JP2024000263A - Substrate processing apparatus, plasma processing apparatus, and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique for optimizing a temperature in a substrate surface.

SOLUTION: A substrate processing apparatus comprises: a chamber; and a substrate supporting part that is arranged in the chamber, and includes a substrate support surface. The substrate supporting part contains a substrate temperature member. The substrate temperature member is connected to the substrate supporting part that includes a first coolant channel formed to a lower direction of the substrate support surface; and a second coolant channel formed to a lower direction of the first coolant channel along the first coolant channel and the first coolant channel, and comprises: a first chiller unit that is connected to the first coolant channel and is constructed so as to control at least one of a temperature, a flow speed, and a flow direction of a first coolant flowing in the first coolant channel; and a second chiller unit that is connected to the second coolant channel, and is constructed so as to control at least one of the temperature, the flow speed, and the flow direction of a second coolant flowing in the second coolant channel so as to be separated from the control of the first coolant.

SELECTED DRAWING: Figure 2

COPYRIGHT: (C)2024,JPO&INPIT

Description

Exemplary embodiments of the present disclosure relate to a substrate processing apparatus, a plasma processing apparatus, and a substrate processing method.

There is a technique described in Patent Document 1 as a technique for rapidly controlling temperature with a simple configuration in a plasma processing apparatus.

Japanese Patent Application Publication No. 2014-11382

The present disclosure provides a technique for optimizing the temperature within the plane of a substrate.

A substrate processing apparatus in an exemplary embodiment of the present disclosure includes a chamber, a substrate support disposed in the chamber and having a substrate support surface, the substrate support including a substrate temperature control member, and a substrate temperature control member. The adjustment member connects a first coolant channel formed below the substrate support surface and a second coolant channel formed below the first coolant channel along the first coolant channel. connected to the substrate support part and the first coolant flow path, and configured to control at least one of the temperature, flow rate, and flow direction of the first coolant flowing through the first coolant flow path. The first chiller unit is connected to the second refrigerant flow path, and controls at least one of the temperature, flow rate, and flow direction of the second refrigerant flowing through the second refrigerant flow path. a second chiller unit configured to control independently of the second chiller unit.

According to one exemplary embodiment of the present disclosure, a technique for optimizing the temperature within the plane of a substrate can be provided.

FIG. 1 is an explanatory diagram schematically showing an example of a plasma processing apparatus in an embodiment. FIG. 2 is an explanatory diagram showing an example of a configuration of a temperature control system for a substrate support part and an upper electrode assembly in exemplary embodiment 1. FIG. It is an explanatory view showing an example of arrangement of a first refrigerant flow path and a second refrigerant flow path in a substrate support part in a plan view. FIG. 7 is an explanatory diagram showing an example of the arrangement of a third coolant flow path and a fourth coolant flow path in the upper electrode assembly in a plan view. FIG. 2 is an explanatory diagram showing an example of a temperature control system in which a first refrigerant and a second refrigerant flow in the same direction. FIG. 2 is an explanatory diagram showing an example of a temperature control system in which a first refrigerant and a second refrigerant flow in opposite directions. When the flow direction of the second refrigerant and the flow direction of the first refrigerant are the same, and the flow rate and temperature of the first refrigerant and the second refrigerant are the same, the first refrigerant and the second refrigerant in the substrate support part 3 is a graph showing temperature fluctuations of a refrigerant. It is a graph which shows the temperature fluctuation of the 1st refrigerant|coolant and the 2nd refrigerant|coolant in a board|substrate support part when the temperature of a 2nd refrigerant|coolant is lower than the temperature of a 1st refrigerant|coolant. It is a graph which shows the temperature fluctuation of the 1st refrigerant|coolant and the 2nd refrigerant|coolant in a board|substrate support part when the flow velocity of a 2nd refrigerant|coolant is larger than the flow velocity of a 1st refrigerant|coolant. When the flow direction of the second refrigerant and the flow direction of the first refrigerant are opposite and the temperature of the second refrigerant is lower than the temperature of the first refrigerant, It is a graph showing temperature fluctuation of a refrigerant. FIG. 7 is an explanatory diagram showing an example of the configuration of a temperature control system for a substrate support part and an upper electrode assembly in exemplary embodiment 2; 7 is a graph showing temperature fluctuations of the first coolant and the second coolant in the substrate support part of exemplary embodiment 2. FIG. 7 is a graph showing temperature fluctuations of the first coolant and the second coolant in the substrate support when the temperature of the second coolant is lower than the temperature of the first coolant in exemplary embodiment 2. FIG. FIG. 9 is an explanatory diagram showing an example of the configuration of a temperature control system for a substrate support part and an upper electrode assembly in exemplary embodiment 3; FIG. 7 is an explanatory diagram showing an example of the configuration of a temperature control system for a substrate support part and an upper electrode assembly in exemplary embodiment 4; 7 is a graph showing temperature fluctuations of the first coolant and the second coolant in the substrate support part of the fourth exemplary embodiment.

Each embodiment of the present disclosure will be described below.

In one exemplary embodiment, a chamber and a substrate support disposed within the chamber and having a substrate support surface, the substrate support including a substrate temperature control member, and the substrate temperature control member having a substrate support surface. a substrate support portion having a first coolant flow path formed below the first coolant flow path, and a second coolant flow path formed below the first coolant flow path along the first coolant flow path; a first chiller unit connected to the first refrigerant flow path and configured to control at least one of the temperature, flow rate, and flow direction of the first refrigerant flowing through the first refrigerant flow path; At least one of the temperature, flow rate, and flow direction of the second refrigerant connected to the second refrigerant flow path and flowing through the second refrigerant flow path is controlled independently of the control of the first refrigerant. A substrate processing apparatus is provided, including a second chiller unit configured as follows.

In one exemplary embodiment, the flow direction of the second refrigerant is the same as the flow direction of the first refrigerant.

In one exemplary embodiment, the flow rate of the second coolant is different than the flow rate of the first coolant.

In one exemplary embodiment, the flow rate of the second coolant is greater than the flow rate of the first coolant.

In one exemplary embodiment, the temperature of the second refrigerant is different than the temperature of the first refrigerant.

In one exemplary embodiment, the temperature of the second refrigerant is lower than the temperature of the first refrigerant.

In one exemplary embodiment, the second refrigerant material is different than the first refrigerant material.

In one exemplary embodiment, the first coolant flow path has an inlet in a central region in the substrate support, an outlet in an edge region in the substrate support, and a first cross-sectional area in the central region. the second refrigerant flow path has an inlet in the central region, an outlet in the edge region, and a second cross-sectional area in the central region that is smaller than the first cross-sectional area; 3 and a fourth cross-sectional area larger than the second cross-sectional area in the edge region.

In one exemplary embodiment, the first coolant flow path has an inlet in a central region in the substrate support and an outlet in an edge region in the substrate support, and the second coolant flow path has an inlet in a central region in the substrate support. having an inlet in the edge region and an outlet in the edge region, a first spacing being formed between the first refrigerant flow path and the second refrigerant flow path in the central region; A second spacing smaller than the first spacing is formed between the passage and the second coolant flow path.

In one exemplary embodiment, the first coolant channel and the second coolant channel have the same cross-sectional area in the same region of the substrate support.

In one exemplary embodiment, the second refrigerant flow direction is opposite to the first refrigerant flow direction.

In one exemplary embodiment, the flow direction of the second refrigerant is opposite to the flow direction of the first refrigerant, and the flow rate of the second refrigerant is different than the flow rate of the first refrigerant.

In one exemplary embodiment, the flow direction of the second refrigerant is opposite to the flow direction of the first refrigerant, and the flow rate of the second refrigerant is greater than the flow rate of the first refrigerant.

In one exemplary embodiment, the flow direction of the second refrigerant is opposite to the flow direction of the first refrigerant, and the temperature of the second refrigerant is different than the temperature of the first refrigerant.

In one exemplary embodiment, the flow direction of the second refrigerant is opposite to the flow direction of the first refrigerant, and the temperature of the second refrigerant is lower than the temperature of the first refrigerant.

In one exemplary embodiment, the flow direction of the second refrigerant is opposite to the flow direction of the first refrigerant, and the second refrigerant material is different from the first refrigerant material.

In one exemplary embodiment, the first coolant flow path has an inlet in a central region in the substrate support, an outlet in an edge region in the substrate support, and a first cross-sectional area in the central region. and a third cross-sectional area having a second cross-sectional area in the edge region and smaller than the first cross-sectional area and the second cross-sectional area in an intermediate region located between the central region and the edge region in the substrate support part. the second refrigerant flow path has an inlet in the edge region, an outlet in the central region, a fourth cross-sectional area in the central region, and a fifth cross-sectional area in the edge region. and has a sixth cross-sectional area smaller than the fourth cross-sectional area and the fifth cross-sectional area in the intermediate region.

In one exemplary embodiment, a chamber, a substrate support disposed within the chamber and including a bottom electrode, and a top electrode disposed above the substrate support, between the substrate support and the top electrode. an upper electrode in which plasma is formed; and a temperature control member disposed above the upper electrode, the temperature control member including a first refrigerant flow path and a first refrigerant flow path along the first refrigerant flow path. a temperature control member having a second refrigerant flow path formed above the refrigerant flow path; and a temperature of a first refrigerant connected to the first refrigerant flow path and flowing through the first refrigerant flow path; a first chiller unit configured to control at least one of a flow rate and a flow direction; and a temperature of a second refrigerant connected to a second refrigerant flow path and flowing through the second refrigerant flow path; A second chiller unit configured to control at least one of flow rate and flow direction independently of control of the first coolant is provided.

In one exemplary embodiment, a substrate processing method is performed in a substrate processing apparatus, the substrate processing apparatus comprising: a chamber; a substrate support disposed within the chamber and having a substrate support surface; includes a substrate temperature control member, and the substrate temperature control member includes a first coolant flow path formed below the substrate support surface, and a first coolant flow path formed below the first coolant flow path along the first coolant flow path. a substrate support portion having a second coolant flow path formed therein, the substrate processing method includes the steps of: placing the substrate on the substrate support surface; and processing the substrate on the substrate support surface. , controlling at least one of the temperature, flow rate, and flow direction of the first coolant flowing through the first coolant channel while processing the substrate on the substrate support surface; controlling at least one of the temperature, flow rate, and flow direction of the second coolant flowing through the second coolant flow path independently of the control of the first coolant while processing the substrate; A substrate processing method is provided, comprising the steps of:

Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are denoted by the same reference numerals, and overlapping explanations will be omitted. Unless otherwise specified, positional relationships such as up, down, left, and right will be explained based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not indicate the actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

<Exemplary Embodiment 1>
<Example of plasma processing apparatus 1>
An example of the configuration of the plasma processing system will be described below. FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. The plasma processing apparatus 1 according to one exemplary embodiment performs a plasma processing method for plasma processing a substrate. The plasma processing apparatus 1 is an example of a substrate processing apparatus.

The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control section 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber (also simply referred to as a "chamber") 10 as a substrate processing chamber, a gas supply section 20, a power supply 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10 . The gas introduction section includes a shower head 13. Substrate support 11 is arranged within plasma processing chamber 10 . The shower head 13 is arranged above the substrate support section 11 . In one embodiment, showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 . The plasma processing chamber 10 has a plasma processing space (substrate processing space) 10s defined by a shower head 13, a side wall 10a of the plasma processing chamber 10, and a substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas exhaust port for discharging gas from the plasma processing space. Plasma processing chamber 10 is grounded. Showerhead 13 and substrate support 11 are electrically insulated from plasma processing chamber 10 .

The substrate support section 11 includes a main body section 50 and a ring assembly 51. The main body portion 50 has a central region 50a for supporting the substrate W and an annular region 50b for supporting the ring assembly 51. A wafer is an example of a substrate W. The annular region 50b of the main body 50 surrounds the central region 50a of the main body 50 in plan view. The substrate W is placed on the central region 50a of the main body 50, and the ring assembly 51 is placed on the annular region 50b of the main body 50 so as to surround the substrate W on the central region 50a of the main body 50. Therefore, the central region 50a is also called a substrate support surface for supporting the substrate W, and the annular region 50b is also called a ring support surface for supporting the ring assembly 51.

In one embodiment, the main body 50 includes a base 60 and an electrostatic chuck 61. Base 60 includes a conductive member. The conductive member of the base 60 can function as a lower electrode. Electrostatic chuck 61 is placed on base 60 . Electrostatic chuck 61 includes a ceramic member 61a and an electrostatic electrode 61b disposed within ceramic member 61a. Ceramic member 61a has a central region 50a. In one embodiment, ceramic member 61a also has an annular region 50b. Note that another member surrounding the electrostatic chuck 61, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 50b. In this case, the ring assembly 51 may be placed on the annular electrostatic chuck or the annular insulating member, or may be placed on both the electrostatic chuck 61 and the annular insulating member. Also, an RF or DC electrode may be placed within the ceramic member 61a, in which case the RF or DC electrode functions as the bottom electrode. When a bias RF signal or DC signal, which will be described later, is connected to an RF or DC electrode, the RF or DC electrode is also called a bias electrode. Note that both the conductive member of the base 60 and the RF or DC electrode may function as two lower electrodes.

Ring assembly 51 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is made of a conductive or insulating material, and the cover ring is made of an insulating material.

Further, the substrate support unit 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 61, the ring assembly 51, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the channels. In one embodiment, a flow path is formed within the base 60 and one or more heaters are disposed within the ceramic member 61a of the electrostatic chuck 61. Further, the substrate support section 11 may include a heat transfer gas supply section configured to supply heat transfer gas between the back surface of the substrate W and the central region 50a.

The substrate support portion 11 is provided with a lifter (lift pin) not shown. In one embodiment, the lifter is arranged in a plurality of through holes vertically penetrating the substrate support part 11, and is moved vertically within the through holes by a drive device (not shown). In one embodiment, the substrate W is carried into and out of the chamber 10 by a transport arm (not shown). The lifter can support the substrate W on the substrate support 11 and move it up and down, exchange the substrate W with the transfer arm, and place the substrate W on the substrate support 11.

The shower head 13 is configured to introduce at least one processing gas from the gas supply section 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. Showerhead 13 also includes an upper electrode assembly 80 . Upper electrode assembly 80 includes an upper electrode 81 and a temperature control member 200. The upper electrode 81 is arranged above the substrate support part 11 and at a position facing the substrate support part 11 . Then, plasma is formed between the substrate support part 11 and the upper electrode 81. In addition to the shower head 13, the gas introduction section may include one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a.

The gas supply 20 may include at least one gas source 21 and at least one flow controller 22 . In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 to the showerhead 13 via a respective flow controller 22 . Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, gas supply 20 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one process gas.

Power source 30 includes an RF power source 31 coupled to plasma processing chamber 10 via at least one impedance matching circuit. RF power supply 31 is configured to provide at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to at least one bottom electrode and/or at least one top electrode. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Accordingly, RF power source 31 may function as at least part of a plasma generation unit configured to generate a plasma from one or more process gases in plasma processing chamber 10 . Further, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated in the substrate W, and ion components in the formed plasma can be drawn into the substrate W.

In one embodiment, the RF power source 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generation section 31a is coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit, and generates a source RF signal (source RF power) for plasma generation. It is configured as follows. In one embodiment, the source RF signal has a frequency within the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are provided to at least one bottom electrode and/or at least one top electrode.

The second RF generating section 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same or different than the frequency of the source RF signal. In one embodiment, the bias RF signal has a lower frequency than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 100kHz to 60MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are provided to at least one bottom electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

Power source 30 may also include a DC power source 32 coupled to plasma processing chamber 10 . The DC power supply 32 includes a first DC generation section 32a and a second DC generation section 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one bottom electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one top electrode.

In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of DC-based voltage pulses is applied to the at least one bottom electrode and/or the at least one top electrode. The voltage pulse may have a pulse waveform that is rectangular, trapezoidal, triangular, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and the at least one bottom electrode. Therefore, the first DC generation section 32a and the waveform generation section constitute a voltage pulse generation section. When the second DC generation section 32b and the waveform generation section constitute a voltage pulse generation section, the voltage pulse generation section is connected to at least one upper electrode. The voltage pulse may have positive polarity or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. Note that the first and second DC generation units 32a and 32b may be provided in addition to the RF power source 31, or the first DC generation unit 32a may be provided in place of the second RF generation unit 31b. good.

The exhaust system 40 may be connected to a gas outlet 10e provided at the bottom of the plasma processing chamber 10, for example. Evacuation system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

Control unit 2 processes computer-executable instructions that cause plasma processing apparatus 1 to perform various steps described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to execute the various steps (plasma processing) described herein. The control unit 2 can execute plasma processing by controlling the power supply 30, the first chiller unit 101, the second chiller unit 102, the exhaust system 40, and the like. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit two a1 may be configured to read a program from the storage unit two a2 and perform various control operations by executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2, and is read out from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

FIG. 2 is an explanatory diagram showing an example of the configuration of a temperature control system for the substrate support section 11 and the upper electrode assembly 80. In one embodiment, the plasma processing apparatus 1 includes a substrate temperature control member 100, a first chiller unit 101, and a second chiller unit 102. The substrate support section 11 has a substrate temperature control member 100.

In one embodiment, the substrate temperature control member 100 includes a first coolant flow path 120 and a second coolant flow path 121. The first coolant flow path 120 and the second coolant flow path 121 are formed inside the substrate support section 11 . FIG. 3 is an explanatory diagram showing an example of the arrangement of the first coolant flow path 120 and the second coolant flow path 121 in the substrate support section 11 in a plan view. The first coolant flow path 120 is formed over the entire substrate support surface 11a in plan view. In one embodiment, the first coolant flow path 120 is formed in a substantially spiral shape from the center side to the edge side of the substrate support surface 11a. As shown in FIG. 2, the first coolant flow path 120 is formed from a central region 130 in the substrate support portion 11 to an edge region 132 through an intermediate region 131. The first refrigerant flow path 120 has an inlet/outlet 140 in the central region 130 and an inlet/outlet 141 in the edge region 132 .

The second refrigerant flow path 121 is arranged below the first refrigerant flow path 120 along the first refrigerant flow path 120 . The second coolant flow path 121 is formed over the entire substrate support surface 11a in plan view. In one embodiment, the second refrigerant flow path 121 is arranged directly below the first refrigerant flow path 120 so as to follow the same path as the first refrigerant flow path 120 . The second coolant flow path 121 is arranged in a direction away from the plasma processing space 10s (heat source) with respect to the first coolant flow path 120. In one embodiment, like the first coolant flow path 120, the second coolant flow path 121 extends substantially from the center side to the edge side of the substrate support surface 11a in plan view, as shown in FIG. It is formed in a spiral shape. As shown in FIG. 2, the second coolant flow path 121 is formed from the center region 130 of the substrate support portion 11, through the intermediate region 131, and to the edge region 132. The second refrigerant flow path 121 has an inlet/outlet 150 in the central region 130 and an inlet/outlet 151 in the edge region 132 .

The first refrigerant flow path 120 and the second refrigerant flow path 121 are vertically close to each other. A partition wall 190 is formed between the first refrigerant flow path 120 and the second refrigerant flow path 121. The partition wall 190 may be made of the same material as the other parts of the substrate support part 11, or may be made of a different material. The partition wall 190 may be formed of a thin sheet. In one embodiment, partition wall 190 has a constant thickness across central region 130, intermediate region 131, and edge region 132.

In one embodiment, the first refrigerant flow path 120 and the second refrigerant flow path 121 have a constant cross-sectional area across the central region 130, the intermediate region 131, and the edge region 132. In one embodiment, the first refrigerant flow path 120 and the second refrigerant flow path 121 have the same cross-sectional area.

The first chiller unit 101 can control at least one of the temperature, flow rate, and flow direction of the first refrigerant flowing through the first refrigerant flow path 120 . The first chiller unit 101 is connected to the inlets and outlets 140 and 141 of the first refrigerant flow path 120 . In one embodiment, the first chiller unit 101 has a first flow path 160 and a first refrigerant circulator 161. The first flow path 160 connects the inlet/outlet 140 of the first refrigerant flow path 120 and the first refrigerant circulator 161, and connects the inlet/outlet 141 of the first refrigerant flow path 120 and the first refrigerant circulator 161. , a circulation flow path for circulating the first refrigerant is formed between the first refrigerant flow path 120 and the first refrigerant circulator 161. A flow meter 162 is provided in the first flow path 160.

In one embodiment, the first refrigerant circulator 161 can supply the first refrigerant to the first refrigerant flow path 120 through the first flow path 160 . In one embodiment, the first refrigerant circulator 161 can set the first refrigerant supplied to the first refrigerant flow path 120 to a target temperature. In this case, the first refrigerant circulator 161 sets the first refrigerant to a target temperature based on the temperature measured by one or more temperature sensors so as to equalize the temperature of the substrate support surface. Good too. In one embodiment, the one or more temperature sensors are configured to measure the temperature at or near the substrate support surface. The one or more temperature sensors may be located within the substrate support 11 or external to the substrate support 11 . In one embodiment, the one or more temperature sensors include a plurality of temperature sensors disposed between the substrate support surface and the first coolant flow path 120. The plurality of temperature sensors may be configured to obtain a radial temperature distribution on the substrate support surface. In one embodiment, the one or more temperature sensors are configured to optically measure the temperature of the substrate on the substrate support surface. Further, in one embodiment, the first refrigerant circulator 161 can set the first refrigerant flowing through the first refrigerant flow path 120 to a target temperature. In this case, the first refrigerant circulation machine 161 sets the first refrigerant to a target temperature so as to equalize the temperature of the substrate support surface based on the temperature measured by the one or more temperature sensors described above. You may.

In one embodiment, the first refrigerant circulator 161 sets the flow rate of the first refrigerant to a target flow rate based on the flow rate of the first refrigerant in the first flow path 160 measured by the flow meter 162. can do. In one embodiment, the first refrigerant circulator 161 can set and change the flow direction (advance direction) of the first refrigerant in the first flow path 160. That is, the first refrigerant circulation machine 161 can supply the first refrigerant so that the first refrigerant enters through the inlet/outlet 140 of the first refrigerant flow path 120 and exits through the inlet/outlet 141, and The first refrigerant can be supplied such that the refrigerant enters through the inlet/outlet 141 of the first refrigerant flow path 120 and exits through the inlet/outlet 140.

The second chiller unit 102 can control at least one of the temperature, flow rate, and flow direction of the second refrigerant flowing through the second refrigerant flow path 121. The second chiller unit 102 is connected to the entrances and exits 150 and 151 of the second refrigerant flow path 121 . In one embodiment, the second chiller unit 102 has a second flow path 180 and a second refrigerant circulator 181. The second flow path 180 connects the inlet/outlet 150 of the second refrigerant flow path 121 and the second refrigerant circulator 181, and connects the inlet/outlet 151 of the second refrigerant flow path 121 and the second refrigerant circulator 181. , a circulation flow path for circulating the second refrigerant is formed between the second refrigerant flow path 121 and the second refrigerant circulator 181. A flow meter 182 is provided in the second flow path 180.

In one embodiment, the second refrigerant circulator 181 can supply the second refrigerant to the second refrigerant flow path 121 through the second flow path 180 . In one embodiment, the second refrigerant circulator 181 can set the second refrigerant supplied to the second refrigerant flow path 121 to a target temperature. In this case, the second refrigerant circulation machine 181 sets the second refrigerant to a target temperature so as to equalize the temperature of the substrate support surface based on the temperature measured by the one or more temperature sensors described above. You may. Furthermore, in one embodiment, the second refrigerant circulator 181 can set the second refrigerant flowing through the second refrigerant flow path 121 to a target temperature. In this case, the second refrigerant circulation machine 181 sets the second refrigerant to a target temperature so as to equalize the temperature of the substrate support surface based on the temperature measured by the one or more temperature sensors described above. You may.

In one embodiment, the second refrigerant circulator 181 sets the flow rate of the second refrigerant to a target flow rate based on the flow rate of the second refrigerant in the second flow path 180 measured by the flow meter 182. can do. In one embodiment, the second refrigerant circulator 181 can set and change the flow direction (advance direction) of the second refrigerant in the second flow path 180. That is, the second refrigerant circulation machine 181 can supply the second refrigerant so that the second refrigerant enters through the inlet/outlet 150 of the second refrigerant flow path 121 and exits through the inlet/outlet 151, and The second refrigerant can be supplied such that the refrigerant enters through the inlet/outlet 151 of the second refrigerant flow path 121 and exits through the inlet/outlet 150. The second chiller unit 102 is independent from the first chiller unit 101, and controls the temperature, flow rate, and flow direction of the second refrigerant in parallel with the control of the temperature, flow rate, and flow direction of the first refrigerant. Can be done independently.

In one embodiment, the plasma processing apparatus 1 includes an upper electrode assembly 80, a third chiller unit 201, and a fourth chiller unit 202. Upper electrode assembly 80 includes an upper electrode 81 and a temperature control member 200. Temperature control member 200 is arranged above upper electrode 81 .

In one embodiment, the temperature control member 200 includes a base 200a located above the upper electrode 81 and in contact with the upper electrode 81. Temperature control member 200 includes a third coolant flow path (first coolant flow path in the upper electrode assembly) 220 and a fourth coolant flow path 221 (second coolant flow path in the upper electrode assembly). The third refrigerant flow path 220 and the fourth refrigerant flow path 221 are formed inside the base portion 200a. FIG. 4 is an explanatory diagram showing an example of the arrangement of the third refrigerant flow path 220 and the fourth refrigerant flow path 221 in the upper electrode assembly 80 (base 200a of the temperature control member 200) in plan view. In one embodiment, the third coolant flow path 220 is formed over the entire exposed surface (lower surface) 80a of the upper electrode assembly 80 exposed to the plasma processing space 10s in plan view. In one embodiment, exposed surface 80a includes a portion of upper electrode assembly 80 that faces substrate support surface 11a. In one embodiment, the third coolant flow path 220 is formed over the entire area of the base 200a in plan view. In one embodiment, the third coolant flow path 220 is formed in a substantially spiral shape from the center side toward the edge side of the upper electrode assembly 80 (base portion 200a). As shown in FIG. 2, the third coolant flow path 220 is formed from a central region 230 in the upper electrode assembly 80 (base 200a), through an intermediate region 231, and to an edge region 232. The third refrigerant flow path 220 has an inlet/outlet 240 in the central region 230 and an inlet/outlet 241 in the edge region 232 .

The fourth refrigerant flow path 221 is arranged above the third refrigerant flow path 220 along the third refrigerant flow path 220 . The fourth coolant flow path 221 is arranged in a direction away from the plasma processing space 10s (heat source) with respect to the third coolant flow path 220. In one embodiment, the fourth refrigerant flow path 221 is arranged directly above the third refrigerant flow path 220 so as to follow the same path as the third refrigerant flow path 220 . In one embodiment, the fourth coolant flow path 221 is formed over the entire exposed surface 80a in plan view. In one embodiment, the fourth coolant flow path 221 is formed over the entire area of the base 200a in plan view. In one embodiment, like the third refrigerant flow path 220, the fourth refrigerant flow path 221 has a substantially spiral shape from the center side to the edge side of the exposed surface 80a in plan view, as shown in FIG. It is formed in the shape of As shown in FIG. 2, the fourth coolant flow path 221 is formed from a central region 230 in the upper electrode assembly 80 (base 200a), through an intermediate region 231, and to an edge region 232. The fourth refrigerant flow path 221 has an entrance/exit 250 in the central region 230 and an entrance/exit 251 in the edge region 232 .

The third refrigerant flow path 220 and the fourth refrigerant flow path 221 are vertically close to each other. A partition wall 290 is formed between the third refrigerant flow path 220 and the fourth refrigerant flow path 221. The partition wall 290 may be made of the same material as the other parts of the temperature control member 200, or may be made of a different material. The partition wall 290 may be formed of a thin sheet. In one embodiment, the partition wall 290 has a constant thickness across the central region 230, intermediate region 231, and edge region 232.

In one embodiment, the third refrigerant flow path 220 and the fourth refrigerant flow path 221 have a constant cross-sectional area across the central region 230, the intermediate region 231, and the edge region 232. In one embodiment, the third refrigerant flow path 220 and the fourth refrigerant flow path 221 have the same cross-sectional area.

The third chiller unit 201 can control at least one of the temperature, flow rate, and flow direction of the third refrigerant flowing through the third refrigerant flow path 220. The third chiller unit 201 is connected to the entrances and exits 240 and 241 of the third refrigerant flow path 220. In one embodiment, the third chiller unit 201 has a third flow path 260 and a third refrigerant circulator 261. The third flow path 260 connects the inlet/outlet 240 of the third refrigerant flow path 220 and the third refrigerant circulator 261, and connects the inlet/outlet 241 of the third refrigerant flow path 220 and the third refrigerant circulator 261. , a circulation flow path for circulating the third refrigerant is formed between the third refrigerant flow path 220 and the third refrigerant circulator 261. A flow meter 262 is provided in the third flow path 260.

In one embodiment, the third refrigerant circulator 261 can supply the third refrigerant to the third refrigerant flow path 220 through the third flow path 260 . In one embodiment, the third refrigerant circulator 261 can set the third refrigerant supplied to the third refrigerant flow path 220 to a target temperature. In this case, the third refrigerant circulator 261 sets the third refrigerant to a target temperature based on the temperature measured by the one or more temperature sensors described above so as to equalize the temperature of the substrate support surface. You may. Further, in one embodiment, the third refrigerant circulator 261 can set the third refrigerant flowing through the third refrigerant flow path 220 to a target temperature. In this case, the third refrigerant circulator 261 sets the third refrigerant to a target temperature based on the temperature measured by the one or more temperature sensors described above so as to equalize the temperature of the substrate support surface. You may.

In one embodiment, the third refrigerant circulator 261 sets the flow rate of the third refrigerant to a target flow rate based on the flow rate of the third refrigerant in the third flow path 260 measured by the flow meter 262. can do. In one embodiment, the third refrigerant circulator 261 can set and change the flow direction (advance direction) of the third refrigerant in the third flow path 260. That is, the third refrigerant circulation machine 261 can supply the third refrigerant so that the third refrigerant enters through the inlet/outlet 240 of the third refrigerant flow path 220 and exits through the inlet/outlet 241, and The third refrigerant can be supplied such that the refrigerant enters through the inlet/outlet 241 of the third refrigerant flow path 220 and exits through the inlet/outlet 240.

The fourth chiller unit 202 can control at least one of the temperature, flow rate, and flow direction of the fourth refrigerant flowing through the fourth refrigerant flow path 221. The fourth chiller unit 202 is connected to the entrances and exits 250 and 251 of the fourth refrigerant flow path 221 . In one embodiment, the fourth chiller unit 202 has a fourth flow path 280 and a fourth refrigerant circulator 281. The fourth flow path 280 connects the inlet/outlet 250 of the fourth refrigerant flow path 221 and the fourth refrigerant circulator 281, and connects the inlet/outlet 251 of the fourth refrigerant flow path 221 and the fourth refrigerant circulator 281. , forms a circulation flow path that can circulate the fourth refrigerant between the fourth refrigerant flow path 221 and the fourth refrigerant circulator 281. A flow meter 282 is provided in the fourth flow path 280.

In one embodiment, the fourth refrigerant circulator 281 can supply the fourth refrigerant to the fourth refrigerant flow path 221 through the fourth flow path 280 . In one embodiment, the fourth refrigerant circulator 281 can set the fourth refrigerant supplied to the fourth refrigerant flow path 221 to a target temperature. In this case, the fourth refrigerant circulation machine 281 sets the fourth refrigerant to a target temperature based on the temperature measured by the one or more temperature sensors described above so as to equalize the temperature of the substrate support surface. You may. Further, in one embodiment, the fourth refrigerant circulator 281 can set the fourth refrigerant flowing through the fourth refrigerant flow path 221 to a target temperature. In this case, the fourth refrigerant circulation machine 281 sets the fourth refrigerant to a target temperature based on the temperature measured by the one or more temperature sensors described above so as to equalize the temperature of the substrate support surface. You may.

In one embodiment, the fourth refrigerant circulator 281 sets the flow rate of the fourth refrigerant to a target flow rate based on the flow rate of the fourth refrigerant in the fourth flow path 280 measured by the flow meter 282. can do. In one embodiment, the fourth refrigerant circulator 281 can set and change the flow direction (advancing direction) of the fourth refrigerant in the fourth flow path 280. That is, the fourth refrigerant circulator 281 can supply the fourth refrigerant so that the fourth refrigerant enters through the inlet/outlet 250 of the fourth refrigerant flow path 221 and exits through the inlet/outlet 251, and The fourth refrigerant can be supplied such that the refrigerant enters through the inlet/outlet 251 of the fourth refrigerant flow path 221 and exits through the inlet/outlet 250. The fourth chiller unit 202 is independent from the third chiller unit 201, and controls the temperature, flow rate, and flow direction of the fourth refrigerant as well as the temperature, flow rate, and flow direction of the third refrigerant. Can be done independently.

<Example of plasma treatment method>
This plasma processing method includes an etching process for etching a film on the substrate W using plasma. This plasma processing method is an example of a substrate processing method. In one embodiment, this plasma processing method is executed by the control unit 2.

First, the substrate W is carried into the chamber 10 by a transport arm, placed on the substrate support part 11 by a lifter, and held by suction on the substrate support part 11 as shown in FIG.

Next, the processing gas is supplied by the gas supply unit 20 to the shower head 13, and from the shower head 13 to the plasma processing space 10s. The processing gas supplied at this time includes a gas that generates active species necessary for etching the substrate W.

One or more RF signals are supplied from the RF power source 31 to the upper electrode 81 and/or the lower electrode. The atmosphere within the plasma processing space 10s may be exhausted from the gas exhaust port 10e, and the pressure inside the plasma processing space 10s may be reduced. As a result, plasma is generated in the plasma processing space 10s, and the substrate W is etched.

During plasma processing, in the temperature control system shown in FIG. The section 11 is cooled. Further, the third coolant and the fourth coolant are supplied to the third coolant passage 220 and the fourth coolant passage 221 of the upper electrode assembly 80, respectively, so that the upper electrode assembly 80 is cooled.

In one embodiment, the flow direction of the second coolant in the substrate support 11 may be the same as the flow direction of the first coolant. FIG. 5 is an explanatory diagram showing an example of a temperature control system for the substrate support part 11 and the upper electrode assembly 80 in a case where the flow direction of the second coolant and the flow direction of the first coolant are the same. In one embodiment, the first coolant is supplied by the first chiller unit 101 to the first coolant channel 120 inside the substrate support 11 . The first refrigerant is controlled to a first temperature and a first flow rate by the first chiller unit 101 and is supplied to the inlet/outlet 140 in the central region 130 of the first refrigerant flow path 120 . The first coolant passes through the central region 130, intermediate region 131, and edge region 132 of the substrate support 11 in this order, and is discharged from the entrance/exit 141 in the edge region 132.

The second coolant is supplied by the second chiller unit 102 to the second coolant flow path 121 inside the substrate support section 11 . The second refrigerant is controlled to a second temperature and a second flow rate by the second chiller unit 102 and is supplied to the inlet/outlet 150 in the central region 130 of the second refrigerant flow path 121 . The second coolant passes through the central region 130, middle region 131, and edge region 132 of the substrate support 11 in this order, and is discharged from the entrance/exit 151 in the edge region 132.

In this case, the second flow rate of the second refrigerant may be different from the first flow rate of the first refrigerant, and may be greater than the first flow rate. The second temperature of the second refrigerant may be different from the first temperature of the first refrigerant, and may be lower than the first temperature. Furthermore, the material of the second refrigerant may have a lower specific heat and lower viscosity than the material of the first refrigerant.

In one embodiment, the flow direction of the second coolant in the substrate support 11 may be opposite to the flow direction of the first coolant. FIG. 6 is an explanatory diagram showing an example of a temperature control system for the substrate support part 11 and the upper electrode assembly 80 in a case where the flow direction of the second coolant and the flow direction of the first coolant are opposite to each other. In one embodiment, a first refrigerant is set at a first temperature and a first flow rate and is supplied to an inlet/outlet 140 in a central region 130 of the first refrigerant flow path 120 . The first coolant passes through the central region 130, intermediate region 131, and edge region 132 of the substrate support 11 in this order, and is discharged from the entrance/exit 141 in the edge region 132.

The second refrigerant is set at a second temperature and a second flow rate and is supplied to the inlet/outlet 151 in the edge region 132 of the second refrigerant flow path 121 . The second coolant passes through the edge region 132, intermediate region 131, and central region 130 of the substrate support 11 in this order, and is discharged from the entrance/exit 150 in the central region 130.

In this case, the second flow rate of the second refrigerant may be different from the first flow rate of the first refrigerant and may be greater than the first flow rate. The second temperature of the second refrigerant may be different from the first temperature of the first refrigerant, and may be lower than the first temperature. The material of the second refrigerant may have a lower specific heat and lower viscosity than the material of the first refrigerant.

In one embodiment, as shown in FIG. 5, the flow direction of the fourth coolant in the upper electrode assembly 80 may be the same as the flow direction of the third coolant. The third coolant is supplied to the third coolant flow path 220 inside the upper electrode assembly 80 by the third chiller unit 201 . The third refrigerant is controlled to a third temperature and a third flow rate by the third chiller unit 201 and is supplied to the inlet/outlet 240 in the central region 230 of the third refrigerant flow path 220 . The third coolant passes through the central region 230 , intermediate region 231 , and edge region 232 of the upper electrode assembly 80 in this order, and is discharged through the inlet/outlet 241 in the edge region 232 .

The fourth coolant is supplied to the fourth coolant flow path 221 inside the upper electrode assembly 80 by the fourth chiller unit 202 . The fourth refrigerant is controlled to a fourth temperature and a fourth flow rate by the fourth chiller unit 202 and is supplied to the inlet/outlet 250 in the central region 230 of the fourth refrigerant flow path 221 . The fourth coolant passes through the central region 230, middle region 231, and edge region 232 of the upper electrode assembly 80 in this order, and is discharged from the inlet/outlet 251 in the edge region 232.

In this case, the fourth flow rate of the fourth refrigerant may be different from the third flow rate of the third refrigerant and may be higher than the third flow rate. The fourth temperature of the fourth refrigerant may be different from the third temperature of the third refrigerant, and may be lower than the third temperature. The material of the fourth refrigerant may have a lower specific heat and lower viscosity than the material of the third refrigerant.

In one embodiment, as shown in FIG. 6, the flow direction of the fourth coolant in the upper electrode assembly 80 may be opposite to the flow direction of the third coolant. The third refrigerant is set at a third temperature and a third flow rate and is supplied to an inlet/outlet 240 in the central region 230 of the third refrigerant flow path 220 . The third coolant passes through the central region 230 , intermediate region 231 , and edge region 232 of the upper electrode assembly 80 in this order, and is discharged through the inlet/outlet 241 in the edge region 232 .

The fourth refrigerant is set at a fourth temperature and a fourth flow rate and is supplied to the inlet/outlet 251 in the edge region 232 of the fourth refrigerant flow path 221 . The fourth coolant passes through the edge region 232 , the middle region 231 , and the central region 230 of the upper electrode assembly 80 in this order, and exits through the inlet/outlet 250 in the central region 230 .

In this case, the fourth flow rate of the fourth refrigerant may be different from the third flow rate of the third refrigerant and may be higher than the third flow rate. The fourth temperature of the fourth refrigerant may be different from the third temperature of the third refrigerant, and may be lower than the third temperature. The material of the fourth refrigerant may have a lower specific heat and lower viscosity than the material of the third refrigerant.

The etching process is performed for a predetermined period of time, and then the supply of processing gas to the plasma processing space 10s and the supply of RF signals to the upper electrode and/or the lower electrode are stopped. Thereafter, the substrate W is lifted by lift pins and carried out from the chamber 10 by a transport arm (not shown).

According to the exemplary embodiment, the substrate support unit 11 includes the substrate temperature control member 100, and the substrate temperature control member 100 includes a first coolant formed below the substrate support surface 11a along the substrate support surface 11a. It has a flow path 120 and a second refrigerant flow path 121 arranged below the first refrigerant flow path 120 along the first refrigerant flow path 120 . The plasma processing apparatus 1 includes a first refrigerant connected to the first refrigerant flow path 120 and configured to control at least one of the temperature, flow rate, and flow direction of the first refrigerant flowing through the first refrigerant flow path 120. The chiller unit 101 is connected to the second refrigerant flow path 121, and controls at least one of the temperature, flow rate, and flow direction of the second refrigerant flowing through the second refrigerant flow path 121. A second chiller unit 102 that performs control of the refrigerant independently of control of the first refrigerant.

By the way, the coolant flowing through the coolant flow path formed inside the substrate support section is affected by heat transmitted from a heat source such as plasma, and the coolant temperature increases as it progresses from the inlet to the outlet. As a result, the temperature of the substrate support surface of the substrate support section becomes non-uniform, and the temperature of the substrate supported by the substrate support surface may also become non-uniform. If the temperature within the substrate surface becomes non-uniform, the processing within the substrate surface may also become non-uniform.

According to this exemplary embodiment, the substrate temperature control member 100 of the substrate support section 11 has a first coolant flow path 120 formed below the substrate support surface 11a along the substrate support surface 11a, and a first coolant flow path 120 formed below the substrate support surface 11a. It has a second refrigerant flow path 121 arranged below the first refrigerant flow path 120 along the refrigerant flow path 120 . The first chiller unit 101 controls at least one of the temperature, flow rate, and flow direction of the first refrigerant flowing through the first refrigerant flow path 120, and the second chiller unit 102 controls the second refrigerant. controlling at least one of the temperature, flow rate, and flow direction of the second refrigerant flowing through the refrigerant flow path 121, and controlling the second refrigerant and the first refrigerant independently of each other. Can be done. Thereby, the heat of the first refrigerant flowing through the first refrigerant flow path 120 of the substrate support section 11 can be removed by the second refrigerant of the second refrigerant flow path 121. As a result, the temperature of the first coolant flowing through the first coolant flow path 120 is made uniform, and the temperature of the substrate support surface 11a and the temperature of the substrate supported by the substrate support surface 11a are made uniform. Therefore, the temperature within the plane of the substrate can be optimized.

According to this exemplary embodiment, the flow direction of the second coolant may be the same as the flow direction of the first coolant. In this case, the second flow rate of the second refrigerant controlled by the second chiller unit 102 may be greater than the flow rate of the first refrigerant controlled by the first chiller unit 101. Also, in one embodiment, the second temperature of the second refrigerant controlled by the second chiller unit 102 is lower than the first temperature of the first refrigerant controlled by the first chiller unit 101. It's okay. In FIG. 7, the flow direction of the second refrigerant and the flow direction of the first refrigerant are the same, and the first refrigerant supplied to the first refrigerant flow path 120 and the second refrigerant flow path 121 are It is a graph which shows the temperature fluctuation of the 1st refrigerant|coolant and the 2nd refrigerant|coolant in the board|substrate support part 11 when the flow rate and temperature of the 2nd refrigerant|coolant supplied are the same. In FIG. 7, the initial temperature of the first refrigerant is T0, and the maximum temperature is T1. FIG. 8 shows a case where the temperature of the second refrigerant supplied to the second refrigerant flow path 121 is lower than the temperature of the first refrigerant supplied to the first refrigerant flow path 120 (the flow rate is the same). , is a graph showing temperature fluctuations of the first refrigerant and the second refrigerant in the substrate support part 11. FIG. As shown in FIG. 8, by making the temperature of the second coolant lower than the temperature of the first coolant, the rise in temperature of the first coolant in the substrate support part 11 is reduced compared to the case of FIG. can do.

FIG. 9 is a graph showing temperature fluctuations of the first refrigerant and the second refrigerant in the substrate support section 11 when the flow speed of the second refrigerant is higher than the flow speed of the first refrigerant (at the same temperature). . As shown in FIG. 9, by making the flow rate of the second coolant higher than the flow rate of the first coolant, the rise in temperature of the first coolant in the substrate support part 11 is reduced compared to the case of FIG. can do.

According to the exemplary embodiment, the flow direction of the second coolant may be opposite to the flow direction of the first coolant. In this case, the second temperature of the second refrigerant controlled by the second chiller unit 102 may be lower than the first temperature of the first refrigerant controlled by the first chiller unit 101. FIG. 10 shows a case where the flow direction of the second refrigerant is opposite to the flow direction of the first refrigerant, and the temperature of the second refrigerant supplied to the second refrigerant flow path 121 is higher than that of the first refrigerant flow path. 120 is a graph showing temperature fluctuations of the first refrigerant and the second refrigerant in the substrate support section 11 when the temperature is lower than the temperature of the first refrigerant supplied to the substrate support section 120 (the flow rate is the same). As shown in FIG. 10, by making the temperature of the second coolant lower than the temperature of the first coolant, the increase in temperature of the first coolant in the substrate support part 11 is reduced compared to the case of FIG. can do.

According to the exemplary embodiment, the temperature control member 200 of the upper electrode assembly 80 includes a third coolant flow path 220 formed above the exposed surface 80a along the exposed surface 80a of the upper electrode 81; A fourth refrigerant flow path 221 is formed above the third refrigerant flow path 220 along the refrigerant flow path 220 . The third chiller unit 201 controls at least one of the temperature, flow rate, and flow direction of the third refrigerant flowing through the third refrigerant flow path 220, and the fourth chiller unit 202 controls the fourth refrigerant. controlling at least one of the temperature, flow velocity, and flow direction of the fourth refrigerant flowing through the refrigerant flow path 221, and controlling the fourth refrigerant and the third refrigerant independently of each other. Can be done. Thereby, the heat of the third refrigerant flowing through the third refrigerant flow path 220 of the upper electrode assembly 80 can be removed by the fourth refrigerant flowing through the fourth refrigerant flow path 221. As a result, the temperature of the third refrigerant flowing through the third refrigerant flow path 220 is equalized, and the temperature at the exposed surface 80a of the upper electrode 81, the temperature of the plasma processing space 10s exposed to the exposed surface 80a, and, in turn, The temperature of the substrate supported by the substrate support surface 11a facing the exposed surface 80a becomes uniform. Therefore, the temperature within the plane of the substrate can be optimized. Moreover, when the temperature of the upper electrode 81 becomes uniform, the gas temperature in the plasma becomes uniform, and gas decomposition and adhesion become uniform. This makes the processing uniform within the plane of the substrate.

<Exemplary Embodiment 2>
FIG. 11 is an explanatory diagram showing an example of the configuration of a temperature control system for the substrate support section 11 and the upper electrode assembly 80 in this exemplary embodiment. In the exemplary embodiment, the first coolant flow path 120 has an inlet (inlet/outlet 140 ) in the central region 130 of the substrate support 11 and an outlet (inlet/outlet 141 ) in the edge region 132 of the substrate support 11 . and has a first cross-sectional area in the central region 130 and a second cross-sectional area in the edge region 132, and the second refrigerant flow path 121 has an inlet (inlet/outlet 150) in the central region 130, It has an outlet (entrance/exit 151) in the edge region 132, has a third cross-sectional area smaller than the first cross-sectional area in the central region 130, and has a fourth cross-sectional area larger than the second cross-sectional area in the edge region 132. It may have an area.

The cross-sectional area of the second refrigerant flow path 121 in the central region 130 is smaller than the cross-sectional area of the first refrigerant flow path 120, and the cross-sectional area of the second refrigerant flow path 121 in the edge region 132 is smaller than that of the first refrigerant flow path 120. It is larger than the cross-sectional area of the flow path 120. In one embodiment, the cross-sectional area of the second coolant channel 121 in the intermediate region 131 is the same as the cross-sectional area of the first coolant channel 120 . The first refrigerant enters through an inlet/outlet 140 in the central region 130 and exits through an inlet/outlet 141 in the edge region 132 . The second refrigerant enters through the inlet/outlet 150 in the central region 130 and exits through the inlet/outlet 151 in the edge region 132 .

According to the exemplary embodiment, the cross-sectional area (volume) of the second refrigerant flow path 121 is smaller than that of the first refrigerant flow path 120 in the central region 130 where there is less heat accumulation for the first refrigerant. Accordingly, the amount of heat transferred from the first refrigerant to the second refrigerant can be reduced. By making the cross-sectional area (volume) of the second refrigerant flow path 121 larger than that of the first refrigerant flow path 120 in the edge region 132 where a large amount of heat is accumulated with respect to the first refrigerant, The amount of heat transferred to the second refrigerant can be increased. As a result, the second refrigerant can efficiently remove heat from the first refrigerant in the edge region 132, so that the temperature of the first refrigerant flowing through the first refrigerant flow path 120 is made uniform. FIG. 12 is a graph showing temperature fluctuations of the first coolant and the second coolant in the substrate support 11 in this exemplary embodiment. As shown in FIG. 12, the cross-sectional area of the second refrigerant flow path 121 in the central region 130 is made smaller than the cross-sectional area of the first refrigerant flow path 120, and the cross-sectional area of the second refrigerant flow path 121 is made smaller in the edge region 132. By making the area larger than the cross-sectional area of the first refrigerant flow path 120, the rise in temperature of the first refrigerant can be reduced compared to the case of FIG.

In this exemplary embodiment, other configurations of the plasma processing apparatus 1, plasma processing method, etc. may be the same as those in the above-described exemplary embodiment 1.

In one embodiment, the flow rate and temperature of the second refrigerant and the first refrigerant may be controlled in the same manner as in exemplary embodiment 1 above. The temperature of the second refrigerant controlled by the second chiller unit 102 may be lower than the temperature of the first refrigerant controlled by the first chiller unit 101. FIG. 13 is a graph showing temperature fluctuations of the first refrigerant and the second refrigerant in the substrate support section 11 when the temperature of the second refrigerant is lower than the temperature of the first refrigerant (flow velocity is the same). . As shown in FIG. 13, the temperature of the second refrigerant is made lower than the temperature of the first refrigerant, and the cross-sectional area of the second refrigerant flow path 121 in the central region 130 is made smaller than that of the first refrigerant flow path 120. By making the cross-sectional area of the second refrigerant flow path 121 larger than the cross-sectional area of the first refrigerant flow path 120 in the edge region 132, compared to the case of FIG. It is possible to reduce the rise in temperature of the refrigerant.

In the upper electrode assembly 80 in this exemplary embodiment, similar to the substrate support 11 described above, the fourth coolant flow path 221 is relatively smaller than the third coolant flow path 220 in the central region 230 of the upper electrode assembly 80. The edge region 232 may have a relatively larger cross-sectional area than the third coolant flow path 220 . That is, the third coolant flow path 220 has an inlet (inlet/outlet 240 ) in the central region 230 of the upper electrode assembly 80 , an outlet (inlet/outlet 241 ) in the edge region 232 of the upper electrode assembly 80 , and The fourth refrigerant flow path 221 has an inlet (inlet/outlet 250 ) in the central region 230 and an outlet in the edge region 232 . (gateway 251), has a third cross-sectional area smaller than the first cross-sectional area in the central region 230, and has a fourth cross-sectional area larger than the second cross-sectional area in the edge region 232. It's okay. In this case, the third refrigerant can efficiently take away heat from the fourth refrigerant in the edge region 232, so that the temperature of the third refrigerant flowing through the third refrigerant flow path 220 is made uniform.

In this exemplary embodiment, the temperature and flow rate control for the third refrigerant and the temperature and flow rate control for the third refrigerant may be similar to those in the above-described first exemplary embodiment.

<Example Embodiment 3>
FIG. 14 is an explanatory diagram showing an example of the configuration of a temperature control system for the substrate support section 11 and the upper electrode assembly 80 in this exemplary embodiment. In the exemplary embodiment, the first coolant flow path 120 has an inlet (inlet/outlet 140 ) in the central region 130 of the substrate support 11 and an outlet (inlet/outlet 141 ) in the edge region 132 of the substrate support 11 . However, the second refrigerant flow path 121 has an inlet (inlet/outlet 150) in the central region 130, an outlet (inlet/outlet 151) in the edge region 132, and has a connection between the first refrigerant flow path 120 and the first refrigerant flow path in the central region 130. A first interval is formed between the first refrigerant passage 120 and the second refrigerant passage 121 in the edge region 132, and a second interval smaller than the first interval is formed between the first refrigerant passage 120 and the second refrigerant passage 121 in the edge region 132. It may be arranged such that an interval of .

In one embodiment, the first coolant flow path 120 and the second coolant flow path 121 have the same cross-sectional area in the same region within the plane of the substrate support 11 . In one embodiment, the first refrigerant flow path 120 and the second refrigerant flow path 121 have the same cross-sectional area in each of the central region 130, intermediate region 131, and edge region 132.

In one embodiment, the thickness of the partition wall 190 formed between the first refrigerant flow path 120 and the second refrigerant flow path 121 in the edge region 132 is the same as the thickness of the partition wall 190 formed between the first refrigerant flow path 120 and the second refrigerant flow path 121 in the center region 130. The thickness of the partition wall 190 is smaller than the thickness of the partition wall 190 formed between the refrigerant flow path 121 of No. 2 and the refrigerant channel 121 of No. 2. In one embodiment, the thickness of the partition 190 formed between the first refrigerant flow path 120 and the second refrigerant flow path 121 in the intermediate region 131 is smaller than the thickness of the partition 190 in the central region 130, and It is larger than the thickness of partition wall 190 in region 132.

According to the exemplary embodiment, by increasing the distance between the first refrigerant flow path 120 and the second refrigerant flow path 121 in the central region 130 where there is less heat accumulation for the first refrigerant. The amount of heat transferred from the first refrigerant to the second refrigerant can be reduced. In the edge region 132 where a large amount of heat is accumulated with respect to the first refrigerant, by shortening the distance between the first refrigerant flow path 120 and the second refrigerant flow path 121, the distance between the first refrigerant and the second refrigerant is reduced. The amount of heat transferred to the refrigerant can be increased. As a result, the second refrigerant can efficiently remove heat from the first refrigerant in the edge region 132, so that the temperature of the first refrigerant flowing through the first refrigerant flow path 120 is made uniform.

In this exemplary embodiment, other configurations of the plasma processing apparatus 1, temperature and flow rate control for the first coolant, temperature and flow rate control for the second coolant, plasma processing method, etc. are the same as in the above-described exemplary embodiment 1. It may be similar.

In the upper electrode assembly 80 in this exemplary embodiment, similar to the substrate support 11 described above, the spacing between the third coolant flow path 220 and the fourth coolant flow path 221 in the edge region 232 of the upper electrode assembly 80 may be made smaller than the distance between the third refrigerant flow path 220 and the fourth refrigerant flow path 221 in the central region 230. That is, the third coolant flow path 220 has an inlet (inlet/outlet 240) in the central region 230 of the upper electrode assembly 80, an outlet (inlet/outlet 241) in the edge region 232 of the upper electrode assembly 80, and a fourth The refrigerant flow path 221 has an inlet (inlet/outlet 250) in the central region 230, an outlet (inlet/outlet 251) in the edge region 232, and a third refrigerant flow path 220 and a fourth refrigerant flow path in the central region 230. 221, and a second interval smaller than the first interval is formed between the third refrigerant passage 220 and the fourth refrigerant passage 221 in the edge region 232. You may do so. In this case, the fourth refrigerant can efficiently remove heat from the third refrigerant in the edge region 232, so that the temperature of the third refrigerant flowing through the third refrigerant flow path 220 is made uniform.

In this exemplary embodiment, the temperature and flow rate control for the third refrigerant and the temperature and flow rate control for the third refrigerant may be similar to those in the above-described first exemplary embodiment.

<Example Embodiment 4>
FIG. 15 is an explanatory diagram showing an example of the configuration of a temperature control system for the substrate support section 11 and the upper electrode assembly 80 in this exemplary embodiment. In the exemplary embodiment, the first coolant flow path 120 has an inlet (inlet/outlet 140 ) in the central region 130 of the substrate support 11 and an outlet (inlet/outlet 141 ) in the edge region 132 of the substrate support 11 . The central region 130 has a first cross-sectional area, the edge region 132 has a second cross-sectional area, and the intermediate region 131 of the substrate support 11 has a first cross-sectional area and a second cross-sectional area. It has a small third cross-sectional area. The second refrigerant flow path 121 has an inlet (inlet/outlet 151) in the edge region 132, an outlet (inlet/outlet 150) in the central region 130, a fourth cross-sectional area in the central region 130, and an edge region 132 and a sixth cross-sectional area smaller than the fourth cross-sectional area and the fifth cross-sectional area at the intermediate region 131.

In the first coolant flow path 120, the cross-sectional area of the intermediate region 131 is smaller than the cross-sectional area of the central region 130 and the cross-sectional area of the edge region 132. In the second refrigerant flow path 121, the cross-sectional area of the intermediate region 131 is smaller than the cross-sectional area of the central region 130 and the cross-sectional area of the edge region 132. The first refrigerant enters through an inlet/outlet 140 in the central region 130 and exits through an inlet/outlet 141 in the edge region 132 . The second refrigerant enters through an inlet/outlet 151 in the edge region 132 and exits through an inlet/outlet 150 in the central region 130 .

In one embodiment, the first coolant flow path 120 and the second coolant flow path 121 have the same cross-sectional area in the same region within the plane of the substrate support 11 . In one embodiment, the first refrigerant flow path 120 and the second refrigerant flow path 121 have the same cross-sectional area in each of the central region 130, intermediate region 131, and edge region 132.

According to the exemplary embodiment, the cold second coolant passes through the second coolant flow path 121 in the edge region 132 where the heat accumulation for the first coolant is high, so that the second coolant is transferred from the first coolant to the second coolant. The amount of heat transferred to the refrigerant can be increased. In the central region 130 where little heat is accumulated with respect to the first refrigerant, the relatively high temperature second refrigerant passes through the second refrigerant flow path 121, so that heat is transferred from the first refrigerant to the second refrigerant. The amount of transmission can be reduced. In the intermediate region 131, by making the cross-sectional areas of the first refrigerant flow path 120 and the second refrigerant flow path 121 relatively small, the substantial flow velocity of the first refrigerant and the second refrigerant is increased. Accordingly, the amount of heat transferred from the first refrigerant to the second refrigerant can be increased. As a result, the heat of the first coolant can be taken away in a well-balanced manner throughout the substrate support section 11, so that the temperature of the first coolant flowing through the first coolant flow path 120 is made uniform.

In this exemplary embodiment, other configurations of the plasma processing apparatus 1, temperature and flow rate control for the first coolant, temperature and flow rate control for the second coolant, plasma processing method, etc. are the same as in the above-described exemplary embodiment 1. It may be similar.

FIG. 16 shows that in the exemplary embodiment, the flow direction of the second refrigerant and the first refrigerant are opposite, and the flow direction is intermediate between the first refrigerant flow path 120 and the second refrigerant flow path 121. 7 is a graph showing temperature fluctuations of the first coolant and the second coolant in the substrate support part 11 when the cross-sectional area of the region 131 is smaller than the cross-sectional areas of the central region 130 and the edge region 132. FIG. The flow rate and temperature of the first refrigerant and the second refrigerant are the same. As shown in FIG. 16, the cross-sectional area of the first refrigerant flow path 120 and the second refrigerant flow path 121 in the intermediate region 131 is the same as that of the first refrigerant flow path 120 and the second refrigerant flow path in the center region 130 and the edge region 132. By making the cross-sectional area of the flow path 121 relatively smaller than that of the flow path 121, the rise in temperature of the first refrigerant can be reduced compared to the case of FIG.

In the upper electrode assembly 80 in this exemplary embodiment, similarly to the substrate support 11, the cross-sectional areas of the third coolant flow path 220 and the fourth coolant flow path 221 in the intermediate region 231 are set to the central region 230 and the edge region. 232 may be relatively smaller than the cross-sectional area of the third refrigerant flow path 220 and the fourth refrigerant flow path 221. That is, in the exemplary embodiment, the third coolant flow path 220 has an inlet (inlet/outlet 240 ) in the central region 230 in the upper electrode assembly 80 and an outlet (inlet/outlet 241 ) in the edge region 232 in the upper electrode assembly 80 . and has a first cross-sectional area at a central region 230, a second cross-sectional area at an edge region 232, and a first cross-sectional area and a second cross-sectional area at an intermediate region 231 in the upper electrode assembly 80. has a third cross-sectional area smaller than the third cross-sectional area. The fourth refrigerant flow path 221 has an inlet (entrance/exit 251) in the edge region 232, an outlet (inlet/outlet 250) in the central region 230, a fourth cross-sectional area in the central region 230, and an edge region 232 may have a fifth cross-sectional area, and the intermediate region 231 may have a sixth cross-sectional area smaller than the fourth cross-sectional area and the fifth cross-sectional area.

In this exemplary embodiment, the temperature and flow rate control for the third refrigerant and the temperature and flow rate control for the third refrigerant may be similar to those in the above-described first exemplary embodiment.

In the exemplary embodiments described above, the present plasma processing apparatus may undergo various modifications without departing from the scope and spirit of the present disclosure. For example, some components of one embodiment can be added to other embodiments within the ordinary creative ability of those skilled in the art. Also, some components in one embodiment can be replaced with corresponding components in other embodiments.

In the exemplary embodiments described above, two coolant flow paths were formed in both the substrate support 11 and the upper electrode assembly 80, but two coolant flow paths were formed only in the substrate support 11 or only in the upper electrode assembly 80. A channel may be formed. In the above exemplary embodiments, the present plasma processing apparatus may be a plasma processing apparatus using any plasma source, such as inductively coupled plasma or microwave plasma, in addition to the capacitively coupled plasma processing apparatus. . The substrate processing in this plasma processing apparatus may be etching or film formation.

DESCRIPTION OF SYMBOLS 1... Plasma processing apparatus, 10... Chamber, 11... Substrate support part, 11a... Substrate support surface, 80... Upper electrode assembly, 100... Substrate temperature control member, 101... First chiller unit, 102... Second chiller unit, 120... First refrigerant channel, 121... Second coolant channel, 130... Central region, 131... Intermediate region, 132... Edge region, W... Substrate

Claims (19)

a chamber;
A substrate support part disposed in the chamber and having a substrate support surface, the substrate support part including a substrate temperature control member, and the substrate temperature control member includes a substrate support part formed below the substrate support surface. a substrate support section having one coolant flow path and a second coolant flow path formed below the first coolant flow path along the first coolant flow path;
A first chiller unit connected to the first refrigerant flow path and configured to control at least one of the temperature, flow rate, and flow direction of the first refrigerant flowing through the first refrigerant flow path. and,
At least one of the temperature, flow rate, and flow direction of the second refrigerant connected to the second refrigerant flow path and flowing through the second refrigerant flow path is controlled independently of the control of the first refrigerant. a second chiller unit configured to control the
Substrate processing equipment. The flow direction of the second refrigerant is the same as the flow direction of the first refrigerant.
The substrate processing apparatus according to claim 1. the flow rate of the second refrigerant is different from the flow rate of the first refrigerant;
The substrate processing apparatus according to claim 2. the flow rate of the second refrigerant is greater than the flow rate of the first refrigerant;
The substrate processing apparatus according to claim 2. the temperature of the second refrigerant is different from the temperature of the first refrigerant;
The substrate processing apparatus according to claim 2. the temperature of the second refrigerant is lower than the temperature of the first refrigerant;
The substrate processing apparatus according to claim 2. The material of the second refrigerant is different from the material of the first refrigerant,
The substrate processing apparatus according to claim 2. The first refrigerant flow path is
having an entrance in a central region of the substrate support;
having an outlet in an edge region of the substrate support;
having a first cross-sectional area in the central region;
having a second cross-sectional area in the edge region;
The second refrigerant flow path is
having an entrance in the central region;
having an outlet in the edge region;
having a third cross-sectional area smaller than the first cross-sectional area in the central region;
having a fourth cross-sectional area larger than the second cross-sectional area in the edge region;
The substrate processing apparatus according to any one of claims 2 to 7. The first refrigerant flow path is
having an entrance in a central region of the substrate support;
having an outlet in an edge region of the substrate support;
The second refrigerant flow path is
having an entrance in the central region;
having an outlet in the edge region;
a first interval is formed between the first refrigerant flow path and the second refrigerant flow path in the central region;
A second interval smaller than the first interval is formed between the first refrigerant flow path and the second refrigerant flow path in the edge region.
The substrate processing apparatus according to any one of claims 2 to 7. The first coolant flow path and the second coolant flow path have the same cross-sectional area in the same area in the substrate support part,
The substrate processing apparatus according to claim 9. The flow direction of the second refrigerant is opposite to the flow direction of the first refrigerant.
The substrate processing apparatus according to claim 1. the flow rate of the second refrigerant is different from the flow rate of the first refrigerant;
The substrate processing apparatus according to claim 11. the flow rate of the second refrigerant is greater than the flow rate of the first refrigerant;
The substrate processing apparatus according to claim 11. the temperature of the second refrigerant is different from the temperature of the first refrigerant;
The substrate processing apparatus according to claim 11. the temperature of the second refrigerant is lower than the temperature of the first refrigerant;
The substrate processing apparatus according to claim 11. The material of the second refrigerant is different from the material of the first refrigerant,
The substrate processing apparatus according to claim 11. The first refrigerant flow path is
having an entrance in a central region of the substrate support;
having an outlet in an edge region of the substrate support;
having a first cross-sectional area in the central region;
having a second cross-sectional area in the edge region;
having a third cross-sectional area smaller than the first cross-sectional area and the second cross-sectional area in an intermediate area located between the central area and the edge area in the substrate support part;
The second refrigerant flow path is
having an entrance in the edge region;
having an outlet in the central region;
having a fourth cross-sectional area in the central region;
having a fifth cross-sectional area in the edge region;
having a sixth cross-sectional area smaller than the fourth cross-sectional area and the fifth cross-sectional area in the intermediate region;
The substrate processing apparatus according to any one of claims 11 to 16. a chamber;
a substrate support disposed within the chamber and including a lower electrode;
an upper electrode disposed above the substrate support, where plasma is formed between the substrate support and the upper electrode;
A temperature control member disposed above the upper electrode, the temperature control member including a first refrigerant flow path and a temperature control member disposed above the first refrigerant flow path along the first refrigerant flow path. a temperature control member having a second refrigerant flow path formed therein;
A first chiller unit connected to the first refrigerant flow path and configured to control at least one of the temperature, flow rate, and flow direction of the first refrigerant flowing through the first refrigerant flow path. and,
At least one of the temperature, flow rate, and flow direction of the second refrigerant connected to the second refrigerant flow path and flowing through the second refrigerant flow path is controlled independently of the control of the first refrigerant. a second chiller unit configured to control the
Plasma processing equipment. A substrate processing method performed in a substrate processing apparatus, comprising:
The substrate processing apparatus includes:
a chamber;
A substrate support part disposed in the chamber and having a substrate support surface, the substrate support part including a substrate temperature control member, and the substrate temperature control member includes a substrate support part formed below the substrate support surface. a substrate support section having one refrigerant flow path and a second refrigerant flow path formed below the first refrigerant flow path along the first refrigerant flow path;
The substrate processing method includes:
placing a substrate on the substrate support surface;
processing the substrate on the substrate support surface;
controlling at least one of the temperature, flow rate, and flow direction of the first coolant flowing through the first coolant flow path while processing the substrate on the substrate support surface;
While processing the substrate on the substrate support surface, controlling at least one of the temperature, flow rate, and flow direction of the second coolant flowing in the second coolant flow path with respect to the first coolant. and a step of controlling independently of the
Substrate processing method.