JP2023059081A - Substrate support part and plasma processing device - Google Patents

Abstract

To provide a substrate support part and a plasma processing device capable of improving uniformity of plasma processing.SOLUTION: A substrate support part is disposed within a plasma processing vessel, and includes an electrostatic chuck having a support surface that supports a substrate and made of a dielectric, and a base that supports the electrostatic chuck. The electrostatic chuck includes: a heat transfer gas supply hole that supplies heat transfer gas to the support surface from the base side; and a first member disposed in the heat transfer gas supply hole and made of a porous material whose porosity is controlled so as to match, on the support surface, physical properties with the dielectric.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to substrate supports and plasma processing apparatuses.

2. Description of the Related Art A plasma processing apparatus has a substrate supporting portion for supporting a substrate to be processed in a plasma processing chamber in which plasma processing is performed. The substrate supporting portion is provided with a supply hole for supplying heat transfer gas between the back surface of the substrate placed on the substrate supporting portion and the supporting surface of the substrate supporting portion. Abnormal discharge may occur in this supply hole during plasma processing. In order to suppress the abnormal discharge, it has been proposed to insert a porous material into the supply hole.

U.S. Patent No. 10896837

The present disclosure provides a substrate support and plasma processing apparatus capable of improving uniformity of plasma processing.

A substrate support according to one aspect of the present disclosure is a substrate support that is arranged in a plasma processing container, includes a support surface that supports a substrate, and is formed of a dielectric electrostatic chuck; The electrostatic chuck has a heat transfer gas supply hole for supplying a heat transfer gas from the base side to the support surface, and is arranged in the heat transfer gas supply hole, and on the support surface, a first member composed of a porous material having porosity controlled to match physical properties with the dielectric.

According to the present disclosure, the uniformity of plasma processing can be improved.

FIG. 1 is a diagram illustrating an example of a plasma processing system according to one embodiment of the present disclosure. FIG. 2 is a top view showing an example of the arrangement of heat transfer gas supply holes and pin through holes on the support surface of the present embodiment. FIG. 3 is a diagram showing an example of a cross section taken along line AA of FIG. FIG. 4 is a view showing an example of cross sections of the lift pins and pin through holes when the lift pins are lowered. FIG. 5 is a view showing an example of cross sections of the lift pins and pin through holes when the lift pins are raised.

Embodiments of the disclosed substrate supporting portion and plasma processing apparatus will be described in detail below with reference to the drawings. Note that the disclosed technology is not limited by the following embodiments.

When a porous material is inserted into the supply hole to suppress abnormal discharge in the supply hole of the heat transfer gas during plasma processing, there will be a point (singular point) where the material is different on the support surface. Also, even if the porous material is not inserted into the supply hole (if there is a space), the singularity is similarly obtained. The porous material inserted into the supply hole has different physical properties such as relative permittivity and thermal conductivity from the material of the surrounding support surface, so uniformity in plasma processing such as plasma uniformity and substrate temperature uniformity is impaired. Sometimes. Therefore, it is expected to improve the uniformity of plasma processing.

[Configuration of plasma processing system]
A configuration example of the plasma processing system will be described below. FIG. 1 is a diagram illustrating an example of a plasma processing system according to one embodiment of the present disclosure. As shown in FIG. 1, the plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2 . A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10 , a gas supply section 20 , a power supply 30 and an exhaust system 40 . Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas introduction is configured to introduce at least one process gas into the plasma processing chamber 10 . The gas introduction section includes a showerhead 13 . A substrate support 11 is positioned within the plasma processing chamber 10 . The showerhead 13 is arranged above the substrate support 11 . In one embodiment, showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 . The plasma processing chamber 10 has a plasma processing space 10 s defined by a showerhead 13 , side walls 10 a of the plasma processing chamber 10 and a substrate support 11 . The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space 10s. Plasma processing chamber 10 is grounded. The showerhead 13 and substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10 .

The substrate support portion 11 includes a body portion 111 and a ring assembly 112 . The body portion 111 has a central region 111 a for supporting the substrate W and an annular region 111 b for supporting the ring assembly 112 . A wafer is an example of a substrate W; The annular region 111b of the body portion 111 surrounds the central region 111a of the body portion 111 in plan view. The substrate W is arranged on the central region 111 a of the main body 111 , and the ring assembly 112 is arranged on the annular region 111 b of the main body 111 so as to surround the substrate W on the central region 111 a of the main body 111 . Accordingly, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112. FIG.

In one embodiment, body portion 111 includes base 1110 and electrostatic chuck 1111 . Base 1110 includes a conductive member. A conductive member of the base 1110 can function as a bottom electrode. An electrostatic chuck 1111 is arranged on the base 1110 . The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. Ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or may be placed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF/DC electrode coupled to an RF (Radio Frequency) power source 31 and/or a DC (Direct Current) power source 32, which will be described later, may be arranged in the ceramic member 1111a. In this case, at least one RF/DC electrode functions as the bottom electrode. If a bias RF signal and/or a DC signal, described below, is applied to at least one RF/DC electrode, the RF/DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and at least one RF/DC electrode may function as a plurality of lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Accordingly, the substrate support 11 includes at least one bottom electrode.

Ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is made of a conductive material or an insulating material, and the cover ring is made of an insulating material.

Also, the substrate supporter 11 may include a temperature control module configured to control at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include heaters, heat transfer media, channels 1110a, or combinations thereof. A heat transfer fluid, such as brine or gas, flows through flow path 1110a. In one embodiment, channels 1110 a are formed in base 1110 and one or more heaters are positioned in ceramic member 1111 a of electrostatic chuck 1111 . Further, the substrate supporting portion 11 includes a heat transfer gas supply portion 52 which is configured to supply a heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

The showerhead 13 is configured to introduce at least one processing gas from the gas supply 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through a plurality of gas introduction ports 13c. Showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction part may include one or more side gas injectors (SGI: Side Gas Injectors) attached to one or more openings formed in the side wall 10a.

Gas supply 20 may include at least one gas source 21 and at least one flow controller 22 . In one embodiment, gas supply 20 is configured to supply at least one process gas from respective gas sources 21 through respective flow controllers 22 to showerhead 13 . Each flow controller 22 may include, for example, a mass flow controller or a pressure controlled flow controller. Additionally, gas supply 20 may include one or more flow modulation devices that modulate or pulse the flow of at least one process gas.

Power supply 30 includes an RF power supply 31 coupled to plasma processing chamber 10 via at least one impedance match circuit. RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and/or at least one upper electrode. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Accordingly, RF power source 31 may function as at least part of a plasma generator configured to generate a plasma from one or more process gases in plasma processing chamber 10 . Also, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated in the substrate W, and ion components in the formed plasma can be drawn into the substrate W. FIG.

In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit to generate a source RF signal (source RF power) for plasma generation. configured as In one embodiment, the source RF signal has a frequency within the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. One or more source RF signals generated are provided to at least one bottom electrode and/or at least one top electrode.

A second RF generator 31b is coupled to the at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. One or more bias RF signals generated are provided to at least one bottom electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

Power supply 30 may also include a DC power supply 32 coupled to plasma processing chamber 10 . The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one bottom electrode and configured to generate a first DC signal. A generated first bias DC signal is applied to at least one bottom electrode. In one embodiment, the second DC generator 32b is connected to the at least one top electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one top electrode.

In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one bottom electrode and/or at least one top electrode. The voltage pulses may have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and the at least one bottom electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses in one cycle. Note that the first and second DC generators 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generator 32a may be provided instead of the second RF generator 31b. good.

The exhaust system 40 may be connected to a gas outlet 10e provided at the bottom of the plasma processing chamber 10, for example. Exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. Vacuum pumps may include turbomolecular pumps, dry pumps, or combinations thereof.

Controller 2 processes computer-executable instructions that cause plasma processing apparatus 1 to perform the various steps described in this disclosure. Controller 2 may be configured to control elements of plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1 . The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented by, for example, a computer 2a. Processing unit 2a1 can be configured to perform various control operations by reading a program from storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2, read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[Details of substrate support part 11]
Next, details of the substrate supporting portion 11 will be described with reference to FIGS. 2 and 3. FIG. FIG. 2 is a top view showing an example of the arrangement of heat transfer gas supply holes and pin through holes on the support surface of the present embodiment. FIG. 3 is a diagram showing an example of a cross section taken along line AA of FIG. As shown in FIG. 2, a plurality of heat transfer gas supply holes 50 and a plurality of pin through holes 60 are provided at regular intervals on the circumference C1 in the central region 111a, which is the substrate supporting surface. Also, in the central region 111a, a plurality of heat transfer gas supply holes 50 are provided at regular intervals on the circumference C2. Further, in the annular region 111b, which is the ring support surface, a plurality of heat transfer gas supply holes 50 are provided at regular intervals on the circumference C3. The number of heat transfer gas supply holes 50 on the circumferences C1 to C3 can be six, for example, but the number is not limited as long as they are equally spaced on the circumferences C1 to C3. Also, the number of through-holes 60 for pins on the circumference C1 can be, for example, three, but may be four or more.

As shown in FIG. 3 , each heat transfer gas supply hole 50 is connected to a heat transfer gas supply path 51 provided inside the base 1110 . Further, each pin through-hole 60 is connected to the heat transfer gas supply path 51 so as to be able to supply the heat transfer gas to the central region 111 a through the gap with the lift pin 61 . In FIG. 3, the channel 1110a in the base 1110 and the electrostatic electrode 1111b in the electrostatic chuck 1111 are omitted.

The heat transfer gas supply part 52 supplies heat transfer gas to the heat transfer gas supply holes 50 and the pin through holes 60 provided in the base 1110 and the electrostatic chuck 1111 of the substrate support part 11 via the heat transfer gas supply path 51 . Supply hot gas (cold heat transfer gas). Helium gas, for example, is used as the heat transfer gas. The heat transfer gas is supplied between the back surface of the substrate W and the central region 111a from the heat transfer gas supply holes 50 and the pin through holes 60 in the central region 111a. Also, the heat transfer gas is supplied between the ring assembly 112 and the annular region 111b from the heat transfer gas supply holes 50 in the annular region 111b. By supplying the heat transfer gas, heat is removed from the substrate W and the edge ring which have been heated to high temperatures by the plasma processing.

A member 53 made of a porous material is arranged in the heat transfer gas supply hole 50 . The member 53 is an example of a first member. The member 53 is a porous material whose porosity is controlled so as to match the physical properties of the ceramic member 1111a of the electrostatic chuck 1111 in the central region 111a and the annular region 111b. The member 53 is, for example, inserted into the heat transfer gas supply hole 50 when the electrostatic chuck 1111 is manufactured, and is sintered simultaneously with the ceramic member 1111a. That is, the member 53 is integrated with the surrounding ceramic member 1111 a inside the heat transfer gas supply hole 50 of the electrostatic chuck 1111 . Note that the member 53 may be fixed in the heat transfer gas supply hole 50 by another method.

A lift pin 61 having a tip portion 64 made of a porous material is disposed in the pin through hole 60 . The tip portion 64 is an example of a second member. The lift pin 61 can be slid up and down by the drive mechanism 62 so that the tip portion 64 can protrude from the surface of the central region 111a. An O-ring 63 is provided at the bottom of the pin through-hole 60 to maintain airtightness with the lift pin 61 . The tip portion 64 is a porous material whose porosity is controlled so as to match the physical properties of the ceramic member 1111a of the electrostatic chuck 1111 in the central region 111a. The lift pin 61 may be configured such that not only the tip portion 64 but also the entire lift pin 61 is made of porous material.

Here, details of the lift pin 61 will be described with reference to FIGS. 4 and 5. FIG. FIG. 4 is a view showing an example of cross sections of the lift pins and pin through holes when the lift pins are lowered. FIG. 5 is a view showing an example of cross sections of the lift pins and pin through holes when the lift pins are raised. As shown in FIG. 4 , the tip portion 64 is provided over a length that is substantially the same as the thickness of the electrostatic chuck 1111 from the tip of the lift pin 61 . The upper end of the tip portion 64 is provided with a convex portion 64a having a diameter larger than that of the pin through hole 60 . The convex portion 64a has a conical shape centered on the lift pin 61, and the inclined surface 64b contacts the inclined surface 60a of the concave portion provided at the upper end of the pin through hole 60. As shown in FIG. That is, when the lift pin 61 is lowered, the inclined surface 60a and the inclined surface 64b abut against each other, so that the tip portion 64 closes the upper end of the pin through hole 60. As shown in FIG. That is, the lift pin 61 is configured such that a portion of the side surface (inclined surface 64b) of the tip portion 64 is in circumferential contact with the upper side surface (inclined surface 60a) of the pin through hole 60. As shown in FIG. Further, the upper surface of the tip portion 64 and the surface of the central region 111a are configured to be substantially the same surface. At this time, the heat transfer gas is supplied between the back surface of the substrate W and the central region 111a through the gap between the pin through-hole 60 and the lift pin 61 through the inside of the tip portion 64 which is a porous material.

On the other hand, as shown in FIG. 5, when the lift pins 61 are lifted, the tip portions 64 protrude from the surface of the central region 111a, and the substrate W lifted by the lift pins 61 can be transferred by an arm of a transfer robot (not shown). . At this time, the upper portion of the pin through hole 60 is opened.

(When matching relative permittivity)
In the member 53 and the tip portion 64, physical properties to be matched with those of the ceramic member 1111a include, for example, dielectric constant or thermal conductivity. When the uniformity of the plasma is emphasized, the relative permittivity is made uniform, and when the uniformity of the temperature of the substrate W is emphasized, the thermal conductivity is made uniform. For example, when the ceramic member 1111a is alumina (Al2O3) and the relative permittivity is uniform, the member 53 and the tip 64 are made of zirconia (ZrO2) or hafnia (HfO2). The porosity of the member 53 and the tip portion 64 is controlled to match the relative permittivity. First, a target relative lower limit R _min and a target relative upper limit R _max with respect to the relative permittivity of the ceramic member 1111a are set as the target relative permittivity range. For example, the target ratio lower limit R _min =0.7 and the target ratio upper limit R _max =1.3.

Next, the porosity a% that satisfies the following formula (1) is calculated. Here, the dielectric constant of alumina of the ceramic member 1111a, which is the base material, is ε _r1 =9.9, and the dielectric constant of zirconia, which is the constituent material of the member 53 and the tip portion 64, is ε _r2 =33. and In other words, a material that satisfies the condition of relative permittivity ε _r2 >ε _r1 is used as the constituent material of the member 53 and the tip portion 64 .

From the above formula (1), when zirconia is used for the member 53 and the tip portion 64, it is required that the porosity a% should be 61% to 79%. On the other hand, when hafnia is used for the member 53 and the tip portion 64, the relative dielectric constant of hafnia is ε _r2 =25, and the porosity a% should be 49% to 72% according to the above equation (1). is required. The member 53 and the tip portion 64 are produced by being controlled so as to have the obtained porosity a%. By using the member 53 and the tip portion 64 made of zirconia or hafnia in this manner, the relative permittivity can be made uniform in the plane of the central region 111a and the annular region 111b, and the source RF signal and the bypass RF signal can be generated. In-plane transmittance can be made uniform. That is, the uniformity of plasma generated in the plasma processing space 10s can be improved. That is, the uniformity of plasma processing can be improved. Furthermore, since the member 53 is arranged in the heat transfer gas supply hole 50, abnormal discharge can be suppressed.

(When aligning thermal conductivity)
Next, the case of uniforming the thermal conductivity will be described. For example, when the ceramic member 1111a is alumina (Al2O3) and the thermal conductivity is to be uniform, the member 53 and the tip portion 64 use aluminum nitride (AlN) or silicon carbide (SiC). The member 53 and tip 64 are controlled in porosity to match thermal conductivity. First, a target ratio lower limit R _min and a target ratio upper limit R _max with respect to the thermal conductivity of the ceramic member 1111a are set as the target thermal conductivity range. For example, the target ratio lower limit R _min =0.7 and the target ratio upper limit R _max =1.3.

Next, the porosity a% that satisfies the following formula (2) is calculated. Here, the thermal conductivity of alumina of the ceramic member 1111a, which is the base material, is λ ₁ =32 [W/(m·K)], and the thermal conductivity of aluminum nitride, which is the constituent material of the member 53 and the tip 64, is λ 1 =32 [W/(m·K)]. Let the rate be λ ₂ =150 [W/(m·K)]. In other words, as the constituent material of the member 53 and the tip portion 64, a material satisfying the condition of thermal conductivity λ ₂ >λ ₁ is used.

From the above formula (2), when aluminum nitride is used for the member 53 and the tip portion 64, it is required that the porosity a% should be 72.3% to 85.0%. On the other hand, when silicon carbide is used as the member 53 and the tip portion 64, the thermal conductivity of silicon carbide is λ ₂ =170 [W/(mK)], and the porosity a % is required to be 75.5% to 86.8%. The member 53 and the tip portion 64 are produced by being controlled so as to have the obtained porosity a%. In this way, by using the member 53 and the tip portion 64 made of aluminum nitride or silicon carbide, the thermal conductivity can be made uniform in the plane of the central region 111a and the annular region 111b, and the in-plane heat conduction can be improved. can be made uniform. That is, the temperature uniformity of the substrate W can be improved. That is, the uniformity of plasma processing can be improved. Furthermore, since the member 53 is arranged in the heat transfer gas supply hole 50, abnormal discharge can be suppressed.

In addition, although the case where the heat transfer gas is supplied also from the through-hole 60 for pins was demonstrated in above-described embodiment, it is not limited to this. For example, the pin through-hole 60 may not be connected to the heat transfer gas supply path 51 so that the heat transfer gas is not supplied from the pin through-hole 60 . In this case, the tip portion 64 of the lift pin 61 is made of the same material as the ceramic member 1111a, such as alumina (Al2O3). That is, since the tip portion 64 of the lift pin 61 is made of the same material as the ceramic member 1111a, the relative permittivity and thermal conductivity of the pin through hole 60 can be made the same as those of the ceramic member 1111a. Therefore, by arranging the member 53 in the heat transfer gas supply hole 50, the relative permittivity or thermal conductivity can be made uniform in the plane of the central region 111a and the annular region 111b.

As described above, according to the present embodiment, the substrate supporting portion 11 is arranged in the plasma processing container (plasma processing chamber 10), and the supporting surface (central region 111a) for supporting the substrate W is It also has an electrostatic chuck 1111 made of a dielectric and a base 1110 that supports the electrostatic chuck 1111 . The electrostatic chuck 1111 is arranged in the heat transfer gas supply hole 50 for supplying the heat transfer gas from the base 1110 side to the support surface, and in the heat transfer gas supply hole 50, and has the same physical characteristics as the dielectric on the support surface. and a first member (member 53) made of a porous material whose porosity is controlled as follows. As a result, the uniformity of plasma processing can be improved.

Further, according to the present embodiment, the substrate supporter 11 further has lift pins 61 for transferring the substrate W thereon. The electrostatic chuck 1111 further includes pin through holes 60 through which the lift pins 61 pass. The lift pin 61 has a second member (tip portion 64) made of a porous material on the tip side. As a result, the uniformity of plasma processing can be further improved.

In addition, according to the present embodiment, the lift pin 61 is configured such that a part of the side surface (inclined surface 64b) of the second member is in circumferential contact with the upper side surface (inclined surface 60a) of the pin through-hole 60. configured to As a result, it is possible to improve the uniformity of the plasma processing while supplying the heat transfer gas from the pin through-holes 60 .

Also, according to this embodiment, the dielectric is alumina. As a result, the uniformity of plasma processing can be improved.

Also, according to this embodiment, the physical property is the dielectric constant. As a result, the uniformity of plasma generated in the plasma processing space 10s can be improved.

Further, according to this embodiment, the porous material is zirconia. As a result, the uniformity of plasma generated in the plasma processing space 10s can be improved.

Also, according to this embodiment, the porosity is in the range of 61% to 79%. As a result, the uniformity of plasma generated in the plasma processing space 10s can be improved.

Further, according to this embodiment, the porous material is hafnia. As a result, the uniformity of plasma generated in the plasma processing space 10s can be improved.

Also, according to this embodiment, the porosity is in the range of 49% to 72%. As a result, the uniformity of plasma generated in the plasma processing space 10s can be improved.

Also according to this embodiment, the physical property is thermal conductivity. As a result, the temperature uniformity of the substrate W can be improved.

Further, according to this embodiment, the porous material is aluminum nitride. As a result, the temperature uniformity of the substrate W can be improved.

Further, according to this embodiment, the porosity is in the range of 72.3% to 85.0%. As a result, the temperature uniformity of the substrate W can be improved.

Further, according to this embodiment, the porous material is silicon carbide. As a result, the temperature uniformity of the substrate W can be improved.

Also, according to this embodiment, the porosity is in the range of 75.5% to 86.8%. As a result, the temperature uniformity of the substrate W can be improved.

The embodiments disclosed this time should be considered illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

In each of the above-described embodiments, the plasma processing apparatus 1 that performs processing such as etching on the substrate W using capacitively coupled plasma as a plasma source has been described as an example, but the technology disclosed is not limited to this. . The plasma source is not limited to capacitively coupled plasma, and any plasma source such as inductively coupled plasma, microwave plasma, magnetron plasma, etc. can be used as long as it is an apparatus that processes a substrate W using plasma. .

REFERENCE SIGNS LIST 1 plasma processing apparatus 2 control section 10 plasma processing chamber 11 substrate support section 50 heat transfer gas supply hole 51 heat transfer gas supply path 52 heat transfer gas supply section 53 member 60 pin through hole 60a, 64b inclined surface 61 lift pin 62 drive mechanism 64 tip portion 111 body portion 111a central region 111b annular region 112 ring assembly 1110 base 1111 electrostatic chuck W substrate

Claims (15)

A substrate support disposed within the plasma processing vessel, comprising:
an electrostatic chuck comprising a support surface for supporting a substrate and formed of a dielectric;
a base that supports the electrostatic chuck;
The electrostatic chuck is
a heat transfer gas supply hole for supplying a heat transfer gas from the base side to the support surface;
a first member disposed in the heat transfer gas supply hole and made of a porous material whose porosity is controlled so as to match physical properties with the dielectric on the support surface;
substrate support. The substrate support section further has lift pins for transferring and receiving the substrate,
The electrostatic chuck further includes a pin through hole through which the lift pin passes,
The lift pin has a second member made of the porous material on the tip side,
The substrate support according to claim 1. The lift pin is configured such that a portion of the side surface of the second member is in circumferential contact with the side surface of the upper portion of the pin through hole.
A substrate support according to claim 2. the dielectric is alumina,
The substrate support part according to any one of claims 1-3. the physical property is a dielectric constant;
The substrate support part according to any one of claims 1-4. The porous material is zirconia,
A substrate support according to claim 5. The porosity is in the range of 61% to 79%,
A substrate support according to claim 6. The porous material is hafnia,
A substrate support according to claim 5. the porosity is in the range of 49% to 72%;
A substrate support according to claim 8 . the physical property is thermal conductivity;
The substrate support part according to any one of claims 1-4. The porous material is aluminum nitride,
A substrate support according to claim 10. The porosity is in the range of 72.3% to 85.0%,
12. A substrate support according to claim 11. The porous material is silicon carbide,
A substrate support according to claim 10. The porosity is in the range of 75.5% to 86.8%,
14. A substrate support according to claim 13. a plasma processing vessel;
a substrate support disposed within the plasma processing vessel;
The substrate support part
an electrostatic chuck comprising a support surface for supporting a substrate and formed of a dielectric;
a base that supports the electrostatic chuck;
The electrostatic chuck is
a heat transfer gas supply hole for supplying a heat transfer gas from the base side to the support surface;
a first member disposed in the heat transfer gas supply hole and made of a porous material whose porosity is controlled so as to match physical properties with the dielectric on the support surface;
Plasma processing equipment.

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