JP2024035123A5 - - Google Patents
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- JP2024035123A5 JP2024035123A5 JP2023134361A JP2023134361A JP2024035123A5 JP 2024035123 A5 JP2024035123 A5 JP 2024035123A5 JP 2023134361 A JP2023134361 A JP 2023134361A JP 2023134361 A JP2023134361 A JP 2023134361A JP 2024035123 A5 JP2024035123 A5 JP 2024035123A5
- Authority
- JP
- Japan
- Prior art keywords
- photoresist film
- film
- absorption
- ethylenically unsaturated
- unsaturated compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229920002120 photoresistant polymer Polymers 0.000 claims 15
- 238000010521 absorption reaction Methods 0.000 claims 3
- -1 acrylic acid compound Chemical class 0.000 claims 3
- 239000002131 composite material Substances 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 238000000870 ultraviolet spectroscopy Methods 0.000 claims 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims 1
- 238000002835 absorbance Methods 0.000 claims 1
- 238000004458 analytical method Methods 0.000 claims 1
- 239000012496 blank sample Substances 0.000 claims 1
- 229910052805 deuterium Inorganic materials 0.000 claims 1
- 239000003999 initiator Substances 0.000 claims 1
- 229920000139 polyethylene terephthalate Polymers 0.000 claims 1
- 239000005020 polyethylene terephthalate Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 229920000098 polyolefin Polymers 0.000 claims 1
- 238000005070 sampling Methods 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Claims (9)
フォトレジストフィルムを紫外可視分光法で特徴づける場合、フォトレジストフィルムが４０５ｎｍの吸収Ａ４０５ｎｍ、及び４３６ｎｍの吸収Ａ４３６ｎｍを有し、０＜Ａ４０５ｎｍ／Ｔ≦０．００６、及び０＜Ａ４３６ｎｍ／Ｔ≦０．００５であり、厚さＴが６０μｍ～６００μｍであり、
紫外可視分光法が、紫外可視分光光度計を用いて以下の操作条件で測定され、
フォトレジストフィルムが入射光の方向に対して垂直に配置され、回折格子が光スプリッターとして構成され、試験温度が２５℃であり、試験圧力が１気圧であり、分析モードが吸光度であり、走査波長の範囲が１９０ｎｍ～１１００ｎｍであり、ブランクサンプルは空気であり、走査速度は２２００ｎｍ／分であり、光源を重水素ランプからタングステンランプに切り替えるスイッチ波長は３４０．８ｎｍであり、サンプリング間隔は０．２ｎｍであり、スリット幅は２．０ｎｍである、フォトレジストフィルム。 a photoresist film having a thickness T in μm,
When the photoresist film is characterized by UV-Vis spectroscopy, the photoresist film has an absorption at 405 nm, A 405nm , and an absorption at 436 nm, A 436nm , where 0<A 405nm /T≦0.006, and 0<A 436nm /T≦0.005, and a thickness, T, of 60 μm to 600 μm;
UV-Vis spectroscopy was measured using a UV-Vis spectrophotometer under the following operating conditions:
The photoresist film is arranged perpendicular to the direction of the incident light, the diffraction grating is configured as a light splitter, the test temperature is 25° C., the test pressure is 1 atmosphere, the analysis mode is absorbance, the scanning wavelength range is 190 nm to 1100 nm, the blank sample is air, the scanning speed is 2200 nm/min, the switch wavelength for switching the light source from a deuterium lamp to a tungsten lamp is 340.8 nm, the sampling interval is 0.2 nm, and the slit width is 2.0 nm.
（Ｂ）エチレン性不飽和化合物の成分、及び
（Ｃ）光重合開始剤を含む、請求項１に記載のフォトレジストフィルム。 (A) an alkali-soluble polymer,
2. The photoresist film according to claim 1, comprising: (B) an ethylenically unsaturated compound component; and (C) a photopolymerization initiator.
フォトレジストフィルムの少なくとも１つの表面上の保護フィルムを含む、複合体フィルム。 A composite film comprising the photoresist film of any one of claims 1 to 7 and a protective film on at least one surface of the photoresist film.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263374044P | 2022-08-31 | 2022-08-31 | |
| US63/374,044 | 2022-08-31 | ||
| CN202310582851.0A CN117631439A (en) | 2022-08-31 | 2023-05-23 | Photoresist film and application thereof |
| CN202310582851.0 | 2023-05-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024035123A JP2024035123A (en) | 2024-03-13 |
| JP2024035123A5 true JP2024035123A5 (en) | 2024-04-25 |
Family
ID=90030947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023134361A Pending JP2024035123A (en) | 2022-08-31 | 2023-08-22 | Photoresist film and application thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2024035123A (en) |
| KR (1) | KR20240031884A (en) |
| CN (1) | CN117631439A (en) |
| TW (1) | TWI841396B (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114761874A (en) * | 2019-12-31 | 2022-07-15 | 可隆工业株式会社 | Photosensitive resin layer, dry film photoresist using the same, and photosensitive element |
-
2023
- 2023-05-23 CN CN202310582851.0A patent/CN117631439A/en active Pending
- 2023-05-23 TW TW112119118A patent/TWI841396B/en active
- 2023-08-07 KR KR1020230102640A patent/KR20240031884A/en active Search and Examination
- 2023-08-22 JP JP2023134361A patent/JP2024035123A/en active Pending
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