JP2024021842A - display device - Google Patents

Abstract

An object of the present invention is to provide a display device that can improve display quality. SOLUTION: A display device includes a plurality of pixels, and each of the plurality of pixels includes a TFT and a light shielding layer that shields the TFT from light. A TFT has a gate electrode provided on a substrate, a gate insulating film provided on the gate electrode, a semiconductor layer provided on the gate insulating film, and a source electrode and a drain electrode provided on the semiconductor layer. including. The gate electrode is connected to the scanning line. The source electrode is connected to the pixel electrode. The drain electrode is connected to the signal line. The width of the light shielding layer is wider than the width of the semiconductor layer. The source electrode is configured to cover one corner of the semiconductor layer. The drain electrode is configured to cover one corner of the semiconductor layer. [Selection diagram] Figure 3

Description

The present invention relates to a display device.

Active matrix liquid crystal display devices use thin film transistors (TFTs) as switching elements. A TFT includes a gate electrode provided on a substrate, a gate insulating film provided on the gate electrode, a semiconductor layer provided on the gate insulating film, a source electrode partially provided on the semiconductor layer, and a gate insulating film provided on the gate electrode. and a drain electrode. The gate electrode is connected to a scanning line, the source electrode is connected to a pixel electrode, and the drain electrode is connected to a signal line.

When light enters the semiconductor layer of the TFT when the TFT is off, a leakage current is generated in the TFT due to the photoelectric effect. This leakage current causes flicker, crosstalk, etc. in the liquid crystal display device, and the display quality of the liquid crystal display device deteriorates.

In order to reduce the leakage current of a TFT, there is a method of providing a light shielding layer to cover the semiconductor layer of the TFT to shield external light incident from the surface of the liquid crystal display device. When the width of the light shielding layer is wider than the width of the gate electrode, light from the backlight is reflected by the light shielding layer, and the TFT is irradiated with this reflected light. This causes leakage current to occur in the TFT.

When light from a backlight placed on the back surface of a liquid crystal display device enters a TFT, leakage current is generated in the TFT. There is a method of blocking backlight light with the gate electrode by increasing the width of the gate electrode. However, in this case, the aperture ratio of the pixel decreases.

Japanese Patent Application Publication No. 10-20298

The present invention provides a display device that can improve display quality.

According to a first aspect of the present invention, each of the plurality of pixels includes a TFT (thin film transistor) and a light shielding layer that shields the TFT from light, and the TFT is provided on a substrate. a gate electrode provided on the gate electrode, a gate insulating film provided on the gate electrode, a semiconductor layer provided on the gate insulating film, and a source electrode and a drain electrode provided on the semiconductor layer, The gate electrode is connected to a scanning line, the source electrode is connected to a pixel electrode, the drain electrode is connected to a signal line, the width of the light shielding layer is wider than the width of the semiconductor layer, and the source electrode is connected to a pixel electrode. is configured to cover one corner of the semiconductor layer, and the drain electrode is configured to cover one corner of the semiconductor layer.

According to a second aspect of the present invention, there is provided the display device according to the first aspect, wherein the width of the gate electrode is narrower than the width of the semiconductor layer.

According to a third aspect of the present invention, there is provided the display device according to the first aspect, wherein the width of the gate electrode is narrower than the width of the light shielding layer.

According to a fourth aspect of the present invention, the source electrode is configured to cover two corners of the semiconductor layer, and the drain electrode is configured to cover two corners of the semiconductor layer. A display device according to an aspect is provided.

According to a fifth aspect of the present invention, there is provided the display device according to the first aspect, wherein the light shielding layer is electrically connected to a common electrode arranged opposite to the pixel electrode.

According to the present invention, it is possible to provide a display device that can improve display quality.

FIG. 1 is a circuit diagram of a liquid crystal display device according to an embodiment of the invention. FIG. 2 is a schematic plan view of pixels included in the pixel array. FIG. 3 is a plan view showing an extracted TFT included in a pixel. 4 is a cross-sectional view of the TFT taken along line A-A' in FIG. 3. FIG. FIG. 5 is a diagram illustrating one step of a method for manufacturing a liquid crystal display device. FIG. 6 is a diagram illustrating one step of a method for manufacturing a liquid crystal display device. FIG. 7 is a diagram illustrating one step of a method for manufacturing a liquid crystal display device. FIG. 8 is a diagram illustrating one step of a method for manufacturing a liquid crystal display device. FIG. 9 is a diagram illustrating one step of a method for manufacturing a liquid crystal display device. FIG. 10 is a graph illustrating the relationship between TFT off-state current and incident light intensity. FIG. 11 is a plan view of a TFT according to a comparative example. FIG. 12 is a cross-sectional view of the TFT taken along line B-B' in FIG. 11. FIG. 13 is a plan view of a TFT according to a modified example.

Hereinafter, embodiments will be described with reference to the drawings. However, the drawings are schematic or conceptual, and the dimensions, proportions, etc. of each drawing are not necessarily the same as those in reality. Further, even when the same parts are shown in two drawings, the relationships and ratios of the dimensions may be different. In particular, some of the embodiments shown below illustrate devices and methods for embodying the technical idea of the present invention, and the technical idea of the present invention is is not specified. In the following description, elements having the same functions and configurations are denoted by the same reference numerals, and redundant description will be omitted.

[1] Overall configuration of liquid crystal display device 1 In this embodiment, a liquid crystal display device will be described as an example of a display device. The liquid crystal display device is an active matrix type liquid crystal display device.

FIG. 1 is a circuit diagram of a liquid crystal display device 1 according to an embodiment of the present invention. The liquid crystal display device 1 includes a pixel array 2, a scanning line drive circuit 3, a signal line drive circuit 4, and a common electrode drive circuit 5.

The pixel array 2 includes a plurality of pixels PX arranged in a matrix. The pixel array 2 includes a plurality of scanning lines GL1 to GLm, each extending in the X direction (also referred to as the row direction), and a plurality of signal lines SL1 to SLm, each extending in the Y direction (also referred to as the column direction) orthogonal to the X direction. SLn is provided. "m" and "n" are each an integer of 2 or more. A pixel PX is arranged in the intersection area of the scanning line GL and the signal line SL.

The pixel PX includes a switching element (active element) 6, a liquid crystal capacitor (liquid crystal element) Clc, and a storage capacitor Cs. As the switching element 6, for example, a thin film transistor (TFT) is used, and an n-channel TFT is used. Note that the source and drain of a transistor change depending on the direction of current flowing through the transistor, but in the following description, an example of a connection state of the transistor will be described. However, it goes without saying that the source and drain are not fixed as their names suggest.

As described later, the TFT included in the pixel PX is configured by two or more TFTs connected in parallel. In FIG. 1, a plurality of TFTs connected in parallel are collectively shown as one TFT.

The drain of the TFT 6 is connected to the signal line SL, its gate is connected to the scanning line GL, and its source is connected to one electrode of the liquid crystal capacitor Clc. A liquid crystal capacitor Clc as a liquid crystal element is composed of a pixel electrode, a common electrode, and a liquid crystal layer sandwiched therebetween. A common voltage Vcom is applied by the common electrode drive circuit 5 to the other electrode of the liquid crystal capacitor Clc.

One electrode of the storage capacitor Cs is connected to one electrode of the liquid crystal capacitor Clc. A common voltage Vcom is applied by the common electrode drive circuit 5 to the other electrode of the storage capacitor Cs. The storage capacitor Cs has a function of suppressing potential fluctuations occurring in the pixel electrode and holding the drive voltage applied to the pixel electrode until a drive voltage corresponding to the next signal is applied. The storage capacitor Cs is composed of a pixel electrode, a storage capacitor line, and an insulating layer sandwiched therebetween. A storage capacitor voltage different from the common voltage Vcom may be applied to the other electrode (storage capacitor line) of the storage capacitor Cs.

A backlight (not shown) is arranged on the back surface of the pixel array 2. The backlight irradiates the back surface of the pixel array 2 with illumination light. As the backlight, for example, a direct type or side light type (edge light type) LED backlight is used.

The scanning line drive circuit 3 is connected to a plurality of scanning lines GL. The scanning line drive circuit 3 sends a scanning signal for turning on/off the TFT to the pixel array 2 based on a control signal sent from a control circuit (not shown).

The signal line drive circuit 4 is electrically connected to the plurality of signal lines SL. The signal line drive circuit 4 receives control signals and display data from the control circuit. The signal line drive circuit 4 sends a plurality of gradation signals (a plurality of drive voltages) corresponding to display data to the pixel array 2 based on the control signal.

The common electrode drive circuit 5 generates a common voltage Vcom and supplies it to the common electrode and storage capacitor line in the pixel array 2.

[2] Configuration of Pixel Array 2 Next, the configuration of the pixel array 2 will be described.

FIG. 2 is a schematic plan view of the pixels PX included in the pixel array 2. The pixel PX includes a TFT 6, a pixel electrode 7, and a storage electrode 9. The pixel electrode 7 extends in the Y direction. The pixel electrode 7 has an area slightly smaller than the area occupied by the pixel PX.

The TFT 6 includes a gate electrode 11, a semiconductor layer 13, a source electrode 15, and a drain electrode 17. The specific configuration of the TFT 6 will be described later.

Gate electrode 11 extends in the X direction. The gate electrode 11 functions as a scanning line GL.

Source electrode 15 is electrically connected to pixel electrode 7 via through hole 8 . The through hole 8 corresponds to an electrode portion recessed toward the source electrode 15.

Storage electrode 9 extends in the X direction. The storage electrode 9 is arranged below the pixel electrode 7 and is configured to partially overlap the pixel electrode 7. An insulating layer is provided between the storage electrode 9 and the pixel electrode 7. The storage electrode 9 corresponds to the storage capacitor line described above and constitutes a storage capacitor.

Drain electrode 17 is electrically connected to signal line SL.

FIG. 3 is a plan view showing an extracted TFT 6 included in the pixel PX. FIG. 4 is a cross-sectional view of the TFT 6 taken along line A-A' in FIG.

The TFT 6 is, for example, a bottom gate type and channel etch type TFT. A bottom-gate TFT is a TFT in which a gate electrode that functions as a scanning line is provided below a source electrode and a drain electrode (on the insulating substrate side). A bottom gate TFT is also called an inverted staggered TFT. A channel-etched TFT is a TFT manufactured using a manufacturing method in which a semiconductor layer is slightly etched when separating a source electrode and a drain electrode. Note that this embodiment is not limited to channel-etched TFTs, and may be applied to other types of TFTs.

The liquid crystal display device 1 includes a substrate (also referred to as a TFT substrate) 10 on which TFTs and pixel electrodes are arranged. The TFT substrate 10 is made of a transparent and insulating substrate (for example, a glass substrate or a plastic substrate).

Although not shown, the liquid crystal display device 1 includes a counter substrate disposed opposite to the TFT substrate 10 and a liquid crystal layer sandwiched between the TFT substrate 10 and the counter substrate. The counter substrate is made of a transparent and insulating substrate (for example, a glass substrate or a plastic substrate). A black matrix, a color filter, a common electrode, and the like are provided on the counter substrate.

A gate electrode 11 is provided on the TFT substrate 10 . The gate electrode 11 functions as the scanning line GL and is electrically connected to the scanning line GL.

A gate insulating film 12 is provided on the gate electrode 11 and the TFT substrate 10 . The gate insulating film 12 is also referred to as an insulating layer.

A semiconductor layer 13 is provided on the gate insulating film 12 . The semiconductor layer 13 extends in the X direction and has a rectangular shape. In this specification, a quadrilateral includes a shape with rounded corners due to the manufacturing process. Semiconductor layer 13 is arranged to overlap gate electrode 11 .

A source electrode 15 is provided on the semiconductor layer 13 with an ohmic contact layer 14 interposed therebetween. Source electrode 15 extends in the X direction. The ohmic contact layer 14 has a function of improving electrical connection between the semiconductor layer and the electrode. The ohmic contact layer 14 is composed of an n ⁺ -type semiconductor layer into which a high concentration of n-type impurity is introduced. The ohmic contact layer 14 may be omitted. Source electrode 15 is electrically connected to pixel electrode 7 .

A drain electrode 17 is provided on the semiconductor layer 13 with an ohmic contact layer 16 interposed therebetween. Drain electrode 17 extends in the X direction. The configuration of the ohmic contact layer 16 is the same as that of the ohmic contact layer 14. The ohmic contact layer 16 may be omitted. Drain electrode 17 is electrically connected to signal line SL.

An insulating layer 18 is provided on the source electrode 15 and drain electrode 17.

A light shielding layer 19 is provided on the insulating layer 18. The light blocking layer 19 has a function of blocking light. The light shielding layer 19 extends in the X direction. The light shielding layer 19 is configured to cover the TFT 6. The light shielding layer 19 is electrically connected to a common electrode, and a common voltage Vcom is applied thereto.

An insulating layer 20 is provided on the light shielding layer 19. The above-mentioned pixel electrode 7 is provided on the insulating layer 20.

(Examples of materials)
As the semiconductor layer 13, amorphous silicon is used.

The gate electrode 11, the source electrode 15, the drain electrode 17, the scanning line GL, and the signal line SL may be made of, for example, any one of aluminum (Al), molybdenum (Mo), chromium (Cr), and tungsten (W), or An alloy containing one or more of these types is used.

As the pixel electrode 7 and the storage electrode 9, transparent electrodes are used, such as ITO (indium tin oxide).

As the light shielding layer 19, aluminum (Al), an alloy containing aluminum (Al), or the like is used.

A transparent insulating material is used for the gate insulating film 12, the insulating layer 18, and the insulating layer 20, such as silicon nitride (SiN).

(Dimension conditions)
Next, dimensional conditions for the gate electrode 11, semiconductor layer 13, source electrode 15, drain electrode 17, and light shielding layer 19 will be explained.

The width of the gate electrode 11 (length in the Y direction) is W1, the width of the semiconductor layer 13 (length in the Y direction) is W2, and the width of the light shielding layer 19 (length in the Y direction) is W3.

The width W1 of the gate electrode 11 is narrower than the width W2 of the semiconductor layer 13. Both ends of the gate electrode 11 in the Y direction are covered with a semiconductor layer 13.

The source electrode 15 is arranged to partially overlap the semiconductor layer 13 and is configured to cover one end of the semiconductor layer 13 in the Y direction. The source electrode 15 has an area that covers two corners of the semiconductor layer 13. The length of the source electrode 15 in the X direction is longer than the length of the semiconductor layer 13 in the X direction.

The drain electrode 17 is arranged to partially overlap the semiconductor layer 13 and is configured to cover the other end of the semiconductor layer 13 in the Y direction. The drain electrode 17 has an area that covers two corners of the semiconductor layer 13. The length of the drain electrode 17 in the X direction is longer than the length of the semiconductor layer 13 in the X direction.

The light shielding layer 19 has an area that covers the semiconductor layer 13. The width W3 of the light shielding layer 19 is wider than the width W1 of the gate electrode 11 and wider than the width W2 of the semiconductor layer 13. Both ends of the gate electrode 11 in the Y direction are covered with a light shielding layer 19 . Both ends of the semiconductor layer 13 in the Y direction are covered with a light shielding layer 19 . In a region other than the region occupied by the TFT 6, the width of the light shielding layer 19 is set to be equal to or slightly wider than the width of the gate electrode 11, for example.

The length of the light shielding layer 19 in the X direction is longer than the length of the semiconductor layer 13 in the X direction. The length of the light shielding layer 19 in the X direction is longer than the length of the source electrode 15 and the drain electrode 17 in the X direction.

[3] Manufacturing method Next, a manufacturing method of the liquid crystal display device 1 will be described.

As shown in FIG. 5, a TFT substrate 10 made of a glass substrate is prepared. Subsequently, a metal layer made of an alloy containing molybdenum (Mo) is formed on the TFT substrate 10 using a sputtering method. Subsequently, this metal layer is processed into a predetermined pattern using photolithography to form the gate electrode 11.

Subsequently, as shown in FIG. 6, a gate insulating film 12 made of silicon nitride (SiN) is formed to cover the gate electrode 11 using a CVD (Chemical Vapor Deposition) method. Subsequently, using the CVD method, a semiconductor layer 13 made of amorphous silicon and an n-type amorphous silicon layer 14A made of amorphous silicon doped with a high concentration of n-type impurities are formed in this order. Subsequently, the laminated film consisting of the semiconductor layer 13 and the n-type amorphous silicon layer 14A is processed into a predetermined pattern using a photolithography method. In plan view, the width of the semiconductor layer 13 is wider than the width of the gate electrode 11.

Subsequently, as shown in FIG. 7, a metal layer made of an alloy containing molybdenum (Mo) is formed using a sputtering method. Subsequently, this metal layer is processed into a predetermined pattern using photolithography to form a source electrode 15 and a drain electrode 17. In plan view, the source electrode 15 and the drain electrode 17 are formed to cover the four corners of the semiconductor layer 13.

Subsequently, as shown in FIG. 8, the n-type amorphous silicon layer 14A provided between the source electrode 15 and the drain electrode 17 is etched, and the semiconductor layer 13 is half-etched using a photolithography method. Further, the n-type amorphous silicon layer 14A is partially etched to form an ohmic contact layer 14 electrically connected to the source electrode 15 and an ohmic contact layer 16 electrically connected to the drain electrode 17. Ru.

Subsequently, as shown in FIG. 9, an insulating layer 18 made of silicon nitride (SiN) is formed using the CVD method so as to cover the source electrode 15 and drain electrode 17.

Subsequently, a metal layer made of an alloy containing aluminum (Al) is formed on the insulating layer 18 using a sputtering method. Subsequently, this metal layer is processed into a predetermined pattern using a photolithography method to form a light shielding layer 19. In plan view, the light shielding layer 19 is wider than the width of the gate electrode 11 and the semiconductor layer 13.

Subsequently, as shown in FIG. 4, an insulating layer 20 made of silicon nitride (SiN) is formed using the CVD method so as to cover the light shielding layer 19.

Through the above steps, the bottom gate type TFT 6 is formed. Thereafter, a black matrix, a color filter, a common electrode, and the like are provided to form a counter substrate. Subsequently, a liquid crystal layer surrounded by a sealant is formed between the TFT substrate 10 and the counter substrate.

[4] Operation The operation of the liquid crystal display device 1 configured as described above will be explained.

A backlight is arranged on the back surface of the pixel array 2. The backlight is arranged on the opposite side of the TFT substrate 10 to the side where the TFT 6 is provided. The backlight irradiates the back surface of the pixel array 2 with illumination light. Light from the backlight enters the TFT 6 from the TFT substrate 10 side.

The gate electrode 11 is made of a material that blocks light. The light from the backlight is blocked by the gate electrode 11. Therefore, the amount of light incident on the semiconductor layer 13 is reduced.

External light enters the TFT 6 from above. External light includes sunlight and light emitted by indoor lighting.

External light entering the liquid crystal display device 1 from the side opposite to the backlight is blocked by the light blocking layer 19. Therefore, external light incident on the semiconductor layer 13 is reduced. Further, the width of the light shielding layer 19 is set wider than the width of the semiconductor layer 13. Therefore, external light incident on the semiconductor layer 13 can be further reduced.

In this embodiment, since the width of the light shielding layer 19 is wider than the width of the gate electrode 11, there is a possibility that light from the backlight is reflected on the bottom surface of the light shielding layer 19 and this reflected light enters the semiconductor layer 13. However, in this embodiment, the source electrode 15 and the drain electrode 17 are configured to cover the four corners of the semiconductor layer 13. The source electrode 15 and the drain electrode 17 are made of a material that blocks light. That is, both ends of the semiconductor layer 13 in the Y direction can be shielded from light by the source electrode 15 and the drain electrode 17. Therefore, the reflected light from the backlight reflected on the bottom surface of the light shielding layer 19 is blocked by the source electrode 15 and the drain electrode 17. This reduces the amount of light that enters the semiconductor layer 13.

In this way, in this embodiment, the light from the backlight, the external light incident on the liquid crystal display device 1, and the reflected light from the backlight reflected on the bottom surface of the light shielding layer 19 are transmitted to the semiconductor layer of the TFT 6. 13 can be reduced. Thereby, leakage current when the TFT 6 is off can be reduced.

FIG. 10 is a graph illustrating the relationship between the off-state current of the TFT 6 and the intensity of incident light. The solid line in FIG. 10 is a graph regarding the off-state current of this embodiment. The horizontal axis of FIG. 10 is the incident light intensity (cd/m ² ), and the vertical axis is the off-state current (A) of the TFT. The off-state current corresponds to the leakage current of the TFT when it is off. The incident light intensity is the intensity of light incident from the back surface of the pixel array 2, and corresponds to the light intensity of the backlight.

It can be seen that in this embodiment, even if the incident light intensity increases, the off-state current hardly increases.

Next, the configuration of a liquid crystal display device according to a comparative example will be described. FIG. 11 is a plan view of a TFT 6A according to a comparative example. FIG. 12 is a cross-sectional view of the TFT 6A taken along line B-B' in FIG. 11.

The TFT 6A includes a gate electrode 11, a gate insulating film 12, a semiconductor layer 13, an ohmic contact layer 14, a source electrode 15, an ohmic contact layer 16, and a drain electrode 17. The TFT 6A is shielded from light by a light shielding layer 19.

The width of the gate electrode 11 is wider than the width of the semiconductor layer 13. Therefore, it is possible to reduce the incidence of light from the backlight into the semiconductor layer 13.

The source electrode 15 and the drain electrode 17 are arranged so as to partially cover the semiconductor layer 13. The source electrode 15 and the drain electrode 17 are arranged inside the semiconductor layer 13.

The width of the light shielding layer 19 is wider than the width of the semiconductor layer 13 and the width of the gate electrode 11. Therefore, it is possible to reduce external light entering the liquid crystal display device from the side opposite to the backlight from entering the semiconductor layer 13 of the TFT 6A.

The comparative example does not have a structure for blocking the reflected light from the backlight reflected at the bottom surface of the light blocking layer 19. Therefore, the reflected light from the backlight reflected by the bottom surface of the light shielding layer 19 enters the semiconductor layer 13 .

Further, in the comparative example, the width of the gate electrode 11 is wider than the width of the semiconductor layer 13. Therefore, in the comparative example, the aperture ratio of the pixel is reduced.

FIG. 10 also includes a graph of the off-state current of the TFT 6A according to the comparative example. In the comparative example, the off-state current increases as the incident light intensity increases. Compared to the comparative example, the off-state current can be significantly reduced in this embodiment.

[5] Modification Next, a liquid crystal display device 1 according to a modification will be described.

FIG. 13 is a plan view of a TFT 6 according to a modification. The cross-sectional view taken along line A-A' in FIG. 13 is the same as FIG. 4.

Source electrode 15 is configured to cover one corner of semiconductor layer 13 . That is, the length of the source electrode 15 in the X direction is shorter than that of the configuration shown in FIG. 3 described above. The source electrode 15 is configured to partially cover one end of the semiconductor layer 13 in the Y direction.

Drain electrode 17 is configured to cover one corner of semiconductor layer 13 . That is, the length of the drain electrode 17 in the X direction is shorter than that of the configuration shown in FIG. 3 described above. The drain electrode 17 is configured to partially cover one end of the semiconductor layer 13 in the Y direction.

As in the modification, the lengths of the source electrode 15 and the drain electrode 17 in the X direction can be set as appropriate depending on the characteristics required of the TFT 6.

Also in the modified example, the off-state current of the TFT 6 can be reduced compared to the comparative example.

[6] Effects of Embodiment According to this embodiment, it is possible to suppress light from the backlight from entering the TFT 6, and it is also possible to suppress external light from entering the TFT 6. Thereby, leakage current of the TFT 6 can be reduced. As a result, a display device capable of improving display quality can be realized.

Further, the width of the gate electrode 11 is made narrower than the width of the semiconductor layer 13 and the width of the light shielding layer 19. Thereby, the aperture ratio of the pixel PX can be increased.

That is, according to this embodiment, the leakage current of the TFT 6 caused by the light of the backlight can be reduced without reducing the aperture ratio of the pixel PX.

In the embodiments described above, a liquid crystal display device is used as an example of the display device. This embodiment is also applicable to display devices other than liquid crystal display devices. For example, this embodiment is also applicable to an organic EL (electroluminescence) display device.

The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the invention at the implementation stage. Moreover, each embodiment may be implemented in combination as appropriate, and in that case, a combined effect can be obtained. Furthermore, the embodiments described above include various inventions, and various inventions can be extracted by combinations selected from the plurality of constituent features disclosed. For example, if a problem can be solved and an effect can be obtained even if some constituent features are deleted from all the constituent features shown in the embodiment, the configuration from which these constituent features are deleted can be extracted as an invention.

DESCRIPTION OF SYMBOLS 1...Liquid crystal display device, 2...Pixel array, 3...Scanning line drive circuit, 4...Signal line drive circuit, 5...Common electrode drive circuit, 6...TFT, 7...Pixel electrode, 8...Through hole, 9...Storage electrode , 10... TFT substrate, 11... gate electrode, 12... gate insulating film, 13... semiconductor layer, 14... ohmic contact layer, 15... source electrode, 16... ohmic contact layer, 17... drain electrode, 18... insulating layer, 19 ...Light blocking layer, 20... Insulating layer.

Claims (5)

Equipped with multiple pixels,
Each of the plurality of pixels includes a TFT (thin film transistor) and a light shielding layer that shields the TFT from light,
The TFT is
a gate electrode provided on the substrate;
a gate insulating film provided on the gate electrode;
a semiconductor layer provided on the gate insulating film;
including a source electrode and a drain electrode provided on the semiconductor layer,
the gate electrode is connected to a scanning line;
the source electrode is connected to a pixel electrode,
the drain electrode is connected to a signal line,
the width of the light shielding layer is wider than the width of the semiconductor layer; the source electrode is configured to cover one corner of the semiconductor layer;
The drain electrode is configured to cover one corner of the semiconductor layer. A display device. The display device according to claim 1, wherein the width of the gate electrode is narrower than the width of the semiconductor layer. The display device according to claim 1 , wherein the width of the gate electrode is narrower than the width of the light shielding layer. The source electrode is configured to cover two corners of the semiconductor layer,
The display device according to claim 1, wherein the drain electrode is configured to cover two corners of the semiconductor layer. The display device according to claim 1 , wherein the light shielding layer is electrically connected to a common electrode arranged opposite to the pixel electrode.