JP2023121271A - Light emitting device, projector, and display - Google Patents

Abstract

To provide a light emitting device that can reduce light emission unevenness.SOLUTION: A light emitting device has: a substrate; a columnar part aggregate formed of a plurality of columnar parts each having a first semiconductor layer, a second semiconductor layer, and a luminous layer; and a first electrode and a second electrode provided separate from each other on a side of the columnar aggregate opposite to the substrate. The first semiconductor layer is provided between the substrate and the luminous layer. The first electrode overlaps a first columnar part of the plurality of columnar parts when seen from a lamination direction of the first semiconductor layer and the luminous layer, and is electrically connected with the second semiconductor layer of the first columnar part. The second electrode overlaps a second columnar part of the plurality of columnar parts when seen from the lamination direction, and is electrically connected with the second semiconductor layer of the second columnar part.SELECTED DRAWING: Figure 1

Description

The present invention relates to light emitting devices, projectors, and displays.

Semiconductor lasers are expected to be high-intensity next-generation light sources. Among them, semiconductor lasers to which nanocolumns are applied are expected to realize light emission with a narrow emission angle and high output due to the photonic crystal effect of the nanocolumns.

For example, Patent Literature 1 describes a light-emitting device that includes a plurality of columnar nanowires, a p-type transparent electrode arranged on top of the plurality of nanowires, and an electrode pad connected to the p-type transparent electrode. It is

JP 2009-147140 A

However, in the light-emitting device described in Patent Document 1, a voltage drop in the p-type transparent electrode causes a difference in the amount of injected current between the nanowires close to the electrode pads and the nanowires far from the electrode pads. If there is a difference in the amount of injected current, the light emission intensity will be different, resulting in uneven light emission.

One aspect of the light-emitting device according to the present invention is
a substrate;
a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer a columnar section aggregate composed of a plurality of columnar sections having
a first electrode and a second electrode provided separately from each other on the opposite side of the columnar assembly from the substrate;
has
The first semiconductor layer is provided between the substrate and the light emitting layer,
The first electrode overlaps with a first columnar portion of the plurality of columnar portions when viewed from the stacking direction of the first semiconductor layer and the light emitting layer, and overlaps with the second semiconductor layer of the first columnar portion. electrically connected,
The second electrode overlaps a second columnar portion of the plurality of columnar portions when viewed from the stacking direction, and is electrically connected to the second semiconductor layer of the second columnar portion.

One aspect of the projector according to the present invention is
It has one mode of the light-emitting device.

One aspect of the display according to the present invention is
It has one mode of the light-emitting device.

BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing which shows typically the light-emitting device which concerns on this embodiment. 1 is a plan view schematically showing a light emitting device according to this embodiment; FIG. FIG. 4 is a cross-sectional view for explaining current flowing through an ITO electrode; 4A to 4C are cross-sectional views schematically showing manufacturing steps of the light-emitting device according to the present embodiment; 4A to 4C are cross-sectional views schematically showing manufacturing steps of the light-emitting device according to the present embodiment; The top view which shows typically the light-emitting device which concerns on the 1st modification of this embodiment. The top view which shows typically the light-emitting device which concerns on the 2nd modification of this embodiment. Sectional drawing which shows typically the light-emitting device which concerns on the 3rd modification of this embodiment. The top view which shows typically the light-emitting device which concerns on the 4th modification of this embodiment. The top view which shows typically the light-emitting device which concerns on the 5th modification of this embodiment. FIG. 2 is a diagram schematically showing a projector according to the embodiment; FIG. FIG. 2 is a plan view schematically showing the display according to the embodiment; Sectional drawing which shows typically the display which concerns on this embodiment.

Preferred embodiments of the present invention will be described in detail below with reference to the drawings. It should be noted that the embodiments described below do not unduly limit the scope of the invention described in the claims. Moreover, not all the configurations described below are essential constituent elements of the present invention.

1. Light emitting device 1.1. Configuration First, a light emitting device according to this embodiment will be described with reference to the drawings. FIG. 1 is a cross-sectional view schematically showing a light emitting device 100 according to this embodiment. FIG. 2 is a plan view schematically showing the light emitting device 100 according to this embodiment. 1 is a sectional view taken along line II of FIG.

The light emitting device 100 has, for example, a substrate 10, a laminate 20, a lower electrode 50, and an upper electrode 60, as shown in FIGS. The light emitting device 100 is, for example, a semiconductor laser. For the sake of convenience, illustration of some members constituting the light emitting device 100 is omitted in FIG.

The substrate 10 is, for example, a Si substrate, a GaN substrate, a sapphire substrate, a SiC substrate, or the like.

The laminate 20 is provided on the substrate 10 as shown in FIG. In the illustrated example, the laminate 20 is provided on the substrate 10 . The laminate 20 has, for example, a buffer layer 22 , a plurality of columnar portions 30 and an insulating layer 40 .

In this specification, when the light emitting layer 34 of the columnar section 30 is used as a reference in the stacking direction of the laminate 20 (hereinafter also simply referred to as the “stacking direction”), the second semiconductor layer 36 of the columnar section 30 from the light emitting layer 34 , and the direction from the light-emitting layer 34 to the first semiconductor layer 32 of the columnar portion 30 is referred to as "down." Moreover, the direction perpendicular to the stacking direction is also referred to as the “in-plane direction”. The “stacking direction of the stack 20 ” is the stacking direction of the first semiconductor layer 32 and the light emitting layer 34 .

A buffer layer 22 is provided on the substrate 10 . The buffer layer 22 is, for example, an n-type GaN layer doped with Si. Although not shown, a mask layer for growing the plurality of columnar portions 30 may be provided on the buffer layer 22 . The mask layer is, for example, a titanium layer, a silicon oxide layer, a titanium oxide layer, an aluminum oxide layer, or the like.

The columnar portion 30 is provided on the buffer layer 22 . The columnar portion 30 has a columnar shape protruding upward from the buffer layer 22 . In other words, the columnar portion 30 protrudes upward from the substrate 10 through the buffer layer 22 . The columnar part 30 is also called, for example, a nanocolumn, nanowire, nanorod, or nanopillar. The planar shape of the columnar portion 30 is, for example, a polygon such as a hexagon, or a circle.

The diameter of the columnar portion 30 is, for example, 50 nm or more and 500 nm or less. By setting the diameter of the columnar portion 30 to 500 nm or less, it is possible to obtain the light-emitting layer 34 of high quality crystals and to reduce the strain inherent in the light-emitting layer 34 . Thereby, the light generated in the light emitting layer 34 can be amplified with high efficiency.

The “diameter of the columnar portion 30” is the diameter when the planar shape of the columnar portion 30 is circular, and is the diameter of the minimum inclusive circle when the planar shape of the columnar portion 30 is not circular. . For example, if the planar shape of the columnar part 30 is polygonal, the diameter of the columnar part 30 is the diameter of the smallest circle that includes the polygon. The diameter of the smallest circle that can be included inside. This is the same for the "diameter of the first portion 66a" and the "diameter of the second portion 66b" which will be described later.

A plurality of columnar portions 30 are provided. The plurality of columnar portions 30 are provided separated from each other. The interval between adjacent columnar portions 30 is, for example, 1 nm or more and 500 nm or less. The plurality of columnar portions 30 are arranged at a predetermined pitch in a predetermined direction when viewed from the stacking direction. The plurality of columnar portions 30 are arranged, for example, in a triangular lattice pattern or a square lattice pattern. The plurality of columnar portions 30 can exhibit the effect of photonic crystals.

The “pitch of the columnar portions 30” is the distance between the centers of the columnar portions 30 adjacent to each other in a predetermined direction. The “center of the columnar portion 30” means the center of the circle when the planar shape of the columnar portion 30 is circular, and the center of the minimum containing circle when the planar shape of the columnar portion 30 is not circular. be. For example, if the planar shape of the columnar portion 30 is polygonal, the center of the columnar portion 30 is the center of the smallest circle that includes the polygon. It is the center of the smallest enclosing circle.

A plurality of columnar portions 30 constitute one columnar portion assembly 31 . The laminate 20 has a columnar assembly 31 . The columnar section assembly 31 is provided on the substrate 10 with the buffer layer 22 interposed therebetween. In the columnar portion assembly 31, the pitches of the plurality of columnar portions 30 are the same.

The columnar portion 30 has a first semiconductor layer 32, a light emitting layer 34, and a second semiconductor layer 36, as shown in FIG.

The first semiconductor layer 32 is provided on the buffer layer 22 . The first semiconductor layer 32 is provided between the substrate 10 and the light emitting layer 34 . The first semiconductor layer 32 is a first conductivity type semiconductor layer. The first semiconductor layer 32 is, for example, an n-type GaN layer doped with Si.

The light emitting layer 34 is provided between the first semiconductor layer 32 and the second semiconductor layer 36 . The light-emitting layer 34 emits light when current is injected into it. The light emitting layer 34 has, for example, a well layer and a barrier layer. The well layer and the barrier layer are i-type semiconductor layers that are not intentionally doped with impurities. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer. The light emitting layer 34 has an MQW (Multiple Quantum Well) structure composed of a well layer and a barrier layer.

The number of well layers and barrier layers forming the light-emitting layer 34 is not particularly limited. For example, only one well layer may be provided, and in this case, the light emitting layer 34 has an SQW (Single Quantum Well) structure.

The second semiconductor layer 36 is provided on the light emitting layer 34 . The second semiconductor layer 36 is provided between the light emitting layer 34 and the upper electrode 60 . The second semiconductor layer 36 is a semiconductor layer of a second conductivity type different from the first conductivity type. The second semiconductor layer 36 is, for example, a p-type GaN layer doped with Mg. The first semiconductor layer 32 and the second semiconductor layer 36 are clad layers that have the function of confining light in the light emitting layer 34 . In the illustrated example, the top surface of the columnar portion 30 is configured as a facet surface. Although not shown, the upper surface of the columnar portion 30 may be composed of a c-plane, or may be composed of a facet plane and a c-plane.

Although not shown, an OCL (OCL) consisting of an i-type InGaN layer and a GaN layer is provided between the first semiconductor layer 32 and the light emitting layer 34 and between the light emitting layer 34 and the second semiconductor layer 36 at least one of them. Optical Confinement Layer) may be provided. The second semiconductor layer 36 may also have an EBL (Electron Blocking Layer) made of a p-type AlGaN layer.

In the light emitting device 100, the p-type second semiconductor layer 36, the i-type light emitting layer 34 intentionally not doped with impurities, and the n-type first semiconductor layer 32 form a pin diode. In the light-emitting device 100, when a forward bias voltage of a pin diode is applied between the lower electrode 50 and the upper electrode 60, current is injected into the light-emitting layer 34, and recombination of electrons and holes occurs in the light-emitting layer 34. . This recombination produces light emission. The light generated in the light-emitting layer 34 propagates in the in-plane direction, forms a standing wave due to the photonic crystal effect of the plurality of columnar portions 30, and receives gain in the light-emitting layer 34 to cause laser oscillation. Then, the light emitting device 100 emits the +1st-order diffracted light and the −1st-order diffracted light as laser light in the lamination direction.

Although not shown, a reflective layer may be provided between the substrate 10 and the buffer layer 22 or under the substrate 10 . The reflective layer is, for example, a DBR (Distributed Bragg Reflector) layer. The light generated in the light emitting layer 34 can be reflected by the reflective layer, and the light emitting device 100 can emit light only from the upper electrode 60 side.

The insulating layer 40 is provided on the opposite side of the columnar assembly 31 from the substrate 10 . The insulating layer 40 is provided on the side of the plurality of columnar portions 30 opposite to the substrate 10 . In the illustrated example, the insulating layer 40 is provided on the buffer layer 22 and the contact electrode 62 . The insulating layer 40 surrounds the plurality of columnar portions 30 when viewed from the stacking direction. A contact hole 42 is provided in the insulating layer 40 . The contact hole 42 penetrates the insulating layer 40 in the stacking direction. The insulating layer 40 is, for example, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, a polyimide layer, or the like.

A lower electrode 50 is provided on the buffer layer 22 . In the illustrated example, a portion of the buffer layer 22 is dug, and the lower electrode 50 is provided in the dug portion of the buffer layer 22 . The buffer layer 22 may be in ohmic contact with the lower electrode 50 . The lower electrode 50 is electrically connected with the first semiconductor layer 32 . In the illustrated example, the lower electrode 50 is electrically connected to the first semiconductor layer 32 through the buffer layer 22 . As the lower electrode 50, for example, a layer in which a Cr layer, a Ni layer, and an Au layer are laminated in this order from the buffer layer 22 side is used. The lower electrode 50 is one electrode for injecting current into the light emitting layer 34 .

The upper electrode 60 is provided on the second semiconductor layer 36 . Furthermore, the upper electrode 60 is provided on the insulating layer 40 . The second semiconductor layer 36 may be in ohmic contact with the upper electrode 60 . The upper electrode 60 is the other electrode for injecting current into the light emitting layer 34 . Details of the upper electrode 60 will be described later.

Although the InGaN-based light-emitting layer 34 has been described above, various materials that can emit light when a current is injected can be used as the light-emitting layer 34 depending on the wavelength of the emitted light. can. For example, AlGaN-based, AlGaAs-based, InGaAs-based, InGaAsP-based, InP-based, GaP-based, and AlGaP-based semiconductor materials can be used.

Moreover, the light emitting device 100 is not limited to a laser, and may be an LED (Light Emitting Diode).

1.2. Upper Electrode, etc. The upper electrode 60 has, for example, a contact electrode 62, a first electrode 64, a second electrode 66, and a third electrode 68, as shown in FIGS. Further, the light emitting device 100 has, for example, an insulating layer 70, a first wiring 80, a second wiring 82, a first current control element 90, and a second current control element 92.

For the sake of convenience, in FIG. is omitted.

The contact electrodes 62 are provided on the plurality of columnar portions 30, as shown in FIG. The columnar portion 30 is in contact with the contact electrode 62 . In the illustrated example, the light emitting device 100 has dummy columnar portions 3 that are not in contact with the contact electrodes 62 . The dummy columnar portion 3 is a columnar portion that does not emit light. Seen from the stacking direction, the columnar section assembly 31 is surrounded by, for example, a plurality of dummy columnar sections 3 . The dummy columnar portion 3 is formed in the process of forming the columnar portion 30 .

The contact electrodes 62 are provided between the plurality of columnar portions 30 and the first electrodes 64 and the second electrodes 66 . A contact electrode 62 is provided on the second semiconductor layer 36 . The second semiconductor layer 36 may be in ohmic contact with the contact electrode 62 . The planar shape of the contact electrode 62 is, for example, a circle.

The contact electrode 62 is made of, for example, a metal material. The contact electrode 62 is, for example, one in which a Pd layer, a Pt layer, a Ni layer, and an Au layer are stacked in this order from the second semiconductor layer 36 side, or a single metal layer. The electrical resistivity of the contact electrode 62 is smaller than the electrical resistivity of the first electrode 64 and the electrical resistivity of the second electrode 66 . Thereby, the contact resistance between the upper electrode 60 and the second semiconductor layer 36 can be reduced compared to the case where the first electrode 64 and the second electrode 66 are in contact with the second semiconductor layer 36 .

The thickness of the contact electrode 62 is smaller than the thickness of the first electrode 64 and the thickness of the second electrode 66, for example. Thereby, the amount of light passing through the contact electrode 62 can be increased.

The first electrode 64 is provided on the opposite side of the columnar assembly 31 from the substrate 10 . A first electrode 64 is provided on the contact electrode 62 . The first electrode 64 is provided between the contact electrode 62 and the third electrode 68 . The first electrode 64 overlaps the contact hole 42 when viewed from the stacking direction. The first electrode 64 is provided in the contact hole 42 . In the example shown in FIG. 2, the planar shape of the first electrode 64 is a circle. The first electrode 64 is made of a transparent electrode material such as ITO (Indium Tin Oxide) or ZnO.

The first electrode 64 overlaps the plurality of first columnar portions 30a among the plurality of columnar portions 30 when viewed from the stacking direction. The first electrode 64 is electrically connected to the second semiconductor layer 36 of the first columnar portion 30a. The first electrode 64 is electrically connected to the second semiconductor layer 36 of the first columnar portion 30a via, for example, the contact electrode 62, as shown in FIG.

The second electrode 66 is provided on the opposite side of the columnar assembly 31 from the substrate 10 . A second electrode 66 is provided on the contact electrode 62 . A second electrode 66 is provided between the contact electrode 62 and the insulating layer 70 . The second electrode 66 is provided apart from the first electrode 64 . In the example shown in FIG. 2, the planar shape of the second electrode 66 is ring-shaped. The area of the second electrode 66 is larger than the area of the first electrode 64 when viewed from the stacking direction. The material of the second electrode 66 is, for example, the same as that of the first electrode 64 . In addition, in the present embodiment, the thickness of the first electrode 64 is the same as the thickness of the second electrode 66, but this is not limiting, and the thickness of the first electrode 64 and the thickness of the second electrode 66 may be different. good. For example, the thickness of the first electrode 64 may be greater than or equal to the thickness of the second electrode 66 .

The second electrode 66 overlaps the plurality of second columnar portions 30b among the plurality of columnar portions 30 when viewed from the stacking direction. The second electrode 66 is electrically connected to the second semiconductor layer 36 of the second columnar portion 30b. The second electrode 66 is electrically connected to the second semiconductor layer 36 of the second columnar portion 30b via the contact electrode 62, for example, as shown in FIG.

The first electrode 64 may be electrically connected to the second semiconductor layer 36 of the second columnar portion 30b as long as it is electrically connected to the second semiconductor layer 36 of the first columnar portion 30a. . The second electrode 66 may be electrically connected to the second semiconductor layer 36 of the first columnar section 30a as long as it is electrically connected to the second semiconductor layer 36 of the second columnar section 30b. .

The second electrode 66, as shown in FIGS. 1 and 2, has, for example, a first portion 66a and a second portion 66b.

The first portion 66a of the second electrode 66 overlaps the contact hole 42 when viewed from the stacking direction. The first portion 66a does not overlap the insulating layer 40 when viewed from the stacking direction. In the example shown in FIG. 1 , the first portion 66 a is provided on the contact electrode 62 . As shown in FIG. 2, the first portion 66a has a shape surrounding the first electrode 64 when viewed from the stacking direction. In the illustrated example, the shape of the first portion 66a is ring-shaped.

A second portion 66b of the second electrode 66 is connected to the first portion 66a. The second portion 66b overlaps the insulating layer 40 when viewed from the stacking direction. In the example shown in FIG. 1 , the second portion 66b is provided on the inner surface of the contact hole 42 and the upper surface of the insulating layer 40 . The inner surface of contact hole 42 is side surface 41 of insulating layer 40 that defines contact hole 42 . In the illustrated example, the side surface 41 is inclined with respect to the upper surface of the substrate 10 . As shown in FIG. 2, the second portion 66b has a shape surrounding the first portion 66a when viewed from the stacking direction. In the illustrated example, the shape of the second portion 66b is ring-shaped.

The third electrode 68 is provided on the first electrode 64, as shown in FIG. Furthermore, the third electrode 68 is provided on the insulating layer 70 . In the example shown in FIG. 2, the planar shape of the third electrode 68 is a circle. The material of the third electrode 68 is, for example, the same as that of the first electrode 64 . Also, for example, the sum of the thicknesses of the first electrode 64 and the third electrode 68 is greater than that of the second electrode 66 at the portion where the first electrode 64 and the third electrode 68 are laminated.

The insulating layer 70 is provided between the first electrode 64 and the second electrode 66, as shown in FIG. The insulating layer 70 is also provided between the second electrode 66 and the third electrode 68 . The insulating layer 70 is provided on the contact electrode 62 , the second electrode 66 , the second wiring 82 and the insulating layer 40 . The insulating layer 70 is, for example, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like.

The first wiring 80 is provided on the third electrode 68 and the insulating layer 70 . The first wiring 80 is electrically connected to the first electrode 64 . In the illustrated example, the first wiring 80 is electrically connected to the first electrode 64 via the third electrode 68 . In the example shown in FIG. 2, the first wiring 80 extends from the third electrode 68 to one side. The first wiring 80 may be made of a metal material such as copper or gold, or may be made of a transparent electrode material. When the first wiring 80 is made of a transparent electrode material, the first wiring 80 may be provided integrally with the third electrode 68 .

The first wiring 80 is connected to pads (not shown). Although not shown, the pads are connected to, for example, wire bonding or FPCs (Flexible Printed Circuits) electrically connected to a power supply.

The second wiring 82 is provided on the insulating layer 40 as shown in FIG. The second wiring 82 is electrically connected to the second electrode 66 . The second wiring 82 is connected to the second portion 66b of the second electrode 66, for example. In the example shown in FIG. 2 , the second wiring 82 extends from the second electrode 66 in the direction opposite to the extending direction of the first wiring 80 . The width of the first wiring 80 and the width of the second wiring 82 may be the same. The sheet resistance of the first wiring 80 and the sheet resistance of the second wiring 82 may be the same. The second wiring 82 may be made of a metal material such as copper or gold, or may be made of a transparent electrode material. When the second wiring 82 is made of a transparent electrode material, the second wiring 82 may be provided integrally with the second electrode 66 .

The second wiring 82 is connected to pads (not shown). The pad is, for example, a pad to which the first wiring 80 is connected. That is, the first wiring 80 and the second wiring 82 are connected to a common pad. Therefore, the number of pads can be reduced by providing separate pads for the first wiring 80 and the second wiring 82 . As a result, the size of the device can be reduced. Note that the first wiring 80 and the second wiring 82 may be connected to separate pads.

The first current control element 90 is provided on the first wiring 80 as shown in FIG. The first current control element 90 controls the current supplied to the first electrode 64 by controlling the current flowing through the first wiring 80 . The second current control element 92 is provided on the second wiring 82 via the third wiring 84 . The second current control element 92 controls the current supplied to the second electrode 66 by controlling the current flowing through the second wiring 82 .

The first current control element 90 and the second current control element 92 are, for example, transistors. The first current control element 90 and the second current control element 92 may be field effect transistors (FETs). In the example shown in FIG. 2, the gate width W2 of the second current control element 92 is larger than the gate width W1 of the first current control element 90. As shown in FIG. The first current control element 90 and the second current control element 92 are made of semiconductor, for example.

1.3. Functions and Effects In the light-emitting device 100, the columnar section assembly 31 composed of the plurality of columnar sections 30, and the first electrode 64 and the second electrode 64 and the second electrodes 64 and 64 are provided on the opposite side of the columnar section assembly 31 from the substrate 10 so as to be separated from each other. an electrode 66; The first electrode 64 overlaps the first columnar portion 30a of the plurality of columnar portions 30 when viewed from the stacking direction, and is electrically connected to the second semiconductor layer 36 of the first columnar portion 30a. The second electrode 66 overlaps the second columnar portion 30b of the plurality of columnar portions 30 when viewed from the stacking direction, and is electrically connected to the second semiconductor layer 36 of the second columnar portion 30b.

Therefore, in the light-emitting device 100, the amount of current injected into the first columnar portion 30a and the amount of current injected into the second columnar portion 30b can be individually controlled. Therefore, the difference in the amount of injected current between the first columnar portion 30a and the second columnar portion 30b can be reduced. As a result, light emission unevenness can be reduced. Furthermore, it is possible to suppress the change in emission wavelength due to the difference in the amount of injected current.

The light emitting device 100 has a first current control element 90 that controls the current supplied to the first electrode 64 and a second current control element 92 that controls the current supplied to the second electrode 66 . Therefore, in the light emitting device 100, the amount of current injected into the first columnar section 30a and the amount of current injected into the second columnar section 30b by the first current control element 90 and the second current control element 92, can be controlled individually.

In the light emitting device 100, the area of the second electrode 66 is larger than the area of the first electrode 64 when viewed from the stacking direction, the first current control element 90 and the second current control element 92 are transistors, and the second current control element 92 is a transistor. Gate width W2 of control element 92 is greater than gate width W1 of first current control element 90 . Therefore, in the light-emitting device 100 , more current than that supplied to the first electrode 64 can be supplied to the second electrode 66 having a larger area than the first electrode 64 .

The light emitting device 100 has an insulating layer 40 provided on the opposite side of the columnar assembly 31 from the substrate 10 and a second wiring 82 connected to the second electrode 66 . A contact hole 42 is provided in the insulating layer 40 . The first electrode 64 overlaps the contact hole 42 when viewed from the stacking direction. The second electrode 66 has a first portion 66 a overlapping the contact hole 42 and not overlapping the insulating layer 40 and a second portion 66 b connected to the first portion 66 a and overlapping the insulating layer 40 . The second wiring 82 is connected to the second portion 66b. The first portion 66a has a shape surrounding the first electrode 64, and the second portion 66b has a shape surrounding the first portion 66a.

Here, FIG. 3 is a cross-sectional view for explaining the current flowing through the ITO electrode 1060. As shown in FIG. The thickness of the ITO electrode 1060 is reduced at the portion overlapping the gap between the adjacent columnar portions 1030 when viewed in the stacking direction. Therefore, the portion of the ITO electrode 1060 overlapping with the columnar portion 1030 provided at a position farther from the portion provided on the side surface 1041 of the ITO electrode 1060 reduces the current supplied due to the voltage drop. Further, the farther the columnar portion 1030 is located from the portion provided on the side surface 1041, the smaller the applied voltage and the smaller the injected current. Note that the side surface 1041 is the surface of the insulating layer 1040 . For the sake of convenience, FIG. 1 shows the contact electrode 62 in a simplified manner.

To address such a problem, in the light emitting device 100, the second portion 66b has a shape surrounding the first portion 66a. can be uniformly supplied to the first portion 66a.

2. Method for Manufacturing Light-Emitting Device Next, a method for manufacturing the light-emitting device 100 according to the present embodiment will be described with reference to the drawings. 4 and 5 are cross-sectional views schematically showing manufacturing steps of the light emitting device 100 according to this embodiment.

As shown in FIG. 4, a buffer layer 22 is epitaxially grown on the substrate 10 . Examples of epitaxial growth methods include MOCVD (Metal Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy).

Next, a mask layer (not shown) is formed on the buffer layer 22 . The mask layer is formed by, for example, an electron beam vapor deposition method, a sputtering method, or the like.

Next, using the mask layer as a mask, the first semiconductor layer 32, the light emitting layer 34, and the second semiconductor layer 36 are epitaxially grown on the buffer layer 22 in this order. Examples of epitaxial growth methods include MOCVD and MBE. A plurality of columnar portions 30 can be formed by this step. It should be noted that the buffer layer 22 may be partly etched by etching after the plurality of columnar portions 30 are formed.

As shown in FIG. 5, contact electrodes 62 are formed on the plurality of columnar portions 30 . The contact electrode 62 is formed by, for example, a sputtering method, a vacuum deposition method, or the like.

Next, the insulating layer 40 is formed so as to cover the multiple columnar portions 30 and the contact electrodes 62 . The insulating layer 40 is formed by a spin coating method, a CVD (Chemical Vapor Deposition) method, or the like.

Next, the insulating layer 40 is patterned to form contact holes 42 in the insulating layer 40 . Patterning is performed, for example, by photolithography and etching. Through this step, the contact electrode 62 is exposed.

As shown in FIG. 1, a first electrode 64 is formed on the contact electrode 62, a second electrode 66 is formed on the contact electrode 62, the side surface 41 of the insulating layer 40, and the top surface of the insulating layer 40, and the insulating layer A second wiring 82 is formed on 40 . The first electrode 64, the second electrode 66, and the second wiring 82 are formed by, for example, a sputtering method, a vacuum deposition method, or the like.

Next, the insulating layer 70 is formed on the second electrode 66 , the second wiring 82 and the insulating layer 40 . The insulating layer 70 is formed by, for example, a CVD method, an ALD (Atomic Layer Deposition) method, or the like.

Next, a third electrode 68 is formed on the first electrode 64 and the insulating layer 70 , a first wiring 80 is formed on the insulating layer 70 , and a third wiring 84 is formed on the insulating layer 70 . The third electrode 68, the first wiring 80, and the third wiring 84 are formed by, for example, a sputtering method, a vacuum deposition method, or the like. Through this process, the upper electrode 60 having the contact electrode 62, the first electrode 64, the second electrode 66, and the third electrode 68 can be formed.

Next, a first current control element 90 is formed on the first wiring 80 and a second current control element 92 is formed on the third wiring 84 . The first current control element 90 and the second current control element 92 are formed using known semiconductor processes.

Next, a lower electrode 50 is formed on the buffer layer 22 . The lower electrode 50 is formed by, for example, a sputtering method, a vacuum deposition method, or the like. The order of the step of forming the lower electrode 50 and the step of forming the first electrode 64 and the second electrode 66 is not particularly limited. Moreover, the order of the step of forming the lower electrode 50 and the step of forming the insulating layer 70 is not particularly limited. Moreover, the order of the step of forming the lower electrode 50 and the step of forming the third electrode 68 is not particularly limited. Also, the order of the step of forming the lower electrode 50 and the step of forming the first current control element 90 and the second current control element 92 is not particularly limited.

The light emitting device 100 can be manufactured through the above steps.

3. Modification of Light Emitting Device 3.1. First Modification Next, a light emitting device 200 according to a first modification of the present embodiment will be described with reference to the drawings. FIG. 6 is a plan view schematically showing a light emitting device 200 according to a first modified example of this embodiment.

Hereinafter, in the light-emitting device 200 according to the first modified example of the present embodiment, members having the same functions as the constituent members of the above-described light-emitting device 100 according to the present embodiment are denoted by the same reference numerals, and a detailed description thereof will be given. omitted. This is the same for light-emitting devices according to second to fifth modifications of this embodiment, which will be described later.

In the light emitting device 100 described above, as shown in FIG. 2, the area of the second electrode 66 is larger than the area of the first electrode 64 when viewed in the stacking direction, and the gate width W2 of the second current steering element 92 is 1 was larger than the gate width W1 of the current control element 90 .

On the other hand, in the light emitting device 200, as shown in FIG. 6, the area of the first electrode 64 is larger than the area of the second electrode 66 when viewed from the stacking direction, and the gate width W1 of the first current control element 90 is , is larger than the gate width W2 of the second current control element 92 . Therefore, in the light-emitting device 200 , more current than the second electrode 66 can be supplied to the first electrode 64 having a larger area than the second electrode 66 .

3.2. Second Modification Next, a light emitting device 300 according to a second modification of the present embodiment will be described with reference to the drawings. FIG. 7 is a plan view schematically showing a light emitting device 300 according to a second modified example of this embodiment.

In the light emitting device 100 described above, as shown in FIG. 2, the first portion 66a has a shape surrounding the first electrode 64 when viewed from the lamination direction. The second portion 66b had a shape surrounding the first portion 66a.

On the other hand, in the light emitting device 300, as shown in FIG. 7, the first portion 66a has a shape in which a portion 67a surrounding the first electrode 64 is opened when viewed from the stacking direction. The second portion 66b has a shape in which a portion 67b surrounding the first portion 66a is opened. The first portion 66a and the second portion 66b are, for example, C-shaped when viewed from the stacking direction.

When viewed from the stacking direction, the open portion 67a of the first portion 66a extends outward from the first electrode 64 side. The width Wa of the portion 67a is smaller than half the diameter of the first portion 66a. The width Wa is the size in the direction orthogonal to the extending direction of the portion 67a.

The part 67b released in the second portion 66b extends outward from the first electrode 64 side when viewed from the stacking direction. The width Wb of the portion 67b is smaller than half the diameter of the second portion 66b. The width Wb is the size in the direction orthogonal to the extending direction of the portion 67b.

The first wiring 80 passes through a portion 67a opened in the first portion 66a and a portion 67b opened in the second portion 66b. In the illustrated example, the portion 67a and the portion 67b are arranged linearly.

The third electrode 68 is not provided, for example. The first wiring 80 is connected to the first electrode 64 instead of the third electrode 68 . The insulating layer 70 is not provided.

In the light emitting device 300, the first portion 66a has a shape in which a portion 67a of the shape surrounding the first electrode 64 is open, and the second portion 66b has a shape of a portion 67b surrounding the first portion 66a. has an open shape, and the first wiring 80 passes through a portion 67a that is open in the first portion 66a and a portion 67b that is open in the second portion 66b. Therefore, in the light emitting device 300, the first wiring 80 can be prevented from coming into contact with the second electrode 66 without providing the insulating layer 70. FIG.

3.3. Third Modification Next, a light emitting device 400 according to a third modification of the present embodiment will be described with reference to the drawings. FIG. 8 is a cross-sectional view schematically showing a light emitting device 400 according to a third modified example of this embodiment.

As shown in FIG. 8, the light emitting device 400 differs from the light emitting device 100 described above in that the contact electrode 62 is divided into a first conductive portion 62a and a second conductive portion 62b.

The first conductive portion 62 a is provided between the plurality of columnar portions 30 and the first electrode 64 . The first electrode 64 is connected to the first conductive portion 62a. The planar shape of the first conductive portion 62a is, for example, a circle.

The second conductive portion 62 b is provided between the multiple columnar portions 30 and the second electrode 66 . The second electrode 66 is connected to the second conductive portion 62b. The planar shape of the second conductive portion 62b is, for example, a ring shape. The first conductive portion 62a and the second conductive portion 62b are separated from each other. In the illustrated example, an insulating layer 70 is provided between the first conductive portion 62a and the second conductive portion 62b.

In the light emitting device 400, the contact electrode 62 is divided into a first conductive portion 62a and a second conductive portion 62b, the first conductive portion 62a and the second conductive portion 62b are separated from each other, and the first electrode 64 is , are connected to the first conductive portion 62a, and the second electrode 66 is connected to the second conductive portion 62b. Therefore, in the light emitting device 400, compared to the case where the contact electrode 62 is not divided like the light emitting device 100, for example, it is easier to control the amount of current injected into the first columnar portion 30a by the first current control element 90. , the injection current amount injected into the second columnar portion 30b by the second current control element 92 can be easily controlled.

3.4. Fourth Modification Next, a light emitting device 500 according to a fourth modification of the present embodiment will be described with reference to the drawings. FIG. 9 is a plan view schematically showing a light emitting device 500 according to a fourth modified example of this embodiment.

In the light emitting device 100 described above, as shown in FIG. 2, the first current control element 90 and the second current control element 92 are transistors.

On the other hand, in the light emitting device 500, as shown in FIG. 9, the first current control element 90 is a wiring electrically connected to the first electrode 64, and the second current control element 92 is connected to the second electrode. 66 is a wiring electrically connected. Specifically, the first current control element 90 is the first wiring 80 . The second current control element 92 is the second wiring 82 .

In the illustrated example, the width Wβ of the second wiring 82 is greater than the width Wα of the first wiring 80 . The width Wα is the dimension in the direction orthogonal to the extending direction of the first wiring 80 . The width Wβ is the size in the direction orthogonal to the extending direction of the second wiring 82 . The sheet resistance of the second current control element 92 is lower than the sheet resistance of the first current control element 90 .

In the light emitting device 500, the first current control element 90 is a wiring electrically connected to the first electrode 64, and the second current control element 92 is a wiring electrically connected to the second electrode 66. , the area of the second electrode 66 is larger than the area of the first electrode 64 and the sheet resistance of the second current control element 92 is lower than the sheet resistance of the first current control element 90 when viewed from the stacking direction. Therefore, in the light emitting device 500 , more current can be supplied to the second electrode 66 having a larger area than the first electrode 64 than to the first electrode 64 .

3.5. Fifth Modification Next, a light emitting device 600 according to a fifth modification of the present embodiment will be described with reference to the drawings. FIG. 10 is a plan view schematically showing a light emitting device 600 according to a fifth modified example of this embodiment.

In the light emitting device 100 described above, as shown in FIG. 2, the first current control element 90 and the second current control element 92 are transistors.

On the other hand, in the light emitting device 600, as shown in FIG. 10, the first current control element 90 is a wiring electrically connected to the first electrode 64, and the second current control element 92 is connected to the second electrode. 66 is a wiring electrically connected. Specifically, the first current control element 90 is the first wiring 80 . The second current control element 92 is the second wiring 82 .

In the illustrated example, the width Wα of the first wiring 80 is greater than the width Wβ of the second wiring 82 . The width Wα is the dimension in the direction orthogonal to the extending direction of the first wiring 80 . The width Wβ is the size in the direction orthogonal to the extending direction of the second wiring 82 . The sheet resistance of the first current control element 90 is lower than the sheet resistance of the second current control element 92 . The area of the first electrode 64 is larger than the area of the second electrode 66 when viewed from the stacking direction.

In the light emitting device 600, the first current control element 90 is a wiring electrically connected to the first electrode 64, and the second current control element 92 is a wiring electrically connected to the second electrode 66. , the area of the first electrode 64 is larger than the area of the second electrode 66 when viewed in the stacking direction, and the sheet resistance of the first current control element 90 is lower than the sheet resistance of the second current control element 92 . Therefore, in the light emitting device 600 , more current than the second electrode 66 can be supplied to the first electrode 64 having a larger area than the second electrode 66 .

4. Projector Next, a projector according to the present embodiment will be described with reference to the drawings. FIG. 11 is a diagram schematically showing a projector 800 according to this embodiment.

The projector 800 has, for example, the light emitting device 100 as a light source.

The projector 800 has a housing (not shown) and a red light source 100R, a green light source 100G, and a blue light source 100B that emit red light, green light, and blue light, respectively, provided in the housing. For convenience, red light source 100R, green light source 100G, and blue light source 100B are simplified in FIG.

The projector 800 further includes a first optical element 802R, a second optical element 802G, a third optical element 802B, a first optical modulator 804R, and a second optical modulator 804G, which are provided in the housing. , a third light modulating device 804B and a projection device 808 . The first light modulating device 804R, the second light modulating device 804G, and the third light modulating device 804B are, for example, transmissive liquid crystal light valves. Projection device 808 is, for example, a projection lens.

Light emitted from the red light source 100R enters the first optical element 802R. Light emitted from the red light source 100R is collected by the first optical element 802R. Note that the first optical element 802R may have a function other than condensing. The same applies to a second optical element 802G and a third optical element 802B, which will be described later.

The light collected by the first optical element 802R enters the first optical modulator 804R. The first light modulator 804R modulates incident light according to image information. The projection device 808 then magnifies the image formed by the first light modulation device 804R and projects it onto the screen 810 .

Light emitted from the green light source 100G enters the second optical element 802G. Light emitted from the green light source 100G is collected by the second optical element 802G.

The light collected by the second optical element 802G enters the second optical modulator 804G. The second light modulator 804G modulates incident light according to image information. Then, the projection device 808 magnifies the image formed by the second light modulation device 804G and projects it onto the screen 810 .

Light emitted from the blue light source 100B enters the third optical element 802B. Light emitted from the blue light source 100B is collected by the third optical element 802B.

The light collected by the third optical element 802B is incident on the third optical modulator 804B. The third light modulator 804B modulates incident light according to image information. The projection device 808 then magnifies the image formed by the third light modulation device 804B and projects it onto the screen 810 .

The projector 800 can also have a cross dichroic prism 806 that synthesizes the light emitted from the first light modulator 804R, the second light modulator 804G, and the third light modulator 804B and guides it to the projection device 808. .

The three color lights modulated by the first light modulator 804R, the second light modulator 804G, and the third light modulator 804B are incident on the cross dichroic prism 806. FIG. The cross dichroic prism 806 is formed by pasting four rectangular prisms together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are arranged on the inner surface thereof. These dielectric multilayer films synthesize three color lights to form light representing a color image. The combined light is projected onto the screen 810 by the projection device 808 to display an enlarged image.

Note that the red light source 100R, the green light source 100G, and the blue light source 100B control the light emitting device 100 as pixels of an image according to image information, so that the first light modulation device 804R, the second light modulation device 804G, and the second light modulation device 804G are controlled. An image may be formed directly without using the three-light modulator 804B. Then, the projection device 808 may enlarge the images formed by the red light source 100R, the green light source 100G, and the blue light source 100B and project them onto the screen 810 .

Also, in the above example, a transmissive liquid crystal light valve is used as the light modulation device, but a light valve other than liquid crystal may be used, or a reflective light valve may be used. Examples of such light valves include reflective liquid crystal light valves and digital micro mirror devices. Also, the configuration of the projection device is appropriately changed according to the type of light valve used.

Further, the light source device of a scanning type image display device having a scanning means which is an image forming device for displaying an image of a desired size on a display surface by scanning the light from the light source on the screen. It can also be applied to

5. Display Next, a display according to the present embodiment will be described with reference to the drawings. FIG. 12 is a plan view schematically showing the display 900 according to this embodiment. FIG. 13 is a cross-sectional view schematically showing a display 900 according to this embodiment. In addition, in FIG. 12, the X-axis and the Y-axis are illustrated as two mutually orthogonal axes for convenience.

The display 900 has, for example, the light emitting device 100 as a light source.

A display 900 is a display device that displays an image. Images include those that display only character information. The display 900 is a self-luminous display. The display 900 has a circuit board 910, a lens array 920, and a heat sink 930, as shown in FIGS.

A drive circuit for driving the light emitting device 100 is mounted on the circuit board 910 . The drive circuit is a circuit including, for example, CMOS (Complementary Metal Oxide Semiconductor). The driving circuit drives the light emitting device 100 based on, for example, input image information. Although not shown, a translucent substrate is arranged on the circuit board 910 to protect the circuit board 910 .

The circuit board 910 has a display area 912 , a data line driving circuit 914 , a scanning line driving circuit 916 and a control circuit 918 .

The display area 912 is composed of a plurality of pixels P. As shown in FIG. The pixels P are arranged along the X and Y axes in the illustrated example.

Although not shown, the circuit board 910 is provided with a plurality of scanning lines and a plurality of data lines. For example, the scan lines run along the X-axis and the data lines run along the Y-axis. The scanning lines are connected to a scanning line driver circuit 916 . The data lines are connected to the data line driving circuit 914 . Pixels P are provided corresponding to intersections of scanning lines and data lines.

One pixel P has, for example, one light emitting device 100, one lens 922, and a pixel circuit (not shown). The pixel circuit includes a switching transistor that functions as a switch for the pixel P, the gate of the switching transistor being connected to the scanning line and one of the source or drain being connected to the data line.

The data line driving circuit 914 and the scanning line driving circuit 916 are circuits that control the driving of the light emitting device 100 forming the pixel P. FIG. A control circuit 918 controls the display of images.

Image data is supplied to the control circuit 918 from a higher-level circuit. The control circuit 918 supplies various signals based on the image data to the data line driving circuit 914 and scanning line driving circuit 916 .

When a scanning line is selected by the scanning line driving circuit 916 activating the scanning signal, the switching transistor of the selected pixel P is turned on. At this time, the data line driving circuit 914 supplies a data signal from the data line to the selected pixel P, so that the light emitting device 100 of the selected pixel P emits light according to the data signal.

Lens array 920 has a plurality of lenses 922 . For example, one lens 922 is provided for one light emitting device 100 . Light emitted from the light emitting device 100 enters one lens 922 .

A heat sink 930 is in contact with the circuit board 910 . The material of the heat sink 930 is, for example, metal such as copper or aluminum. The heat sink 930 dissipates heat generated by the light emitting device 100 .

The light-emitting device according to the above-described embodiments can be used for applications other than projectors and displays. Applications other than projectors and displays include, for example, indoor and outdoor lighting, laser printers, scanners, vehicle lights, sensing devices that use light, and light sources for communication devices. Moreover, the light emitting device according to the above-described embodiments can be used as a display device for a head mounted display.

The above-described embodiments and modifications are examples, and the present invention is not limited to these. For example, it is also possible to appropriately combine each embodiment and each modification.

The present invention includes configurations that are substantially the same as the configurations described in the embodiments, for example, configurations that have the same function, method and result, or configurations that have the same purpose and effect. Moreover, the present invention includes configurations obtained by replacing non-essential portions of the configurations described in the embodiments. In addition, the present invention includes a configuration that achieves the same effects or achieves the same purpose as the configurations described in the embodiments. In addition, the present invention includes configurations obtained by adding known techniques to the configurations described in the embodiments.

The following content is derived from the embodiment and modifications described above.

One aspect of the light-emitting device is
a substrate;
a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer a columnar section aggregate composed of a plurality of columnar sections having
a first electrode and a second electrode provided separately from each other on the opposite side of the columnar assembly from the substrate;
has
The first semiconductor layer is provided between the substrate and the light emitting layer,
The first electrode overlaps with a first columnar portion of the plurality of columnar portions when viewed from the stacking direction of the first semiconductor layer and the light emitting layer, and overlaps with the second semiconductor layer of the first columnar portion. electrically connected,
The second electrode overlaps a second columnar portion of the plurality of columnar portions when viewed from the stacking direction, and is electrically connected to the second semiconductor layer of the second columnar portion.

According to this light emitting device, unevenness in light emission can be reduced.

In one aspect of the light-emitting device,
a first current control element that controls the current supplied to the first electrode;
and a second current control element for controlling the current supplied to the second electrode.

According to this light emitting device, the amount of current injected into the first columnar section and the amount of current injected into the second columnar section are individually controlled by the first current control element and the second current control element. can do.

In one aspect of the light-emitting device,
When viewed from the stacking direction, the area of the first electrode is larger than the area of the second electrode,
the first current control element and the second current control element are transistors;
A gate width of the first current control element may be larger than a gate width of the second current control element.

According to this light emitting device, more current can be supplied to the first electrode, which has a larger area than the second electrode, than to the second electrode.

In one aspect of the light-emitting device,
When viewed from the stacking direction, the area of the second electrode is larger than the area of the first electrode,
the first current control element and the second current control element are transistors;
A gate width of the second current control element may be larger than a gate width of the first current control element.

According to this light-emitting device, the second electrode, which has a larger area than the first electrode, can be supplied with more current than the first electrode.

In one aspect of the light-emitting device,
an insulating layer provided on a side of the columnar assembly opposite to the substrate;
wiring connected to the second electrode;
has
A contact hole is provided in the insulating layer,
When viewed from the stacking direction, the first electrode overlaps the contact hole,
The second electrode is
a first portion that overlaps with the contact hole and does not overlap with the insulating layer;
a second portion connected to the first portion and overlapping the insulating layer;
has
The wiring is connected to the second portion,
The first portion has a shape surrounding the first electrode,
The second portion may have a shape surrounding the first portion.

According to this light emitting device, the current supplied from the wiring can be uniformly supplied to the first portion via the second portion.

In one aspect of the light-emitting device,
the first portion has a shape in which a part of the shape surrounding the first electrode is opened instead of the shape surrounding the first electrode;
the second portion has a shape in which a part of the shape surrounding the first portion is opened instead of the shape surrounding the first portion;
The wiring may pass through the portion released in the first portion and the portion released in the second portion.

According to this light emitting device, it is possible to prevent the wiring from contacting the second electrode without providing an insulating layer between the second electrode and the wiring.

In one aspect of the light-emitting device,
the first current control element is a wiring electrically connected to the first electrode,
the second current control element is a wiring electrically connected to the second electrode,
When viewed from the stacking direction, the area of the first electrode is larger than the area of the second electrode,
A sheet resistance of the first current control element may be lower than a sheet resistance of the second current control element.

According to this light emitting device, more current can be supplied to the first electrode, which has a larger area than the second electrode, than to the second electrode.

In one aspect of the light-emitting device,
the first current control element is a wiring electrically connected to the first electrode,
the second current control element is a wiring electrically connected to the second electrode,
When viewed from the stacking direction, the area of the second electrode is larger than the area of the first electrode,
A sheet resistance of the second current control element may be lower than a sheet resistance of the first current control element.

According to this light-emitting device, the second electrode, which has a larger area than the first electrode, can be supplied with more current than the first electrode.

One aspect of the projector is
It has one mode of the light-emitting device.

One aspect of the display is
It has one mode of the light-emitting device.

3 Dummy columnar part 10 Substrate 20 Laminated body 22 Buffer layer 30 Columnar part 30a First columnar part 30b Second columnar part 31 Aggregate of columnar parts 32 First first columnar part Semiconductor layer 34 Light-emitting layer 36 Second semiconductor layer 40 Insulating layer 41 Side surface 42 Contact hole 50 Lower electrode 60 Upper electrode 62 Contact electrode 62a First conductive portion , 62b... second conductive portion, 64... first electrode, 66... second electrode, 66a... first portion, 66b... second portion, 67a, 67b... part, 68... third electrode, 70... insulating layer, 80 First wiring 82 Second wiring 84 Third wiring 90 First current control element 92 Second current control element 100, 200, 300, 400, 500, 600 Light emitting device 800 Projector 802R First optical element 802G Second optical element 802B Third optical element 804R First optical modulator 804G Second optical modulator 804B Third optical modulator 806 Cross dichroic prism 808 Projection device 810 Screen 900 Display 910 Circuit board 912 Display area 914 Data line drive circuit 916 Scan line drive circuit 918 Control circuit 920 Lens array , 922... Lens 930... Heat sink 1030... Columnar portion 1040... Insulating layer 1041... Side surface 1060... ITO electrode

Claims (10)

a substrate;
a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer a columnar section aggregate composed of a plurality of columnar sections having
a first electrode and a second electrode provided separately from each other on the opposite side of the columnar assembly from the substrate;
has
The first semiconductor layer is provided between the substrate and the light emitting layer,
The first electrode overlaps with a first columnar portion of the plurality of columnar portions when viewed from the stacking direction of the first semiconductor layer and the light emitting layer, and overlaps with the second semiconductor layer of the first columnar portion. electrically connected,
The light-emitting device, wherein the second electrode overlaps a second columnar portion of the plurality of columnar portions when viewed from the stacking direction, and is electrically connected to the second semiconductor layer of the second columnar portion. . In claim 1,
a first current control element that controls the current supplied to the first electrode;
and a second current control element that controls the current supplied to the second electrode. In claim 2,
When viewed from the stacking direction, the area of the first electrode is larger than the area of the second electrode,
the first current control element and the second current control element are transistors;
The light-emitting device, wherein the gate width of the first current control element is larger than the gate width of the second current control element. In claim 2,
When viewed from the stacking direction, the area of the second electrode is larger than the area of the first electrode,
the first current control element and the second current control element are transistors;
The light-emitting device, wherein the gate width of the second current control element is larger than the gate width of the first current control element. In any one of claims 2 to 4,
an insulating layer provided on a side of the columnar assembly opposite to the substrate;
wiring connected to the second electrode;
has
A contact hole is provided in the insulating layer,
When viewed from the stacking direction, the first electrode overlaps the contact hole,
The second electrode is
a first portion that overlaps with the contact hole and does not overlap with the insulating layer;
a second portion connected to the first portion and overlapping the insulating layer;
has
The wiring is connected to the second portion,
The first portion has a shape surrounding the first electrode,
The light-emitting device, wherein the second portion has a shape surrounding the first portion. In claim 5,
the first portion has a shape in which a part of the shape surrounding the first electrode is opened instead of the shape surrounding the first electrode;
the second portion has a shape in which a part of the shape surrounding the first portion is opened instead of the shape surrounding the first portion;
The light-emitting device, wherein the wiring passes through the part that is free in the first part and the part that is free in the second part. In claim 2,
the first current control element is a wiring electrically connected to the first electrode,
the second current control element is a wiring electrically connected to the second electrode,
When viewed from the stacking direction, the area of the first electrode is larger than the area of the second electrode,
The light-emitting device, wherein the sheet resistance of the first current control element is lower than the sheet resistance of the second current control element. In claim 2,
the first current control element is a wiring electrically connected to the first electrode,
the second current control element is a wiring electrically connected to the second electrode,
When viewed from the stacking direction, the area of the second electrode is larger than the area of the first electrode,
The light-emitting device, wherein the sheet resistance of the second current control element is lower than the sheet resistance of the first current control element. A projector comprising the light emitting device according to claim 1 . A display comprising a light emitting device according to any one of claims 1 to 8.

Images