JP2023096199A - Bandpass filter, and high-frequency signal amplifier circuit - Google Patents

Abstract

To suppress a planar area of a bandpass filter including post wall waveguides.SOLUTION: A bandpass filter 10 comprises a first post wall waveguide, a second post wall waveguide, a connection waveguide, a via conductor 51, a via conductor 52, and a via conductor 50. The first post wall waveguide and the second post wall waveguide are sequentially arranged in a first direction to transmit high-frequency signals in mutually reverse directions. The connection waveguide is arranged on a side in a second direction that is a transmission direction of the first post wall waveguide, being connected with one end of the first post wall waveguide and one end of the second post wall waveguide. The via conductor 51 is arranged in the first post wall waveguide at a position of a distance L1 from one end of the first post wall waveguide. The via conductor 52 is arranged in the second post wall waveguide at a position of a distance L2 from one end of the second post wall waveguide. The via conductor 50 is arranged in the connection waveguide at a position of a distance L3 from one end of the first post wall waveguide and one end of the second post wall waveguide.SELECTED DRAWING: Figure 1

Description

The present invention relates to bandpass filters for filtering high frequency signals.

US Pat. No. 6,300,000 describes a bandpass filter formed by post wall waveguides. The post wall waveguide of the bandpass filter described in Patent Document 1 is formed on one plane. The post wall waveguide includes a plurality of resonators connected in series by a plurality of short walls formed at predetermined intervals along the high frequency signal transmission direction. The bandpass filter described in Patent Document 1 functions as a bandpass filter by adjusting the resonance frequencies of a plurality of resonators.

Japanese Patent No. 6633117

However, in the configuration of Patent Document 1, the planar area becomes large.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to reduce the planar area of a bandpass filter using a post wall waveguide.

A bandpass filter of the present invention comprises a first post wall waveguide, a second post wall waveguide, a connection waveguide, a first via conductor, a second via conductor, and a third via conductor. The first post wall waveguide and the second post wall waveguide are arranged in order in the first direction and transmit high frequency signals in directions opposite to each other. The connection waveguide is arranged on the second direction side, which is the transmission direction, of the first post wall waveguide, and connects to one ends of the first post wall waveguide and the second post wall waveguide. The first via conductor is arranged within the first post wall waveguide and at a first distance from one end of the first post wall waveguide. The second via conductor is positioned within the second post wall waveguide and at a second distance from one end of the second post wall waveguide. The third via conductor is arranged within the connection waveguide and at a third distance from one end of the first post wall waveguide and the second post wall waveguide.

In this configuration, the first post wall waveguide and the second post wall waveguide are not arranged side by side on one surface, but overlapped (stacked). As a result, the area can be reduced. Furthermore, the region between the first via conductor and the third via conductor and the region between the second via conductor and the third via conductor act as resonators having a predetermined resonance frequency. As a result, the continuous region of the first post wall waveguide, the connection waveguide, and the second post wall waveguide functions as a bandpass filter.

FIG. 1 is an external perspective view of a bandpass filter according to the first embodiment. FIG. 2 is an exploded perspective view of the bandpass filter according to the first embodiment. FIG. 3A is a first plan view of the bandpass filter according to the first embodiment, and FIG. 3B is a second plan view of the bandpass filter according to the first embodiment. 4A, 4B, and 4C are side cross-sectional views of the bandpass filter according to the first embodiment. FIG. 5 is a characteristic diagram of S parameters of the bandpass filter according to the first embodiment. FIG. 6 is a table comparing the in-band loss and plane size of the bandpass filter according to the first embodiment (this application), the conventional bandpass filter of the post wall waveguide (comparative example), and the microstrip line. . FIG. 7A is a first plan view of the bandpass filter according to the second embodiment, and FIG. 7B is a second plan view of the bandpass filter according to the second embodiment. FIG. 8 is a side sectional view of the bandpass filter according to the second embodiment. FIG. 9 is a side cross-sectional view of a bandpass filter according to the third embodiment. FIG. 10 is a circuit diagram showing an example of a high frequency signal amplifier circuit to which the bandpass filter of the present invention is applied.

[First embodiment]
A bandpass filter according to a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is an external perspective view of a bandpass filter according to the first embodiment. FIG. 2 is an exploded perspective view of the bandpass filter according to the first embodiment. FIG. 3A is a first plan view of the bandpass filter according to the first embodiment, and FIG. 3B is a second plan view of the bandpass filter according to the first embodiment. 4A, 4B, and 4C are side cross-sectional views of the bandpass filter according to the first embodiment. 4(A), 4(B) and 4(C) respectively show the AA cross section, BB cross section and CC cross section of FIGS. 3(A) and 3(B).

As shown in FIGS. 1, 2, 3A, 3B, 4A, 4B, and 4C, the bandpass filter 10 includes a dielectric 20, Conductive layer 31 , conductive layer 32 , conductive layer 33 , multiple via conductors 401 , multiple via conductors 402 , multiple via conductors 411 , multiple via conductors 412 , multiple via conductors 421 , multiple via conductors 422 , via conductors 50 , via conductors 51 and via conductors 52 .

The conductor layer 31 corresponds to the first conductor layer, the conductor layer 32 corresponds to the second conductor layer, and the conductor layer 33 corresponds to the third conductor layer. The via conductor 51 corresponds to the first via conductor, the via conductor 52 corresponds to the second via conductor, and the via conductor 50 corresponds to the third via conductor. A plurality of via conductors 411 and a plurality of via conductors 421 correspond to the plurality of fourth via conductors, and a plurality of via conductors 412 and a plurality of via conductors 422 correspond to the plurality of fifth via conductors. A plurality of via conductors 401 and a plurality of via conductors 402 correspond to a plurality of sixth via conductors.

Also, the z-axis direction shown below corresponds to the first direction, and the x-axis direction corresponds to the second direction.

Dielectric 20 comprises dielectric layer 21 and dielectric layer 22 . The dielectric layer 21 and the dielectric layer 22 are in the shape of flat plates extending in the mutually orthogonal x-axis direction and y-axis direction. The dielectric layers 21 and 22 are laminated in the z-axis direction. In this configuration, the surface of the dielectric 20 on the dielectric layer 21 side (the surface orthogonal to the stacking direction) is the main surface 201 of the dielectric 20 . A surface of the dielectric 20 on the dielectric layer 22 side (a surface perpendicular to the stacking direction) is a main surface 202 of the dielectric 20 .

The conductor layer 31, the conductor layer 32, and the conductor layer 33 are flat films. Conductor layer 31 is disposed on main surface 201 of dielectric 20 . The conductor layer 32 is arranged on the contact surface (interface) between the dielectric layer 21 and the dielectric layer 22 in the dielectric 20 . Conductor layer 33 is disposed on main surface 202 of dielectric 20 .

The length of the conductor layer 32 in the x-axis direction is shorter than the lengths of the conductor layers 31 and 33 in the x-axis direction. In other words, one end 320 of the conductor layer 32 in the x-axis direction is positioned between the conductor layers 31 and 33 . As a result, in the x-axis direction of the dielectric 20, the conductor layers 31, 32, and 33 are arranged side by side in the z-axis direction, and the conductor layers 31 and 33 are arranged in the z-axis direction. are arranged side by side (regions without the conductor layer 32).

A plurality of via conductors 411 and a plurality of via conductors 421 are formed in a region where conductor layer 32 is arranged. A plurality of via conductors 411 and a plurality of via conductors 421 are formed in dielectric layer 21 . The plurality of via conductors 411 and the plurality of via conductors 421 are columnar and penetrate the dielectric layer 21 in the z-axis direction.

A plurality of via conductors 411 and a plurality of via conductors 421 are arranged at predetermined intervals along the x-axis direction. A row of the plurality of via conductors 411 and a row of the plurality of via conductors 421 run parallel along the x-axis direction and are spaced apart by a predetermined distance in the y-axis direction.

One end in the columnar axial direction of multiple via conductors 411 and multiple via conductors 421 is connected to conductor layer 31 . The other ends in the columnar axial direction of the plurality of via conductors 411 and the plurality of via conductors 421 are connected to conductor layer 32 .

Accordingly, the conductor layer 31, the conductor layer 32, the plurality of via conductors 411, the plurality of via conductors 421, and the portion of the dielectric layer 21 surrounded by these form the first post wall waveguide. In the first post wall waveguide, the direction parallel to the x-axis direction is the high-frequency signal transmission direction. Also, with this structure, one end of the first post wall waveguide in the high-frequency signal transmission direction is the one end 320 of the conductor layer 32 .

A plurality of via conductors 412 and a plurality of via conductors 422 are formed in a region where conductor layer 32 is arranged. A plurality of via conductors 412 and a plurality of via conductors 422 are formed in dielectric layer 22 . The plurality of via conductors 412 and the plurality of via conductors 422 are columnar and penetrate the dielectric layer 22 in the z-axis direction.

A plurality of via conductors 412 and a plurality of via conductors 422 are arranged at predetermined intervals along the x-axis direction. A row of the plurality of via conductors 412 and a row of the plurality of via conductors 422 run in parallel along the x-axis direction and are separated by a predetermined distance in the y-axis direction.

One end in the columnar axial direction of the plurality of via conductors 412 and the plurality of via conductors 422 is connected to conductor layer 32 . The other ends in the columnar axial direction of the plurality of via conductors 412 and the plurality of via conductors 422 are connected to conductor layer 33 .

As a result, the conductor layer 32, the conductor layer 33, the plurality of via conductors 412, the plurality of via conductors 422, and the portion of the dielectric layer 22 surrounded by these form the second post wall waveguide. In the second post wall waveguide, the high-frequency signal transmission direction is parallel to the x-axis direction. Also, with this structure, one end of the second post wall waveguide in the high-frequency signal transmission direction is the one end 320 of the conductor layer 32 .

Furthermore, the row of the plurality of via conductors 411 and the row of the plurality of via conductors 412 are arranged in the z-axis direction, and their positions in the x-axis direction and the y-axis direction are substantially the same. Similarly, a row of via conductors 421 and a row of via conductors 422 are aligned in the z-axis direction, and their positions in the x-axis direction and the y-axis direction are substantially the same.

Thereby, the first post wall waveguide and the second post wall waveguide are arranged side by side in the z-axis direction. The position of the first post wall waveguide and the position of the second post wall waveguide in the x-axis direction and the y-axis direction are substantially the same. Therefore, the planar area (area viewed in the z-axis direction) is reduced to about half that of the case where the first post wall waveguide and the second post wall waveguide are continuously formed on one surface.

A plurality of via conductors 401 and a plurality of via conductors 402 are formed in regions where conductor layers 32 are not arranged. A plurality of via conductors 401 and a plurality of via conductors 402 are formed in dielectric layers 21 and 22 . A plurality of via conductors 401 and a plurality of via conductors 402 are columnar and continuously penetrate dielectric layers 21 and 22 in the z-axis direction. In other words, the plurality of via conductors 401 and the plurality of via conductors 402 pass through the dielectric 20 in the z-axis direction.

A plurality of via conductors 401 and a plurality of via conductors 402 are arranged at predetermined intervals along the x-axis direction. A row of the plurality of via conductors 401 and a row of the plurality of via conductors 402 run parallel to each other along the x-axis direction and are separated from each other by a predetermined distance in the y-axis direction.

The plurality of via conductors 401 are arranged so as to be continuously aligned with the plurality of via conductors 411 and the plurality of via conductors 412 in the x-axis direction. The plurality of via conductors 402 are arranged so as to be continuously aligned with the plurality of via conductors 421 and the plurality of via conductors 422 in the x-axis direction.

One end in the columnar axial direction of multiple via conductors 401 and multiple via conductors 402 is connected to conductor layer 31 . The other end in the columnar axial direction of multiple via conductors 401 and multiple via conductors 402 is connected to conductor layer 33 .

The via conductor 50 is arranged at a position apart from the one end 320 of the conductor layer 32 in the x-axis direction by a distance (third distance) L2. The via conductor 50 is arranged on the opposite side of the first post wall waveguide and the second post wall waveguide with respect to one end 320 of the conductor layer 32 . That is, the via conductors 50 are arranged in regions where the conductor layer 32 is not formed. In other words, via conductors 50 are arranged in a region surrounded by conductor layer 31 , conductor layer 33 , multiple via conductors 401 , and multiple via conductors 402 .

The via conductor 50 is arranged at approximately the middle point between the row of the plurality of via conductors 401 and the row of the plurality of via conductors 402 in the y-axis direction.

Via conductors 50 are formed in dielectric layers 21 and 22 . Via conductor 50 has a columnar shape and continuously penetrates dielectric layers 21 and 22 in the z-axis direction. In other words, via conductor 50 penetrates dielectric 20 in the z-axis direction.

One axial end of the columnar via conductor 50 is connected to conductor layer 31 . The other axial end of the columnar via conductor 50 is connected to conductor layer 33 .

As a result, the conductor layer 31, the conductor layer 33, the plurality of via conductors 401, the plurality of via conductors 402, the via conductors 50, and the portion of the dielectric 20 surrounded by these form a connection waveguide. With this configuration, the connection waveguide connects the first post wall waveguide and the second post wall waveguide. Thereby, as shown in FIG. 4A, for example, the high frequency signal is transmitted from the first post wall waveguide through the connection waveguide to the second post wall waveguide. Alternatively, the high frequency signal is transmitted from the second post wall waveguide through the connection waveguide to the first post wall waveguide.

The via conductor 51 is arranged at a position a distance (first distance) L1 away from one end 320 of the conductor layer 32 in the x-axis direction. Via conductor 51 is arranged in a region surrounded by conductor layer 31 , conductor layer 32 , multiple via conductors 411 , and multiple via conductors 421 . In other words, the via conductor 51 is arranged within the first post wall waveguide.

The via conductor 51 is arranged at a position closer to the row of the plurality of via conductors 411 than the row of the plurality of via conductors 421 in the y-axis direction. In other words, the distance W1 between the plurality of via conductors 411 and the via conductors 51 in the y-axis direction is less than half the width of the first post wall waveguide.

Via conductors 51 are formed in dielectric layer 21 . The via conductor 51 is columnar and penetrates the dielectric layer 21 in the z-axis direction. One axial end of the columnar via conductor 51 is connected to conductor layer 31 . The other end in the columnar axial direction of via conductor 51 is connected to conductor layer 32 .

The distance (first added distance (L1+L2)) between via conductor 50 and via conductor 51 in the x-axis direction is half the wavelength of the high-frequency signal passed by bandpass filter 10 .

As a result, the region between via conductor 50 and via conductor 51 acts as a resonator that resonates at the frequency of the high-frequency signal passed by bandpass filter 10 .

The via conductor 52 is arranged at a position a distance (second distance) L1 away from the one end 320 of the conductor layer 32 in the x-axis direction. Via conductor 52 is arranged in a region surrounded by conductor layer 32 , conductor layer 33 , multiple via conductors 412 , and multiple via conductors 422 . In other words, the via conductor 52 is arranged within the second post wall waveguide.

The via conductor 52 is arranged at a position closer to the row of the plurality of via conductors 412 than the row of the plurality of via conductors 422 in the y-axis direction. In other words, the distance W2 between the plurality of via conductors 412 and the via conductors 52 in the y-axis direction is less than half the width of the second post wall waveguide.

Via conductors 52 are formed in dielectric layer 22 . The via conductor 52 is columnar and penetrates the dielectric layer 22 in the z-axis direction. One axial end of the columnar via conductor 52 is connected to the conductor layer 32 . The other end in the columnar axial direction of via conductor 52 is connected to conductor layer 33 .

The distance (second added distance (L1+L2)) between via conductors 50 and via conductors 52 in the x-axis direction is half the wavelength of the high-frequency signal passed by bandpass filter 10 .

As a result, the region between via conductor 50 and via conductor 52 acts as a resonator that resonates at the frequency of the high-frequency signal passed by bandpass filter 10 .

In this way, the band-pass filter 10 having the above configuration can pass a desired frequency (frequency band) and attenuate other frequency bands.

Furthermore, as described above, since the first post wall waveguide and the second post wall waveguide overlap when viewed in the z-axis direction, the planar area of the bandpass filter 10 can be reduced.

In particular, post wall waveguides and filters that transmit X-band high-frequency signals tend to have a large planar area due to the wavelength of the high-frequency signal. However, by providing this configuration, the band-pass filter 10 can reduce the planar area even when applied to high-frequency signals in the X band, and this effect is more effective.

FIG. 5 is a characteristic diagram of S parameters of the bandpass filter according to the first embodiment. In FIG. 5, the solid line indicates S21 and the dashed line indicates S11. As shown in FIG. 5, the bandpass filter 10 can pass a desired frequency band and attenuate other frequency bands.

FIG. 6 is a table comparing the in-band loss and plane size of the bandpass filter according to the first embodiment (this application), the conventional bandpass filter of the post wall waveguide (comparative example), and the microstrip line. . The conventional post wall waveguide shown in FIG. 6 has a first post wall waveguide and a second post wall waveguide formed on one surface, and this structure is provided with a filter function. As shown in FIG. 6, the bandpass filter 10 according to the first embodiment has a similar in-band loss as compared with a conventional bandpass filter using a post wall waveguide and a bandpass filter using a microstrip line. can be suppressed. In addition, the bandpass filter 10 according to the first embodiment has a significantly smaller planar size (planar area) than conventional bandpass filters using post wall waveguides and bandpass filters using microstrip lines. can.

In the band-pass filter 10, the distance L2 between the one end 320 of the conductor layer 32 and the via conductor 50 can be appropriately set while keeping the distance between the via conductor 51 and the via conductor 52 and the via conductor 50 constant. By setting the distance L2, the bandpass filter 10 can set the coupling coefficient (coupling degree) between the first post wall waveguide and the second post wall waveguide. The bandpass filter 10 can appropriately set the passband width by setting the coupling coefficient (coupling degree). Thereby, the bandpass filter 10 can realize a filter with a desired passband width.

Also, the positions of via conductors 51 and via conductors 52 (positions viewed in the z-axis direction) do not necessarily have to be the same. However, by making the positions of the via conductors 51 and the via conductors 52 the same, the configuration of the bandpass filter 10 is simplified, and the manufacturing is facilitated. Furthermore, for example, via conductors 51 and via conductors 52 can be realized by one via conductor penetrating both dielectric layer 21 and dielectric layer 22 . This makes it possible to further simplify the manufacture of via conductors 51 and via conductors 52 .

[Second embodiment]
A bandpass filter according to a second embodiment of the present invention will be described with reference to the drawings. FIG. 7A is a first plan view of the bandpass filter according to the second embodiment, and FIG. 7B is a second plan view of the bandpass filter according to the second embodiment. FIG. 8 is a side sectional view of the bandpass filter according to the second embodiment. FIG. 8 shows a DD section of FIGS. 7A and 7B.

As shown in FIGS. 7A, 7B, and 8, the bandpass filter 10A according to the second embodiment has a dielectric 20A in contrast to the bandpass filter 10 according to the first embodiment. , in that slits 310 are provided. The rest of the configuration of the bandpass filter 10A is the same as that of the bandpass filter 10, and the description of the same portions will be omitted.

Dielectric 20A is a laminate of dielectric layer 21A and dielectric layer 22 . Thickness D1 of dielectric layer 21A is smaller than thickness D2 of dielectric layer 22 .

With such a configuration, the thickness of the dielectric 20A can be reduced. As a result, the bandpass filter 10A can have a smaller planar area and a smaller thickness.

The conductor layer 31 has a slit 310 so as to include the position of the foot of a perpendicular line extending from one end 320 (end) of the conductor layer 32 to the conductor layer 31 . The slit 310 is a conductor-free portion (conductor non-forming portion) in the flat conductor. The slit 310 is, for example, rectangular when viewed in the z-axis direction, and has a length Ls in the x-axis direction and a length Ws in the y-axis direction.

The slit 310 includes one end 320 of the conductor layer 32 and is formed from this end 320 toward the first post wall waveguide.

By providing the slits 310, even if the dielectric layer 21A is thinner than the dielectric layer 22, the capacitive component between the conductor layers 31 and 32 can be suppressed, and the first post wall waveguide and the second post wall waveguide can be controlled. Impedance matching with

Therefore, the bandpass filter 10A can realize excellent pass characteristics while reducing the planar area and thickness.

Note that the length Ls and the length Ws of the slit 310 can be set as appropriate. Thereby, the bandpass filter 10A can realize impedance matching more properly.

[Third Embodiment]
A bandpass filter according to a third embodiment of the present invention will be described with reference to the drawings. FIG. 9 is a side cross-sectional view of a bandpass filter according to the third embodiment. FIG. 9 shows a cross section at the same position as in FIG. 4(C).

As shown in FIG. 9, the bandpass filter 10B according to the third embodiment includes a dielectric 20B, conductor layers 321 and 322, and via conductors 329, which are different from the bandpass filter 10 according to the first embodiment. different in that respect. The rest of the configuration of the bandpass filter 10B is the same as that of the bandpass filter 10, and the description of the same portions will be omitted.

Bandpass filter 10B comprises dielectric 20B. The dielectric 20B is a laminate of a plurality of dielectric layers 21, 22, 23. FIG. Dielectric layer 23 is disposed between dielectric layers 21 and 22 .

Bandpass filter 10</b>B includes conductor layer 321 , conductor layer 322 , and via conductor 329 . The conductor layer 321 is arranged on the contact surface (interface) between the dielectric layers 21 and 23 . The conductor layer 322 is arranged on the contact surface (interface) between the dielectric layers 23 and 22 .

The lengths of the conductor layers 321 and 322 in the x-axis direction are shorter than those of the conductor layers 31 and 33 . That is, one end 3210 of the conductor layer 321 and one end 3220 of the conductor layer 322 are arranged between the conductor layers 31 and 33 .

Via conductors 329 are formed in dielectric layer 23 . Via conductor 329 connects near one end 3210 of conductor layer 321 and near one end 3220 of conductor layer 322 . A plurality of via conductors 329 are arranged, and the plurality of via conductors 329 are arranged side by side at predetermined intervals in the y-axis direction.

With such a configuration, the portion composed of the conductor layer 321 , the conductor layer 322 , and the via conductor 329 realizes the same function as the conductor layer 32 of the bandpass filter 10 .

With such a configuration, the band-pass filter 10B can achieve desired filter characteristics and reduce the plane area, like the band-pass filter 10 . Furthermore, the bandpass filter 10B can appropriately adjust the positions of the first post wall waveguide and the second post wall waveguide in the z-axis direction. For example, the bandpass filter 10B can realize desired filter characteristics and reduce the planar area even if the first post wall waveguide and the second post wall waveguide are separated in the z-axis direction.

(Application example of high frequency circuit)
The band-pass filters 10, 10A, and 10B configured as described above can be applied to, for example, the following high-frequency signal amplifier circuit. FIG. 10 is a circuit diagram showing an example of a high frequency signal amplifier circuit to which the bandpass filter of the present invention is applied.

As shown in FIG. 10, the high frequency signal amplifier circuit 80 includes an amplifier 811, an amplifier 812, an amplifier 813, a plurality of amplifiers 814, a bandpass filter 82, a divider 83, a combiner 84, and a waveguide 85. The high frequency signal amplifier circuit 80 also has an input port 801 and an output port 802 .

Input port 801 connects to amplifier 811 . Amplifier 811 connects to bandpass filter 82 . Bandpass filter 82 connects to amplifier 812 . Amplifier 812 connects to amplifier 813 through waveguide 85 . Amplifier 813 connects to distributor 83 . A distributor 83 connects to a plurality of amplifiers 814 . A plurality of amplifiers 814 connect to combiner 84 . Combiner 84 connects to output port 802 .

A high frequency signal amplifier circuit 80 receives a high frequency signal from an input port 801 . A high-frequency signal input at the input port 801 is output to the amplifier 811 . Amplifier 811 amplifies the high frequency signal and outputs it to bandpass filter 82 .

The band-pass filter 82 filters the input high-frequency signal by passing the frequency band output from the high-frequency signal amplifier circuit 80 and attenuating other frequency bands. Bandpass filter 82 outputs the filtered high frequency signal to amplifier 812 .

The amplifier 812 amplifies the high frequency signal from the bandpass filter 82 and outputs it to the waveguide 85 . Waveguide 85 transmits the high frequency signal to amplifier 813 . The amplifier 813 amplifies the high frequency signal from the waveguide 85 and outputs it to the distributor 83 .

The distributor 83 distributes the input high-frequency signal and outputs it to a plurality of amplifiers 814 . A plurality of amplifiers 814 respectively amplify the input high-frequency signals and output them to the combiner 84 . Combiner 84 combines the high-frequency signals from multiple amplifiers 814 and outputs the combined signal to output port 802 .

Thus, the high-frequency signal amplifier circuit 80 constitutes a four-stage amplifier circuit in the transmission direction of the high-frequency signal. As a result, the high-frequency signal amplifier circuit 80 amplifies the high-frequency signal with a high gain as a whole, and can constitute a so-called high-power amplifier.

In this example, the high-frequency signal amplifier circuit 80 is configured with four stages of amplifier circuits. However, the number of stages constituting the high-frequency signal amplifier circuit 80 is not limited to four stages. Also, the number of amplifiers connected in parallel to each stage is not limited to the configuration described above.

In such a configuration, the bandpass filter 82 applies the configuration of the bandpass filters 10, 10A, and 10B described above. As a result, the high-frequency signal amplifier circuit 80 amplifies the high-frequency signal of the desired frequency with high power, suppresses unnecessary radiation to the outside in the band-pass filter 82, and can reduce the planar area.

10, 10A, 10B: bandpass filters 20, 20A, 20B: dielectrics 21, 21A, 22, 23: dielectric layers 31, 32, 33, 321, 322: conductor layers 50, 51, 52: via conductors 80: High-frequency signal amplifier circuit 82: bandpass filter 83: distributor 84: combiner 85: waveguides 201, 202: main surface 310: slits 320, 3210, 3220: one end 329, 401, 402, 411, 412, 421, 422 : via conductor 801: input port 802: output port 811, 812, 813, 814: amplifier

Claims (9)

a first post wall waveguide and a second post wall waveguide arranged in order in a first direction and transmitting high frequency signals in directions opposite to each other;
a connection waveguide disposed on the second direction side, which is the transmission direction, of the first post wall waveguide and connected to one ends of the first post wall waveguide and the second post wall waveguide;
a first via conductor disposed within the first post wall waveguide and at a first distance from one end of the first post wall waveguide;
a second via conductor disposed within the second post wall waveguide and at a second distance from one end of the second post wall waveguide;
a third via conductor disposed in the connection waveguide at a position a third distance from one end of the first post wall waveguide and the second post wall waveguide;
A bandpass filter comprising: A bandpass filter according to claim 1,
A first addition distance obtained by adding the first distance and the third distance, and a second addition distance obtained by adding the second distance and the third distance are set based on the wavelength of the high-frequency signal.
bandpass filter. A bandpass filter according to claim 1 or claim 2,
The third distance is set based on a coupling coefficient between the first post wall waveguide and the second post wall waveguide,
bandpass filter. The bandpass filter according to any one of claims 1 to 3,
The first post wall waveguide,
a first conductor layer;
a second conductor layer running parallel to the first conductor layer along the second direction and having a length in the second direction shorter than that of the first conductor layer;
a plurality of fourth via conductors connecting the first conductor layer and the second conductor layer;
The second post wall waveguide,
the second conductor layer;
arranged on the first direction side with respect to the second conductor layer, running parallel to the second conductor layer along the second direction, and having a length in the second direction longer than that of the second conductor layer a third conductor layer;
a plurality of fifth via conductors connecting the second conductor layer and the third conductor layer;
The connection waveguide is
the first conductor layer;
the third conductor layer;
arranged opposite to the first post wall waveguide and the second post wall waveguide from one end of the second conductor layer in the second direction and connecting the first conductor layer and the third conductor layer; a plurality of sixth via conductors,
the first via conductor is arranged in a region surrounded by the first conductor layer, the second conductor layer, and the plurality of fourth via conductors;
the second via conductor is arranged in a region surrounded by the second conductor layer, the third conductor layer, and the plurality of fifth via conductors;
The third via conductor is arranged in a region surrounded by the first conductor layer, the third conductor layer, and the plurality of sixth via conductors.
bandpass filter. A bandpass filter according to claim 4,
The first conductor layer is
Having a slit including a position where a perpendicular drawn from the end of the second conductor layer to the surface of the first conductor layer intersects,
bandpass filter. A bandpass filter according to claim 5,
the distance between the first conductor layer and the second conductor layer in the first direction is shorter than the distance between the second conductor layer and the third conductor layer;
bandpass filter. The bandpass filter according to any one of claims 1 to 6,
the first via conductor and the second via conductor overlap in position in the second direction and are aligned in the first direction;
bandpass filter. A bandpass filter according to claim 7,
The first via conductor and the second via conductor consist of one via conductor extending in the first direction,
bandpass filter. A bandpass filter according to any one of claims 1 to 8;
an amplifier connected to the bandpass filter and amplifying the high frequency signal;
A high frequency signal amplifier circuit.

Images