JP2023091381A - Apparatus and method for manufacturing gallium nitride layer - Google Patents

Abstract

To prevent supply line for supplying gallium trichloride gas from being blocked.SOLUTION: A formation device 20 includes: a first space 211 arranging metal gallium 220; a second space 212 positioned between the first space 211 and a supply line 310; a first guiding line 231 for guiding chlorine gas to the first space 211; and a second guiding line 232 for guiding the chlorine gas to the second space 212. The second guiding line 232 guides chlorine gas more than the amount of chlorine gas necessary for forming gallium monochloride gas formed by guiding the chlorine gas from the first guiding line 231 into gallium trichloride gas.SELECTED DRAWING: Figure 1

Description

The present invention relates to a GaN layer manufacturing apparatus and a GaN layer manufacturing method for growing a GaN layer on a seed substrate made of gallium nitride (hereinafter also simply referred to as GaN).

2. Description of the Related Art Conventionally, a GaN layer manufacturing apparatus and a manufacturing method thereof have been proposed for growing a GaN layer on a seed substrate made of GaN using a hydride vapor layer epitaxy method (see, for example, Patent Document 1). Specifically, this manufacturing apparatus includes a growth apparatus in which a seed substrate is arranged to grow a GaN layer, and a generation apparatus for generating gallium trichloride gas as a raw material gas for growing the GaN layer. . In addition, in this manufacturing apparatus, a first supply pipe that connects the growth apparatus and the generation apparatus to supply the gas generated by the generation apparatus to the growth apparatus, and an ammonia gas that serves as a raw material gas for growing the GaN layer. and a second supply line feeding the device.

The growth apparatus has a growth vessel in which the seed substrate is placed, and is configured such that gallium trichloride gas generated by the generation apparatus is supplied into the growth vessel through a first supply pipe. Further, the growth apparatus is configured such that ammonia gas is supplied into the growth container through the second supply pipe.

The generator comprises a generator vessel in which metallic gallium is placed. The production container is configured to include a first space in which metallic gallium is placed and a second space communicating with the first space. The production vessel is also provided with a first guide pipe for guiding the chlorine gas to the first space and a second guide pipe for guiding the chlorine gas to the second space.

In the generation device, when chlorine gas is introduced from the first induction pipe, metal gallium reacts with chlorine gas to generate gallium monochloride gas, as in the reaction of Chemical Formula 1 below.

(Chemical Formula 1) Ga+1/2Cl ₂ →GaCl
In addition, in the generation device, when chlorine gas is guided from the second induction pipe to the generation container, gallium monochloride gas and chlorine gas react to generate gallium trichloride gas as shown in chemical formula 2 below. .

(Formula 2) GaCl+Cl ₂ →GaCl ₃
When gallium trichloride gas is generated by the generation device, the generation device is set so that the temperature of the first space is about 800 to 900°C, and the temperature of the second space on the side of the first supply pipe is about 150°C. is heated to Also, the first supply pipe is heated to about 150°C.

In such a GaN layer manufacturing apparatus, gallium trichloride gas and ammonia gas are supplied onto the seed substrate to grow a GaN layer by the reaction of chemical formula 3 below.

(Chemical Formula 3) GaCl ₃ +NH ₃ →GaN+3HCl

Japanese Patent No. 5787324

By the way, gallium monochloride has a higher boiling point than gallium trichloride and is a material that solidifies easily. For this reason, when gallium trichloride gas is supplied into the growth apparatus through the first supply pipe, if gallium monochloride gas remains, gallium monochloride gas may solidify in the first supply pipe. There is a possibility that the inside of the first supply pipe will be blocked.

SUMMARY OF THE INVENTION In view of the above points, it is an object of the present invention to provide a GaN layer manufacturing apparatus and a GaN layer manufacturing method capable of suppressing clogging of a supply pipe for supplying gallium trichloride gas.

Claim 1 for achieving the above object is a GaN layer manufacturing apparatus for growing a GaN layer (122) by supplying a gallium-based gas and an ammonia-based gas onto a seed substrate (121) made of GaN. a growth apparatus (10) having a cylindrical growth container (100) in which a GaN layer is grown in a hollow portion (101a) constituting a reaction chamber; A pedestal (120) on which a seed substrate to be grown is placed, a generation device (20) for generating gallium trichloride gas as a gallium-based gas, and a generation device and a growth device are connected to connect three a supply pipe (310) for supplying gallium chloride gas to the growth apparatus, wherein the generator is located in a first space (211) in which metallic gallium (220) is arranged and between the first space and the supply pipe; a second space (212), a first guide pipe (231) for guiding chlorine gas to the first space, and a second guide pipe (232) for guiding chlorine gas to the second space; The second induction pipe is arranged so that chlorine gas is introduced in an amount larger than the amount of chlorine gas required to convert gallium monochloride gas generated by introducing chlorine gas from the first induction pipe into gallium trichloride gas. It has become.

According to this, it is possible to suppress the gallium monochloride gas from remaining, and to grow the GaN layer while suppressing clogging of the supply pipe due to solidification of the gallium monochloride gas.

Further, claim 4 is a method for producing a GaN layer using the GaN layer production apparatus according to claim 1, comprising: preparing the GaN layer production apparatus according to claim 1; generating the gas to grow the GaN layer, and generating the gallium trichloride gas, inducing the chlorine gas from the first induction pipe to react the metal gallium and the chlorine gas to generate the gallium monochloride gas and introducing chlorine gas from the second induction pipe, reacting gallium monochloride gas and chlorine gas to produce gallium trichloride gas, and introducing chlorine gas from the second induction pipe. The inducing induces more chlorine gas than is required to convert gallium monochloride gas to gallium trichloride gas.

According to this, it is possible to suppress the gallium monochloride gas from remaining, and to grow the GaN layer while suppressing clogging of the supply pipe due to solidification of the gallium monochloride gas.

It should be noted that the reference numerals in parentheses attached to each component etc. indicate an example of the correspondence relationship between the component etc. and specific components etc. described in the embodiments described later.

It is a cross-sectional schematic diagram of the GaN layer manufacturing apparatus in 1st Embodiment. It is a cross-sectional schematic diagram of the GaN layer manufacturing apparatus in 2nd Embodiment. It is a cross-sectional schematic diagram of the GaN layer manufacturing apparatus in 3rd Embodiment.

An embodiment of the present invention will be described below with reference to the drawings. In addition, in each of the following embodiments, portions that are the same or equivalent to each other will be described with the same reference numerals.

(First embodiment)
A first embodiment will be described with reference to the drawings. First, the configuration of the GaN layer manufacturing apparatus will be described with reference to FIG. The GaN layer manufacturing apparatus shown in FIG. 1 is installed with the vertical direction of the page of FIG.

As shown in FIG. 1, the GaN layer manufacturing apparatus includes a growth apparatus 10 for growing a GaN layer 122 and a generation apparatus 20 for generating gallium trichloride gas as a raw material gas for growing the GaN layer 122. there is The GaN layer manufacturing apparatus also includes first to third supply pipes 310 to 330 and the like for supplying various gases for growing the GaN layer 122 to the growth apparatus 10 .

The growth apparatus 10 has a growth container 100, a heating container 110, a pedestal 120, a shaft 131, a rotational displacement mechanism 132, a heating device 140, and the like.

The growth vessel 100 includes a tubular portion 101 having a hollow portion 101a that constitutes a reaction chamber, and a first lid portion 102 and a second lid portion 103 that are provided in the tubular portion 101 and close the hollow portion 101a. have. The cylindrical portion 101 is made of quartz glass or the like, and has a cylindrical shape in this embodiment. The first lid portion 102 and the second lid portion 103 are made of SUS or the like. It is provided at the end of the portion 101 that is the ground side. The growth container 100 has a structure in which other components for growing the GaN layer 122 are arranged in the hollow portion 101a, and the pressure in the hollow portion 101a can be reduced by evacuating.

The growth container 100 is also provided with first to third supply pipes 310 to 330 for supplying various gases for growing the GaN layer 122 . In this embodiment, the first lid portion 102 is provided with first to third supply pipes 310 to 330 . Specifically, the first lid portion 102 has a first supply pipe for supplying gallium trichloride gas into the growth vessel 100 as a gallium-based gas for growing the GaN layer 122 produced by the production apparatus 20. 310 are provided. The first lid portion 102 is provided with a second supply pipe 320 for supplying ammonia gas into the growth vessel 100 as an ammonia-based gas for growing the GaN layer 122 together with gallium trichloride gas. The first lid portion 102 is provided with a third supply pipe 330 for supplying nitrogen gas as a carrier gas into the growth container 100 . Note that, in the present embodiment, chlorine gas can be supplied to the first supply pipe 310 as described later. For this reason, the first supply pipe 310 is composed of, for example, a pipe coated with corrosion-resistant fluorine.

One end of each of the first to third supply pipes 310 to 330 of this embodiment is positioned inside the heating vessel 110, which will be described later. However, one end of the third supply pipe 330 is located closer to the first lid portion 102 than one ends of the first supply pipe 310 and the second supply pipe 320 are. In other words, in the first to third supply pipes 310 to 330, the gas supplied from the first and second supply pipes 310 and 320 is directed downward by the gas supplied from the third supply pipe 330 (that is, the gas supplied from the third supply pipe 330). It is arranged so that it can easily flow to the substrate 121 side).

The first supply pipe 310 has one end on the growth device 10 side and the other end on the opposite side to the generation device 20 . That is, the first supply pipe 310 is arranged to connect the growth device 10 and the generation device 20 . In addition, the first supply pipe 310 has a smaller cross-sectional area than the production container 200, which will be described later, with the gas flow direction as the normal direction. Although not shown, the second supply pipe 320 and the third supply pipe 330 are connected to respective gas supply sources at the other end opposite to the one end of the growth apparatus 10 .

Furthermore, the growth vessel 100 is provided with an exhaust port 104 for exhausting exhaust gas containing unreacted gas that has not contributed to the growth of the GaN layer 122 . In this embodiment, a discharge port 104 is provided in a portion of the growth container 100 on the second lid portion 103 side.

The heating vessel 110 is made of, for example, alumina, zirconia, pyrolytic carbon, graphite, or the like, and is formed in a cylindrical shape having a hollow portion 110a. The heating container 110 is provided in the first lid portion 102 so that various gases are supplied from the first to third supply pipes 310 to 330 into the hollow portion 110a.

The pedestal 120 is a member on which a seed substrate 121 made of GaN for growing a GaN layer 122 is arranged, and is arranged below the heating vessel 110 . The pedestal 120 is made of a material that is difficult to thermally etch, such as graphite whose surface is coated with a refractory metal carbide such as PbN, SiC, TaC, or NbC. A seed substrate 121 is attached to one surface 120a of the pedestal 120 located on the side of the first to third supply pipes 310 to 330, and a GaN layer 122 is grown on the surface of the seed substrate 121. As shown in FIG.

In this embodiment, as will be described later, the GaN layer 122 is grown by supplying gallium trichloride gas and ammonia gas onto the seed substrate 121 . Here, when gallium trichloride gas is used to grow the GaN layer 122, the GaN layer 122 grows easily when the growth surface of the seed substrate 121 is a nitrogen surface, and the growth surface of the seed substrate 121 is a gallium surface. It is reported that it is difficult to grow if Therefore, in this embodiment, the seed substrate 121 is arranged so that the growth surface of the GaN layer 122 is the nitrogen surface. In other words, the seed substrate 121 is arranged such that the surface opposite to the pedestal 120 is the nitrogen surface.

Moreover, the pedestal 120 has a shaft 131 connected to the surface opposite to the surface on which the seed substrate 121 is arranged. The pedestal 120 is rotated in accordance with the rotation of the shaft 131, and displaced together with the shaft 131 along the axial direction of the growth container 100 (that is, the vertical direction in FIG. 1). It is The shaft 131, like the base 120, is made of a material that is difficult to thermally etch, such as graphite whose surface is coated with a refractory metal carbide such as PbN, SiC, TaC, or NbC.

The rotation displacement mechanism 132 is a member that includes gears, a motor, etc., and is connected to the shaft 131 to rotate the shaft 131 and displace the shaft 131 . When the shaft 131 is displaced, the rotary displacement mechanism 132 adjusts the temperature of the growth surface of the GaN layer 122 to a temperature suitable for the growth of the GaN layer 122 as the GaN layer 122 grows. Substrate 121) is displaced. In addition, the rotation displacement mechanism 132 of the present embodiment rotates the shaft 131 so that the pedestal 120 rotates at 200 rotations or more per minute, although it is not particularly limited when the GaN layer 122 is grown. Let

The heating device 140 heats the inside of the heating container 110 and the growth container 100 , and is configured by, for example, a heating coil such as an induction heating coil or a direct heating coil, and surrounds the growth container 100 . are placed. When the GaN layer 122 is grown, the heating device 140 of the present embodiment is driven so that the temperature around the seed substrate 121 is about 1000 to 1300° C. and the temperature inside the heating vessel 110 is 700° C. or higher. be.

The production device 20 has a production container 200, a heating device 240, and the like. The production container 200 has a tubular portion 201 having a hollow portion 201a, and a first lid portion 202 and a second lid portion 203 provided in the tubular portion 201 to close the hollow portion 201a. The cylindrical portion 201 is made of quartz glass or the like, and has a cylindrical shape in this embodiment. The first lid portion 202 and the second lid portion 203 are made of SUS or the like. The first lid portion 202 is provided at the end portion of the cylindrical portion 201 opposite to the side to which the first supply pipe 310 is connected, and the second lid portion 203 is provided at the first supply pipe portion of the cylindrical portion 201 . 310 is provided at the end to which it is connected. Note that, similarly to the growth vessel 100, the generation vessel 200 has a structure in which the pressure in the hollow portion 201a can be reduced by evacuating.

The production container 200 is provided with a partition wall 213 that partitions the hollow portion 201a into a first space 211 on the first lid portion 202 side and a second space 212 on the second lid portion 203 side. However, this partition wall 213 is formed so as to maintain communication between the first space 211 and the second space 212 . In other words, the partition wall 213 is provided so as not to partition the first space 211 and the second space 212 completely.

Metal gallium 220 is arranged in the first space 211 . In this embodiment, the second space 212 is provided with a partition wall 214 for increasing the wall surfaces that come into contact with the gallium monochloride gas and chlorine gas generated in the first space 211, as will be described later.

In addition, the production container 200 is provided with a first guide pipe 231 and a second guide pipe 232 for guiding the chlorine gas into the production container 200 . In this embodiment, the first guide pipe 231 is provided in the first lid portion 202 so as to guide the chlorine gas to the first space 211 . A second guiding pipe 232 is provided in the tubular portion 201 so as to guide the chlorine gas to the second space 212 . In addition, in the present embodiment, nitrogen gas as a carrier gas is also guided into the production container 200 from the first guide pipe 231 and the second guide pipe 232 .

The heating device 240 heats the inside of the production container 200 , and is composed of, for example, a resistance heater or the like, and is arranged around the production container 200 . In this embodiment, the heating device 240 is arranged so as to surround the portion forming the first space 211 of the production container 200 . When the GaN layer 122 is grown, the heating device 240 sets the temperature of the first space 211 to about 800 to 900° C. It is driven so as to reach about 150° C. by heat transfer. In addition, since the second space 212 of the present embodiment is heated by heat transfer from the first space 211, the temperature gradually decreases from the first space 211 side toward the second lid portion 203 side. slope.

The generating device 20 is provided with the other end of the first supply pipe 310 on the second cover 203 . Although not shown, a heating device is also arranged around the first supply pipe 310 . The first supply pipe 310 is heated to, for example, about 150° C. when the GaN layer 122 is grown.

The above is the configuration of the GaN layer manufacturing apparatus according to this embodiment. Next, a method for manufacturing the GaN layer 122 using the GaN layer manufacturing apparatus will be described.

First, the GaN layer manufacturing apparatus is prepared, and the seed substrate 121 is placed on one surface 120 a of the base 120 . In this embodiment, as described above, the seed substrate 121 is arranged such that the growth surface of the GaN layer 122 is the nitrogen surface. Then, the rotational displacement mechanism 132 rotates the pedestal 120 via the shaft 131 and adjusts the position of the pedestal 120 . In addition, when the GaN layer 122 is grown, the height of the pedestal is adjusted according to the growth rate of the GaN layer 122 . Thereby, the height of the growth surface of the GaN layer is kept substantially constant, and the temperature distribution of the growth surface temperature can be effectively controlled.

Next, each heating device 140, 240 is driven. Specifically, the heating device 140 is driven so that the temperature around the seed substrate 121 placed in the growth container 100 is about 1000 to 1300° C. and the temperature inside the heating container 110 is 700° C. or higher. In addition, the heating device 240 is driven so that the temperature of the first space 211 in the production container 200 is about 800 to 900.degree. Furthermore, although not shown, the heating device arranged around the first supply pipe 310 is driven so that the temperature of the first supply pipe 310 is also about 150°C.

Subsequently, chlorine gas and nitrogen gas as a carrier gas are guided into the generator 20 from the first guide pipe 231 and the second guide pipe 232 . Accordingly, in the first space 211, the metal gallium 220 reacts with the chlorine gas to generate gallium monochloride gas, as shown in Chemical Formula 1 above. In addition, as the gallium monochloride gas flows into the second space 212, the gallium monochloride gas reacts with the chlorine gas guided into the second space 212 to form gallium trichloride, as shown in Chemical Formula 2 above. A gas is produced. Gallium trichloride gas is then supplied to the growth apparatus 10 through the first supply pipe 310 . In this case, a partition wall 214 is provided in the second space 212 of this embodiment. Therefore, the gas guided to the second space 212 easily collides with the partition wall 214 as a high-temperature portion, and the flow distance becomes longer. Therefore, gallium monochloride gas can be prevented from remaining without reacting with chlorine gas.

At this time, in this embodiment, from the second guide pipe 232, an amount of chlorine gas greater than or equal to the amount required to convert all the gallium monochloride generated in the first space 211 into gallium trichloride is guided. For example, when 100 sccm of chlorine gas is guided from the first guidance pipe 231 , 200 sccm or more of chlorine gas is guided from the second guidance pipe 232 . Thereby, gallium monochloride gas can be prevented from remaining in the second space 212 . In addition, about 1 slm, for example, of the nitrogen gas as the carrier gas guided from the first guide pipe 231 and the second guide pipe 232 is guided.

Ammonia gas is supplied from the second supply pipe 320 to the growth container 100 , and nitrogen gas is supplied to the growth container 100 from the third supply pipe 330 . As a result, ammonia gas and gallium trichloride gas flow and are supplied to seed substrate 121 , and GaN layer 122 is grown on the surface of seed substrate 121 . The supply of ammonia gas is preferably started after the heating device 140 is driven and when the ambient temperature of the seed substrate 121 is 500° C. or less in order to prevent nitrogen escape. Further, the ammonia gas is supplied at, for example, about 1 to 5 slm. Nitrogen gas as a carrier gas is supplied at, for example, about 1 to 10 slm.

According to the present embodiment described above, in the generation device 20, the amount of gallium monochloride gas generated in the first space 211 is all the gallium trichloride gas from the second guide pipe 232. Induce chlorine gas. Therefore, it is possible to suppress the gallium monochloride gas from remaining, and it is possible to suppress clogging of the first supply pipe 310 due to solidification of the gallium monochloride gas.

(Second embodiment)
A second embodiment will be described. In this embodiment, a third guide pipe is added to the generation device 20 with respect to the first embodiment. Others are the same as those of the first embodiment, so description thereof is omitted here.

In this embodiment, as shown in FIG. 2, the generator 20 is provided with a third guide pipe 233 . Specifically, the third guide pipe 233 is provided in the tubular portion 201 so as to guide the chlorine gas and the nitrogen gas to the second space 212 . More specifically, the third guide pipe 233 is provided closer to the second lid portion 203 than the second guide pipe 232, and guides the chlorine gas to the vicinity of the connecting portion between the generator 20 and the first supply pipe 310. placed so that it is possible.

The above is the configuration of the GaN layer manufacturing apparatus according to this embodiment. Next, a method for manufacturing the GaN layer 122 using the GaN layer manufacturing apparatus will be described.

In the present embodiment, chlorine gas is also guided from the third lead pipe 233 when gallium trichloride gas is generated by the generator 20 . For example, when 100 sccm of chlorine gas is guided from the first induction pipe 231 , 200 sccm or more of chlorine gas is guided from the second induction pipe 232 and about 20 sccm of chlorine gas is guided from the third induction pipe 233 . This can further suppress the gallium monochloride gas from remaining in the second space 212 . That is, the introduction of gallium monochloride gas into first supply pipe 310 can be further suppressed.

According to the present embodiment described above, the generator 20 guides chlorine gas from the second lead pipe 232 in an amount equal to or greater than the amount required to convert all the gallium monochloride gas into gallium trichloride gas. Therefore, the same effects as those of the first embodiment can be obtained.

(1) In this embodiment, chlorine gas is also guided from the third induction pipe 233 . Therefore, gallium monochloride gas can be further suppressed from being guided into first supply pipe 310, and clogging of first supply pipe 310 can be further suppressed.

(Third Embodiment)
A third embodiment will be described. This embodiment is different from the first embodiment in that the growth apparatus 10 is provided with a fourth supply pipe. Others are the same as those of the first embodiment, so description thereof is omitted here.

First, in the GaN layer manufacturing apparatus as described above, a large amount of chlorine gas is guided to the second space 212 of the generating apparatus 20 so that clogging of the first supply pipe 310 can be suppressed. However, by introducing a large amount of chlorine gas to the second space 212 of the generator 20 , chlorine gas can also be supplied from the generator 20 to the growth apparatus 10 . In this case, chlorine gas may function as an etching gas and etch the GaN layer 122 .

For this reason, in this embodiment, as shown in FIG. 3, a fourth supply pipe 340 for supplying hydrogen gas to the growth apparatus 10 is provided. Specifically, one end of the fourth supply pipe 340 is positioned inside the heating vessel 110 and is positioned substantially at the same position as the third supply pipe 330, and the other end is connected to a gas supply source (not shown). It is

The above is the configuration of the GaN layer manufacturing apparatus according to this embodiment. Next, a method for manufacturing the GaN layer 122 using the GaN layer manufacturing apparatus will be described.

In this embodiment, when growing the GaN layer 122 , hydrogen gas is guided into the growth apparatus 10 from the fourth supply pipe 340 . Accordingly, the chlorine gas that can be supplied from the first supply pipe 310 reacts with the hydrogen gas as shown in Chemical Formula 4 below to become hydrogen chloride gas, which has a weaker etching property than the chlorine gas.

(Formula 4) 1/2Cl ₂ +H ₂ →HCl
Therefore, etching of the GaN layer 122 by the chlorine gas that can be supplied from the first supply pipe 310 (that is, the generator 20) can be suppressed.

When chlorine gas is reacted with hydrogen gas, it is preferable that the reaction be carried out in a portion where the ambient temperature is 700° C. or higher. Therefore, in this embodiment, the temperature inside the heating container 110 is set to 700° C. or higher. Further, the hydrogen gas supplied from the fourth supply pipe 340 may be about 50 to 500 sccm when, for example, 200 sccm of chlorine gas is guided from the second guide pipe 232 to the second space 212 .

Furthermore, by supplying hydrogen gas into the growth apparatus 10, the hydrogen gas also reacts with the gallium trichloride gas supplied from the first supply pipe 310 to produce gallium monochloride gas, as shown in chemical formula 5 below. Generate.

(Formula 5) GaCl ₃ +H ₂ →GaCl+2HCl
Therefore, in the present embodiment, the ammonia gas and the gallium monochloride gas flow and are supplied to the seed substrate 121, so that the GaN layer 122 is grown on the surface of the seed substrate 121 as shown in chemical formula 6 below. be done.

(Chemical Formula 6) GaCl+NH ₃ →GaN+HCl+H ₂
Here, it is reported that when gallium monochloride gas is used to grow the GaN layer 122, the GaN layer 122 is easily grown regardless of whether the growth surface of the seed substrate 121 is a nitrogen surface or a gallium surface. It is Therefore, in this embodiment, a desired surface of the seed substrate 121 can be selected as the growth surface of the GaN layer 122 .

According to the present embodiment described above, the generator 20 guides chlorine gas from the second lead pipe 232 in an amount equal to or greater than the amount required to convert all the gallium monochloride gas into gallium trichloride gas. Therefore, the same effects as those of the first embodiment can be obtained.

(1) In this embodiment, hydrogen gas is supplied into the growth apparatus 10 . Therefore, the chlorine gas that can be supplied from the first supply pipe 310 into the growth apparatus 10 can be prevented from reaching the GaN layer 122 as it is, and the GaN layer 122 can be prevented from being etched. Further, the gallium trichloride gas supplied from the first supply pipe 310 into the growth apparatus 10 reacts with hydrogen gas to become gallium monochloride gas, and the GaN layer 122 is grown by the reaction between gallium monochloride and ammonia gas. be done. Therefore, a desired surface can be selected as the growth surface of the GaN layer 122 .

(Other embodiments)
Although the present disclosure has been described with reference to embodiments, it is understood that the present disclosure is not limited to such embodiments or structures. The present disclosure also includes various modifications and modifications within the equivalent range. In addition, various combinations and configurations, as well as other combinations and configurations, including single elements, more, or less, are within the scope and spirit of this disclosure.

In each of the embodiments described above, the configuration of the growth apparatus 10 may be changed as appropriate. For example, in each of the above-described embodiments, an example in which the rotation displacement mechanism 132 that rotates and displaces the pedestal 120 is provided has been described, but the pedestal 120 may only be rotated and not displaced. Further, the discharge port 104 may be arranged on the first lid portion 102 side of the growth container 100 .

Further, in each of the above embodiments, the partition wall 214 may not be provided in the second space 212 .
Further, each of the above embodiments can be combined. For example, the second embodiment described above may be combined with the third embodiment described above, and the third guide pipe 233 may be provided.

REFERENCE SIGNS LIST 10 growth apparatus 20 generation apparatus 101a hollow portion 100 growth vessel 120 pedestal 121 seed substrate 122 GaN layer 211 first space 212 second space 220 metal gallium 231 first guide pipe 232 second guide pipe 310 supply pipe

Claims (4)

A gallium nitride layer manufacturing apparatus for growing a gallium nitride layer (122) by supplying a gallium-based gas and an ammonia-based gas onto a seed substrate (121) made of gallium nitride,
a growth apparatus (10) having a cylindrical growth container (100) in which the gallium nitride layer is grown in a hollow portion (101a) constituting a reaction chamber;
a pedestal (120) disposed within the hollow portion of the growth vessel and on which the seed substrate on which the gallium nitride layer is to be grown is disposed;
a generation device (20) for generating gallium trichloride gas as the gallium-based gas;
a supply pipe (310) connecting the generation device and the growth device and supplying the gallium trichloride gas generated in the generation device to the growth device;
The generator includes a first space (211) in which metal gallium (220) is placed, a second space (212) located between the first space and the supply pipe, and chlorine gas in the first space. and a second induction pipe (232) for guiding chlorine gas to the second space,
The second induction pipe is provided with chlorine gas in an amount larger than the amount of chlorine gas required to convert the gallium monochloride gas generated by guiding the chlorine gas from the first induction pipe into the gallium trichloride gas. gallium nitride layer manufacturing apparatus adapted to induce a The generating device is provided with a third supply pipe (233) for guiding chlorine gas to the second space at a portion closer to the supply pipe than a portion to which chlorine gas is guided from the second guide pipe. The gallium nitride layer manufacturing apparatus according to claim 1. 3. The gallium nitride layer manufacturing apparatus according to claim 1, wherein the growth apparatus is provided with a supply pipe (340) for supplying hydrogen gas. A gallium nitride layer manufacturing method for growing a gallium nitride layer (122) by supplying a gallium-based gas and an ammonia-based gas onto a seed substrate (121) made of gallium nitride, comprising:
a growth apparatus (10) having a cylindrical growth container (100) in which the gallium nitride layer is grown in a hollow portion (101a) constituting a reaction chamber;
a pedestal (120) disposed within the hollow portion of the growth vessel and on which the seed substrate on which the gallium nitride layer is to be grown is disposed;
a generation device (20) for generating gallium trichloride gas as the gallium-based gas;
a supply pipe (310) connecting the generation device and the growth device and supplying the gallium trichloride gas generated in the generation device to the growth device;
The generator includes a first space (211) in which metal gallium (220) is placed, a second space (212) located between the first space and the supply pipe, and chlorine gas in the first space. and a second guide pipe (232) for guiding chlorine gas into the second space;
growing the gallium nitride layer by generating the gallium trichloride gas in the generator;
In generating the gallium trichloride gas, the chlorine gas is guided from the first induction pipe to react the metal gallium and the chlorine gas to generate gallium monochloride gas; deriving the chlorine gas from and reacting the gallium monochloride gas with the chlorine gas to produce the gallium trichloride gas;
A method for producing a gallium nitride layer, wherein the chlorine gas is guided through the second induction pipe so that chlorine gas is introduced in an amount larger than the amount of chlorine gas required to convert the gallium monochloride gas into the gallium trichloride gas. .

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