JP2023507106A - multi-zone electrostatic chuck - Google Patents

Abstract

An exemplary semiconductor processing chamber may include a pedestal that includes a platen configured to support a semiconductor substrate over a surface of the platen. The chamber may include a first conductive mesh incorporated within the platen and configured to act as a first chucking mesh. A first conductive mesh may extend radially across the platen. The chamber may include a second conductive mesh incorporated within the platen and configured to act as a second chucking mesh. The second conductive mesh can be characterized by an annular shape. A second conductive mesh may be disposed between the first conductive mesh and the surface of the platen. [Selection drawing] Fig. 2

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application claims the benefit of priority to U.S. Patent Application Serial No. 16/717,245, filed December 17, 2019, which for all purposes is incorporated herein by reference in its entirety.

TECHNICAL FIELD [0002] The present technology relates to semiconductor processing and chamber components. More particularly, the technology relates to chamber components and processing methods.

BACKGROUND [0003] Integrated circuits are enabled by processes that produce intricately patterned layers of materials on substrate surfaces. A controlled method of forming and removing exposed material is required to produce patterned material on a substrate. As device sizes continue to shrink, the deposited material can stress the substrate, resulting in substrate bowing. During subsequent deposition operations, wafer bow can affect contact across the substrate support, which can affect heating. A non-uniform heating profile across the substrate can affect subsequent deposition operations and cause non-uniform deposition across the surface of the substrate.

[0004] Therefore, there is a need for improved systems and methods that can be used to manufacture high quality devices and structures. These and other needs are addressed by the present technology.

[0005] An exemplary semiconductor processing chamber may include a pedestal that includes a platen configured to support a semiconductor substrate over a surface of the platen. The chamber may include a first conductive mesh incorporated within the platen and configured to act as a first chucking mesh. A first conductive mesh may extend radially across the platen. The chamber may include a second conductive mesh incorporated within the platen and configured to act as a second chucking mesh. The second conductive mesh can be characterized by an annular shape. A second conductive mesh may be disposed between the first conductive mesh and the surface of the platen.

In some embodiments, the chamber may include a third conductive mesh incorporated within the platen and configured to act as a third chucking mesh. A third conductive mesh can be included within the inner annular radius of the second conductive mesh. A third conductive mesh may be disposed between the first conductive mesh and the surface of the platen. The second conductive mesh and the third conductive mesh may be coplanar within the platen. The second conductive mesh and the third conductive mesh can be separated by an annular gap. The chamber may include a first thermocouple associated with the second conductive mesh and a second thermocouple associated with the third conductive mesh. The first conductive mesh and the second conductive mesh may be independently operable from a power source. The chamber may include a sheet of mica disposed between the first and second conductive meshes. The sheet of mica can extend into the apertures formed in the first conductive mesh, and the electrode connectors extend through the apertures and the sheet of mica to provide the second conductive mesh. can be electrically coupled to the elastic mesh. The chamber can include at least two additional conductive meshes axially aligned with the first conductive mesh and the second conductive mesh.

[0007] Some embodiments of the technology may include a substrate support pedestal. The pedestal may include a platen configured to support the semiconductor substrate across the surface of the platen. The pedestal may include a first conductive mesh incorporated within the platen and configured to operate as a first chucking mesh. A first conductive mesh may extend radially across the platen. The pedestal may include a second conductive mesh incorporated within the platen and configured to operate as a second chucking mesh. The second conductive mesh can be characterized by an annular shape, and the second conductive mesh can be disposed between the first conductive mesh and the surface of the platen. The chamber may include a third conductive mesh incorporated within the platen and configured to act as a third chucking mesh. A third conductive mesh can be included within the inner annular radius of the second conductive mesh. A third conductive mesh may be disposed between the first conductive mesh and the surface of the platen.

[0008] In some embodiments, the pedestal may include a first thermocouple associated with the second conductive mesh and a second thermocouple associated with the third conductive mesh. The second conductive mesh and the third conductive mesh may be coplanar within the platen. The second conductive mesh and the third conductive mesh can be separated by an annular gap. The first conductive mesh and the second conductive mesh may be independently operable within the substrate support from a power source. The pedestal may include a sheet of mica disposed between the first conductive mesh and the second conductive mesh. The sheet of mica can extend to the apertures formed in the first conductive mesh. Electrode connectors can extend through the apertures and the sheet of mica to electrically couple with the second conductive mesh. The pedestal may include at least two additional conductive meshes coaxially aligned with the first conductive mesh and the second conductive mesh.

[0009] Some embodiments of the technology may include semiconductor processing methods. The method can include clamping the substrate onto the substrate support by engaging a first conductive mesh of the substrate support. A first conductive mesh may extend across the substrate support. The method can include engaging a second conductive mesh of the substrate support. The second conductive mesh may comprise an annular mesh overlying the first conductive mesh. A first conductive mesh can be engaged with the substrate at a first clamping voltage. A second conductive mesh can be engaged with the substrate at a second clamping voltage that is higher than the first clamping voltage. The method may include performing semiconductor processing operations on the substrate. In some embodiments, the second conductive mesh can be characterized by an annular shape. The substrate support can include a third conductive mesh, and the second conductive mesh and the third conductive mesh can be coplanar.

[0010] Such techniques may offer many advantages over conventional systems and techniques. For example, the system can improve deposition profiles to improve uniformity across the substrate. In addition, the technique may allow in situ adjustment of the chucking voltage, which may allow adjustments to affect in-process deposition, as well as other semiconductor processes. These and other embodiments, along with many of their advantages and features, are described in more detail in conjunction with the following description and accompanying figures.

[0011] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and drawings.

[0012] FIG. 4 illustrates a schematic cross-sectional view of an exemplary processing chamber in accordance with some embodiments of the present technology; [0013] FIG. 4 illustrates a schematic cross-sectional view of an exemplary substrate support in accordance with some embodiments of the present technology. [0014] FIG. 4 illustrates a schematic plan view of an exemplary substrate support in accordance with some embodiments of the present technology. [0015] FIG. 6 illustrates exemplary operations in a method of semiconductor processing according to some embodiments of the present technology.

[0016] Some of the figures are included as schematic representations. It is to be understood that the drawings are for illustrative purposes and should not be considered to scale unless specifically stated to be to scale. Further, as schematic illustrations, the diagrams are provided to aid understanding and may not include all aspects or information compared to a realistic representation and may include material exaggerated for illustrative purposes. There is

[0017] In the accompanying figures, similar components and/or functions may have the same reference labels. Moreover, various components of the same type may be distinguished by following the reference numerals with letters that distinguish similar components. Where only the first reference number is used herein, the description is applicable to any one of similar components having the same first reference number, regardless of letter.

[0018] Many material deposition processes can be sensitive to temperature. In various processing systems, the substrate support can serve as a heat source for the substrate during deposition. When the manufacturing process is performed, several layers of material can form on the substrate, which can put a lot of stress on the substrate. In many cases, these stresses can cause a certain amount of substrate deflection. Electrostatic chucking can counteract the effects of many deflections to maintain a flatter substrate, which maintains more uniform contact across the substrate support, which in turn can counteract more uniform contact across the substrate. Uniform heating may be maintained.

[0019] As stresses increase and can cause more pronounced wafer bowing, many conventional techniques either increase the chucking voltage to overcome the higher stresses, or otherwise reduce the pressure on the chamber. One may try to counteract the wafer bow by changing the part or process. Increasing the chucking voltage may have limited benefit as the stress increases, and increasing the chucking voltage alone may have undesirable effects. For example, many monopole chucks receive a uniform voltage bias across the electrodes. The electric field lines tend to concentrate at the center of the substrate because the electric flux may be less lossy at the center of the substrate. This opposing force may overcome wafer deflection caused by some film stress, but as the voltage increases, the force eventually pulls the radial edge of the substrate away from the substrate support. there is a possibility. As a result, uniform temperature delivery can occur near the center of the substrate where contact with the heated substrate support can be maintained, but at the peripheral edges the gap between the substrate and support reduces heat transfer. It is possible, and a temperature gradient can appear across the substrate.

[0020] Temperature gradients across the substrate can have a number of effects. For example, some deposition operations may increase deposition at higher temperatures, while other deposition operations may decrease deposition at higher temperatures. In the first case where edge deflection may occur on the substrate, a center-peak deposition process may occur. In the latter scenario, edge-to-peak deposition processes can occur. Prior art may have attempted to overcome these effects by adjusting alternative aspects of the process. For example, some substrate supports may try to compensate for heat loss with multi-zone heaters that can provide more heat to the edge regions. However, in addition to wasting energy, gaps can make it more difficult to produce uniform heat transfer. Additionally, changing the process conditions or flow through the chamber to compensate for non-uniform deposition may require greater customization of parts to counteract each unique chamber feature. As a result, many conventional techniques continue to cause greater temperature and deposition non-uniformities.

[0021] The present technology overcomes these problems by incorporating a multi-zone electrostatic chuck. By providing a pedestal system that can adjust the chucking force at multiple locations across the substrate support, temperature discontinuities can be overcome by providing more uniform contact across the substrate surface. This allows for more uniform temperature distribution across the substrate and may improve deposition thickness across the substrate for temperature sensitive depositions.

Although the remainder of the disclosure routinely identifies specific deposition processes utilizing the disclosed techniques, the systems and methods are equally applicable to other deposition and etch chambers and processes that may occur in the chambers described. One thing is easy to understand. Therefore, the technology should not be considered limited to use only with these particular deposition processes or chambers. This disclosure discusses one possible system and chamber that may include components according to embodiments of the present technology before additional modifications and adjustments to this system according to embodiments of the present technology are described.

[0023] FIG. 1 illustrates a cross-sectional view of an exemplary processing chamber 100 according to some embodiments of the present technology. The diagram may provide an overview of a system incorporating one or more aspects of the present technology and/or may provide an overview of a system capable of performing one or more operations in accordance with embodiments of the present technology. Additional details of the chamber 100 or the method implemented can be further described below. Although chamber 100 may be utilized to form film layers in accordance with some embodiments of the present technology, it should be understood that the method may equally be performed in any chamber in which film formation may occur. be. The processing chamber 100 may include a chamber body 102 , a substrate support 104 disposed within the chamber body 102 , and a lid assembly 106 coupled to the chamber body 102 and enclosing the substrate support 104 within a processing region 120 . . Substrate 103 may be provided to processing region 120 through opening 126, which may be conventionally sealed for processing using a slit valve or door. A substrate 103 can be seated on a substrate support surface 105 during processing. Substrate support 104 may be rotatable along axis 147 along which shaft 144 of substrate support 104 may be positioned, as indicated by arrow 145 . Alternatively, the substrate support 104 can be lifted and rotated as needed during the deposition process.

[0024] A plasma profile modulator 111 may be positioned within the processing chamber 100 to control the plasma distribution across the substrate 103 positioned on the substrate support 104 . Plasma profile modulator 111 can include a first electrode 108 that can be positioned adjacent chamber body 102 and can separate chamber body 102 from other components of lid assembly 106 . First electrode 108 may be part of lid assembly 106 or may be a separate sidewall electrode. The first electrode 108 may be an annular or ring-shaped member and may be a ring electrode. The first electrode 108 can be a continuous loop around the circumference of the processing chamber 100 surrounding the processing region 120 or can be discontinuous at selected locations as desired. The first electrode 108 may also be a perforated electrode, such as a perforated ring or mesh electrode, or it may be a plate electrode, such as a secondary gas distributor, for example.

[0025] One or more isolators 110a, 110b, which may be dielectric materials such as ceramics or metal oxides, such as aluminum oxide and/or aluminum nitride, contact the first electrode 108 and can be electrically and thermally isolated from gas distributor 112 and chamber body 102 . Gas distributor 112 may define apertures 118 for distributing process precursors into processing region 120 . The gas distributor 112 may be coupled with a first power source 142 such as an RF generator, an RF power source, a DC power source, a pulsed DC power source, a pulsed RF power source, or any other power source that may be coupled with the processing chamber. In some embodiments, first power source 142 may be an RF power source.

[0026] Gas distributor 112 may be a conductive gas distributor or a non-conductive gas distributor. Gas distributor 112 may also be formed from conductive and non-conductive components. For example, the body of gas distributor 112 may be conductive while the faceplate of gas distributor 112 may be non-conductive. The gas distributor 112 may be powered by, for example, a first power supply 142 as shown in FIG. 1, or the gas distributor 112 may be ground coupled in some embodiments.

[0027] The first electrode 108 may be coupled to a first conditioning circuit 128 that may control the ground path of the processing chamber 100. FIG. First conditioning circuit 128 may include a first electronic sensor 130 and a first electronic controller 134 . The first electronic controller 134 may be or include a variable capacitor or other circuit element. The first regulation circuit 128 may be or include one or more inductors 132 . First conditioning circuit 128 may be any circuit that allows variable or controllable impedance under the plasma conditions present in process region 120 during processing. In some embodiments as shown, the first conditioning circuit 128 may include a first circuit leg and a second circuit leg coupled in parallel between ground and the first electronic sensor 130. . A first circuit leg may include a first inductor 132A. A second circuit leg may include a second inductor 132 B coupled in series with the first electronic controller 134 . A second inductor 132 B may be disposed between the first electronic controller 134 and a node connecting both the first and second circuit legs to the first electronic sensor 130 . The first electronic sensor 130 can be a voltage or current sensor and can be coupled with the first electronic controller 134, which can allow some degree of closed-loop control of plasma conditions within the processing region 120. .

[0028] A second electrode 122 may be coupled to the substrate support 104 . The second electrode 122 may be embedded within the substrate support 104 or bonded to the surface of the substrate support 104 . The second electrode 122 can be a plate, perforated plate, mesh, wire screen, or any other distributed arrangement of conductive elements. The second electrode 122 can be a conditioning electrode, for example, by a conduit 146, such as a cable having a selected resistance, such as 50 ohms, disposed on the shaft 144 of the substrate support 104. can be coupled with the adjustment circuit 136 of The second conditioning circuit 136 can have a second electronic sensor 138 and a second electronic controller 140, which can be a second variable capacitor. A second electronic sensor 138 , which may be a voltage or current sensor, may be coupled with a second electronic controller 140 to further control plasma conditions within the processing region 120 .

[0029] A third electrode 124 , which may be a bias electrode and/or an electrostatic chucking electrode, may be coupled to the substrate support 104 . A third electrode may be coupled to a second power supply 150 through a filter 148, which may be an impedance matching circuit. The second power supply 150 can be DC power, pulsed DC power, RF bias power, pulsed RF source or bias power, or in some embodiments second power supply 150 can be RF bias power.

[0030] The lid assembly 106 and substrate support 104 of Figure 1 may be used in any processing chamber for plasma or thermal processing. During operation, processing chamber 100 can provide real-time control of plasma conditions within processing region 120 . Substrate 103 can be placed on substrate support 104 and process gases can flow through lid assembly 106 using inlet 114 according to any desired flow plan. Gases may exit processing chamber 100 through outlet 152 . Power may be coupled with gas distributor 112 to establish a plasma within processing region 120 . In some embodiments, the substrate can be electrically biased using the third electrode 124 .

[0031] Energizing the plasma in the processing region 120 may establish a potential difference between the plasma and the first electrode 108 . A potential difference may also be established between the plasma and the second electrode 122 . The electronic controllers 134 , 140 can then be used to adjust the flow characteristics of the ground paths represented by the two adjustment circuits 128 and 136 . The setpoints can be supplied to the first adjustment circuit 128 and the second adjustment circuit 136 to provide independent control of the deposition rate and center-to-edge plasma density uniformity. In embodiments where the electronic controllers can both be variable capacitors, the electronic sensors can independently adjust the variable capacitors to maximize deposition rate and minimize thickness non-uniformity.

[0032] Each of the adjustment circuits 128, 136 can have a variable impedance that can be adjusted using the respective electronic controller 134, 140. FIG. If the electronic controllers 134, 140 are variable capacitors, the capacitance range of each variable capacitor and the inductance of the first inductor 132A and the second inductor 132B can be selected to provide the impedance range. This range may depend on the frequency and voltage characteristics of the plasma, and may minimize the capacitance range of each variable capacitor. Therefore, if the capacitance of the first electronic controller 134 is minimal or maximal, the impedance of the first conditioning circuit 128 may be high, resulting in minimal aerial or lateral coverage over the substrate support. A plasma shape is created. As the capacitance of the first electronic controller 134 approaches the value that minimizes the impedance of the first conditioning circuit 128 , the airborne range of the plasma is maximized, effectively covering the entire working area of the substrate support 104 . can be covered. As the capacitance of the first electronic controller 134 deviates from the minimum impedance setting, the plasma shape can contract from the chamber walls and the airborne range of the substrate support can be reduced. The second electronic controller 140 can have a similar effect, increasing and decreasing the air coverage of the plasma on the substrate support as the capacitance of the second electronic controller 140 can be varied. can be done.

[0033] The electronic sensors 130, 138 may be used to regulate the respective circuits 128, 136 in a closed loop. Depending on the sensor type used, a current or voltage setpoint can be attached to each sensor, which determines the adjustments to the respective electronic controllers 134, 140 to minimize deviations from the setpoint. Control software can be provided to As a result, the plasma shape can be selected and dynamically controlled during processing. Although the preceding discussion is based on electronic controllers 134, 140, which may be variable capacitors, any electronic component with adjustable characteristics may be used to provide adjustable impedance to adjustment circuits 128 and 136. It should be understood that it is possible

[0034] FIG. 2 illustrates a schematic cross-sectional view of an exemplary substrate support 200 according to some embodiments of the present technology. Substrate support 200 may be included in chamber 100 described above, or any other processing chamber in which electrostatic chucking may be used. Substrate support 200 may include additional details of substrate support 104 described above, and may include any of the materials, components, or properties as previously described.

[0035] The substrate support 200 can be a pedestal as shown, including a platen 205 and a stem 210 that can be coupled to the platen. The platen can be or include a ceramic material or any other dielectric material in some embodiments, and can be configured to support a semiconductor substrate across the surface of the platen. As noted above, the substrate support 200 may include any of the components described above, including heating elements or other components, and the substrate support 200 functions as a coordinated chucking mechanism to provide substrate One or more conductive meshes can be included that can provide individually controlled chucking areas across the support.

[0036] As shown, substrate support 200 may include a first conductive mesh 215 incorporated within platen 205 . The first conductive mesh 215 can be configured to operate as a first electrostatic chucking mesh for clamping the substrate to the substrate support. The first conductive mesh can extend radially or laterally across the platen and can substantially or completely cover an area across the substrate support, which is where the voltage is applied to the first conductive mesh 215 . can provide a clamping force or an electrostatic force across the substrate when applied to the substrate. The first conductive mesh 215 can include apertures or gaps, as shown, which allow one or more holes to pass through the first conductive mesh, as further described below. It may facilitate passage of components.

The substrate support 200 can also include one or more additional conductive meshes, which work in concert with the first conductive mesh 215 in some embodiments of the present technology. , can provide adjustable chucking control along one or more regions of the substrate support. For example, a second conductive mesh 220 may be incorporated within platen 205 and configured to act as a second chucking mesh. As further exemplified and shown below, the second conductive mesh 220 can be characterized by an annular shape, and the substrate between the first conductive mesh 215 and the surface of the platen on which the substrate can be seated. It can be arranged in the support 200 . In other embodiments, second conductive mesh 220 may be a circular mesh characterized by a smaller diameter than the diameter of first conductive mesh 215 .

[0038] The second conductive mesh 220 can be characterized by an outer annular radius that is equal to or similar to the outer diameter of the first conductive mesh 215 in some embodiments. The second conductive mesh 220 can be characterized by an inner annular radius that can be any distance toward the central axis through the pedestal, considering some additional chucking mesh incorporated within the pedestal support. obtain. For example, as shown, substrate support 200 may include some additional chucking mesh to provide additional control areas for electrostatic chucking. As explained earlier, substrate deflection can be either tensile or compressive, so enhanced chucking at different regions of the substrate is mostly required to accommodate the substrate being processed. It may offer benefits that apply during all processes. Thus, in some embodiments of the present technology, the substrate support includes, in addition to the base chucking mesh, one or more, two or more, three or more, four or more, five or more, six or more, Or more additional chucking meshes can be included.

[0039] As shown, the substrate support 200 may include four additional chucking meshes distributed in separate zones of the substrate support and covering the base chucking mesh. For example, in addition to the second conductive mesh 220, a third conductive mesh 225 can be incorporated within the platen 205 and configured to act as a third chucking mesh. A third conductive mesh 225 can be included within the inner annular radius of the second conductive mesh 220 as shown. The third conductive mesh 225 can also be characterized by an annular shape, although in some embodiments the mesh can be characterized by a diameter smaller than that of the first conductive mesh 215, but circular. Or it can be characterized by a shape similar to the first conductive mesh 215 . A fourth conductive mesh 230 may be incorporated within the platen 205 and configured to act as a fourth chucking mesh. The fourth conductive mesh 230 may be included within the inner annular radius of the third conductive mesh and may be annular or circular as described above, depending on any additional meshes. A fifth conductive mesh 235 may be incorporated within the platen and contained within the inner annular radius of the fourth conductive mesh 230 . The mesh may also be annular or circular as shown and, when included as the innermost mesh, may extend coaxially along a central axis through the substrate support. Any number or size of meshes shown may be included within the substrate support, and the substrate support may or may not include any of the additional meshes shown, in accordance with embodiments of the present technology. be understood.

[0040] As shown, in some embodiments, each of the additional chucking meshes can be coplanar within the substrate support and concentric about a central axis through the substrate support. be able to. Additional chucking meshes may also be coaxial with first conductive mesh 215 . As shown, a gap, such as an annular gap, may be maintained between each additional mesh to allow individual manipulation. In some embodiments, the substrate support may be a dielectric or ceramic material capable of maintaining electrical isolation of individual meshes for manipulation.

[0041] Each conductive mesh incorporated within the pedestal may be coupled with a power source 240. FIG. In some embodiments, each conductive mesh can be independently operable from a single power source, while in some embodiments each conductive mesh is coupled with a separate power source. be able to. Each power supply can be configured to provide a voltage to the conductive mesh for electrostatic chucking. Electrostatic chucking may nominally apply voltages of about 200 V or less to hold the substrate during semiconductor processing. In accordance with embodiments of the present technology, when multiple meshes are incorporated within the substrate support, a smaller voltage may be utilized to maintain the clamping effect by the first conductive mesh 215, while additional Power can be applied to each of the other conductive meshes to provide adjustable clamping at several locations across the substrate. Since additional chucking meshes can be used to provide specific chucking voltages for each individual region, reducing the voltage applied to the main or base chucking mesh, such as first conductive mesh 215, Minimal chucking can be provided to maintain substrate position for processing. Thus, in some embodiments, depending on the configuration of the conductive mesh, the voltage applied to the first conductive mesh can be about 400V or less, and about 350V or less, about 300V or less, about The voltage may be 250V or less, about 200V or less, about 150V or less, about 100V or less, about 80V or less, about 60V or less, about 50V or less, or less. It should be understood that any voltages discussed throughout this disclosure may be of any polarity and any meshes discussed may be operated in either polarity in embodiments of the present technology. For example, in embodiments of the present technology, all meshes can either be operated with the same polarity or with different polarities.

[0042] When a voltage is applied to any of the additional conductive meshes, the voltage can operate cumulatively with the voltage applied by the first conductive mesh, which is the additional conductive mesh. Additional chucking can be provided to the substrate within the regions associated with the mesh. Each of the additional meshes can be operated at any voltage above about 50V, about 100V or more, about 150V or more, about 200V or more, about 250V or more, about 300V or more, about 350V or more, about 400V or more, about It can be operated at voltages above 450V, above about 500V, or above.

[0043] Consequently, when the cumulative effect of each mesh is applied, depending on the voltage applied to the first conductive mesh, the voltage can be from about 50V or less to about 50V or more in a particular region. , up to and including the combined voltage in any particular region, any or more of the combinations of voltages recited, or increasing within any voltage or voltage range encompassed within the recited ranges. can be done. Although there can be a correlation between increasing applied voltage and the ability to increase contact at an area of the substrate, increasing the voltage beyond a certain threshold as discussed above can result in , the clamping force being applied can bend, deform, or break the substrate. Thus, in some embodiments, the second voltage can be maintained at or below about 1,100 V, at or below about 1,000 V, at or below about 900 V, at or below about 800 V. can be done.

[0044] In some embodiments, one or more thermocouples may be incorporated into the system to determine or estimate the temperature profile within a region along the substrate or substrate support. Based on temperature discrepancies within the substrate support, such as higher or lower temperatures, inferences can be made to determine contact problems with the substrate. Therefore, temperature measurements can be used to determine whether to increase or decrease chucking in particular regions to compensate for temperature effects that can lead to non-uniform deposition. For example, thermocouple leads can extend through the substrate support stem 210, and thermocouples 250 can be positioned or associated within each region of the substrate support for temperature measurements. As shown, if four additional chucking meshes are included, four thermocouples can be included with individual thermocouples associated with individual regions for each associated chucking mesh. In embodiments, any number of additional chucking meshes and/or thermocouples may be incorporated within the substrate support to provide increased chucking or measurement in any number of areas.

[0045] Because the first conductive mesh can always be manipulated and additional conductive meshes can be manipulated based on process needs, in some embodiments, loss or Leakage may occur. Thus, in some embodiments, material 245 can be placed between the first chucking mesh and each other overlying chucking. The material can be any electrically insulating material, and in some embodiments the material is also thermally conductive to maintain sufficient heat transfer from the underlying heater element(s) to the substrate. can be gender. For example, a mica sheet or other electrically and/or thermally conductive material with a first electrically conductive mesh and another electrically conductive mesh included between the first electrically conductive mesh and the surface of the substrate support. can be placed between In addition, the mica sheet also extends into a first conductive mesh that can be extended to connect electrode connectors or couplings and/or thermocouples with overlying electrodes or for positioning within the substrate support. It can extend vertically through the gaps or apertures that are formed. This may further provide isolation between components in some embodiments.

[0046] In operation, the voltage can be applied in several ways. For example, a base voltage for capacitive coupling can be applied to the first conductive mesh 215, which can be the minimum voltage in some embodiments. Additional conductive mesh can be engaged to increase positional chucking of the substrate depending on the deflection or profile of the wafer. For example, in some embodiments where the radial edge of the substrate may be bowed away from the substrate support, a second conductive mesh 220 may be engaged to reduce the voltage applied to this region. can be increased. Similarly, depending on the deposition profile, chucking can be increased or decreased in specific areas by tuning the chucking in either of the conductive meshes. For example, in addition to increasing positioning clamping by engaging a particular conductive mesh, some embodiments provide a particular Areas can effectively reduce chucking within a particular area. It should be understood that any other number of adjustments are also encompassed by the present technology, and the examples discussed are not intended to limit the present technology.

[0047] FIG. 3 illustrates a schematic plan view of an exemplary substrate support 200 according to some embodiments of the present technology, and may show a top view of the substrate support 200 described above. It should be understood that the substrate support may include any of the features, components, or properties of any other substrate support discussed elsewhere. As indicated, some annular properties of the additional chucking mesh can be seen in this figure. For example, each of second conductive mesh 220, third conductive mesh 225, fourth conductive mesh 230, and fifth conductive mesh 235 can be viewed to illustrate the corresponding coverage area. can. In addition, gaps are shown between each individual chucking mesh in which interaction between the conductive meshes can be limited. Within each gap is found a first conductive mesh 215, which can be extended across the substrate support for clamping across the substrate as previously described.

[0048] FIG. 4 illustrates exemplary operations in a method 400 of semiconductor processing according to some embodiments of the present technology. The method can be practiced in one or more chambers, including any of the chambers described above, including any of the substrate supports described above, along with any other aspect of the systems or chambers described above. be able to. Method 400 may include any number of operations that may or may not be specifically associated with some embodiments of methods in accordance with the present technology. For example, many of the operations have been described to provide a broader range of structure formation, are not material to the art, or could be performed by alternative methodologies as would be readily appreciated. For example, and as previously described, the operations can be performed prior to delivery of the substrate to a processing chamber, such as processing chamber 100 described above, and method 400 may apply some or all aspects of substrate support 200 described above. can be run with or without

[0049] At operation 405, method 400 may include clamping a semiconductor substrate on a substrate support within a processing region of the semiconductor processing chamber. The substrate can be clamped by engaging a first conductive mesh of the substrate support, such as the first conductive mesh 215 described above, which can extend across the substrate support. At operation 410, one or more additional conductive meshes within the substrate support may be engaged. The one or more additional conductive meshes may include at least one annular or circular mesh, or any other shape of mesh that overlays the first conductive mesh. The first conductive mesh can engage the substrate at a first clamping voltage, such as any voltage described above. One or more additional conductive meshes can then engage regions of the substrate at a second clamping voltage that is higher than the first clamping voltage. In some embodiments, due to the cumulative effect of manipulating the secondary conductive mesh, one or more additional conductive meshes are operated at a lower voltage than the first conductive mesh while operating at a lower voltage than the first conductive mesh. The cumulative effect allows the substrate to be further clamped. For example, if the first conductive mesh is operated at 100V, the second conductive mesh can be operated at 50V in certain areas of the substrate support. Thus, the area corresponding to the second conductive mesh may be engaged at 150V, for example, while other areas of the substrate may be engaged at 100V. It will be understood that any other combination or chucking scenario is similarly encompassed as described above and is also encompassed by the present technology.

[0050] Semiconductor processing operations can then be performed in operation 415, which can include deposition, etching, or any other process that can benefit from electrostatic chucking as described. . In some embodiments, one or more temperatures may be monitored across the substrate or substrate support at optional operation 420 . Temperature can be used to determine whether a uniform process can be run or whether temperature effects may be occurring. In some embodiments, these readings or measurements can be used to adjust the chucking voltage in one or more regions of the substrate support. For example, in one non-limiting embodiment, the substrate temperature can be lower, which can be caused by lack of complete contact. This may be recorded as a reduced temperature at the substrate or substrate support, or the temperature of the substrate support may be higher due to reduced heat transfer, for example. In response, the chucking voltage of the associated chucking mesh may be increased in that region or otherwise adjusted in optional operation 425, thereby providing more uniform voltage over the region of the substrate. can provide good heat transfer. Further, in subsequent processing, such as deposition processing, thickness measurements across the substrate may correlate with reduced area contact on the substrate. Accordingly, subsequent processing can increase or decrease chucking in one or more relevant regions to accommodate thickness variations and improve uniformity across the substrate.

[0051] Methods and components according to embodiments of the present technology may be utilized to improve deposition or formation of materials. By providing increased control of chucking across the substrate support, the uniformity of temperature distribution can be improved, which can improve the processing performed.

[0052] In the foregoing description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details, or with additional details.

[0053] Having disclosed several embodiments, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Additionally, some well-known processes and elements have not been described to avoid unnecessarily obscuring the technology. Therefore, the above description should not be taken as limiting the scope of the technology. Additionally, while a method or process may be described in a sequential or step-by-step manner, it should be understood that operations may be performed concurrently or in a different order than that described.

[0054] When a range of values is presented, unless the context clearly dictates otherwise, each intervening value between the upper and lower limits of that range is also specifically disclosed to the smallest unit of the lower limit. It is understood that Any narrower range between any stated value or any intervening value in a stated range, as well as any other stated or intervening value in that stated range, is also included. The upper and lower limits of these smaller ranges may be individually included or excluded, and each range in which neither, neither, or both limits are included in the narrower range is also included in the technology. and to the extent specified, any specifically excluded limitations apply. Where the stated range includes one or both of the limits, ranges excluding either or both of the included limits are also included.

[0055] As used in this specification and the appended claims, the singular forms "a," "an," and "the" refer to Includes multiple references unless explicitly stated. Thus, for example, reference to "precursor" includes reference to a plurality of such precursors, and reference to "layer" includes one or more layers as well as those known to those skilled in the art. Including references to equivalents, etc.

[0056] Also, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include ( s))" and the terms "including" when used in the specification and claims specify the presence of a stated feature, integer, component or step. , but does not exclude the presence or addition of one or more other features, integers, components, steps, acts, or groups.

Claims (20)

a pedestal including a platen configured to support a semiconductor substrate across a surface of the platen;
a first conductive mesh embedded within the platen and configured to operate as a first chucking mesh and extending radially across the platen; and embedded within the platen, a first a second conductive mesh configured to operate as two chucking meshes, characterized by an annular shape and disposed between the first conductive mesh and the surface of the platen; A semiconductor processing chamber, comprising: embedded within the platen and configured to operate as a third chucking mesh, contained within an inner annular radius of the second conductive mesh, and between the first conductive mesh and the platen; 3. The semiconductor processing chamber of claim 1, further comprising a third conductive mesh positioned between said surface. 3. The semiconductor processing chamber of claim 2, wherein said second conductive mesh and said third conductive mesh are coplanar within said platen. 4. The semiconductor processing chamber of claim 3, wherein said second conductive mesh and said third conductive mesh are separated by an annular gap. 5. The semiconductor processing chamber of claim 4, further comprising: a first thermocouple associated with said second conductive mesh; and a second thermocouple associated with said third conductive mesh. 3. The semiconductor processing chamber of claim 1, wherein said first conductive mesh and said second conductive mesh are operable independently from a power source. 3. The semiconductor processing chamber of claim 1, further comprising a sheet of mica disposed between said first conductive mesh and said second conductive mesh. The sheet of mica extends into apertures formed in the first conductive mesh, and electrode connectors extend through the apertures and the sheet of mica to form the second mesh. 8. The semiconductor processing chamber of Claim 7, electrically coupled to the conductive mesh. 2. The semiconductor processing chamber of claim 1, further comprising at least two additional conductive meshes axially aligned with said first conductive mesh and said second conductive mesh. the platen configured to support a semiconductor substrate across a surface of the platen;
a first conductive mesh embedded within the platen and configured to operate as a first chucking mesh and extending radially across the platen; and embedded within the platen, a first a second conductive mesh configured to operate as two chucking meshes, characterized by an annular shape and disposed between the first conductive mesh and the surface of the platen; substrate support pedestal. embedded within the platen and configured to operate as a third chucking mesh, contained within an inner annular radius of the second conductive mesh, and between the first conductive mesh and the platen; 11. The substrate support pedestal of Claim 10, further comprising a third conductive mesh disposed between said surface. 12. The substrate support pedestal of claim 11, further comprising: a first thermocouple associated with said second conductive mesh; and a second thermocouple associated with said third conductive mesh. 12. The substrate support pedestal of claim 11, wherein said second conductive mesh and said third conductive mesh are coplanar within said platen. 14. The substrate support pedestal of claim 13, wherein said second conductive mesh and said third conductive mesh are separated by an annular gap. 11. The substrate support pedestal of claim 10, wherein said first conductive mesh and said second conductive mesh are operable within said substrate support independently from a power source. 11. The substrate support pedestal of claim 10, further comprising a sheet of mica disposed between said first conductive mesh and said second conductive mesh. The sheet of mica extends into apertures formed in the first conductive mesh, and electrode connectors extend through the apertures and the sheet of mica to form the second mesh. 17. The substrate support pedestal of Claim 16, electrically coupled to the conductive mesh. 11. The substrate support pedestal of claim 10, further comprising at least two additional conductive meshes axially aligned with said first conductive mesh and said second conductive mesh. clamping a substrate onto the substrate support by engaging a first conductive mesh of the substrate support that extends across the substrate support;
engaging a second conductive mesh of the substrate support, the second conductive mesh comprising an annular mesh overlying the first conductive mesh; a conductive mesh engages the substrate at a first clamping voltage and the second conductive mesh engages the substrate at a second clamping voltage higher than the first clamping voltage. A method of semiconductor processing comprising: engaging said second conductive mesh of a support; and performing a semiconductor processing operation on said substrate. wherein the second conductive mesh is characterized by an annular shape, the substrate support further comprises a third conductive mesh, the second conductive mesh and the third conductive mesh are coplanar. 20. The semiconductor processing method of claim 19 above.

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