JP2025509409A - ペロブスカイトの連続成膜 - Google Patents

ペロブスカイトの連続成膜 Download PDF

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Publication number
JP2025509409A
JP2025509409A JP2024553786A JP2024553786A JP2025509409A JP 2025509409 A JP2025509409 A JP 2025509409A JP 2024553786 A JP2024553786 A JP 2024553786A JP 2024553786 A JP2024553786 A JP 2024553786A JP 2025509409 A JP2025509409 A JP 2025509409A
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JP
Japan
Prior art keywords
perovskite
halide
precursor
deposition
metal
Prior art date
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Pending
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JP2024553786A
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English (en)
Japanese (ja)
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JP2025509409A5 (enExample
Inventor
ベインズ，トム
ボーモント，ニコラ
ベスト，ジェームス
ミランダ ペレス，ローラ
ケース，クリストファー
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Oxford Photovoltaics Ltd
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Oxford Photovoltaics Ltd
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Publication date
Application filed by Oxford Photovoltaics Ltd filed Critical Oxford Photovoltaics Ltd
Publication of JP2025509409A publication Critical patent/JP2025509409A/ja
Publication of JP2025509409A5 publication Critical patent/JP2025509409A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2024553786A 2022-03-11 2023-03-10 ペロブスカイトの連続成膜 Pending JP2025509409A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB2203452.4A GB202203452D0 (en) 2022-03-11 2022-03-11 Sequential deposition of perovskites
GB2203452.4 2022-03-11
PCT/GB2023/050577 WO2023170429A1 (en) 2022-03-11 2023-03-10 Sequential deposition of perovskites

Publications (2)

Publication Number Publication Date
JP2025509409A true JP2025509409A (ja) 2025-04-11
JP2025509409A5 JP2025509409A5 (enExample) 2026-02-03

Family

ID=81254924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024553786A Pending JP2025509409A (ja) 2022-03-11 2023-03-10 ペロブスカイトの連続成膜

Country Status (8)

Country Link
US (1) US20250268091A1 (enExample)
EP (1) EP4490336A1 (enExample)
JP (1) JP2025509409A (enExample)
KR (1) KR20240160196A (enExample)
CN (1) CN118829745A (enExample)
AU (1) AU2023232990A1 (enExample)
GB (1) GB202203452D0 (enExample)
WO (1) WO2023170429A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118910735A (zh) * 2024-07-17 2024-11-08 安徽工程大学 一种无铅双钙钛矿单晶发光材料及其制备方法和应用
CN118890941A (zh) * 2024-09-25 2024-11-01 深圳黑晶光电技术有限公司 一种钙钛矿层制备方法、叠层太阳能电池及制备方法
WO2026080973A1 (en) * 2024-10-14 2026-04-23 The University Of Queensland Tin perovskites, methods for preparation and applications therefor
KR102925103B1 (ko) * 2025-11-05 2026-02-06 충남대학교산학협력단 무기 페로브스카이트 박막의 제조 방법, 이의 제조 방법으로 제조된 무기 페로브스카이트 박막 및 이를 포함하는 페로브스카이트 태양전지

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
US10069025B2 (en) 2012-09-18 2018-09-04 Oxford University Innovation Limited Optoelectronic device
GB201412201D0 (en) 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
GB201420488D0 (en) 2014-11-18 2014-12-31 Oxford Photovoltaics Ltd Photovoltaic device
WO2016198889A1 (en) 2015-06-12 2016-12-15 Oxford Photovoltaics Limited Photovoltaic device
GB201520972D0 (en) 2015-11-27 2016-01-13 Isis Innovation Mixed cation perovskite
CN109478596B (zh) 2016-08-03 2023-07-21 南洋理工大学 卤化物钙钛矿薄膜和包含其的太阳能电池及其形成方法
GB2577492B (en) 2018-09-24 2021-02-10 Oxford Photovoltaics Ltd Method of forming a crystalline or polycrystalline layer of an organic-inorganic metal halide perovskite
US10930494B2 (en) 2019-04-09 2021-02-23 Swift Solar Inc. Vapor phase transport system and method for depositing perovskite semiconductors

Also Published As

Publication number Publication date
EP4490336A1 (en) 2025-01-15
WO2023170429A1 (en) 2023-09-14
US20250268091A1 (en) 2025-08-21
AU2023232990A1 (en) 2024-09-05
GB202203452D0 (en) 2022-04-27
CN118829745A (zh) 2024-10-22
KR20240160196A (ko) 2024-11-08

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