JP2023065188A - Fluid supply device and gas supply method - Google Patents

Abstract

To attain space saving by efficiently disposing a plurality of flow passages and a gas control apparatus in a gas supply system for supplying a heat conductive gas to an adsorption surface of an electrostatic chuck device.SOLUTION: The present invention relates to a fluid supply device configured to supply a heat conductive gas to an adsorption surface of an electrostatic chuck device and comprising a block body in which a plurality of flow passages are formed, a gas control apparatus being provided in the middle and the flow passages being configured to control the heat conductive gas flowing inside. In the fluid supply device, the plurality of flow passages are formed to constitute a double layer structure inside of the block body. In the plurality of flow passages, a plurality of gas supply passages supplying the heat conductive gas to the adsorption surface are formed to constitute one layer in the double layer structure. An exhaust passage exhausting the heat conductive gas in the plurality of gas supply passages is formed to constitute the other layer in the double layer structure.SELECTED DRAWING: Figure 1

Description

The present invention relates to a fluid supply device used in a gas supply system for an electrostatic chuck device and a gas supply method using the same.

2. Description of the Related Art Conventionally, in a semiconductor manufacturing process using a plasma processing apparatus such as a plasma etching apparatus and a plasma CVD apparatus, an electrostatic chuck device is used to fix a sample such as a silicon wafer in a vacuum chamber. This electrostatic chuck device includes an attraction plate that attracts an object by electrostatic force, and a metal base plate that contacts the back surface of the attraction plate. Using an electrostatic chuck device, the silicon wafer is fixed by attracting the back surface (surface to be attracted) of the silicon wafer with an attraction plate, and the plasma heat applied to the silicon wafer, for example, is released to the base plate side to cool the surface. A uniform temperature distribution can be achieved.

The suction surface of the suction plate and the suction surface of the silicon wafer have minute unevenness. Therefore, even when the silicon wafer is chucked by the electrostatic chuck device, a minute space with a thickness of about 10 μm is generated between the surface to be chucked and the chucking surface, and the physical contact area is reduced. , the efficiency of heat transfer is reduced. Therefore, conventionally, a gas supply system having a plurality of gas supply ports that open to the adsorption surface of the adsorption plate is used to fill the space between the adsorption surface of the adsorption plate and the adsorption surface of the silicon wafer with a thermally conductive gas (so-called back gas). By supplying the side gas, plasma heat applied to the silicon wafer is efficiently released to the adsorption plate side (Patent Document 1).

JP 2020-053576 A

By the way, in the semiconductor manufacturing process using the plasma processing apparatus described above, it is required to improve the uniformity of the surface temperature of an object such as a wafer. The uniformity of the wafer surface temperature depends on the pressure and flow rate of the thermally conductive gas in a plurality of regions between the chucking surface and the chucked surface. Therefore, in the above-described gas supply system, a plurality of gas supply channels corresponding to each region are provided, and the flow rate and pressure of the thermally conductive gas flowing through the plurality of channels are individually adjusted by a gas control device to control each gas. It is desirable to be able to supply from the supply channel.

In the gas supply system described above, if the pressure of the thermally conductive gas supplied to the rear surface of the wafer or the like is too high, the wafer may separate from the adsorption surface. An exhaust channel is typically provided for exhausting gas.

However, in a semiconductor manufacturing apparatus equipped with a gas supply system, the physical space in which these flow paths and gas control equipment can be installed is limited. Therefore, it is required to efficiently install a plurality of gas supply channels, exhaust channels, and various gas control devices in this limited space.

SUMMARY OF THE INVENTION The present invention has been made to meet the above requirements, and provides a gas supply system for supplying a thermally conductive gas to an adsorption surface of an electrostatic chuck device, in which a plurality of flow paths and gas control devices are efficiently arranged to save space. The main task is to make it possible to

That is, the fluid supply device according to the present invention is for supplying a thermally conductive gas to the adsorption surface of the electrostatic chuck device, and the gas control device is provided midway to control the thermally conductive gas flowing inside. A block body having a plurality of flow paths formed therein, wherein the plurality of flow paths are formed to form a two-layer structure inside the block body, and the plurality of flow paths Among the flow paths, a plurality of gas supply flow paths for supplying a thermally conductive gas to the adsorption surface are formed so as to constitute one layer in the two-layer structure, and heat is generated in the plurality of gas supply flow paths. An exhaust passage for exhausting the conductive gas is formed so as to constitute the other layer in the two-layer structure.

With such a configuration, by integrating a plurality of gas supply channels, exhaust channels, and gas control devices in a block body, the size of the entire fluid supply device can be reduced. Inside the block body, a plurality of channels are formed to form a two-layer structure, with a plurality of gas supply channels forming one layer and an exhaust channel forming the other layer. As compared with the case where all these flow paths are arranged in the same layer, the total area occupied by each flow path in the block body can be reduced. Furthermore, by forming a plurality of gas supply channels and exhaust channels in two layers, each gas supply channel and exhaust channel can be brought closer to each other than when they are formed in the same layer. , the channel length of the channel connecting them can be shortened. The design can also be changed so that a fluid resistance element such as a ceramics restrictor can be inserted at an arbitrary position by opening the end of the flow path connecting the two layers, for example, from the block body. . In this way, it is possible to efficiently arrange a plurality of flow paths and gas control devices in a limited space, thereby saving space.

In the present specification, "a plurality of flow paths are formed so as to form a two-layer structure inside the block" means that when viewed from the device mounting surface side of the block on which the gas control device is mounted, In a plan view, it means that a plurality of flow paths formed so as to flow the thermally conductive gas along the in-plane direction are formed offset from each other along the depth direction. Each channel having a two-layer structure may or may not have overlapping portions in plan view.

Further, in this specification, the phrase "a plurality of gas supply channels are formed to constitute one layer and an exhaust channel is formed to constitute the other layer" means that one layer is provided with an exhaust flow channel. This does not preclude the formation of channels and the formation of gas supply channels in the other layer. That is, a plurality of gas supply channels and a part of the exhaust channel are formed so as to constitute one layer, and a gas supply channel and a gas supply channel are formed so as to constitute the other layer. intended to include

It is preferable that the gas supply device is formed such that the plurality of gas supply channels and the exhaust channel overlap in plan view.
In this way, the total area occupied by each flow path in a plan view can be made smaller, and space can be further saved.

In the gas supply device, it is preferable that a connection channel for connecting each gas supply channel and the exhaust channel is formed in the block body at an overlapping portion of the gas supply channel and the exhaust channel.
In this way, each gas supply channel and the exhaust channel can be connected at the shortest distance, so that further space saving can be achieved.

A part of each gas supply channel is open to the mounting surface of the block on which the gas control device is mounted, and a fluid resistance element is inserted into each gas supply channel from an opening on the mounting surface. preferably.
By doing so, it is possible to flexibly change the flow channel configuration of the gas supply device by, for example, changing the position of the fluid resistance element according to the use and purpose of the gas supply system.

A specific embodiment of the fluid resistance element includes a tubular member and a channel forming member that is inserted into the tubular member and forms a channel that acts as resistance.

It is preferable that the plurality of gas supply channels are connected to the inside of the block body, and a common gas channel for introducing the thermally conductive gas to the plurality of gas supply channels is formed.
In this way, gas control devices such as pressure sensors for measuring the pressure of the thermally conductive gas introduced into each gas supply channel are not individually provided in each gas supply channel. Since the gas control devices can be installed in the block body in common, the number of gas control devices to be attached to the block can be reduced, thereby further saving space.

Further, in a configuration including a common gas flow path, it is preferable that the gas supply flow path is formed so as to branch off from the common gas flow path to the left and right in a plan view.
In this way, when there are a large number of gas supply channels, by forming the gas supply channels on the left and right sides of the common gas channel in a well-balanced manner, the pressure of the thermally conductive gas introduced into each gas supply channel can be reduced. and variation in flow rate can be reduced. In addition, by forming the gas supply channels in a well-balanced manner (for example, symmetrically) in this way, the overall size can be made compact, and the distance from each gas supply channel to the adsorption surface of the electrostatic chuck device can be shortened. can. Such an effect becomes more remarkable as the number of gas supply passages increases.

It is preferable that the outlet ports of the plurality of gas supply channels are provided on the opposite left and right side surfaces of the block body.
In this way, when there are a large number of gas supply flow paths, piping can be laid out more easily than when a plurality of outlet ports are all provided on one side surface.

It is preferable that the block body is formed with a through-hole for inserting a cable of a gas control device along a thickness direction, which is a direction in which the plurality of flow paths forming the two-layer structure overlap.
By doing so, the cable of the gas control device attached to one surface (for example, the upper surface) of the block can be passed through the through hole of the block and connected to the control device or the like provided on the lower surface side. , Cables can be routed neatly, and more space can be saved.

Further, the gas supply method of the present invention is a method of supplying a thermally conductive gas to the adsorption surface of an electrostatic chuck device, and a gas control device is provided midway so as to control the thermally conductive gas flowing inside. A fluid supply device comprising a block body in which a plurality of configured flow paths are formed, wherein the plurality of flow paths are formed to form a two-layer structure inside the block body, and the plurality of flow paths are Among the channels, a plurality of gas supply channels for supplying a thermally conductive gas to the adsorption surface are formed so as to constitute one layer in the two-layer structure, and heat conduction is achieved in the plurality of gas supply channels. The thermally conductive gas is applied to the adsorption surface of the electrostatic chuck device by using a fluid supply device in which an exhaust passage for exhausting the thermal gas is formed so as to constitute the other layer in the two-layer structure. It is characterized by supplying
With such a gas supply method, the same effects as those of the fluid supply device of the present invention described above can be obtained.

According to the present invention configured as described above, in a gas supply system for supplying a thermally conductive gas to the chucking surface of an electrostatic chuck device, a plurality of flow paths and gas control devices can be efficiently arranged to save space.

1 is a schematic diagram showing the overall configuration of an electrostatic chuck device and a gas supply system according to the present embodiment; FIG. The fluid circuit diagram of the gas supply system in the same embodiment. The perspective view which shows the whole structure of the fluid supply apparatus in the same embodiment. FIG. 2 is a schematic diagram showing the fluid supply device of the same embodiment without a gas controller; FIG. 4 is a plan view showing the configuration of the internal flow path of the fluid supply device according to the same embodiment; The flow isometric view of the fluid supply apparatus in the same embodiment. FIG. 4 is a cross-sectional view showing the configuration of a common gas flow path and an exhaust flow path of the fluid supply device according to the same embodiment; FIG. 4 is a cross-sectional view showing the configuration of the gas supply channel of the fluid supply device in the same embodiment; FIG. 4 is a perspective view schematically showing the configuration of a sub-exhaust channel and a connection channel of the fluid supply device according to the same embodiment;

A fluid supply device 3 according to the present invention will be described below with reference to the drawings.

The fluid supply device 3 of this embodiment is a gas supply system 2 for the electrostatic chuck device 1 that supplies a thermally conductive gas to the attraction surface 1s of the electrostatic chuck device 1 that attracts an object such as a wafer W by electrostatic force. constitutes a part of

First, as shown in FIG. 1, the electrostatic chuck device 1 is arranged in a vacuum chamber VC of a semiconductor manufacturing apparatus using plasma, for example, and is for electrostatically chucking a wafer W to be processed. Specifically, the electrostatic chuck device 1 includes a chucking plate 11 having a circular flat plate shape made of an insulating material such as ceramics or glass and having a chucking surface 1s for electrostatically chucking a wafer W, and a chucking plate 11 embedded in the chucking plate 11. and a power source 13 for applying a voltage to the internal electrode 12 . By applying a voltage to the internal electrode 12 from the power supply 13, a dielectric polarization phenomenon occurs within the attraction plate 11, and the upper surface of the attraction plate 11 becomes a substantially planar attraction surface 1s. The vacuum chamber VC is configured to be evacuated by a vacuum pump.

A plurality of adsorption areas are set in advance on the adsorption surface 1s of the adsorption plate 11, and a plurality of gas supply ports 2p for blowing off a thermally conductive gas are formed in each adsorption area. Each gas supply port 2p is formed by a through-hole provided so as to penetrate the adsorption plate 11 in the plate thickness direction.

The gas supply system 2 is for supplying a thermally conductive gas (so-called backside gas) to the space between the attraction surface 1 s of the electrostatic chuck device 1 and the surface of the wafer W to be attracted. The gas supply system 2 is configured to supply a thermally conductive gas, the flow rate and pressure of which are individually adjusted for each area, from a gas supply port 2p provided in each adsorption area. The thermally conductive gas may be, for example, a single gas such as helium gas or argon gas, or an arbitrary gas such as a mixed gas in which a plurality of gases are mixed at an arbitrary ratio.

This gas supply system 2 includes a fluid supply device 3 for adjusting the flow rate and pressure of the thermally conductive gas supplied from the gas supply source and supplying it to each adsorption region of the electrostatic chuck device 1, and a fluid supply device. 3, and a control device C for controlling each device. The fluid circuit structure of this fluid supply device 3, including peripheral circuits, will be described with reference to FIG.

The fluid supply device 3 includes a common gas flow path 31 through which a thermally conductive gas flows, a plurality of parallel gas supply flow paths 32 connected to the common gas flow path 31 at their upstream ends, and a common upstream end. An exhaust channel 33 connected to the gas channel 31 and a connection channel 34 connecting each gas supply channel 32 and the exhaust channel 33 are provided. Gas control devices such as a pressure sensor, a fluid control valve, and an on-off valve OV are arranged in the middle of each flow path.

The common gas channel 31 introduces the thermally conductive gas supplied from the gas supply source into each gas supply channel 32 . The common gas flow path 31 has a gas introduction port Pi (also referred to as an inlet port) connected to its upstream end. A sexual gas is delivered.

The common gas channel 31 is configured to be able to control the total flow rate of the thermally conductive gas introduced into each gas supply channel 32 . Specifically, the common gas flow path 31 includes an open/close valve OV that opens and closes the flow path, a first fluid control valve FV1 that changes the flow rate of the thermally conductive gas flowing through the common gas flow path 31, and each gas supply flow path. A first pressure sensor PS1 for measuring the pressure of the thermally conductive gas introduced to 32 is provided in order from upstream. It can be said that the opening/closing valve OV, the first fluid control valve FV1, and the first pressure sensor PS1 are common among the gas supply flow paths 32. As shown in FIG.

Each gas supply channel 32 is provided corresponding to each adsorption area on the adsorption surface 1s. Each gas supply channel 32 has an upstream end connected downstream of the first fluid control valve FV1 in the common gas channel 31, and a downstream end connected to a gas supply port Ps (also referred to as an outlet port). It is Each gas supply channel 32 is configured to supply the thermally conductive gas introduced from the common gas channel 31 to each adsorption region through an external pipe connected to the gas supply port Ps.

Each gas supply channel 32 includes a fluid resistance element R, a second pressure sensor PS2 for measuring the pressure of the heat conductive gas downstream of the fluid resistance element R, and a second pressure sensor PS2 for changing the flow rate of the heat conductive gas passing through. A third pressure sensor PS3 for measuring the pressure of the thermally conductive gas downstream of the fluid control valve FV2 and the second fluid control valve FV2 is provided in this order from upstream.

The exhaust channel 33 is for exhausting excess thermally conductive gas flowing through the common gas channel 31 and the gas supply channel 32 at a predetermined flow rate. The exhaust passage 33 has an upstream end connected downstream of the first fluid control valve FV1 in the common gas passage 31, and a downstream end connected to the gas exhaust port Pe. It is configured to be evacuated by a vacuum pump provided in the external piping. The exhaust flow path 33 includes a fluid resistance element R, a fourth pressure sensor PS4 for measuring the pressure of the thermally conductive gas downstream of the fluidic resistance element R, and a third fluid for changing the flow rate of the passing thermally conductive gas. A fifth pressure sensor PS5 for measuring the pressure of the thermally conductive gas downstream of the control valve FV3 and the third fluid control valve FV3 is provided in order from upstream.

The connection channel 34 is for introducing part of the thermally conductive gas flowing through the gas supply channel 32 into the exhaust channel 33, and its upstream end is connected to the second fluid control valve FV2 in the gas supply channel 32. , and its downstream end is connected to the exhaust flow path 33 . A fluid resistance element R is provided in the connection channel 34 .

The fluid resistance element R provided in each of the flow passages described above serves as a resistance when the thermally conductive gas flows. It has an inherent flow rate characteristic that determines the mass flow rate, and is, for example, a laminar flow element resistor.

Further, the first fluid control valve FV1, the second fluid control valve FV2, and the third fluid control valve FV3 provided in each of the flow paths described above change their valve opening degrees according to the control signal from the control device C. change the flow rate of the heat-conducting gas flowing through each flow path, such as a piezo actuator valve, a solenoid actuator valve, a thermal actuator valve, or the like.

The control device C is a general-purpose or dedicated computer that incorporates a CPU, internal memory, etc. Based on a predetermined program stored in the internal memory, the CPU and its peripheral devices cooperate to operate the flow rate calculation unit C1 and the valve It exhibits at least the function as the control section C2.

The flow rate calculator C1 calculates the flow rate Q _in of the thermally conductive gas introduced from the common gas channel 31 into each gas supply channel 32, and the thermally conductive gas introduced from the common gas channel 31 into the exhaust channel 33. The flow rate Q _vac1 and the flow rate Q _vac2 of the thermally conductive gas introduced from each gas supply channel 32 into the exhaust channel are individually calculated. Specifically, the flow rate calculation unit C1 calculates the flow rate characteristic of the fluid resistance element R provided in each gas supply channel 32, and the primary side pressure and the secondary side pressure of each fluid resistance element R. , flow rates Q _in , Q _vac1 , and Q _vac2 of the thermally conductive gas introduced into each flow path.

Specifically, the flow rate calculator C1 calculates the flow rate characteristic function indicating the flow rate characteristic of the fluid resistance element R provided in the gas supply channel 32, the primary side pressure obtained from the first pressure sensor PS1, and the second pressure sensor PS2. A mass flow rate Q _in is calculated based on the secondary side pressure obtained from . For example, the flow rate characteristic function uses the primary side pressure applied to the fluid resistance element R, the secondary side pressure applied to the fluid resistance element R, and the temperature of the thermally conductive gas passing through the fluid resistance element R as input variables. , and is a map or the like expressed by a function having the mass flow rate passing through the fluid resistance element R as an output variable, and is stored in advance in a predetermined area of the memory. The calculated mass flow rate Q _in is the mass flow rate of the thermally conductive gas passing through the fluid resistance element R provided in each gas supply channel 32 .

The flow rate calculation unit C1 also includes a flow rate characteristic function indicating the flow rate characteristic of the fluid resistance element R provided in the exhaust flow path 33, the primary side pressure obtained from the first pressure sensor PS1, and the pressure obtained from the fourth pressure sensor PS4. The mass flow rate Q _vac1 is calculated based on the secondary side pressure. This calculated mass flow rate Q _vac1 is the mass flow rate of the thermally conductive gas passing through the fluid resistance element R provided in the exhaust flow path 33 .

In addition, the flow rate calculation unit C1 includes a flow rate characteristic function indicating the flow rate characteristic of the fluid resistance element R provided in the connection channel 34, the primary side pressure obtained from the third pressure sensor PS3, and the pressure obtained from the fifth pressure sensor PS5. The mass flow rate Q _vac2 is calculated based on the secondary side pressure. This calculated mass flow rate Q _vac2 is the mass flow rate of the thermally conductive gas passing through the fluid resistance element R provided in the connection channel 34 .

The valve control section C2 sends control signals to the first fluid control valve FV1, the second fluid control valve FV2 and the third fluid control valve FV3 to control the valve opening degrees. Specifically, the valve control unit C2 compares each of the mass flow rates Q _in , Q _vac1 , and Q _vac2 calculated by the flow rate calculation unit C1 with a predetermined target value set in advance for each mass flow rate. The opening degrees of the fluid control valves FV1, _FV2 and FV3 are feedback-controlled so that the mass flow rates _Qin , Qvac1 and _Qvac2 calculated by the calculator C1 match their respective target values.

The thermally conductive gas supplied from the gas supply source with such a configuration is distributed from the common gas flow path 31 to each gas supply flow path 32, and the flow rate and pressure are adjusted in each gas supply flow path 32, It is output from each corresponding gas supply port Ps. Excess heat conductive gas flowing through the common gas channel 31 and each gas supply channel 32 is introduced into the exhaust channel 33 and exhausted through the gas exhaust port Pe.

Next, the physical configuration of this fluid supply device 3 will be described with reference to FIGS. 3 to 9. FIG.

As for the gas supply device, the fluid supply device 3 is of an integrated type in which a plurality of flow paths and gas control devices are integrated. Specifically, this gas supply device includes a block body 4 in which flow paths such as the common gas flow path 31, the gas supply flow path 32, the exhaust flow path 33 and the connection flow path 34 are formed, and the block body 4, and attached piping fittings forming a gas introduction port Pi, a gas supply port Ps, and a gas exhaust port Pe.

As shown in FIGS. 3 to 5, the block 4 is made of resin and has a substantially faceplate shape. The upper surface 41 of the block 4 has a rectangular shape in plan view (or top view), and functions as a device mounting surface on which each gas control device is mounted. Specifically, the upper surface 41 includes valve mounting portions MV0 to MV3 (for example, concave portions) for mounting the fluid control valves and the open/close control valves, and sensor mounting portions MS1 to MS5 (for example, concave portions) for mounting the pressure sensors PS1 to PS5. For example, a plurality of recesses) are formed. The plurality of mounting portions are arranged such that the direction along one set of opposing side surfaces of the block body 4 in plan view is the vertical direction (vertical direction in FIG. 5), and the direction along the other pair of opposing side surfaces is the The direction is the horizontal direction (right and left directions in FIG. 5), and they are formed in a vertical and horizontal matrix (that is, in a grid pattern along the vertical and horizontal directions). More specifically, the plurality of mounting portions are formed so as to be aligned in the vertical direction at equal intervals, and are formed to be bilaterally symmetrical about the center line of the block body 4 in the horizontal direction.

Attached to the side surface of the block body 4 is the above-described accessory pipe fitting. Specifically, a plurality (here, 12 pieces in total) of attached piping fittings are attached to a pair of side surfaces of the block body 4 that are opposed to each other along the longitudinal direction. In a plan view, the plurality of attached pipe fittings are formed in the same number (six each) on both left and right sides so as to be equally spaced along the vertical direction and symmetrical. One of the attached pipe fittings functions as a gas introduction port Pi, the other functions as a gas exhaust port Pe, and the other ten functions as a gas supply port Ps. In this case, the uppermost left attachment pipe in plan view functions as the gas introduction port Pi, and the uppermost right attachment pipe functions as the gas exhaust port Pe.

As shown in FIG. 5, each flow path is formed substantially linearly along the vertical direction and the horizontal direction in plan view. Part of each flow path is opened at the valve mounting portions MV0 to MV3 and the sensor mounting portions MS1 to MS5 on the upper surface 41 of the block body 4, and fluid control valves and pressure sensors are installed so as to cover these openings. It is attached.

As shown in FIGS. 5 and 6, the common gas channel 31 includes an introduction channel portion 311 extending from the gas introduction port Pi to the center of the block body 4 along the lateral direction, and an introduction channel portion 311 at the center of the block body 4. and a central channel portion 312 connected to the portion 311 and extending along the longitudinal direction. 7, the common gas flow path 31 includes a gas introduction port Pi, valve mounting portions MV0 and MV1 for mounting an on-off valve OV and a first fluid control valve FV1, and a sensor mounting portion for mounting a first pressure sensor PS1. It is formed so as to communicate between the portion MS1 and the central channel portion 312 .

Each gas supply channel 32 is branched and extends laterally from the central channel portion 312 of the common gas channel 31 to both left and right sides, and is formed such that its downstream end is connected to the corresponding gas supply port Ps. It is Each gas supply flow path 32 is provided so as to be parallel to each other along the horizontal direction, and is provided so as to be equally spaced in the vertical direction.

As shown in FIG. 8, each gas supply channel 32 includes a central channel portion 312 of the common gas channel 31, sensor mounting portions MS2 and MS3 for mounting a second pressure sensor PS2 and a third pressure sensor PS3, and a third pressure sensor PS3. It is formed so as to communicate between the valve mounting portion MV2 for mounting the two-fluid control valve FV2 and the gas supply port Ps. In each gas supply channel 32, the above-described fluid resistance element R is provided between the central channel portion 312 and the sensor mounting portion MS2 corresponding to the second pressure sensor PS2.

Specifically, the fluid resistance element R consists of a tubular member made of resin, metal, or the like, and a flow path forming member that forms a flow path that is inserted into the tubular member and acts as resistance (hereinafter also referred to as a resistance flow path). It is composed of The flow path forming member is, for example, a columnar member made of ceramic or the like, and the resistance flow path is formed by axially penetrating the flow path forming member, and is, for example, linear with a circular cross section. . The fluid resistance element R is inserted (inserted) from the opening of each gas supply channel 32 formed in the sensor mounting portion MS2 corresponding to the second pressure sensor PS2.

Thus, in the fluid supply device 3 of this embodiment, a plurality of internal flow paths are formed along the thickness direction of the block body 4 so as to form a two-layer structure. More specifically, the plurality of gas supply channels 32 are formed so as to constitute one layer (upper layer), and the exhaust channel 33 is formed so as to constitute the other layer (lower layer). formed.

As shown in FIGS. 5 and 6, the exhaust channel 33 includes a main exhaust channel portion 331 having an upstream end connected to the central channel portion 312 and a downstream end connected to the gas exhaust port Pe, and each gas supply port. It has a sub-exhaust channel portion 332 that extracts part of the heat conductive gas flowing through the channel 32 and guides it to the main exhaust channel portion 331, and a communication channel portion 333 that communicates them. In the exhaust channel 33, the main exhaust channel portion 331 is formed so as to constitute an upper layer together with the common gas channel 31 and the gas supply channel 32, and the sub-exhaust channel portion 332 is formed so as to constitute a lower layer. is formed in

The main exhaust passage portion 331 is formed in a substantially straight line along the lateral direction from the center of the block body 4 toward the gas exhaust port Pe in plan view. The main exhaust channel portion 331 is formed symmetrically with the introduction channel portion 311 with the central channel portion 312 as the axis of symmetry, and is formed so as to be parallel to the gas supply channels 32 . ing. As shown in FIG. 7, the main exhaust channel portion 331 includes a central channel portion 312, a valve attachment portion MV3 to which a third fluid control valve FV3 is attached, a fourth pressure sensor PS4 and a fifth pressure sensor PS5. The sensor mounting portions MS4 and MS5 are formed to communicate with the gas exhaust port Pe. A fluid resistance element R is provided between the sensor mounting portion MS4 corresponding to the fourth pressure sensor PS4 in the main exhaust passage portion 331 and the central passage portion 312. As shown in FIG. This fluid resistance element R is mounted by being inserted through an opening of the main exhaust flow channel portion 331 formed in the sensor mounting portion MS4 corresponding to the fourth pressure sensor PS4, as in the gas supply flow channel 32. ing.

As shown in FIGS. 6, 8, and 9, the sub-exhaust flow path portion 332 is formed below each gas supply flow path 32 in the thickness direction of the block body 4, and is configured to allow a plurality of gases to pass through in plan view. It is formed so as to overlap (more specifically, cross) all of the supply channels 32 . Specifically, the secondary exhaust channel portion 332 includes an inflow channel portion 332a into which the thermally conductive gas from the plurality of gas supply channels 32 flows. The inflow channel portion 332 a is formed in a substantially linear shape along the vertical direction in a plan view, and crosses each of the gas supply channels 32 by longitudinally cutting through the plurality of gas supply channels 32 . Here, the sub-exhaust channel portion 332 includes two inflow channel portions 332a formed symmetrically with the central channel portion 312 interposed therebetween. It intersects with the gas supply channel 32 branched to the left and right. In a plan view, the inflow channel portion 332a overlaps (here intersects) with each gas supply channel 32 at the sensor mounting portion MS3 corresponding to the third pressure sensor PS3. That is, the inflow channel portion 332a is formed so as to pass directly below the sensor mounting portion MS3 corresponding to the third pressure sensor PS3.

The communication channel portion 333 communicates the main exhaust channel portion 331 constituting the upper layer with the sub-exhaust channel portion 332 constituting the lower layer. It is composed of a substantially straight tubular channel formed along the thickness direction of the body 4 . The main exhaust passage portion 331 and the sub-exhaust passage portion 332 overlap in a plan view at the sensor attachment portion MS5 corresponding to the fifth pressure sensor PS5, and the communication passage portion 333 is formed in the overlapping portion. ing.

The sub-exhaust channel portion 332 of the exhaust channel 33 and each gas supply channel 32 are connected by the above-described connection channel 34 at the overlapping portion (here, the crossing portion). Specifically, the connection channel 34 is formed by a substantially straight channel formed along the thickness direction of the block body 4 as shown in FIGS. 8 and 9 . The connecting channel 34 has a lower end along the thickness direction connected to the secondary exhaust channel 332, and an upper end corresponding to the third pressure sensor PS3 on the upper surface 41 of the block body 4. It opens to the sensor mounting portion MS3. A fluid resistance element R is provided in the connection channel 34 . This fluid resistance element R, like those in the gas supply channel 32 and the main exhaust channel portion 331, is the opening of the main exhaust channel portion 331 formed in the sensor mounting portion MS3 corresponding to the third pressure sensor PS3. It is installed by inserting from the part.

Further, the block body 4 of the present embodiment is provided with a cable insertion portion 5 for inserting the cable of each gas control device attached to the upper surface 41 to the lower surface side. The cable insertion portion 5 includes a first cable insertion portion 51 for inserting a cable of each control device corresponding to the gas supply flow path 32, and a cable insertion portion 51 for inserting each control device corresponding to the common gas flow path 31 and the exhaust flow path 33. and a second cable insertion portion 52 for inserting a cable.

Specifically, the first cable insertion portion 51 is a through hole formed so as to penetrate vertically along the thickness direction of the block body 4 . As shown in FIG. 5 , the first cable insertion portion 51 has an elongated hole shape extending in the horizontal direction in a plan view, and is formed parallel to each gas supply channel 32 . Each first cable insertion portion 51 is formed between each gas supply channel 32 .

The second cable insertion portion 52 is a notch groove (recess) formed in the side surface of the block body 4 adjacent to the common gas channel 31 and the exhaust channel 33 . This notch groove is formed on the side surface of the block body 4 from the upper surface 41 to the lower surface.

According to the fluid supply device 3 of the present embodiment configured as described above, the entire fluid supply device 3 is miniaturized by integrating a plurality of gas supply flow paths 32, exhaust flow paths 33, and gas control devices. be able to. Inside the block 4, a plurality of channels are formed to form a two-layer structure, with a plurality of gas supply channels 32 forming one layer and an exhaust channel 33 forming the other layer. Since they are formed so as to form layers, the total area occupied by each flow path in the block 4 can be made smaller than when all these flow paths are arranged in the same layer. Furthermore, by forming the plurality of gas supply channels 32 and the exhaust channels 33 in two upper and lower layers, each gas supply channel 32 and the exhaust channel 33 can be separated compared to the case where they are formed in the same layer. Since they can be brought closer, the channel length of the channel connecting them can be shortened. In this way, it is possible to efficiently arrange a plurality of flow paths and gas control devices in a limited space, thereby saving space.

In addition, a plurality of gas supply channels 32 and exhaust channels 33 are formed so as to overlap each other in a plan view, and a connection channel 34 that connects these channels to each other is formed in the overlapping portion. Since each gas supply channel 32 and the exhaust channel 33 can be connected at the shortest distance, it is possible to achieve further space saving.

It should be noted that the present invention is not limited to the above embodiments.

For example, in the above-described embodiments, the number and positions of pressure sensors and fluid control valves in each flow path are only examples, and different numbers may be arranged at different positions in other embodiments. Further, although the fluid supply device 3 of the above-described embodiment has only one common gas channel 31 for introducing the thermally conductive gas into each gas supply channel 32, it may have a plurality of common gas channels. Further, the fluid supply device 3 of another embodiment may have a plurality of exhaust passages 33 .

Further, in the above-described embodiment, each flow path is configured such that the uppermost left accessory pipe functioning as a gas introduction port Pi and the uppermost right accessory pipe functioning as a gas exhaust port Pe when viewing the block 4 from above. However, it is not limited to this. In another embodiment, each flow path may be configured such that different attached piping fittings function as the gas introduction port Pi and the gas exhaust port Pe.

Further, in the above-described embodiment, the communication channel portion 333 and the connection channel 34 are formed along the thickness direction of the block body 4, but this is not restrictive. The communication channel part 333 and the connection channel 34 of other embodiments may be formed so as to be inclined with respect to the thickness direction as long as the upper layer and the lower layer can be communicated with each other.

In addition, the secondary exhaust channel portion 332 of the above-described embodiment is formed so as to intersect with all of the plurality of gas supply channels 32 at the overlapped portion in plan view, but the present invention is not limited to this. In another embodiment, the sub-exhaust channel portion 332 may be formed so as to face in the same direction as part or all of the plurality of gas supply channels 32 in a plan view at the overlapping portion thereof.

Further, in the above-described embodiment, the exhaust channel portion 332 is formed so as to overlap with all of the plurality of gas supply channels 32 in plan view, but in other embodiments, it overlaps with only a part of the gas supply channels 32 . It may be formed so as to overlap.

Further, the block body 4 of another embodiment may not be provided with the cable insertion portion 5 .

In addition, the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications are possible without departing from the spirit of the present invention.

REFERENCE SIGNS LIST 1 ... electrostatic chuck device 2 ... gas supply system 3 ... fluid supply device 31 ... common gas channel 32 ... gas supply channel 33 ... exhaust channel 4 ... block body

Claims (10)

A plurality of flow paths for supplying a thermally conductive gas to the chucking surface of the electrostatic chuck device, and having a gas control device installed on the way so as to control the thermally conductive gas flowing therein. A fluid supply device comprising a block body formed with
The plurality of flow paths are formed to form a two-layer structure inside the block body, and among the plurality of flow paths,
A plurality of gas supply channels for supplying a thermally conductive gas to the adsorption surface are formed so as to constitute one layer in the two-layer structure,
A fluid supply device, wherein an exhaust passage for exhausting the thermally conductive gas in the plurality of gas supply passages is formed so as to constitute the other layer in the two-layer structure. 2. The fluid supply device according to claim 1, wherein the plurality of gas supply channels and the exhaust channel are formed so as to overlap each other in plan view. 3. The fluid supply device according to claim 2, wherein a connecting passage connecting said gas supply passages and said exhaust passages to each other is formed in said block body at overlapping portions of said gas supply passages and said exhaust passages. A part of each gas supply channel is open to the mounting surface of the block on which the gas control device is mounted,
4. The fluid supply device according to any one of claims 1 to 3, wherein a fluid resistance element is inserted into each gas supply channel from an opening on the mounting surface. 5. The fluid supply device according to claim 4, wherein the fluid resistance element includes a tubular member and a flow path forming member that is inserted into the tubular member and forms a flow path that acts as resistance. 6. The block body according to any one of claims 1 to 5, wherein the plurality of gas supply channels are connected to each other, and a common gas channel for introducing the thermally conductive gas into the plurality of gas supply channels is formed. or the fluid supply device according to claim 1. 7. The fluid supply device according to claim 6, wherein said gas supply channel is formed so as to branch off from said common gas channel to the left and right when viewed in a plan view. 8. The fluid supply device according to claim 7, wherein outlet ports of said plurality of gas supply passages are provided on said opposite left and right side surfaces of said block body. 9. The block body according to any one of claims 1 to 8, wherein a through-hole is formed for inserting a cable of a gas control device along a thickness direction, which is a direction in which the plurality of flow paths forming the two-layer structure overlap. or the fluid supply device according to claim 1. A method of supplying a thermally conductive gas to an adsorption surface of an electrostatic chuck device,
A fluid supply device comprising a block body in which a plurality of flow paths are formed and a gas control device is provided on the way to control the thermally conductive gas flowing therein,
The plurality of flow paths are formed to form a two-layer structure inside the block body, and among the plurality of flow paths,
A plurality of gas supply channels for supplying a thermally conductive gas to the adsorption surface are formed so as to constitute one layer in the two-layer structure,
The electrostatic chuck device using a fluid supply device in which an exhaust channel for exhausting the thermally conductive gas in the plurality of gas supply channels is formed so as to constitute the other layer in the two-layer structure. A gas supply method for supplying the thermally conductive gas to the adsorption surface of.

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