JP2543016B2 - Method for producing 1,3-diketone-based organometallic complex - Google Patents

Method for producing 1,3-diketone-based organometallic complex

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Publication number
JP2543016B2
JP2543016B2 JP3164018A JP16401891A JP2543016B2 JP 2543016 B2 JP2543016 B2 JP 2543016B2 JP 3164018 A JP3164018 A JP 3164018A JP 16401891 A JP16401891 A JP 16401891A JP 2543016 B2 JP2543016 B2 JP 2543016B2
Authority
JP
Japan
Prior art keywords
diketone
organometallic complex
producing
metal
based organometallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3164018A
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Japanese (ja)
Other versions
JPH059608A (en
Inventor
真一郎 赤瀬
雄三 田▲崎▼
真由美 進藤
結理花 井野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dowa Holdings Co Ltd
Original Assignee
Dowa Mining Co Ltd
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Publication date
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Priority to JP3164018A priority Critical patent/JP2543016B2/en
Publication of JPH059608A publication Critical patent/JPH059608A/en
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Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、超電導材料、光デバイ
ス用ドーパント材料として有用な1,3−ジケトン系有
機金属錯体の製造法に関する。
TECHNICAL FIELD The present invention relates to a method for producing a 1,3-diketone-based organometallic complex useful as a superconducting material and a dopant material for optical devices.

【0002】[0002]

【従来の技術】従来、単結晶薄膜や多結晶薄膜の形成方
法として、ドライプロセスとウエットプロセスといった
2種類の方法が用いられてきたが、ウエットプロセスと
比べてドライプロセスによって形成された薄膜のほうが
品質面で優れるため、ドライプロセスが多用さているの
が現状である。
2. Description of the Related Art Conventionally, as a method for forming a single crystal thin film or a polycrystalline thin film, two kinds of methods such as a dry process and a wet process have been used, but a thin film formed by a dry process is more preferable than a wet process. At present, the dry process is frequently used because of its excellent quality.

【0003】ドライプロセスには、真空蒸着法、イオン
プレーティング法およびスパッタリング法等の物理的成
膜法と、化学的気相蒸着法(CVD法)等の化学的成膜
法とがある。中でもCVD法は、成膜速度の制御が容易
である上、成膜を高真空下で行う必要がなく、しかも高
速成膜が可能であることなどから量産向きであるため広
く用いられている。このようなCVD法において、有機
金属錯体の蒸気を分解させて金属薄膜を形成する場合に
は、熱CVD法、光CVD法またはプラズマCVD法が
採用される。また、これらの方法では、有機部分(配位
子)がアセチルアセトン、ジピバロイルメタン、ヘキサ
フルオロアセチルアセトンまたはジイソブチリルメタン
等からなる1,3−ジケトン系有機金属錯体が一般的に
使用されている。
The dry process includes a physical film forming method such as a vacuum vapor deposition method, an ion plating method and a sputtering method, and a chemical film forming method such as a chemical vapor deposition method (CVD method). Among them, the CVD method is widely used because it is suitable for mass production because it is easy to control the deposition rate, does not need to be deposited in a high vacuum, and is capable of high-speed deposition. In such a CVD method, when the metal thin film is formed by decomposing the vapor of the organometallic complex, a thermal CVD method, a photo CVD method or a plasma CVD method is adopted. Further, in these methods, a 1,3-diketone-based organometallic complex whose organic moiety (ligand) is acetylacetone, dipivaloylmethane, hexafluoroacetylacetone, diisobutyrylmethane or the like is generally used. There is.

【0004】上記のような1,3−ジケトン系有機金属
錯体の製造法としては、金属塩と1,3−ジケトン化合
物を50%エタノール水溶液中で反応させた後、濃アンモ
ニア水を添加して1,3−ジケトン系の有機金属錯体を
析出させるという方法が知られている。また、このよう
な製造法によって得られる1,3−ジケトン系有機金属
錯体は水和物の形であるため、再結晶法、昇華法または
蒸留法により、上記得られた金属錯体を繰り返し再結
晶、昇華または蒸留して精製し、金属錯体の純度の向上
を図っていた。
As a method for producing the 1,3-diketone-based organometallic complex as described above, a metal salt is reacted with a 1,3-diketone compound in a 50% aqueous ethanol solution, and then concentrated aqueous ammonia is added. A method of depositing a 1,3-diketone-based organometallic complex is known. In addition, since the 1,3-diketone-based organometallic complex obtained by such a production method is in the form of a hydrate, the obtained metal complex is repeatedly recrystallized by a recrystallization method, a sublimation method or a distillation method. The metal complex was refined by sublimation or distillation to improve the purity of the metal complex.

【0005】しかしながら、上記のような方法によって
有機金属錯体から金属薄膜を形成した場合、有機金属錯
体の純度不足から、得られる成膜材料中に金属不純物が
取り込まれ、薄膜の電気的性質や化学的性質を低下させ
るという問題点があった。そのため、不純物、主に水和
物の除去を徹底させた高純度な1,3−ジケトン系有機
金属錯体の製造法が求められていた。
However, when a metal thin film is formed from an organometallic complex by the above-mentioned method, metal impurities are incorporated into the obtained film-forming material due to insufficient purity of the organometallic complex, and the electrical properties and chemistry of the thin film. However, there is a problem that the physical property is deteriorated. Therefore, a method for producing a highly pure 1,3-diketone-based organometallic complex in which impurities, mainly hydrates are thoroughly removed has been demanded.

【0006】[0006]

【発明が解決しようとする課題】本発明は、上述従来の
技術の問題点を解決し、簡便な操作で高純度な有機金属
錯体を、容易に大量生産することができる1,3−ジケ
トン系有機金属錯体の製造法を提供することを目的とし
ている。
DISCLOSURE OF THE INVENTION The present invention solves the problems of the above-mentioned conventional techniques, and makes it possible to easily mass-produce a high-purity organometallic complex with a simple operation in a 1,3-diketone system. It is intended to provide a method for producing an organometallic complex.

【0007】[0007]

【課題を解決するための手段】本発明者等は、上記課題
を解決するため鋭意研究した結果、所定の金属を1,3
−ジケトンと反応させてその有機錯体を形成させる際
に、不純物金属の水和物が形成されて前記錯体に混入す
る環境をつくる溶媒の不存在下またはそのような傾向の
ない無極性溶媒中において、金属単体と1,3−ジケト
ンとを反応させることにより、不純物たる水和物の生成
を抑制できることを見い出し、本発明を達成することが
できた。
Means for Solving the Problems The inventors of the present invention have conducted intensive studies to solve the above problems, and as a result, have determined that a predetermined metal is 1,3
In the absence of a solvent that creates an environment in which a hydrate of the impurity metal is formed and reacts with the diketone to form its organic complex, or in a non-polar solvent that does not tend to such It was found that the reaction of the metal simple substance with the 1,3-diketone can suppress the formation of a hydrate as an impurity, and thus the present invention can be achieved.

【0008】すなわち、本発明は、溶媒の不存在下また
は無極性溶媒中において、金属単体と1,3−ジケトン
とを反応させて1,3−ジケトン系の有機金属錯体の粗
結晶を生成させ、この粗結晶を再結晶法などにより精製
して高純度体を得ることを特徴とする1,3−ジケトン
系有機金属錯体の製造法を提供するものである。
That is, according to the present invention, a crude metal of a 1,3-diketone-based organometallic complex is produced by reacting a metal simple substance with a 1,3-diketone in the absence of a solvent or in a nonpolar solvent. The present invention provides a method for producing a 1,3-diketone-based organometallic complex, characterized in that the crude crystal is purified by a recrystallization method or the like to obtain a highly purified product.

【0009】また、本発明においては、1,3−ジケト
ンと反応させる金属単体としてバリウム、マグネシウ
ム、カルシウムおよびストロンチウムからなる群より選
ばれるIIA族金属を用いるとより好都合であり、無極性
溶媒としてはn−ヘキサン、n−ペンタン、2−メチル
ヘキサンもしくはオクタンなど炭素数5〜8の脂肪族炭
化水素、またはベンゼン、トルエンもしくはキシレンな
どベンゼン環を有する炭素数6〜9の芳香属炭化水素を
用いると特に好ましい。
Further, in the present invention, it is more convenient to use a Group IIA metal selected from the group consisting of barium, magnesium, calcium and strontium as a simple metal to be reacted with 1,3-diketone, and as a non-polar solvent. When an aliphatic hydrocarbon having 5 to 8 carbon atoms such as n-hexane, n-pentane, 2-methylhexane or octane, or an aromatic hydrocarbon having 6 to 9 carbon atoms having a benzene ring such as benzene, toluene or xylene is used. Particularly preferred.

【0010】さらに、本発明においては、1,3−ジケ
トンとしてアセチルアセトン、ジピバロイルメタン、ヘ
キサフルオロアセチルアセトンまたはジイソブチリルメ
タンを用いるとより好適である。
Further, in the present invention, it is more preferable to use acetylacetone, dipivaloylmethane, hexafluoroacetylacetone or diisobutyrylmethane as the 1,3-diketone.

【0011】[0011]

【作用】本発明を詳細に説明すると次の通りである。ま
ず、不活性ガス雰囲気の下、金属単体と1,3−ジケト
ン、特にアセチルアセトン、ジピバロイルメタン、ヘキ
サフルオロアセチルアセトンまたはジイソブチリルメタ
ンとを溶媒の不存在下あるいは無極性溶媒中において常
圧で20〜80℃に加温し、両者を反応させて有機金属錯体
溶液を作製する。次いで該反応によって溶液中の金属単
体が完全に消失したのを確認した後、この有機金属錯体
溶液中に残存した未反応1,3−ジケトンおよび無極性
溶媒を除去し、有機金属錯体の粗結晶を得る。
The present invention will be described in detail as follows. First, under an inert gas atmosphere, a simple substance of metal and 1,3-diketone, especially acetylacetone, dipivaloylmethane, hexafluoroacetylacetone or diisobutyrylmethane are added under normal pressure in the absence of a solvent or in a nonpolar solvent. The mixture is heated to 20 to 80 ℃ and reacted to prepare an organometallic complex solution. Next, after confirming that the metal simple substance in the solution completely disappeared by the reaction, unreacted 1,3-diketone and nonpolar solvent remaining in the organometallic complex solution were removed to obtain a crude crystal of the organometallic complex. To get

【0012】次に、得られた有機金属錯体の粗結晶を無
極性溶媒、特にn−ペンタン、n−ヘキサン、n−ヘプ
タン、2−メチルヘキサンまたはオクタンなど炭素数が
5〜8の脂肪族炭化水素か、あるいはベンゼン、トルエ
ンまたはキシレンなどベンゼン環を有する炭素数が6〜
9の芳香族炭化水素中で加熱溶解または部分溶解させ
る。次いで、その溶液を室温で放置して再結晶物または
析出物を得、得られた再結晶物または析出物を減圧加熱
乾燥して高純度の1,3−ジケトン系の有機金属錯体を
得る。なお、上記再結晶または析出工程は、2回繰り返
せば十分である。
Next, the obtained crude crystals of the organometallic complex are subjected to aliphatic carbonization such as nonpolar solvent, particularly n-pentane, n-hexane, n-heptane, 2-methylhexane or octane, which has 5 to 8 carbon atoms. Hydrogen or benzene, toluene, xylene, or other benzene ring having 6 to 6 carbon atoms
Heat-dissolve or partially-dissolve in 9 aromatic hydrocarbons. Next, the solution is left at room temperature to obtain a recrystallized product or a precipitate, and the obtained recrystallized product or the precipitate is dried under reduced pressure to obtain a highly pure 1,3-diketone-based organometallic complex. Note that it is sufficient to repeat the above recrystallization or precipitation step twice.

【0013】上述のような内容の本発明は、金属単体と
1,3−ジケトンとを溶媒の不存在下あるいは無極性溶
媒中で直接反応させて、有機金属錯体を合成させること
に最大の特徴があり、このように溶媒の不存在下あるい
は無極性溶媒中で両者を直接反応させることにより、不
純物たる水和物の生成が抑制されて有機金属錯体の高純
度化が図られる。
The present invention having the above-mentioned contents has the greatest feature in synthesizing an organometallic complex by directly reacting a metal simple substance with a 1,3-diketone in the absence of a solvent or in a nonpolar solvent. Thus, by directly reacting both in the absence of a solvent or in a non-polar solvent, the production of hydrate as an impurity is suppressed and the organometallic complex is highly purified.

【0014】以下、実施例により本発明をさらに詳細に
説明する。しかし本発明の範囲は、以下の実施例により
制限されるものではない。
Hereinafter, the present invention will be described in more detail with reference to examples. However, the scope of the present invention is not limited by the following examples.

【0015】[0015]

【実施例】本発明の1,3−ジケトン系有機金属錯体の
製造法の一実施例として、ビスジピバロイルメタナトバ
リウムの製造法を以下に示す。
EXAMPLES As an example of the method for producing the 1,3-diketone-based organometallic complex of the present invention, the method for producing bisdipivaloylmethanatobarium will be described below.

【0016】まず、金属バリウム 4.1g(30mmol)を 2
00ml反応フラスコに入れ、フラスコ内をアルゴン置換し
た後n−ヘキサン20mlを加え、続いてジピバロイルメタ
ン22g(120 mmol)を加えて40℃で一晩攪拌し、金属バ
リウムと反応させた。金属バリウムがすべて反応した
後、常温でn−ヘキサンを減圧留去(1〜2 mmHg)し、さ
らにこの溶液を 100℃に加熱して溶液中に残存した未反
応のジピバロイルメタンを減圧留去した。n−ヘキサン
およびジピバロイルメタンを減圧留去した後、析出した
ビスジピバロイルメタナトバリウム粗結晶を、既知の再
結晶法によりn−ヘキサンで再結晶精製し、水和物の生
成が抑制された高純度なビスジピバロイルメタナトバリ
ウムを 7.8g(収率52%)得た。なお、上記再結晶精製
の際、液体を乾固させて再結晶を行えば、さらに多くの
ビスジピバロイルメタナトバリウムを回収することがで
きる。
First, 4.1 g (30 mmol) of metal barium was added to 2
The mixture was placed in a 00 ml reaction flask, and the inside of the flask was replaced with argon, 20 ml of n-hexane was added, 22 g (120 mmol) of dipivaloylmethane was subsequently added, and the mixture was stirred at 40 ° C. overnight to react with metal barium. After all the metal barium has reacted, n-hexane is distilled off under reduced pressure (1-2 mmHg) at room temperature, and this solution is heated to 100 ° C to reduce the unreacted dipivaloylmethane remaining in the solution under reduced pressure. Distilled off. After distilling off n-hexane and dipivaloylmethane under reduced pressure, the precipitated bisdipivaloylmethanatobarium crude crystal was recrystallized and purified by n-hexane according to a known recrystallization method to produce a hydrate. 7.8 g (yield 52%) of suppressed and highly pure bisdipivaloylmethanatobarium was obtained. In the recrystallization purification, a larger amount of bisdipivaloylmethanatobarium can be recovered by allowing the liquid to dry and performing recrystallization.

【0017】このようにして得られたビスジピバロイル
メタナトバリウムについて熱重量測定(TG)と示差熱
分析(DTA)を行い、それらの結果を図1に示した。
なお、測定は連続的に 600℃まで昇温し、その過程にお
いて熱重量測定と示差熱分析を同時に行った。また、T
Gデータから測定試料中の不純物量を推定するため、T
Gの微分カーブ(DTG)を取り、図1中に併せて示し
た。
The bisdipivaloylmethanatobarium thus obtained was subjected to thermogravimetric measurement (TG) and differential thermal analysis (DTA), and the results are shown in FIG.
The measurement was conducted by continuously raising the temperature to 600 ° C., and thermogravimetric measurement and differential thermal analysis were simultaneously performed in the process. Also, T
In order to estimate the amount of impurities in the measured sample from the G data, T
A differential curve (DTG) of G is taken and also shown in FIG.

【0018】[0018]

【比較例】本発明の比較例として、従来のビスジピバロ
イルメタナトバリウムの製造法を以下に示す。
Comparative Example As a comparative example of the present invention, a conventional method for producing bisdipivaloylmethanatobarium is shown below.

【0019】まず、金属バリウム 4.1g(30mmol)を 3
00ml反応フラスコに入れ、フラスコ内をアルゴン置換し
た後、エタノール 100mlを加えて金属バリウムを反応さ
せてバリウムエトキシドのエタノール溶液とした。次い
で、該溶液にジピバロイルメタン11g(60mmol)を加え
た後、常温でエタノールを減圧留去(1〜2 mmHg)し、さ
らにこの溶液を 100℃に加熱して溶液中に残存した未反
応のジピバロイルメタンを減圧留去し、ビスジピバロイ
ルメタナトバリウムを13.1g(収率87%)得た。その
後、得られたビスジピバロイルメタナトバリウム中にか
なりの水和物が生成していたため、n−ヘキサンで繰り
返し再結晶精製を行い精製品を得たが、再結晶収率は 5
%以下と極めて低かった。
First, 3 g of 4.1 g (30 mmol) of metal barium was added.
The mixture was placed in a 00 ml reaction flask, the inside of the flask was replaced with argon, and 100 ml of ethanol was added to react metal barium to obtain an ethanol solution of barium ethoxide. Next, 11 g (60 mmol) of dipivaloylmethane was added to the solution, ethanol was distilled off under reduced pressure (1-2 mmHg) at room temperature, and the solution was heated to 100 ° C. The dipivaloylmethane in the reaction was distilled off under reduced pressure to obtain 13.1 g (yield 87%) of bisdipivaloylmethanatobarium. After that, since a considerable amount of hydrate was formed in the obtained bisdipivaloylmethanatobarium, a refined product was obtained by repeatedly performing recrystallization purification with n-hexane, but the recrystallization yield was 5
% Or less, which was extremely low.

【0020】上記精製前のビスジピバロイルメタナトバ
リウムについてTGおよびDTA、すなわち熱重量測定
と示差熱分析を行い、その結果を図2に示した。なお、
測定は連続的に 600℃まで昇温し、その過程において熱
重量測定と示差熱分析を同時に行った。また、TGデー
タから測定試料中の不純物量を推定するため、TGの微
分カーブ(DTG)を取り、図2中に併せて示した。
TG and DTA, that is, thermogravimetric measurement and differential thermal analysis were performed on the bisdipivaloylmethanatobarium before purification, and the results are shown in FIG. In addition,
The measurement was performed by continuously raising the temperature to 600 ° C, and in the process, thermogravimetric measurement and differential thermal analysis were performed simultaneously. Further, in order to estimate the amount of impurities in the measurement sample from the TG data, a differential curve (DTG) of TG was taken and also shown in FIG.

【0021】本発明法(実施例)および従来法(比較
例)によってそれぞれ作製されたビスジピバロイルメタ
ナトバリウムについてのTGおよびDTAの結果を比較
すると、図1および図2からも分かるように、本発明法
によって作製されたビスジピバロイルメタナトバリウム
は、低温側(200℃以下)でのTG減量(不純物量)が 2
%以内(1.6 %)に抑えられているのに対し、従来法に
よって作製されたビスジピバロイルメタナトバリウムの
TG減量は、 4.6%と 2%を大きく越えており、これを
2%以下に減少させるためには、かなりの回数精製を繰
り返さなければならず非常に効率が悪い。また、本発明
法により作製されたビスジピバロイルメタナトバリウム
の全TG減量(ビスジピバロイルメタナトバリウム昇華
量)は、90%以上(94.5%)と大きい値を示したのに対
し、従来法によって作製されたものは87.5%であった。
さらに、従来法により作製されたビスジピバロイルメタ
ナトバリウムのDTGは、メインピークが2つに割れて
おり、不純物の混入を示唆している。
Comparison of the TG and DTA results for bisdipivaloylmethanatobarium produced by the method of the present invention (example) and the conventional method (comparative example), as can be seen from FIG. 1 and FIG. The bisdipivaloylmethanatobarium produced by the method of the present invention has a TG reduction amount (impurity amount) on the low temperature side (200 ° C. or lower).
The TG weight loss of bisdipivaloylmethanatobarium produced by the conventional method is 4.6%, which is much higher than 2%.
In order to reduce it to 2% or less, the purification must be repeated a considerable number of times, which is very inefficient. Further, the total TG loss of bisdipivaloylmethanatobarium produced by the method of the present invention (bisdipivaloylmethanatobarium sublimation amount) showed a large value of 90% or more (94.5%). 87.5% was produced by the conventional method.
Further, in the DTG of bisdipivaloylmethanatobarium produced by the conventional method, the main peak is split into two, which suggests the inclusion of impurities.

【0022】[0022]

【発明の効果】本発明の開発により、水和物の生成が抑
制された高純度な1,3−ジケトン系有機金属錯体を製
造することができるようになった。また、本発明は、従
来法と比較して再結晶工程数あるいは析出工程数が著し
く減少したため、簡便かつ効率良く大量生産することが
できるようになった。
As a result of the development of the present invention, it has become possible to produce a highly pure 1,3-diketone-based organometallic complex in which the formation of hydrates is suppressed. Further, according to the present invention, since the number of recrystallization steps or the number of precipitation steps is remarkably reduced as compared with the conventional method, it has become possible to mass-produce easily and efficiently.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明法によって製造された1,3−ジケトン
系有機金属錯体についてのTGおよびDTAの結果を示
したグラフである。
FIG. 1 is a graph showing the results of TG and DTA for a 1,3-diketone-based organometallic complex produced by the method of the present invention.

【図2】従来法によって製造された1,3−ジケトン系
有機金属錯体についてのTGおよびDTAの結果を示し
たグラフである。
FIG. 2 is a graph showing the results of TG and DTA for a 1,3-diketone-based organometallic complex produced by a conventional method.

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 溶媒の不存在下または無極性溶媒中にお
いて、金属単体と1,3−ジケトンとを反応させて1,
3−ジケトン系の有機金属錯体の粗結晶を生成させ、こ
の粗結晶を精製して高純度体を得ることを特徴とする
1,3−ジケトン系有機金属錯体の製造法。
1. A simple metal is reacted with a 1,3-diketone in the absence of a solvent or in a non-polar solvent to give 1,
A method for producing a 1,3-diketone-based organometallic complex, which comprises producing a crude crystal of a 3-diketone-based organometallic complex and purifying the crude crystal to obtain a highly purified product.
【請求項2】 上記金属単体がバリウム、マグネシウ
ム、カルシウムおよびストロンチウムからなる群より選
ばれるIIA族金属である請求項1記載の1,3−ジケト
ン系有機金属錯体の製造法。
2. The method for producing a 1,3-diketone-based organometallic complex according to claim 1, wherein the elemental metal is a Group IIA metal selected from the group consisting of barium, magnesium, calcium and strontium.
【請求項3】 上記無極性溶媒が炭素数5〜8の脂肪族
炭化水素、またはベンゼン環を有する炭素数6〜9の芳
香属炭化水素である請求項1記載の1,3−ジケトン系
有機金属錯体の製造法。
3. The 1,3-diketone organic compound according to claim 1, wherein the nonpolar solvent is an aliphatic hydrocarbon having 5 to 8 carbon atoms or an aromatic hydrocarbon having 6 to 9 carbon atoms and having a benzene ring. Method for producing metal complex.
【請求項4】 上記1,3−ジケトンがアセチルアセト
ン、ジピバロイルメタン、ヘキサフルオロアセチルアセ
トンまたはジイソブチリルメタンである請求項1記載の
1,3−ジケトン系有機金属錯体の製造法。
4. The method for producing a 1,3-diketone-based organometallic complex according to claim 1, wherein the 1,3-diketone is acetylacetone, dipivaloylmethane, hexafluoroacetylacetone or diisobutyrylmethane.
JP3164018A 1991-06-07 1991-06-07 Method for producing 1,3-diketone-based organometallic complex Expired - Fee Related JP2543016B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3164018A JP2543016B2 (en) 1991-06-07 1991-06-07 Method for producing 1,3-diketone-based organometallic complex

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3164018A JP2543016B2 (en) 1991-06-07 1991-06-07 Method for producing 1,3-diketone-based organometallic complex

Publications (2)

Publication Number Publication Date
JPH059608A JPH059608A (en) 1993-01-19
JP2543016B2 true JP2543016B2 (en) 1996-10-16

Family

ID=15785226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3164018A Expired - Fee Related JP2543016B2 (en) 1991-06-07 1991-06-07 Method for producing 1,3-diketone-based organometallic complex

Country Status (1)

Country Link
JP (1) JP2543016B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000026362A (en) * 1998-07-10 2000-01-25 Daicel Chem Ind Ltd Production of alkaline-earth metal salt of beta-diketo compound
CN114380676A (en) * 2021-12-28 2022-04-22 东部超导科技(苏州)有限公司 Multi-element rare earth eutectic high-temperature superconducting raw material and preparation method and application thereof

Also Published As

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