JP2023183209A - Sputtering apparatus and film deposition method - Google Patents

Abstract

To provide a sputtering apparatus and a film deposition method capable of suppressing a generation of an abnormal discharge in a magnetron sputtering of a target material in a liquid phase state.SOLUTION: A sputtering apparatus according to an aspect of the invention includes a chamber, a substrate support part, a container, a magnetic circuit, and a rotation mechanism. The chamber is configured such that a reduced pressure atmosphere can be maintained. The substrate support part is arranged in the chamber and supports a substrate. The container has a concave part formed on a surface, the concave part being capable of accommodating a target material in a liquid phase state. The magnetic circuit is arranged facing a rear surface of the container and has a magnet part for forming a magnetic field in a surface side. The rotation mechanism has a first rotation shaft connected to the magnetic circuit and rotates the magnetic circuit around the first rotation shaft.SELECTED DRAWING: Figure 1

Description

The present invention relates to a reactive sputtering apparatus using a target material in a liquid phase and a film forming method thereof.

In recent years, reactive sputtering apparatuses using target materials in a liquid phase have been proposed. For example, Patent Document 1 discloses that a gallium nitride thin film is formed on a substrate by sputtering a metal gallium target with plasma while irradiating nitrogen radicals onto a substrate placed in a vacuum chamber from the discharge port of a radical gun unit. A sputtering device is described.

International Publication No. 2019/167715

In a reactive sputtering device that uses a target material in a liquid phase, a film made of plasma reactants is formed on the liquid surface of the target material, and the formation of the film is particularly noticeable in the non-erosion region of the liquid surface of the target material. Proceed to. On the other hand, when magnetron sputtering is performed using a metal material in a liquid phase (hereinafter also referred to as liquid metal) as a target material, the Lorentz force acts on the particles of the metal material due to the electric and magnetic fields applied to the liquid metal, causing convection in the liquid metal. cause. Since convection occurs non-uniformly due to the distribution or strength of the electric field or magnetic field within the target plane, local retention or scattering of the film tends to occur. Since the film is insulating, it becomes charged when exposed to plasma, which causes abnormal discharge.

In view of the above circumstances, an object of the present invention is to provide a sputtering apparatus and a film forming method that can suppress the occurrence of abnormal discharge during magnetron sputtering of a target material in a liquid phase.

A sputtering apparatus according to one embodiment of the present invention includes a chamber, a substrate support, a container, a magnetic circuit, and a rotation mechanism.
The chamber is configured to be able to maintain a reduced pressure atmosphere.
The substrate support part is disposed within the chamber and supports a substrate.
The container has a recess formed on its surface that can accommodate the target material in a liquid phase.
The magnetic circuit includes a magnet portion that is arranged to face the back surface of the container and forms a magnetic field on the surface side.
The rotation mechanism has a first rotation shaft connected to the magnetic circuit, and rotates the magnetic circuit around the first rotation shaft.

Since the sputtering apparatus of the present invention is equipped with a rotation mechanism that rotates the magnetic circuit, the magnetic field formed on the target surface due to the rotation of the magnetic circuit moves relative to the target surface, and the plasma distribution is periodically changed. change to This expands the erosion area of the target material and prevents the growth of a film on the liquid surface, thereby suppressing the occurrence of abnormal discharge.

The first rotation axis may be located eccentrically with respect to the center of the container.
Thereby, the non-erosion region can be made as small as possible, so that the occurrence of abnormal discharge can be further suppressed.

The substrate support part has a second rotation axis capable of rotating the substrate around its center, and the second rotation axis is arranged at an eccentric position with respect to the center of the container. You can.

The substrate support section may include a heating section that can heat the substrate to a predetermined temperature.

The gas introduction section may be a radical source that irradiates the substrate with radicals of the reactive gas.

The container may have a bottom wall and a peripheral wall, and the bottom wall and the peripheral wall may form an obtuse angle of 120 degrees or more.

The sputtering apparatus may further include a shield section. The shield portion is disposed on the surface of the container with a gap therebetween, and shields the periphery of the recess from plasma.

A film forming method according to one embodiment of the present invention is a film forming method using the sputtering apparatus, comprising:
Introducing a reactive gas from the gas introduction part into the chamber maintained in a reduced pressure atmosphere,
The target material is deposited on the substrate by sputtering the target material housed in the container while rotating the magnetic circuit by the rotation mechanism.

According to the present invention, it is possible to suppress the occurrence of abnormal discharge during magnetron sputtering of a target material in a liquid phase.

1 is a schematic configuration diagram showing a sputtering apparatus according to an embodiment of the present invention. FIG. 3 is an enlarged sectional view of a main part of a sputtering source in the sputtering apparatus. FIG. 3 is a schematic plan view showing the relationship between a container and a magnetic circuit in the sputtering source. FIG. 3 is an explanatory diagram showing one function of the sputtering apparatus.

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic configuration diagram showing a sputtering apparatus 100 according to an embodiment of the present invention. In the figure, the X-axis, Y-axis, and Z-axis are three axes that are orthogonal to each other, and the X-axis and Y-axis indicate the horizontal direction, and the Z-axis indicates the height direction, respectively.

The sputtering apparatus 100 of this embodiment is configured as a film forming apparatus that epitaxially grows a gallium nitride (GaN) film on a substrate W.

[overall structure]
The sputtering apparatus 100 includes a chamber 10 , a substrate support section 20 , a sputter source 30 , a reactive gas source 40 , and a control section 80 .

(chamber)
The chamber 10 is made of metal and has a film forming chamber 11 formed therein. The chamber 10 is connected to a vacuum pump 12 and is configured to be able to maintain the film forming chamber 11 in a reduced pressure atmosphere. Chamber 10 is typically connected to ground potential. Although not shown in the drawings, the chamber 10 is provided with a gate valve for carrying in and out the substrate W between the outside and the inside of the chamber 10 .

(Board support part)
The substrate support section 20 is installed on the top surface of the chamber 10. The substrate support section 20 has a substrate holder 21 arranged in the film forming chamber 11 . The substrate holder 21 has a cylindrical shape, and an annular claw portion 22 is provided at the lower open end thereof to support the peripheral edge of the substrate W with the film-forming surface of the substrate W facing the bottom of the chamber 10. .

The substrate support section 20 further includes a motor 23 having a rotation shaft 23a (second rotation shaft) that rotates the substrate holder 21 around the Z-axis. The motor 23 is installed outside the chamber 10 (in the atmosphere), and the rotation shaft 23a is connected to the substrate holder 21 via a rotation introduction mechanism 24 with a vacuum seal function. The rotation shaft 23a is connected to the center of the upper surface of the substrate holder 21 so that the substrate holder 21 can be rotated around its axis. Substrate holder 61 is connected to ground potential.

Note that as the substrate W, a semiconductor substrate is used. Examples of the semiconductor substrate include a gallium nitride substrate, a sapphire substrate, a silicon substrate, and the like. The size of the substrate W is not particularly limited, and in this embodiment, an 8-inch wafer is used.

The substrate support section 20 further includes a heating section 25 that can heat the substrate W to a predetermined temperature. The heating unit 25 is, for example, a resistance heating type heater or a lamp heater, is disposed in a stationary state within the substrate holder 21 (for example, on the top surface of the chamber 10), and is configured to be able to heat the entire back surface of the substrate W. The predetermined temperature is not particularly limited, and is set to a temperature necessary for epitaxial growth of the gallium nitride film deposited on the substrate W (eg, 300° C. or higher and 900° C. or lower).

(reactive gas source)
The reactive gas source 40 is a radical gun that generates nitrogen radicals 47. The reaction gas source 40 includes a reaction tube 41 , a coil 42 provided around the reaction tube 41 , and a housing section 43 that accommodates the reaction tube 41 and the coil 42 .

The housing section 43 is installed at the bottom of the chamber 10 , and the inside of the housing section 43 communicates with the film forming chamber 11 . A gas source 44 that supplies a reaction gas to the inside of the reaction tube 41 and a high frequency power source 45 that inputs high frequency power to the coil 42 are installed outside the housing section 43 (in the atmosphere). The coil 42 forms an alternating magnetic field inside the reaction tube 41 when a high frequency power source is input thereto, activates the reaction gas supplied into the reaction tube 41, and generates nitrogen radicals 47. The amount of reactant gas supplied is not particularly limited, and is, for example, 10 sccm. The frequency and power of the high frequency power source 45 are not particularly limited, and for example, the frequency is 13.56 MHz and the power is 400W.

The generated nitrogen radicals 47 are released into the film forming chamber 11 through the opening 46 of the storage section 43. The opening of the reaction tube 41 is arranged toward the substrate support section 20, and the nitrogen radicals 47 released from the reaction tube 41 are irradiated onto the film-forming surface of the substrate W supported by the substrate support section 20.

The reactant gas is typically nitrogen ( _N2 ). In addition to this, other gases containing nitrogen such as hydrogen nitride and nitrogen oxide can be used.

(Sputter source)
Sputter source 30 is installed at the bottom of chamber 10 . The sputtering source 30 includes a container 31 in which a recess 32 capable of accommodating the target material T is formed on the surface thereof, a magnetic circuit 50 disposed opposite to the back surface of the container 31, and a magnetic circuit 50 parallel to the Z-axis direction. It has a rotation mechanism 60 that can rotate around an axis.

The container 31 is formed into a disc shape made of a metal material having a higher melting point than the target material T. Preferably, the container 31 is made of a material that has relatively good wettability with the target material T. In this embodiment, the target material T is metal gallium (Ga), and the container 31 is made of stainless steel. The container 31 is installed inside a cylindrical adhesion prevention plate 33 provided at the bottom of the chamber 10 .

FIG. 2 is an enlarged cross-sectional view of the main parts of the sputtering source 30. As shown in FIG. The recess 32 is typically a circular recess, and is formed on the surface 31a of the container 31 facing the film forming chamber 11. The center of the recess 32 coincides with the center of the container 31 (central axis C1). The container 31 has a bottom wall 311 and a peripheral wall 312, and the recess 32 is formed between the bottom wall 311 and the peripheral wall 312. The size of the recess 32 is not particularly limited, and is, for example, approximately 100 mm (4 inches) in diameter and approximately 5 mm in depth.

The container 31 is arranged at a position facing the substrate support section 20 in the Z-axis direction. As shown in FIG. 1, the center of the container 31 (central axis C1) is arranged at a position eccentric to the rotation axis 23a (central axis C3) of the substrate holder 21. As shown in FIG.

As shown in FIG. 2, the boundary between the bottom wall 311 and the peripheral wall 312, which corresponds to the corner 321 of the recess 32, is preferably formed with a curved surface so that no corner is formed. This makes it difficult to form a gap between the corner 321 of the recess 32 and the liquid phase target material T (liquid metal), and can suppress the occurrence of abnormal discharge (splash) caused by the gap. . In FIG. 2, the radius of curvature of the corner 321 is, for example, 2 mm or more. Further, it is preferable that the angle formed between the bottom wall portion 311 and the peripheral wall portion 312 is an obtuse angle of 120° or more. This increases the wettability between the corner 321 of the recess 32 and the liquid metal, thereby suppressing the formation of the void.

A back surface (rear surface) 31b of the container 32 opposite to the front surface 31a is formed as a flat surface. The back surface 31b of the container 32 may be joined to a backing plate 34 (see FIG. 1) made of copper or the like and having excellent thermal conductivity. The joining method is not particularly limited, and any suitable method such as brazing or welding can be used. The backing plate 34 may be provided with a cooling passage through which a cooling medium circulates. Alternatively, a cooling passage through which a cooling medium circulates may be provided inside the bottom wall portion 311 and the peripheral wall portion 312 of the container 31. Thereby, the container 31 can be protected from the heat of the plasma P (FIG. 1) formed during sputtering film formation.

The container 31 is further connected to a sputter power source 35 to constitute a sputter electrode. The sputter power source 35 is a high frequency power source (RF), but is not limited to this, and may be a direct current power source (DC). The container 31 may be connected to a sputter power source 35 via a backing plate 34. The frequency and power of the high frequency power source are not particularly limited, and for example, the frequency is 13.56 MHz and the power is 80W.

Note that, as shown in FIG. 1, the sputtering source 30 includes a gas source 37 that supplies sputtering gas to the film forming chamber 11. Sputter gas is a gas for forming plasma, and is typically argon (Ar). The introduction position of the sputtering gas is not particularly limited, and for example, the sputtering gas is introduced between the adhesion prevention plate 33 and the container 31. The amount of sputtering gas introduced is not particularly limited, and is, for example, 60 sccm.

Further, a shield plate 36 connected to the ground potential is arranged around the recess 32 of the container 31. The shield plate 36 is an annular metal plate having an inner diameter slightly smaller than the opening diameter of the recess 32 . As shown in FIG. 2, the shield plate 36 is arranged to face the surface 31a of the recess 31 with a gap G interposed between the shield plate 36 and the surface 31a of the recess 31.

The shield plate 36 functions as a shield portion that protects the surface 31a of the container 31 from sputtering by the plasma P by shielding the surface 31a of the container 31 from the plasma P. Further, since the shield plate 36 has an inner diameter smaller than the opening diameter of the recess 32, abnormal discharge at the interface between the container 31 and the target material T can be suppressed. The size of the gap G is not particularly limited as long as conduction with the container 31 can be avoided, and in this embodiment, the number of occurrences of abnormal discharge can be significantly reduced within the range of 1 mm or more and 1.5 mm or less. This was confirmed.

The magnetic circuit 50 is arranged facing the back surface 31b of the container 31. The magnetic circuit 50 is placed outside the chamber 10 (in the atmosphere). The magnetic circuit 50 includes a magnet section 51 that forms a magnetic field B on the surface 31a side of the container 31, a yoke 52 that supports the magnet section 51, and a housing section 53 that accommodates the magnet section 51 and the yoke 52.

The magnet section 51 is composed of a plurality of magnets. For example, as shown in FIG. 2, the magnet section 51 includes a first magnet section 51a and a plurality of second magnet sections 51b arranged in an annular shape around the first magnet section 51a. The first magnet part 51a and the second magnet part 51b have different magnetic poles facing the back surface 31b of the container 31, for example, the first magnet part 51a has a north pole and the second magnet part 51b has a south pole. The magnetic lines of force formed between the first magnet 51a and the second magnet 51b leak toward the surface 31a of the container 31, and the leaked magnetic field B is a magnetic field that generates magnetron discharge (plasma P) directly above the recess 32. form the ingredients.

The yoke 52 has a disc shape and is made of a magnetic material with high magnetic permeability. The diameter of the yoke 52 is not particularly limited, and is, for example, 3 inches. The first magnet 51a is arranged at the center of the yoke 52, and the second magnet 51b is arranged concentrically with the center of the yoke 52. The center of the yoke 52 coincides with the center of the magnetic circuit 50 (center axis C2), and is arranged at an eccentric position with respect to the center of the container 51 (center axis C1).

The rotation mechanism 60 has a rotating table 61 that supports the magnetic circuit 50, and a rotating shaft 62a (first rotating shaft) connected to the rotating table 61, and a drive that rotates the magnetic circuit 50 around the rotating shaft 62a. It has a motor 62. The drive motor 62 is arranged outside the accommodating part 53 of the magnetic circuit 50, and the rotating shaft 62a penetrates the bottom of the accommodating part 53 and is connected to the rotating table 61.

The rotating shaft 62a is arranged on the central axis C1 of the container 31. That is, the rotating shaft 62a is arranged at a position eccentric to the central axis C2 of the magnetic circuit 50. Therefore, the magnetic circuit 50 is rotated eccentrically with respect to the center of the container 51 by the drive motor 62 . The amount of eccentricity ΔC between the central axis C1 and the central axis C2 is not particularly limited, and is, for example, 10 mm or more and 20 mm or less.

(control unit)
The control unit 80 is installed outside the chamber 10 (in the atmosphere) and centrally controls the operations of the sputtering apparatus 100 including the substrate support 20, the sputtering source 30, the reactive gas source 40, and the like. The control unit 80 can be realized by hardware elements used in computers, such as a CPU (Central Processing Unit), a RAM (Random Access Memory), and a ROM (Read Only Memory), and necessary software. In place of or in addition to the CPU, PLDs (Programmable Logic Devices) such as FPGAs (Field Programmable Gate Arrays), DSPs (Digital Signal Processors), and other ASICs (Application Specific Integrated Circuits) are used. good.

[Film formation method]
Next, a typical operation of the sputtering apparatus 100 of this embodiment configured as described above will be described.

After the substrate W is supported by the substrate holder 21 of the substrate support section 20, the film forming chamber 11 is evacuated to a predetermined pressure (for example, 0.3 Pa) by the vacuum pump 12. When the film forming chamber 11 reaches a predetermined pressure, the heating unit 25 heats the substrate W to a predetermined temperature while driving the motor 23 to rotate the substrate holder 21 and the substrate W at a predetermined rotation speed. Note that the rotation speed of the substrate W is arbitrarily adjusted to a size that allows the desired in-plane distribution to be obtained.

In the reactive gas source 40, a reactive gas (nitrogen gas) is supplied to the reaction tube 41, and a high frequency power source is input to the coil 42 to generate nitrogen radicals 47, and the generated nitrogen radicals 47 are transferred to the substrate W. It is irradiated towards.

In the sputtering source 30 , sputtering gas is supplied from the gas source 37 to the film forming chamber 11 , and high-frequency power is applied to the container 31 , so that sputtering gas (Ar) is created between the container 31 and the substrate holder 21 . A plasma P is formed. The density of the plasma P is maximum in the region where the magnetic field B of the magnetic circuit 50 leaking to the surface 31a side of the container 31 is perpendicular to the electric field, and the target material accommodated in the recess 32 of the container 31 mainly exists in this maximum density plasma region. T is sputtered (magnetron sputtering).

The target material T, which is metallic gallium, is melted by the heat of the plasma P, and the surface (liquid surface) of the target material T is sputtered by Ar ions generated by the plasma P. The sputtered target particles 38 (FIG. 1) scatter toward the substrate W and react with nitrogen radicals 47 on the film-forming surface (lower surface) of the substrate W. Gallium nitride particles, which are reaction products of the target particles 38 and nitrogen radicals 47, grow epitaxially using the heat of the substrate W, thereby forming a gallium nitride film on the substrate W.

Here, in a reactive sputtering apparatus using a target material in a liquid phase, a film made of a plasma reactant is likely to be formed on the liquid surface of the target material. Particularly, film formation progresses significantly in the non-erosion region of the liquid surface of the target material. On the other hand, when magnetron sputtering is performed using a metal material in a liquid phase (liquid metal) as a target material, a Lorentz force acts on the particles of the metal material due to the electric and magnetic fields applied to the liquid metal, causing convection in the liquid metal. Since convection occurs non-uniformly due to the distribution or strength of the electric field or magnetic field within the target plane, local retention or scattering of the film tends to occur. Since the film is insulating, in conventional sputtering apparatuses of this type, the film becomes charged when exposed to plasma, which may cause abnormal discharge.

On the other hand, since the sputtering apparatus 100 of the present embodiment includes the rotation mechanism 60 that rotates the magnetic circuit 50, the magnetic field formed on the target surface by the rotation of the magnetic circuit 50 is relative to the target surface. , and periodically change the plasma distribution. This eliminates the non-uniformity of the liquid surface convection of the target material T due to the Lorentz force. Furthermore, due to the rotation of the magnetic circuit 50, the erosion area of the target material T is expanded. Thereby, it is possible to prevent the film from growing on the liquid surface, and also to suppress the occurrence of abnormal discharge due to the charging of the film. As a result, particles generated due to abnormal discharge can be prevented from reaching the substrate W, and deterioration in the film quality of the gallium nitride film can be prevented.

Further, in this embodiment, the rotating shaft 62a of the magnetic circuit 50 is arranged at a position eccentric from the center of the container 31 by an eccentric amount ΔC. Thereby, the non-erosion region can be made as small as possible, so that the occurrence of abnormal discharge can be further suppressed.

In this embodiment, the rotation speed of the magnetic circuit 50 is set to be 3 rpm or more and 20 rpm or less. When the rotational speed of the magnetic circuit 50 is less than 3 rpm, the stirring effect of the magnetic circuit 50 on the target material T is weak and the amount of movement of the liquid level per unit time is small, so the formation of a film cannot be prevented and the effect of suppressing abnormal discharge is low. becomes smaller. Furthermore, when the rotational speed of the magnetic circuit 50 exceeds 20 rpm, the stirring action of the target material T becomes too strong, and the target material T tends to overflow from the container 31.

Further, in this embodiment, the eccentricity ΔC, which is the distance between the central axis C1 of the container 13 and the central axis C2 of the magnetic circuit 50, is preferably 10 mm or more. If the amount of eccentricity ΔC is less than 10 mm, a non-erosion region will be generated in the center of the target material T, and the formation of a film and the occurrence of abnormal discharge due to this cannot be suppressed.

FIG. 3 is a schematic plan view showing the relationship between the recess 32 of the container 31 and the magnetic circuit 50 when viewed from the Z-axis direction. In this embodiment, as shown in FIG. 3, the distance between the central axis C2 of the magnetic circuit 50 and the position B⊥ where the leakage magnetic field B of the magnetic circuit 50 formed on the surface 31a side of the container 31 is perpendicular to the electric field. When is a [mm], the eccentricity amount ΔC [mm] is determined so as to satisfy the following relationship.
(a-15)≦ΔC≦(a+15)

Further, when the radius of curvature of the corner 321 (FIG. 2) of the recess 32 is 4 mm, the above a, D and It is preferable that ΔC be adjusted so as to satisfy, for example, the following relationship.
D>ΔC+a
Thereby, since the position B⊥ is located in the liquid surface area of the target material T, high-density plasma can be stably formed on the liquid surface of the target material T.

Furthermore, in this embodiment, as shown in FIG. 4, the eccentricity is adjusted so that the area S1 of the erosion region of the target material T is 90% or more, more preferably 93% or more of the area S2 of the liquid surface of the target material T. The amount ΔC or the layout of the magnet section 51 of the magnetic circuit 50 is adjusted. As a result, the area in which the film is formed can be made smaller, so that the amount of abnormal discharge generated can be effectively suppressed.

Although the embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to the above-described embodiments and can be modified in various ways.

For example, in the above embodiments, gallium (Ga) was used as an example of the target material T (liquid metal), but other examples include gallium-aluminum alloy (GaAl), gallium-indium alloy (GaIn), magnesium Other metallic materials such as (Mg) are applicable. Note that the target material T is not limited to a metal material, and may be a semimetal such as silicon (Si) or germanium (Ge).

Furthermore, in the above embodiments, a sputtering apparatus for performing reactive sputtering of metal gallium was used as an example. The present invention is also applicable to a co-sputtering apparatus (multiple sputtering apparatus) that sputters simultaneously.

DESCRIPTION OF SYMBOLS 10... Chamber 11... Film-forming chamber 20... Substrate support part 21... Substrate holder 23a... Rotation axis (2nd rotation axis)
25... Heating section 30... Sputtering source 31... Container 32... Concavity 40... Reactant gas source 50... Magnetic circuit 60... Rotating mechanism 62a... Rotating shaft (second rotating shaft)
100...Sputtering device P...Plasma T...Target material (liquid metal)
W...Substrate

Claims (8)

A chamber configured to maintain a reduced pressure atmosphere,
a substrate support part disposed in the chamber and supporting the substrate;
a gas introduction part that introduces a reactive gas into the chamber;
a container having a recess formed on its surface capable of accommodating a target material in a liquid phase;
a magnetic circuit having a magnet section that is arranged to face the back surface of the container and forms a magnetic field on the surface side;
A sputtering apparatus comprising: a rotation mechanism that has a first rotation axis connected to the magnetic circuit and rotates the magnetic circuit around the first rotation axis. The sputtering apparatus according to claim 1,
The first rotating shaft is arranged at an eccentric position with respect to the center of the container. The sputtering apparatus. The sputtering apparatus according to claim 2,
The substrate support part has a second rotation axis capable of rotating the substrate around its center,
The second rotating shaft is arranged at a position eccentric to the center of the container. The sputtering apparatus. The sputtering apparatus according to claim 3,
The substrate support section has a heating section that can heat the substrate to a predetermined temperature. Sputtering apparatus. The sputtering apparatus according to any one of claims 1 to 4,
The gas introduction section is a radical source that irradiates the substrate with radicals of the reactive gas. The sputtering apparatus. The sputtering apparatus according to any one of claims 1 to 4,
The container has a bottom wall part and a peripheral wall part, and the angle formed by the bottom wall part and the peripheral wall part is an obtuse angle of 120 degrees or more. The sputtering apparatus. The sputtering apparatus according to any one of claims 1 to 4,
The sputtering apparatus further includes a shield part that is disposed on the surface of the container with a gap therebetween and shields the periphery of the recessed part from plasma. A film forming method using the sputtering apparatus according to claim 1,
Introducing a reactive gas from the gas introduction part into the chamber maintained in a reduced pressure atmosphere,
A film forming method, wherein the target material contained in the container is sputtered while rotating the magnetic circuit by the rotation mechanism, thereby forming the target material onto the substrate.

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