JP2542801Y2 - Chip variable resistor - Google Patents
Chip variable resistorInfo
- Publication number
- JP2542801Y2 JP2542801Y2 JP1989125931U JP12593189U JP2542801Y2 JP 2542801 Y2 JP2542801 Y2 JP 2542801Y2 JP 1989125931 U JP1989125931 U JP 1989125931U JP 12593189 U JP12593189 U JP 12593189U JP 2542801 Y2 JP2542801 Y2 JP 2542801Y2
- Authority
- JP
- Japan
- Prior art keywords
- arc
- resistive film
- slider
- contact area
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
【考案の詳細な説明】 〔産業上の利用分野〕 本考案は、抵抗値を可変調節できるようにした小型の
チップ可変抵抗器の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an improvement of a small chip variable resistor in which a resistance value can be variably adjusted.
従来におけるこの種の可変抵抗器においては、例え
ば、実開昭58−44805号公報等に記載されているよう
に、絶縁基板の上面に抵抗膜を、少なくとも略半円の円
弧状に形成し、この円弧状抵抗膜に対して、前記絶縁基
板に回転自在に軸支した摺動子を接触することにより、
前記円弧状抵抗膜の一端と前記摺動子との間における抵
抗値、及び前記円弧状抵抗膜の他端と前記摺動子との間
における抵抗値を可変調節するように構成している。In this type of conventional variable resistor, for example, as described in Japanese Utility Model Application Laid-Open No. 58-44805, a resistive film is formed on the upper surface of an insulating substrate in at least a substantially semicircular arc shape, By bringing a slider rotatably supported on the insulating substrate into contact with the arc-shaped resistive film,
The resistance value between one end of the arc-shaped resistance film and the slider and the resistance value between the other end of the arc-shaped resistance film and the slider are variably adjusted.
しかし、前記円弧条の抵抗膜は、絶縁基板の上面に、
絶縁粒子、導電粒子及びバインダーの三者を適宜の比率
で混合した導電ペーストを、適宜幅寸法で、且つ適宜厚
さの厚膜状に塗着したのち焼成することによって形成す
るものであるが、前記絶縁粒子、導電粒子及びバインダ
ーの三者の混合比率、及び前記導電ペーストを塗着する
ときにおける幅寸法並びに厚さ寸法には、各々バラ付き
が存在するものであるから、前記円弧状抵抗膜の両端間
における全抵抗値は、前記混合比率及び幅寸法並びに厚
さ寸法のバラ付きによって、可成り変動することにな
る。However, the arc-shaped resistive film is formed on the upper surface of the insulating substrate.
Insulating particles, conductive particles and a conductive paste obtained by mixing the three of the binder in an appropriate ratio, in an appropriate width dimension, and is formed by applying a thick film of an appropriate thickness and then firing, Since the insulating particles, the mixing ratio of the three of the conductive particles and the binder, and the width dimension and the thickness dimension when applying the conductive paste each have a variation, the arc-shaped resistance film The total resistance value between the two ends varies considerably depending on the mixing ratio, the width dimension and the thickness dimension.
従って、従来は、前記円弧状抵抗膜の塗着形成したあ
とにおいて、当該円弧状抵抗膜の両端間における全抵抗
値を測定し、この測定した全抵抗値が、予め要求される
全抵抗値から大きく外れているものを除外するようにし
ているから、チップ可変抵抗器を製造する場合における
製品の歩留り率が低いと云う問題があった。Therefore, conventionally, after forming the arc-shaped resistance film by coating, the total resistance value between both ends of the arc-shaped resistance film is measured, and the measured total resistance value is calculated from the total resistance value required in advance. Since a large deviation is excluded, there is a problem that the product yield rate is low when manufacturing a chip variable resistor.
本考案、前記円弧状抵抗膜の両端間における全抵抗値
を、当該円弧状抵抗膜の塗着形成後において調節できる
ようにして、前記の問題、つまり、製品の歩留り率が低
いことを解消することを目的とするものである。The present invention makes it possible to adjust the total resistance value between both ends of the arc-shaped resistive film after the arc-shaped resistive film is applied, thereby solving the above-mentioned problem, that is, the low product yield rate. The purpose is to do so.
この目的を達成するため本考案は、 「絶縁基板の上面に、当該上面に少なくとも略半円の円
弧状に形成した抵抗膜に対して摺動自在に接触する摺動
子を回転自在に軸支して成るチップ可変抵抗器におい
て、前記円弧状抵抗膜の幅寸法を、当該抵抗値のうち前
記摺動子に対する接触領域より内周側の部位に前記摺動
子が接触しない非接触領域を設けるように広幅に構成し
て、前記非接触領域に、その内周縁から外側に向って放
射状に延びるトリミング溝部を、抵抗膜の円周方向に沿
って適宜間隔で複数条設ける。」 と言う構成にした。In order to achieve this object, the present invention provides a method comprising: "a rotatably supported slider on an upper surface of an insulating substrate, which slidably contacts a resistive film formed at least in a substantially semicircular arc on the upper surface. In the chip variable resistor, the width dimension of the arc-shaped resistive film is set to a non-contact area where the slider does not come into contact with a part of the resistance value on the inner peripheral side of the contact area with the slider. And a plurality of trimming grooves extending radially outward from the inner peripheral edge of the non-contact area at appropriate intervals along the circumferential direction of the resistive film. " did.
このように、円弧状抵抗膜の幅寸法を、当該抵抗膜の
うち摺動子に対する接触領域より内周側よりの部位に摺
動子が接触しない非接触領域を設けるよう広幅に構成し
て、前記非接触領域に、その内周縁から外側に向って放
射状に延びるトリミング溝部を、抵抗膜の円周方向に沿
って適宜間隔で複数条設ける構成にすると、前記円弧状
抵抗膜の両端間における全抵抗値を、当該円弧状抵抗膜
の塗着形成後において、複数条のトリミング溝部によっ
て調節することができる。In this way, the width dimension of the arc-shaped resistive film is configured to be wide so as to provide a non-contact area where the slider does not come into contact with a portion of the resistive film from the inner peripheral side to the contact area with the slider, When the non-contact area is provided with a plurality of trimming grooves extending radially outward from the inner peripheral edge thereof at appropriate intervals along the circumferential direction of the resistance film, the entire length between both ends of the arc-shaped resistance film is reduced. The resistance value can be adjusted by a plurality of trimming grooves after the arc-shaped resistance film is applied.
ところで、円弧状抵抗膜に電流を印加した場合、電流
は、当該円弧状抵抗膜のうち円周長さの長い外周側の部
分（この部分における抵抗値は大きい）よりも、円周長
さの短い内周側の部分（この部分における抵抗値は小さ
い）の方に多く流れるものである。By the way, when a current is applied to the arc-shaped resistive film, the current has a larger circumferential length than a portion of the arc-shaped resistive film on the outer peripheral side having a longer circumferential length (the resistance value in this portion is larger). A larger amount flows toward the shorter inner peripheral portion (the resistance value at this portion is small).
そこで、前記したように、円弧状抵抗膜の幅寸法を、
当該抵抗膜のうち摺動子に対する接触領域より内周側よ
りの部位に摺動子が接触しない非接触領域を設けるよう
に広幅に構成して、前記非接触領域に、その内周縁から
外側に向って放射状に延びるトリミング溝部を、抵抗膜
の円周方向に沿って適宜間隔で複数条設けることによ
り、前記円弧状抵抗膜の両端における全抵抗値は、前記
抵抗値調節用のトリミング溝を、例えば、特開昭57−16
0102号公報に記載されているように、円弧状抵抗膜にお
ける外周側に設けた場合よりも大きく変化することにな
るから、全抵抗値を調節できる範囲を拡大することがで
きるのである。Therefore, as described above, the width dimension of the arc-shaped resistive film is
The resistive film is configured to have a wide width so as to provide a non-contact area where the slider does not come into contact with a part of the resistive film that is closer to the inner side than the contact area with the slider. By providing a plurality of trimming grooves radially extending toward the resistive film at appropriate intervals along the circumferential direction of the resistive film, the total resistance value at both ends of the arc-shaped resistive film is the trimming groove for adjusting the resistance value, For example, JP-A-57-16
As described in Japanese Patent Application Laid-Open No. H10-102, since it changes more greatly than when it is provided on the outer peripheral side of the arc-shaped resistive film, the range in which the total resistance can be adjusted can be expanded.
また、抵抗値調節用のトリミング溝部を設ける非接触
領域を、前記のように、円弧状抵抗膜の内周よりの部位
に形成したことにより、この抵抗値調節用のトリミング
溝部を設ける非接触領域を、例えば、特開昭57−160102
号公報に記載されているように、円弧状抵抗膜における
外周よりに設けた場合よりも、円弧状抵抗膜の直径を小
さくすることができるから、全抵抗値を調節できるよう
に構成する場合におけるチップ可変抵抗器の大型化を回
避することができるのである。Further, since the non-contact area in which the trimming groove for adjusting the resistance value is formed in the portion from the inner periphery of the arc-shaped resistance film as described above, the non-contact area in which the trimming groove for adjusting the resistance value is formed is formed. For example, JP-A-57-160102
As described in Japanese Patent Application Laid-Open Publication No. H10-107, the diameter of the arc-shaped resistive film can be made smaller than the case where it is provided on the outer periphery of the arc-shaped resistive film. This makes it possible to avoid an increase in the size of the chip variable resistor.
従って、本考案によると、円弧状抵抗膜の両端間にお
ける全抵抗値を、当該円弧状抵抗膜の塗着形成後におい
て、当該全抵抗値が予め要求されている値から大きくず
れている場合であっても、予め要求されている全抵抗値
に確実に近付けるように調節することができて、チップ
可変抵抗器の製造に際して製品の歩留り率を、当該チッ
プ可変抵抗器の大型化を招来することなく、大幅に向上
することができる効果を有する。Therefore, according to the present invention, the total resistance value between both ends of the arc-shaped resistive film, after the arc-shaped resistive film is formed by coating, when the total resistance value is largely deviated from a previously required value. Even if it is possible, it can be adjusted so as to reliably approach the total resistance value required in advance, and the production yield of the chip variable resistor leads to an increase in the size of the chip variable resistor. And has an effect that can be greatly improved.
以下、本考案の実施例を図面について説明するに、図
において符号１は、略中心に貫通孔２を備えたチップ型
の絶縁基板を示し、該絶縁基板１の上面には、抵抗膜３
が前記貫通孔２を中心とする少なくとも略半円の円弧状
に塗着形成され、また、前記絶縁基板１の一側面には、
前記円弧状抵抗膜３の両端に対する電極端子4,5が形成
されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings, reference numeral 1 denotes a chip-type insulating substrate having a through hole 2 substantially at the center, and a resistive film 3 is provided on the upper surface of the insulating substrate 1.
Is formed in an arc shape of at least a substantially semicircle centered on the through hole 2, and on one side surface of the insulating substrate 1,
Electrode terminals 4 and 5 are formed at both ends of the arc-shaped resistive film 3.
符号６は、前記絶縁基板１の下面に配設した金属板製
の中心電極端子板を示し、該中心電極端子板６には、前
記貫通孔２内に嵌まる中空軸７が一体的に造形されてい
る。Reference numeral 6 denotes a central electrode terminal plate made of a metal plate disposed on the lower surface of the insulating substrate 1. The central electrode terminal plate 6 is integrally formed with a hollow shaft 7 fitted into the through hole 2. Have been.
符号８は、金属板製の摺動子を示し、該摺動子８は、
これを前記中空軸７の先端に回転自在に被嵌したのち、
中空軸７の先端をかしめ広げることによって、中空軸７
に対して回転可能に指示されており、この摺動子８に
は、前記円弧状抵抗膜３に摺動自在に接触する摺動端子
９が一体的に造形されていると共に、当該摺動子８を廻
すためのドライバー工具の挿入溝10が設けられている。Reference numeral 8 indicates a slider made of a metal plate.
After this is rotatably fitted to the tip of the hollow shaft 7,
By crimping the tip of the hollow shaft 7, the hollow shaft 7
The slider 8 is integrally formed with a sliding terminal 9 that slidably contacts the arc-shaped resistive film 3. An insertion groove 10 for a driver tool for turning 8 is provided.
そして、前記円弧状抵抗膜３における幅寸法（Ｗ）
を、当該円弧状抵抗膜３の外径Ｄを大きくすることなく
内径ｄのみを小径にすることによって広幅にして、当該
円弧状抵抗膜３のうち前記摺動子８における摺動端子９
が接触する接触領域11（第３図に斜線を施した領域）よ
りも内側に、前記摺動子８における摺動端子９が接触し
ない非接触領域12を形成し、この非接触領域12に、当該
非接触領域12の内周縁から外側に向って放射状に延びる
複数条のトリミング溝部13を、円周方向に沿って適宜間
隔で設ける構成にする。なお、前記各トリミング溝部13
は、抵抗膜３を塗着形成したあとにおいて、レーザ又は
サンドブラストにて刻設する。The width dimension (W) of the arc-shaped resistance film 3
Is made wider by reducing only the inner diameter d without increasing the outer diameter D of the arc-shaped resistance film 3, and the sliding terminal 9 of the slider 8 in the arc-shaped resistance film 3 is reduced.
A non-contact area 12 where the sliding terminal 9 of the slider 8 does not contact is formed inside a contact area 11 (area shaded in FIG. 3) with which A plurality of trimming grooves 13 extending radially outward from the inner peripheral edge of the non-contact area 12 are provided at appropriate intervals along the circumferential direction. In addition, each trimming groove 13
Is formed by laser or sand blast after the resistive film 3 is formed by coating.
このように、円弧状抵抗膜３に非接触領域12を、この
非接触領域12に、複数条のトリミング溝部13を設ける構
成にしたことにより、前記円弧状抵抗膜３の両端の電極
端子4,5間における全抵抗値は、前記各トリミング溝部1
3の長さ寸法ｌの増減、及びトリミング溝部13の数の増
減にて変化するから、両電極端子4,5間における全抵抗
値を、円弧状抵抗膜３を塗着形成したあとにおいて、調
節することができるのである。As described above, the non-contact area 12 is provided in the arc-shaped resistance film 3 and the plurality of trimming grooves 13 are provided in the non-contact area 12, so that the electrode terminals 4 on both ends of the arc-shaped resistance film 3 are provided. The total resistance value between 5 is the same as that of each trimming groove 1
The total resistance value between the two electrode terminals 4 and 5 is adjusted after the arc-shaped resistive film 3 is formed by coating because the length of the length 3 changes with the increase and decrease of the length l and the number of the trimming grooves 13. You can do it.
なお、前記両電極端子4,5間における全抵抗値を調節
するための各トリミング溝部13は、第３図に示すよう
に、直線状にすることに限らず、各トリミング溝部13
を、第４図に示すように、Ｌ字状に形成しても良いので
ある。The trimming grooves 13 for adjusting the total resistance between the two electrode terminals 4 and 5 are not limited to being linear as shown in FIG.
May be formed in an L-shape as shown in FIG.
また、第５図に示すように、円弧状抵抗膜３における
非接触領域12に、円周方向に長手の複数条のスリット溝
14を、絶縁基板１に対して当該円弧状抵抗膜３を塗着形
成するときにおいて同時に形成しておき、前記トリミン
グ溝部13を、この各スリット溝14のうち任意のスリット
溝14に対して連通する如く刻設するようにしても良いの
であり、この実施例によると、各トリミング溝部13は、
その先端を、前記スリット溝14に連通するように刻設す
るだけで良いから、各トリミング溝部13の刻設に際して
発生する切り屑等が、前記抵抗膜３のうち摺動子８にお
ける摺動端子９が接触する接触領域11に対して付着する
ことを低減できると共に、各トリミング溝部13の刻設に
際して発生する亀裂が、前記抵抗膜３のうち摺動子８に
おける摺動端子９が接触する接触領域11まで延びること
を確実に防止できると云う利点を有する。As shown in FIG. 5, a plurality of slit grooves elongated in the circumferential direction are formed in the non-contact region 12 in the arc-shaped resistive film 3.
14 are formed at the same time when the arc-shaped resistive film 3 is applied to the insulating substrate 1, and the trimming groove portion 13 communicates with an arbitrary one of the slit grooves 14. In this embodiment, each trimming groove 13 is
It is only necessary to inscribe the tip so as to communicate with the slit groove 14, so that chips or the like generated at the time of engraving each trimming groove portion 13 may cause a sliding terminal of the resistive film 3 in the slider 8. 9 can be reduced from adhering to the contact area 11 with which the sliding terminal 9 of the resistive film 3 comes into contact with the sliding terminal 9 of the slider 8. This has the advantage that the extension to the region 11 can be reliably prevented.
図面は本考案の実施例を示し、第１図はチップ可変抵抗
器の縦断正面図、第２図は第１図の平面図、第３図は第
１図のIII−III視断面図、第４図及び第５図は他の実施
例を示す図である １……絶縁基板、２……貫通孔、３……円弧状抵抗膜、
4,5……電極端子、６……中心電極端子板、７……中空
軸、８……摺動子、９……摺動端子、11……接触領域、
12……非接触領域、13……トリミング溝部、14……スリ
ット溝。The drawings show an embodiment of the present invention. FIG. 1 is a vertical front view of a chip variable resistor, FIG. 2 is a plan view of FIG. 1, FIG. 3 is a cross-sectional view taken along line III-III of FIG. 4 and 5 are views showing another embodiment: 1 ... an insulating substrate, 2 ... a through hole, 3 ... an arc-shaped resistive film,
4,5 ... electrode terminal, 6 ... center electrode terminal plate, 7 ... hollow shaft, 8 ... slider, 9 ... slide terminal, 11 ... contact area,
12 ... non-contact area, 13 ... trimming groove, 14 ... slit groove.
Claims (1)
略半円の円弧状に形成した抵抗膜に対して摺動自在に接
触する摺動子を回転自在に軸支して成るチップ可変抵抗
器において、前記円弧状抵抗膜の幅寸法を、当該抵抗膜
のうち前記摺動子に対する接触領域より内周側の部位に
前記摺動子が接触しない非接触領域を設けるように広幅
に構成して、前記非接触領域に、その内周縁から外側に
向って放射状に延びるトリミング溝部を、抵抗膜の円周
方向に沿って適宜間隔で複数条設けたことを特徴とする
チップ可変抵抗器。1. A chip variable resistor comprising, on an upper surface of an insulating substrate, a sliding member rotatably supported by a slider slidably contacting a resistive film formed at least in a semicircular arc on the upper surface. The width of the arc-shaped resistive film is set to be wide so as to provide a non-contact area where the slider does not come into contact with a portion of the resistive film on the inner peripheral side of a contact area with the slider. A chip variable resistor, wherein a plurality of trimming grooves extending radially outward from an inner peripheral edge of the non-contact area are provided at appropriate intervals along a circumferential direction of the resistive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989125931U JP2542801Y2 (en) | 1989-10-26 | 1989-10-26 | Chip variable resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989125931U JP2542801Y2 (en) | 1989-10-26 | 1989-10-26 | Chip variable resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0363903U JPH0363903U (en) | 1991-06-21 |
| JP2542801Y2 true JP2542801Y2 (en) | 1997-07-30 |
Family
ID=31673776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989125931U Expired - Lifetime JP2542801Y2 (en) | 1989-10-26 | 1989-10-26 | Chip variable resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2542801Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4548967B2 (en) * | 2001-04-18 | 2010-09-22 | 花王株式会社 | Absorbent articles |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160102A (en) * | 1981-03-28 | 1982-10-02 | Koito Mfg Co Ltd | Resistor for variable resistance |
-
1989
- 1989-10-26 JP JP1989125931U patent/JP2542801Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0363903U (en) | 1991-06-21 |
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