JP2024135217A - 半導体装置および機器 - Google Patents

半導体装置および機器 Download PDF

Info

Publication number
JP2024135217A
JP2024135217A JP2023045788A JP2023045788A JP2024135217A JP 2024135217 A JP2024135217 A JP 2024135217A JP 2023045788 A JP2023045788 A JP 2023045788A JP 2023045788 A JP2023045788 A JP 2023045788A JP 2024135217 A JP2024135217 A JP 2024135217A
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor layer
semiconductor region
layer
conductive path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023045788A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024135217A5 (https=
Inventor
晃聖 上平
Terumasa Kamihira
寛 関根
Hiroshi Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2023045788A priority Critical patent/JP2024135217A/ja
Priority to US18/591,057 priority patent/US20240321734A1/en
Publication of JP2024135217A publication Critical patent/JP2024135217A/ja
Publication of JP2024135217A5 publication Critical patent/JP2024135217A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
JP2023045788A 2023-03-22 2023-03-22 半導体装置および機器 Pending JP2024135217A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023045788A JP2024135217A (ja) 2023-03-22 2023-03-22 半導体装置および機器
US18/591,057 US20240321734A1 (en) 2023-03-22 2024-02-29 Semiconductor device and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023045788A JP2024135217A (ja) 2023-03-22 2023-03-22 半導体装置および機器

Publications (2)

Publication Number Publication Date
JP2024135217A true JP2024135217A (ja) 2024-10-04
JP2024135217A5 JP2024135217A5 (https=) 2026-03-09

Family

ID=92803204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023045788A Pending JP2024135217A (ja) 2023-03-22 2023-03-22 半導体装置および機器

Country Status (2)

Country Link
US (1) US20240321734A1 (https=)
JP (1) JP2024135217A (https=)

Also Published As

Publication number Publication date
US20240321734A1 (en) 2024-09-26

Similar Documents

Publication Publication Date Title
US20240405044A1 (en) Solid-state imaging apparatus and method for manufacturing the solid-state imaging apparatus having sealing portion disposed in bonded members
US9508775B2 (en) Solid-state imaging apparatus and manufacturing method of solid-state imaging apparatus
US20240088188A1 (en) Imaging device and electronic device
CN110137190B (zh) 光电转换设备和装置
CN107039479B (zh) 固体摄像器件和电子装置
TWI531053B (zh) 半導體裝置與其形成方法與影像感測裝置
EP2081229A2 (en) Solid-state imaging device, method of fabricating solid-state imaging device
US10950649B2 (en) Backside illuminated image sensor and method of manufacturing the same
US11296138B2 (en) Backside illuminated image sensor and method of manufacturing the same
US11362130B2 (en) Backside illuminated image sensor and method of manufacturing the same
JP2021027276A (ja) 光電変換装置および機器
US10923522B2 (en) Backside illuminated image sensor and method of manufacturing the same
JP2019102619A (ja) 半導体装置および機器
TWI861247B (zh) 攝像元件及攝像裝置
JP2024135217A (ja) 半導体装置および機器
JP2023088114A (ja) 光電変換装置、機器、および、光電変換装置の製造方法
US20190115383A1 (en) Photoelectric conversion apparatus and equipment
JP2023152034A (ja) 光電変換装置および機器
JP2024154316A (ja) 光電変換装置および機器
JP2024038808A (ja) 光電変換装置、機器および光電変換装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260227

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20260227