高分子成形物にメッキをする
必要のある場合には有効に使用出来ることはいうまでも
ない。表面の構造および元素組成の異るPAS以外の分子
中に酸素もしくは硫黄原子を含んだ高分子化合物につい
ても、PASと同様に、特定の波長を照射すればその化学
メッキ性が抑えられるということは思いがけないことで
あった。
Needless to say, the production of a printed wiring board is only one example of the use of the present invention, and the method of the present invention can be effectively used when it is necessary to plate a polymer molded product. Even for polymer compounds containing oxygen or sulfur atoms in molecules other than PAS, which have different surface structures and elemental compositions, it is possible to suppress the chemical plating property by irradiating a specific wavelength, as with PAS. It was unexpected.

〔発明の具体的説明〕[Specific Description of the Invention]

高分子成形物 本発明に使用される高分子化合物 本発明に主として用いられる高分子は、分子中に酸素
原子もしくは硫黄原子を含んだものであってPAS以外の
もの、である。ガラス転移点が−40℃以上のホモポリマ
ー及びコポリマー(たとえばブロックコポリマー)が好
ましい。例えば、ポリスルホン、ポリエーテルスルホ
ン、ポリエーテルイミド、ポリエーテルエーテルケト
ン、ポリアリレンテレフタレート等のホモポリマー及び
ブロックコポリマーが本発明の対象高分子化合物として
使用できる(以後、これをA高分子と略記する)。
Polymer molded product Polymer compound used in the present invention The polymer mainly used in the present invention is a polymer containing an oxygen atom or a sulfur atom in the molecule and other than PAS. Homopolymers and copolymers (for example, block copolymers) having a glass transition temperature of −40 ° C. or higher are preferable. For example, homopolymers and block copolymers of polysulfone, polyether sulfone, polyether imide, polyether ether ketone, polyarylene terephthalate, etc. can be used as the target polymer compound of the present invention (hereinafter, abbreviated as A polymer). ).

化学メッキを施すべき高分子成形物は、A高分子単独
からなるもののほかに、副成分として他の成分を含んで
なる組成物からなるものであってもよく、またその方が
好ましい場合も多い。このような組成物としては、各種
充填剤たとえばマイカ、TiO2、Al2O3、CaCO3、カーボン
黒、タルク、Ca2SiO4、MgCO3、ZnO、CaOなどの粉末充填
剤等、各種合成樹脂たとえば上記樹脂同志のブレンドの
他、ポリイミド、ポリアミド、ポリアリーレン、ポリフ
ェニレンエーテル、ポリカーボネート、ポリオレフィ
ン、ABS、ポリ塩化ビニル、ポリメチルメタクリレー
ト、弗素樹脂等とのブレンドを例示することができる。
The polymer molded product to be subjected to chemical plating may be, in addition to the polymer A alone, a composition containing other components as subcomponents, and in many cases, it is preferable. . As such a composition, various fillers such as mica, TiO 2 , Al 2 O 3 , CaCO 3 , carbon black, talc, Ca 2 SiO 4 , MgCO 3 , ZnO, CaO, etc. Examples of the resin include blends of the above resins, and blends with polyimide, polyamide, polyarylene, polyphenylene ether, polycarbonate, polyolefin, ABS, polyvinyl chloride, polymethylmethacrylate, fluororesin and the like.

これらの副成分として樹脂を併用するときは、全樹脂
成分中の主要部をA高分子が占めなければならない。
When a resin is used in combination as these subcomponents, the polymer A must occupy the main part in all the resin components.

また、上記のような副成分の有無にかかわらず、本発
明の対象成形物は、繊維状強化剤を配合してなるものが
好ましいことがしばしば認められる。この場合の繊維と
しては、合成無機繊維(炭素繊維、ガラス繊維、シリカ
繊維、アルミナ繊維、セラミックファイバー等)、天然
無機繊維(ロックウールなど)、合成有機繊維(芳香族
アミド繊維、フェノール繊維、セルローズ繊維など)ま
たは天然有機繊維(パルプ、木綿など)などのいずれで
もよい。特に、耐熱性、強度、経済性等の点から、ガラ
ス繊維が好ましい。繊維の形態は、任意であり得るし、
その表面を処理したものが有効であることは勿論であ
る。
In addition, it is often recognized that the target molded article of the present invention is preferably a blend of a fibrous reinforcing agent regardless of the presence or absence of the above-mentioned subcomponents. As the fibers in this case, synthetic inorganic fibers (carbon fiber, glass fiber, silica fiber, alumina fiber, ceramic fiber, etc.), natural inorganic fiber (rock wool, etc.), synthetic organic fiber (aromatic amide fiber, phenol fiber, cellulose) Fibers) or natural organic fibers (pulp, cotton, etc.). In particular, glass fibers are preferable from the viewpoint of heat resistance, strength, economical efficiency and the like. The form of the fibers can be arbitrary,
Needless to say, the one whose surface is treated is effective.

これらの充填材の他に、少量のカップリング材、抗酸
化材、着色料、光増感材等も用いることができる。
In addition to these fillers, a small amount of coupling material, antioxidant, colorant, photosensitizer and the like can be used.

これらの各種成分からなる組成物中でA高分子は全体
の50容量%以上を占めることが好ましい。この範囲より
少ないとA高分子の特性を十分発揮することができない
からである。なお、容量%は、各成分の重量と比重とか
ら計算することができる。
In the composition comprising these various components, the polymer A preferably accounts for 50% by volume or more of the whole. This is because if the amount is less than this range, the characteristics of polymer A cannot be fully exhibited. The volume% can be calculated from the weight of each component and the specific gravity.

本発明に用いるべきA高分子成形物を得るための成形
方法には特に限定はなく、射出成形、押出成形、圧縮成
形などを用いることができる。なお、本発明で「成形
物」という場合は、ペレット、グラニュール等を包含す
るものである。
The molding method for obtaining the A polymer molded product to be used in the present invention is not particularly limited, and injection molding, extrusion molding, compression molding and the like can be used. In the present invention, the term "molded product" includes pellets, granules and the like.

選択的メッキ性の付与 本発明による選択メッキ法の付与は、A高分子成形物
のメッキ不要部分に特定の波長の光を照射することから
なる。
Addition of selective plating property The application of the selective plating method according to the present invention consists of irradiating a non-plating portion of the A polymer molding with light of a specific wavelength.

照射する光としては、波長が0.1〜600nm、好ましくは
190〜436nm、のものが用いられ、成形物上に化学メッキ
が付着しなくなるに十分な照射条件が選ばれる。また、
A高分子もしくはその組成物に光増感剤を分散させてお
くことにより照射時間を短縮することができる。また、
酸素などの活性に富んだ雰囲気で照射を行うことによっ
て照射時間を短縮することができる。照射時間は、光源
迄の距離、光源の強度及び照射雰囲気にもよるが、好ま
しくは0.01秒以上で1000時間未満の範囲で行なわれる。
0.01秒未満では光照射効果が得難く、1000時間以上では
生産性が悪くなる。特に好ましい照射時間は、0.01秒〜
100時間である。
The light to be irradiated has a wavelength of 0.1 to 600 nm, preferably
Those having a wavelength of 190 to 436 nm are used, and irradiation conditions sufficient to prevent chemical plating from adhering to the molded product are selected. Also,
The irradiation time can be shortened by dispersing the photosensitizer in the polymer A or its composition. Also,
The irradiation time can be shortened by performing irradiation in an atmosphere rich in activity such as oxygen. The irradiation time depends on the distance to the light source, the intensity of the light source and the irradiation atmosphere, but is preferably 0.01 seconds or more and less than 1000 hours.
If it is less than 0.01 seconds, it is difficult to obtain the light irradiation effect, and if it is 1000 hours or more, the productivity becomes poor. Particularly preferred irradiation time is 0.01 seconds to
100 hours.

光源としては、高圧水銀燈、低圧水銀燈、超高圧水銀
燈、クセノンランプ、カーボンアーク灯、蛍光灯、ハロ
ゲンランプ等が適している。A高分子成形物に選択的メ
ッキ性を付与するには、この成形物基板上に回路等をア
ルミ箔等でマスクし或いはネガ型のレジストを使用して
マスクしてから光を照射する。十分に光を照射した後、
マスクを除き、常法によりカタライジング処理して、化
学メッキ処理を行う。光照射は、カタライジング処理を
行ったのちに行なってもよい。
As the light source, a high pressure mercury lamp, a low pressure mercury lamp, an ultra high pressure mercury lamp, a xenon lamp, a carbon arc lamp, a fluorescent lamp, a halogen lamp and the like are suitable. In order to impart selective plating property to the A polymer molded product, a circuit or the like is masked on the molded product substrate with an aluminum foil or the like, or a negative resist is used to mask and then irradiate with light. After shining enough light,
Except for the mask, catalyzing treatment is performed by a conventional method, and chemical plating treatment is performed. The light irradiation may be performed after the catalizing treatment.

また、同様の目的から光照射の前に成形物表面を物理
的または化学的に粗面化処理、例えば機械的研摩または
有機溶媒(カルボン酸アミド類、エーテル類、ケトン類
等)、もしくは酸化剤(クロム類、過マンガン酸、硫酸
等)あるいはルイス酸(AlCl3、TiB、SbF5、SnCl4、BF3
等)の溶液を用いた処理をほどこすことによって表面を
粗面化しておくと、化学メッキ処理により形成される金
属層と成形物基板の密着性を高めることができる。この
ような粗面化処理を行っても、粗面化処理後に光照射す
るのであれば光照射の効果が失われることがない。
For the same purpose, the surface of the molded product is physically or chemically roughened before light irradiation, such as mechanical polishing or organic solvent (carboxylic acid amides, ethers, ketones, etc.), or an oxidizing agent. (Chromium, permanganate, sulfuric acid, etc.) or Lewis acid (AlCl 3 , TiB, SbF 5 , SnCl 4 , BF 3
If the surface is roughened by the treatment with a solution of (1), the adhesion between the metal layer formed by the chemical plating treatment and the molded product substrate can be improved. Even if such a surface-roughening treatment is performed, the effect of light irradiation is not lost if light-irradiation is performed after the surface-roughening treatment.

化学メッキ 化学メッキ工程のものは、プラスチック、特にPAS、
に対する慣用のあるいは使用可能なものと本質的には変
らない。
Chemical plating Chemical-plating processes include plastics, especially PAS,
It is essentially the same as the conventional or usable one for.

メッキの際の金属には制限はなく、銅、ニッケル、
銀、その他化学メッキ可能な金属がいずれも対象とな
る。本発明をアディティブ法によるプリント配線板の製
造に応用する場合は、化学銅メッキが特に有用である。
There are no restrictions on the metal used for plating, including copper, nickel,
The target is silver and other metals that can be chemically plated. Chemical copper plating is particularly useful when the present invention is applied to the production of printed wiring boards by the additive method.

化学メッキ操作の前にカタライジング処理を行なって
もよいことは前記したところでもあるし、また慣用の化
学メッキ工程の範疇に属することでもある。
The catalyzing treatment may be performed before the chemical plating operation, as described above, and it also belongs to the category of the conventional chemical plating process.

なお、化学メッキは周知の技術であって、具体的に
は、たとえば、メッキすべき金属の水溶性塩およびホル
マリンなどの還元剤を含み、さらに必要に応じて酒石酸
ナトリウムカリウム等の錯化剤、その他の補助成分とし
て促進剤、安定剤、改良剤等を含んだものの水溶液をメ
ッキ浴として、そこにメッキ対象物を浸漬する。
Chemical plating is a well-known technique. Specifically, for example, a water-soluble salt of a metal to be plated and a reducing agent such as formalin are included, and if necessary, a complexing agent such as sodium potassium tartrate, An aqueous solution containing an accelerator, a stabilizer, an improving agent and the like as other auxiliary components is used as a plating bath, and the object to be plated is immersed therein.

実 験 例 下記の諸例は、本発明を、具体的に説明するものであ
る。これらは例示であって、本発明は、以下の実施例に
限定されるものではない。
Experimental Examples The following examples specifically illustrate the present invention. These are examples, and the present invention is not limited to the following examples.

実施例1 市販ポリエチレンテレフタレート「RT580」(東洋紡
(株)製)を280℃でプレスし、0℃の水中にて急冷し
て、厚さ0.3mmの非晶シートを作成した。また、この非
晶シートの一部をさらに200℃で60分間保って結晶化さ
せて、結晶化シートを作成した。
Example 1 Commercially available polyethylene terephthalate “RT580” (manufactured by Toyobo Co., Ltd.) was pressed at 280 ° C. and rapidly cooled in water at 0 ° C. to prepare an amorphous sheet having a thickness of 0.3 mm. Further, a part of this amorphous sheet was further kept at 200 ° C. for 60 minutes for crystallization to prepare a crystallized sheet.

上記非晶シートおよび結晶化シートを、回路状にパタ
ーンを描いたアルミニウム製マスクでカバーし、高圧水
銀燈UM−452(ウシオ電機製)にて、光源までの距離20c
mで20時間照射した。このウシオ電機製の高圧水銀燈UM
−452の代表波長は、同社製100W高圧水銀燈UM−102のそ
れと同じである。
The amorphous sheet and the crystallized sheet were covered with an aluminum mask on which a circuit pattern was drawn, and a high pressure mercury lamp UM-452 (manufactured by Ushio Inc.)
Irradiated at m for 20 hours. This high pressure mercury lamp UM made by USHIO INC.
The representative wavelength of -452 is the same as that of the 100W high-pressure mercury lamp UM-102 manufactured by the same company.

その後、アルミニウム製マスクを取り、以下に示す条
件で化学銅メッキを行なった。
Then, the aluminum mask was removed, and chemical copper plating was performed under the following conditions.

キャタライジング:25℃×10分 後 水洗 化学銅メッキ: 0℃×20分 後 水洗 乾 燥 なお、用いた処理液の組成は、下記の通りであった。Catalyzing: 25 ° C. × 10 minutes after washing with water Chemical copper plating: 0 ° C. × 20 minutes after washing with water Drying The composition of the treatment liquid used was as follows.

キャタライジング液 (0.020g PdCl2+0.2gSnCl2+12N HCl 10ml)全量10
0ml 化学メッキ液 (1.56g CuSO4・5H2O+1.0g NaOH+5.0g NaKC4H4O6・4H2O+37%ホルマリン1.0ml/水溶液)全量1
00ml 得られた結果は、表−1に示す通りであった。非晶シ
ート、結晶化シートによらず、光未照射部分だけにメッ
キされるという、選択的化学メッキがなされていた。
Catalyzing liquid (0.020g PdCl 2 + 0.2g SnCl 2 + 12N HCl 10ml) Total 10
0ml chemical plating solution (1.56g CuSO 4 · 5H 2 O + 1.0g NaOH + 5.0g NaKC 4 H 4 O 6 · 4H 2 O + 37% formalin 1.0 ml / aqueous solution) the total amount 1
00 ml The obtained results are shown in Table 1. Selective chemical plating has been performed in which only the non-irradiated portion is plated regardless of the amorphous sheet or the crystallized sheet.

実施例2 実施例1で用いた試料は、光照射する前に、クロム酸
でエッチングあるいは、光照射後クロム酸でエッチング
した他は、実施例1と同じ方法によって、化学メッキを
行った。使用したクロム酸の組成は、0.2g Na2Cr2O7
2H2O+100ml95%H2SO4であり、エッチング条件は0℃×
5秒とした。
Example 2 The sample used in Example 1 was subjected to chemical plating by the same method as in Example 1 except that the sample was etched with chromic acid before being irradiated with light or etched with chromic acid after being irradiated with light. The composition of chromic acid used was 0.2 g Na 2 Cr 2 O 7
2H 2 O + 100 ml 95% H 2 SO 4 , etching conditions are 0 ° C ×
It was set to 5 seconds.

その結果、光照射する前にエッチング処理したもの
は、光照射部にメッキされない特性は得られたが、光照
射後にエッチング処理したものは光照射部にもメッキが
起った。
As a result, the one that was subjected to the etching treatment before the light irradiation had a property that the light irradiation portion was not plated, but the one that was subjected to the etching treatment after the light irradiation caused plating to occur in the light irradiation portion.

実施例3 市販ポリヘキサメチレンテレフタレート〔「ジュラネ
ックス3300」(ポリプラスチック社製)ガラスファイバ
ー30重量%含有〕を樹脂温度260℃、金型温度60℃、射
出圧800kg/cm2で射出成形して、厚さ3mm×10cm×12cmの
射出成形板を作成した。得られた射出成形板を、アセト
ンで洗浄後、クロム酸でエッチングし、実施例1と同じ
方法で光照射し、化学銅メッキを行った。
Example 3 A commercially available polyhexamethylene terephthalate [“Duranex 3300” (manufactured by Polyplastics Co.) containing 30% by weight of glass fiber] was injection molded at a resin temperature of 260 ° C., a mold temperature of 60 ° C. and an injection pressure of 800 kg / cm 2. An injection-molded plate having a thickness of 3 mm × 10 cm × 12 cm was prepared. The obtained injection-molded plate was washed with acetone, etched with chromic acid, irradiated with light in the same manner as in Example 1, and subjected to chemical copper plating.

光照射した部分にはメッキがなされず、光未照射部分
のみメッキがなされて、回路状のパターンが形成され
た。
The light-irradiated portion was not plated, and only the non-light-irradiated portion was plated to form a circuit-like pattern.

上記のように、ガラスファイバー入り成形物の場合に
も、選択的化学メッキは行なえる。
As described above, selective chemical plating can be performed even in the case of a molded product containing glass fiber.

実施例4 下記の高分子化合物〜にも実施例1と同様の選択
的な化学メッキが行なえることが同様の方法で確認する
ことができた。
Example 4 It could be confirmed by the same method that the following chemical compounds can be subjected to selective chemical plating similar to that in Example 1.

ポリサルホンP1700 日産化学製 ポリエーテルサルホン200P 三井東圧製 ポリエーテルテルケトン45G 三井東圧製 ポリエーテルイミド1000エンジニアリングプラスチッ
ク製 ポリエチレンテレフタレート「ルミラー」 東レ製 すなわち、先ず、高分子化合物を280℃でプレス
し、素早く0℃の水中にて急冷して、厚さ0.3mm非晶シ
ートを作成した。同様にして、高分子化合物〜の非
晶シートをプレス温度をそれぞれ280℃()、380℃
()、280℃()および310℃()に変更すること
によってつくった。また、この急冷非晶シートを、で
は280℃/20分、では200℃/20分加熱して結晶化させ
て、およびの結晶化シートを作成した。実施例1と
同様に非晶シートおよび結晶化シートの表面を回路状に
パターンを描いたネガ形のアルミニウム製マスクでカバ
ーし、高圧水銀燈(ウシオ電機製UM−102型)にて光源
までの距離20cmで10時間照射した。尚、実験に使用した
ウシオ電極製高圧水銀燈UM−102の代表波長は、302.2n
m、313.2nm、334.1nm、365.0nm、404.7nm、435.8nm、54
6.1nm、577.0nm等であった。
Polysulfone P1700 Nissan Chemical Polyethersulfone 200P Mitsui Toatsu Polyetherterketone 45G Mitsui Toatsu Polyetherimide 1000 Engineering Plastic Polyethylene terephthalate “Lumirror” Toray Then, it was rapidly cooled in water at 0 ° C. to prepare an amorphous sheet having a thickness of 0.3 mm. Similarly, press the amorphous sheet of polymer compound to 280 ℃ () and 380 ℃ respectively.
(), 280 ° C () and 310 ° C (). Also, this quenched amorphous sheet was heated at 280 ° C./20 minutes and at 200 ° C./20 minutes to crystallize, and a crystallized sheet of was prepared. As in Example 1, the surfaces of the amorphous sheet and the crystallized sheet were covered with a negative aluminum mask having a circuit-shaped pattern, and the distance to the light source was increased by a high-pressure mercury lamp (USHIO UM-102 type). Irradiation was carried out at 20 cm for 10 hours. The typical wavelength of the Ushio electrode high pressure mercury lamp UM-102 used in the experiment was 302.2n.
m, 313.2nm, 334.1nm, 365.0nm, 404.7nm, 435.8nm, 54
It was 6.1 nm, 577.0 nm, etc.

その後、アルミニウム製マスクを除き、実施例1と同
様の方法で化学メッキを行なった。
Then, chemical plating was performed in the same manner as in Example 1 except for the aluminum mask.

いずれの高分子化合物成形物においても、非晶シー
ト、結晶化シートに関係なく紫外線未照射部分だけにメ
ッキされていた。
In all of the polymer compound molded articles, plating was performed only on the portions not irradiated with ultraviolet light, regardless of the amorphous sheet or the crystallized sheet.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭51−57643(JP,A) 特開 昭59−136472(JP,A) 特公 昭59−16436(JP,B2) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-51-57643 (JP, A) JP-A-59-136472 (JP, A) JP-B-59-16436 (JP, B2)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】分子中に酸素もしくは硫黄原子を含んだ高
分子化合物(ポリアリーレンサルファイドは除く)もし
くは同組成物からなる樹脂成形物に対して化学メッキを
行なう際に、あらかじめメッキ不要部分に0.1〜600nmの
波長の光を照射してメッキ不活性化領域を前記成形物の
当該樹脂の表面に直接設けたのち、化学メッキを行なう
ことを特徴とする、選択的化学メッキ法。
1. When chemical plating is applied to a polymer compound containing an oxygen or sulfur atom in the molecule (excluding polyarylene sulfide) or a resin molded product made of the same composition, 0.1 is preliminarily applied to a portion not requiring plating. A selective chemical plating method, which comprises irradiating light having a wavelength of ˜600 nm to directly provide a plating inactivating region on the surface of the resin of the molded product, and then performing chemical plating.
JP61283399A 1986-11-28 1986-11-28 Selective chemical plating method Expired - Lifetime JP2559717B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61283399A JP2559717B2 (en) 1986-11-28 1986-11-28 Selective chemical plating method

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Application Number Priority Date Filing Date Title
JP61283399A JP2559717B2 (en) 1986-11-28 1986-11-28 Selective chemical plating method

Publications (2)

Publication Number Publication Date
JPS63137176A JPS63137176A (en) 1988-06-09
JP2559717B2 true JP2559717B2 (en) 1996-12-04

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ID=17665016

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Country Link
JP (1) JP2559717B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3399434B2 (en) * 2001-03-02 2003-04-21 オムロン株式会社 Method for forming plating of polymer molding material, circuit forming part, and method for manufacturing this circuit forming part
JP2006057166A (en) * 2004-08-23 2006-03-02 Toyota Motor Corp Method for forming wiring by plating

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3928670A (en) * 1974-09-23 1975-12-23 Amp Inc Selective plating on non-metallic surfaces
JPS5916436A (en) * 1982-07-19 1984-01-27 Sony Corp Address signal transmission system
JPS59136472A (en) * 1983-01-27 1984-08-06 Mitsubishi Rayon Co Ltd Partial coating method for plastics

Also Published As

Publication number Publication date
JPS63137176A (en) 1988-06-09

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