JP2024002949A - Plasma processing device, ring, electrostatic chuck inspection method, and substrate processing method - Google Patents

Abstract

To provide a technique for generating a heat generation environment of an edge ring equivalent to that during plasma generation without generating plasma.SOLUTION: A plasma processing device includes a plasma processing chamber, a base disposed within the plasma processing chamber, an electrostatic chuck disposed on the top of the base and having a substrate support surface and a ring support surface around the substrate support surface, a ring disposed on the ring support surface, a heater layer disposed inside the ring or on a surface of the ring that does not contact the ring support surface, a power supply unit that supplies power to the heater layer, and a power source electrically connected to the power supply unit.SELECTED DRAWING: Figure 1

Description

Exemplary embodiments of the present disclosure relate to a plasma processing apparatus, a ring, an electrostatic chuck inspection method, and a substrate processing method.

A plasma processing apparatus is used in plasma processing of a substrate. The plasma processing apparatus includes a substrate support within a plasma processing chamber. The substrate support has a base and an electrostatic chuck that holds the substrate. An edge ring is placed on the electrostatic chuck so as to surround the substrate. One type of such a plasma processing apparatus is described in Patent Document 1. The temperature of the edge ring changes due to heat input from the plasma in the plasma processing space, and various temperature distributions occur depending on the shape of the electrostatic chuck and the like.

JP 2022-027459 Publication

The present disclosure provides a technique for generating a heat generation environment of an edge ring equivalent to that during plasma generation without generating plasma.

According to one aspect of the present disclosure, a plasma processing chamber, a base disposed in the plasma processing chamber, a substrate support surface and a ring support disposed on the base and surrounding the substrate support surface. an electrostatic chuck having a surface, a ring disposed on the ring support surface, a heater layer disposed inside the ring or on a surface of the ring not in contact with the ring support surface, and supplying power to the heater layer. A plasma processing apparatus is provided, which includes a power feeding section and a power source electrically connected to the power feeding section.

The present disclosure provides a technique for generating a heat generation environment of an edge ring equivalent to that during plasma generation without generating plasma.

FIG. 1 is a diagram schematically illustrating a substrate support according to one exemplary embodiment of the present disclosure. FIG. 2 is a top view schematically illustrating an edge ring according to one exemplary embodiment of the present disclosure. FIG. 3 is a diagram schematically illustrating a substrate support according to one exemplary embodiment of the present disclosure. FIG. 4 is a top view schematically illustrating an edge ring according to one exemplary embodiment of the present disclosure. FIG. 5 is a diagram schematically illustrating a substrate support according to one exemplary embodiment of the present disclosure. FIG. 6 is a top view schematically illustrating an edge ring according to one exemplary embodiment of the present disclosure. FIG. 7 is a diagram schematically illustrating a substrate support according to one exemplary embodiment of the present disclosure. FIG. 8 is a schematic cross-sectional view of an example plasma processing apparatus having one example embodiment of the present disclosure. FIG. 9 is a flow diagram illustrating processing using an example edge ring according to one example embodiment of the present disclosure. FIG. 10 is a flow diagram illustrating processing using an example edge ring according to one example embodiment of the present disclosure. FIG. 11 is a diagram illustrating powering an edge ring according to one exemplary embodiment of the present disclosure. FIG. 12 is a diagram illustrating a variation of an edge ring according to one exemplary embodiment of the present disclosure.

Hereinafter, embodiments for implementing the present disclosure will be described with reference to the drawings. Note that, in this specification and the drawings, substantially the same configurations are given the same reference numerals to omit redundant explanation. Note that in order to facilitate understanding, the scale of each part in the drawings may be different from the actual scale. In parallel, perpendicular, perpendicular, horizontal, perpendicular, up and down, left and right directions, deviations are allowed to an extent that does not impair the effects of the embodiment. The shape of the corner is not limited to a right angle, but may be rounded. Parallel, right angle, perpendicular, horizontal, and perpendicular may include substantially parallel, substantially perpendicular, substantially orthogonal, substantially horizontal, and substantially perpendicular.

≪First embodiment≫
In one exemplary embodiment of the present disclosure, a plasma processing apparatus is provided. The plasma processing apparatus includes a plasma processing chamber, a base disposed in the plasma processing chamber, an electrostatic chuck disposed above the base and having a substrate support surface and an edge ring support surface, and an electrostatic chuck disposed on the base and having a substrate support surface and an edge ring support surface. a supported edge ring, at least one heater electrode layer disposed within or on the edge ring, a power supply terminal electrically connected to the at least one heater electrode layer, and electrically connected to the power supply terminal. and a power source.

According to one exemplary embodiment of the present disclosure, it is possible to create a heating environment of the edge ring equivalent to that during plasma generation without generating plasma. This makes it possible to easily measure the temperature distribution of the edge ring during plasma generation.

Hereinafter, one exemplary embodiment of the present disclosure will be described with reference to FIGS. 1 and 2.

In one exemplary embodiment, the substrate support comprises a base 1 . The base 1 is made of a conductive material such as aluminum and has a substantially disk shape.

The substrate support further includes an electrostatic chuck 2 on the base 1. The base 1 and the electrostatic chuck 2 are bonded together by a bonding layer 3. The bonding layer 3 is made of a material having plasma resistance and heat resistance. For the bonding layer 3, for example, acrylic resin, silicone (silicone resin), epoxy resin, etc. can be used.

The electrostatic chuck 2 is formed by sintering or spraying a plate-shaped insulating material (eg, ceramics). The electrostatic chuck 2 has a central region 21 and an annular region 22 . The annular region 22 surrounds the central region 21 in plan view. A substrate (not shown) is placed on the central region 21 , and the edge ring 6 is placed on the annular region 22 so as to surround the substrate on the central region 21 . The electrostatic chuck 2 has an electrode layer 4 inside.

The electrode layer 4 is made of a conductive material. Power from an AC power source or a DC power source is applied to the electrode layer 4 . The electrostatic force generated thereby attracts and holds the substrate in the central region 21 . Further, the electrostatic chuck 2 has an electrode layer 5 inside. The electrode layer 5 is made of a conductive material. Power from an AC power source or a DC power source is applied to the electrode layer 5 . The electrostatic force generated thereby attracts and holds the edge ring 6 on the annular region 22. Note that in this embodiment, the substrate does not need to be placed on the central region 21.

In the examples shown in FIGS. 1 and 2, the substrate and the edge ring 6 are attracted and held by the electrostatic chuck 2 by electrostatic force, but the invention is not limited to this. It may be held by an adsorption sheet without using electrostatic force.

The edge ring 6 is made of semiconductor (for example, silicon), ceramics (for example, silicon carbide), metal, or the like. The thickness of the edge ring 6 may be, for example, 10 mm or less. Further, the thickness of the edge ring 6 may be, for example, 2 mm or less. The edge ring 6 includes a heater electrode layer 7 (heater layer) therein. The heater electrode layer 7 is made of, for example, tungsten, aluminum, or titanium.

FIG. 2 is a top view of the heater electrode layer 7. The heater electrode layer 7 includes a terminal 71 and a terminal 72. The terminals 71 and 72 extend from the front or back surface of the edge ring 6 to the heater electrode layer 7. One of the terminals 71 and 72 is a positive terminal, and the other is a negative terminal. Power from an AC power source or a DC power source is applied between the terminal 71 and the terminal 72.

FIG. 11 is a diagram illustrating the supply of power to the heater electrode layer 7. A power source 18 is connected to the heater electrode layer 7 via a connecting terminal 17 . The connection terminal 17 is connected to a terminal 71 and a terminal 72 on the heater electrode layer 7 . Power source 18 is an AC power source or a DC power source. Power supply 18 supplies power to heater electrode layer 7 . Note that each of the terminals 71 and 72 is an example of a power supply unit that supplies power to the heater electrode layer 7 (heater layer).

By applying electric power to the heater electrode layer 7, the heater electrode layer 7 heats the edge ring 6. In the example of FIG. 2, the heater electrode layer 7 is arranged in an arc shape from the terminal 71 to the folded portion 73 along the outer circumferential side of the edge ring. The heater electrode layer 7 is arranged in an arc shape from the folded part 73 to the folded part 74 along the inner periphery of the edge ring, and arranged in an arc shape from the folded part 74 to the terminal 72 along the outer periphery of the edge ring. .

In this embodiment, since the edge ring 6 is provided with the heater electrode layer 7, it is possible to create a heat generation environment of the edge ring 6 equivalent to that during plasma generation without generating plasma. This makes it possible to easily measure the temperature distribution of the edge ring during plasma generation. Furthermore, since the heater electrode layer 7 is directly controlled, it is possible to measure the temperature distribution faster than during plasma generation. The temperature distribution of the edge ring 6 is measured using, for example, a thermo camera provided above the edge ring 6.

Note that the temperature distribution of the edge ring 6 may be measured in an atmospheric environment or in a vacuum environment. Furthermore, in the case of a vacuum environment, the temperature distribution of the edge ring 6 may be measured during plasma generation.

In the examples shown in FIGS. 1 and 2, the heater electrode layer 7 is provided within the edge ring 6, but the present invention is not limited thereto. The heater electrode layer 7 may be placed on the edge ring 6. For example, the heater electrode layer 7 may be placed inside an insulating layer provided on the edge ring 6. Further, the heater electrode layer 7 may be placed on the surface of the edge ring 6 that does not contact the annular region 22 that is the ring support surface, or it may be placed on the surface of the edge ring 6 that is in contact with the annular region 22 that is the ring support surface. You may. In addition, when the heater electrode layer 7 is arranged on the surface of the edge ring 6 in contact with the annular region 22 that is the ring support surface, the heater electrode layer 7 is placed on the inner and outer peripheries of the heater between the upper surface of the annular region 22 and the lower surface of the edge ring 6. An adhesive layer may be provided for fixation.

In the example of FIGS. 1 and 2, the terminals 71 and 72 are not provided above the annular region 22 of the electrostatic chuck 2. In this case, power is applied to the terminals 71 and 72 from an AC power source or a DC power source provided outside the substrate supporter. Therefore, it is possible to measure the temperature distribution of the edge ring 6 without generating a temperature singularity in the annular region 22 of the electrostatic chuck 2 due to the influence of the terminals 71 and 72.

In the example of FIGS. 1 and 2, the terminals 71 and 72 are not provided above the annular region 22 of the electrostatic chuck 2; It may be provided above. In this case, it becomes possible to apply power from an AC power source or a DC power source to the terminals 71 and 72 via wiring within the electrostatic chuck.

In the example of FIGS. 1 and 2, the outer diameter of the edge ring 6 is larger than the outer diameter of the annular region 22, but the present invention is not limited thereto. The outer diameter of the edge ring 6 may be the same as the outer diameter of the annular region 22. Further, the outer diameter of the edge ring 6 may be smaller than the outer diameter of the annular region 22.

In addition, as shown in FIG. 12, the edge ring 6 may be equipped with the adsorption electrode 8 on the upper part of the surface which contacts the annular area 22 which is a ring support surface, for example. Further, the edge ring 6 may be provided with a sprayed ceramic film on the surface that contacts the annular region 22, which is the ring support surface, for example. In addition, when the heater electrode layer 7 is arranged on the surface of the edge ring 6 in contact with the annular region 22 that is the ring support surface, an adsorption electrode 8 may be provided and the heater electrode layer 7 may be fixed by electrostatic adsorption.

≪Second embodiment≫
Another exemplary embodiment of the present disclosure will be described below with reference to FIGS. 3 and 4. Note that elements having substantially the same functional configurations as those in FIGS. 1 and 2 are designated by the same reference numerals and redundant explanation will be omitted.

In the example of FIGS. 3 and 4, the heater electrode layer 7 is divided into three parts in the circumferential direction by a heater electrode layer 741, a heater electrode layer 742, and a heater electrode layer 743. The heater electrode layer 741 includes a terminal 7411 and a terminal 7412. The heater electrode layer 742 includes a terminal 7421 and a terminal 7422. The heater electrode layer 743 includes a terminal 7431 and a terminal 7432. In this embodiment, the heater electrode layer 7 is divided into three parts in the circumferential direction by the heater electrode layer 741, the heater electrode layer 742, and the heater electrode layer 743. This allows for more detailed direct control.

In addition, in the example of FIG. 3 and FIG. 4, the heater electrode layer 7 is divided into three in the circumferential direction by the heater electrode layer 741, the heater electrode layer 742, and the heater electrode layer 743, but it is limited to this. It's not a thing. The heater electrode layer 7 may be divided into two, or may be divided into four or more.

Further, in the examples of FIGS. 3 and 4, the heater electrode layer 741, the heater electrode layer 742, and the heater electrode layer 743 are arranged at equal intervals in the circumferential direction, but they may be arranged at unequal intervals.

≪Third embodiment≫
Another exemplary embodiment of the present disclosure will be described below with reference to FIGS. 5 and 6. Note that elements having substantially the same functional configurations as those in FIGS. 1 and 2 are designated by the same reference numerals and redundant explanation will be omitted.

In the example of FIGS. 5 and 6, the heater electrode layer 7 is divided into three parts in the radial direction by an inner heater electrode layer 751, a center heater electrode layer 752, and an outer heater electrode layer 753. The inner heater electrode layer 751 includes a terminal 7511 and a terminal 7512. The central heater electrode layer 752 includes a terminal 7521 and a terminal 7522.

The outer heater electrode layer 753 includes a terminal 7531 and a terminal 7532. In this embodiment, the heater electrode layer 7 is divided into three parts in the radial direction by an inner heater electrode layer 751, a central heater electrode layer 752, and an outer heater electrode layer 753. It becomes possible to directly control each area in more detail.

In the examples of FIGS. 5 and 6, the heater electrode layer 7 is divided into three parts in the radial direction by an inner heater electrode layer 751, a central heater electrode layer 752, and an outer heater electrode layer 753. It is not limited. The heater electrode layer 7 may be divided into two in the radial direction, or may be divided into four or more in the radial direction.

Further, in the examples of FIGS. 5 and 6, the inner heater electrode layer 751, the center heater electrode layer 752, and the outer heater electrode layer 753 are arranged concentrically, but they do not have to be arranged concentrically.

≪Fourth embodiment≫
Hereinafter, a modification of the exemplary embodiment of FIGS. 5 and 6 will be described with reference to FIG. 7. Note that elements having substantially the same functional configuration as those in FIGS. 5 and 6 are designated by the same reference numerals, and redundant explanation will be omitted.

In the example of FIG. 7, in the heater electrode layer 7, an inner heater electrode layer 751, a center heater electrode layer 752, and an outer heater electrode layer 753 are arranged at different heights. In the example of FIG. 7, the inner heater electrode layer 751 is placed at the highest position, and the outer heater electrode layer 753 is placed at the lowest position. The central heater electrode layer 752 is arranged at a height between the inner heater electrode layer 751 and the outer heater electrode layer 753. In this modification, since the inner heater electrode layer 751, the center heater electrode layer 752, and the outer heater electrode layer 753 are arranged at different heights, it is possible to arbitrarily adjust the value of the parasitic capacitance generated in each electrode layer. becomes possible. Therefore, when measuring the temperature distribution of the edge ring 6 during plasma generation, it is possible to optimize the plasma sheath shape.

In the example of FIG. 7, the central heater electrode layer 752 is arranged at a height between the inner heater electrode layer 751 and the outer heater electrode layer 753, but the present invention is not limited thereto. The central heater electrode layer 752 may be placed at the highest position or at the lowest position. The same applies to the inner heater electrode layer 751 and the outer heater electrode layer 753.

Note that the heater electrode layer 741, the heater electrode layer 742, and the heater electrode layer 743 in FIGS. 3 and 4 may also be arranged at different heights.

<Plasma treatment system>
An example of the configuration of the plasma processing system will be described below. FIG. 8 is a schematic cross-sectional view of an example plasma processing apparatus having one example embodiment of the present disclosure.

The plasma processing system includes a capacitively coupled plasma processing apparatus 101 and a control section 102. Capacitively coupled plasma processing apparatus 101 includes a plasma processing chamber 110, a gas supply section 120, a power supply 130, and an exhaust system 140. Further, the plasma processing apparatus 101 includes a substrate support section 114 and a gas introduction section. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 110. The gas introduction section includes a shower head 113. Substrate support 114 is located within plasma processing chamber 110 . The shower head 113 is arranged above the substrate support section 114. In one embodiment, showerhead 113 forms at least a portion of the ceiling of plasma processing chamber 110. The plasma processing chamber 110 has a plasma processing space 110s defined by a shower head 113, a side wall 110a of the plasma processing chamber 110, and a substrate support 114. The plasma processing chamber 110 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 110s and at least one gas exhaust port for discharging gas from the plasma processing space. Side wall 110a is grounded. The shower head 113 and the substrate support 114 are electrically insulated from the plasma processing chamber 110 housing.

The substrate support part 114 includes a main body part 111 and a ring assembly 112. The main body 111 includes a central region (substrate supporting surface) 111a (corresponding to the central region 21 in FIG. 1, etc.) for supporting a substrate (wafer) W, and an annular region (ring supporting surface) for supporting a ring assembly 112. ) 111b (corresponding to the annular region 22 in FIG. 1 etc.). The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in plan view. The substrate W is placed on the central region 111a of the main body 111, and the ring assembly 112 is placed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. In one embodiment, body portion 111 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. An electrostatic chuck is placed on the base. The top surface of the electrostatic chuck has a substrate support surface 111a. Ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Although not shown, the substrate support unit 114 may include a temperature control module configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the channels. Further, the substrate support section 114 may include a heat transfer gas supply section configured to supply heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

The showerhead 113 is configured to introduce at least one processing gas from the gas supply 120 into the plasma processing space 110s. The shower head 113 has at least one gas supply port 113a, at least one gas diffusion chamber 113b, and a plurality of gas introduction ports 113c. The processing gas supplied to the gas supply port 113a passes through the gas diffusion chamber 113b and is introduced into the plasma processing space 110s from the plurality of gas introduction ports 113c. Further, the shower head 113 includes a conductive member. The conductive member of showerhead 113 functions as an upper electrode. In addition to the shower head 113, the gas introduction section may include one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 110a.

Gas supply 120 may include at least one gas source 121 and at least one flow controller 122. In one embodiment, the gas supply 120 is configured to supply at least one process gas from a respective gas source 121 to the showerhead 113 via a respective flow controller 122 . Each flow controller 122 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, gas supply 120 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one process gas.

Power source 130 includes an RF power source 131 coupled to plasma processing chamber 110 via at least one impedance matching circuit. RF power source 131 is configured to provide at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive member of substrate support 114 and/or the conductive member of showerhead 113. be done. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 110s. Accordingly, RF power source 131 may function as at least part of a plasma generation unit configured to generate a plasma from one or more process gases in plasma processing chamber 110. Further, by supplying a bias RF signal to the conductive member of the substrate support section 114, a bias potential is generated on the substrate W, and ion components in the formed plasma can be drawn into the substrate W.

In one embodiment, the RF power supply 131 includes a first RF generator 131a and a second RF generator 131b. The first RF generation section 131a is coupled to the conductive member of the substrate support section 114 and/or the conductive member of the shower head 113 via at least one impedance matching circuit, and is connected to a source RF signal for plasma generation (source RF configured to generate electricity). In one embodiment, the source RF signal has a frequency within the range of 13 MHz to 150 MHz. In one embodiment, the first RF generator 131a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are provided to the conductive member of the substrate support 114 and/or the conductive member of the showerhead 113. The second RF generator 131b is coupled to the conductive member of the substrate support 114 via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 400kHz to 13.56MHz. In one embodiment, the second RF generator 131b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are provided to the conductive members of the substrate support 114. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

Power source 130 may also include a DC power source 132 coupled to plasma processing chamber 110. The DC power supply 132 includes a first DC generation section 132a and a second DC generation section 132b. In one embodiment, the first DC generator 132a is connected to the conductive member of the substrate support 114 and configured to generate the first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support 114. In one embodiment, the first DC signal may be applied to another electrode, such as an electrode in an electrostatic chuck. In one embodiment, the second DC generator 132b is connected to a conductive member of the showerhead 113 and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the showerhead 113. In various embodiments, at least one of the first and second DC signals may be pulsed. Note that the first and second DC generation units 132a and 132b may be provided in addition to the RF power source 131, or the first DC generation unit 132a may be provided in place of the second RF generation unit 131b. good.

The exhaust system 140 may be connected to a gas outlet 110e provided at the bottom of the plasma processing chamber 110, for example. Evacuation system 140 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 110s is adjusted by the pressure adjustment valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

Control unit 102 processes computer-executable instructions that cause plasma processing apparatus 101 to perform various steps described in this disclosure. Control unit 102 may be configured to control each element of plasma processing apparatus 101 to perform the various steps described herein. In one embodiment, part or all of the control unit 102 may be included in the plasma processing apparatus 101. The control unit 102 may include, for example, a computer 102a. The computer 102a may include, for example, a processing unit (CPU: Central Processing Unit) 102a1, a storage unit 102a2, and a communication interface 102a3. The processing unit 102a1 may be configured to perform various control operations based on programs stored in the storage unit 102a2. The storage unit 102a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 102a3 may communicate with the plasma processing apparatus 101 via a communication line such as a LAN (Local Area Network).

<Processing using edge ring according to exemplary embodiment>
Processing using an edge ring according to one exemplary embodiment of the present disclosure will be described.

(Processing 1)
A process (inspection method) for inspecting an electrostatic chuck using the edge ring according to this embodiment will be described. FIG. 9 is a flow diagram illustrating a process for inspecting an electrostatic chuck using an example edge ring according to an example embodiment of the present disclosure. Here, an example will be described in which it is determined whether or not the thermal resistance of the edge ring mounting surface of an electrostatic chuck satisfies a standard using the edge ring according to the present embodiment.

First, an electrostatic chuck to be inspected is mounted on an inspection device that inspects the electrostatic chuck (step S10). Then, the edge ring according to this embodiment is installed on the electrostatic chuck (step S20). Next, by applying a predetermined power to the edge ring, the edge ring is heated at a predetermined output (step S30). Next, the temperature of the edge ring is measured (step S40). The temperature of the edge ring is measured using, for example, a thermo camera installed above the edge ring. Based on the result of measuring the temperature of the edge ring, the thermal resistance of the edge ring mounting surface of the electrostatic chuck is calculated (step S50).

It is determined whether the calculated thermal resistance of the edge ring mounting surface of the electrostatic chuck satisfies a predetermined standard (step S60). If the calculated thermal resistance of the edge ring mounting surface of the electrostatic chuck satisfies a predetermined standard (YES in step S60), the inspected electrostatic chuck is shipped (step S70). If the calculated thermal resistance of the edge ring mounting surface of the electrostatic chuck does not meet a predetermined standard (NO in step S60), additional work and corrections are performed on the electrostatic chuck (step S80). After additional machining and corrections have been made to the electrostatic chuck, the process returns to step S10 and repeats the process.

By inspecting an electrostatic chuck using the edge ring according to this embodiment, the electrostatic chuck can be inspected by creating a heat generation environment of the edge ring equivalent to that during plasma generation without generating plasma.

(Processing 2)
Substrate processing (substrate processing method) using the edge ring according to this embodiment will be described. FIG. 10 is a flow diagram illustrating substrate processing using an example edge ring according to one example embodiment of the present disclosure. Here, an example in which plasma etching processing is performed using the edge ring according to this embodiment will be described.

First, an electrostatic chuck is mounted on a substrate processing apparatus that processes a substrate (step S110). Then, the edge ring according to this embodiment is installed on the electrostatic chuck (step S120). Next, a substrate to be processed is placed on the electrostatic chuck (step S130). Then, the edge ring and the substrate are heated to a predetermined temperature (step S140). Specifically, by applying a predetermined power to the edge ring, the edge ring is heated with a predetermined output. The substrate is heated by a temperature control module provided on the substrate support.

Next, a processing gas is introduced into the processing chamber (step S150). Then, high frequency power is supplied from the upper electrode or the lower electrode to generate plasma and perform plasma etching (step S160). When the plasma etching process is completed (step S170), the substrate is carried out (step S180).

By processing a substrate using the edge ring according to this embodiment, the substrate can be processed while controlling the temperature distribution in the vicinity of the edge ring.

The plasma processing apparatus according to the present embodiment disclosed this time should be considered to be illustrative in all respects and not restrictive. The embodiments described above can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the plurality of embodiments described above may be configured in other ways without being inconsistent, and may be combined without being inconsistent.

The embodiments disclosed above include, for example, the following aspects.

(Additional note 1)
a plasma processing chamber;
a base disposed within the plasma processing chamber;
an electrostatic chuck disposed on the top of the base and having a substrate support surface and a ring support surface around the substrate support surface;
a ring disposed on the ring support surface;
a heater layer disposed inside the ring or on a surface of the ring that does not contact the ring support surface;
a power supply unit that supplies power to the heater layer;
a power source electrically connected to the power feeding unit;
Plasma processing equipment.

(Additional note 2)
comprising a plurality of the heater layers;
The plasma processing apparatus according to Supplementary Note 1.

(Additional note 3)
The plurality of heater layers are provided concentrically,
The plasma processing apparatus according to appendix 2.

(Additional note 4)
The plurality of heater layers are arranged in a circumferential direction,
The plasma processing apparatus according to appendix 2.

(Appendix 5)
Each of the plurality of heater layers has a different distance from a surface in contact with the ring support surface.
The plasma processing apparatus according to appendix 2.

(Appendix 6)
An adsorption electrode is provided on the upper surface of the ring that contacts the ring support surface.
The plasma processing apparatus according to any one of Supplementary notes 1 to 5.

(Appendix 7)
a sprayed film is provided on a surface of the ring that contacts the ring support surface;
The plasma processing apparatus according to any one of Supplementary notes 1 to 6.

(Appendix 8)
The ring is made of metal.
The plasma processing apparatus according to any one of Supplementary Notes 1 to 7.

(Appendix 9)
The ring is made of ceramics.
The plasma processing apparatus according to any one of Supplementary Notes 1 to 7.

(Appendix 10)
The ring is formed of a semiconductor,
The plasma processing apparatus according to any one of Supplementary Notes 1 to 7.

(Appendix 11)
The ring is formed of either silicon or silicon carbide,
The plasma processing apparatus according to appendix 10.

(Appendix 12)
The thickness of the ring is 10 mm or less,
The plasma processing apparatus according to any one of Supplementary notes 1 to 11.

(Appendix 13)
A ring disposed on a ring support surface around a substrate support surface of an electrostatic chuck,
The ring is
a heater layer disposed inside the ring or on a surface that does not contact the ring support surface;
a power supply unit that supplies power to the heater layer;
ring.

(Appendix 14)
comprising a plurality of the heater layers;
The ring described in Appendix 13.

(Appendix 15)
The plurality of heater layers are provided concentrically,
The ring described in Appendix 14.

(Appendix 16)
The plurality of heater layers are arranged in a circumferential direction,
The ring described in Appendix 14.

(Appendix 17)
Each of the plurality of heater layers has a different distance from a surface in contact with the ring support surface.
The ring described in Appendix 14.

(Appendix 18)
An adsorption electrode is provided on the top of the surface that contacts the ring support surface.
The ring according to any one of Supplementary notes 13 to 17.

(Appendix 19)
a sprayed coating is provided on a surface that contacts the ring support surface;
The ring according to any one of Supplementary notes 13 to 18.

(Additional note 20)
made of metal,
The ring according to any one of appendices 13 to 19.

(Additional note 21)
formed from ceramics,
The ring according to any one of appendices 13 to 19.

(Additional note 22)
formed by semiconductor,
The ring according to any one of appendices 13 to 19.

(Additional note 23)
formed from either silicon or silicon carbide,
The ring described in Appendix 22.

(Additional note 24)
The thickness is 10 mm or less,
The ring according to any one of Supplementary notes 13 to 23.

(Additional note 25)
placing a ring on the ring support surface of an electrostatic chuck having a substrate support surface and a ring support surface around the substrate support surface;
heating a heater layer disposed inside the ring or on a surface of the ring not in contact with the ring support surface by supplying power;
measuring the temperature of the ring;
including,
Inspection method for electrostatic chuck.

(Additional note 26)
placing a substrate on the substrate support surface of an electrostatic chuck having a substrate support surface and a ring support surface around the substrate support surface;
placing a ring on the ring support surface;
heating a heater layer disposed inside the ring or on a surface of the ring not in contact with the ring support surface by supplying power;
processing the substrate;
including,
Substrate processing method.

1 Base 2 Electrostatic chuck 3 Bonding layers 4, 5 Electrode layer 6 Edge ring 7 Heater electrode layer 17 Connection terminal 18 Power source 21 Central region 22 Annular region 71, 72 Terminals 73, 74 Folded portions 741, 742, 743 Heater electrode layer 7411, 7412, 7421, 7422, 7431, 7432 Terminal 751 Inner heater electrode layer 752 Center heater electrode layer 753 Outer heater electrode layer 7511, 7512, 7521, 7522, 7531, 7532 Terminal W Substrate (wafer)

Claims (26)

a plasma processing chamber;
a base disposed within the plasma processing chamber;
an electrostatic chuck disposed on the top of the base and having a substrate support surface and a ring support surface around the substrate support surface;
a ring disposed on the ring support surface;
a heater layer disposed inside the ring or on a surface of the ring that does not contact the ring support surface;
a power supply unit that supplies power to the heater layer;
a power source electrically connected to the power feeding unit;
Plasma processing equipment. comprising a plurality of the heater layers;
The plasma processing apparatus according to claim 1. The plurality of heater layers are provided concentrically,
The plasma processing apparatus according to claim 2. The plurality of heater layers are arranged in a circumferential direction,
The plasma processing apparatus according to claim 2. Each of the plurality of heater layers has a different distance from a surface in contact with the ring support surface.
The plasma processing apparatus according to claim 2. An adsorption electrode is provided on the upper surface of the ring that contacts the ring support surface.
The plasma processing apparatus according to any one of claims 1 to 5. a sprayed film is provided on a surface of the ring that contacts the ring support surface;
The plasma processing apparatus according to any one of claims 1 to 5. The ring is made of metal.
The plasma processing apparatus according to any one of claims 1 to 5. The ring is made of ceramics.
The plasma processing apparatus according to any one of claims 1 to 5. The ring is formed of a semiconductor,
The plasma processing apparatus according to any one of claims 1 to 5. The ring is formed of either silicon or silicon carbide,
The plasma processing apparatus according to claim 10. The thickness of the ring is 10 mm or less,
The plasma processing apparatus according to any one of claims 1 to 5. A ring disposed on a ring support surface around a substrate support surface of an electrostatic chuck,
The ring is
a heater layer disposed inside the ring or on a surface that does not contact the ring support surface;
a power supply unit that supplies power to the heater layer;
ring. comprising a plurality of the heater layers;
A ring according to claim 13. The plurality of heater layers are provided concentrically,
Ring according to claim 14. The plurality of heater layers are arranged in a circumferential direction,
Ring according to claim 14. Each of the plurality of heater layers has a different distance from a surface in contact with the ring support surface.
Ring according to claim 14. An adsorption electrode is provided on the top of the surface that contacts the ring support surface.
A ring according to any one of claims 13 to 17. a sprayed coating is provided on a surface that contacts the ring support surface;
A ring according to any one of claims 13 to 17. made of metal,
A ring according to any one of claims 13 to 17. formed from ceramics,
A ring according to any one of claims 13 to 17. formed by semiconductor,
A ring according to any one of claims 13 to 17. formed from either silicon or silicon carbide,
A ring according to claim 22. The thickness is 10 mm or less,
A ring according to any one of claims 13 to 17. placing a ring on the ring support surface of an electrostatic chuck having a substrate support surface and a ring support surface around the substrate support surface;
heating a heater layer disposed inside the ring or on a surface of the ring not in contact with the ring support surface by supplying power;
measuring the temperature of the ring;
including,
Inspection method for electrostatic chuck. placing a substrate on the substrate support surface of an electrostatic chuck having a substrate support surface and a ring support surface around the substrate support surface;
placing a ring on the ring support surface;
heating a heater layer disposed inside the ring or on a surface of the ring not in contact with the ring support surface by supplying power;
processing the substrate;
including,
Substrate processing method.

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