JP2023510980A - Semiconductor device incorporating quantum dots - Google Patents

Abstract

SUMMARY According to one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device is a plurality of light emitting devices comprising a first light emitting device, a second light emitting device and a third light emitting device, each of the plurality of light emitting devices having a first ohmic contact and a second ohmic contact. and a light conversion device having embedded quantum dots, wherein a first portion of the light conversion device converts light generated by the first light emitting device to light of a first color. and a second portion of the light conversion device comprises a second plurality of quantum dots for converting light generated by the second light emitting device into light of a second color. a light conversion device comprising dots, wherein the third light emitting device emits light of a third color.
[Selection drawing] Fig. 5C

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application is related to U.S. Patent Application Serial No. 62/964,101, entitled "Light Emitting Devices Incorporating Quantum Dots," filed January 21, 2020, January 31, 2020. U.S. patent application Ser. No. 63/002,757 entitled "Protective Layers for Conversion Devices", each of which is hereby incorporated by reference in its entirety.

TECHNICAL FIELD Implementations of the present disclosure relate generally to semiconductor devices, and more particularly to semiconductor devices incorporating quantum dots (QDs) and methods of making the same.

Quantum dots (QDs) are semiconductor particles of nanoscale size. When the QD is illuminated by light, electrons within the QD can be excited to higher energy states. Therefore, the QDs can emit light of specific wavelengths. QDs of different shapes, sizes, compositions, etc. can emit different wavelengths of light. For example, relatively large QDs can emit relatively long wavelength light, and relatively small QDs can emit relatively short wavelength light.

The following is a simplified summary of the disclosure in order to provide a basic understanding of some aspects of the disclosure. This summary is not an extensive overview of the disclosure. It is not intended to identify key or critical elements of the disclosure or to delineate the scope of any particular implementation of the disclosure or the scope of any claims. Its sole purpose is to present some concepts of the disclosure in a simplified form as a prelude to the more detailed description that is presented later.

SUMMARY According to one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device is a light emitting structure comprising a first light emitting device, a second light emitting device and a third light emitting device, each of the first light emitting device, the second light emitting device and the third light emitting device is a light conversion device comprising a light emitting structure with a first ohmic contact and a second ohmic contact and one or more porous structures with embedded quantum dots, the first portion of the light conversion device comprises a first plurality of quantum dots for converting light generated by the first light emitting device into light of a first color, a second portion of the light converting device being converted by the second light emitting device a light conversion device comprising a second plurality of quantum dots for converting the generated light into light of a second color, the third light emitting device emitting light of a third color.

In some embodiments, the first plurality of quantum dots are disposed within the first plurality of pores of the first portion of the photoconverting device and the second plurality of quantum dots are disposed within the first portion of the photoconverting device. Arranged in the second part.

In some embodiments, at least one of the first plurality of pores has a diameter of 500 nm or less and at least one of the first plurality of pores has a depth of 1 μm or more. In some embodiments, the diameter of at least one of the first plurality of pores is 1 nm or greater.

In some embodiments, the semiconductor device further comprises a protective structure overlying the surface of one or more of the quantum dots embedded in the plurality of nanoporous structures.

In some embodiments, the semiconductor device further includes a protective structure disposed between the light emitting structure and the plurality of nanoporous structures.

In some embodiments, the first portion of the light conversion device and the second portion of the light conversion device are separated by a trench, and at least one sidewall of the trench is coated with a metallic material.

In some embodiments, the semiconductor device further includes a scattering medium configured to cause scattering of at least some of the light generated by the light emitting structure.

In some embodiments, sidewalls of the semiconductor device are coated with a reflective material.

In some embodiments, one or more porous structures are not in direct contact with multiple light emitting devices.

In some embodiments, the first color is red, the second color is green, and the third color is blue.

In some embodiments, the dimension of the first portion of the light conversion device is 100 μm or less (eg, about 100 μm or less than 100 μm).

In some embodiments, the dimension of the first portion of the light conversion device is 50 μm or less (eg, about 50 μm or less than 50 μm).

According to one or more aspects of the present disclosure, a method of manufacturing a semiconductor device is provided. The method is a light emitting structure comprising a first light emitting device, a second light emitting device, and a third light emitting device, each of the first light emitting device, the second light emitting device, and the third light emitting device , a first ohmic contact and a second ohmic contact; and a light conversion device comprising one or more porous structures with embedded quantum dots, the light conversion device comprising: One portion comprises a first plurality of quantum dots for converting light generated by a first light emitting device into light of a first color, and a second portion of the light conversion device comprises a second A light conversion device comprising a second plurality of quantum dots for converting light generated by the light emitting device into light of a second color, the third light emitting device emitting light of a third color. and the step of

In some embodiments, providing a photoconverting device comprises disposing a first plurality of quantum dots in a first portion of the photoconverting device; arranging a plurality of quantum dots.

In some embodiments, disposing the first plurality of quantum dots in the first portion of the photoconversion device uses at least one of photolithography or inkjet printing.

In some embodiments, the method further comprises forming a protective structure overlying the surface of one or more of the quantum dots embedded in the one or more porous structures.

In some embodiments, providing a light conversion device comprising one or more porous structures with embedded quantum dots comprises forming a plurality of nanoporous structures separated by a plurality of trenches; and coating at least one sidewall of at least one of the trenches with a metallic material.

In some embodiments, the method further comprises attaching the light emitting structure to the light conversion device.

The present disclosure will be better understood from the detailed description given below and the accompanying drawings of various embodiments of the present disclosure. The drawings, however, should not be construed as limiting the disclosure to the particular embodiments, but are for illustration and understanding purposes only.

FIG. 1A is a block diagram illustrating structures associated with an exemplary process for manufacturing light conversion devices according to some embodiments of the present disclosure. FIG. 1B is a block diagram illustrating structures associated with an exemplary process for manufacturing light conversion devices according to some embodiments of the present disclosure. FIG. 1C is a block diagram illustrating structures associated with an exemplary process for manufacturing light conversion devices according to some embodiments of the present disclosure. FIG. 1D is a block diagram illustrating structures associated with an exemplary process for manufacturing light conversion devices according to some embodiments of the present disclosure.

FIG. 2A is a cross-sectional scanning electron microscope (SEM) image of an exemplary light conversion device, according to one or more aspects of the disclosure.

FIG. 2B shows a photoluminescence (PL) spectrum of an exemplary light conversion device, according to one or more aspects of the disclosure.

FIG. 3A is a schematic diagram illustrating an example semiconductor device incorporating quantum dots according to some embodiments of the present disclosure. FIG. 3B is a schematic diagram illustrating an example semiconductor device incorporating quantum dots according to some embodiments of the present disclosure. FIG. 3C is a schematic diagram illustrating an example semiconductor device incorporating quantum dots according to some embodiments of the present disclosure. FIG. 3D is a schematic diagram illustrating an example semiconductor device incorporating quantum dots according to some embodiments of the present disclosure. FIG. 3E is a schematic diagram illustrating an example semiconductor device incorporating quantum dots according to some embodiments of the present disclosure.

FIG. 4A is a schematic diagram illustrating an exemplary light emitting structure according to some embodiments of the present disclosure;

FIG. 4B is a schematic diagram illustrating an example of a semiconductor device including a flip-chip light emitting structure according to some embodiments of the present disclosure; FIG. 4C is a schematic diagram illustrating an example of a semiconductor device including a flip-chip light emitting structure according to some embodiments of the present disclosure; 4D is a schematic diagram illustrating an example of a semiconductor device including a flip-chip light emitting structure according to some embodiments of the present disclosure; FIG. 4E is a schematic diagram illustrating an example of a semiconductor device including a flip-chip light emitting structure according to some embodiments of the present disclosure; FIG. FIG. 4F is a schematic diagram illustrating an example semiconductor device including a flip chip light emitting structure according to some embodiments of the present disclosure. 4G is a schematic diagram illustrating an example of a semiconductor device including a flip-chip light emitting structure according to some embodiments of the present disclosure; FIG.

FIG. 5A is a schematic diagram illustrating exemplary structures and processes for fabricating semiconductor devices incorporating quantum dots disposed within nanoporous structures, according to some embodiments of the present disclosure. FIG. 5B is a schematic diagram illustrating exemplary structures and processes for fabricating semiconductor devices incorporating quantum dots disposed within nanoporous structures, according to some embodiments of the present disclosure. FIG. 5C is a schematic diagram illustrating exemplary structures and processes for fabricating semiconductor devices incorporating quantum dots disposed within nanoporous structures, according to some embodiments of the present disclosure. FIG. 5D is a schematic diagram illustrating exemplary structures and processes for fabricating semiconductor devices incorporating quantum dots disposed within nanoporous structures, according to some embodiments of the present disclosure. FIG. 5E is a schematic diagram illustrating exemplary structures and processes for fabricating semiconductor devices incorporating quantum dots disposed within nanoporous structures, according to some embodiments of the present disclosure.

FIG. 6 is a schematic diagram illustrating an example of a semiconductor device comprising a microsemiconductor device.

FIG. 7 is a schematic diagram illustrating an example of a display device according to some embodiments of the disclosure.

FIG. 8 illustrates exemplary structures and processes for manufacturing light conversion devices according to some embodiments of the present disclosure.

FIG. 9 is a flowchart illustrating an exemplary process for forming porous structures according to some embodiments of the present disclosure;

FIG. 10 is a flowchart illustrating an example process for forming nanoporous structures according to one or more aspects of the present disclosure.

FIG. 11 is a flowchart illustrating an example process for forming a light conversion device according to one or more aspects of the disclosure.

FIG. 12 is a flowchart illustrating an example process for forming a light emitting device according to one or more aspects of the disclosure.

FIG. 13 is a flowchart illustrating an example process for forming a semiconductor device that includes multiple light emitting devices according to one or more aspects of the disclosure.

FIG. 14 is a flowchart illustrating an example process for manufacturing a display device according to one or more aspects of the disclosure.

Aspects of the present disclosure provide semiconductor devices incorporating quantum dots (QDs) and methods of making the same. As an example, a semiconductor device according to the present disclosure can include multiple light emitting devices capable of producing light, such as a first light emitting device, a second light emitting device, and a third light emitting device. In some embodiments, light emitting devices may be and/or include light emitting diodes, laser diodes, and/or any other suitable device capable of producing light. In some embodiments, each of the light emitting devices may be and/or include a flip chip light emitting diode. A light emitting device can emit light of a particular color (eg, blue light). The semiconductor device may further include a plurality of nanoporous structures corresponding to the light emitting device. Each nanoporous structure may comprise one or more nanoporous materials with pores (e.g., voids) of nanoscale size (e.g., sizes on the order of 1 nm to 1000 nm or larger); Quantum dots disposed within the nanoporous material may be included to convert light generated by one or more of the light emitting devices corresponding to the porous structure. For example, the first nanoporous structure may include first quantum dots for converting light produced by the first light emitting device into red light. The second nanoporous structure may include second quantum dots for converting light produced by the second light emitting device into green light. A third nanoporous structure that does not contain quantum dots can correspond to a third light emitting device. Light (eg, blue light) generated by the third light emitting device can pass through the third nanoporous structure. In some embodiments, the nanoporous structures are separated by one or more trenches coated with a suitable material to prevent and/or reduce optical crosstalk between adjacent nanoporous structures. may

According to one or more aspects of the present disclosure, displays incorporating light conversion devices as described herein and methods for making displays are provided. Conventional solutions for fabricating micro-sized light-emitting diode (e.g., micro-LED)-based displays typically employ micro-LEDs that emit red light (also "red micro-LEDs") from their respective original wafers. ), green light-emitting micro-LEDs (also called “green micro-LEDs”), and blue light-emitting micro-LEDs (also called “blue micro-LEDs”). For example, conventional solutions typically involve preparing a wafer containing blue micro-LEDs, a wafer containing red micro-LEDs, and a wafer containing green micro-LEDs, respectively. Blue micro-LEDs, red micro-LEDs, and green micro-LEDs are then picked up from their respective wafers for transfer to a display substrate (eg, a thin film transistor (TFT) backplane). That is, blue micro-LEDs, red micro-LEDs, and green micro-LEDs are first fabricated on respective wafers, then sorted and separated to form pixels of red micro-LEDs, green micro-LEDs, and blue micro-LEDs. transferred to the display substrate. Therefore, conventional solutions for manufacturing micro-LED-based displays involve complicated processes for dicing, sorting, and transporting blue, red, and green micro-LEDs.

The present disclosure provides methods for manufacturing displays that address the above and other shortcomings of conventional solutions. For example, a plurality of microsemiconductor devices emitting different colors of light may be provided on a first substrate. For example, the microsemiconductor devices include a first plurality of microsemiconductor devices that emit red light, a second plurality of microsemiconductor devices that emit green light, and a third plurality of microsemiconductor devices that emit blue light. may contain. A microsemiconductor device may correspond to a plurality of pixels. Each of the pixels may include one of the first plurality of microsemiconductor devices, one of the second plurality of microsemiconductor devices, and one of the third plurality of microsemiconductor devices. good. The first substrate may be and/or include a growth substrate for growing gallium nitride (GaN) and/or other materials of light emitting devices (eg, light emitting diodes). For example, the first substrate may comprise sapphire, silicon carbide (SiC), silicon (Si), quartz, gallium arsenide (GaAs), aluminum nitride (AlN), GaN, and the like. In some embodiments, the first substrate may include a silicon wafer with CMOS drivers. A pixel formed by a microsemiconductor device may correspond to a pixel of a display.

The microsemiconductor device can then be transferred from the first substrate to a second substrate (eg, a display module of a display). In one implementation, the second substrate may comprise driver circuitry (eg, one or more CMOS drivers, TFTs, etc.). In another implementation, the second substrate does not include driver circuitry. The second substrate may comprise a plurality of conductive lines (eg, rows and/or columns of conductive lines). Transferring the microsemiconductor device includes picking up the microsemiconductor device and the first substrate (e.g., using an array of electrostatic transfer heads; using a laser beam to transfer a plurality of microsemiconductor devices; separating (such as by illuminating the device). A microsemiconductor device can then be formed on the second substrate. Therefore, the microsemiconductor devices do not need to be diced or sorted in order to be transferred onto a second substrate for manufacturing displays.

Examples of embodiments of the present disclosure are described in more detail below with reference to the accompanying drawings. It should be understood that the following embodiments are given by way of illustration only to provide those skilled in the art with a thorough understanding of the present disclosure. Accordingly, the disclosure is not limited to the following embodiments, which may be embodied in different ways. Additionally, it should be noted that the drawings are not to scale and some dimensions such as width, length and thickness may be exaggerated for clarity of illustration in the figures. Like reference numerals refer to like elements throughout the specification.

1A, 1B, and 1C, structures for an exemplary process for manufacturing light conversion devices according to some embodiments of the present disclosure are shown. As shown in FIG. 1A, a solid material 110 may be obtained to manufacture a light conversion device according to the present disclosure. Solid material 110 may be fabricated into a porous structure (also referred to herein as a "nanoporous structure") comprising a nanoporous material.

For example, solid material 110 can be fabricated into a porous structure 120, as shown in FIG. 1B. In some embodiments, porous structure 120 may be manufactured by etching solid material 110 using chemical etching or any other suitable etching technique. Porous structure 120 can comprise a nanoporous material with pores. As shown in FIG. 1B, porous structure 120 can include a matrix structure 121 with solid material and pores 123 . Matrix structure 121 is also referred to herein as a "nanoporous material." Each of the pores 123 can have a nanoscale size (eg, a size on the order of 1 nm to 1000 nm or more). The porosity of the porous structure 120 and/or the nanomaterial (eg, the ratio of the volume of the pores 123 to the total volume of the porous structure 120) can be in the range of 10% to 90%. In some embodiments, the porosity of porous structure 120 may be between about 10% and about 80%. In some embodiments, the dimensions (eg, diameter, depth) of pores 123 may be 10 nm or greater. In some embodiments, the diameter of pores 123 may be between about 5 nm and about 100 nm. In some embodiments, the diameter of pores 123 may be between about 1 nm and about 500 nm. In some embodiments, the diameter of pores 123 is 500 nm or less. In some embodiments, the diameter of pores 123 may be between about 10 nm and about 20 nm. In some embodiments, the depth of pores 123 may be about 1 μm or greater. Pores 123 may be distributed in three-dimensional space.

As shown in FIG. 1C, one or more quantum dots (QDs) can be placed within the porous structure 120 to fabricate the photoconversion device 130 . For example, QDs may be loaded into the porous structure 120 by infiltrating the porous structure 120 and/or the nanoporous material with a QD-containing liquid (toluene, polydimethylsiloxane (PDMS), etc.). Since pores 123 are distributed in three-dimensional space, QDs can be loaded into the three-dimensional space occupied by pores 123 .

The QDs may be and/or include nanoscale-sized semiconductor particles (also called “nanoparticles”). Each of the QDs may comprise one or more of ZnS, ZnSe, CdSe, InP, CdS, PbS, InP, InAs, GaAs, GaP, etc., for fabricating QDs for implementing light conversion devices according to the present disclosure. Any suitable semiconductor material that can be used can be included. The multiple QDs disposed in the porous structure 120 may or may not contain the same semiconductor material.

Each QD can have a suitable core-shell structure, which can include a core and/or one or more shells. The core and shell may or may not contain the same semiconductor material. As an example, one or more of the QDs can have a core comprising a suitable semiconductor material. As another example, one or more of the QDs may have a core comprising a first semiconductor material (eg, CdS) and a shell comprising a second semiconductor material (eg, ZnS). As a further example, one or more of the QDs may have a core (eg, a CdSe core) and multiple shells (eg, a first shell comprising ZnSe, a second shell comprising ZnS). Multiple QDs arranged within a porous structure may or may not have the same core-shell structure.

When excited by electricity or light, QDs can emit light of a particular wavelength and/or range of wavelengths (also called the QD's “emission wavelength”). More specifically, for example, a QD can absorb one or more photons having wavelengths shorter than the QD's emission wavelength. Different QDs (eg, QDs of different shapes, sizes, and/or materials) can emit different wavelengths of light. For example, relatively large QDs can emit relatively long wavelength light, and relatively small QDs can emit relatively short wavelength light.

In some embodiments, QDs of different emission wavelengths may be placed in porous structures and/or nanoporous materials to achieve mixed-color emission. For example, as shown in FIG. 1C, the QDs disposed in the porous structure 120 may be one or more QDs 131 (also referred to as "first QDs") having a first emission wavelength, a second emission wavelength QDs 131, 133, which may include one or more QDs 133 (also called "second QDs") having a third emission wavelength (also called "third QDs"), etc. and/or 135 can have different sizes, shapes, compositions, etc. to achieve different emission wavelengths. QDs 131, 133, and/or 135 may or may not include different materials. In one implementation, QDs 131, 133, and/or 135 comprise different semiconductor materials.

When excited by light 141, the first QD can convert light 141 to light 143 of a first emission wavelength. A second QD can convert light 141 to light 145 at a second emission wavelength. A third QD can convert light 141 into light 147 at a third emission wavelength. Light 141 can be produced by any light source capable of producing light. Examples of light sources can include one or more light emitting diodes, laser diodes, or the like. In some embodiments, light 141 can have a wavelength no longer than the first emission wavelength, the second emission wavelength, and/or the third emission wavelength. In some embodiments, light 141 may be and/or include white light. Lights 143, 145, and 147 may have different colors (eg, red light, green light, blue light).

As shown in FIG. 1C, the first QDs, the second QDs, and the third QDs can be disposed in different portions of the porous structure 120 (e.g., each first portion of the porous structure 120 , second part, and third part). Each portion of the porous structure can include multiple layers of QDs loaded into a three-dimensional space formed by one or more portions of pores 123 .

According to one or more aspects of the disclosure, a light conversion device is provided. A light conversion device can include a porous structure and a plurality of QDs disposed in the porous structure. The porous structure can contain one or more nanoporous materials. Nanoporous materials and/or porous structures can include matrix structures comprising one or more semiconductor materials (Si, GaN, AlN, etc.), glasses, plastics, metals, polymers, and the like. Nanoporous materials and/or porous structures may further comprise one or more pores and/or voids.

The plurality of QDs comprises one or more first QDs having a first emission wavelength (also referred to herein as the "first plurality of QDs"), one or more a second QD (also referred to herein as a "second plurality of QDs"), one or more third QDs having a third emission wavelength (herein a "third plurality of QDs") can include QDs with different emission wavelengths, such as QDs. The first QD, second QD, and third QD may or may not have the same size, shape, and/or material. In some embodiments, one or more of the first QDs can have a first size and/or a first shape. One or more of the second QDs can have a second size and/or a second shape. One or more of the third QDs can have a third size and/or a third shape. In one implementation, the first size may be different than the second size and/or the third size. In one implementation, the first shape may be different than the second shape and/or the third shape. In one implementation, one or more of the first QDs, second QDs, and/or third QDs may comprise different materials.

A light conversion device can convert light of a particular wavelength into one or more desired wavelengths of light (e.g., convert shorter wavelength light into longer wavelength(s) of light). be able to). In some embodiments, the light conversion device converts a first color of light into one or more of a second color of light, a third color of light, a fourth color of light, etc. be able to. The first color, second color, third color, and fourth color can correspond to the first, second, third, and fourth wavelengths, respectively. In some embodiments, the first color is different than the second color, third color, and/or fourth color. In some embodiments, the second color, third color, and fourth color may correspond to red, green, and blue, respectively. In some embodiments, the first color of light comprises violet light.

Referring to FIG. 1D, an example light conversion device 150 is shown according to some embodiments of the present disclosure. As shown, the light conversion device 150 can comprise a plurality of QDs and a protective structure 155 arranged within a nanoporous structure. The QDs may include QDs 131, 133, and 135 as described in connection with FIG. 1C. The nanoporous structure may be and/or include the porous structure 120 of FIG. 1B. As noted above, the nanoporous structure can include nanoporous material 121 and pores 123 .

A protective structure can include one or more materials (eg, organic materials, inorganic materials) and can protect the QDs from oxygen, water, moisture, and/or other environmental factors. The protective structure can also prevent chemical degradation of the QDs and can enhance the stability of the photoconversion device.

In some embodiments, protective structure 155 may include a first protective layer 155a covering the surface of the QDs disposed within the nanoporous structure. The first protective layer 155a may be and/or include a coating on the surface of the QDs within the nanoporous structure. As an example, the protective layer 155a can be formed by spin coating or spraying a liquid phase protective layer onto the surface of the porous structure. The liquid phase protective layer can then flow inside the nanoporous structure. The coating can prevent oxidation of the QDs and/or protect the QDs from other environmental factors, such as polydimethylsiloxane (PDMS), poly(methyl methacrylate) (PMMA), epoxy, one or more can include materials. In some embodiments, the first protective layer 155a can also include a layer of a first material formed over the nanoporous structure, as shown in FIG. 1D. Note that the coating over the QDs is not shown in FIG. 1D.

Protective structure 155 may further include a protective layer 155b (also referred to as a “second protective layer”). Protective layer 155b can include one or more materials that can protect the QDs from oxygen, moisture, and/or other environmental factors. For example, protective layer 155b can include _one or more layers of _SiO2 , SiN, _Al2O3 , PDMS, PMMA, and the like. A protective layer 155b may be formed over the protective layer 155a to provide additional protection to the QDs in the photoconversion device. Protective layers 155a and 155b may or may not comprise the same material.

In one implementation, the protective layer 155a and/or the coating of QDs includes the first material. Protective layer 155b includes a second material different from the first material. Examples of the first material can include PDMS, PMMA, epoxy, and the like. Examples of the second material can include _SiO2 , SiN, _Al2O3 , and _the like. In another implementation, the protective layers 155a-155b and/or the coating of the QDs may comprise common materials.

FIG. 2A is an SEM image of an exemplary light conversion device, according to one or more aspects of the disclosure. The light conversion device can comprise a porous structure comprising GaN (porous GaN) and QDs disposed within the porous structure and/or the porous GaN. As shown, when excited by incident light having a wavelength of about 420 nm, the light conversion device can convert the incident light to red light.

FIG. 2B shows a PL spectrum of an exemplary light conversion device, according to one or more aspects of the disclosure. As shown, the light conversion device can convert incident light having a wavelength of approximately 420 nm into green light (eg, light having an emission wavelength of 650 nm).

3A, 3B, 3C, 3D, and 3E illustrate example semiconductor devices 300a, 300b, 300c, 300d, and 300e, respectively, according to some embodiments of the present disclosure. A semiconductor device can include a light conversion device as described herein. Semiconductor devices may be used to manufacture light emitting diodes, laser diodes, transistor solar cells, and/or any other suitable semiconductor device. Semiconductor devices can be used to implement display applications, lighting applications, data storage applications, power electronics applications, communication applications, and the like. The semiconductor device may be and/or include a flip-chip LED, a vertical LED, a lateral LED, and/or the like. The semiconductor device may be and/or include a light emitting device capable of emitting light. In some embodiments, a semiconductor device may have dimensions on the micrometer scale (also referred to as a "microsemiconductor device").

As shown in FIGS. 3A and 3B, semiconductor devices 300a and/or 300b may include a light emitting structure 310, a light conversion device 320, ohmic contacts 331 and 335, and/or any other components for implementing a light emitting device according to the present disclosure. Other suitable components can be included.

Light emitting structure 310 may include one or more layers of semiconductor material and/or any other suitable material for generating light. For example, light emitting structure 310 can include one or more epitaxial layers of III-V materials (eg, GaN), one or more quantum well structures, and the like. In some embodiments, light emitting structure 310 may include one or more of the components described in connection with FIG. 4A.

The light conversion device 320 may be and/or include QDs disposed within one or more of the nanoporous structures described in connection with FIGS. 1A-2B.

Ohmic contacts 331 and 335 (eg, n-pad and p-pad) may be deposited on light emitting structure 310 . An ohmic contact 331 may be deposited on the n-doped layer (eg, layer 420 in FIG. 4A). Ohmic contact 335 may be deposited on the p-doped layer (eg, layer 440 in FIG. 4A). Ohmic contacts 331 and 335 can include any suitable metal. For example, ohmic contacts 331 and 335 may include nickel (Ni) and gold (Au), respectively.

In one implementation, ohmic contacts 331 and 335 may be deposited on the same side of light emitting structure 310 . For example, ohmic contacts 331 and 335 may be deposited on a first surface of light emitting structure 310, as shown in FIG. 3A. The light conversion device 320 and/or the porous structure of the light conversion device 320 may be formed on a second side of the light emitting structure 310 opposite the first side. In some embodiments, forming a light conversion device includes performing one or more operations as described in FIGS. 1A-1D and 5A-5B and/or other aspects of the present disclosure. may include fabricating the light conversion device by. Alternatively or additionally, as discussed in more detail below, the formation of the light conversion device can include (e.g., adhering the light conversion device to the light emitting structure or attaching the light conversion device to the light emitting structure Attaching the fabricated light conversion device to the light emitting structure 310 (by using any other suitable technique) may also be included. In some embodiments, semiconductor device 300a may include one or more of the components described below in connection with FIGS. 4B-4C.

In another implementation, ohmic contacts 331 and 335 may be deposited on different sides of light emitting structure 310 to form a vertical light emitting structure. The vertical light emitting structure enables vertical current flow from the p-type ohmic contact to the n-type ohmic contact (e.g., between opposing surfaces and/or surfaces of the semiconductor device 300b, such as top and bottom surfaces). can be done. For example, ohmic contacts 331 and 335 may be deposited on opposite sides of light emitting structure 310, as shown in FIG. 3B. The light conversion device 320 and the first ohmic contact 331 may be formed on the same side of the light emitting structure 310 . Semiconductor device 300 b may also include a support structure 340 . Support structure 340 may comprise a metal structure implemented with a suitable bonding material (eg, Au—Sn alloy). Metal structures may include Si, W, Ta, and/or any other suitable material. Support structure 340 may refer to semiconductor device 300b as a metal support structure and/or substrate.

A light conversion device 320 may be formed on the light emitting structure 310 . For example, as shown in FIG. 3A, light conversion device 320 may be formed on surface 313 corresponding to the first side of light emitting structure 310 . Ohmic contacts 331 and 335 are formed on one or more surfaces of light emitting structure 310 corresponding to the second side of light emitting structure 310 . The first surface and the second surface may correspond to opposing surfaces (eg, top and bottom surfaces) of the light emitting structure 310 . As another example, ohmic contact 331 and light conversion device 320 are formed on a first side of light emitting structure 310 and ohmic contact 335 is provided on a second side of light emitting structure 310, as shown in FIG. 3B.

Light conversion device 320 may or may not be in direct contact with light emitting structure 310 . In some embodiments, light conversion device 320 and the porous structure of light conversion device 320 are not in direct contact with light emitting structure 310 . For example, the emissive structure and porous structure may be separated by a space. As another example, a support layer may be formed between the light emitting structure and the light conversion device. The support layer may include _Al2O3 , _GaN , and/or any other suitable material.

In some embodiments, one or more sidewalls of semiconductor device 300 may be coated with one or more reflective materials to reflect light generated by semiconductor device 300 toward semiconductor device 300. . The one or more reflective materials can include metals such as Ag, Al, Ni, Ti.

In some embodiments, the photoconversion device 320 of FIGS. 3A and 3B can include protective structures to protect the QDs. For example, as shown in FIG. 3C, a semiconductor device 300c according to the present disclosure can include light emitting structure 310, light converting device 320, and ohmic contacts 331 and 335. FIG. The light emitting device 300c can include a QD-embedded nanoporous structure 321 and a protective structure 323. FIG. The QDs may include QDs 131, 133, and/or 135 as described in connection with FIG. 1C. In some embodiments, the QDs include QDs 131 and 133 as described in connection with FIG. 1C. Nanoporous structure 321 may be and/or include porous structure 120 of FIG. 1B. As noted above, nanoporous structure 321 can include nanoporous material 121 and pores 123 . Protective structure 323 may be and/or include protective structure 155 as described in connection with FIG. 1D. ). In some embodiments, semiconductor device 300c may include one or more of the components described below in connection with FIGS. 4B-4C.

In some embodiments, one or more scattering media may be placed between the light conversion device 320 and the light emitting structure 310 to further increase the internal scattering and effective path of light traveling within the semiconductor device. Well, this can further improve the light conversion efficiency of the light conversion device disclosed herein. Scattering medium 350 a may include any suitable material that causes scattering of one or more portions of light generated by light emitting structure 310 . For example, scattering media can include SiO ₂ , SiN, polymers, xerogels, and the like. A scattering medium can comprise one or more porous materials (eg, porous SiO ₂ , porous SiN, xerogels, etc.). In some embodiments, the porous material can include pores with dimensions between 52 and 400 nanometers. Scattering media can be formed by using chemical etching, physical film coating processes, and/or any other suitable technique. In some embodiments, the thickness of the scattering medium may be between 1 μm and 1 mm.

By way of example, as shown in FIG. 3D, semiconductor device 300d may include light emitting structure 310, light converting device 320, scattering medium 350a, and/or any other suitable components. In some embodiments, semiconductor device 300d may include one or more of the components described below in connection with FIGS. 4D-4E.

In some embodiments, the scattering medium may have a different size and/or shape than the light emitting structure 310 and/or the light conversion device 320. For example, one or more dimensions (eg, length, width, height, etc.) of the scattering medium may be larger than the dimensions of light emitting structure 310 . As a more specific example, scattering medium 350b may be disposed on surface 351 of light emitting structure 310, as shown in FIG. 3E. Light conversion device 320 may be formed on surface 353 of scattering medium 350b. The sizes of surfaces 351 and 353 may be different. In some embodiments, surface 353 is larger than surface 351 . Surface 351 may correspond to surface 411 of FIG. 4F and/or surface 415 of FIG. 4G. Surface 353 may correspond to surface 413 of FIG. 4F and/or surface 417 of FIG. 4G. In some embodiments, the scattering media described herein may be considered part of light conversion device 320 . In some embodiments, semiconductor device 300e may include one or more of the components described below in connection with FIGS. 4F-4G.

Referring to FIG. 4A, an example of a light emitting structure 310 is shown according to some embodiments of the present disclosure. As shown, light emitting structure 310 can include growth template 410 , first semiconductor layer 420 , second semiconductor layer 430 , and third semiconductor layer 440 .

Growth template 410 may include one or more epitaxial layers of III-V materials grown on growth template 410 and/or foreign substrates. The heterogeneous substrate can be sapphire, silicon carbide (SiC), silicon (Si), quartz, gallium arsenide (GaAs), aluminum nitride (AlN), or any other suitable material that can be used to grow III-V materials. It can contain crystalline material. In some embodiments, light emitting structure 310 does not include growth template 410 .

First semiconductor layer 420 may include one or more epitaxial layers of III-V materials and any other suitable semiconductor material. For example, first semiconductor layer 420 may include an epitaxial layer of a III-V material (also referred to as a "first epitaxial layer of III-V material"). The III-V material may be GaN, for example. The first epitaxial layer of III-V material may comprise III-V material doped with a first conductivity type impurity. The first conductivity type impurity may be an n-type impurity in some embodiments. The first epitaxial layer of III-V material may be a Si-doped GaN layer or a Ge-doped GaN layer in some embodiments. First semiconductor layer 420 may also include one or more epitaxial layers of III-V materials that are not doped with any particular conductivity type impurity.

Second semiconductor layer 430 may include one or more layers of semiconductor material and/or any other suitable material for emitting light. For example, semiconductor layer 430 may include an active layer with one or more quantum well structures for emitting light. Each of the quantum well structures may be and/or include a single quantum well structure (SQW) and/or a multiple quantum well (MQW) structure. Each quantum well structure can include one or more quantum well layers and barrier layers (not shown in FIG. 4A). The quantum well layers and barrier layers may be alternately stacked. The quantum well layers can include indium (eg, indium gallium nitride). Each of the quantum well layers may be an undoped layer of indium gallium nitride (InGaN) that is intentionally undoped with impurities. Each of the barrier layers may be an undoped layer of III-V material that is intentionally undoped with impurities. A pair of barrier layers (eg, GaN layers) and quantum well layers (eg, InGaN layers) may be considered a quantum well structure. Second semiconductor layer 430 may include any suitable number of quantum well structures. For example, the number of quantum well structures (eg, pairs of InGaN and GaN layers) may be 3, 4, 5, and so on.

When energized, the second semiconductor layer 430 can generate light. For example, when current flows through the active layer, electrons from the first semiconductor layer 420 (e.g., n-doped GaN layer) are transferred from the third semiconductor layer 440 (e.g., p-doped GaN layer) in the active layer. It can combine with holes. The combination of electrons and holes can generate light. In some embodiments, the second semiconductor layer 430 is capable of producing a specific color of light (eg, a specific wavelength of light).

Third semiconductor layer 440 may include one or more epitaxial layers of III-V materials and/or any other suitable material. For example, the third semiconductor layer 440 can include an epitaxial layer of III-V material (also referred to as a "second epitaxial layer of III-V material"). The second doped layer of III-V material may be doped with a second conductivity type impurity that is different than the first conductivity type impurity. For example, the second conductivity type impurities may be p-type impurities. In some embodiments, the second epitaxial layer of III-V material may be doped with magnesium.

Although specific layers of semiconductor material are shown in FIG. 4A, this is merely exemplary. For example, between the two semiconductor layers of FIG. 4A (eg, between the first semiconductor layer 420 and the second semiconductor layer 430, between the second semiconductor layer 430 and the third semiconductor layer 440, etc.) One or more intervening layers may or may not be formed. In one implementation, the surface of first semiconductor layer 420 may be in direct contact with the surface of second semiconductor layer 430 . In another implementation, one or more intervening layers (not shown in FIG. 4A) may be formed between the first semiconductor layer 420 and the second semiconductor layer 430 . One or more intervening layers (not shown in FIG. 4A) may be formed between first semiconductor layer 420 and growth template 410 . In some embodiments, first semiconductor layer 420 may comprise an undoped layer of III-nitride material. In some embodiments, semiconductor device 310 may include one or more layers of semiconductor material and/or any other material formed over third semiconductor layer 440 .

4B-4G, illustrated are example semiconductor devices 400b, 400c, 400d, 400e, 400f, and 400g that include flip-chip light emitting structures according to some embodiments of the present disclosure. As shown in FIGS. 4B and 4C, ohmic contacts 331 and 335 may be deposited on the surface of semiconductor layer 420 and on the surface of semiconductor layer 440, respectively. In some embodiments, a photoconversion device 320 may be formed on a growth template 410, as shown in FIG. 4B. As an example, one or more epitaxial layers comprising GaN or other suitable material can be grown on growth template 410 . One or more nanoporous structures are then applied to the epitaxial layer of GaN (eg, by forming one or more nanoporous structures as described in connection with FIGS. 1A-1D). may be formed. Suitable QDs may be loaded into the nanoporous structure, as described above. As another example, one or more nanoporous structures comprising nanoporous materials (eg, semiconductor materials, glasses, plastics, metals, polymers, etc.) may be formed on growth template 410 . The nanoporous structure may or may not be in direct contact with growth template 410 . In one implementation, the nanoporous structure is in direct contact with growth template 410 . In another implementation, the nanoporous structure is not in direct contact with growth template 410 . For example, the nanoporous structure and growth template 410 may be separated by a space. As another example, one or more layers (also referred to as “support layers”) of III-V materials (eg, GaN) and/or any other suitable material are formed on growth template 410. good too. A nanoporous structure may be formed on the support layer. Growth template 410 may be considered part of the support layer in some embodiments. In some embodiments, the formation of light conversion device 320 includes attaching light conversion device 320 to layers 410 and/or 420 (eg, by mounting light conversion device 320 to layers 410/420 and/or scattering media). Can include mounting.

In some embodiments, growth template 410 may be removed from light emitting structure 310 prior to photoconversion device 320 on semiconductor device 300, as shown in FIG. 4C. For example, one or more nanoporous structures may be formed on one or more of the first semiconductor layers 420 (eg, by etching a portion of the n-GaN layer to form the nanoporous structures). It may be formed in parts. As another example, one or more nanoporous structures comprising nanoporous materials (e.g., semiconductor materials, glasses, plastics, metals, polymers, etc.) may be formed on the first semiconductor layer 420. . The nanoporous structure may or may not be in direct contact with the first semiconductor layer 420 . In one implementation, the nanoporous structure is in direct contact with first semiconductor layer 420 . In another implementation, the nanoporous structure is not in direct contact with first semiconductor layer 420 . For example, the nanoporous structure and first semiconductor layer 420 may be separated by a space. As another example, one or more layers of III-V materials (eg, GaN) and/or any other suitable material (also referred to as “support layers”) are deposited on the first semiconductor layer 420. may be formed. A nanoporous structure may be formed on the support layer.

4D, 4E, 4F, and 4G, examples of semiconductor devices including scattering media according to some embodiments of the present disclosure are shown. As shown in FIGS. 4D and 4F, scattering media 350a and/or 350b, such as those described in connection with FIG. In some embodiments, one or more intervening layers of semiconductor material and/or any other suitable material may be formed between scattering medium 350 and growth template 410 .

As shown in FIGS. 4E and 4G, a scattering medium such as described with respect to FIG. In some embodiments, one or more intervening layers of semiconductor material and/or any other suitable material may be formed between scattering medium 350 and first semiconductor layer 420 .

As shown in FIGS. 4F and 4G, the scattering medium is separate from the light conversion device 320 and/or the light emitting structures (eg, layers 420, 430, 440, growth template 410, ohmic contacts 331 and 335, etc.) of the semiconductor device. They may have different sizes and/or shapes. For example, one or more dimensions of the scattering medium 350b may be larger than the dimensions of the light emitting structure. As a more specific example, scattering medium 350b may be disposed on surface 411 of growth template 410, as shown in FIG. 4F. Light conversion device 320 may be formed on surface 413 of scattering medium 350b. The sizes of surfaces 411 and 413 may be different. In some embodiments, surface 413 is larger than surface 411 . As another more specific example, scattering medium 350b may be disposed on surface 415 of first semiconductor layer 420, as shown in FIG. 4G. Light conversion device 320 may be formed on surface 417 of scattering medium 350b. Surfaces 415 and 417 may have different sizes. In some embodiments, surface 417 is larger than surface 415 .

5A-5E, exemplary structures and processes are provided for fabricating semiconductor devices incorporating quantum dots disposed within nanoporous structures, according to some embodiments of the present disclosure. . Each of the semiconductor devices may be and/or include a light emitting device capable of emitting light.

As shown in FIG. 5A, semiconductor device 500 can include one or more photoconversion devices as disclosed herein. As shown, a plurality of light emitting devices (LEDs) 520 (eg, one or more arrays of LEDs) may be formed on driver circuitry 510 of semiconductor device 500 . Each of the LEDs 520 can include the light emitting structure 310 of FIG. In some embodiments, the LEDs may be monolithic LEDs (eg, blue LEDs) capable of producing light of a particular color.

Driver circuitry 510 may be and/or include one or more electrical circuits for enabling individual electronic control of LEDs 520 . In some embodiments, driver circuitry 510 may include one or more CMOS drivers.

A nanoporous structure 530 may be formed in one or more of the LEDs 520 . Nanoporous structure 530 can include one or more nanoporous materials. In one implementation, the nanoporous structure 530 is formed by electrochemically etching one or more of the LEDs 520 (eg, by etching n-GaN layer(s) of one or more of the LEDs 520. by). In some embodiments, one or more of LEDs 520 are not electrochemically etched.

Quantum dots can be loaded into nanoporous structures. The quantum dots can include quantum dots of different emission wavelengths (eg, first QDs, second QDs, third QDs, etc., as described above). In some embodiments, quantum dots may be loaded using photolithographic methods, inkjet printing methods, and the like. As an example, QDs 540a and 540b may be loaded into respective portions of nanoporous structure 530 to produce an emission color. QDs 540a and 540b may have different emission wavelengths. For example, QD 540a can convert the light produced by 520 into red light. QD 540b can convert the light produced by LED 520 to green light.

According to one or more aspects of the present disclosure, a display device comprising micro-LEDs and a method for manufacturing the display device are provided. Display devices can be of any suitable size and can be any suitable computing device (e.g., watches, eyeglasses, contact lenses, mobile phones, head-mounted displays, tablet computing devices, laptops, desktops, televisions, extended reality (AR) devices, virtual reality (VR) devices, etc.). A display device can include one or more light conversion devices as described herein. Display devices can include microsemiconductor devices that can emit light of various colors (eg, red, green, blue, etc.). Each of the microsemiconductor devices can have dimensions on the micrometer scale and can include semiconductor devices 300a-300b as described in connection with FIGS. 3A-4G. In one implementation, the dimensions (eg, lateral dimensions) of the microsemiconductor device may be approximately 5-25 μm. In another implementation, the dimension (eg, lateral dimension) of the microsemiconductor device may be greater than 25 μm or less than 5 μm.

Returning to FIG. 5B, structures and processes for manufacturing a semiconductor device 550 according to some embodiments of the present disclosure are shown. Semiconductor device 550 may include light conversion device 560, light emitting structure 570, and/or any other suitable components.

Light conversion device 560 can include a porous structure 561 with embedded quantum dots. Porous structure 561 may be and/or include, for example, light conversion devices 130, 150, and/or 320 as described above. The embedded quantum dots can convert the light produced by light emitting structure 570 into light of a specific wavelength and/or color. In some embodiments, the embedded quantum dots have specific wavelengths and can convert the light produced by light-emitting structure 570 into specific colors (eg, blue, green, red). Light conversion device 560 may further include one or more layers 562 of solid material, such as semiconductor materials (eg, n-GaN layers, undoped GaN layers, etc.). In some embodiments, light conversion device 560 can include one or more scattering media 355a-b and/or protective structure 155 as described above. In some embodiments, solid material 562 and/or one or more portions of solid material 562 may be removed from porous structure 561 to form semiconductor device 550 .

Light emitting structure 570 may include one or more light emitting devices capable of emitting light. In some embodiments, light emitting structure 570 includes a plurality of light emitting devices 570a, 570b, 570c, . . . , 570n. Each of the light emitting devices 570a-n may be and/or include light emitting diodes, laser diodes, or the like. In some embodiments, each of the light emitting devices 570a-n may be and/or include a micro-sized light emitting diode (LED) (also referred to as a "micro LED"). Micro LEDs can have dimensions on the micrometer scale. In one implementation, the dimensions of the micro LEDs may be approximately 5-25 μm. In another implementation, the dimensions of the micro LEDs may be greater than 25 μm or less than 5 μm. Two light emitting devices 570a, 570b, 570c, . . . , 570n (eg, two adjacent light emitting devices 570a-n) may be 20 μm, 25 μm, or any other suitable value. In some embodiments, the pixel pitch may be 20 μm or greater. Pixel pitch is the distance between light emitting devices (e.g., the distance between the center of a first light emitting device and the center of a second light emitting device, the plane of the first light emitting device and the plane of the second light emitting device). , etc.).

Light emitting devices 570a-n may be formed on substrate 571 in some embodiments. Substrate 571 may be and/or include a growth substrate for manufacturing and/or supporting light emitting devices 570a-n. For example, substrate 571 may comprise sapphire, silicon carbide (SiC), silicon (Si), quartz, gallium arsenide (GaAs), aluminum nitride (AlN), gallium nitride (GaN), and the like. In some embodiments, substrate 571 may be and/or include a free-standing gallium nitride substrate that is free of foreign substrates. In some embodiments, substrate 571 may comprise a silicon wafer with CMOS drivers.

Light emitting devices 570a-n may be arranged in one or more arrays (eg, one or more columns and/or rows). Each of light emitting devices 570a-n may include one or more components of light emitting structure 310 of FIGS. 3A-4G and may include one or more ohmic contacts. In some embodiments, one or more of light emitting devices 570a-n may be monolithic LEDs (eg, blue LEDs) capable of emitting light of a particular color. One or more of the light emitting devices 570a-n may be micro LEDs. In some embodiments, each of light emitting devices 570a-n may include a flip-chip structure as described herein. Although a specific number of light emitting devices are shown in FIG. 5B, this is merely an example. It should be noted that light emitting structure 570 may include any suitable number of light emitting devices.

In some embodiments, the light conversion device 560 and/or the porous structure 561 are formed in one or more portions 561a, 561b, 561c, . . . , 561n. Portions 561a-n are also referred to herein as nanoporous structures 561a-n. Each of the nanoporous structures 561a-n may be and/or include a porous structure 120 as described above in connection with FIGS. 1A-1B. Each of the nanoporous structures 561a-n can include multiple pores. Each of the pores can have a nanoscale size. A first plurality of quantum dots (eg, first quantum dots 131 of FIG. 1C) may be disposed in a first plurality of pores of nanoporous structure 561a. A second plurality of quantum dots (eg, second quantum dots 135 of FIG. 1C) may be disposed in a second plurality of pores of nanoporous structure 561b. In one implementation, a third quantum dot may be disposed in nanoporous structure 561c. In another implementation, quantum dots are not disposed in nanoporous structure 561c.

In some embodiments, the distance between two adjacent nanoporous structures and/or portions of light conversion device 560 (eg, 561a and 561b) may be about 20 μm or less. In some embodiments, the dimensions of nanoporous structures 561a-n may be about 100 μm or less. For example, each nanoporous structure 561a-n can be represented by a square having sides of about 100 μm or less. In some embodiments, the dimensions of nanoporous structures 561a-n may be about 50 μm or less. For example, each nanoporous structure 561a-n can be represented by a square having approximately 50 μm. The dimensions of each of the trenches may be about 2 μm or less.

As shown, the nanoporous structures 561a-n may be separated by multiple structures 563a, 563b, etc. that can eliminate and/or reduce optical crosstalk between the nanoporous structures 561a-n. good. In some embodiments, structures 563a, 563b, etc. can include materials (eg, metals) that can eliminate and/or reduce optical crosstalk. In some embodiments, one or more of structures 563a, 563b, etc. are contiguous and/or contiguous nanoporous materials, such as metallic materials comprising aluminum, nickel, and/or any other suitable metal. The trenches may be and/or include trenches coated with a suitable material to prevent and/or reduce optical crosstalk between structures 561a-n.

According to some embodiments of the present disclosure, a method for manufacturing a semiconductor device 550 includes providing a light conversion device 560, providing a light emitting structure 570 capable of emitting light, Attachment to a light conversion device and/or any other suitable action may be included. Attaching the light emitting structure to the light conversion device may include attaching the light emitting structure to the light conversion device (eg, by bonding the porous structure 561 and/or the scattering medium to the substrate 571) using an adhesive or any other suitable technique. Bonding to a conversion device can be included.

In some embodiments, providing light conversion device 560 includes manufacturing light conversion device 560 by performing one or more of the operations described above in connection with FIGS. 1A-2B. be able to. As an example, providing light conversion device 560 may include providing solid material 580 for forming a nanoporous structure comprising the nanoporous material. In some embodiments, providing solid material 580 may include providing one or more epitaxial layers of GaN or any other suitable semiconductor material. For example, as shown in FIG. 5D, solid material 580 may include an n-doped layer 581 of semiconductor material (eg, an n-GaN layer), an undoped layer 583 of semiconductor material (eg, an undoped GaN layer), and/or It can include one or more layers comprising semiconductor material and/or any other suitable material. In some embodiments, layers 581 and/or 583 can be grown on growth template 585 . Growth template 585 may include a foreign substrate, one or more layers of semiconductor material, and/or any other suitable components. Foreign substrates can include any other suitable crystalline material that can be used to grow semiconductor material. In some embodiments, the foreign substrate is sapphire, SiC, Si, quartz, GaAs, AlN, and/or GaN and/or any other suitable material for growing III-V materials. Suitable materials can be included.

The porous structure 561 may be formed using a solid material 580, as shown in FIG. 5D. For example, porous structure 561 can be formed by electrochemically etching one or more portions of solid material 580 (eg, by etching one or more portions of layer 581). . In some embodiments, one or more portions of layer 581 are not electrochemically etched. In some embodiments, layer 583 and/or growth template 585 and/or one or more portions of layer 583 and/or growth template 585 are removed from solid material 580 to form light conversion device 560. may

Quantum dots can be placed in porous structure 561 using any suitable technique described herein. The quantum dots are composed of one or more first quantum dots having a first emission wavelength (e.g., first quantum dots 131 in FIG. 1C), one or more second quantum dots having a second emission wavelength. Quantum dots (eg, second quantum dot 135 in FIG. 1C), and the like can be included. A first quantum dot and a second quantum dot can be disposed in the first and second portions of the porous structure 561, respectively. For example, as shown in Figure 5D, a light conversion device 560 comprises nanoporous structures 561a, 561b, 561c, . . . , 561n can be divided into multiple parts to obtain sparseness. Nanoporous structures 561a-n can be formed, for example, by etching porous structure 561 to form trenches 563a, 563b, and the like.

The trenches 563a, 563b, etc. are suitable for preventing and/or reducing optical crosstalk between adjacent portions of the light conversion device, such as metallic materials including aluminum, nickel, and/or any other suitable metal. It may be coated with other materials. For example, as shown in FIG. 5D, the sidewalls and/or bottom of trench 563a may be coated with coating 565a. The sidewalls and/or bottom of trench 563b may be coated with coating 565b. In some embodiments, one or more of coatings 565a, 565b, etc. may cover a portion of the nanoporous structure adjacent to the trench. For example, as shown in FIG. 5D, coating 565b may cover a portion of porous structure 561c and/or a portion of porous structure 561b (eg, about 1 μm).

Referring to FIG. 5E, a schematic diagram illustrating a semiconductor device 555 according to some embodiments of the present disclosure is shown. Semiconductor device 555 may include light conversion device 560, light emitting structure 570, and/or any other suitable components.

Light emitting structure 570 may include light emitting devices 570a-570n as described in connection with FIG. 5C. Light emitting devices 570a-n may correspond to nanoporous structures 561a-n, respectively. A first quantum dot in nanoporous structure 561a can convert light generated by light emitting device 570a into light of a first color (eg, red light). The second quantum dots in nanoporous structure 561b can convert light generated by light emitting device 570b into light of a first color (eg, green light). Light (eg, blue light) generated by light emitting device 570c can pass through nanoporous structure 561c.

In some embodiments, semiconductor device 555 may further include protective structure 155 as described in connection with FIG. 1D (not shown in FIG. 5E). A protective structure 155 may be disposed between the nanoporous structures 561a-n and the light emitting structure 570. FIG.

FIG. 6 shows a schematic diagram illustrating an example semiconductor device 600 comprising a light emitting device according to some embodiments of the present disclosure. As shown, semiconductor device 600 can include a plurality of micro semiconductor devices 620 provided on substrate 610 . Each of the microsemiconductor devices may be and/or include a semiconductor device as described above in conjunction with FIGS. 3A-4G. In some embodiments, substrate 610 may be and/or include a growth substrate for growing GaN and/or any other material of the light emitting structure. For example, the first substrate may include sapphire, silicon carbide (SiC), silicon (Si), quartz, gallium arsenide (GaAs), aluminum nitride (AlN), and the like. In some embodiments, substrate 610 may comprise a silicon wafer with CMOS drivers.

Microsemiconductor device 620 can emit light of different colors (eg, red, green, blue, etc.). For example, as shown in FIG. 6, a first set of microsemiconductor devices 620a may emit a first color of light (also referred to as a "first plurality of microsemiconductor devices"). A second set of microsemiconductor devices 620b may emit a second color of light (also referred to as a "second plurality of microsemiconductor devices"). A third set of microsemiconductor devices 620c may emit a third color of light (also referred to as a "third plurality of microsemiconductor devices"). In some embodiments, the first color, second color, and third color may be red, green, and blue, respectively.

One or more of the microsemiconductor devices 620 can include photoconversion devices as described herein. For example, the first plurality of microsemiconductor devices can include a first QD having a first emission wavelength (QDs capable of converting light incident on the QDs into red light). The second plurality of microsemiconductor devices can include a second QD having a second emission wavelength (QDs capable of converting light incident on the QDs to green light). A third plurality of microsemiconductor devices can include a third QD having a third emission wavelength (QDs capable of converting light incident on the QDs into blue light). The first QDs, second QDs, and/or third QDs may be arranged in one or more nanoporous structures as described herein. In some embodiments, the third plurality of microsemiconductor devices does not include QDs.

Microsemiconductor device 620a, microsemiconductor device 620b, and microsemiconductor device 620c may form a pixel. Accordingly, the microsemiconductor device 620 corresponds to multiple pixels. Each of the pixels includes a microsemiconductor device 620a emitting light of a first color, a microsemiconductor device 620b emitting light of a second color, and a microsemiconductor device 620c emitting light of a third color. can be done. As an example, microsemiconductor device 620a may include light emitting device 570a and nanoporous structure 563a as described in connection with FIGS. 5B-5E. Microsemiconductor device 620b may include light emitting device 570b and nanoporous structure 563b as described in connection with FIGS. 5B-5E. Microsemiconductor device 620c may include light emitting device 570c and nanoporous structure 563c as described in connection with FIGS. 5B-5E.

FIG. 7 shows a schematic diagram illustrating an example display device 700 according to some embodiments of the present disclosure. The display device 700 may be a mobile phone, laptop, desktop, tablet computing device, wearable computing device (e.g., watch, eyeglasses, head-mounted display, virtual reality headset, activity tracker, clothing, etc.), television, etc. , can be incorporated into any suitable computing device. Display device 700 can include one or more light conversion devices as described herein. The display device can be of any suitable size.

As shown, display device 700 can include substrate 710 . Substrate 710 may include any suitable component for supporting microsemiconductor devices and/or any other suitable component of display device 700 . In one implementation, substrate 710 may comprise driver circuitry (eg, one or more CMOS drivers, TFTs, etc.). In another implementation, the second substrate does not include driver circuitry. Substrate 710 can include a plurality of conductive lines (eg, rows and/or columns of conductive lines) for connecting one or more of the microsemiconductor devices provided on substrate 710 .

Display device 700 can include a microsemiconductor device 720 formed on substrate 710 . Microsemiconductor device 720 may include microsemiconductor device 620 as described in connection with FIG. 6 above. For example, microsemiconductor device 620 may be transferred from substrate 610 to substrate 710 to form display device 700 . Transferring the microsemiconductor device includes picking up the microsemiconductor device and the first substrate (e.g., using an array of electrostatic transfer heads; using a laser beam to transfer a plurality of microsemiconductor devices; separating (such as by illuminating the device). A microsemiconductor device may then be formed on the substrate 710 . As described above, the microsemiconductor device 620 can form pixels of red microsemiconductor devices, green microsemiconductor devices, and blue microsemiconductor devices on a first substrate. A pixel may correspond to a pixel of display device 700 . Therefore, microsemiconductor device 620 does not need to be diced or sorted to be transferred onto substrate 710 . In some embodiments, the microsemiconductor device and driver circuitry may be transferred from substrate 610 to substrate 710 together. In some embodiments, mass transfer of microsemiconductor devices may be performed repeatedly to form display device 700 . For example, multiple sets of microsemiconductor devices 620 may be formed on multiple substrates 610 as described above, and then placed on the display substrate of the display in parallel, in series, or in any other suitable manner. may be transported by

Although the semiconductor devices 620 are arranged in a particular manner in FIGS. 6 and 7, this is for illustration only. Semiconductor devices 620 may be arranged in any suitable manner to form pixels of a display device. For example, two semiconductor devices 620b may be positioned between semiconductor device 620a and semiconductor device 620c in some embodiments. As another example, semiconductor devices located in different rows of semiconductor devices 620 (e.g., semiconductor device 620a in the first row and semiconductor devices 620b and 620c in the second row of semiconductor devices 620) may be used in the red, green, and blue pixels can be formed.

Referring to FIG. 8, exemplary structures and processes for manufacturing light conversion devices according to some embodiments of the present disclosure are shown. As shown, a solid material 820 may be provided on growth template 810 (eg, on surface 811 of growth template 810). Examples of solid state materials can include semiconductor materials (Si, GaN, AlN, InGaN, AlGaN, etc.), glasses, plastics, metals, polymers, and the like. In some embodiments, solid material 820 can include GaN. In some embodiments, solid material 820 is composed of a suitable semiconductor material, such as one or more layers of undoped semiconductor material, or one or more layers of semiconductor doped with certain impurities. One or more epitaxial layers may be included. For example, solid material 820 may include one or more layers of undoped GaN. As another example, solid material 820 may comprise GaN or any other suitable material doped with impurities of a particular conductivity type, such as a layer of n-doped GaN. As a more specific example, solid material 820 comprises a first undoped GaN layer, one or more n-doped GaN layers overlying the first undoped GaN layer, and a second undoped GaN layer. may contain.

Growth template 810 can include any suitable material for forming solid material 820 . For example, solid material 820 may include GaN. Growth template 810 includes sapphire, silicon carbide (SiC), silicon (Si), quartz, gallium arsenide (GaAs), aluminum nitride (AlN), and/or any other suitable material for growing GaN. be able to.

In some embodiments, growth template 810 may include one or more electronically conductive materials (also referred to as “conductive materials”). For example, growth template 810 can include one or more semiconductor materials such as silicon, SiC, AlN, and the like. As another example, the semiconductor material may include metal.

Solid material 820 can be treated to form a nanoporous structure using one or more electrochemical (EC) etching processes. For example, solid material 820 can be etched to form a nanoporous structure comprising a nanoporous material (eg, porous structure 120 as described above). QDs can then be placed within the nanoporous structure. During the EC etching process, the conductive growth template 810 can also be etched. This can affect the formation of nanoporous structures. A protective layer 830 may be formed on one or more portions of the growth template 810 to prevent the growth template 810 from being etched during the EC etching process. The protective layer 830 can prevent the etchant from contacting the growth template during the etching process. As an example, as shown in FIG. 8, semiconductor device 800 may include protective layer 830 covering surfaces 813 , 815 and/or 817 of growth template 810 . Surfaces 813 and 811 may represent opposing sides of growth template 810 . Surfaces 815 and 817 may correspond to faces of growth template 810 . In one implementation, protective layer 830 covers one or more portions of solid material 820, as shown in FIG. In another implementation, protective layer 830 does not cover solid material 820 .

Forming a protective layer 830 over the growth template 810 can prevent the etchant from contacting the growth template and/or prevent the growth template 810 from being etched during the etching process. , adhesives, waxes, and the like.

In some embodiments, protective layer 830 may be removed after completing the EC etching process. For example, the protective layer can be removed using chemical methods (eg, by cleaning semiconductor device 800 in acetone or any other suitable chemical). As another example, the protective layer may be removed by heating protective layer 820 and/or semiconductor device 800 .

Referring to FIG. 9, an exemplary process for forming porous structures according to some embodiments of the present disclosure is shown. As shown, semiconductor device 800 may be exposed to electrolyte 905 (eg, oxalic acid, KOH, HCL, etc.). Electrode 910 may be immersed in the electrolyte. Semiconductor device 800 and electrode 910 may be connected to first and second terminals, respectively, of power supply 920 to form a circuit. A power source can energize the circuit to electrochemically etch the solid material 820 to form a porous structure as described in connection with FIGS. 1A-1D. For example, pores may be electrochemically etched into one or more portions of solid material 820 (eg, an n-type doped GaN layer). Each of the pores can have a nanoscale size (eg, sizes on the order of 1 nm to 1000 nm or larger). A mask (not shown) may be formed on one or more portions of the solid material 820 prior to the etching process to form the pores. A mask may include one or more materials that are not electrically conductive. Thus, portions of solid material 820 covered by the mask are not etched during the etching process, while portions of solid material 820 not covered by the mask may be etched during the etching process. The dimensions and/or pattern of the mask can be adjusted to facilitate formation of pores in desired locations and/or of appropriate dimensions. Specific porosity and/or other properties of the nanoporous structure are achieved by controlling the voltage and/or current supplied by the power supply and/or by controlling the doping concentration of the n-doped GaN. be able to. During the EC etching process, the protective layer 830 can protect the growth template 810 from contact with the electrolyte, thus preventing the growth template 810 from being etched.

Referring to FIG. 10, an example process 1000 is provided for forming porous structures according to some embodiments of the present disclosure.

At block 1010, a semiconductor device including solid material formed on a growth template may be provided. A growth template may comprise one or more conductive materials such as silicon, metals, and the like. In some embodiments, providing a semiconductor device comprises a layer of semiconductor material, such as a given layer of semiconductor material, a layer of semiconductor material having a specific conductivity type impurity (e.g., an n-doped layer of semiconductor material). or growing more layers. Semiconductor materials may include, for example, III-V materials. As an example, one or more undoped GaN layers may be grown on the growth template. As another example, one or more n-doped GaN layers may be grown on the growth template. In some embodiments, providing a solid material on the growth template comprises growing an undoped GaN layer on the growth template and growing one or more n-doped GaN layers on the undoped GaN layer. and the step of In some embodiments, the growth template does not contain a foreign substrate.

At block 1020, a protective layer may be formed over the growth template. The protective layer can protect the growth template from etching in EC processes. In some embodiments, forming a protective layer includes depositing on one or more surfaces of the growth template a suitable material capable of protecting the growth template from etching in EC processes. can be done. Examples of materials can include epoxies and the like.

At 1030, a porous structure can be formed within the semiconductor device. The porous structure may comprise a nanoporous material (eg, a nanoporous structure as described above in connection with FIGS. 1A-1C). To form porous structures in semiconductor devices, semiconductor devices and/or solid materials may be processed using an EC etching process, in some embodiments. For example, a semiconductor device including a growth template and solid material may be exposed to the electrolyte and processed as described in connection with FIG. 9 above. Processing the semiconductor device using an EC etching process removes one or more portions of solid material (e.g., one or more layers of n-doped GaN or any other suitable material). A plurality of pores can be formed in the Each of the pores may be of nanoscale size (eg, sizes on the order of 1 nm to 1000 nm or larger). After forming a protective layer for the growth template, the solid material may be treated and/or a nanoporous structure may be formed.

At block 1040, the protective layer may be removed from the semiconductor device. For example, the protective layer epoxy can be removed by washing the semiconductor device in acetone. The protective layer may be removed after processing of the semiconductor device and/or formation of the porous structure.

Referring to FIG. 11, an example method 1100 is provided for forming a light conversion device according to some embodiments of the present disclosure. The light conversion device may be and/or include the light conversion device 130 and/or 150 as described in connection with FIGS. 1A-1D.

At block 1110, a porous structure can be provided that includes one or more nanoporous materials. One or more nanoporous materials can include a matrix structure and a plurality of pores. Each of the pores can have a nanoscale size.

In some embodiments, providing the porous structure can include manufacturing the porous structure. For example, one or more operations such as those described above in connection with FIGS. 1A-1B may be performed. In some embodiments, fabricating the porous structure includes forming one or more nanoporous materials using solid materials such as semiconductor materials, glasses, plastics, metals, polymers, etc. can contain. For example, a solid material may be etched to form nanoscale sized pores in the solid material.

At block 1120, a plurality of quantum dots can be arranged in the porous structure. Quantum dots can have different emission wavelengths and can convert light incident on the quantum dots into light of mixed color emission. For example, quantum dots can convert light of a first color into light of a second color and light of a third color. As another example, quantum dots can convert light of a first color to light of a fourth color. In some embodiments, the second color, third color, and fourth color can include green, red, and blue, respectively. In some embodiments, incident light can include violet light. Quantum dots can be placed within the porous structure using photolithographic methods, inkjet printing methods, and the like.

In some embodiments, disposing the quantum dots within the porous structure comprises first arranging the plurality of quantum dots. The first plurality of quantum dots may have a first emission wavelength and can convert incident light of a first color to light of a second color. The second color of light can have a wavelength corresponding to the first emission wavelength.

Disposing the quantum dots within the porous structure disposes a second plurality of quantum dots within a second portion of the porous structure (e.g., a second plurality of pores of the nanoporous material). Further steps can be included. A second plurality of quantum dots may have a second emission wavelength and can convert incident light into light of a third color. The third color of light can have a wavelength corresponding to the second emission wavelength.

In some embodiments, the step of disposing the quantum dots within the porous structure comprises forming a third quantum dot within a third portion of the porous structure (e.g., a third plurality of pores within the nanoporous material). can further include arranging the plurality of quantum dots of the . A third plurality of quantum dots may have a third emission wavelength and can convert incident light into light of a fourth color. The fourth color light can have a wavelength corresponding to the third emission wavelength.

At block 1130, protective structures may be formed. A protective structure can cover a plurality of quantum dots arranged in the nanoporous structure. In some embodiments, the quantum dots are configured to convert light having a first emission wavelength into light having a second emission wavelength and light having a third emission wavelength. The protective structure may be and/or include the protective structure 155 of FIG. 1D.

In some embodiments, forming a protective structure may include forming one or more layers of materials that can protect the QDs from oxidation, moisture, and/or other environmental factors. For example, forming a protective structure may include forming a first protective layer overlying the surface of the quantum dots disposed within the porous structure at block 1131 . A first protective layer can comprise a first material such as PDMS, PMMA, epoxy, or the like. In some embodiments, forming a first protective layer may include coating the QDs within the nanoporous material with the first material.

Coating the QDs may comprise spin-coating the nanoporous structure. The first material may be a liquid capable of flowing through the nanoporous structure and/or the nanoporous material and capable of covering the surface of the QDs disposed within the nanoporous structure; and/ or may include this.

Forming a protective structure may include forming a second protective layer over the first protective layer at block 1133 . The second protective layer may comprise a second material such as _SiO2 , SiN, _{Al2O3 ,} and the like. The second material may be different than the first material in some embodiments. Forming the second protective layer may include depositing _a layer of a second material (eg, a _SiO2 film, a SiN film, an _Al2O3 film, etc.) over the first protective layer.

Referring to FIG. 12, an example method 1200 is provided for forming a light emitting device according to some embodiments of the present disclosure. The light emitting device may be and/or include a semiconductor device such as described in connection with FIGS. 3A-3E.

At block 1210, a light emitting structure may be provided. The light emitting structure can include one or more epitaxial layers of III-V materials and/or any other suitable material. As an example, a light emitting structure can include a first semiconductor layer comprising an n-doped GaN layer, a second semiconductor layer comprising an active layer, a third semiconductor layer comprising a p-doped GaN layer, and so on. In some embodiments, forming a light emitting structure includes forming a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, etc. on a growth template (e.g., a sapphire substrate, a GaN substrate, etc.). can include steps. The light emitting structure may be and/or include light emitting structure 310 of FIG.

In some embodiments, the light emitting structure may be formed on the drive circuit. A drive circuit may include one or more electrical circuits (eg, an array of electrical circuits) that may be individually controllable. In some embodiments, the drive circuitry may include one or more complementary metal oxide semiconductor (CMOS) drivers.

At block 1220, a light conversion device may be formed. A light conversion device can include a plurality of quantum dots disposed within a porous structure comprising one or more nanoporous materials (e.g., the quantum dots described in connection with FIGS. 1A-2B above). photoconverting device). In some embodiments, a light conversion device may be formed on the first semiconductor layer. For example, the growth template may be removed from the light emitting structure (eg, using laser liftoff or any other suitable technique) to expose the first semiconductor layer. The light conversion device then forms (e.g., one or more porous structures comprising the nanoporous material ("nanoporous structure") and disposes the QDs within the nanoporous structure(s). ) can be formed on the first semiconductor layer. As an example, forming the nanoporous structure may include etching one or more portions of the first semiconductor layer. As another example, forming a nanoporous structure may include manufacturing a solid material into a nanoporous material (eg, semiconductor material, glass, plastic, metal, polymer, etc.). As noted above, the nanoporous structure(s) may or may not be in direct contact with the first semiconductor layer.

In some embodiments, a light conversion device may be formed on the growth template and/or the light emitting structure. For example, one or more epitaxial layers of GaN may be grown on the growth template. A nanoporous structure can then be formed by etching the epitaxial layer of GaN. As another example, forming a nanoporous structure may include manufacturing a solid material into a nanoporous material (eg, semiconductor material, glass, plastic, metal, polymer, etc.). The nanoporous structure may or may not be in direct contact with the growth template.

At block 1230, a first ohmic contact (eg, n-pad) and a second ohmic contact (eg, p-pad) may be formed on the light emitting structure. In one implementation, the first ohmic contact and the second ohmic contact may be deposited on the same side of the light emitting structure. In such implementations, the light conversion device and the first ohmic contact may be deposited on opposite sides of the light emitting structure. In another implementation, the first ohmic contact and the second ohmic contact may be deposited on opposing sides of the light emitting structure. In such implementations, the first ohmic contact and the light conversion device may be deposited on the same side of the light emitting structure.

Referring to FIG. 13, an example method 1300 is provided for manufacturing a semiconductor device including multiple light emitting devices according to some embodiments of the present disclosure.

At block 1310, a light conversion device may be provided. A light conversion device can include one or more porous structures with embedded quantum dots. The light conversion devices may include light conversion devices 130 and/or 150 as described above in connection with FIGS. 1C-1D. In some embodiments, the first portion of the light conversion device is embedded with first quantum dots capable of converting light passing through the first nanoporous structure into light of a first color. A first nanoporous structure can be included. A second portion of the light conversion device comprises a second nanoporous structure embedded with second quantum dots capable of converting light passing through the second nanoporous structure into light of a second color. can include Part 3 of the light conversion device can include a third nanoporous structure. In one implementation, the third nanoporous structure does not include quantum dots. In another implementation, the third nanoporous structure comprises quantum dots capable of converting light passing through the third nanoporous structure into light of a third color. In some embodiments, the first color, second color, and third color may be red, green, and blue, respectively.

In some embodiments, providing a light conversion device can include performing one or more of the operations set forth in blocks 1311-1319.

At block 1311, a porous structure with a plurality of pores may be provided. Each of the pores can have a nanoscale size. The porous structure may be and/or include, for example, porous structure 120 as described in connection with FIG. 1B. In some embodiments, providing the porous structure can include manufacturing the porous structure using a solid material such as described with respect to block 1110 of FIG.

At block 1313, a plurality of nanoporous structures may be formed. Each nanoporous structure can correspond to a portion of a light conversion device. For example, a nanoporous structure may be formed by forming one or more trenches or any other suitable structure that can divide the porous structure into multiple portions. Two adjacent nanoporous structures may be separated by one of the trenches. A trench may be formed, for example, by etching a porous structure. The location and/or dimensions of the trench can correspond to the location and/or dimensions of the light emitting device attached to the light conversion device.

At block 1315, one or more structures may be formed to block optical crosstalk across the nanoporous structure. For example, one or more sidewalls of the trench may be coated with a metallic material. Metal materials can include, for example, aluminum, nickel, and/or any other suitable metal. Metallic materials can be coated using electron beam lithographic techniques or any other suitable technique.

At block 1317, quantum dots may be placed on one or more of the nanoporous structures. For example, a first quantum dot and a second quantum dot can be disposed in a first nanoporous structure and a second nanoporous structure, respectively. Quantum dots can be placed using photolithographic methods, inkjet printing methods, and the like.

At block 1319, protective structures may be formed over one or more of the quantum dots. The protective structure may be and/or include the protective structure 155 of FIG. 1D. In some embodiments, protective structures may be formed by performing one or more of the operations described in connection with block 1130 of FIG. 11 above.

At block 1320, a lighting structure comprising one or more lighting devices may be provided. In some embodiments, the light emitting structure can include multiple light emitting devices (eg, first light emitting device, second light emitting device, third light emitting device, etc.) capable of generating light. Each of the light emitting devices can include a first ohmic contact and a second ohmic contact. One or more of the light emitting devices may be and/or include light emitting diodes in some embodiments. In some embodiments, one or more of the light emitting devices may include flip-chip LEDs as described herein.

A light-emitting device within the light-emitting structure may correspond to a non-porous structure within the light-converting device. For example, a first light emitting device, a second light emitting device, and a third light emitting device correspond to the first nanoporous structure, the second nanoporous structure, and the third nanoporous structure, respectively. obtain. Light generated by the first light-emitting device can pass through the first nanoporous structure and is light of a first color due to the first quantum dots disposed within the first nanoporous structure. can be converted to Light generated by the second light-emitting device can pass through the second nanoporous structure and is light of a second color due to the second quantum dots disposed within the second nanoporous structure. can be converted to Light generated by the third light emitting device can pass through the third nanoporous structure. In some embodiments, the third nanoporous structure does not contain quantum dots.

At block 1330, the light emitting structure may be attached to the light conversion device. Attaching the light emitting device to the light converting device may include mounting the light emitting structure to a substrate of the light emitting structure. The light emitting device may be attached to the light conversion device using one or more flip chip assembly techniques.

Referring to FIG. 14, an example method 1400 is provided for manufacturing a display device according to some embodiments of the present disclosure.

At block 1410, a plurality of microsemiconductor devices may be provided on a first substrate. For example, semiconductor device 620 of FIG. 6 may be provided on substrate 610 of FIG. In some embodiments, the first substrate may be and/or include a growth substrate for growing GaN and/or any other material of the light emitting structure. For example, the first substrate may include sapphire, SiC, Si, quartz, GaAs, aluminum nitride (AlN), GaN, and the like. In some embodiments, the first substrate may include a silicon wafer with CMOS drivers.

Multiple microsemiconductor devices can emit light of different colors (eg, red, green, blue, etc.). For example, a first plurality of microsemiconductor devices can emit a first color of light (eg, microsemiconductor device 620a of FIG. 6). A second plurality of microsemiconductor devices can emit a second color of light (eg, microsemiconductor devices 620b of FIG. 6). A third plurality of microsemiconductor devices can emit a third color of light (eg, microsemiconductor device 620c of FIG. 6). In some embodiments, the first color, second color, and third color may be red, green, and blue, respectively.

One or more of the microsemiconductor devices can include photoconversion devices as described herein. For example, the first plurality of microsemiconductor devices can include a first QD having a first emission wavelength (QDs capable of converting incident light to red light). The second plurality of microsemiconductor devices can include a second QD having a second emission wavelength (QDs capable of converting incident light to green light). A third plurality of microsemiconductor devices can include a third QD having a third emission wavelength (QDs capable of converting incident light to blue light). The first QDs, second QDs, and/or third QDs may be arranged in one or more nanoporous structures as described herein. In some embodiments, the third plurality of microsemiconductor devices does not include QDs.

In some embodiments, the microsemiconductor device may be provided on drive circuitry. For example, a microsemiconductor device may be implemented in a drive circuit. In some embodiments, the microsemiconductor device may be mounted to drive circuitry through a metal bonding process (eg, indium metal bonding). In some embodiments, a wafer with microsemiconductor devices may be mounted on a wafer with drive circuits (eg, a Si CMOS driver wafer) to provide microsemiconductor devices on the drive circuits.

At block 1420, a plurality of microsemiconductor devices may be transferred from the first substrate to the second substrate. In some embodiments, the second substrate may be part of the display module of the display. In one implementation, the second substrate may comprise driver circuitry (eg, one or more CMOS drivers, TFTs, etc.). In another implementation, the second substrate does not include driver circuitry. The second substrate may comprise a plurality of conductive lines (eg, rows and/or columns of conductive lines). As an example, the second substrate may be and/or include substrate 710 of FIG.

In some embodiments, transferring micro semiconductor devices from the first substrate to the second substrate includes selectively transferring a plurality of micro semiconductor devices from the first substrate to the second substrate. It's okay. For example, one or more of the microsemiconductor devices can be tested and/or selected before being transferred to a second substrate. The inspection and/or selection can be based on specifications defining one or more characteristics of one or more microsemiconductor devices to be transferred to the second substrate. Examples of characteristics may include a predetermined emission wavelength of the microsemiconductor devices, a predetermined output current of the microsemiconductor devices, a predetermined percentage of the microsemiconductor devices meeting specifications, and the like.

Transferring the microsemiconductor device includes separating the microsemiconductor device and the first substrate at block 1421 (eg, using an array of electrostatic transfer heads to pick up the microsemiconductor device, using a laser beam to (such as by irradiating the microsemiconductor device). A microsemiconductor device may then be mounted on a second substrate at block 1423 .

Process 1400 may be performed iteratively to manufacture a display. For example, microsemiconductor devices may be formed on a plurality of substrates 610 as described above, and then transferred in parallel, serially, or in any other suitable manner to the display substrate of the display. good.

For simplicity of explanation, the methods of the present disclosure are illustrated and described as a series of acts. However, operations in accordance with the present disclosure can be performed in various orders and/or concurrently, and with other operations not presented and described herein. Moreover, not all illustrated acts may be required to implement a methodology in accordance with the disclosed subject matter. Additionally, those skilled in the art will understand and appreciate that a methodology could alternatively be represented as a series of interrelated states via a state diagram or events. Additionally, it should be understood that the methods disclosed herein may be stored on articles of manufacture to facilitate transport and transfer of such methods to computing devices.

The following examples illustrate various implementations according to one or more aspects of the disclosure.

Example 1 is a porous structure formed on a light-emitting structure, the porous structure comprising one or more nanoporous materials, and a plurality of nanoporous materials disposed within the porous structure. A semiconductor device comprising a quantum dot, a first ohmic contact and a second ohmic contact.

Example 2 includes the semiconductor device of Example 1, wherein a second ohmic contact and porous structure are provided on opposite sides of the light emitting structure.

Example 3 includes the semiconductor device of Example 1, wherein the first ohmic contact and porous structure are formed on the same side of the light emitting structure.

Example 4 includes the semiconductor device of Example 1, wherein the first ohmic contact and porous structure are provided on opposite sides of the light emitting structure.

Example 5 includes the semiconductor device of Example 1, wherein the porous structure is not in direct contact with the light emitting structure.

Example 6 includes the semiconductor device of Example 5, wherein the semiconductor device further comprises _a support layer disposed between the light emitting structure and the porous structure, the support layer comprising _Al2O3 .

Example 7 includes the semiconductor device of Example 5, wherein the porous structure and the light emitting structure are separated by a space.

Example 8 includes the semiconductor device of Example 1, wherein the sidewalls of the semiconductor device are coated with a reflective material.

Example 9 is practiced wherein the plurality of quantum dots comprises one or more first quantum dots having a first emission wavelength and one or more second quantum dots having a second emission wavelength. The semiconductor device of Example 1 is included.

Example 10 includes the semiconductor device of Example 9, wherein the plurality of quantum dots further comprises one or more third quantum dots having a third emission wavelength.

Example 11 includes the semiconductor device of Example 1, wherein the one or more nanoporous materials comprise at least one of semiconductor material, glass, plastic, metal, or polymer.

Example 12 includes the semiconductor device of Example 1, wherein the light emitting structure comprises one or more epitaxial layers of GaN.

Example 13 is a method for manufacturing a semiconductor device, comprising forming on a light emitting structure a light conversion device for converting light generated by the light emitting structure into light of a plurality of colors, comprising: Forming the conversion device comprises forming a porous structure comprising one or more nanoporous materials on the light emitting structure, and disposing a plurality of quantum dots within the porous structure. and

Example 14 includes the method of Example 13, wherein the light emitting structure comprises a growth template and a semiconductor layer comprising an n-doped GaN layer.

Example 15 further includes removing the growth template of the light emitting structure to expose the semiconductor layer of the light emitting structure, wherein forming the porous structure on the light emitting structure etches at least a portion of the semiconductor layer. including the method of Example 14, comprising the steps.

Example 16 includes the method of Example 15, wherein forming the porous structure on the light emitting structure comprises forming a light conversion device on the semiconductor layer.

Example 17 includes the method of Example 14, further comprising forming a porous structure on the growth template.

Example 18 relates to the method wherein disposing a plurality of quantum dots within the porous structure includes one or more first quantum dots having a first emission wavelength and one or more quantum dots having a second emission wavelength. 14. Includes the method of example 13, including placing the second quantum dot.

Example 19 uses the method of Example 18, wherein disposing a plurality of quantum dots within the porous structure comprises disposing one or more third quantum dots having a third emission wavelength. include.

Example 20 includes the method of Example 13, wherein the plurality of quantum dots are disposed within the porous structure using at least one of photolithographic methods or inkjet printing methods.

Example 21 includes the method of Example 13, wherein the porous structure is not in direct contact with the light emitting structure.

Example 22 includes the method of Example 21, wherein the porous structure and the luminescent structure are separated by a space.

Example 23 includes the method of Example 13, further comprising coating sidewalls of the semiconductor device with a reflective material.

Example 24 is disposing a plurality of microsemiconductor devices on a first substrate, the plurality of microsemiconductor devices being a first plurality of microsemiconductor devices for emitting a first color of light. a second plurality of microsemiconductor devices for emitting light of a second color; and a third plurality of microsemiconductor devices for emitting light of a third color; and transferring the microsemiconductor device from the first substrate onto the second substrate.

Example 25 includes the method of example 24, wherein the first plurality of microsemiconductor devices comprises a first plurality of quantum dots disposed within the one or more first nanoporous structures.

Example 26 includes the method of Example 25, wherein the second plurality of microsemiconductor devices comprises a second plurality of quantum dots disposed within the one or more second nanoporous structures.

Example 27 includes the method of Example 26, wherein the third plurality of microsemiconductor devices comprises a third plurality of quantum dots disposed within the one or more third nanoporous structures.

Example 28 comprises a display substrate wherein the second substrate comprises a first pixel of a first plurality of micro semiconductor devices, a second pixel of a second plurality of micro semiconductor devices, and a third plurality of micro semiconductor devices. 25. Include the method of example 24, wherein the third pixel of the semiconductor device forms a pixel of the display.

Example 29 includes the method of Example 24, wherein the first color is red, the second color is green, and the third color is blue.

Example 30 includes the method of example 24, wherein forming a plurality of micro semiconductor devices on the first substrate comprises forming a plurality of micro semiconductor devices on a driver circuit.

Example 31 includes the method of example 30, wherein the driver circuit comprises a complementary metal oxide semiconductor (CMOS) driver.

Example 32 includes the method of Example 24, further comprising separating the plurality of microsemiconductor devices and the first substrate.

Example 33 includes the method of example 32, wherein separating the plurality of micro semiconductor devices comprises picking up the plurality of semiconductor devices using an array of electrostatic transfer heads.

Example 34 includes the method of example 32, wherein separating the plurality of microsemiconductor devices comprises illuminating the plurality of microsemiconductor devices using a laser beam.

Example 35 is a first plurality of microsemiconductor devices for emitting a first light of a first color, a second plurality of microsemiconductor devices for emitting a second light of a second color , and a third plurality of microsemiconductor devices for emitting a third light of a third color, wherein the first plurality of microsemiconductor devices comprises one or more first nanoporous a first plurality of quantum dots disposed within the porous structure, the second plurality of microsemiconductor devices comprising a second plurality of quantum dots disposed within the one or more second nanoporous structures; A display comprising:

Example 36 includes the display of Example 35, wherein the third plurality of microsemiconductor devices comprises a third plurality of quantum dots disposed within one or more third nanoporous structures.

Example 37 is a porous structure formed on a light-emitting structure, the porous structure comprising one or more nanoporous materials, and a plurality of nanoporous materials disposed within the porous structure. A semiconductor device comprising quantum dots and a scattering medium disposed between a porous structure and an emissive structure.

Example 38 includes the semiconductor device of Example 37, wherein the scattering medium comprises at least one of _SiO2 , SiN, polymer, or xerogel.

Example 39 includes the semiconductor device of Example 37, wherein the scattering medium is configured to cause scattering of at least some of the light generated by the light emitting structure.

Example 40 has a scattering medium formed on a first surface of the light emitting structure, a porous structure formed on a second surface of the scattering medium, and a second surface of the scattering medium forming the first surface of the light emitting structure. Includes the semiconductor device of Example 38, which is larger than the surface.

Example 41 provides a light conversion device comprising a plurality of quantum dots disposed within a nanoporous structure comprising one or more nanoporous materials; A method comprising providing a structure and attaching a light conversion device to the light emitting structure.

Example 42 includes the method of example 41, wherein attaching the light converting device to the light emitting structure comprises bonding the substrate of the nanoporous structure and the light emitting structure.

Example 43 is the method of Example 41, wherein providing a light conversion device comprises forming a nanoporous structure using a solid material and disposing quantum dots within the nanoporous structure. including methods.

Example 44 includes the method of example 43, wherein the solid material comprises at least one of a semiconductor material, glass, plastic, metal, or polymer.

The terms “approximately,” “about,” and “practically” are used in some embodiments within ±20% of a target dimension, in some embodiments within ±10% of a target dimension, in some implementations Form can be used to mean within ±5% of the target dimension, and in some embodiments even within ±2%. The terms "approximately" and "about" can include target dimensions.

The foregoing description reveals many details. It may be evident, however, that the present disclosure may be practiced without these specific details. In some instances, well-known structures and devices are shown in block diagram form, rather than in detail, in order to avoid obscuring the present disclosure.

As used herein, the terms "first", "second", "third", "fourth", etc. refer to labels for distinguishing between different elements, and must be the numerical values of the children. No order is implied by the designation.

The word "example" or "exemplary" is used herein to mean serving as an example, instance, or illustration. Any aspect or design described as "example" or "exemplary" herein is not to be construed as preferred or advantageous over other aspects or designs. Rather, use of the word "example" or "exemplary" is intended to present concepts in a concrete fashion. As used in this application, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or." That is, unless specified otherwise or clear from context, "X includes A or B" is intended to mean any of the natural inclusive permutations. That is, if X contains A, or X contains B, or X contains both A and B, then "X contains A or B" is satisfied under any of the preceding cases. be Additionally, as used in this application and the appended claims, the articles "a" and "an" generally refer to "one" unless specified otherwise or clear from the context to direct the singular. shall be construed to mean "greater than or equal to". References to "an implementation" or "one implementation" throughout this specification may indicate that a particular feature, structure, or characteristic described in connection with that implementation has at least one It is meant to be included in the implementation. Thus, the appearances of the phrases "implementation" or "one implementation" in various places throughout this specification are not necessarily all referring to the same implementation.

As used herein, when an element or layer is referred to as being “on” another element or layer, that element or layer may be directly on the other element or layer; or there may be intervening elements or layers. In contrast, when an element or layer is referred to as being "directly on" another element or layer, there are no intervening elements or layers present.

While certainly many variations and modifications of this disclosure will become apparent to those skilled in the art after reading the foregoing description, any specific embodiments shown and described by way of illustration are in no way limiting. It should be understood that it is not intended to be construed. Therefore, reference to details of various embodiments is not intended to limit the scope of the claims, which themselves recite only those features relevant to the present disclosure.

Claims (20)

a first light emitting device, a second light emitting device and a third light emitting device, each of the first light emitting device, the second light emitting device and the third light emitting device having a first ohmic contact and a third light emitting device; a light emitting structure comprising two ohmic contacts;
A light conversion device comprising one or more porous structures with embedded quantum dots, wherein a first portion of the light conversion device converts light generated by the first light emitting device into a first color. a first plurality of quantum dots for converting to light, a second portion of said light converting device for converting light generated by said second light emitting device to light of a second color. a light conversion device comprising a second plurality of quantum dots, wherein the third light emitting device emits light of a third color;
A semiconductor device comprising: The first plurality of quantum dots are disposed in the first plurality of pores of the first portion of the light conversion device, and the second plurality of quantum dots are disposed in the second plurality of the light conversion device. 2. The semiconductor device of claim 1, disposed in a portion of 3. The semiconductor of claim 2, wherein at least one of said first plurality of pores has a diameter of 500 nm or less and at least one of said first plurality of pores has a depth of 1 μm or greater. device. 4. The semiconductor device of claim 3, wherein at least one of said first plurality of pores has a diameter greater than or equal to 1 nm. 2. The semiconductor device of Claim 1, further comprising a protective structure covering a surface of one or more of said quantum dots embedded in said one or more porous structures. 6. The semiconductor device of Claim 5, wherein said protective structure is disposed between said light emitting structure and said one or more porous structures. 2. The semiconductor of claim 1, wherein said first portion of said light conversion device and said second portion of said light conversion device are separated by a trench, and wherein at least one sidewall of said trench is coated with a metallic material. device. 2. The semiconductor device of Claim 1, further comprising a scattering medium configured to cause scattering of at least a portion of light generated by said light emitting structure. 2. The semiconductor device of claim 1, wherein sidewalls of said semiconductor device are coated with a reflective material. 2. The semiconductor device of claim 1, wherein said one or more porous structures are not in direct contact with said light emitting structure. 2. The semiconductor device of claim 1, wherein said first color is red, said second color is green, and said third color is blue. 2. The semiconductor device of claim 1, wherein the dimension of said first portion of said light conversion device is 100 [mu]m or less. 2. The semiconductor device of claim 1, wherein the dimension of said first portion of said photoconversion device is 50 [mu]m or less. a first light emitting device, a second light emitting device and a third light emitting device, each of the first light emitting device, the second light emitting device and the third light emitting device having a first ohmic contact and a third light emitting device; providing a light emitting structure comprising two ohmic contacts;
A light conversion device comprising one or more porous structures with embedded quantum dots, wherein a first portion of the light conversion device converts light generated by the first light emitting device into a first color. a first plurality of quantum dots for converting to light, a second portion of said light converting device for converting light generated by said second light emitting device to light of a second color. providing a light conversion device comprising a second plurality of quantum dots, wherein said third light emitting device emits light of a third color;
A method comprising: Providing the light conversion device comprises:
disposing the first plurality of quantum dots in the first portion of the photoconversion device;
disposing the second plurality of quantum dots in the second portion of the photoconverting device;
15. The method of claim 14, comprising: 16. The method of Claim 15, wherein disposing the first plurality of quantum dots on the first portion of the light converting device uses at least one of photolithography or inkjet printing. 15. The method of claim 14, further comprising forming a protective structure overlying the surface of one or more of the quantum dots embedded in the one or more porous structures. providing the light conversion device comprising the one or more porous structures comprising the embedded quantum dots,
forming a plurality of nanoporous structures separated by a plurality of trenches;
coating at least one sidewall of at least one trench of the plurality of trenches with a metallic material;
15. The method of claim 14, comprising: 15. The method of Claim 14, further comprising attaching the light emitting structure to the light conversion device. 15. The method of claim 14, wherein said first color is red, said second color is green and said third color is blue.

Images