JP2025032419A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2025032419A
JP2025032419A JP2023137670A JP2023137670A JP2025032419A JP 2025032419 A JP2025032419 A JP 2025032419A JP 2023137670 A JP2023137670 A JP 2023137670A JP 2023137670 A JP2023137670 A JP 2023137670A JP 2025032419 A JP2025032419 A JP 2025032419A
Authority
JP
Japan
Prior art keywords
region
semiconductor
gate electrode
type
work function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023137670A
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English (en)
Japanese (ja)
Other versions
JP2025032419A5 (https=
Inventor
雅嗣 長井
Masatsugu Nagai
大輝 畑田
Daiki Hatada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2023137670A priority Critical patent/JP2025032419A/ja
Priority to CN202311708073.1A priority patent/CN119562561A/zh
Priority to US18/590,548 priority patent/US20250081577A1/en
Publication of JP2025032419A publication Critical patent/JP2025032419A/ja
Publication of JP2025032419A5 publication Critical patent/JP2025032419A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs

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  • Electrodes Of Semiconductors (AREA)
JP2023137670A 2023-08-28 2023-08-28 半導体装置 Pending JP2025032419A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023137670A JP2025032419A (ja) 2023-08-28 2023-08-28 半導体装置
CN202311708073.1A CN119562561A (zh) 2023-08-28 2023-12-13 半导体装置
US18/590,548 US20250081577A1 (en) 2023-08-28 2024-02-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023137670A JP2025032419A (ja) 2023-08-28 2023-08-28 半導体装置

Publications (2)

Publication Number Publication Date
JP2025032419A true JP2025032419A (ja) 2025-03-12
JP2025032419A5 JP2025032419A5 (https=) 2026-01-05

Family

ID=94740835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023137670A Pending JP2025032419A (ja) 2023-08-28 2023-08-28 半導体装置

Country Status (3)

Country Link
US (1) US20250081577A1 (https=)
JP (1) JP2025032419A (https=)
CN (1) CN119562561A (https=)

Also Published As

Publication number Publication date
US20250081577A1 (en) 2025-03-06
CN119562561A (zh) 2025-03-04

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