JP2023094360A - Imaging apparatus and imaging method - Google Patents

Abstract

To measure a distance to an object using laser diode light having different wavelengths without any mutual interferences.SOLUTION: An imaging apparatus includes: a first light source that radiates first irradiation light, which is light having a first wavelength; a second light source that radiates second irradiation light, which is light having a second wavelength different from the first wavelength; a first detector that detects first reflected light, which is light reflected by irradiating an object with the first irradiation light; and a second detector that detects second reflected light, which is light reflected by irradiating the object with the second irradiation light. A first period in which the first light source radiates the first irradiation light and the first detector detects the first reflected light does not overlap with a second period in which the second light source radiates the second irradiation light and the second detector detects the second reflected light.SELECTED DRAWING: Figure 13

Description

The present invention relates to an imaging device and an imaging method.

Conventionally, there has been a technique of irradiating an object with laser diode light having a predetermined wavelength, receiving the light reflected by the object, and measuring the distance to the object by analyzing the received light (for example, , see Patent Document 1).

Japanese Patent Application Laid-Open No. 2021-18079

However, certain wavelengths of laser diode light used for ranging may be attenuated by the solar spectrum reaching the earth's surface. Also, by using a wavelength other than the specific wavelength, it is possible to avoid attenuation due to the solar spectrum, but indoors where the solar spectrum is not affected, the transmittance and the spectral sensitivity of the image sensor are reduced. was there.
That is, according to the prior art, the suitable wavelength of the laser diode light used for distance measurement differs between indoors and outdoors, so if the measurement environment changes, the distance to the object cannot be accurately measured. There were problems such as
In order to solve such problems, it is conceivable to measure the distance to an object with high precision using laser diode lights of different wavelengths. However, there is a problem that laser diode lights with different wavelengths interfere with each other.

The present invention has been made in view of such circumstances, and aims to provide a technology capable of measuring the distance to an object using laser diode lights of different wavelengths without mutual interference. .

An imaging device according to an aspect of the present invention includes a first light source that emits first irradiation light that is light having a first wavelength, and second irradiation light that is light having a second wavelength different from the first wavelength. a second light source that irradiates an object with the first irradiation light, a first detection unit that detects the first reflected light that is the reflected light, and the second irradiation light that is applied to the object and a second detector that detects the second reflected light that is the reflected light, the first light source irradiating the first irradiation light, and the first detector that detects the first reflected light. The first period does not overlap with the second period during which the second light source emits the second irradiation light and the second detection unit detects the second reflected light.

Further, in the imaging device according to the aspect of the present invention, the first period and the second period are periods that alternate in a predetermined cycle.

Further, in the imaging device according to an aspect of the present invention, the first period is a period within a first period, and the second period is a period within a second period whose phase is different from that of the first period. be.

Further, in the imaging device according to an aspect of the present invention, the phase difference between the first cycle and the second cycle is half a cycle.

Further, an imaging method according to an aspect of the present invention includes a first irradiation step of irradiating first irradiation light that is light having a first wavelength; 2 a second irradiation step of irradiating irradiation light; a first detection step of detecting, by a first detection unit, first reflected light that is reflected light after the first irradiation light is irradiated onto an object; a second detection step of detecting, by a second detection unit, second reflected light, which is the reflected light of the object irradiated with the irradiation light, wherein the first irradiation step irradiates the first irradiation light; , a first period in which the first reflected light is detected by the first detection step; and a second period in which the second irradiation light is emitted by the second irradiation step and the second reflected light is detected by the second detection step. The two periods do not overlap.

ADVANTAGE OF THE INVENTION According to this invention, the distance to an object can be measured using the laser diode light of a different wavelength, without mutually interfering.

1 is a diagram for explaining an outline of an imaging device according to Embodiment 1; FIG. 1 is a schematic diagram showing an example of a cross section of an imaging device according to Embodiment 1. FIG. 3 is a schematic diagram showing an example of a cross section of an imaging device according to Modification 1 of Embodiment 1. FIG. FIG. 5 is a schematic diagram showing an example of a cross section of an imaging device according to Modification 2 of Embodiment 1; FIG. 11 is a diagram for explaining an imaging device according to Modification 3 of Embodiment 1; FIG. 11 is a diagram for explaining an imaging device according to Modification 4 of Embodiment 1; FIG. 10 is a diagram for explaining an effect when the number of pixels and the angle of view of the RGB sensor and the ToF sensor are the same in the imaging device according to the first embodiment; FIG. 10 is a diagram for explaining an effect when the number of pixels of the RGB sensor and the ToF sensor and the angle-of-view matching parameter are known in the imaging device according to the first embodiment; 4 is a diagram for explaining sharing of distortion correction values in the imaging apparatus according to the first embodiment; FIG. 4 is a diagram for explaining sharing of peripheral light falloff correction data in the imaging apparatus according to the first embodiment; FIG. 4 is a diagram for explaining sharing of chromatic aberration correction data in the imaging apparatus according to the first embodiment; FIG. FIG. 10 is a diagram for explaining interference of near-infrared light of two different wavelengths according to Embodiment 2; 10 is a timing chart showing an example of operation periods of laser light irradiation and exposure according to Embodiment 2. FIG. FIG. 11 is a diagram for explaining a problem to be solved by the imaging device in Embodiment 3; FIG. 12 is a diagram showing an example of indoor distance measurement according to Embodiment 3; FIG. 12 is a diagram showing an example of outdoor distance measurement according to Embodiment 3; FIG. 11 is a schematic diagram showing an example of the arrangement of light sources according to Embodiment 3; FIG. 11 is a schematic diagram showing an example of arrangement of light sources according to a modification of Embodiment 3;

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings. The embodiments described below are merely examples, and embodiments to which the present invention is applied are not limited to the following embodiments.
In addition, "based on XX" in the present application means "based on at least XX", and includes cases based on other elements in addition to XX. Moreover, "based on XX" is not limited to the case of using XX directly, but also includes the case of being based on what has been calculated or processed with respect to XX. "XX" is an arbitrary element (for example, arbitrary information).
Also, in the following description, the attitude of the imaging device 10 may be indicated by a three-dimensional orthogonal coordinate system of x-, y-, and z-axes.

[Embodiment 1]
FIG. 1 is a diagram for explaining an outline of an imaging device according to Embodiment 1. FIG. An outline of the imaging device 10 will be described with reference to the figure.
The imaging device 10 measures a distance L1 to an object T existing in a three-dimensional space. The imaging device 10 may measure the distance L1 to the object T outdoors affected by the sunlight spectrum, or measure the distance L1 to the object T indoors not affected by the sunlight spectrum. good.

The imaging device 10 includes a lens 110, a laser diode 120, and a sensor (not shown). Lens 110 may be, for example, an objective lens. The laser diode 120 is a light source that irradiates the object T with irradiation light having a predetermined wavelength. The irradiation light emitted by the laser diode 120 is reflected by the object T and enters the lens 110 . The sensor receives reflected light reflected by the object T via the lens 110 . The imaging device 10 measures the distance from the imaging device 10 to the object T by analyzing the received reflected light.

The imaging device 10 may include multiple laser diodes 120 . Also, the irradiation lights emitted by the plurality of laser diodes 120 included in the imaging device 10 may have different wavelengths. When the imaging device 10 includes a plurality of laser diodes 120 that emit irradiation light having different wavelengths, the laser diode 120 that emits the first irradiation light BM1-1 having the first wavelength is referred to as a first laser diode 121. , the laser diode 120 emitting the second irradiation light BM2-1 having the second wavelength is referred to as a second laser diode 122. As shown in FIG. The reflected light of the first irradiation light BM1-1 reflected by the object T is referred to as the first reflected light BM1-2, and the reflected light of the second irradiation light BM2-1 reflected by the target T is referred to as the second reflected light BM2-2. and described.

Note that the imaging device 10 may include a plurality of laser diodes 120 that emit irradiation light having the same wavelength. That is, the imaging device 10 may include multiple first laser diodes 121 and multiple second laser diodes 122 . A plurality of laser diodes 120 may be provided on a circumference around the optical axis on which the lens 110 receives the reflected light. Further, the imaging device 10 may include the number of sensors corresponding to the types of wavelengths of light emitted from the plurality of laser diodes 120 .

Also, the imaging device 10 may include an image sensor (not shown). When the imaging device 10 includes an image sensor, the object T is imaged at the angle of view α. Specifically, a plurality of pixels of the image sensor receive visible light imaged by the lens 110 and form image information based on the received information.

FIG. 2 is a schematic diagram showing an example of a cross section of the imaging device according to the first embodiment. An example of the configuration of the imaging device 10 will be described with reference to the figure.
The imaging device 10 includes a lens 110 , a laser diode 120 , an image capturing section 140 and a distance measuring section 150 . The image capturing unit 140 captures an image using visible light, and the distance measurement unit 150 performs distance measurement using infrared light. That is, the imaging device 10 may be a ToF (Time Of Flight) camera that measures the three-dimensional shape of an object.

Here, it is known that sunlight is absorbed and attenuated by the earth's atmosphere before reaching the earth's surface. In particular, absorption by water vapor molecules present in the atmosphere has a great effect on wavelength characteristics. Specifically, at wavelengths such as 850 [nm (nanometers)], 940 [nm], and 1110 [nm], attenuation of wavelengths due to absorption by water vapor molecules is remarkable. Also, at 730 [nm], wavelength attenuation due to absorption by oxygen molecules is remarkable.

Three factors, ie, sunlight attenuation, lens transmittance, and image sensor spectral sensitivity, are particularly important for distance measurement technology using infrared rays. In the present embodiment, a laser diode that irradiates near-infrared light will be described as an example of using laser diode light in a well-balanced 850 [nm] and 940 [nm] wavelength band. Laser diode light in the 850 [nm] wavelength band is used for indoor distance measurement, and laser diode light in the 940 [nm] wavelength band is used for outdoor distance measurement.

The imaging device 10 includes a first laser diode 121 as a light source that emits laser diode light in the 940 [nm] wavelength band. The imaging device 10 also includes a second laser diode 122 as a light source that emits laser diode light in the 850 [nm] wavelength band.

940 [nm] is also described as the first wavelength. Further, the irradiation light having a wavelength of 940 [nm] is also referred to as first irradiation light. In other words, the first laser diode 121 is a first light source that emits first irradiation light, which is light having a first wavelength.

850 [nm] is also described as a second wavelength. Also, the irradiation light having a wavelength of 850 [nm] is also referred to as the second irradiation light. In other words, the second laser diode 122 is a second light source that emits second irradiation light, which is light having a second wavelength. The first wavelength and the second wavelength are different wavelengths. In addition, it is desirable that the wavelength band of the first wavelength is significantly attenuated by sunlight as compared to the wavelength band of the second wavelength.

The image capturing unit 140 captures an image using visible light out of the light incident on the lens 110 . The image capturing unit 140 includes a visible light reflecting dichroic film 141 , an infrared cut filter 142 , a sensor 143 and a reflecting surface 145 .

The visible-light reflecting dichroic film 141 reflects visible light and transmits light of wavelengths in the near-infrared region or higher (that is, infrared light).
Of the light L incident on the lens 110, the visible light VL is reflected by the visible light reflecting dichroic film 141, and the infrared light IL is transmitted. An optical axis of the lens 110 is described as an optical axis OA. The visible light VL reflected by the visible light reflecting dichroic film 141 is reflected by the reflecting surface 145 and enters the sensor 143 via the infrared cut filter 142 .

Visible light VL and infrared light (that is, first reflected light and second reflected light) pass through substantially the same optical axis between lens 110 and visible light reflecting dichroic film 141 . The substantially identical range may be, for example, a range in which an optical path is formed by a common lens.

The infrared cut filter 142 blocks infrared light out of the visible light VL.
The sensor 143 detects visible light VL incident through the infrared cut filter 142 . Sensor 143 comprises a plurality of pixels 144 . Specifically, the sensor 143 may be an image sensor in which RGB pixels are arranged in a Bayer array.

Note that the sensor 143 is also referred to as a third detection section, and the visible light reflecting dichroic film 141 is also referred to as a visible light reflecting film. The third detector detects visible light. The visible light reflecting film reflects the visible light VL incident on the lens 110 to guide it to the sensor 143 . In addition, the visible light reflecting film transmits the first reflected light and the second reflected light, which are infrared light, out of the light L incident on the lens 110 . The visible light reflecting film transmits the infrared light out of the light L incident on the lens 110 , thereby guiding the first reflected light to the sensor 153 and the second reflected light to the sensor 163 .
Also, the visible light reflecting film is provided on the optical path between the lens 110 and the half mirror 130 .

Distance measuring unit 150 includes half mirror 130 , bandpass filter 152 , sensor 153 , bandpass filter 162 , and sensor 163 . The sensors 153 and 163 are also described as ToF sensors.

Infrared light transmitted through the visible light reflecting dichroic film 141 is split into two optical paths of transmitted light and reflected light by the half mirror 130 in the distance measuring unit 150 . Half mirror 130 may be, for example, a dielectric half mirror.

Half mirror 130 is provided on the optical path between lens 110 and sensor 153 and on the optical path between lens 110 and sensor 163 . Also, the first reflected light and the second reflected light pass through substantially the same optical axis between the lens 110 and the half mirror 130 . The substantially identical range may be, for example, a range in which an optical path is formed by a common lens.

Note that the half mirror 130 may be an optical member that transmits a part of the incident light and reflects the other part of the light. The half mirror 130 guides the first reflected light to the sensor 153 by transmitting part of the light emitted from the first laser diode 121 and reflected by the target T. The half mirror 130 also reflects part of the light emitted from the second laser diode 122 and reflected by the object T, thereby guiding the second reflected light to the sensor 163 .

The light split into two optical paths of transmitted light and reflected light by the half mirror 130 is received by a ToF sensor arranged on each optical path. Specifically, light transmitted through the half mirror 130 is received by the sensor 153 , and light reflected by the half mirror 130 is received by the sensor 163 .

In front of each ToF sensor (that is, on the optical path between the half mirror 130 and each ToF sensor), an optical bandpass filter is arranged to pass only light having a predetermined narrow band of wavelengths. Specifically, a bandpass filter 152 is placed in front of the sensor 153 . The bandpass filter 152 passes only the narrow band of 940 [nm]. A bandpass filter 162 is arranged in front of the sensor 163 . The bandpass filter 162 passes only the 850 [nm] narrow band.

Note that the sensor 153 is also referred to as a first detection section. The first detection unit detects the first reflected light, which is the reflected light of the object T irradiated with the first irradiation light from the first laser diode 121 .
Moreover, the sensor 163 is also described as a second detection unit. The second detection unit detects the second reflected light, which is the light reflected by the object T irradiated with the second irradiation light from the second laser diode 122 .

By changing the spectral ratio of the transmitted light and the reflected light by the half mirror 130 according to the conditions of use, it is possible to perform optimum signal detection in both the 850 [nm] band and the 940 [nm] band.

[Modification 1 of Embodiment 1]
3 is a schematic diagram illustrating an example of a cross section of an imaging device according to Modification 1 of Embodiment 1. FIG. An example of the configuration of an imaging device 10A, which is the first modification of the imaging device 10, will be described with reference to the same drawing. The imaging device 10A differs from the imaging device 10 in that it does not have the half mirror 130 and further includes a switchable bandpass filter 172 . By including the switchable bandpass filter 172, the imaging apparatus 10A does not need to include two ToF sensors, and detects both the first reflected light and the second reflected light using one ToF sensor. In the description of the imaging device 10A, the same reference numerals are given to the same configurations as those of the imaging device 10, and the description may be omitted.

Visible light VL and infrared light IL enter lens 110 . Here, the visible light VL and the infrared light IL enter the lens 110 along a common optical axis OA.
The light L incident on the lens 110 is incident on the visible light reflecting dichroic film 141 . The reflective dichroic film 141 reflects the incident visible light VL and guides it to the sensor 143 . Also, the reflective dichroic film 141 transmits the incident infrared light IL and guides it to the switchable bandpass filter 172 .

The switchable bandpass filter 172 has both the function of the bandpass filter 152 and the function of the bandpass filter 162 . The switchable bandpass filter 172 switches to one of the two functions by time division. That is, the switchable bandpass filter 172 exclusively has a period for passing only the 940 [nm] narrow band and a period for passing only the 850 [nm] narrow band.

Specifically, the switched bandpass filter 172 may have a rotating structure that rotates the filter. In this case, the filter has a disk-like shape, and has a filter that passes only a 940 [nm] narrow band in one semicircular portion, and a filter that passes only a narrow band of 850 [nm] in the other semicircular portion. It may have a filter that allows it to pass. By rotating the disk and aligning the optical axis with one of the filters, the switchable bandpass filter 172 passes only the 940 [nm] narrow band and the 850 [nm] narrow band. The period may be switched exclusively.

Also, the switchable bandpass filter 172 may have a slide structure for sliding the filter. In this case, the filter has a rectangular shape and has a filter on one side that passes only the 940 [nm] narrow band, and a filter that passes only the 850 [nm] narrow band on the other side. You may have By sliding the rectangular filter and aligning the optical axis with one of the filters, the switchable bandpass filter 172 has a period for passing only the 940 [nm] narrow band and a period for passing only the 850 [nm] narrow band. You may switch exclusively with the period which passes through.

[Modification 2 of Embodiment 1]
4 is a schematic diagram illustrating an example of a cross section of an imaging device according to Modification 2 of Embodiment 1. FIG. An example of the configuration of an imaging device 10B, which is a modification 2 of the imaging device 10, will be described with reference to FIG. The image pickup device 10B differs from the image pickup device 10 in that it does not have an image pickup section 140 . That is, the imaging device 10B is a ranging sensor that does not have an image sensor. In the description of the imaging device 10B, the same reference numerals are given to the same configurations as those of the imaging device 10, and the description may be omitted.

The light L incident on the lens 110 is split by the half mirror 130 into two optical paths of transmitted light and reflected light. Transmitted light enters sensor 153 and reflected light enters sensor 163 . A bandpass filter 152 that passes only a 940 [nm] narrow band is provided on the optical path between the half mirror 130 and the sensor 153 . A band-pass filter 162 that passes only a narrow band of 850 [nm] is provided on the optical path between the half mirror 130 and the sensor 163 .

[Modification 3 of Embodiment 1]
FIG. 5 is a diagram for explaining an imaging device according to Modification 3 of Embodiment 1. FIG. An example of the configuration of an imaging device 10C, which is a third modified example of the imaging device 10, will be described with reference to FIG. The imaging device 10C has an image sensor and one ToF sensor. The imaging device 10C differs from the imaging device 10 in that it does not have the visible light reflecting dichroic film 141 and the half mirror 130 . In the description of the imaging device 10C, the same reference numerals are assigned to the same configurations as those of the imaging device 10, and the description may be omitted.

FIG. 5A is a front view of the imaging device 10C viewed from the front. The imaging device 10C has a substrate 180 . The substrate 180 includes an infrared cut filter section 181 and a bandpass filter section 182 . The infrared cut filter portion 181 cuts off infrared light and transmits visible light out of the light incident on the lens 110 . The band-pass filter section 182 transmits light having a predetermined wavelength out of the light incident on the lens 110, and blocks light other than light having a predetermined wavelength.

The imaging device 10C has a slide mechanism (not shown), and changes the relative positions of the lens 110, the housing 112, and the substrate 180 in the y-axis direction (slide direction DIR). The imaging device 10</b>C has a slide mechanism so that the light incident on the lens 110 enters either the infrared cut filter section 181 or the bandpass filter section 182 . The light incident on the infrared cut filter section 181 enters the RGB sensor, and the light incident on the bandpass filter section 182 enters the ToF sensor.

FIG. 5B is a plan view of the imaging device 10C. In the example shown in the figure, the slide mechanism is located at a position where the light incident on the lens 110 is incident on the infrared cut filter section 181 . As shown in the figure, by varying the relative positions of the lens 110 and the housing 112 and the substrate 180 along the slide direction DIR, the optical axis of the light incident on the lens 110 is shifted from the infrared cut filter section 181 to the infrared cut filter section 181. It is changed to the bandpass filter section 182 .

FIG. 5C is a side view of the imaging device 10C viewed from the side. In the same drawing, a cross section that is on the xz plane and crosses the infrared cut filter portion 181 is illustrated. As shown in the figure, the optical axis of the lens 110 and housing 112 coincides with that of the infrared cut filter section 181 provided on the substrate 180 . Also, although a cross section across the bandpass filter section 182 is not shown, similarly, the optical axis of the lens 110 and the housing 112 coincides with that of the bandpass filter section 182 provided on the substrate 180 .

[Modification 4 of Embodiment 1]
FIG. 6 is a diagram for explaining an imaging device according to Modification 4 of Embodiment 1. FIG. An example of the configuration of an imaging device 10D, which is a fourth modified example of the imaging device 10, will be described with reference to FIG. The imaging device 10D has an image sensor and one ToF sensor. The imaging device 10</b>D differs from the imaging device 10 in that it does not have the visible light reflecting dichroic film 141 and the half mirror 130 . Also, the imaging device 10D is similar to the imaging device 10C in that it does not have the visible light reflecting dichroic film 141 and the half mirror 130 . On the other hand, the imaging device 10D differs from the imaging device 10C in that it has a rotating mechanism instead of the sliding mechanism of the imaging device 10C. In the description of the imaging device 10D, the same reference numerals may be given to the same components as those of the imaging device 10C, and the description thereof may be omitted.

FIGS. 6A to 6C are all front views of the imaging device 10D viewed from the front. The imaging device 10D includes a substrate 190. As shown in FIG. The substrate 190 includes an infrared cut filter section 191 and a bandpass filter section 192 . The infrared cut filter portion 191 cuts off infrared light and transmits visible light out of the light incident on the lens 110 . The band-pass filter unit 192 transmits light having a predetermined wavelength out of the light incident on the lens 110, and blocks light other than light having a predetermined wavelength.

The imaging device 10D has a rotation mechanism (not shown) and rotates the substrate 190 around the rotation center C. As shown in FIG. By rotating the substrate 190 clockwise CW or counterclockwise CCW (not shown), the imaging device 10D shifts the optical axis of the light incident on the lens 110 to the infrared cut filter section 191 or the bandpass filter section. 192.

In FIG. 6A, the position where the light incident on the lens 110 is incident on the infrared cut filter portion 191 is shown, and in FIG. This is an example of a case where At the position shown in the figure, the light that has entered the lens 110 does not enter either the infrared cut filter section 191 or the bandpass filter section 192 . FIG. 6(C) is an example in which the substrate 190 is further rotated clockwise CW by 90 degrees from the position shown in FIG. 6(B). Light incident on the lens 110 at the position shown in the figure enters the bandpass filter section 192 .

In addition, by setting half of the substrate 190 as an infrared cut filter portion 191 and the other side as a band pass filter portion 192, the light incident on the lens 110 as shown in FIG. It is also possible to prevent a state in which the light enters neither the filter section 191 nor the bandpass filter section 192 .

[Summary of Embodiment 1]
According to the embodiment described above, the imaging device 10 includes the first laser diode (first light source) 121 to irradiate the object T with the first irradiation light, which is the light having the first wavelength, and the second irradiation light. By providing the laser diode (second light source) 122, the object T is irradiated with the second irradiation light, which is light having the second wavelength, and by providing the sensor (first detection unit) 153, the first irradiation light is applied to the target. The sensor (second detection unit) 163 is provided to detect the first reflected light that is the light irradiated and reflected by the object T, and the second irradiation light that is irradiated to the object T and the reflected light is detected. Detect reflected light. In addition, the imaging device 10 includes the half mirror (optical member) 130 to split the light incident on the lens 110 to the sensors 153 and 163 . In addition, the imaging device 10 includes a bandpass filter 152 on the optical path between the half mirror 130 and the sensor 153 to allow only the 940 [nm] narrow band to pass through the sensor 153. By providing a bandpass filter 162 on the optical path between, only the 850 [nm] narrow band is passed to the sensor 163 .

Therefore, according to the present embodiment, the imaging device 10 simultaneously captures the ranging data of the 850 [nm] ToF camera with the indoor use feature and the 940 [nm] ToF camera with the outdoor use feature. Therefore, data obtained under mutually weak conditions can be complemented. Therefore, the imaging device 10 can accurately measure the distance to the object even in a plurality of different environments.

Further, according to the embodiment described above, the half mirror 130 included in the imaging device 10 is provided on the optical path between the lens 110 and the sensors 153 and 163, and the first reflected light and the second reflected light are , pass through substantially the same optical axis between the lens 110 and the half mirror 130 . Therefore, according to this embodiment, it is not necessary to provide optical paths for the first reflected light and the second reflected light, and the imaging device 10 can be miniaturized.

Further, according to the embodiment described above, the imaging device 10 detects visible light by including the sensor (third detection unit) 143, and detects visible light by including the visible light reflecting dichroic film (visible light reflecting film) 141. , infrared light to sensors 153 and 163 and visible light to sensor 143 . Therefore, according to the imaging device 10, an RGB image and distance measurement information can be obtained. Therefore, the imaging device 10 can obtain a highly accurate 3D image by synthesizing the acquired RGB image and the ranging information.

Further, according to the embodiments described above, the visible light reflecting dichroic film 141 included in the imaging device 10 is provided on the optical path between the lens 110 and the half mirror 130 . That is, according to the imaging device 10, incident light is first divided into visible light and infrared light, and then the infrared light is further divided into two infrared lights. Therefore, according to this embodiment, it is possible to easily obtain an RGB image and distance measurement information.

Further, according to the embodiments described above, visible light passes through substantially the same optical axis as the first reflected light and the second reflected light between the lens 110 and the visible light reflecting dichroic film 141 in the imaging device 10. . Therefore, according to the imaging device 10, a highly accurate 3D image can be obtained in real time by synthesizing the RGB image obtained on the same optical axis and the ranging information.

[Effect of same optical axis]
Next, with reference to FIGS. 7 to 11, the effect of making the optical axes the same will be described in detail.

First, with reference to FIGS. 7 and 8, the effect when the number of pixels and the angle of view are the same or known will be described.
7A and 7B are diagrams for explaining the effect when the number of pixels and the angle of view of the RGB sensor and the ToF sensor are the same in the imaging device according to the first embodiment.
In the example shown in the figure, the imaging device 10 includes an RGB sensor and a ToF sensor having the same number of pixels and the same angle of view (image size). Specifically, the RGB sensor and the ToF sensor are both 640 pixels×480 pixels. Also, the RGB sensor and the ToF sensor have the same optical axis.

FIG. 7A is an example of RGB data acquired by an RGB sensor. FIG. 7B is an example of depth data acquired by the ToF sensor. Depth data includes distance information from the imaging device 10 to the object T, for example. Specifically, the depth data may include distance information corresponding to each of multiple pixels included in the two-dimensional image information. FIG. 7C is an example of 3D point cloud data generated based on the acquired RGB data and depth data.
In the present embodiment, since the number of pixels and angle of view of the RGB sensor and the ToF sensor are the same, the imaging device 10 performs processing for matching the number of pixels and angle of view of the acquired RGB data and depth data. don't need it. Furthermore, since the RGB sensor and the ToF sensor have the same optical axis, there is no parallax or FoV difference between the RGB data and the depth data. Therefore, the image pickup apparatus 10 does not need to perform parallax correction for adjusting the angle of view or restrict the peripheral angle of view by the FoV difference. Therefore, according to the present embodiment, the imaging device 10 can generate 3D point cloud data without correcting RGB data and depth data (that is, without processing).

8A and 8B are diagrams for explaining the effect when the number of pixels of the RGB sensor and the ToF sensor and the angle-of-view matching parameter are known in the imaging apparatus according to the first embodiment.
In the example shown in the figure, the number of pixels and the angle of view of the RGB sensor and the ToF sensor are different. Specifically, the number of pixels of the RGB sensor is 1280 pixels×960 pixels. Also, the number of pixels of the ToF sensor is 640 pixels×480 pixels. Also, the RGB sensor and the ToF sensor have the same optical axis.

FIG. 8A is an example of RGB data acquired by an RGB sensor. FIG. 8B is an example of RGB data trimmed according to the angle of view from which the depth data was acquired. FIG. 8C is an example of RGB data resized according to the number of pixels of depth data. FIG. 8D is an example of depth data acquired by the ToF sensor. FIG. 8E is an example of 3D point cloud data generated based on the processed RGB data and the acquired depth data.

As shown in FIGS. 8A to 8C, when the RGB sensor and the ToF sensor have different numbers of pixels and different angles of view, data with a large number of pixels are combined with data with a small number of pixels. Specifically, in this embodiment, since the number of pixels of the RGB sensor is larger than the number of pixels of the ToF sensor, the RGB data are first trimmed and then resized.

That is, even if the number of pixels and the angle of view of the RGB sensor and the ToF sensor are different, the ratio parameter for trimming the sensor side data with a wide angle of view to the narrower angle of view of the other sensor and the resizing ratio parameter for matching the number of pixels are set in advance. If this is known, the imaging apparatus 10 can easily match the number of pixels and the angle of view of the acquired RGB data and depth data. Further, since the RGB sensor and the ToF sensor have the same optical axis, there is no parallax or FoV difference. Therefore, the image pickup apparatus 10 does not need to perform parallax correction for adjusting the angle of view or restrict the peripheral angle of view by the FoV difference. Therefore, according to the present embodiment, the imaging device 10 can easily generate 3D point cloud data from RGB data and depth data.

Since the RGB sensor and the ToF sensor have the same optical axis, even if processing such as distortion correction, peripheral light falloff correction, and chromatic aberration correction due to the lens characteristics of the lens 110 is required, the imaging device 10 The same correction data can be applied to RGB data and depth data. That is, since it is not necessary to apply different correction data to the RGB data and the depth data, the imaging device 10 can easily correct the data.
Although there is a correlation between the characteristics of visible light and infrared light, if there is a difference, it may be necessary to perform correction according to the correlation.

Since the RGB sensor and the ToF sensor have the same optical axis, the imaging device 10 integrates the image frequency information obtained by the RGB sensor and the distance information of the subject obtained by the ToF sensor to achieve more accurate focusing. and edge detection.

Note that, according to the present embodiment, even when information cannot be sufficiently obtained from the RGB sensor in a dark time such as nighttime or in a shadowy dark area, the imaging device 10 can detect the information obtained from the ToF sensor. 3D data can be generated based on the distance information.

Next, an example of applying various corrections due to lens characteristics to a ToF camera will be described with reference to FIGS. 9 to 11. FIG. According to this embodiment, since the RGB sensor and the ToF sensor have the same optical axis, various corrections due to lens characteristics can be applied to the ToF camera. Furthermore, by using the distance information obtained by the ToF sensor together, it is possible to improve the accuracy of focusing by edge detection of the conventional RGB camera.
9 to 11, the imaging device 10 includes an RGB sensor and a ToF sensor having the same number of pixels and the same angle of view (image size). An example in the case of the optical axis will be described.

FIG. 9 is a diagram for explaining sharing of distortion correction values in the imaging apparatus according to the first embodiment. Sharing of the distortion correction value will be described with reference to FIG.
FIG. 9A is an example of RGB data acquired by an RGB sensor. The RGB data shown in the figure is barrel-distorted. FIG. 9B is an example of the case where the RGB data acquired by the RGB sensor is subjected to barrel distortion correction. FIG. 9C is an example of ToF data acquired by the ToF sensor. The ToF data shown in the figure is barrel distorted like the RGB data. FIG. 9D is an example of the case where the ToF data acquired by the ToF sensor is subjected to barrel distortion correction.
Note that ToF data is an example of depth data acquired by a ToF sensor.

Since the RGB sensor and the ToF sensor have the same optical axis, the RGB data and the ToF data are similarly barrel-distorted, as in the example shown in FIG. The calculated distortion correction data can be directly applied to distortion correction of ToF data. That is, according to this embodiment, RGB data and ToF data can share correction values. Therefore, according to this embodiment, correction can be easily performed.

FIG. 10 is a diagram for explaining sharing of peripheral light falloff correction data in the imaging apparatus according to the first embodiment. The sharing of peripheral light falloff correction data will be described with reference to FIG.
FIG. 10A is an example of RGB data acquired by an RGB sensor. The RGB data shown in FIG. FIG. 10B is an example of the RGB data obtained by the RGB sensor corrected for peripheral light falloff. In the RGB data shown in the figure, the amount of peripheral light is corrected. In FIG. 10C, the vertical axis represents the amount of light of each color of RGB in the AA′ section of the data shown in FIG. 10A, and the horizontal axis represents the horizontal coordinates (pixels) of the image. In FIG. 10D, the vertical axis represents the amount of light of each color of RGB in the AA′ section of the data shown in FIG. 10B, and the horizontal axis represents the horizontal coordinates (pixels) of the image.

As in the example shown in FIG. 10, according to the present embodiment, the RGB sensor and the ToF sensor have the same optical axis. The resulting peripheral light falloff correction data can be used as it is for the peripheral light falloff correction of the ToF data.
However, if there is a correlation but there is a difference between the peripheral light falloff characteristics of visible light and infrared light, it may be necessary to perform correction according to the correlation.

Here, in a conventional twin-lens camera, the RGB data and the ToF data have different peripheral light falloff correction data, so the amount of correction had to be changed according to the characteristics of each lens. According to this embodiment, the same or corresponding correction data can be applied to the RGB data and the ToF data, so the RGB data and the ToF data can be easily corrected.

11 is a diagram for explaining sharing of chromatic aberration correction data in the imaging apparatus according to the first embodiment; FIG. The sharing of chromatic aberration correction data will be described with reference to FIG.
FIG. 11A is an example of RGB data in which chromatic aberration occurs with red on the left edge and cyan on the right edge. FIG. 11B is an example of RGB data in which chromatic aberration occurs with cyan on the left edge and red on the right edge. The upper part of FIG. 11(C) is an example of the left and right edge waveforms of FIG. 11(A), and the lower part of FIG. 11(C) is an example of the left and right edge waveforms of FIG. 11(B). FIG. 11D is an example of RGB data after performing the chromatic aberration of magnification correction process. FIG. 11E is an example of ToF data after performing the magnification difference correction process.

The imaging apparatus 10 calculates chromatic aberration of magnification correction data based on the chromatic aberration of magnification information of the lens 110 obtained from the RGB data. The imaging apparatus 10 also applies the obtained magnification chromatic aberration correction data to the magnification difference correction of the image of the ToF data. In particular, the image capturing apparatus 10 uses the magnification chromatic aberration correction data of the Rch close to the near-infrared used in the ToF camera as it is for the magnification difference correction of the ToF data. Further, the imaging apparatus 10 may estimate and apply a correction amount of magnification difference in a correlated near-infrared region from Rch chromatic aberration correction data.

Also, the imaging device 10 detects an edge of the subject having a distance difference from the background from the distance information obtained from the ToF data. The imaging device 10 detects edges of a subject having luminance differences and frequency differences based on signals obtained from RGB data. The imaging apparatus 10 can use these together to improve the accuracy of edge detection and use them for camera focusing.

Further, the imaging apparatus 10 corrects the difference in magnification between the RGB data and the ToF data by using the Rch magnification chromatic aberration correction data for the ToF data as well. By correcting the magnification difference between the images of the RGB data and the ToF data, the imaging apparatus 10 can accurately superimpose the images when generating 3D data, and can suppress the occurrence of distance shifts at edges.

[Embodiment 2]
Next, Embodiment 2 will be described. The imaging device 10 according to the present embodiment includes a first laser diode (first light source) 121 to irradiate a first irradiation light, which is light having a first wavelength, and a sensor (first detection unit) 153. As a result, the first reflected light, which is the light reflected by the object, is detected. In addition, the imaging device 10 includes a second laser diode (second light source) 122 to irradiate the second irradiation light, which is light having a second wavelength different from the first wavelength, and detect the sensor (second detection unit). 163 detects the second reflected light, which is the light reflected by the object.
Here, since the first irradiation light and the first reflected light have different wavelengths from the second irradiation light and the second reflected light, they may interfere with each other. In the second embodiment, it is intended to suppress interference between light beams having different wavelengths.

In addition, in the description according to the second embodiment, an example in which the imaging device 10 described with reference to FIG. 2 is used will be described. However, the control method according to the second embodiment is not limited to the case where it is applied to the imaging device 10, and is similarly applicable to the imaging devices 10A to 10D.

FIG. 12 is a diagram for explaining interference of near-infrared light of two different wavelengths according to the second embodiment. Interference of near-infrared light with two different wavelengths will be described with reference to this figure.
In the same figure, the output of visible light (Rch, Gch, Bch) received by the RGB camera and infrared light (850 nm, 940 nm) received by the ToF camera is plotted with the horizontal axis representing the wavelength [nm] and the vertical axis representing the relative wavelength [nm]. shown as output. The figure also shows wavelengths that can be blocked by an IR cut filter (infrared cut filter 142), a 940 nm bandpass filter (bandpass filter 152), and an 850nm bandpass filter (bandpass filter 162). .

Bandpass filters of 850 [nm] and 940 [nm] used in general ToF cameras often have a bandwidth of about 150 [nm]. By applying the 940 nm band-pass filter and the 850 nm band-pass filter shown in FIG. 12, the influence of the visible light region can be removed.

However, when near-infrared light of 850 [nm] and 940 [nm] are emitted at the same time, interference between infrared light of other wavelengths cannot be completely eliminated. Specifically, in range A, near-infrared light of 850 [nm] and 940 [nm] interfere with each other.

In order to prevent such interference, it is effective to use a narrow-band band-pass filter that can sharply cut off within 100 [nm] instead of a general-purpose band-pass filter used in ToF cameras. However, a narrow-band bandpass filter that can sharply cut off light within 100 [nm] is expensive. Therefore, in the second embodiment, the imaging device 10 controls the light emission timing of the laser diode and the exposure timing of the sensor to suppress mutual wavelength interference.

FIG. 13 is a timing chart showing an example of operation periods of laser light irradiation and exposure according to the second embodiment. An example of the period during which the laser diode performs the light emission operation and the period during which the sensor performs the exposure operation will be described with reference to FIG. In the figure, the period during which the first laser diode 121 performs the light emission operation is shown as "940 nm LD light emission period". A “940 nm ToF exposure period” indicates a period during which the sensor 153 performs an exposure operation. A period during which the second laser diode 122 emits light is indicated as "850 nm LD light emission period". “850 nm ToF exposure period” indicates the period during which the sensor 163 performs the exposure operation.
The horizontal axis indicates time and the vertical axis indicates whether the emission or exposure is on or off. A high level indicates ON and a low level indicates OFF. Similarly, the frame pulse timing is shown with the horizontal axis representing time. Note that the ON or OFF period shown in the figure indicates the period during which the laser diode emits light or the sensor performs the exposure operation. Actions may be repeated. Specifically, in the actual ON period, the LD light emission period and the ToF exposure period each consist of a plurality of fine control pulses, and the LD light emission period and the ToF exposure period may not always be in the same phase.

FIG. 13A is a timing chart for explaining an example of the first interference prevention measure. First, the details of the first interference prevention measure will be described. In the first interference prevention measure, the light emission and exposure of the 940 [nm] ToF sensor and the light emission and exposure of the 850 [nm] ToF sensor are controlled based on the common frame pulse timing VD. The frame pulse timing VD has a period t11.

A period t12 during which the first laser diode (first light source) 121 emits the first irradiation light and the sensor (first detection unit) 153 detects the first reflected light is referred to as a first period. A period t13 during which the second laser diode (second light source) 122 emits the second irradiation light and the sensor (second detection unit) 163 detects the second reflected light is referred to as a second period.
The processing performed in the first period and the processing performed in the second period are performed in different frames. That is, the first period and the second period do not overlap.

Specifically, 850 [nm] laser diode emission and 850 [nm] ToF sensor exposure are performed in even-numbered frames, and 940 [nm] laser diode emission and 940 [nm] ToF sensor exposure are performed in odd-numbered frames. Thus, the operation timings of laser diode emission and ToF sensor exposure are alternately controlled. In other words, the first period and the second period alternately arrive at a predetermined cycle. Specifically, the first period is a period within an odd-numbered period of the predetermined period t11. Also, the second period is a period within an even-numbered period of the predetermined period t11.
Note that the first period and the second period may be interchanged. Specifically, 850 [nm] laser diode emission and 850 [nm] ToF sensor exposure are performed in odd-numbered frames, and 940 [nm] laser diode emission and 940 [nm] ToF sensor exposure are performed in even-numbered frames. may

As described above, in the first interference prevention measure, interference of near-infrared light is prevented by alternately controlling the operation timings of laser diode emission and ToF sensor exposure. According to the first interference prevention measure, there is an advantage that the laser diode emission timing control between two wavelengths and the exposure timing control of the ToF sensor can be managed by a common synchronization system. On the other hand, according to the first interference prevention measure, there is a problem that the ranging frame rate is halved. The second anti-interference measure solves the problem caused by the first anti-interference measure.

FIG. 13B is a timing chart for explaining an example of the second interference prevention measure. Next, details of the second anti-interference measure will be described. In the second interference prevention measure, control is performed based on the frame pulse timing VD1 for the 940 [nm] ToF sensor and the frame pulse timing VD2 for the 850 [nm] ToF sensor. The frame pulse timing VD1 has a period t21 and the frame pulse timing VD2 has a period t24. A period t21 is described as a first period, and a period t24 is described as a second period.

A period t22 during which the first laser diode (first light source) 121 emits the first irradiation light and the sensor (first detection unit) 153 detects the first reflected light is referred to as a first period. A period t25 during which the second laser diode (second light source) 122 emits the second irradiation light and the sensor (second detection unit) 163 detects the second reflected light is referred to as a second period.
In the second anti-interference measure, the first period is a period within the first period. Also, the second period is a period within the second cycle. In other words, the first period is based on the frame pulse timing VD1, and the second period is based on the frame pulse timing VD2. If the processing performed in the first period and the processing performed in the second period overlap at the same timing, light beams having different wavelengths interfere with each other. Therefore, the first period and the second period are controlled so as not to overlap.

Also, in the second anti-interference measure, the first period and the second period have different phases. Specifically, the frame pulse timing VD2 may be delayed by half a cycle from the frame pulse timing VD1. In other words, the phase difference between the first period and the second period may be half a period (180 degrees). Also, the period t21 as the first period and the period t24 as the second period may be the same period.

In the second interference prevention measure, the period during which the laser diode irradiation light is emitted and the reflected light is detected by the sensor may be less than or equal to half the frame pulse period. Specifically, the first period within the first period may be less than or equal to half the first period, and the second period within the second period may be less than or equal to half the second period.

As described above, in the second interference prevention measure, the 850 [nm] laser diode emission and 850 [nm] ToF sensor exposure and the 940 [nm] laser diode emission and 940 [nm] ToF sensor exposure are shifted by half a frame. Thereby, interference of near-infrared light of each wavelength is prevented.
According to the second interference prevention measure, unlike the first interference prevention measure, the ranging frame rate is not halved, and the ranging frame rate can be maintained. However, according to the second anti-interference measure, there is a demerit that the synchronizing circuit becomes complicated for both control and signal processing. According to the second interference prevention measure, if the laser diode emission period is lengthened for long distance measurement, the interval period is shortened and interference between two wavelengths cannot be avoided. If interference occurs due to the lengthening of the light emission period, it is effective to make adjustments such as lowering the frame rate.

As another embodiment, if a narrow-band bandpass filter that sharply attenuates at about ±40 [nm] of the center wavelength of each of 850 [nm] and 940 [nm] is used, mutual , the interference of near-infrared light with a wavelength of can be eliminated as much as possible.

[Summary of Embodiment 2]
According to the embodiment described above, the imaging device 10 includes the first laser diode (first light source) 121 to irradiate the object T with the first irradiation light, which is the light having the first wavelength, and the second irradiation light. By providing the laser diode (second light source) 122, the object T is irradiated with the second irradiation light, which is light having the second wavelength, and by providing the sensor (first detection unit) 153, the first irradiation light is applied to the target. The sensor (second detection unit) 163 is provided to detect the first reflected light that is the light irradiated and reflected by the object T, and the second irradiation light that is irradiated to the object T and the reflected light is detected. Detect reflected light. In the imaging device 10, a first period in which the first laser diode 121 emits the first irradiation light and the sensor 153 detects the first reflected light, and a second period in which the second laser diode 122 emits the second irradiation light and the sensor 163 detects the first reflected light. does not overlap with the second period for detecting the second reflected light.
Therefore, according to the present embodiment, the imaging device 10 can irradiate and receive reflected laser beams of different wavelengths without interfering with each other.

Further, according to the embodiments described above, in the imaging apparatus 10, the first period is a period within an odd-numbered period of the predetermined period, and the second period is a period of an even-numbered period within the predetermined period. be. Therefore, the imaging apparatus 10 can easily prevent interference of near-infrared light of each wavelength by controlling the operation timing of laser diode emission and ToF sensor exposure alternately in frames. In addition, since the imaging device 10 controls the operation timings of the laser diode emission and the ToF sensor exposure in alternate frames, even if the emission period and the exposure period become longer, they do not interfere with each other.

Further, according to the embodiment described above, in the imaging device 10, the first period is a period within the first period, and the second period is a period within the second period whose phase is different from that of the first period. be. In other words, according to the imaging apparatus 10, interference is prevented by performing timings for emitting and exposing light of different wavelengths based on respective frame pulse timings. Therefore, according to the present embodiment, the imaging device 10 can prevent interference between near-infrared light beams having different wavelengths without lowering the frame rate.

Further, according to the embodiments described above, in the imaging device 10, the first period and the second period are the same period, and the phase difference between the first period and the second period is a half period. Therefore, according to the present embodiment, the imaging device 10 emits and exposes light of different wavelengths at timings that are shifted by half a frame, thereby easily preventing interference between near-infrared light of different wavelengths. . In addition, the imaging device 10 emits and exposes light of different wavelengths at timings that are shifted by half a frame, thereby making it difficult for interference to occur even if the light emission period and exposure period of light having respective wavelengths become long. can be done.

Further, according to the embodiments described above, in the imaging apparatus 10, the first period within the first period is half or less than the first period, and the second period within the second period is half or less than the second period. is. Therefore, according to the present embodiment, since the first period and the second period do not overlap, it is possible to prevent interference between lights having different wavelengths.

Incidentally, according to the imaging device 10A described with reference to FIG. 3, simultaneous ranging of 850 [nm] and 940 [nm] cannot be performed, but synchronization of two laser diode emissions described in the second embodiment is possible. No control and synchronous control of the two ToF sensor exposures is required. Therefore, according to the imaging device 10A, the advantages of both wavelengths can be obtained without causing laser diode light interference between the two wavelengths.

[Embodiment 3]
Next, Embodiment 3 will be described. The imaging device 10 according to the present embodiment includes a first laser diode (first light source) 121 to irradiate a first irradiation light, which is light having a first wavelength, and a sensor (first detection unit) 153. As a result, the first reflected light, which is the light reflected by the object, is detected. The first wavelength is, for example, 940 [nm] and is used for outdoor distance measurement.
In addition, the imaging device 10 includes a second laser diode (second light source) 122 to irradiate the second irradiation light, which is light having a second wavelength different from the first wavelength, and detect the sensor (second detection unit). 163 detects the second reflected light, which is the light reflected by the object. The second wavelength is, for example, 850 [nm] and is used for indoor distance measurement.

14A and 14B are diagrams for explaining a problem to be solved by the imaging device according to the third embodiment. FIG. First, the problems to be solved in the third embodiment will be described with reference to the same figure.
A plurality of first laser diodes 121 and a plurality of second laser diodes 122 are arranged around the front surface of the lens 110 so as to surround the lens 110 . In the example shown in the figure, a first laser diode 121-1 and a first laser diode 121-2 are arranged as the first laser diode 121, and a second laser diode 122-1 is arranged as the second laser diode 122. , and a second laser diode 122 - 2 are arranged to surround the lens 110 .

The first laser diode 121 that emits light having a wavelength of 940 [nm] is used for outdoor long-distance use. The second laser diode 122, which emits light having a wavelength of 850 [nm], is used for short distance indoor use.
Here, the distance error due to the angle difference between the optical axis OA of the lens 110 and the laser diode irradiation axis (laser beam BM11-2 and laser beam BM12-2) becomes a problem. In order to suppress the influence of the distance error during short distance measurement, it is preferable to arrange the light source at a position as close to the optical axis OA as possible.

Especially when the object T exists at a short distance, the influence of the distance error is remarkable. Also, indoors, compared to outdoors, the distance to an object T existing at a short distance is often measured. Therefore, the second laser diode 122 used for short distances is preferably arranged as close to the optical axis OA as possible in order to reduce the influence of the distance error.
Therefore, the second laser diode (second light source) 122 for indoor use is positioned closer to the optical axis OA (near the outer circumference of the lens) than the first laser diode (first light source) 121 for outdoor use. is preferably arranged.

However, when the subject is large, a shadow of the laser diode irradiation is generated on the side of the subject, and a problem arises in that the area in which the range cannot be measured becomes large. In FIG. 14, the range AR1 and the range AR2 are shadowed by the laser diode irradiation, which causes a problem that distance measurement cannot be performed. In the third embodiment, it is intended to prevent the occurrence of such a range in which distance measurement cannot be performed.

FIG. 15 is a diagram illustrating an example of indoor distance measurement according to the third embodiment. The functional configuration and effects of the imaging device 10E according to the present embodiment will be described with reference to the same drawing. In the description of the imaging device 10E, the same reference numerals are assigned to the same functions as those of the imaging device 10, and the description thereof may be omitted.

As shown in the figure, the imaging device 10E includes a first laser diode 121 and a second laser diode 122 on a plane S intersecting the optical axis OA. That is, both the first laser diode (first light source) 121 and the second laser diode (second light source) 122 are arranged on a plane intersecting the optical axis OA. Also, the surface S is orthogonal to the optical axis OA. That is, the first laser diode (first light source) 121 and the second laser diode (second light source) 122 are both arranged on a plane perpendicular to the optical axis OA.

The imaging device 10E differs from the imaging device 10 in that in addition to the 850 [nm] laser diode provided at a position near the optical axis OA, an 850 [nm] laser diode is also provided at a position far from the optical axis. . Specifically, the imaging device 10E further includes a second laser diode 122-5 and a second laser diode 122-6.

The imaging device 10E can reduce the occurrence of irradiation shadows by providing 850 [nm] laser diodes not only at positions near the optical axis but also at positions far from the optical axis. Specifically, the second laser diode 122-5 irradiates the laser beam BM15 to suppress the generation of irradiation shadows in the range AR1, and the second laser diode 122-6 irradiates the laser beam BM16. suppresses the generation of irradiation shadows in the range AR2. Since the imaging device 10E can reduce the occurrence of irradiation shadows, it is possible to perform distance measurement on the sides of the subject as well.

Note that the imaging device 10E performs light emission control for each of the laser diodes arranged at two locations (that is, locations near and far from the optical axis). The imaging device 10E receives two types of distance data (distance data obtained by the second laser diode 122-1 and the second laser diode 122-2, and distance data obtained by the second laser diode 122-5 and the second laser diode 122-5) received by the ToF sensor. Optimized range data can be generated by combining the range data obtained by diode 122-6). Also, in order to prevent signal saturation in the ToF sensor, the imaging device 10E preferably weakens the emission intensity of the irradiation light emitted from each laser diode.

FIG. 16 is a diagram illustrating an example of outdoor distance measurement according to the third embodiment. An example of outdoor distance measurement of the imaging device 10E according to the present embodiment will be described with reference to FIG. In outdoor distance measurement, the imaging device 10E uses the first laser diode 121 . The first laser diode 121 is arranged outside the second laser diode 122 . Since the first laser diode 121 is used for middle- and long-range distance measurement, the distance to the object T is long, and the distance between the lens optical axis OA and the laser diode irradiation axis (laser beam BM21-2 and laser beam BM22-2) is large. Distance error effect due to angle difference is small. Also, since the distance to the object T is long, the shadow of the laser diode irradiation is also smaller than in the short distance.

In the imaging device 10E, the intensity of the signal received by the ToF sensor decreases as the distance to the subject increases, so it is preferable to increase the emission intensity of the first laser diode 121.

17 is a schematic diagram illustrating an example of the arrangement of light sources according to the third embodiment; FIG. An example of the arrangement of the first laser diode 121 and the second laser diode 122 will be described with reference to FIG.
The figure shows the positional relationship between the lens 110 and the plurality of laser diodes 120 when the imaging device 10E is viewed from the front.

The imaging device 10</b>E includes a plurality of first laser diodes 121 and a plurality of second laser diodes 122 . In one example shown in FIG. 17, four first laser diodes 121 and eight second laser diodes 122 are provided.
A plurality of first laser diodes 121 are arranged on the circumference of a first circle C1 centered on the optical axis OA. A plurality of second laser diodes 122 are arranged on the circumference of the second circle C2 and the third circle C3. The first circle C1 is a circle having a different radius than the second circle C2 and the third circle C3. The first circle C1, the second circle C2 and the third circle C3 are all concentric circles centered on the common optical axis OA.

The second laser diodes 122-1 to 122-4, which are a part of the plurality of second laser diodes 122, are arranged on the circumference of the second circle C2. Further, the second laser diodes 122-5 to 122-8, which are the other part of the plurality of second laser diodes 122, are arranged on the circumference of the third circle C3. The third circle C3 is a circle having a radius different from that of the first circle C1 and the second circle C2, and is centered on the optical axis OA between the first circle C1 and the second circle C2. Concentric circles.

18 is a schematic diagram illustrating an example of the arrangement of light sources according to a modification of the third embodiment; FIG. A modification of the arrangement of the first laser diode 121 and the second laser diode 122 will be described with reference to this figure.
17 in that the plurality of first laser diodes 121 and a portion of the second laser diodes 122 of the plurality of second laser diodes 122 are provided on the same circle. It differs from the example described with reference.
In the example shown in FIG. 17, the second laser diode 122 is the same as the example described with reference to FIG. 17, so the description may be omitted by assigning the same reference numerals. On the other hand, the first laser diode 121 is described as a first laser diode 121-nA (n is a natural number from 1 to 4) because its arrangement is different.

The first laser diodes 121-1A to 121-4A are arranged on the same circle as the second laser diodes 122-1 to 122-4. In other words, in the variant, the first circle C1 and the second circle C2 are the same circle.

The first laser diodes 121-1A to 121-4A are arranged at every angle A1. The angle A1 is 90 degrees. The second laser diodes 122-1 to 122-4 are arranged at angles A2. The angle A2 is 90 degrees.
Also, the first laser diodes 121-1A to 121-4A are arranged between the second laser diodes 122-1 to 122-4. The first laser diodes 121-1A to 121-4A and the second laser diodes 122-1 to 122-4 are arranged at angles A3. The angle A2 is 45 degrees.

[Summary of Embodiment 3]
According to the embodiment described above, the imaging device 10E includes the first laser diode (first light source) 121 to irradiate the object T with the first irradiation light, which is the light having the first wavelength, and the second irradiation light. By providing the laser diode (second light source) 122, the object T is irradiated with the second irradiation light, which is light having the second wavelength, and by providing the sensor (first detection unit) 153, the first irradiation light is applied to the target. The sensor (second detection unit) 163 is provided to detect the first reflected light that is the light irradiated and reflected by the object T, and the second irradiation light that is irradiated to the object T and the reflected light is detected. Detect reflected light. Also, in the imaging device 10 , the second laser diode 122 is arranged at a position closer to the optical axis OA than the first laser diode 121 . The second laser diode 122 is a light source used for indoor distance measurement.
Therefore, according to the present embodiment, when the imaging device 10E measures the distance to the object T placed at a short distance indoors, the angle difference between the optical axis OA of the lens 110 and the laser diode irradiation axis is can be made smaller. Therefore, the imaging device 10E can reduce the distance error due to the angular difference between the optical axis OA of the lens 110 and the laser diode irradiation axis.

Further, according to the embodiments described above, in the imaging device 10 , both the first laser diode 121 and the second laser diode 122 are arranged on the plane intersecting the optical axis OA of the lens 110 . Lights emitted from the first laser diode 121 and the second laser diode 122 are incident on the lens 110 along the same optical axis.
Therefore, according to this embodiment, sensor 153 and sensor 163 can share the same lens 110 .

Moreover, according to the embodiments described above, in the imaging device 10 , both the first laser diode 121 and the second laser diode 122 are arranged on the surface of the lens 110 perpendicular to the optical axis OA. Therefore, when the object T exists on the optical axis OA, the distance from the first laser diode 121 to the object T and the distance from the second laser diode 122 to the object T are the same. .
Therefore, according to the present embodiment, the imaging device 10E can measure the distance to the target object T with high accuracy.

Further, according to the embodiment described above, in the imaging device 10, the plurality of first laser diodes 121 are arranged on the circumference of the first circle C1 centered on the optical axis OA of the lens 110, and the plurality of The second laser diode 122 is arranged on the circumference of a second circle C2 which is a circle having a radius different from that of the first circle C1 and which is concentric with the optical axis OA of the lens 110 as the center. Therefore, when the object T exists on the optical axis OA, the distances from each of the plurality of first laser diodes 121 to the object T are the same, and the distances from each of the plurality of second laser diodes 122 to the object T are the same. are the same distance to each other.
Therefore, according to the present embodiment, the imaging device 10E can measure the distance to the target object T with high accuracy.

Further, according to the embodiment described above, in the imaging device 10, some of the plurality of second laser diodes 122 are arranged on the circumference of the second circle C2, and the plurality of second laser diodes 122 The other part is a third circle C3 which is a circle having a radius different from that of both the first circle C1 and the second circle C2 and which is concentric with the optical axis OA of the lens 110. placed on the circumference. That is, according to this embodiment, the second laser diode 122 for measuring the distance to the object T existing at a short distance indoors is arranged at a position close to the optical axis OA of the lens 110 and a position far from it. be done.
Therefore, according to the present embodiment, the imaging device 10E can suppress the influence of the shadow of the target object T caused by the laser beam and accurately measure the distance.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the present invention. You may combine suitably each embodiment which carried out.

DESCRIPTION OF SYMBOLS 10... Imaging device, 110... Lens, 120... Laser diode, 121... First laser diode, 122... Second laser diode, 130... Half mirror, 140... Image pickup unit, 141... Visible light reflecting dichroic film, 142... Red Outer cut filter 143 Sensor 144 Pixel 145 Reflective surface 150 Ranging section 152 Bandpass filter 153 Sensor 162 Bandpass filter 163 Sensor 172 Switchable bandpass filter , 173...sensor, T...object, BM...laser light, L...light, VL...visible light, IL...infrared light

Claims (5)

a first light source that emits first irradiation light that is light having a first wavelength;
a second light source that emits second irradiation light that is light having a second wavelength different from the first wavelength;
a first detection unit that detects the first reflected light, which is the reflected light of the object irradiated with the first irradiation light;
A second detection unit that detects the second reflected light that is the light reflected by the second irradiation light applied to the object,
a first period in which the first light source irradiates the first irradiation light and the first detection unit detects the first reflected light; and a period in which the second light source irradiates the second irradiation light and the second period An imaging device that does not overlap with a second period in which a detection unit detects the second reflected light. The imaging device according to claim 1, wherein the first period and the second period are periods that alternate in a predetermined cycle. The first period is a period within the first cycle,
The imaging device according to claim 1, wherein the second period is a period within a second period that is out of phase with the first period. The imaging device according to claim 3, wherein the phase difference between the first period and the second period is a half period. A first irradiation step of irradiating a first irradiation light that is light having a first wavelength;
a second irradiation step of irradiating a second irradiation light that is light having a second wavelength different from the first wavelength;
a first detection step of detecting the first reflected light, which is the reflected light of the object irradiated with the first irradiation light, by a first detection unit;
a second detection step of detecting the second reflected light, which is the reflected light of the object irradiated with the second irradiation light, by a second detection unit;
A first period for irradiating the first irradiation light in the first irradiation step and detecting the first reflected light in the first detection step, and irradiating the second irradiation light in the second irradiation step, An imaging method that does not overlap with a second period in which the second reflected light is detected by a second detection step.

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