JP2024011770A - Imaging element, imaging apparatus and manufacturing method of imaging element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an imaging element, an imaging apparatus and a manufacturing method of the imaging element which can shorten the selection time required for one line in the time of image acquisition and acquire images in the number required for a moving image even when a pixel number significantly increases due to increase in an area of the imaging element.

SOLUTION: An imaging element includes: a substrate 10; a plurality of penetration electrodes (115) which vertically penetrate a prescribed position of the substrate 10; a pixel structure which is arranged on the substrate 10; and a wiring electrode (118) which is electrically connected to each desired pixel and is arranged so as to pass through a space between the pixels. The pixel structure is divided into each drive area 11 made of pixel groups including prescribed number of pixels. Each drive area 11 is configured such that the corresponding penetration electrode (115) is directly or indirectly electrically connected to each wiring electrode (118) for each drive area 11, and signal read-out of the pixels included in the drive area 11 is performed in parallel to each other.

SELECTED DRAWING: Figure 1

COPYRIGHT: (C)2024,JPO&INPIT

Description

The present invention relates to an imaging device that is advantageous for acquiring wide-viewing-angle images, particularly an imaging device with a large imaging area, an imaging device such as a surveillance camera equipped with the imaging device, and a method for manufacturing the imaging device. It is.

Current photographic systems generally use a configuration that combines a CMOS image sensor and a lens. In order to obtain high-definition and bright images using a CMOS image sensor, it is desirable to increase the size of the image sensor and to have a configuration that has a wide light-receiving area.
In order to create such a configuration, it is necessary to increase the size of the Si substrate and increase the number of pixels, but in general CMOS microfabrication, the manufacturing cost increases significantly as the area increases, and in particular, CMOS imaging In the device, the wiring is taken out from the periphery of the device, so if the number of pixels increases due to the enlargement of the area, the selection time for one line when reading out the signal becomes longer, making it difficult to produce a moving image. There was a problem that it became difficult to obtain the required number of images.

To address this problem, a conventional technique related to a tile-type large-area device that combines four CMOS image pickup devices is known (see Non-Patent Document 1 below).
In addition, in order to obtain wide viewing angle images using a large-area image sensor, a lens array consisting of multiple small lenses is used instead of a large and heavy wide-angle lens, and this lens array and CMOS image sensor are used. A combined imaging system is known (see Patent Documents 1 to 3 below).

Japanese Patent Application Publication No. 2001-61109 Japanese Patent Application Publication No. 2003-163938 Japanese Patent Application Publication No. 2005-167484

Hein Loijens et.al., "A 23 x 25.9cm2 RGB color CMOS Imager System for Digital Photography", IISW, R46, pp.289-292(2011)

However, depending on the conventional technology described in Non-Patent Document 1 mentioned above, in addition to the problem of missing pixels in adjacent areas between each CMOS image sensor, defects due to misalignment between each CMOS image sensor can be visually recognized. The problem is that it is easy to be attacked.
Furthermore, it is difficult to fundamentally solve the problems associated with the increase in the area of CMOS image pickup devices using the conventional techniques described in Patent Documents 1 to 3 mentioned above.

The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to shorten the selection time required for one line when reading out pixel signals even if the number of pixels increases significantly due to the enlargement of the area of the image sensor. An object of the present invention is to provide an imaging device, an imaging device, and a method for manufacturing the imaging device, which are capable of capturing the required number of images for a moving image.

In order to achieve the above object, an image sensor, an image sensor, and a method for manufacturing an image sensor according to the present invention have the following configuration.
That is, the image sensor of the present invention has the following characteristics:
In an image sensor that receives light from above and captures subject image information carried by the light,
A substrate and
a through electrode that vertically penetrates the substrate at a predetermined position of the substrate;
a pixel structure in which pixels including pixel electrodes and semiconductor elements are arranged in an array above the substrate;
a wiring electrode electrically connected to the desired pixels and arranged to pass between the pixels;
a photoelectric conversion film arranged above the pixel structure;
a counter electrode arranged above the photoelectric conversion film;
an imaging lens disposed above the counter electrode to form an image of the subject image information on the photoelectric conversion film;
The pixel structure is divided into drive areas each consisting of a pixel group including a desired number of the pixels,
The pixels included in each of the drive areas are read out in parallel with each other so that the corresponding through electrode is electrically connected to each of the wiring electrodes of each of the drive areas. It is characterized by being configured as follows.
Here, the above-mentioned "in parallel" does not necessarily mean that the pixel signal readout operations in all drive areas are performed synchronously, but at least one of the pixel signal readout operations in a plurality of drive areas. Any selection method may be used as long as the sections are performed overlappingly in mutually overlapping periods and, as a result, the selection time required for one line at the time of image acquisition can be shortened. The same applies to terms used in the method for manufacturing an image sensor described below.
Moreover, the above-mentioned "upward direction" is a convenient expression used to define the relative positional relationship of each part of the image sensor. Note that the same applies to terms used in the method for manufacturing an image sensor described below.
Furthermore, "so that the through electrodes are electrically connected" does not necessarily mean that the through electrodes and wiring electrodes are directly connected, but that the through electrodes and wiring electrodes are connected to other conductive members. This also includes cases where the connection is made indirectly through the Note that the same applies to terms used in the method for manufacturing an image sensor described below.

Further, the imaging lens may be composed of a lens array in which a plurality of lenses are arranged.
Furthermore, it is preferable that the pixels in the pixel structure are equally spaced due to the presence of the drive area.
Further, the imaging device of the present invention includes, for example, any one of the above-mentioned imaging elements, and the substrate is made of a flexible material, and at least a portion thereof is configured to have a curved shape. Alternatively, the imaging device of the present invention includes, for example, any of the above-mentioned imaging elements, the substrate is made of a flexible material, and the imaging device is configured to have a cylindrical shape as a whole. In this case, the imaging surface may be the inner surface or the outer surface of the cylinder, and is appropriately set depending on the application, and the imaging lens is preferably a lens array.
Further, in the imaging device of the present invention, for example, the substrate is formed of a flexible material and is configured to be accommodated in a wearable device. Also in this case, the imaging lens is preferably a lens array.

Further, the method for manufacturing an image sensor of the present invention includes:
In a method for manufacturing an image sensor that receives light from above and captures subject image information carried by the light,
a board placement process for placing the board;
a through electrode forming step of forming a through electrode that vertically penetrates the substrate at a predetermined position of the substrate;
a pixel structure forming step of arranging pixels including pixel electrodes and semiconductor elements in an array above the substrate to form a pixel structure;
a wiring electrode forming step in which a wiring electrode electrically connected to the desired pixel is arranged so as to pass between the pixels;
a photoelectric conversion film lamination step of laminating a photoelectric conversion film above the pixel structure;
a counter electrode lamination step of laminating a counter electrode above the photoelectric conversion film;
performing in this order an imaging lens arranging step of arranging an imaging lens above the counter electrode to form an image of the subject image information onto the photoelectric conversion film;
The pixel structure is divided into drive areas each consisting of a pixel group including a desired number of pixels, and the corresponding through electrode is electrically connected to each of the wiring electrodes in each drive area. , and each of the driving areas is characterized in that a pixel signal readout timing setting step of setting the readout timing of the pixel signal is performed in parallel with each other so that the pixels included in each of these drive areas are read out. It is.

According to the imaging device and the imaging device of the present invention, photoelectrically converted pixel signals are read out for each drive area, which is grouped into a small number of pixels, for all pixels, and in parallel to each other. Since it is configured to read out signals, even if the image sensor has a large area and the number of pixels has increased significantly, the selection time required for one line when reading out pixel signals can be shortened, and even if the image sensor has a large area and the number of pixels has increased significantly, it is possible to shorten the selection time required for one line when reading out pixel signals. It is possible to acquire the required number of images. Furthermore, by using the method for manufacturing an image sensor of the present invention, it is possible to manufacture an image sensor that can acquire the number of images required for a moving image even if the image sensor has a large area and the number of pixels has increased significantly. Can be done.

FIG. 2 is a schematic cross-sectional view showing the conceptual configuration of an image sensor according to the present invention, showing (a) an example using a large imaging lens, and (b) an example using a lens array as the imaging lens. be. 1 is a conceptual diagram showing an image sensor according to Embodiment 1 of the present invention. FIG. 2 is a conceptual diagram showing an image sensor according to Embodiment 2 of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS An image sensor, an image sensor, and a method for manufacturing an image sensor according to embodiments of the present invention will be described below with reference to the drawings. Note that FIGS. 1 to 3 are schematic diagrams to facilitate understanding of the arrangement of each component (actually, each component is stacked one on top of the other with no gaps left between each other).
First, the concept of the image sensor of the present invention will be briefly explained using FIG. Note that in the image sensor 1 in FIG. 1(a), the imaging lens consists of one large-diameter lens 13, whereas in the image sensor 1A in FIG. 1(b), the imaging lens consists of many small-diameter lenses vertically and horizontally It is composed of a lens array 13A arranged in the following manner. In addition, in the image sensor 1A, among other members, those corresponding to the members of the image sensor 1 (substrate 10, drive area 11, photoelectric conversion film 12) are indicated by adding A to the reference numerals attached to the members of the image sensor 1. It is represented by a symbol (substrate 10A, drive area 11A, photoelectric conversion film 12A).

<Concept of the image sensor of the present invention>
The key point of the configuration of the image sensor 1, 1A of the present invention is that all the pixels constituting the pixel array provided on the substrate 10, 10A are arranged in a plurality of pixels as shown in FIGS. The driving area 11 is divided into regions (drive areas 11), and the signal readout of each drive area 11, 11A is performed individually and in parallel.
By appropriately setting the number of pixels included in each drive area 11, 11A, sufficient selection time can be secured for each pixel or line, so the number of pixels of the image sensor 1, 1A can be increased. It also becomes possible to read out pixel signals at high speed. For example, by setting the number of pixels included in each drive area 11, 11A to be smaller, it is also possible to read out a moving image at a higher frequency in each drive area 11, 11A. For example, a response of 120 Hz or more can be easily achieved.
However, after the pixel signal readout process is performed, arithmetic processing such as image synthesis is required by a subsequent circuit.

That is, by constructing a signal readout pixel circuit for each drive area 11, 11A, similar to conventional CMOS sensors, organic imaging devices, etc., signals associated with incident light are transmitted in parallel to each drive area 11, 11A. It is possible to read them individually. They are converted pixel by pixel into image signals in the same way as in conventional image sensors, and finally can be converted into a single image that is stitched together using existing image processing. At this time, it becomes possible to control the frame rate by appropriately synchronizing signal readout between the drive areas 11 and 11A.

Furthermore, if images acquired by adjacent lenses of the lens array 13A overlap each other due to positional deviation, a higher resolution image can be obtained by performing simple arithmetic processing on each image. It is also possible to obtain For these image processes, an appropriate image processing method may be adopted depending on the images acquired in each drive area 11, 11A. Furthermore, since pixel signals are read out on the back surface via the through electrodes (115, 215), an IC or the like connected to the through electrodes (115, 215) can be attached to the back surface. Note that since the driving areas 11 and 11A are processed in parallel, the number of pixels can be relatively reduced, so it is also possible to increase the number of pixels.
There is no upper limit to the number of driving areas 11, 11A, and it is possible to construct an image sensor that is difficult to create with a conventional CMOS device, which is expressed by an extremely large area or extremely multilayered structure.

Furthermore, as the imaging lens, various lenses can be selected depending on the purpose, from a single lens 13 as shown in FIG. 1(a) to a lens array 13A as shown in FIG. 1(b). be. For this reason, for example, we have developed a wide range of systems, including imaging systems that use large-diameter lenses such as those used in astronomical telescopes, wide viewing angle imaging systems that use large wide-angle lenses, and even ultra-wide viewing angle imaging systems that use multiple lenses. Application to various cameras is possible.
In addition, since it can be applied to plastic substrates, a video system capable of 360-degree imaging can be configured with a single image sensor, making it possible to create a situation where multiple cameras are lined up to take pictures. This eliminates the need for complicated alignment between multiple cameras.
Hereinafter, the image sensor of the present invention will be specifically described using Embodiments 1 and 2.

<Image sensor>
◎Embodiment 1
As partially shown in FIG. 2, the image sensor 101 according to the first embodiment is an image sensor that receives light from above in the drawing and captures subject image information carried by the light. A substrate 110 in which a through electrode 115 is formed so as to penetrate in the vertical direction, and pixels 120 formed on this substrate 110 and consisting of a pixel electrode 116 and a semiconductor element 117 are arranged in an array in a vertical and horizontal direction. a pixel structure, a wiring electrode 118 electrically connected to a predetermined pixel 120 and arranged to pass between each pixel 120, and a photoelectric conversion film 112 arranged above the pixel structure. , a counter electrode 119 disposed above the photoelectric conversion film 112 , and a lens array 113 disposed above the counter electrode 119 for focusing object image information onto the photoelectric conversion film 112 .

Furthermore, the pixel structure is divided into drive areas 111 each consisting of a pixel group containing a predetermined number of pixels 120 (in FIG. 2, a plurality of pixels 120 included in a part of one drive area 111 are shown). ), each drive area 111 connects the pixels 120 included in each drive area 111 to each other so that the corresponding through electrode 115 is electrically connected to each of the wiring electrodes 118 of each drive area 111. They are configured to be read out in parallel (overlapping in time). Note that the through electrode 115 is connected to both the vertical wiring and the horizontal wiring shown in the figure. Note that since the number of wires varies depending on the pixel circuit, the number and arrangement of wires shown in FIGS. 2 and 3 may be changed as appropriate.

That is, since at least one through electrode 115 is assigned and connected to all wiring electrodes 118 (for example, gate wiring, reset wiring, power supply line, etc.) in the driving area 111, each pixel in the driving area 111 The pixel signals generated are taken out to the outside through wiring connected to the through electrodes 115 on the back side of the substrate 110.
Note that the driving areas 111 may all have the same size (containing the same number of pixels), or may have mutually different sizes (containing different numbers of pixels).

In this way, in the image sensor 101 of the first embodiment, the photoelectrically converted signals are read out for each drive area 111 that is grouped by an appropriately set number of pixels for all pixels 120. In addition, since these drive areas 111 are configured to read out pixel signals in parallel with each other, even if the image sensor 101 has a large area and the number of pixels has increased significantly, one line when reading out pixel signals The selection time required for the video can be shortened, and the number of images required for the video can be acquired.

Each member of the image sensor 101 according to the first embodiment described above will be described in more detail below.
One or more semiconductor elements 117 can be provided in each pixel 120. For example, in the case of a three-transistor type image sensor 101, the semiconductor element 117 is configured with a switching transistor, an amplification transistor, and a reset transistor, and a load transistor is further arranged outside the pixel 120, and a source follower circuit configured with this. The configuration is such that charge amplification can be performed by.

In addition, the load transistors forming the source follower circuit, each of which has charges formed for each readout signal line, are arranged on the back side of the substrate 110 and connected to the wiring electrodes 118 on the front side via the through electrodes 115. It can also be configured to be connected. On the other hand, by arranging the load transistor in the lower layer of the drive area 111, it is possible to arrange it on the surface of the substrate 110 without changing the arrangement of the pixels 120.
Note that, as the pixel structure, various pixel circuits applied to a normal CMOS image sensor can be used, regardless of the above-described configuration.

Further, the semiconductor element 117 may be a TFT, and if the TFT is formed of, for example, an oxide semiconductor, it can be formed over a large area even on a substrate made of plastic, which has lower heat resistance than glass. .
The through electrode 115 electrically connects the front side and the back side of the substrate 110, and may be made of metal, conductive material, etc., but the resistance should be as low as possible. is desirable.

◎Embodiment 2
Next, an image sensor according to the second embodiment will be described using FIG. 3. Note that there are many members common to the image sensor of Embodiment 1, so for the members of Embodiment 2 that correspond to the members of Embodiment 1, add 100 to the reference numerals given to the members of Embodiment 1 and use the same numbers as those of Embodiment 2. This shall be the code of the member.
A feature of the image sensor according to this embodiment is that an intermediate wiring layer 223 is provided on the substrate 210 to connect the through electrodes 215 and various wirings. This allows the diameter of the through-hole electrode 215 to be increased, making it easier to perform hole-drilling and electrode-forming processes on the substrate 210, and to increase the flatness of the surface on which the circuit is formed. Become.
The connection electrodes 221 and vias 222 constructed inside the intermediate wiring layer 223 can be freely formed using metals, conductive polymer materials, etc., but it is desirable that the resistance be as small as possible. .

The imaging lens may be a single large lens, a combination of multiple lenses, or a lens array with multiple small diameter lenses arranged vertically and horizontally within the device plane (see Figure 3, it is referred to as a lens array 213). In the case of a compound eye system using a lens array 213 as shown in FIG. 3, high resolution and wide viewing angle can be realized by combining images acquired by each lens. Furthermore, when the lens array 213 is applied, the size of each lens does not necessarily have to be the same. In addition, in the lens array 213, the spacing, number, arrangement, optical axis, material, etc. of each lens do not need to be constant, and can be freely selected depending on the image to be acquired, the angle of view, or the direction of the object to be photographed. and can be placed.

Further, in FIG. 3, since the lens array 213 is used, if one lens is arranged in correspondence with each drive area 211, one element image can be acquired in one drive area 211.
Further, below the lens array 213, it is also possible to form an aperture plate (a plate-like member with a through hole at a predetermined position) 225 or a partition wall as shown in FIG. 3 in correspondence with each lens. This allows each pixel to block light from adjacent lenses. Further, the structures such as the aperture plate 225 can also be arranged above the lens array 213.

It is also possible to use a flat lens such as a metalens or a Fresnel lens as an imaging lens or lens array, and thereby a thin imaging device can be constructed even with a large area.

Further, when obtaining different color information for each pixel, it is also possible to arrange a color filter, an ultraviolet cut filter, an infrared cut filter, etc. below the above-mentioned imaging lens or lens array.

The photoelectric conversion film 212 described above can be made of various materials as long as it is an organic film or an inorganic material such as Se (selenium) and has a photoelectric conversion function. For example, when using multiple organic films that are sensitive to each color (for example, the three primary colors of red, green, and blue), a color filter can be used by appropriately arranging organic films corresponding to each color for each pixel. It is possible to obtain color images without

Furthermore, by using a material that is sensitive to light other than visible light for the photoelectric conversion film 212, it is also possible to construct an infrared sensor, an ultraviolet sensor, or the like.
Further, as the photoelectric conversion film 212, it is possible to use a material that is a mixture of a plurality of materials. In addition, it is also possible to have a structure in which multiple organic films that are sensitive to each color (for example, the three primary colors of red, green, and blue) are laminated, and existing material structures can be used as necessary. be.

As the constituent material of the substrate 210, a material suitable for increasing the area is preferable, and for example, glass, plastic, rubber, or the like can be used. The front and back surfaces of the substrate 210 are preferably made as highly flat as possible so that wiring can be easily formed on the front and back surfaces.

<Imaging device>
Further, by using a flexible material such as plastic or rubber for the substrate 210, it is possible to form the image sensor into a curved shape. In this case, by using a lens array as an imaging lens, it becomes possible to efficiently acquire images in different directions. For example, by configuring the cylindrical image sensor 201, it is possible to configure an ultra-wide viewing angle camera that can capture images over the entire circumference of 360 degrees.
Further, by using a large-area image sensor and a lens array, it is also possible to apply the present invention to a wall-type image pickup device with an extremely large area.

Furthermore, by forming the image sensor 201 inside a cylindrical wall, it is possible to capture a 360-degree image of an object (for example, a work of art) placed inside the cylindrical wall. be. In this case, it is preferable to use the lens array 213 as the imaging lens.
Furthermore, by applying a flexible substrate, it is also possible to use it as a wearable camera worn on the arm, for example. In this case as well, it is preferable to use the lens array 213 as the imaging lens.
Note that in the image sensor of the present invention, only the basic configuration is shown, and for example, a layer not explained above, such as a transparent protective layer etc., may be provided as appropriate over the counter electrode 219. can.

<Manufacturing method of image sensor>
Hereinafter, a method for manufacturing an image sensor according to the present invention will be described using Embodiments 1 and 2 below.
Note that the method for manufacturing an image sensor according to Embodiment 1 is a method for manufacturing an image sensor according to Embodiment 1, and the method for manufacturing an image sensor according to Embodiment 2 is a method for manufacturing an image sensor according to Embodiment 2 above. However, each embodiment differs from each other only in part, so first, the method for manufacturing the image sensor according to Embodiment 1 will be explained using FIG. 2, and then the method for manufacturing the image sensor according to Embodiment 2 will be explained. Regarding the manufacturing method, the differences from the manufacturing method of the image sensor according to the first embodiment will be explained using FIG. 3.

◎Embodiment 1
(1) Step of forming a through electrode in the substrate In the method of this embodiment, first, the through electrode 115 is formed in the substrate 110.
As a technique for forming the through electrode 115 in this step, all existing manufacturing techniques can be applied.
For example, an opening is provided in the substrate 110 using a photolithography method or the like, and a through electrode 115 is formed in the opening using a plating method or the like.
Alternatively, for example, the substrate 110 with the through electrodes 115 may be formed by pouring the material of the substrate 110 while a columnar metal material serving as the through electrodes 115 is placed at a predetermined position.
Further, for example, it is also possible to apply a method of improving flatness by polishing the surface of the formed through electrode 115 after forming the through electrode 115.

(2) Step of forming wiring electrodes, semiconductor elements, and pixel electrodes On the substrate 110 on which the through electrodes 115 are formed, the wiring electrodes 118, the semiconductor elements 117, and the pixel electrodes 116 are formed in any order. Patterning of the wiring electrode 118, the semiconductor element 117, and the pixel electrode 116 can be freely selected from photolithography, a method of forming a film of various materials on a patterning mask by a desired method, and the like.
These wiring electrodes 118, semiconductor elements 117, and pixel electrodes 116 can be formed using various methods such as sputtering, vapor deposition, CVD, and various coating methods (spin coating, inkjet methods, various printing techniques, etc.) depending on the constituent materials. It is possible to apply the following film-forming technology.

(3) Step of forming a photoelectric conversion film Depending on the material constituting the photoelectric conversion film 112, sputtering method, vapor deposition method, CVD method, various coating methods (spin coating method, inkjet method, various printing techniques, etc.), etc. The photoelectric conversion film 112 is formed on the wiring electrode 118, the semiconductor element 117, and the pixel electrode 116 using a desired technique from among various film forming techniques.
Patterning is not particularly required to form the photoelectric conversion film 112, but when coloring is performed using organic films for red, green, and blue, for example, patterning may be performed using existing techniques such as photolithography. You can also do this.
Further, when the photoelectric conversion film 112 is formed using a vapor deposition method, patterning after film formation can be made unnecessary by applying mask vapor deposition or the like. Furthermore, in the case of a material that can be formed by a coating method, the coating material can be applied separately using an inkjet method or the like.

(4) Step of forming a counter electrode Various film forming techniques such as sputtering, vapor deposition, CVD, and various coating methods (spin coating, inkjet, various printing techniques, etc.) are applied on the photoelectric conversion film 112. A counter electrode 119 is formed using a desired technique. The counter electrode may have a single layer structure or a multilayer structure, and a film formation method suitable for each material can be applied.
Although patterning is not particularly required to form the counter electrode 119, the peripheral portion etc. can be patterned into a desired shape as necessary. For patterning, a desired film formation method can be applied depending on the material.

(5) Step of forming lenses A lens array 113 is formed on the formed counter electrode 119. The method for forming the lens array 113 can be the same as that for existing image sensors, and the lens array 113 is placed at an appropriate position depending on the design of the optical system. The same applies when a single lens is used instead of the lens array 113. It is also possible to form these lenses by laminating them on a predetermined member. In that case, it is possible to apply methods such as forming the lens into the shape of a lens using a three-dimensional printer, or laminating the materials that make up the lens on a predetermined member and then processing the surface into the lens shape. It is.
Furthermore, in the formation steps (1) to (5) above, heat treatment (annealing) can be performed as necessary.

By sequentially performing the above steps (1) to (5), the image sensor 101 according to the first embodiment can be created.
Thereby, even if the image sensor 101 has a large area and the number of pixels has increased significantly, it is possible to manufacture the image sensor 101 that can acquire the necessary number of images for a moving image.

◎Embodiment 2
Next, a method for manufacturing an image sensor according to Embodiment 2 will be explained using FIG. 3. In this explanation, as described above, only the parts that are different from the method for manufacturing an image sensor according to Embodiment 1 will be described. explain.
In the method for manufacturing an image sensor according to the second embodiment, the via 222 configured as shown in FIG. ing. That is, the via 222 having an outer diameter smaller than that of the through electrode 215 is used to facilitate connection to only one wiring electrode 218 (see FIG. 3(a)). Therefore, before (or after) performing the step (2) of forming wiring electrodes, semiconductor elements, and pixel electrodes in Embodiment 1, the following intermediate wiring layer (1') (or (2')) is formed. Perform the forming process.

(1') (or (2')) Step of forming an intermediate wiring layer In other words, a connection electrode 221 extending perpendicularly to the through electrode 215 is connected to the upper part of the through electrode 215, and a photolithography method or the like is used. Patterning is performed using the manufacturing method.
When forming the through electrode 215 by plating, it is also possible to form the connection electrode 221 by patterning the electrode left on the surface of the substrate 210.
Existing patterning techniques such as a method of patterning in advance using a mask vapor deposition method and a method of patterning by applying a printing technique may be appropriately selected depending on the material.

Further, for example, an insulating film is formed on the connection electrode 221, an opening is provided at the position of the wiring electrode 218 to be connected, and a via 222 made of a conductive material is formed. The via 222 may be formed from a part of the wiring electrode 218, but the various wiring electrodes 218 may be formed after the opening is filled with a conductive material in advance.
Note that various existing processing techniques can be applied to the formation and patterning of the conductive material.

In addition, in the method for manufacturing an image sensor according to the second embodiment, after performing the step of forming a counter electrode in the above (4), and before performing the step of forming a lens in the above (5), the following step (4' ) to form an aperture plate (and/or partition wall).
(4') Step of forming an aperture plate (partition wall) By performing this step (4') of forming an aperture plate 225, the aperture plate 225 is arranged between the counter electrode 219 and the lens array 213, and the aperture plate Each of the through holes 225 is arranged to correspond to each lens of the lens array 213. Thereby, it is possible to eliminate the risk of image quality deterioration due to light being taken in from adjacent lenses.

Although not shown in FIG. 3, the same effect can be achieved even if a partition is provided in place of or together with the aperture plate 225.
Furthermore, we have developed a method of forming and patterning a light-shielding material on top of the image sensor, a method of arranging a sheet with openings that match the pixels, and a method of arranging a sheet with a lattice-like wall structure at a desired position. It is also possible to appropriately select and apply a desired method from among the methods provided.
Note that the step (4') of forming the aperture plate (partition wall) can also be incorporated as one step in the method for manufacturing the image sensor according to the first embodiment described above.

The image pickup device of the present invention is not limited to that of the above-described embodiments, but can be modified to various other types. For example, in the above embodiment, the drive area is square and has a matrix shape, but the drive area can also have other shapes such as a rectangle or a honeycomb shape. be.
Further, in the above embodiment, it is assumed that the signal readout of a plurality of drive areas arranged in the scanning direction is performed in parallel, but the signal readout of some drive areas is performed in parallel. It is also possible to configure it so that it is done.

1, 1A, 101, 201 Image sensor 10, 10A, 110, 210 Substrate 11, 11A, 111 (part), 211 (part) Drive area 12, 12A, 112, 212 Photoelectric conversion film 13 Lens 13A, 113, 213 Lens array 115, 215 Through electrode 116, 216 Pixel electrode 117, 217 Semiconductor element (TFT)
118, 218 Wiring electrode 119, 219 Counter electrode 120, 220 Pixel 221 Connection electrode 222 Via 223 Intermediate wiring layer 225 Aperture plate

Claims (7)

In an image sensor that receives light from above and captures subject image information carried by the light,
A substrate and
a through electrode that vertically penetrates the substrate at a predetermined position of the substrate;
a pixel structure in which pixels including pixel electrodes and semiconductor elements are arranged in an array above the substrate;
a wiring electrode electrically connected to the desired pixels and arranged to pass between the pixels;
a photoelectric conversion film arranged above the pixel structure;
a counter electrode arranged above the photoelectric conversion film;
an imaging lens disposed above the counter electrode to form an image of the subject image information on the photoelectric conversion film;
The pixel structure is divided into drive areas each consisting of a pixel group including a desired number of the pixels,
The pixels included in each of the drive areas are read out in parallel with each other so that the corresponding through electrode is electrically connected to each of the wiring electrodes of each of the drive areas. An image sensor characterized by being configured as follows. 2. The image sensor according to claim 1, wherein the imaging lens comprises a lens array in which a plurality of lenses are arranged. 2. The image sensor according to claim 1, wherein the pixels in the pixel structure are equally spaced due to the presence of the drive area. An imaging device comprising the imaging device according to any one of claims 1 to 3, wherein the substrate is made of a flexible material and at least a portion thereof is configured to have a curved shape. . An imaging device comprising the imaging device according to claim 2 or 3, wherein the substrate is made of a flexible material and is configured to have a cylindrical shape as a whole. An imaging device comprising the imaging device according to claim 2 or 3, wherein the substrate is made of a flexible material and is configured to be housed in a wearable device. In a method for manufacturing an image sensor that receives light from above and captures subject image information carried by the light,
a board placement process for placing the board;
a through electrode forming step of forming a through electrode that vertically penetrates the substrate at a predetermined position of the substrate;
a pixel structure forming step of arranging pixels including pixel electrodes and semiconductor elements in an array above the substrate to form a pixel structure;
a wiring electrode forming step in which a wiring electrode electrically connected to the desired pixel is arranged so as to pass between the pixels;
a photoelectric conversion film lamination step of laminating a photoelectric conversion film above the pixel structure;
a counter electrode lamination step of laminating a counter electrode above the photoelectric conversion film;
performing in this order an imaging lens arranging step of arranging an imaging lens above the counter electrode to form an image of the subject image information onto the photoelectric conversion film;
The pixel structure is divided into drive areas each consisting of a pixel group including a desired number of pixels, and the corresponding through electrode is electrically connected to each of the wiring electrodes in each drive area. , and each of the drive areas performs a pixel signal readout timing setting step of setting the readout timing of the pixel signal so that the pixels included in each of the drive areas are read out in parallel with each other. Method of manufacturing elements.

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