JP2023108372A - Method for manufacturing electronic device, and adhesive film - Google Patents

Abstract

To provide a method for manufacturing an electronic device and an adhesive film, which can achieve good precision about the location of a chip even in the case of performing a high-temperature operation test on the component composed of one of individual pieces produced by individualization.SOLUTION: A method for manufacturing an electronic device comprises the steps of: (A) preparing a structure including an adhesive film having a base material layer, a mid layer and an adhesive resin layer in this order, and an electronic component stuck to the adhesive resin layer; (B) dicing the electronic component by a dicing blade in the state of being stuck to the adhesive film; and (C) performing a characteristic evaluation on the electronic component in the state of being stuck to the adhesive film in a temperature environment of 60°C or higher and 200°C or below. In the method, as to the adhesive film, a compressive strain rate S is 3% or less in an environment of 150°C.SELECTED DRAWING: Figure 1

Description

TECHNICAL FIELD The present invention relates to an electronic device manufacturing method and an adhesive film.

In the dicing (package DC) of an assembly of electronic component packages, the blade used is thick and the tip of the blade tends to be rounded. It is possible. Therefore, the thickness of the base material corresponding to the depth of cut is required.
On the other hand, in recent years, in order to improve the reliability of electronic components, the final test in a high-temperature environment has been increasingly imposed on the components after singulation. Conventionally, the mainstream method has been to transfer individual chips one by one by a robot to perform a final test.

For the high temperature final test, it is known that an adhesive tape with a heat-resistant base material such as PET can be applied. Since the rigidity is too high, there is a problem that the handleability of the tape is deteriorated, but the handleability can be improved by using the laminated base material of the heat-resistant resin layer and the flexible resin layer. (For example, Patent Document 1)

WO2020/203287

According to the study of the present inventors, the following problems were found in the conventional method of manufacturing an electronic device.

When using a conventional tape, in the final test environment, the package electrode and the test electrode are connected to conduct an electrical evaluation. There was a problem that the package position moved.
In other words, the inventors have found that there is room for improvement in the positional accuracy of the chips when performing high-temperature operation tests on individualized components.

The present invention has been made in view of the above circumstances, and provides a method for manufacturing an electronic device and an adhesive film in which the positional accuracy of chips is good even when an operation test is performed on individualized parts at high temperatures. It provides.

The inventor of the present invention has made intensive studies in order to achieve the above object. As a result, they discovered that the use of a specific adhesive film improves the positional accuracy of the chip even when the individualized parts are subjected to high-temperature operation tests, and completed the present invention. let me

According to the present invention, the following electronic device manufacturing method and adhesive film are provided.

[1]
A step (A) of preparing a structure comprising an adhesive film comprising a substrate layer, an intermediate layer and an adhesive resin layer in this order, and an electronic component attached to the adhesive resin layer;
A step (B) of dicing the electronic component with a dicing blade while being attached to the adhesive film;
A step (C) of evaluating the characteristics of the electronic component attached to the adhesive film in a temperature environment of 60° C. or higher and 200° C. or lower;
A method of manufacturing an electronic device comprising:
A method for producing an electronic device, wherein the pressure-sensitive adhesive film has a compressive strain rate S of 3% or less in an environment at 150° C. measured according to <Method> below.
<Method>
The adhesive film is cut into a size of 10 mm x 10 mm and laminated to an original thickness of 5 mm to obtain a measurement sample.
The obtained measurement sample is compressed at a test speed of 5 mm/min in an environment of 150° C., and when a pressure of 10 kg/cm ² is applied, the difference between the original thickness [mm] and the thickness [mm] during compression. The strain value [mm] is measured, and the compression strain rate S [%] is calculated from the following formula.
Compressive strain rate S [%] = {(strain value [mm]) / (original thickness [mm])} x 100
[2]
A step (A) of preparing a structure comprising an adhesive film comprising a substrate layer, an intermediate layer and an adhesive resin layer in this order, and an electronic component attached to the adhesive resin layer;
A step (B) of dicing the electronic component with a dicing blade while being attached to the adhesive film;
A step (C) of evaluating the characteristics of the electronic component attached to the adhesive film in a temperature environment of 60° C. or higher and 200° C. or lower;
A method of manufacturing an electronic device comprising:
The method for manufacturing an electronic device, wherein the intermediate layer contains a resin and has a gel fraction of 65% or more.
[3]
In the method for manufacturing an electronic device according to [1] or [2] above,
When the thickness of the base material layer is _X1 and the thickness of the intermediate layer is _X2 ,
A method of manufacturing an electronic device that satisfies the relationship of X ₂ >X ₁ .
[4]
In the method for manufacturing an electronic device according to any one of [1] to [3] above,
The thickness (X ₁ ) of the base material layer is 1 μm or more and 100 μm or less,
A method for manufacturing an electronic device, wherein the intermediate layer has a thickness (X ₂ ) of 10 μm or more and 500 μm or less.
[5]
In the method for manufacturing an electronic device according to any one of [1] to [4] above,
A method for manufacturing an electronic device, wherein the dicing blade has a tapered cross-sectional shape at the tip of the outer peripheral portion, and satisfies the relationship of X ₂ >R, where R is the diameter of the tip.
[6]
In the method for manufacturing an electronic device according to any one of [1] to [5] above,
A method for manufacturing an electronic device, wherein the base material layer has a storage elastic modulus E' of 50 MPa or more and 10 GPa or less at 85°C, and the intermediate layer has a storage elastic modulus E' of 1 MPa or more and less than 50 MPa at 85°C.
[7]
In the method for manufacturing an electronic device according to any one of [1] to [6] above,
A method of manufacturing an electronic device, wherein the intermediate layer contains a thermoplastic resin.
[8]
In the method for manufacturing an electronic device according to [7] above,
The method for manufacturing an electronic device, wherein the thermoplastic resin contains one or more resins selected from the group consisting of ethylene/α-olefin copolymers and ethylene/vinyl ester copolymers.
[9]
In the method for manufacturing an electronic device according to [8] above,
A method for producing an electronic device, wherein the ethylene-vinyl ester copolymer comprises an ethylene-vinyl acetate copolymer.
[10]
In the method for manufacturing an electronic device according to any one of [1] to [9] above,
A method for manufacturing an electronic device, further comprising a step (D) of picking up the diced electronic component from the adhesive film after the step (B).
[11]
In the method for manufacturing an electronic device according to any one of [1] to [10] above,
After at least one of the step (A) and the step (B), a step (F) of passing through solder reflow under conditions of a furnace temperature of 160 ° C. or higher and 260 ° C. or lower while being attached to the adhesive film. A method of manufacturing an electronic device, further comprising:
[12]
An adhesive film used in the dicing process of electronic components,
A substrate layer, an intermediate layer and an adhesive resin layer are provided in this order,
An adhesive film having a compressive strain rate S of 3% or less in an environment at 150° C. measured according to <Method> below.
<Method>
The adhesive film is cut into a size of 10 mm x 10 mm and laminated to an original thickness of 5 mm to obtain a measurement sample.
The obtained measurement sample was compressed at a test speed of 5 mm/min in an environment of 150° C., and the strain value [mm] when a pressure of 10 kg/cm ² was applied (=(original thickness [mm])−( The thickness [mm]) during compression is measured, and the compression strain rate S [%] is calculated from the following formula.
Compressive strain rate S [%] = (strain value [mm]) / (original thickness [mm]) x 100
[13]
An adhesive film used in the dicing process of electronic components,
A substrate layer, an intermediate layer and an adhesive resin layer are provided in this order,
The pressure-sensitive adhesive film, wherein the intermediate layer contains a resin and has a gel fraction of 65% or more.
[14]
In the adhesive film according to [12] or [13] above,
An adhesive film satisfying the relationship of X ₂ >X ₁ where X ₁ is the thickness of the base layer and X ₂ is the thickness of the intermediate layer.
[15]
In the adhesive film according to any one of [12] to [14] above,
The thickness (X ₁ ) of the base material layer is 1 μm or more and 100 μm or less,
The pressure-sensitive adhesive film, wherein the intermediate layer has a thickness (X ₂ ) of 10 μm or more and 500 μm or less.
[16]
In the adhesive film according to any one of [12] to [15] above,
The adhesive film, wherein the base layer has a storage elastic modulus E' of 50 MPa or more and 10 GPa or less at 85°C, and the intermediate layer has a storage elastic modulus E' of 1 MPa or more and less than 50 MPa at 85°C.
[17]
In the adhesive film according to any one of [12] to [16] above,
An adhesive film, wherein the intermediate layer comprises a thermoplastic resin.
[18]
In the adhesive film according to [17] above,
The adhesive film, wherein the thermoplastic resin contains one or more selected from the group consisting of ethylene/α-olefin copolymers and ethylene/vinyl ester copolymers.
[19]
In the adhesive film according to [18] above,
The adhesive film, wherein the ethylene-vinyl ester copolymer comprises an ethylene-vinyl acetate copolymer.

According to the present invention, it is possible to provide an electronic device manufacturing method and an adhesive film in which chip position accuracy is good even when an operation test is performed on individualized components at a high temperature.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which showed typically an example of the structure of the adhesive film of embodiment which concerns on this invention. It is a sectional view showing typically an example of a manufacturing method of an electronic device of an embodiment concerning the present invention. It is a sectional view showing typically an example of a manufacturing method of an electronic device of an embodiment concerning the present invention. FIG. 4 is a cross-sectional view schematically showing an example of a state in which an electronic component is cut using a dicing blade; FIG. 4 is a cross-sectional view schematically showing an example of a tip diameter R of a dicing blade;

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in all the drawings, the same constituent elements are denoted by the same reference numerals, and the explanation thereof is omitted as appropriate. Also, the drawings are schematic diagrams and do not correspond to actual dimensional ratios. In addition, the numerical range "A to B" represents from A to B, unless otherwise specified. Moreover, in this embodiment, "(meth)acryl" means acryl, methacryl, or both acryl and methacryl.

1. Adhesive Film Hereinafter, the adhesive film 50 according to the present embodiment will be described.
FIG. 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film 50 according to an embodiment of the invention.

As a first embodiment of the adhesive film 50 according to the present embodiment, as shown in FIG. Compression in an environment of 150 ° C. measured according to <method> below for the adhesive film 50, which is provided with the base layer 10, the intermediate layer 20 and the adhesive resin layer 30 in this order. A strain rate S is 3% or less.

<Method>
The adhesive film is cut into a size of 10 mm x 10 mm and laminated to an original thickness of 5 mm to obtain a measurement sample.
The obtained measurement sample was compressed at a test speed of 5 mm/min in an environment of 150° C., and the strain value [mm] when a pressure of 10 kg/cm ² was applied (=(original thickness [mm])−( The thickness [mm]) during compression is measured, and the compression strain rate S [%] is calculated from the following formula.
Compressive strain rate S [%] = (strain value [mm]) / (original thickness [mm]) x 100

The inventor of the present invention has extensively studied in order to realize an adhesive film with good chip positional accuracy even when an operation test is performed on individualized parts at a high temperature. As a result, the intermediate layer 20 is provided between the base material layer 10 and the adhesive resin layer 30, and the compressive strain rate S of the adhesive film 50 at 150° C. is 3% or less. It has been found for the first time that it is possible to secure the rigidity of the film 50 and improve the positional accuracy of the chip.
Therefore, according to the adhesive film 50 according to the present embodiment, while being excellent in handleability, it is possible to improve the positional accuracy of the chip even when performing an operation test on the individualized parts at a high temperature. becomes possible.

In the adhesive film 50 of the present embodiment, the upper limit of the compressive strain rate S at 150° C. is 3% or less, preferably 2% or less, and more preferably 1% or less. By setting the compression strain rate S to the above upper limit value or less, it is possible to secure the rigidity of the adhesive film 50 in a high-temperature environment and improve the positional accuracy of the chip.
Also, the lower limit of the compression strain rate S at 150° C. is not particularly limited, but is, for example, 0% or more.

The compressive strain rate S at 150° C. of the adhesive film 50 in this embodiment can be adjusted, for example, by performing cross-linking with an electron beam as described later.

As a second embodiment of the adhesive film 50 according to the present embodiment, as shown in FIG. A pressure-sensitive adhesive film used for a film comprising a substrate layer 10, an intermediate layer 20 and an adhesive resin layer 30 in this order, the intermediate layer 20 containing a resin, and the intermediate layer 20 having a gel fraction of 65% or more. be.

The inventor of the present invention has extensively studied in order to realize an adhesive film with good chip positional accuracy even when an operation test is performed on individualized parts at a high temperature. As a result, by providing the intermediate layer 20 between the base material layer 10 and the adhesive resin layer 30 and setting the gel fraction of the intermediate layer 20 to 65% or more, the stiffness of the adhesive film 50 in a high-temperature environment can be improved. It was found for the first time that it is possible to secure the positional accuracy of the chip and improve the positional accuracy of the chip.
Although the reason for this is not clear, a large gel fraction indicates that cross-linking is progressing. It is considered that the rigidity can be secured even in

In the adhesive film 50 of the present embodiment, the lower limit of the gel fraction of the intermediate layer 20 is 60% or higher, preferably 70% or higher, more preferably 80% or higher, and still more preferably 90% or higher. By making the gel fraction equal to or higher than the above lower limit, it is possible to secure the rigidity of the adhesive film 50 in a high-temperature environment and improve the positional accuracy of the chip.
Although the upper limit of the gel fraction of the intermediate layer 20 is not particularly limited, it is, for example, 100% or less.

As the gel fraction of the intermediate layer 20 in the present embodiment, the gel fraction of the intermediate layer resin used for the intermediate layer 20 can be used, and the gel fraction of the intermediate layer resin can be measured, for example, by the following method.
The intermediate layer resin is dissolved in a certain amount of chloroform with stirring. After the dissolution, the undissolved intermediate layer resin is recovered from the chloroform, and the weight of the undissolved resin is measured. After that, the gel fraction is calculated from the undissolved weight and the weight before dissolution.

The gel fraction of the intermediate layer 20 of the adhesive film 50 in this embodiment can be adjusted, for example, by cross-linking with an electron beam as described later.

In the adhesive film 50 of the present embodiment, when the thickness of the base layer 10 is _X1 and the thickness of the intermediate layer 20 is _X2 , it is preferable to satisfy the relationship _X2 > _X1 . By satisfying the above relationship, pick-up properties of diced electronic components can be made favorable while having favorable straight side surfaces.

The thickness of the entire adhesive film 50 according to the present embodiment is preferably 25 μm or more and 500 μm or less, more preferably 30 μm or more and 400 μm or less, and still more preferably 30 μm or more and 300 μm, from the balance of mechanical properties and handling properties. It is below.

The adhesive film 50 according to the present embodiment can be used for temporarily fixing the electronic parts when the electronic parts are diced in the manufacturing process of the electronic device. That is, the adhesive film 50 according to this embodiment can be suitably used as a dicing tape in the dicing process of electronic components.

The total light transmittance of the adhesive film 50 according to this embodiment is preferably 80% or higher, more preferably 85% or higher. By doing so, transparency can be imparted to the adhesive film 50 . By making the total light transmittance of the adhesive film 50 equal to or higher than the above lower limit, the adhesive resin layer 30 can be more effectively irradiated with radiation, and the radiation irradiation efficiency can be improved. The total light transmittance of the adhesive film 50 can be measured according to JIS K7361-1 (1997).

Next, each layer constituting the adhesive film 50 according to this embodiment will be described.

<Base material layer>
The base material layer 10 is a layer provided for the purpose of improving properties such as handleability, mechanical properties, and heat resistance of the adhesive film 50 . Here, in the present embodiment, heat resistance means dimensional stability of the film or resin layer at high or low temperature. That is, it means that a film or a resin layer having excellent heat resistance is less likely to undergo expansion, contraction, deformation such as softening, or melting at high or low temperatures.

The base material layer 10 is not particularly limited as long as it has mechanical strength enough to withstand the external force applied when dicing the electronic component, and for example, a resin film can be used.
Further, the base layer 10 preferably has heat resistance to such an extent that it does not deform or melt to the extent that the positional displacement of the electronic component 70 occurs when the characteristics of the electronic component 70 are evaluated at a high temperature or a low temperature.
As the resin constituting the resin film, polyesters such as polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polybutylene naphthalate; Polyamide such as Pamide;Polyimide;Polyetherimide;Polyamideimide;Polycarbonate;Modified polyphenylene ether;Polyacetal;Polyarylate;Polysulfone;Polyethersulfone; polybenzimidazole; polybenzoxazole; polymethylpentene and the like.

Among these, one or more selected from polyimide, polyamide, and polyester are preferable from the viewpoint of excellent balance of heat resistance, mechanical strength, transparency, price, etc., and selected from polyethylene terephthalate and polyethylene naphthalate. is more preferred, and polyethylene naphthalate is even more preferred.

The melting point of the base material layer 10 is preferably 200° C. or higher, more preferably 220° C. or higher. Alternatively, the base material layer 10 preferably does not exhibit a melting point, more preferably has a decomposition temperature of 200° C. or higher, and further preferably has a decomposition temperature of 220° C. or higher.
The use of such a base layer 10 can further suppress deformation of the adhesive film 50 when evaluating the characteristics of the electronic component 70 at high or low temperatures.

The substrate layer 10 may be a single layer or two or more layers.
The form of the resin film used to form the base material layer 10 may be a stretched film or a uniaxially or biaxially stretched film.

In the adhesive film 50 according to the present embodiment, from the viewpoint of further improving the properties such as handleability, mechanical properties, and heat resistance of the adhesive film 50, the storage elastic modulus E' of the base layer 10 at 85 ° C. is preferably 50 MPa or more, more preferably 100 MPa or more, still more preferably 200 MPa or more, and preferably 10 GPa or less, more preferably 5 GPa or less.
The storage elastic modulus E′ of the substrate layer 10 at 85° C. can be controlled within the above range, for example, by controlling the types and blending ratios of the components constituting the substrate layer 10 .

The thickness (X ₁ ) of the base material layer 10 is preferably 1 µm or more, more preferably 2 µm or more, from the viewpoint of further improving the handling properties, mechanical properties, heat resistance, and other properties of the adhesive film 50. more preferably 3 μm or more, even more preferably 5 μm or more, and particularly preferably 10 m or more.
In addition, the thickness (X ₁ ) of the base material layer 10 is preferably 100 μm or less, more preferably 75 μm or less, more preferably 50 μm or less, from the viewpoint of facilitating handling when attaching the adhesive film. It is more preferably 40 μm or less, and particularly preferably 30 μm or less.
The substrate layer 10 may be subjected to surface treatment in order to improve adhesion with other layers. Specifically, corona treatment, plasma treatment, undercoat treatment, primer coat treatment, or the like may be performed.

<Middle layer>
The intermediate layer 20 adjusts the thickness of the adhesive film 50 to a range in which the tip of the dicing blade can be cut while maintaining good flexibility of the adhesive resin layer 30 side of the adhesive film 50. It is a layer provided in
That is, by providing the intermediate layer 20, it is possible to obtain both an electronic component having good straight side surfaces and pick-up properties of the diced electronic component.

The resin constituting the intermediate layer 20 is not particularly limited as long as it can maintain good flexibility of the adhesive film 50 on the adhesive resin layer 30 side even if the thickness of the intermediate layer 20 is increased. Thermoplastic resins are preferred.
The thermoplastic resin according to the present embodiment is not particularly limited as long as it is a resin capable of forming the intermediate layer 20. For example, an ethylene/α-olefin copolymer containing ethylene and an α-olefin having 3 to 20 carbon atoms, High-density ethylene-based resin, low-density ethylene-based resin, medium-density ethylene-based resin, ultra-low-density ethylene-based resin, linear low-density polyethylene (LLDPE)-based resin, propylene (co)polymer, 1-butene (co) Polymer, 4-methylpentene-1 (co)polymer, ethylene/cyclic olefin copolymer, ethylene/α-olefin/cyclic olefin copolymer, ethylene/α-olefin/non-conjugated polyene copolymer, ethylene/ Olefin resins such as α-olefin/conjugated polyene copolymer, ethylene/aromatic vinyl copolymer, ethylene/α-olefin/aromatic vinyl copolymer; ethylene/ethyl (meth)acrylate copolymer, ethylene・(meth)methyl acrylate copolymer, ethylene/propyl (meth)acrylate copolymer, ethylene/butyl (meth)acrylate copolymer, ethylene/hexyl (meth)acrylate copolymer, ethylene/( Ethylene/(meth)acrylate esters such as meth)acrylate-2-hydroxyethyl copolymer, ethylene/(meth)acrylate-2-hydroxypropyl copolymer, and ethylene/glycidyl (meth)acrylate copolymer Copolymer; ethylene-vinyl ester copolymer such as ethylene-vinyl acetate copolymer, ethylene-vinyl propionate copolymer, ethylene-vinyl butyrate copolymer, ethylene-vinyl stearate copolymer; polyvinyl chloride Polyvinylidene chloride; polyolefin thermoplastic elastomer; polystyrene thermoplastic elastomer; polyurethane thermoplastic elastomer; 1,2-polybutadiene thermoplastic elastomer; transpolyisoprene thermoplastic elastomer; chlorinated polyethylene thermoplastic elastomer; polyester One or two or more selected from system elastomers and the like can be used.

Among these, at least one selected from ethylene/α-olefin copolymers and ethylene/vinyl ester copolymers is preferable, and at least one selected from ethylene/α-olefin copolymers and ethylene/vinyl acetate copolymers is preferred. One is more preferred, and an ethylene/vinyl acetate copolymer is even more preferred. In addition, in this embodiment, the resins described above may be used alone, or may be used as a blend.
The content of vinyl acetate units in the ethylene/vinyl acetate copolymer is preferably 10% by mass or more and 35% by mass or less, more preferably 12% by mass or more and 30% by mass or less, and still more preferably 15% by mass or more and 25% by mass. % or less. When the vinyl acetate unit content is within this range, the balance between crosslinkability, flexibility, weather resistance and transparency is even more excellent.
The vinyl acetate content can be measured according to JIS K6730.

The α-olefin of the ethylene/α-olefin copolymer composed of ethylene and an α-olefin having 3 to 20 carbon atoms, which is used as the thermoplastic resin in the present embodiment, is usually an α-olefin having 3 to 20 carbon atoms. can be used singly or in combination of two or more. Among them, α-olefins having 10 or less carbon atoms are preferred, and α-olefins having 3 to 8 carbon atoms are particularly preferred. Examples of such α-olefins include propylene, 1-butene, 1-pentene, 1-hexene, 3-methyl-1-butene, 3,3-dimethyl-1-butene, 4-methyl-1-pentene, , 1-octene, 1-decene, 1-dodecene and the like. Among these, propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene and 1-octene are preferred because of their easy availability. The ethylene/α-olefin copolymer may be a random copolymer or a block copolymer, but a random copolymer is preferred from the viewpoint of flexibility.

The thickness (X ₂ ) of the intermediate layer 20 is not particularly limited as long as the thickness of the adhesive film 50 can be adjusted to a range in which the tip of the dicing blade can be sufficiently cut. For example, 10 μm. 20 μm or more, more preferably 30 μm or more, even more preferably 50 μm or more, and particularly preferably 60 μm or more.
In addition, the thickness (X ₂ ) of the intermediate layer 20 is preferably 500 μm or less, more preferably 400 μm or less, from the viewpoint of further improving the flexibility of the adhesive film 50 on the adhesive resin layer 30 side. is more preferably 300 μm or less, even more preferably 200 μm or less, even more preferably 150 μm or less, and particularly preferably 130 μm or less.

Here, a known dicing blade can be used as the dicing blade. The dicing blade is, for example, a disk-shaped blade having a blade at the tip of the outer periphery of the disk, and slicing the object by contacting the object while rotating.
In the present embodiment, the cross-sectional shape of the tip of the outer peripheral portion of the dicing blade is tapered, and the relationship of X ₂ >R is preferably satisfied, where R is the tip diameter of the dicing blade. By doing so, the tip of the dicing blade can be sufficiently cut into the adhesive film 50, and as a result, the side surface of the electronic component after dicing can be further straightened. In this embodiment, the tip diameter R of the dicing blade refers to the distance from the portion Y1 where the side surface of the dicing blade is not straight to the tip Y2 of the dicing blade, as shown in FIG.

In the adhesive film 50 according to the present embodiment, from the viewpoint of further improving properties such as handleability, mechanical properties, and heat resistance of the adhesive film 50, the storage elastic modulus E' of the intermediate layer 20 at 85°C is It is preferably 1 MPa or more, more preferably 10 MPa or more, and preferably less than 50 MPa from the viewpoint of further improving the flexibility of the adhesive film 50 on the adhesive resin layer 30 side.
The storage elastic modulus E′ of the intermediate layer 20 at 85° C. can be controlled within the above range by, for example, controlling the types and blending ratios of the respective components constituting the intermediate layer 20 .

From the viewpoint of improving the heat resistance of the adhesive film 50, the intermediate layer 20 may be crosslinkable, and preferably contains a crosslinked product of the above thermoplastic resin.
The method for cross-linking the intermediate layer 20 is not particularly limited as long as it is a method capable of cross-linking the resin constituting the intermediate layer 20. Cross-linking using a radical polymerization initiator; cross-linking using sulfur or a sulfur-based compound; cross-linking methods such as cross-linking by radiation. Among these, cross-linking by electron beam is preferable.

At this time, the gel fraction of the resin forming the intermediate layer 20 can be adjusted by cross-linking with an electron beam. When the resin constituting the intermediate layer 20 of the adhesive film 50 according to the present embodiment is crosslinked by electron beams, the irradiation conditions of the electron beams are, for example, an acceleration voltage of 50 to 300 kV and an irradiation dose of 100 to 400 kGy. Thus, the gel fraction of the resin forming the intermediate layer 20 of the adhesive film 50 according to this embodiment can be set within a predetermined range.

Crosslinking by a radical polymerization initiator can use the radical polymerization initiator used for crosslinking the resin forming the intermediate layer 20 . As the radical polymerization initiator, known thermal radical polymerization initiators, photoradical polymerization initiators, and these can be used in combination.
When the intermediate layer 20 is crosslinked using sulfur or a sulfur-based compound, the intermediate layer 20 may be crosslinked by blending a vulcanization accelerator, a vulcanization accelerator aid, or the like.
Further, in any of the crosslinking methods, the intermediate layer 20 may be crosslinked by blending a crosslinking aid with the intermediate layer 20 .

<Adhesive resin layer>
The adhesive resin layer 30 is a layer that contacts and adheres to the surface of the electronic component 70 when the adhesive film 50 is attached to the electronic component 70 .

Examples of adhesives constituting the adhesive resin layer 30 include (meth)acrylic adhesives, silicone adhesives, urethane adhesives, olefin adhesives, and styrene adhesives. Among these, a (meth)acrylic pressure-sensitive adhesive having a (meth)acrylic polymer as a base polymer is preferable because the adhesive force can be easily adjusted.

As the adhesive constituting the adhesive resin layer 30, it is possible to use a radiation-crosslinking adhesive whose adhesive strength is reduced by radiation. The adhesive resin layer 30 made of a radiation-crosslinkable adhesive is crosslinked by irradiation of radiation, and the adhesive strength is significantly reduced. becomes easier. Radiation includes ultraviolet rays, electron beams, infrared rays, and the like.
As the radiation-crosslinkable pressure-sensitive adhesive, an ultraviolet-light-crosslinkable pressure-sensitive adhesive is preferable.

Examples of (meth)acrylic polymers contained in (meth)acrylic pressure-sensitive adhesives include homopolymers of (meth)acrylic acid ester compounds, copolymers of (meth)acrylic acid ester compounds and comonomers, and the like. mentioned. (Meth)acrylic acid ester compounds include, for example, methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, hydroxyethyl (meth)acrylate, hydroxypropyl (meth) Acrylate, dimethylaminoethyl (meth)acrylate, glycidyl (meth)acrylate and the like. These (meth)acrylic acid ester compounds may be used singly or in combination of two or more.
Examples of comonomers constituting the (meth)acrylic copolymer include vinyl acetate, (meth)acrylonitrile, (meth)acrylamide, styrene, (meth)acrylic acid, itaconic acid, and (meth)acrylamide. , methylol (meth)acrylamide, maleic anhydride, and the like. These comonomers may be used singly or in combination of two or more.

The radiation-crosslinkable pressure-sensitive adhesive includes, for example, a pressure-sensitive adhesive such as the (meth)acrylic pressure-sensitive adhesive, a crosslinkable compound (a component having a carbon-carbon double bond), a photopolymerization initiator or a thermal polymerization initiator, including.

The crosslinkable compound includes, for example, a monomer, oligomer or polymer having a carbon-carbon double bond in the molecule and capable of being crosslinked by radical polymerization. Examples of such crosslinkable compounds include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neo Esters of (meth)acrylic acid and polyhydric alcohols such as pentyl glycol di(meth)acrylate and dipentaerythritol hexa(meth)acrylate; ester (meth)acrylate oligomers; 2-propenyl di-3-butenyl cyanurate, 2 -isocyanurates or isocyanurate compounds such as hydroxyethylbis(2-(meth)acryloxyethyl)isocyanurate and tris(2-methacryloxyethyl)isocyanurate.
When the adhesive is a radiation-crosslinkable polymer having a carbon-carbon double bond in the side chain of the polymer, the crosslinkable compound may not be added.

The content of the crosslinkable compound is preferably 5 to 100 parts by mass, more preferably 10 to 50 parts by mass, per 100 parts by mass of the adhesive. When the content of the crosslinkable compound is within the above range, it becomes easier to adjust the adhesive force than when it is less than the above range, and the sensitivity to heat and light is too high compared to when it is more than the above range. It is difficult for deterioration of storage stability due to this to occur.

The photopolymerization initiator may be any compound that is cleaved to generate radicals upon exposure to radiation. Examples include benzoin alkyl ethers such as benzoin methyl ether, benzoin isopropyl ether, and benzoin isobutyl ether; , α-hydroxycyclohexylphenyl ketone; aromatic ketals such as benzyl dimethyl ketal; polyvinyl benzophenone;

Examples of thermal polymerization initiators include organic peroxide derivatives and azo polymerization initiators. Organic peroxide derivatives are preferred because they do not generate nitrogen when heated. Thermal polymerization initiators include, for example, ketone peroxides, peroxyketals, hydroperoxides, dialkyl peroxides, diacyl peroxides, peroxyesters and peroxydicarbonates.

A cross-linking agent may be added to the adhesive. Examples of cross-linking agents include epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythrol polyglycidyl ether, and diglycerol polyglycidyl ether; tetramethylolmethane-tri-β-aziridinyl propionate; , trimethylolpropane-tri-β-aziridinylpropionate, N,N′-diphenylmethane-4,4′-bis(1-aziridinecarboxamide), N,N′-hexamethylene-1,6-bis aziridine compounds such as (1-aziridinecarboxamide); and isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate and polyisocyanate. From the viewpoint of improving the balance between the heat resistance and adhesion of the adhesive resin layer 30, the content of the cross-linking agent is 0.1 parts by mass or more and 10 parts by mass with respect to 100 parts by mass of the (meth)acrylic adhesive resin. The following are preferable.

Although the thickness of the adhesive resin layer 30 is not particularly limited, it is preferably 1 μm or more and 100 μm or less, more preferably 3 μm or more and 50 μm or less, and even more preferably 5 μm or more and 40 μm or less.

The adhesive resin layer 30 can be formed, for example, by applying an adhesive coating liquid onto the intermediate layer 20 .
As a method for applying the adhesive coating liquid, conventionally known coating methods such as roll coater method, reverse roll coater method, gravure roll method, bar coater method, comma coater method and die coater method can be employed. Although there are no particular restrictions on the drying conditions for the applied pressure-sensitive adhesive, it is generally preferred to dry in the temperature range of 80 to 200° C. for 10 seconds to 10 minutes. More preferably, it is dried at 80 to 170°C for 15 seconds to 5 minutes. In order to sufficiently accelerate the cross-linking reaction between the cross-linking agent and the pressure-sensitive adhesive, the pressure-sensitive adhesive coating liquid may be heated at 40 to 80° C. for about 5 to 300 hours after drying.

<Other layers>
The adhesive film 50 according to the present embodiment may further have a release film laminated on the adhesive resin layer 30 . Examples of the release film include a polyester film subjected to a release treatment.

As a specific configuration of the adhesive film 50 according to the present embodiment, for example, biaxially stretched polyethylene naphthalate film 25 μm/ethylene-vinyl acetate copolymer film (vinyl acetate unit content 19% by mass) 120 μm/ultraviolet rays Adhesive film having a layer structure of 30 μm crosslinked adhesive resin layer, biaxially oriented polyethylene terephthalate film 50 μm/ethylene-vinyl acetate copolymer film (vinyl acetate unit content 19% by mass) 70 μm/ultraviolet crosslinked adhesive An adhesive film having a layer structure of a 30 μm elastic resin layer, and the like.

<Method for producing adhesive film>
Next, an example of a method for manufacturing the adhesive film 50 according to this embodiment will be described.
For the adhesive film 50 according to the present embodiment, for example, the intermediate layer 20 is formed on one surface of the base material layer 10 by an extrusion lamination method, and the adhesive coating liquid is applied on the intermediate layer 20 that has been crosslinked by electron beams. It can be obtained by forming the adhesive resin layer 30 by drying after coating.
The base layer 10 and the intermediate layer 20 may be formed by co-extrusion molding, or may be formed by laminating the film-like base layer 10 and the film-like intermediate layer 20. .

At this time, the compressive strain rate S of the adhesive film 50 at 150° C. can be adjusted by cross-linking the intermediate layer 20 with an electron beam. When the resin constituting the intermediate layer 20 of the adhesive film 50 according to the present embodiment is crosslinked by electron beams, the irradiation conditions of the electron beams are, for example, an acceleration voltage of 50 to 300 kV and an irradiation dose of 100 to 400 kGy. Thus, the compression strain rate S at 150° C. of the adhesive film 50 according to the present embodiment can be kept within a predetermined range.

The gel fraction of the resin forming the intermediate layer 20 can also be adjusted by cross-linking with electron beams. When the resin constituting the intermediate layer 20 of the adhesive film 50 according to the present embodiment is crosslinked by electron beams, the irradiation conditions of the electron beams are, for example, an acceleration voltage of 50 to 300 kV and an irradiation dose of 100 to 400 kGy. Thus, the gel fraction of the resin forming the intermediate layer 20 of the adhesive film 50 according to this embodiment can be set within a predetermined range.

2. Method for Manufacturing Electronic Device Next, a method for manufacturing an electronic device according to the present embodiment will be described.
2 and 3 are cross-sectional views schematically showing an example of a method for manufacturing an electronic device according to an embodiment of the invention.
The method for manufacturing an electronic device according to this embodiment includes at least the following three steps, and preferably includes at least the following three steps in this order.
(A) A structure 100 comprising an adhesive film 50 comprising a substrate layer 10, an intermediate layer 20 and an adhesive resin layer 30 in this order, and an electronic component 70 attached to the adhesive resin layer 30 Step of preparation (B) Step of dicing the electronic component 70 with a dicing blade while being attached to the adhesive film 50 (C) Attaching to the adhesive film 50 in a temperature environment of 60° C. or more and 200° C. or less Then, in the method of manufacturing an electronic device according to the present embodiment, the base layer 10, the intermediate layer 20, and the adhesive resin layer 30 described above are used as the adhesive film 50. are provided in this order, and an adhesive film having a compressive strain rate S at 150° C. of 3% or less or an adhesive film having a gel fraction of the intermediate layer 20 of 65% or more is used.

Each step of the method for manufacturing an electronic device according to this embodiment will be described below.

(Step (A))
First, a structure 100 including an adhesive film 50 having a substrate layer 10, an intermediate layer 20 and an adhesive resin layer 30 in this order, and an electronic component 70 attached to the adhesive resin layer 30 is prepared. do.

Such a structure can be obtained, for example, by attaching the electronic component 70 onto the adhesive resin layer 30 of the adhesive film 50 .
Examples of the electronic component 70 attached to the adhesive film 50 include semiconductor substrates (eg, wafers) such as silicon, germanium, gallium-arsenide, gallium-phosphorus, gallium-arsenide-aluminum; mold array package substrates, fan-out packages. Package substrates in which a plurality of semiconductor chips are collectively sealed with a sealing resin, such as substrates and wafer level package substrates.
Further, as the semiconductor substrate, it is preferable to use a semiconductor substrate having a circuit formed on its surface.

The sticking of the adhesive film 50 may be carried out manually, but is usually carried out by an automatic sticking machine equipped with a roll-shaped surface protective film.
The temperature of the adhesive film 50 and the electronic component 70 during attachment is not particularly limited, but is preferably 25°C to 80°C.
Also, the pressure between the adhesive film 50 and the electronic component 70 during attachment is not particularly limited, but is preferably 0.3 MPa to 0.5 MPa.

(Step (B))
Next, the electronic components 70 are diced with a dicing blade while being attached to the adhesive film 50 to obtain a plurality of electronic components 70 .
“Dicing” as used herein refers to an operation of dividing the electronic component 70 to obtain a plurality of divided electronic components 70 .
The dicing can be performed using, for example, a dicing blade having a tapered cross-sectional shape at the tip of the outer peripheral portion.

Note that the electronic component 70 in step (B) includes a plurality of divided electronic components 70 obtained by dicing.

(Step (C))
Thereafter, in a temperature environment of 60° C. or more and 200° C. or less, after heating the surface temperature of the electronic component 70 to the same temperature as the temperature environment, the characteristics of the electronic component 70 attached to the adhesive film 50 are evaluated. I do.
The characteristic evaluation of the electronic component 70 is, for example, an operation confirmation test of the electronic component 70, and can be performed using a probe card 92 having probe terminals 95, as shown in FIG. 3(c).
For example, a probe terminal 95 connected to a tester via a probe card 92 is brought into contact with the terminal 75 of the electronic component 70 . Accordingly, operating power, operation test signals, and the like can be exchanged between the electronic component 70 and the tester to determine whether the operating characteristics of the electronic component 70 are good or bad.

The temperature environment in step (C) is 60° C. or higher and 200° C. or lower, but the lower limit is preferably 80° C. or higher, more preferably 85° C. or higher, and the upper limit is preferably 180° C. or lower, more preferably 160° C. or lower. is. By doing so, it is possible to accelerate the deterioration of the electronic component 70 in which the cause of the occurrence of the defect is present, to cause the initial defect of the electronic component 70 to occur early, and to remove the defective product. As a result, the electronic component 70 with excellent reliability can be obtained with a high yield.
For example, the structure 100 can be placed in a constant temperature bath or an oven, or heated by a heater provided on the sample stage 90 to create the above temperature environment.

(Step (D))
In the method for manufacturing an electronic device according to this embodiment, a step (D) of picking up the diced electronic components 70 from the adhesive film 50 may be further performed after the step (B) or the step (C).
By this pickup, the electronic component 70 can be peeled off from the adhesive film 50 . Picking up the electronic component 70 can be performed by a known method.

(Step (E))
In the method for manufacturing an electronic device according to the present embodiment, the adhesive film 50 is irradiated with radiation before the step (D) to crosslink the adhesive resin layer 30, thereby forming an adhesive resin layer on the electronic component 70. A step (E) of reducing the adhesive strength of 30 may be further performed.
By performing the step (E), the electronic component 70 can be easily picked up from the adhesive resin layer 30 . In addition, it is possible to prevent the surface of the electronic component 70 from being contaminated by the adhesive component forming the adhesive resin layer 30 .
The radiation is applied, for example, from the surface of the adhesive film 50 opposite to the surface on the adhesive resin layer 30 side.

When ultraviolet rays are used as radiation, the dose of ultraviolet rays irradiated to the adhesive film 50 is preferably 100 mJ/cm ² or more, more preferably 350 mJ/cm ² or more.
When the dose of ultraviolet rays is equal to or higher than the above lower limit, the adhesive strength of the adhesive resin layer 30 can be sufficiently reduced, and as a result, the occurrence of adhesive residue on the surface of the electronic component 70 can be further suppressed. .
The upper limit of the dose of ultraviolet rays irradiated to the adhesive film 50 is not particularly limited, but from the viewpoint of productivity, it is, for example, 1500 mJ/cm ² or less, preferably 1200 mJ/cm ² or less.
Ultraviolet irradiation can be performed using, for example, a high-pressure mercury lamp or an LED.

(Step (F))
In the method for manufacturing an electronic device according to the present embodiment, after at least one of the step (A) and the step (B), the temperature in the furnace is 160 ° C. or higher and 260 ° C. or lower while being attached to the adhesive film. It is preferable to perform the step (F) of melting the solder material, shaping it, and adhering it to the surface by passing it through solder reflow under certain conditions.
By performing the step (F), the shaping and adhesion of the terminals 75 of the electronic component 70 are improved, and the deformation, breakage, and dropout of the terminals 75 that occur when the probe terminals 95 contact the terminals 75 in the step (C). can be suppressed.
In this case, the step (E) may be performed before the step (F), or the step (E) may be performed after the step (F).

As described above, step (F) is preferably performed after at least one of step (A) and step (B). That is, in the method for manufacturing an electronic component according to the present embodiment, the step (F) may be performed in the state of the structure 100 before dicing, or the structure 100 may be diced and attached to the adhesive film 50. The step (F) may be performed with the electronic component 70 in the diced state, or the step (F) may be performed both before and after the dicing of the structure 100 .
Step (F) may be carried out after step (C) in addition to being carried out after at least one of step (A) and step (B). By doing so, it is possible to further suppress deformation, breakage, and falling off of the terminals 75 in the subsequent manufacturing process of the electronic device, and it is possible to efficiently obtain the electronic component 70 with excellent reliability.

In step (F), the electronic device can be subjected to solder reflow at a furnace temperature of preferably 160° C. or higher and 260° C. or lower, more preferably 165° C. or higher and 255° C. or lower, further preferably 170° C. or higher and 250° C. or lower. .
By setting the furnace temperature within the above range, the solder material can be efficiently melted, molded, and adhered to the surface of the electronic device, and the electronic component 70 with excellent reliability can be efficiently obtained. .
The solder reflow treatment method is not particularly limited, but can be performed using a known reflow furnace, for example.

(Other processes)
The method for manufacturing an electronic device according to this embodiment may have other processes than those described above. As other steps, known steps in the method of manufacturing an electronic device can be used.

For example, after performing the step (D), any step generally performed in the manufacturing process of electronic devices such as a step of mounting the obtained electronic component 70 on a circuit board, a wire bonding step, a sealing step, etc. Further steps may be performed.

Although the embodiments of the present invention have been described above, these are examples of the present invention, and various configurations other than those described above can also be adopted.

It should be noted that the present invention is not limited to the above-described embodiments, and includes modifications, improvements, etc. within the scope of achieving the object of the present invention.

EXAMPLES The present invention will be specifically described below with reference to Examples, but the present invention is not limited thereto.

The details of the materials used to make the adhesive film are as follows.

<Resin for intermediate layer>
An ethylene-vinyl acetate copolymer (EVA, Dow Mitsui Chemicals, Inc., product name: EV450, vinyl acetate content: 19% by mass) was used.
EVA1 to EVA3 were prepared by irradiating EVA with an electron beam under the following conditions in a nitrogen atmosphere to crosslink it. The gel fraction was adjusted by electron beam irradiation conditions.
· EVA1 conditions: acceleration voltage 145 kV, gel fraction 82% for irradiation dose 200 kGy
· EVA2 conditions: acceleration voltage 135 kV, gel fraction 71% for irradiation dose 220 kGy
· EVA3 conditions: acceleration voltage 105 kV, gel fraction 63% for irradiation dose 200 kGy
・When electron beam cross-linking was not performed, the gel fraction was 0%.

The gel fraction of each intermediate layer resin was measured by the following method.
40 g of each intermediate layer resin was dissolved in 10 mL of chloroform while stirring at 50° C. for 60 minutes. After the dissolution, the undissolved intermediate layer resin was recovered from the chloroform, and the weight of the undissolved resin was measured. After that, the gel fraction was calculated from the following formula from the undissolved weight and the weight before dissolution.
Gel fraction [%] = (undissolved weight [g]) / (weight before dissolution [g]) x 100

<Adhesive A>
30 parts by weight of butyl acrylate, 5 parts by weight of acrylic acid and 70 parts by weight of methyl acrylate were copolymerized and reacted in ethyl acetate to obtain an acrylic acid ester copolymer solution.
To this solution, 7 parts by weight of a photoinitiator (Omnilad 651: IGM Resins B.V.) per 100 parts by weight of the copolymer (solid content), an isocyanate-based cross-linking agent (manufactured by Mitsui Chemicals, Inc., trade name: Orester P49-75S) 0.3 parts by weight, pentaerythritol tetraacrylate (manufactured by Shin-Nakamura Chemical, trade name: NK Ester A) as a low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in one molecule -TMM-3) 50 parts by weight was added to obtain a UV curable adhesive A.

<Adhesive B>
50 parts by weight of ethyl acrylate, 30 parts by weight of 2-ethylhexyl acrylate and 20 parts by weight of methyl acrylate were copolymerized in ethyl acetate and reacted. After completion of the reaction, the solution was cooled, 25 parts by weight of xylene, 2.5 parts by weight of acrylic acid, and 1.5 parts by weight of tetradecylbenzylammonium chloride were added to the solution, and reacted at 80° C. for 10 hours while blowing air. , an acrylic acid ester copolymer solution into which a photopolymerizable carbon-carbon double bond was introduced was obtained.
To this solution, 7 parts by weight of benzoin as a photoinitiator and 2 parts by weight of an isocyanate cross-linking agent (manufactured by Mitsui Chemicals, Inc., trade name: Orester P49-75S) are added to 100 parts by weight of the copolymer (solid content). , Dipentaerythritol hexaacrylate (manufactured by Toagosei Co., Ltd., trade name: Aronix M-400) as a low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in one molecule. , to obtain a UV curable adhesive B.

[Example 1]
EVA was extruded to a thickness of 120 μm as an intermediate layer on a polyethylene naphthalate (PEN) film (thickness: 25 μm) as a substrate layer. Next, the surface of the intermediate layer was irradiated with an electron beam under EVA1 conditions to form EVA1 as an intermediate layer. Furthermore, the adhesive A was applied to the surface and dried to form an adhesive resin layer having a thickness of 30 μm. As a result, an adhesive film having a substrate layer, an intermediate layer and an adhesive resin layer in this order was obtained.

[Example 2]
EVA was extruded to a thickness of 70 μm as an intermediate layer on a polyethylene terephthalate (PET) film (thickness: 50 μm) as a substrate layer. Next, the surface of the intermediate layer was irradiated with an electron beam under the conditions of EVA2 to form EVA2 as an intermediate layer. Furthermore, the adhesive A was applied to the surface and dried to form an adhesive resin layer having a thickness of 30 μm. As a result, an adhesive film having a substrate layer, an intermediate layer and an adhesive resin layer in this order was obtained.

[Example 3]
A pressure-sensitive adhesive film was obtained in the same manner as in Example 2, except that EVA3 was used in place of the electron beam used in EVA2, and EVA3 was used as the intermediate layer.

[Comparative Example 1]
After forming a film of EVA having a thickness of 120 μm as an intermediate layer, the adhesive B was applied to the surface of the intermediate layer without irradiating the surface of the intermediate layer with an electron beam. Then, it was dried to form an adhesive resin layer having a thickness of 10 μm. As a result, an adhesive film having an intermediate layer and an adhesive resin layer in this order was obtained.
The compression strain rate S at 150° C. of the adhesive film of Comparative Example 1 was 62.9%.

(Compressive strain rate S)
The compression strain rate S of the adhesive films obtained in Examples and Comparative Examples was measured by the following method.
The pressure-sensitive adhesive films obtained in Examples and Comparative Examples were cut into pieces of 10 mm×10 mm, and laminated to an original thickness of 5 mm to obtain measurement samples.
The obtained measurement sample was compressed in an environment of 150° C. using AG-100kNX (manufactured by Shimadzu Corporation) at a test speed of 5 mm/min. After that, the strain value [mm] (= (original thickness [mm]) - (thickness during compression [mm])) when a pressure of 10 kg/ ^cm2 was applied was measured, and the compression strain rate S [%]. was calculated from the following formula. Table 1 shows the results.
Compressive strain rate S [%] = (strain value [mm]) / (original thickness [mm]) x 100

<Evaluation>
The obtained adhesive films were evaluated as follows. Table 1 shows the results obtained.

(1) Chip Position Accuracy A silicon wafer was attached to the adhesive surface of the adhesive film of each example and comparative example, and the silicon wafer and the adhesive film attached to the silicon wafer were combined and diced into 10 mm×10 mm. The distance between the chips (before heating) at this time was observed and measured with a microscope.
Thereafter, the base layer side of the adhesive film attached to the silicon wafer was fixed by suction to a vacuum chuck table heated to 150° C., and removed after 10 minutes. After cooling the adhesive film to room temperature, the distance between the chips (after heating) was observed and measured under a microscope. The deviation of the chip position was calculated from the difference between (before heating) and (after heating).
Then, chip position accuracy was evaluated according to the following criteria.
○ (Good): Chip position deviation is less than 10 μm × (Bad): Chip position deviation is 10 μm or more

The adhesive films of Examples 1 to 3 had good chip position accuracy.

10 Base layer 20 Intermediate layer 30 Adhesive resin layer 50 Adhesive film 50A Adhesive film 60 Dicing blade 70 Electronic component 70A Electronic component 75 Terminal 90 Sample table 92 Probe card 95 Probe terminal 100 Structure

Claims (19)

Step (A) of preparing a structure comprising an adhesive film comprising a substrate layer, an intermediate layer and an adhesive resin layer in this order, and an electronic component attached to the adhesive resin layer;
A step (B) of dicing the electronic component with a dicing blade while being attached to the adhesive film;
A step (C) of evaluating the characteristics of the electronic component attached to the adhesive film in a temperature environment of 60° C. or higher and 200° C. or lower;
A method of manufacturing an electronic device comprising:
A method for producing an electronic device, wherein the pressure-sensitive adhesive film has a compressive strain rate S of 3% or less in an environment at 150° C. measured according to <Method> below.
<Method>
The adhesive film is cut into a size of 10 mm x 10 mm and laminated to an original thickness of 5 mm to obtain a measurement sample.
The obtained measurement sample is compressed at a test speed of 5 mm/min in an environment of 150° C., and when a pressure of 10 kg/cm ² is applied, the difference between the original thickness [mm] and the thickness [mm] during compression. The strain value [mm] is measured, and the compression strain rate S [%] is calculated from the following formula.
Compressive strain rate S [%] = {(strain value [mm]) / (original thickness [mm])} x 100 Step (A) of preparing a structure comprising an adhesive film comprising a substrate layer, an intermediate layer and an adhesive resin layer in this order, and an electronic component attached to the adhesive resin layer;
A step (B) of dicing the electronic component with a dicing blade while being attached to the adhesive film;
A step (C) of evaluating the characteristics of the electronic component attached to the adhesive film in a temperature environment of 60° C. or higher and 200° C. or lower;
A method of manufacturing an electronic device comprising:
The method of manufacturing an electronic device, wherein the intermediate layer contains a resin and has a gel fraction of 65% or more. In the method for manufacturing an electronic device according to claim 1 or 2,
When the thickness of the base layer is _X1 and the thickness of the intermediate layer is _X2 ,
A method of manufacturing an electronic device that satisfies the relationship of X ₂ >X ₁ . In the method for manufacturing an electronic device according to any one of claims 1 to 3,
The thickness (X ₁ ) of the base material layer is 1 μm or more and 100 μm or less,
A method for manufacturing an electronic device, wherein the intermediate layer has a thickness (X ₂ ) of 10 μm or more and 500 μm or less. In the method for manufacturing an electronic device according to any one of claims 1 to 4,
A method for manufacturing an electronic device, wherein the dicing blade has a tapered cross-sectional shape at the tip of the outer peripheral portion, and satisfies the relationship of X ₂ >R, where R is the diameter of the tip. In the method for manufacturing an electronic device according to any one of claims 1 to 5,
A method for manufacturing an electronic device, wherein the base material layer has a storage elastic modulus E' of 50 MPa or more and 10 GPa or less at 85°C, and the intermediate layer has a storage elastic modulus E' of 1 MPa or more and less than 50 MPa at 85°C. In the method for manufacturing an electronic device according to any one of claims 1 to 6,
A method of manufacturing an electronic device, wherein the intermediate layer contains a thermoplastic resin. In the method for manufacturing an electronic device according to claim 7,
The method of manufacturing an electronic device, wherein the thermoplastic resin contains one or more resins selected from the group consisting of ethylene/α-olefin copolymers and ethylene/vinyl ester copolymers. In the method for manufacturing an electronic device according to claim 8,
A method for producing an electronic device, wherein the ethylene-vinyl ester copolymer comprises an ethylene-vinyl acetate copolymer. In the method for manufacturing an electronic device according to any one of claims 1 to 9,
A method for manufacturing an electronic device, further comprising a step (D) of picking up the diced electronic component from the adhesive film after the step (B). In the method for manufacturing an electronic device according to any one of claims 1 to 10,
After at least one of the step (A) and the step (B), a step (F) of passing through solder reflow under conditions of a furnace temperature of 160 ° C. or higher and 260 ° C. or lower while being attached to the adhesive film. A method of manufacturing an electronic device, further comprising: An adhesive film used in the dicing process of electronic components,
A substrate layer, an intermediate layer and an adhesive resin layer are provided in this order,
An adhesive film having a compressive strain rate S of 3% or less in an environment at 150° C. measured according to <Method> below.
<Method>
The adhesive film is cut into a size of 10 mm x 10 mm and laminated to an original thickness of 5 mm to obtain a measurement sample.
The obtained measurement sample was compressed at a test speed of 5 mm/min in an environment of 150° C., and the strain value [mm] when a pressure of 10 kg/cm ² was applied (=(original thickness [mm])−( The thickness [mm]) during compression is measured, and the compression strain rate S [%] is calculated from the following formula.
Compressive strain rate S [%] = (strain value [mm]) / (original thickness [mm]) x 100 An adhesive film used in the dicing process of electronic components,
A substrate layer, an intermediate layer and an adhesive resin layer are provided in this order,
The pressure-sensitive adhesive film, wherein the intermediate layer contains a resin and has a gel fraction of 65% or more. In the adhesive film according to claim 12 or 13,
An adhesive film satisfying the relationship of X ₂ >X ₁ where X ₁ is the thickness of the base layer and X ₂ is the thickness of the intermediate layer. In the adhesive film according to any one of claims 12 to 14,
The thickness (X ₁ ) of the base material layer is 1 μm or more and 100 μm or less,
The pressure-sensitive adhesive film, wherein the intermediate layer has a thickness (X ₂ ) of 10 μm or more and 500 μm or less. In the adhesive film according to any one of claims 12 to 15,
The pressure-sensitive adhesive film, wherein the base layer has a storage modulus E' of 50 MPa or more and 10 GPa or less at 85°C, and the intermediate layer has a storage modulus E' of 1 MPa or more and less than 50 MPa at 85°C. In the adhesive film according to any one of claims 12 to 16,
An adhesive film, wherein the intermediate layer comprises a thermoplastic resin. 18. The adhesive film of claim 17,
The adhesive film, wherein the thermoplastic resin contains one or more selected from the group consisting of ethylene/α-olefin copolymers and ethylene/vinyl ester copolymers. 19. The adhesive film of claim 18,
The adhesive film, wherein the ethylene-vinyl ester copolymer comprises an ethylene-vinyl acetate copolymer.

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