JP2023023187A - Photosensitive resin composition and semiconductor device - Google Patents

Abstract

To provide a photosensitive resin composition capable of giving a polyimide layer that can achieve both of, at high levels, improved adhesion between a rewiring layer (Cu layer) and the polyimide layer and reduced voids at an interface in contact with the polyimide layer after a high-temperature storage test.SOLUTION: A photosensitive resin composition contains (A) a polyimide precursor represented by a specific formula; (B) a disulfideazolesilane compound; and (C) a photopolymerization initiator. The (B) disulfideazolesilane compound contains at least one selected from the group consisting of an alkoxysilyl group, an alkoxysilylalkyl group, an alkoxysilylalkylcarbamoyl group, an amide group and an amino group.SELECTED DRAWING: None

Description

The present invention provides, for example, an insulating material for electronic parts, and a photosensitive resin composition used for forming relief patterns such as passivation films, buffer coat films, and interlayer insulating films in semiconductor devices, a method for producing polyimide using the same, and curing. The present invention relates to a relief pattern manufacturing method and a semiconductor device.

BACKGROUND ART Conventionally, polyimide resins, which have excellent heat resistance, electrical properties and mechanical properties, have been used as insulating materials for electronic parts, passivation films, surface protective films, interlayer insulating films, etc. for semiconductor devices. Among these polyimide resins, those provided in the form of a photosensitive polyimide precursor composition can easily form a heat-resistant relief pattern film by applying, exposing, developing and curing the composition for thermal imidation. can be formed. Such a photosensitive polyimide precursor composition has the feature of enabling a significant reduction in the process compared to conventional non-photosensitive polyimide materials.

By the way, semiconductor devices (hereinafter also referred to as "elements") are mounted on printed circuit boards by various methods according to their purposes. Conventional devices are generally manufactured by a wire bonding method in which thin wires are used to connect the external terminals (pads) of the device to the lead frame. However, today, when the speed of devices has increased and the operating frequency has reached GHz, the difference in the wiring length of each terminal in mounting affects the operation of the device. Therefore, in mounting devices for high-end applications, it has become necessary to accurately control the length of the mounting wiring. However, it has been difficult to meet the demand with wire bonding.

Therefore, flip-chip mounting has been proposed in which a rewiring layer is formed on the surface of a semiconductor chip, bumps (electrodes) are formed thereon, the chip is flipped over, and the chip is directly mounted on a printed circuit board. (See Patent Document 1, for example). In this flip-chip mounting, the wiring distance can be precisely controlled. For this reason, flip-chip mounting has been adopted for high-end devices that handle high-speed signals, and for mobile phones and the like due to its small mounting size, and the demand is rapidly expanding. When a polyimide material is used for flip-chip mounting, a metal wiring layer forming step is performed after the pattern of the polyimide layer is formed. A metal wiring layer is usually formed as follows. First, the surface of the polyimide layer is plasma-etched to roughen the surface, and then a metal layer serving as a seed layer for plating is formed by sputtering to a thickness of 1 μm or less. Thereafter, a metal wiring layer is formed by electrolytic plating using the metal layer as an electrode. At this time, generally, Ti is used as the metal for the seed layer, and Cu is used as the metal for the rewiring layer formed by electrolytic plating.

Such a metal rewiring layer is required to have high adhesion between the rewiring metal layer and the polyimide layer after the reliability test. The reliability test performed here includes, for example, a high-temperature storage test in which the device is stored for 168 hours at 150° C. in air with a humidity of 5%.

JP-A-2001-338947

However, when the conventional polyimide resin is used for the high-temperature storage test, part of the Cu atoms in the rewiring layer migrate to the polyimide layer (migration). As a result, there is a problem that voids (hereinafter also referred to as voids) are generated at the interface where the re-wired Cu layer contacts the polyimide layer. If voids occur at the interface between the Cu layer and the polyimide layer, the adhesion between the two will be reduced. Then, if the Cu layer and the polyimide layer are peeled off, there is a high possibility that a short circuit or disconnection will occur in the rewiring layer.

It is preferable that the adhesion between the rewiring layer (Cu layer) and the polyimide layer is high. That is, there is a trade-off relationship between ensuring the adhesion between the rewiring layer (Cu layer) and the polyimide layer and suppressing the migration of Cu atoms, and it has been difficult to achieve both at a high level.

The present invention has been devised in view of such conventional circumstances. That is, the object of the present invention is to improve the adhesion between the rewiring layer (Cu layer) and the polyimide layer and to suppress the generation of voids at the interface in contact with the polyimide layer after the high temperature storage test at a high level. A photosensitive resin composition that provides a polyimide layer that can be obtained, a method for producing polyimide using the photosensitive resin composition, a method for producing a cured relief pattern, and the adhesion between the rewiring layer (Cu layer) and the polyimide layer The object of the present invention is to provide a semiconductor device in which voids are less likely to occur at the interface where a Cu layer contacts a polyimide layer after a high temperature storage test, and short circuits and disconnections are less likely to occur after a high temperature storage test.

｛式中、Ｘは４価の有機基であり、Ｙは２価の有機基であり、Ｒ_１及びＲ_２は、それぞれ独立に、水素原子、下記一般式（Ｒ１）：

（一般式（Ｒ１）中、Ｒ_３、Ｒ_４、及びＲ_５は、それぞれ独立に、水素原子又は炭素数１～３の有機基であり、ｐは２～１０から選ばれる整数である。）で表される１価の有機基、又は炭素数１～４の飽和脂肪族基である。但し、Ｒ_１及びＲ_２の両者が同時に水素原子であることはない。｝。
［２］
前記一般式（Ａ１）において、前記Ｘが下記式（２）で表される構造を含む、［１］に記載の感光性樹脂組成物。

［３］
前記一般式（Ａ１）において、前記Ｙが下記式（８）で表される構造を含む、［１］又は［２］に記載の感光性樹脂組成物。

［４］
前記一般式（Ａ１）において、前記Ｙが下記式（９）で表される構造を含む、［１］又は［２］に記載の感光性樹脂組成物。

［５］
前記（Ａ）成分１００質量部に対する前記（Ｂ）成分の含有量が０．０５～５．０質量部である、［１］～［４］のいずれかに記載の感光性樹脂組成物。
［６］
［１］～［５］のいずれかに記載の感光性樹脂組成物を硬化するポリイミドの製造方法。
［７］
（１）［１］～［５］のいずれかに記載の感光性樹脂組成物を基板上に塗布して、感光性樹脂層を前記基板上に形成する工程と、
（２）前記感光性樹脂層を露光する工程と、
（３）露光後の前記感光性樹脂層を現像して、レリーフパターンを形成する工程と、
（４）前記レリーフパターンを加熱処理して、硬化レリーフパターンを形成する工程と、
を含む、硬化レリーフパターンの製造方法。
［８］
［７］に記載の硬化レリーフパターンの製造方法により得られる硬化レリーフパターンを有して成る、半導体装置。 The present inventors have found that the above object can be achieved by combining a polyimide precursor, a disulfide azole silane compound having a specific substituent or a side chain, and a photopolymerization initiator, and have completed the present invention. Completed. That is, the present invention is as follows.
[1]
Ingredients for:
(A) a polyimide precursor represented by the following general formula (A1);
(B) a disulfide azole silane compound; and (C) a photoinitiator;
including
The disulfide azole silane compound (B) contains at least one selected from the group consisting of an alkoxysilyl group, an alkoxysilylalkyl group, an alkoxysilylalkylcarbamoyl group, an amide group, and an amino group. A photosensitive resin composition:

{wherein X is a tetravalent organic group, Y is a divalent organic group, R ₁ and R ₂ are each independently a hydrogen atom, and the following general formula (R1):

(In general formula (R1), R ₃ , R ₄ and R ₅ are each independently a hydrogen atom or an organic group having 1 to 3 carbon atoms, and p is an integer selected from 2 to 10.) or a saturated aliphatic group having 1 to 4 carbon atoms. However, both R ₁ and R ₂ are not hydrogen atoms at the same time. }.
[2]
The photosensitive resin composition according to [1], wherein in the general formula (A1), the X has a structure represented by the following formula (2).

[3]
The photosensitive resin composition according to [1] or [2], wherein in the general formula (A1), the Y has a structure represented by the following formula (8).

[4]
The photosensitive resin composition according to [1] or [2], wherein in the general formula (A1), the Y has a structure represented by the following formula (9).

[5]
The photosensitive resin composition according to any one of [1] to [4], wherein the content of component (B) is 0.05 to 5.0 parts by mass with respect to 100 parts by mass of component (A).
[6]
[1] A method for producing a polyimide by curing the photosensitive resin composition according to any one of [5].
[7]
(1) a step of applying the photosensitive resin composition according to any one of [1] to [5] onto a substrate to form a photosensitive resin layer on the substrate;
(2) exposing the photosensitive resin layer;
(3) developing the photosensitive resin layer after exposure to form a relief pattern;
(4) heat-treating the relief pattern to form a cured relief pattern;
A method of manufacturing a cured relief pattern, comprising:
[8]
A semiconductor device comprising a cured relief pattern obtained by the method for producing a cured relief pattern according to [7].

According to the present invention, it is possible to simultaneously improve the adhesion between the rewiring layer (Cu layer) and the polyimide layer and suppress the generation of voids at the interface in contact with the polyimide layer after the high temperature storage test at a high level. A photosensitive resin composition that can obtain a polyimide layer, a method for forming a cured relief pattern using the photosensitive resin composition, high adhesion between a rewiring layer (Cu layer) and a polyimide layer, and a high temperature storage test After that, it is possible to provide a semiconductor device in which voids are less likely to occur at the interface where the Cu layer is in contact with the polyimide layer, and short circuits and disconnections are less likely to occur after the high temperature storage test.

The present embodiment will be specifically described below. Throughout this specification, structures represented by the same reference numerals in general formulas may be the same or different from each other when a plurality of structures are present in the molecule.

<Photosensitive resin composition>
The photosensitive resin composition of the present invention contains (A) a polyimide precursor, (B) a disulfide azole silane compound, and (C) a photopolymerization initiator.
According to such a photosensitive resin composition, the adhesion between the rewiring layer (Cu layer) and the polyimide layer is improved, and voids are eliminated by suppressing migration at the interface in contact with the polyimide layer after the high temperature storage test. It is possible to obtain a cured relief pattern that is compatible with suppression of generation at a high level.

｛式中、Ｘは４価の有機基であり、Ｙは２価の有機基であり、Ｒ_１及びＲ_２は、それぞれ独立に、水素原子、下記一般式（Ｒ１）：

（一般式（Ｒ１）中、Ｒ_３、Ｒ_４、及びＲ_５は、それぞれ独立に、水素原子又は炭素数１～３の有機基であり、ｐは２～１０から選ばれる整数である。）で表される１価の有機基、又は炭素数１～４の飽和脂肪族基である。但し、Ｒ_１及びＲ_２の両者が同時に水素原子であることはない。｝
上記（Ａ）ポリイミド前駆体の構造であると、（Ｃ）光重合開始剤の作用のよい硬化レリーフパターンを得ることができる。 [(A) polyimide precursor]
The (A) polyimide precursor according to this embodiment will be described.
(A) the polyimide precursor according to the present embodiment is a polyimide precursor represented by the following general formula (A1).

{wherein X is a tetravalent organic group, Y is a divalent organic group, R ₁ and R ₂ are each independently a hydrogen atom, and the following general formula (R1):

(In general formula (R1), R ₃ , R ₄ and R ₅ are each independently a hydrogen atom or an organic group having 1 to 3 carbon atoms, and p is an integer selected from 2 to 10.) or a saturated aliphatic group having 1 to 4 carbon atoms. However, both R ₁ and R ₂ are not hydrogen atoms at the same time. }
With the structure of the polyimide precursor (A), it is possible to obtain a cured relief pattern with good action of the photopolymerization initiator (C).

のそれぞれで表される構造が挙げられるが、これらに限定されるものではない。また、Ｘの構造は、１種でも２種以上の組み合わせでも構わない。 In the above general formula (A1), the tetravalent organic group represented by X is preferably an organic group having 6 to 40 carbon atoms, more preferably one of -COOR ₁ and -CONH- groups. are attached to the same aromatic ring and both are ortho-positioned to each other, either a tetravalent aromatic group or an alicyclic aliphatic group. In the former case, the aromatic ring to which the —COOR ₁ group is bonded and the aromatic ring to which the —COOR ₂ group is bonded may be the same aromatic ring or different aromatic rings. . An aromatic ring in this context is preferably a benzene ring.
The tetravalent organic group represented by X is more preferably the following formula:

Examples include, but are not limited to, structures represented by each of the above. Moreover, the structure of X may be one type or a combination of two or more types.

In the present embodiment, (A) the polyimide precursor preferably contains at least one structure in which the above X is represented by the following formulas (1) to (3) from the viewpoint of more effectively suppressing voids. .

｛上記式中、Ａは、メチル基（－ＣＨ_３）、エチル基（－Ｃ_２Ｈ_５）、プロピル基（－Ｃ_３Ｈ_７）、ブチル基（－Ｃ_４Ｈ_９）、又はトリフルオロメチル基（－ＣＦ_３）である。｝のそれぞれで表される構造が挙げられるが、これらに限定されるものではない。また、Ｙの構造は、１種でも２種以上の組み合わせでも構わない。 In general formula (A1) above, the divalent organic group represented by Y is preferably a C ₆ to C ₄₀ aromatic group, for example, the following formula:

{In the above formula, A is a methyl group (--CH ₃ ), an ethyl group (--C ₂ H ₅ ), a propyl group (--C ₃ H ₇ ), a butyl group (--C ₄ H ₉ ), or a trifluoromethyl It is a group (--CF ₃ ). }, but not limited thereto. Moreover, the structure of Y may be one type or a combination of two or more types.

｛上記式中、Ａは、メチル基（－ＣＨ_３）、エチル基（－Ｃ_２Ｈ_５）、プロピル基（－Ｃ_３Ｈ_７）、ブチル基（－Ｃ_４Ｈ_９）、又はトリフルオロメチル基（－ＣＦ_３）である。｝ In the present embodiment, (A) the polyimide precursor may contain at least one structure in which Y is represented by the following general formulas (4) to (7) from the viewpoint of more effectively suppressing voids. preferable.

{In the above formula, A is a methyl group (--CH ₃ ), an ethyl group (--C ₂ H ₅ ), a propyl group (--C ₃ H ₇ ), a butyl group (--C ₄ H ₉ ), or a trifluoromethyl It is a group (--CF ₃ ). }

上記一般式（Ｒ１）中のＲ_３は、水素原子又はメチル基であることが好ましく、Ｒ_４及びＲ_５は、感光特性の観点からそれぞれ水素原子であることが好ましい。ｐは、感光特性の観点から２以上１０以下の整数であることが好ましく、より好ましくは２以上４以下の整数である。 In the present embodiment, from the viewpoint of suppressing voids, (A) the polyimide precursor preferably includes a structure in which X is represented by formula (2). That is, (A) the polyimide precursor preferably contains a structure derived from ODPA (4,4'-oxydiphthalic anhydride).

R ₃ in the general formula (R1) is preferably a hydrogen atom or a methyl group, and R ₄ and R ₅ are each preferably a hydrogen atom from the viewpoint of photosensitivity. p is preferably an integer of 2 or more and 10 or less, and more preferably an integer of 2 or more and 4 or less, from the viewpoint of photosensitive characteristics.

を含有し、かつ、Ｙが下記式（８）：

を含有することが、密着性をより高めるとともに、ボイドをより確実に抑制することができ、特に好ましい。
In the present embodiment, (A) the polyimide precursor, X in the general formula (A1) is represented by the following formula (2):

and Y is the following formula (8):

is particularly preferable because it can further improve adhesion and more reliably suppress voids.

を含有し、かつ、Ｙが下記式（９）：

または、下記化学式（１０）：

を含有することが、密着性をより高めるとともに、ボイドをより確実に抑制することができ、特に好ましい。 In the present embodiment, (A) the polyimide precursor, X in the general formula (A1) is represented by the following formula (2):

and Y is the following formula (9):

Or the following chemical formula (10):

is particularly preferable because it can further improve adhesion and more reliably suppress voids.

(A) The weight-average molecular weight of the polyimide precursor is preferably 1,000 or more as a polystyrene conversion value by gel permeation chromatography from the viewpoint of heat resistance and mechanical properties of the film obtained after heat treatment. More preferably, it is 5,000 or more. The upper limit is preferably 100,000 or less. From the viewpoint of solubility in a developer, the weight average molecular weight is more preferably 50,000 or less. From the viewpoint of compatibility between sensitivity and resolution, it is preferably 6,000 to 40,000, more preferably 7,000 to 30,000, and particularly preferably 8,000 to 22,000.

[(A) Preparation method of polyimide precursor]
The ester bond type polyimide precursor, for example, first, a tetracarboxylic dianhydride having a desired tetravalent organic group X, and an alcohol having a photopolymerizable group (e.g., unsaturated double bond) A partially esterified tetracarboxylic acid (hereinafter also referred to as an acid/ester form) is prepared by reacting them. After that, this acid/ester form and diamines having a divalent organic group Y are subjected to amide polycondensation to obtain. Saturated aliphatic alcohols may optionally be used in combination with the alcohols having photopolymerizable groups.

(Preparation of acid/ester form)
In the present invention, the tetracarboxylic dianhydride having a tetravalent organic group X, which is suitably used for preparing the ester bond type polyimide precursor, includes, for example, pyromellitic anhydride, diphenyl ether-3, 3',4,4'-tetracarboxylic dianhydride, benzophenone-3,3',4,4'-tetracarboxylic dianhydride, biphenyl-3,3',4,4'-tetracarboxylic dianhydride anhydride, diphenylsulfone-3,3′,4,4′-tetracarboxylic dianhydride, diphenylmethane-3,3′,4,4′-tetracarboxylic dianhydride, 2,2-bis(3, 4-phthalic anhydride)propane, 2,2-bis(3,4-phthalic anhydride)-1,1,1,3,3,3-hexafluoropropane and the like, but are not limited thereto. not something. In addition, these may be used alone, or two or more of them may be used in combination.

In the present invention, alcohols having a photopolymerizable group that are suitably used for preparing the ester bond type polyimide precursor include, for example, 2-acryloyloxyethyl alcohol and 1-acryloyloxy-3-propyl alcohol. , 2-acrylamidoethyl alcohol, methylol vinyl ketone, 2-hydroxyethyl vinyl ketone, 2-hydroxy-3-methoxypropyl acrylate, 2-hydroxy-3-butoxypropyl acrylate, 2-hydroxy-3-phenoxypropyl acrylate, 2- Hydroxy-3-butoxypropyl acrylate, 2-hydroxy-3-t-butoxypropyl acrylate, 2-hydroxy-3-cyclohexyloxypropyl acrylate, 2-methacryloyloxyethyl alcohol, 1-methacryloyloxy-3-propyl alcohol, 2- methacrylamide ethyl alcohol, 2-hydroxy-3-methoxypropyl methacrylate, 2-hydroxy-3-butoxypropyl methacrylate, 2-hydroxy-3-phenoxypropyl methacrylate, 2-hydroxy-3-butoxypropyl methacrylate, 2-hydroxy-3 -t-butoxypropyl methacrylate, 2-hydroxy-3-cyclohexyloxypropyl methacrylate and the like.

Saturated aliphatic alcohols having 1 to 4 carbon atoms are preferred as the saturated aliphatic alcohols that can optionally be used together with the alcohols having a photopolymerizable group. Specific examples include methanol, ethanol, n-propanol, isopropanol, n-butanol, tert-butanol and the like.

The above tetracarboxylic dianhydride suitable for the present invention and the above alcohol are reacted preferably in the presence of a basic catalyst such as pyridine, preferably in a suitable reaction solvent at a temperature of 20 to 50° C. for 4 to 10 minutes. By stirring and mixing for a long time, the esterification reaction of the acid anhydride proceeds and the desired acid/ester can be obtained.

As the reaction solvent, those capable of completely dissolving the tetracarboxylic dianhydride and alcohol as starting materials and the acid/ester body as the product are preferred. More preferably, the solvent completely dissolves the polyimide precursor, which is the amide polycondensation product of the acid/ester compound and the diamine. For example, N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethylsulfoxide, tetramethylurea, ketones, esters, lactones, ethers, halogenated hydrocarbons, carbonization Hydrogens etc. can be mentioned. Specific examples of these include:
Examples of ketones include acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and the like;
Examples of esters include methyl acetate, ethyl acetate, butyl acetate, diethyl oxalate, and the like;

Lactones such as γ-butyrolactone;
Examples of ethers include ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, tetrahydrofuran, and the like;
Halogenated hydrocarbons include, for example, dichloromethane, 1,2-dichloroethane, 1,4-dichlorobutane, chlorobenzene, o-dichlorobenzene;
Examples of hydrocarbons include hexane, heptane, benzene, toluene, xylene, etc.
Each can be mentioned. These may be used alone or in combination of two or more as needed.

(Preparation of polyimide precursor)
A suitable dehydration condensation agent is added to the acid/ester compound (typically in a solution state dissolved in the reaction solvent), preferably under ice cooling, and mixed to convert the acid/ester compound into a polyanhydride. and Then, a diamine having a divalent organic group Y, which is preferably used in the present invention, is separately dissolved or dispersed in a solvent and added dropwise thereto, and the two are subjected to amide polycondensation to obtain the desired polyimide precursor. can be obtained. Diaminosiloxanes may be used in combination with the diamines having the divalent organic group Y described above.
Examples of the dehydration condensation agent include dicyclohexylcarbodiimide, 1-ethoxycarbonyl-2-ethoxy-1,2-dihydroquinoline, 1,1-carbonyldioxy-di-1,2,3-benzotriazole, N,N '-disuccinimidyl carbonate and the like.
As described above, the intermediate polyacid anhydride is obtained.

In the present invention, the diamines having a divalent organic group Y that are suitably used for the reaction with the polyacid anhydride obtained as described above include, for example, p-phenylenediamine, m-phenylenediamine, 4, 4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4 , 4′-diaminodiphenyl sulfone, 3,4′-diaminodiphenyl sulfone, 3,3′-diaminodiphenyl sulfone, 4,4′-diaminobiphenyl, 3,4′-diaminobiphenyl, 3,3′-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane,

1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, bis[4-(4-aminophenoxy)phenyl ] sulfone, bis[4-(3-aminophenoxy)phenyl]sulfone, 4,4-bis(4-aminophenoxy)biphenyl, 4,4-bis(3-aminophenoxy)biphenyl, bis[4-(4- aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, 1,4-bis(4-aminophenyl)benzene, 1,3-bis(4-aminophenyl)benzene, 9,10 -bis(4-aminophenyl)anthracene, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis[4-(4-amino phenoxy)phenyl)propane, 2,2-bis[4-(4-aminophenoxy)phenyl)hexafluoropropane, 1,4-bis(3-aminopropyldimethylsilyl)benzene, ortho-tolysine sulfone, 9,9- bis(4-aminophenyl)fluorene and the like;
and those in which some of the hydrogen atoms on these benzene rings are substituted with a methyl group, an ethyl group, a hydroxymethyl group, a hydroxyethyl group, a halogen atom, or the like;
and mixtures thereof.

Specific examples of the substituent include 3,3′-dimethyl-4,4′-diaminobiphenyl, 2,2′-dimethyl-4,4′-diaminobiphenyl, 2,2′-bis(trifluoromethyl ) benzidine, 3,3′-dimethyl-4,4′-diaminodiphenylmethane, 2,2′-dimethyl-4,4′-diaminodiphenylmethane, 3,3′-dimethytoxy-4,4′-diaminobiphenyl, 3, 3′-dichloro-4,4′-diaminobiphenyl and the like; and mixtures thereof and the like. Diamines are not limited to the above examples.

For the purpose of improving the adhesion between the coating film formed from the photosensitive resin composition of the present invention and various substrates, the diaminosiloxanes are used in the preparation of (A) the photosensitive polyimide precursor. It is used in combination with diamines containing an organic group Y. Specific examples of such diaminosiloxanes include 1,3-bis(3-aminopropyl)tetramethyldisiloxane and 1,3-bis(3-aminopropyl)tetraphenyldisiloxane. can.

After the completion of the amide polycondensation reaction, water-absorbing by-products of the dehydration condensation agent coexisting in the reaction solution are filtered out if necessary, and the solution containing the polymer components is added with a suitable poor solvent such as water, fat, or the like. Group lower alcohol, mixture thereof, etc.) is added to precipitate the polymer component, and if necessary, the polymer is purified by repeating operations such as redissolution and reprecipitation, followed by vacuum drying. Thus, the desired polyimide precursor is isolated. In order to improve the degree of purification, the polymer solution may be passed through a column packed with anion and/or cation exchange resins swollen with a suitable organic solvent to remove ionic impurities.

From the viewpoint of the heat resistance and mechanical properties of the film obtained after the heat treatment, the weight average molecular weight of the ester bond type polyimide precursor is preferably 1,000 or more as a polystyrene conversion value by gel permeation chromatography. More preferably, it is 5,000 or more. The upper limit is preferably 100,000 or less. From the viewpoint of solubility in a developer, the weight average molecular weight is more preferably 50,000 or less. From the viewpoint of compatibility between sensitivity and resolution, it is preferably 6,000 to 40,000, more preferably 7,000 to 30,000, and particularly preferably 8,000 to 22,000.
Tetrahydrofuran or N-methyl-2-pyrrolidone is recommended as a developing solvent for gel permeation chromatography. The molecular weight is determined from a calibration curve prepared using standard monodisperse polystyrene. As the standard monodisperse polystyrene, it is recommended to select STANDARD SM-105, an organic solvent-based standard sample manufactured by Showa Denko.

[(B) Disulfide azole silane compound]
(B) the disulfide azole silane compound according to the present embodiment has a structure in which two azole skeletons are disulfide bonded (-SS-) and a silicon (Si)-containing moiety derived from silane, and It contains at least one selected from the group consisting of an alkoxysilyl group, an alkoxysilylalkyl group, an alkoxysilylalkylcarbamoyl group, an amido group and an amino group.

(B) In disulfide azole silane compounds, silane-derived silicon (Si)-containing moieties may be present as substituents for at least one hydrogen atom of the azole backbone, e.g., alkoxysilyl groups, as listed above, It may be at least one selected from the group consisting of an alkoxysilylalkyl group and an alkoxysilylalkylcarbamoyl group. Alternatively, in (B) the disulfide azole silane compound, the silane-derived silicon (Si)-containing moieties may be Si-containing groups other than alkoxysilyl groups, alkoxysilylalkyl groups, and alkoxysilylalkylcarbamoyl groups, and optionally can be incorporated into (B) the disulfide azole silane compound via the linking group of

Two azole skeletons sandwiching a disulfide bond (-S-S-) may each contain a five-membered heterocyclic ring structure containing one or more nitrogens (N), may be the same structure, or may be a heterogeneous structure, at least one of , a Si-containing moiety derived from silane, or at least one selected from the group consisting of an alkoxysilyl group, an alkoxysilylalkyl group, an alkoxysilylalkylcarbamoyl group, an amido group and an amino group.

Examples of the azole skeleton include, but are not limited to, 1H-azole (pyrrole), 2H-pyrrole, 3H-pyrrole, imidazole, triazoles, tetrazole, pyrazole, etc., or skeletons derived from these, or similar Skeletons include, the imidazole skeleton also includes benzimidazole, and analogous skeletons also include isothiazole, isoxazole, etc. as heteroatom-containing rings. Among them, imidazole, benzimidazole, 1,2,3-triazole and 1,2,4-triazole are preferred.

at least one hydrogen atom of the azole skeleton is substituted with at least one substituent selected from the group consisting of the alkoxysilyl groups, alkoxysilylalkyl groups, alkoxysilylalkylcarbamoyl groups, amido groups and amino groups listed above; or is bound to at least one substituent through an optional linking group. Linking groups include alkylene, ester, ether, —NHCO—, and the like.

At least one substituent selected from the group consisting of an alkoxysilyl group, an alkoxysilylalkyl group, an alkoxysilylalkylcarbamoyl group, an amido group and an amino group may be present on at least one of the two azole skeletons, and both preferably present in Also, the same or different substituents may be present at both ends of the disulfide bond (-S—S—), and preferably at least one pair of the same kind of substituents is present.

The alkoxysilyl group has 1 to 3 alkoxy groups, and the number of carbon atoms in the alkoxy group may be 1 to 10, 1 to 8, 1 to 6, 1 to 4, 1 to 3, 1 or 2, and carbon When the number is 3 or more, it may be a straight chain or a branched chain. More particularly, alkoxysilyl groups are, for example, -Si(OCH ₃ ) ₃ , -Si(OCH ₃ ) ₂ H, -Si(OCH ₃ )H ₂ , -Si(OC ₂ H ₅ ) ₃ , -Si (OC ₂ H ₅ ) ₂ H, —Si(OC ₂ H ₅ )H ₂ and the like.

As for the alkoxysilylalkyl group, the alkoxysilyl moiety may be the same as the above alkoxysilyl group, and the alkyl moiety has 1 to 10 carbon atoms, 1 to 8 carbon atoms, 1 to 6 carbon atoms, 1 to 4 carbon atoms, 1 to 3 carbon atoms, 1 or It may be an alkyl group of 2, and if it has 3 or more carbon atoms, it may be chain or cyclic, or linear or branched.

As for the alkoxysilylalkylcarbamoyl group, the alkoxysilylalkyl moiety may be the same as the alkoxysilylalkyl group described above, and can be linked to the azole skeleton or linking group via the carbamoyl group (--CO--NH--).

The amide group can be, for example, a _-CONH2 group, a _-CONH2- containing group, a -NHCO-containing group, -CONHR, where R represents an organic group, etc., and the organic group R can be an alkyl group, The alkoxysilyl group, alkoxysilylalkyl group, alkoxysilylalkylcarbamoyl group described above, and other substituents described later may be used.

The amino group may be, for example, a primary amino group, a secondary amino group, a tertiary amino group, an ammonium base, or the like, and may be further substituted, and the substituent may be an alkyl group or the like. -NH ₂ , -NHCH ₃ , -N(CH ₃ ) ₂ , -NHC ₂ H ₅ , -N(C ₂ H ₅ ) ₂ and the like.

A substituent selected from the above group may be bonded to a carbon atom on the azole ring, or may be bonded to a nitrogen atom.

The disulfide azole silane compound (B) is not particularly limited as long as it has the above substituents bonded to the azole ring, but the azole ring may also have other substituents. Other substituents include aliphatic groups such as methyl group, ethyl group and undecane group, alicyclic groups and aromatic groups such as phenyl group. Among them, methyl, ethyl, or phenyl is preferable from the viewpoint of easy introduction into the azole ring. Other substituents may be absent, singular, or plural, and if plural, they are preferably different substituents. If more than one, a combination of methyl and ethyl or a combination of methyl and phenyl is desirable.

(B) As the disulfide azole silane compound, from the viewpoint of improving the adhesion between the rewiring layer (Cu layer) and the polyimide layer, and from the viewpoint of suppressing the generation of voids at the interface in contact with the polyimide layer after the high temperature storage test, Those having a structure represented by any one of the following are preferable.

2,2′-dithiobis{1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-imidazole}:

2,2′-dithiobis{1-[3-(triethoxysilyl)propylcarbamoyl]-1H-imidazole}:

2,2′-dithiobis{1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-benzimidazole}:

2,2′-dithiobis{1-[3-(triethoxysilyl)propylcarbamoyl]-1H-benzimidazole}:

3,3′-dithiobis{1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole}:

3,3′-dithiobis{1-[3-(triethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole}:

3,3′-dithiobis{5-amino-1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole}:

3,3′-dithiobis{5-amino-1-[3-(triethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole}:

4,4′-dithiobis{1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-1,2,3-triazole}:

4,4′-dithiobis{1-[3-(triethoxysilyl)propylcarbamoyl]-1H-1,2,3-triazole}:

These disulfide azole silane compounds may be used alone, or two or more of them may be mixed and used as necessary.

Among these, 3,3′-dithiobis{1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole}, 3,3′-dithiobis{1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole}, ethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole}, 3,3′-dithiobis{5-amino-1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-1,2,4 -triazole} and 3,3′-dithiobis{5-amino-1-[3-(triethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole}, 3,3′-dithiobis{1 -[3-(trimethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole} and 3,3′-dithiobis{1-[3-(triethoxysilyl)propylcarbamoyl]-1H-1, 2,4-triazole} is more preferred.

Although it is not clear why the addition of the disulfide azole silane compound in the present embodiment improves adhesion, the carbonyl group of the polyimide resin and the alkoxysilyl group and alkoxysilylalkyl of the disulfide azole silane compound according to the present embodiment are combined. At least one selected from the group consisting of a group, an alkoxysilylalkylcarbamoyl group, an amido group and an amino group forms a hydrogen bond, which is presumed to improve adhesion.

Although the reason why copper voids can be suppressed by adding a disulfide azole silane compound in the present embodiment is not clear, the copper atom of the substrate, the nitrogen atom of the azole skeleton, and the sulfur atom of the disulfide form a coordinate bond. It is presumed that the migration of copper atoms is suppressed and the formation of copper voids is suppressed.

In particular, the photosensitive resin composition of the present embodiment contains (B) a disulfide azole silane compound in the resin composition, that is, when the compound is applied as a surface treatment agent to the substrate surface. Compared to , the polyimide resin and the Cu layer can be adhered to each other more firmly, and the migration of Cu atoms can be suppressed more effectively, so that a more remarkable effect can be obtained.

Further, in the photosensitive resin composition of the present embodiment, the total content of (B) the disulfide azole silane compound is 0.05 to 5.0 parts by mass with respect to 100 parts by mass of the (A) polyimide precursor component. and more preferably 0.1 to 3 parts by mass.
If the content of the disulfide azole silane compound (B) is too small, the effects of the present invention cannot be sufficiently obtained, and if it is too large, the adhesion will rather be reduced.

[(C) Photoinitiator]
The (C) photopolymerization initiator according to the present embodiment will be described.
As the photopolymerization initiator according to this embodiment, a photopolymerization initiator that generates radicals by absorbing and decomposing a specific wavelength is preferably used.
(C) Photopolymerization initiators include benzophenone, methyl o-benzoylbenzoate, 4-benzoyl-4′-methyldiphenylketone, dibenzylketone, benzophenone derivatives such as fluorenone, 2,2′-diethoxyacetophenone, 2- Acetophenone derivatives such as hydroxy-2-methylpropiophenone and 1-hydroxycyclohexylphenyl ketone, thioxanthone derivatives such as thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone and diethylthioxanthone, benzyl, benzyldimethylketal, benzyl-β-methoxy Benzyl derivatives such as ethyl acetal, benzoin, benzoin derivatives such as benzoin methyl ether, 1-phenyl-1,2-butanedione-2-(o-methoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2- (o-methoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(o-benzoyl)oxime, 1 ,3-diphenylpropanetrione-2-(o-ethoxycarbonyl)oxime, 1-phenyl-3-ethoxypropanetrione-2-(o-benzoyl)oxime and other oximes, N-arylglycine such as N-phenylglycine , peroxides such as benzoyl perchloride, aromatic biimidazoles, titanocenes, and photoacid generators such as α-(n-octane sulfonyloxyimino)-4-methoxybenzyl cyanide. However, it is not limited to these. Among the above photopolymerization initiators, oximes are more preferable, particularly in terms of photosensitivity.

（式中、Ｒ３９はメチル基又はフェニル基であり、Ｒ４０はそれぞれ独立に炭素数１～１２の１価の有機基を表す。）

（式中、Ｚはイオウ又は酸素原子であり、そしてＲ₄₁はメチル基、フェニル基または２価の有機基を表し、Ｒ₄₂～Ｒ₄₄は、それぞれ独立に、水素原子または１価の有機基を表す。）。

Among the above oxime photopolymerization initiators, those having a structure represented by any one of the following formulas (C1) to (C6) are most preferable from the viewpoint of adhesiveness.

(In the formula, R39 is a methyl group or a phenyl group, and each R40 independently represents a monovalent organic group having 1 to 12 carbon atoms.)

(In the formula, Z is a sulfur or oxygen atom, R ₄₁ represents a methyl group, a phenyl group or a divalent organic group, and R ₄₂ to R ₄₄ each independently represent a hydrogen atom or a monovalent organic group. represents ).

[(D) Crosslinking agent]
As the cross-linking agent (D) optionally used in the present invention, any compound having a plurality of functional groups in the molecule can be mentioned. Examples of functional groups include acrylic, methacrylic, epoxy, methylol, allyl, vinyl, and maleimide groups.

The amount of the cross-linking agent (D) is preferably 1 to 40 parts by mass, more preferably 2 to 30 parts by mass, per 100 parts by mass of the resin (A).

In the photosensitive resin composition of the invention, the total content of (D) the cross-linking agent is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the (A) polyimide precursor component.

[(E) other components]
The photosensitive resin composition of the present invention may further contain components other than the above components (A) to (D).
The photosensitive resin composition of the present invention is typically used as a liquid photosensitive resin composition formed into a varnish by dissolving each of the above components and optionally further optional components in a solvent. . Therefore, (D) other components include solvents, and for example, resins other than the above (A) photosensitive polyimide precursor, sensitizers, monomers having photopolymerizable unsaturated bonds, adhesion aids , thermal polymerization inhibitors, azole compounds, hindered phenol compounds, and the like.

Examples of the solvent include polar organic solvents and alcohols.
As the solvent, it is preferable to use a polar organic solvent from the viewpoint of solubility in (A) the photosensitive polyimide precursor. Specifically, for example, N,N-dimethylformamide, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N,N-dimethylacetamide, dimethylsulfoxide, diethylene glycol dimethyl ether, cyclopentanone, γ-butyrolactone, α-acetyl-γ-butyrolactone, tetramethylurea, 1,3-dimethyl-2-imidazolinone, N-cyclohexyl-2-pyrrolidone and the like, and these can be used alone or in combination of two or more.

As the solvent in the present invention, a solvent containing alcohols is preferable from the viewpoint of improving the storage stability of the photosensitive resin composition. Alcohols that can be suitably used are typically alcohols having an alcoholic hydroxyl group in the molecule and no olefinic double bond. Specific examples include alkyl alcohols such as methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, isobutyl alcohol and tert-butyl alcohol;
Lactate esters such as ethyl lactate;

Propylene glycol-1-methyl ether, propylene glycol-2-methyl ether, propylene glycol-1-ethyl ether, propylene glycol-2-ethyl ether, propylene glycol-1-(n-propyl) ether, propylene glycol-2-( Propylene glycol monoalkyl ethers such as n-propyl)ether;
monoalcohols such as ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol-n-propyl ether;
2-hydroxyisobutyric acid esters;
Dialcohols such as ethylene glycol and propylene glycol can be mentioned. Among these, lactic acid esters, propylene glycol monoalkyl ethers, 2-hydroxyisobutyric acid esters, and ethyl alcohol are preferred, and ethyl lactate, propylene glycol-1-methyl ether, propylene glycol-1-ethyl ether, and propylene glycol-1-(n-propyl) ether are more preferred.

The solvent is, for example, 30 to 1500 parts by mass, preferably 100 to 1,000 parts by mass, based on 100 parts by mass of the polyimide precursor (A), depending on the desired coating thickness and viscosity of the photosensitive resin composition. It can be used in the range of parts by mass. When the solvent contains an alcohol having no olefinic double bond, the content of the alcohol having no olefinic double bond in the total solvent is preferably 5 to 50% by mass, more preferably It is preferably 10 to 30% by mass. When the content of the alcohol having no olefinic double bond is 5% by mass or more, the storage stability of the photosensitive resin composition is improved, and when it is 50% by mass or less, (A) dissolution of the polyimide precursor becomes better.

The photosensitive resin composition according to the present embodiment may further contain a resin component other than the polyimide precursor (A) described above. Examples of resin components that can be contained include polyimide, polyoxazole, polyoxazole precursors, phenol resins, polyamides, epoxy resins, siloxane resins, and acrylic resins. The blending amount of these resin components is preferably in the range of 0.01 to 20 parts by mass with respect to 100 parts by mass of the polyimide precursor (A).

A sensitizer can be arbitrarily added to the photosensitive resin composition according to the present embodiment in order to improve photosensitivity. Examples of the sensitizer include Michler's ketone, 4,4'-bis(diethylamino)benzophenone, 2,5-bis(4'-diethylaminobenzal)cyclopentane, 2,6-bis(4'-diethylaminobenzal). ) cyclohexanone, 2,6-bis(4′-diethylaminobenzal)-4-methylcyclohexanone, 4,4′-bis(dimethylamino)chalcone, 4,4′-bis(diethylamino)chalcone, p-dimethylamino thinner mylideneindanone, p-dimethylaminobenzylideneindanone, 2-(p-dimethylaminophenylbiphenylene)-benzothiazole, 2-(p-dimethylaminophenylvinylene)benzothiazole, 2-(p-dimethylaminophenylvinylene) isonaphthothiazole, 1,3-bis(4′-dimethylaminobenzal)acetone, 1,3-bis(4′-diethylaminobenzal)acetone,

3,3′-carbonyl-bis(7-diethylaminocoumarin), 3-acetyl-7-dimethylaminocoumarin, 3-ethoxycarbonyl-7-dimethylaminocoumarin, 3-benzyloxycarbonyl-7-dimethylaminocoumarin, 3- Methoxycarbonyl-7-diethylaminocoumarin, 3-ethoxycarbonyl-7-diethylaminocoumarin, N-phenyl-N'-ethylethanolamine, N-phenyldiethanolamine, Np-tolyldiethanolamine, N-phenylethanolamine, 4-morpholino Benzophenone, isoamyl dimethylaminobenzoate, isoamyl diethylaminobenzoate, 2-mercaptobenzimidazole, 1-phenyl-5-mercaptotetrazole, 2-mercaptobenzothiazole, 2-(p-dimethylaminostyryl)benzoxazole, 2-(p -dimethylaminostyryl)benzthiazole, 2-(p-dimethylaminostyryl)naphtho(1,2-d)thiazole, 2-(p-dimethylaminobenzoyl)styrene, diphenylacetamide, benzanilide, N-methylacetanilide, 3' , 4′-dimethylacetanilide and the like. These can be used singly or in combination, for example of 2 to 5 types.

The blending amount when the photosensitive resin composition contains a sensitizer for improving photosensitivity is preferably 0.1 to 25 parts by mass with respect to 100 parts by mass of (A) the polyimide precursor. .

In order to improve the resolution of the relief pattern, the resin composition of the present invention may optionally contain a photopolymerizable unsaturated bond-containing monomer. As such a monomer, a (meth)acrylic compound that undergoes a radical polymerization reaction with a photopolymerization initiator is preferable. Mono- or di(meth)acrylates of ethylene glycol or polyethylene glycol, including but not limited to diethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate among others;
mono- or di(meth)acrylates of propylene glycol or polypropylene glycol;
mono-, di- or tri(meth)acrylates of glycerol;
cyclohexane di(meth)acrylate;
Diacrylate and dimethacrylate of 1,4-butanediol, di(meth)acrylate of 1,6-hexanediol;

di(meth)acrylates of neopentyl glycol;
mono- or di(meth)acrylates of bisphenol A;
benzene trimethacrylate;
isobornyl (meth)acrylate;
acrylamide and its derivatives;
methacrylamide and its derivatives;
trimethylolpropane tri(meth)acrylate;
di- or tri(meth)acrylates of glycerol;
di-, tri- or tetra-(meth)acrylates of pentaerythritol;
and compounds such as ethylene oxide or propylene oxide adducts of these compounds.

When the photosensitive resin composition according to the present embodiment contains the above monomer having a photopolymerizable unsaturated bond for improving the resolution of the relief pattern, the blending amount is (A) the polyimide precursor It is preferably 1 to 50 parts by mass with respect to 100 parts by mass.

In order to improve the adhesiveness between the film formed from the photosensitive resin composition according to the present embodiment and the base material, the photosensitive resin composition may optionally contain an adhesion aid. Examples of adhesion promoters include γ-aminopropyldimethoxysilane, N-(β-aminoethyl)-γ-aminopropylmethyldimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, 3-methacryloxypropyldimethoxymethylsilane, 3-methacryloxypropyltrimethoxysilane, dimethoxymethyl-3-piperidinopropylsilane, diethoxy-3-glycidoxypropylmethylsilane, N-(3-diethoxymethylsilylpropyl ) succinimide, N-[3-(triethoxysilyl)propyl]phthalamic acid, benzophenone-3,3′-bis(N-[3-triethoxysilyl]propylamide)-4,4′-dicarboxylic acid, benzene- Silanes such as 1,4-bis(N-[3-triethoxysilyl]propylamide)-2,5-dicarboxylic acid, 3-(triethoxysilyl)propyl succinic anhydride, and N-phenylaminopropyltrimethoxysilane Coupling agents, and aluminum-based adhesion aids such as aluminum tris(ethylacetoacetate), aluminum tris(acetylacetonate), ethylacetoacetate aluminum diisopropylate, and the like.

Among these adhesion promoters, the silane coupling agent is more preferable from the viewpoint of adhesion. When the photosensitive resin composition contains an adhesion aid, the blending amount is preferably in the range of 0.5 to 25 parts by mass with respect to 100 parts by mass of the (A) polyimide precursor.

When the photosensitive resin composition according to the present embodiment is in a solution state particularly containing a solvent, a thermal polymerization inhibitor is added to the photosensitive resin composition in order to improve the stability of the viscosity and photosensitivity during storage. can be arbitrarily blended. Thermal polymerization inhibitors include, for example, hydroquinone, N-nitrosodiphenylamine, p-tert-butylcatechol, phenothiazine, N-phenylnaphthylamine, ethylenediaminetetraacetic acid, 1,2-cyclohexanediaminetetraacetic acid, glycol etherdiaminetetraacetic acid, 2 , 6-di-tert-butyl-p-methylphenol, 5-nitroso-8-hydroxyquinoline, 1-nitroso-2-naphthol, 2-nitroso-1-naphthol, 2-nitroso-5-(N-ethyl- N-sulfopropylamino)phenol, N-nitroso-N-phenylhydroxylamine ammonium salt, N-nitroso-N(1-naphthyl)hydroxylamine ammonium salt and the like are used.

The amount of the thermal polymerization inhibitor to be added to the photosensitive resin composition is preferably in the range of 0.005 to 12 parts by mass with respect to 100 parts by mass of the photosensitive polyimide precursor (A).

When the substrate to which the resin composition according to the present embodiment is applied is, for example, a substrate made of copper or a copper alloy, an azole compound can be arbitrarily blended in order to suppress discoloration of the copper surface. Examples of azole compounds include 1H-triazole, 5-methyl-1H-triazole, 5-ethyl-1H-triazole, 4,5-dimethyl-1H-triazole, 5-phenyl-1H-triazole, 4-t-butyl- 5-phenyl-1H-triazole, 5-hydroxyphenyl-1H-triazole, phenyltriazole, p-ethoxyphenyltriazole, 5-phenyl-1-(2-dimethylaminoethyl)triazole, 5-benzyl-1H-triazole, hydroxy Phenyltriazole, 1,5-dimethyltriazole, 4,5-diethyl-1H-triazole, 1H-benzotriazole, 2-(5-methyl-2-hydroxyphenyl)benzotriazole, 2-[2-hydroxy-3,5 -bis(α,α-dimethylbenzyl)phenyl]-benzotriazole, 2-(3,5-di-t-butyl-2-hydroxyphenyl)benzotriazole, 2-(3-t-butyl-5-methyl- 2-hydroxyphenyl)-benzotriazole, 2-(3,5-di-t-amyl-2-hydroxyphenyl)benzotriazole, 2-(2'-hydroxy-5'-t-octylphenyl)benzotriazole, hydroxy phenylbenzotriazole, tolyltriazole, 5-methyl-1H-benzotriazole, 4-methyl-1H-benzotriazole, 4-carboxy-1H-benzotriazole, 5-carboxy-1H-benzotriazole, 1H-tetrazole, 5-methyl -1H-tetrazole, 5-phenyl-1H-tetrazole, 5-amino-1H-tetrazole, 1-methyl-1H-tetrazole and the like. Particularly preferred is one or more selected from tolyltriazole, 5-methyl-1H-benzotriazole, and 4-methyl-1H-benzotriazole. These azole compounds may be used singly or as a mixture of two or more.

When the photosensitive resin composition according to the present embodiment contains the azole compound, the blending amount is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the polyimide precursor (A). From the viewpoint of sensitivity characteristics, 0.5 to 5 parts by mass is more preferable. When the amount of the azole compound (A) blended with respect to 100 parts by mass of the polyimide precursor is 0.1 parts by mass or more, when the photosensitive resin composition according to the present embodiment is formed on copper or a copper alloy, Discoloration of the copper or copper alloy surface is suppressed, and on the other hand, when it is 10 parts by mass or less, the excellent photosensitivity of the photosensitive resin composition is maintained.

In order to suppress the discoloration of the copper surface, a hindered phenol compound can be arbitrarily blended instead of the azole compound or together with the azole compound. Hindered phenol compounds include, for example, 2,6-di-t-butyl-4-methylphenol, 2,5-di-t-butyl-hydroquinone, octadecyl-3-(3,5-di-t-butyl -4-hydroxyphenyl)propionate, isooctyl-3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 4,4′-methylenebis(2,6-di-t-butylphenol), 4,4′-thio-bis(3-methyl-6-t-butylphenol), 4,4′-butylidene-bis(3-methyl-6-t-butylphenol), triethylene glycol-bis[3-(3 -t-butyl-5-methyl-4-hydroxyphenyl)propionate], 1,6-hexanediol-bis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], 2,2 -thio-diethylenebis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate],

N,N'hexamethylenebis(3,5-di-t-butyl-4-hydroxy-hydrocinnamamide), 2,2'-methylene-bis(4-methyl-6-t-butylphenol), 2, 2′-methylene-bis(4-ethyl-6-t-butylphenol), pentaerythrityl-tetrakis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], tris-(3, 5-di-t-butyl-4-hydroxybenzyl)-isocyanurate, 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl-4-hydroxybenzyl)benzene , 1,3,5-tris(3-hydroxy-2,6-dimethyl-4-isopropylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1 , 3,5-tris(4-t-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1 , 3,5-tris(4-s-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1 , 3,5-tris[4-(1-ethylpropyl)-3-hydroxy-2,6-dimethylbenzyl]-1,3,5-triazine-2,4,6-(1H,3H,5H)- trion,

1,3,5-tris[4-triethylmethyl-3-hydroxy-2,6-dimethylbenzyl]-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1 , 3,5-tris(3-hydroxy-2,6-dimethyl-4-phenylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1,3 ,5-tris(4-t-butyl-3-hydroxy-2,5,6-trimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1 , 3,5-tris(4-t-butyl-5-ethyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H) -trione, 1,3,5-tris(4-t-butyl-6-ethyl-3-hydroxy-2-methylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H, 5H)-trione, 1,3,5-tris(4-t-butyl-6-ethyl-3-hydroxy-2,5-dimethylbenzyl)-1,3,5-triazine-2,4,6-( 1H,3H,5H)-trione, 1,3,5-tris(4-t-butyl-5,6-diethyl-3-hydroxy-2-methylbenzyl)-1,3,5-triazine-2,4 ,6-(1H,3H,5H)-trione,

1,3,5-tris(4-t-butyl-3-hydroxy-2-methylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1, 3,5-tris(4-t-butyl-3-hydroxy-2,5-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1, 3,5-tris(4-t-butyl-5-ethyl-3-hydroxy-2-methylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione and the like are mentioned, but are not limited to these. Among these, 1,3,5-tris(4-t-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H )-trione and the like are particularly preferred.

The amount of the hindered phenol compound is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the (A) polyimide precursor, and from the viewpoint of photosensitivity characteristics, it is 0.5 to 10 parts by mass. is more preferred. When the amount of the hindered phenol compound (A) per 100 parts by mass of the polyimide precursor is 0.1 parts by mass or more, for example, when the photosensitive resin composition of the present invention is formed on copper or a copper alloy, Discoloration and corrosion of copper or copper alloys are prevented, while excellent photosensitivity of the photosensitive resin composition is maintained when the content is 20 parts by mass or less.

The photosensitive resin composition of the present invention comprises 100 parts by mass of (A) polyimide precursor and 0.05 to 5.0 parts by mass of (B) disulfide azole based on 100 parts by mass of (A) polyimide precursor. It preferably contains a silane compound and 0.1 to 20 parts by mass of (C) a photopolymerization initiator. As a result, the photosensitive resin composition exhibits particularly good sensitivity, and can provide a cured relief pattern in which deterioration of adhesion to copper or copper alloy can be more effectively suppressed.

<Method for manufacturing cured relief pattern>
The present invention also provides a method of manufacturing a cured relief pattern.
A method for producing an effect relief pattern according to the invention comprises, for example, the following steps:
(1) a coating step of applying the above-described photosensitive resin composition of the present invention onto a substrate to form a photosensitive resin layer on the substrate;
(2) an exposure step of exposing the photosensitive resin layer;
(3) a developing step of developing the exposed photosensitive resin layer to form a relief pattern;
(4) The relief pattern is heat-treated to form a hardened relief pattern, and a heating step is performed in the order described above.
Typical aspects of each step are described below.

(1) Coating step In this step, the photosensitive resin composition of the present invention is applied onto a substrate, and if necessary, dried to form a photosensitive resin layer.
As the substrate, for example, a metal substrate made of silicon, aluminum, copper, copper alloy, etc.;
Resin substrates such as epoxy, polyimide, and polybenzoxazole;
A substrate in which a metal circuit is formed on the resin substrate;
A substrate or the like in which a plurality of metals or metals and resins are laminated in multiple layers can be used.
As the coating method, a method conventionally used for coating a photosensitive resin composition, for example, a method of coating with a spin coater, a bar coater, a blade coater, a curtain coater, a screen printer, or the like, or a method of spray coating with a spray coater. method etc. can be used.

If necessary, the photosensitive resin composition film can be dried. As a drying method, methods such as air drying, heat drying using an oven or a hot plate, and vacuum drying are used. Moreover, the drying of the coating film is desirably carried out under such conditions that imidization of (A) the polyimide precursor (polyamic acid ester) in the photosensitive resin composition does not occur. Specifically, when air drying or heat drying is performed, drying can be performed at 20° C. to 140° C. for 1 minute to 1 hour. As described above, a photosensitive resin layer can be formed on the substrate.

(2) Exposure process In this process, the photosensitive resin layer formed above is exposed. As the exposure device, for example, a contact aligner, a mirror projection, a stepper, or the like is used. Exposure can be through a patterned photomask or reticle or directly. The light used for exposure is, for example, an ultraviolet light source.

After exposure, for the purpose of improving photosensitivity, etc., post-exposure baking (PEB) and/or pre-development baking may be performed at any combination of temperature and time, if necessary. The range of baking conditions is preferably a temperature of 40 to 120° C. and a time of 10 seconds to 240 seconds.

(3) Development step In this step, the unexposed portion of the exposed photosensitive resin layer is removed by development. As a developing method for developing the photosensitive resin layer after exposure (irradiation), a conventionally known photoresist developing method can be selected and used. For example, a rotary spray method, a paddle method, an immersion method accompanied by ultrasonic treatment, and the like. For the purpose of adjusting the shape of the relief pattern after development, post-development baking may be performed at any combination of temperature and time, if necessary. The post-development bake temperature can be, for example, 80 to 130° C., and the time can be, for example, 0.5 to 10 minutes.

A developer used for development is preferably a good solvent for the photosensitive resin composition, or a combination of the good solvent and a poor solvent. Good solvents include N-methyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N,N-dimethylacetamide, cyclopentanone, cyclohexanone, γ-butyrolactone, α-acetyl-γ-butyrolactone and the like. Preferred solvents include toluene, xylene, methanol, ethanol, isopropyl alcohol, ethyl lactate, propylene glycol methyl ether acetate and water. When a good solvent and a poor solvent are mixed and used, it is preferable to adjust the ratio of the poor solvent to the good solvent according to the solubility of the polymer in the photosensitive resin composition. Moreover, two or more kinds of each solvent can be used, for example, several kinds can be used in combination.

(4) Heating step In this step, the relief pattern obtained by the above development is heated to dilute the photosensitive component, and (A) the polyimide precursor is imidized to convert it into a cured relief pattern made of polyimide. .
As the heat curing method, various methods such as a method using a hot plate, a method using an oven, and a method using a heating oven capable of setting a temperature program can be selected. Heating can be performed, for example, at 200° C. to 400° C. for 30 minutes to 5 hours. As the atmospheric gas for heat curing, air may be used, or an inert gas such as nitrogen or argon may be used.
A cured relief pattern can be produced in the manner described above. In particular, the cured relief pattern of the present invention improves the adhesion between the Cu layer and the polyimide layer, suppresses the migration of Cu atoms after a high temperature storage test, and suppresses the generation of voids at the interface in contact with the polyimide layer. level can be compatible.

<Semiconductor device>
The present invention also provides a semiconductor device comprising a hardened relief pattern obtained by the above-described method for producing a hardened relief pattern of the present invention.
The above-described semiconductor device can be, for example, a semiconductor device having a base material that is a semiconductor element and a cured relief pattern formed on the base material by the above-described cured relief pattern manufacturing method. That is, the semiconductor device of the present invention has a substrate and a cured relief pattern formed on the substrate.

The semiconductor device can be manufactured, for example, by using a semiconductor element as a base material and including the above-described method for manufacturing a cured relief pattern as part of the process. The semiconductor device of the present invention is a semiconductor having a cured relief pattern formed by the cured relief pattern manufacturing method described above, for example, a surface protective film, an interlayer insulating film, an insulating film for rewiring, a protective film for a flip chip device, or a bump structure. It can be manufactured by forming it as a device protective film or the like and combining it with a known method for manufacturing a semiconductor device.

When the semiconductor device of the present invention is applied to, for example, a metal rewiring layer made of a Cu layer and a relief pattern made of a polyimide resin, the adhesion between the rewiring layer and the polyimide layer is improved and voids are prevented from occurring at the interface. It is possible to achieve both suppression and suppression at a high level, and it has excellent characteristics that short circuit and disconnection are less likely to occur after a high temperature storage test.

The photosensitive resin composition of the present invention is useful not only for application to semiconductor devices as described above, but also for applications such as interlayer insulation of multilayer circuits, cover coats for flexible copper-clad plates, solder resist films, and liquid crystal alignment films. be.

EXAMPLES The present invention will be specifically described below with reference to Examples, but the present invention is not limited to these. The physical properties of the photosensitive resin compositions in Examples, Comparative Examples, and Production Examples were measured and evaluated according to the following methods.

(1) Preparation of cured relief pattern on Cu On a 6-inch silicon wafer (manufactured by Fujimi Denshi Kogyo Co., Ltd., thickness 625 ± 25 μm), a sputtering device (L-440S-FHL type, manufactured by Canon Anelva Co., Ltd.) is used to make a thickness of 200 nm. Thick Ti and 400 nm thick Cu were sputtered in this order. Subsequently, a photosensitive resin composition prepared by the method described below is spin-coated on the wafer using a coater/developer (D-Spin60A type, manufactured by SOKUDO) and dried to form a coating film having a thickness of 10 μm. bottom. Using a mask with a test pattern, this coating film was irradiated with energy of 300 mJ/cm ² by a parallel light mask aligner (PLA-501FA type, manufactured by Canon Inc.). Next, this coating film is spray-developed with a coater developer (D-Spin60A type, manufactured by SOKUDO) using cyclopentanone in the case of a negative type developer, and rinsed with propylene glycol methyl ether acetate to develop Cu A top relief pattern is obtained.

The wafer on which the relief pattern is formed on Cu is heated in a nitrogen atmosphere at 230 ° C. for 2 hours using a temperature-rising programmable curing furnace (VF-2000, manufactured by Koyo Lindbergh Co., Ltd.). A hardened relief pattern consisting of resin about 6-7 μm thick was obtained.

(2) Copper adhesion test The cured relief pattern film prepared in (1) was subjected to the following cross-cut method according to the JIS K 5600-5-6 standard. Evaluated based on criteria.
"◎": The lattice number of the cured resin coating adhered to the substrate is 100
"〇": The lattice number of the cured resin coating adhered to the substrate is 70 to 99
"△": The lattice number of the cured resin coating adhered to the substrate is 40 to 69
"x": the lattice number of the cured resin coating adhered to the substrate is less than 40

(3) High temperature storage test of cured relief pattern on Cu and subsequent void area evaluation (manufactured by Koyo Lindbergh Co., Ltd.), and heated in the air at 150° C. for 168 hours. Subsequently, the entire resin layer on the Cu was removed by plasma etching using a plasma surface treatment apparatus (EXAM type, manufactured by Shinko Seiki Co., Ltd.). The plasma etching conditions are as follows.
Output: 133W
Gas type/flow rate: O ₂ : 40 mL/min + CF ₄ : 1 mL/min Gas pressure: 50 Pa
Mode: hard mode Etching time: 1800 seconds The Cu surface from which the resin layer was completely removed was observed by FE-SEM (S-4800 type, manufactured by Hitachi High-Technologies Corporation), and image analysis software (Azo-kun, manufactured by Asahi Kasei Corporation) was used. was used to calculate the void area occupying the surface of the Cu layer.
When the total area of voids when evaluating the photosensitive resin composition described in Comparative Example 1 is taken as 100%, those with a total area ratio of voids of less than 50% are marked with "A", and 50% or more and less than 75%. Those of 75% or more and less than 100% were judged as "Δ", and those of 100% or more were judged as "x".

<Production Example 1> ((A) Synthesis of polyimide precursor (polymer A-1))
Put 155.1 g of 4,4′-oxydiphthalic dianhydride (ODPA) in a 2-liter separable flask, add 134.0 g of 2-hydroxyethyl methacrylate (HEMA) and 400 ml of γ-butyrolactone, and stir at room temperature. While adding 79.1 g of pyridine, a reaction mixture was obtained. After the end of heat generation due to the reaction, the mixture was allowed to cool to room temperature and allowed to stand still for 16 hours.

Next, under ice-cooling, a solution of 206.3 g of dicyclohexylcarbodiimide (DCC) dissolved in 180 ml of γ-butyrolactone was added to the reaction mixture with stirring over 40 minutes, followed by 4,4′-diaminodiphenyl ether ( A suspension of 93.0 g of DADPE) in 350 ml of γ-butyrolactone was added with stirring over 60 minutes. After further stirring at room temperature for 2 hours, 30 ml of ethyl alcohol was added, and after stirring for 1 hour, 400 ml of γ-butyrolactone was added. A precipitate formed in the reaction mixture was removed by filtration to obtain a reaction liquid.

The resulting reaction solution was added to 3 liters of ethyl alcohol to produce a precipitate consisting of crude polymer. The resulting crude polymer was collected by filtration and dissolved in 1.5 liters of tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was dropped into 28 liters of water to precipitate the polymer, and the obtained precipitate was collected by filtration and dried in a vacuum to obtain a powdery polymer A-1.
When the weight average molecular weight (Mw) of this polymer A-1 was measured, it was 20,000.

<Production Example 2> (Synthesis of polyimide precursor (polymer A-2))
In Production Example 1 above, 147.1 g of 3,3'4,4'-biphenyltetracarboxylic dianhydride (BPDA) was used instead of 155.1 g of 4,4'-oxydiphthalic dianhydride (ODPA). Polymer A-2 was obtained by carrying out the reaction in the same manner as in Production Example 1, except that
When the weight average molecular weight (Mw) of this polymer A-2 was measured, it was 22,000.

<Production Example 3> (Synthesis of polyimide precursor (polymer A-3))
In Production Example 1 above, 2,2-bis[4-(4-aminophenoxy)phenyl]propane (BAPP) (190.7 g) was used in place of 93.0 g of 4,4′-diaminodiphenyl ether (DADPE). Polymer A-3 was obtained by carrying out the reaction in the same manner as in Production Example 1, except that
When the weight average molecular weight (Mw) of this polymer A-3 was measured, it was 21,000.

<Production Example 4> (Synthesis of polyimide precursor (polymer A-4))
In Production Example 1 above, 2,2'-dimethyl-4,4'-diaminobiphenyl (m-TB) (98.6 g) was used in place of 93.0 g of 4,4'-diaminodiphenyl ether (DADPE). Polymer A-4 was obtained by carrying out the reaction in the same manner as in Production Example 1 except for the above.
When the weight average molecular weight (Mw) of this polymer A-4 was measured, it was 21,000.

<Production Example 5> (Synthesis of polyimide precursor (polymer A-5))
The method described in Production Example 1 except that p-phenylenediamine (p-PD) (50.2 g) was used in place of 93.0 g of 4,4′-diaminodiphenyl ether (DADPE) in Production Example 1 above. Polymer A-5) was obtained by performing the reaction in the same manner.
When the weight average molecular weight (Mw) of this polymer A-5 was measured, it was 21,000.

<Production Example 6> (Synthesis of polyimide precursor (polymer A-6))
In Production Example 1 above, instead of 155.1 g of 4,4'-oxydiphthalic dianhydride (ODPA), pyromellitic anhydride (PMDA) (54.5 g) and 4,4'-oxydiphthalic dianhydride (ODPA) (77.6 g) and 2,2′-dimethyl-4,4′-diaminobiphenyl (m-TB) (m-TB) instead of 93.0 g of 4,4′-diaminodiphenyl ether (DADPE). 98.6 g) was used, the reaction was carried out in the same manner as in Production Example 1 to obtain polymer A-6.
When the weight average molecular weight (Mw) of this polymer A-6 was measured, it was 21,000.

<Production Example 7> (Synthesis of polyimide precursor (polymer A-7))
In Production Example 1 above, instead of 155.1 g of 4,4'-oxydiphthalic dianhydride (ODPA), 4,4'-oxydiphthalic dianhydride (ODPA) (77.6 g) and 3,3' Polymer A-7 was obtained by carrying out the reaction in the same manner as in Production Example 1 except that 4,4'-biphenyltetracarboxylic dianhydride (BPDA) (73.6 g) was used. .
When the weight average molecular weight (Mw) of this polymer A-7 was measured, it was 20,000.

<Production Example 8> (Synthesis of polyimide precursor (polymer A-8))
Production example except that 2,2'-bis(trifluoromethyl)benzidine (TFMB) (160.1 g) was used in place of 93.0 g of 4,4'-diaminodiphenyl ether (DADPE) in Production Example 1 above. Polymer A-8 was obtained by carrying out the reaction in the same manner as described in 1.
The weight average molecular weight (Mw) of this polymer A-8 was measured and found to be 21,000.

<Production Example 9> (Synthesis of polyimide precursor (polymer A-9))
In Production Example 1 above, instead of 155.1 g of 4,4'-oxydiphthalic dianhydride (ODPA), pyromellitic anhydride (PMDA) (109.1 g) was used, and 4,4'-diaminodiphenyl ether ( DADPE) Instead of 93.0 g, p-phenylenediamine (p-PD) (50.2 g) was used in the same manner as in Production Example 1 to give polymer A-9. Obtained.
When the weight average molecular weight (Mw) of this polymer A-9 was measured, it was 20,000.

<Example 1>
(A) Polymer A-1 (100 g) as a polyimide precursor, (B) B-1 (0.5 g) as a disulfide azole silane compound, (C) O-benzoyl-N- as a photopolymerization initiator C-1 (1-Methyl-2-oxo-2-phenylethylidene) hydroxylamine (4 g) and other components such as tetraethylene glycol dimethacrylate (abbreviated as M4G, 8 g), N-phenyldiethanolamine (abbreviated as DEA, 4 g), gamma-butyrolactone and A photosensitive resin composition solution was prepared by dissolving in a mixed solvent of DMSO (weight ratio 75:25) and adjusting the amount of the solvent so that the viscosity was about 35 poise.
This composition was evaluated by the method described above. The evaluation results are shown in Table 1.

<Examples 2 to 23, Comparative Examples 1 to 6>
Evaluation was performed in the same manner as in Example 1, except that the resin composition solutions were used at the ratios shown in Tables 1 to 3. Evaluation results are shown in Tables 1 to 3. Compounds represented by abbreviations in the table are as shown below.

(Disulfide azole silane compound B-1)
2,2′-dithiobis{1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-imidazole}:

(Disulfide azole silane compound B-2)
2,2′-dithiobis{1-[3-(triethoxysilyl)propylcarbamoyl]-1H-imidazole}:

(Disulfide azole silane compound B-3)
2,2′-dithiobis{1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-benzimidazole}:

(Disulfide azole silane compound B-4)
2,2′-dithiobis{1-[3-(triethoxysilyl)propylcarbamoyl]-1H-benzimidazole}:

(Disulfide azole silane compound B-5)
3,3′-dithiobis{1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole}:

(Disulfide azole silane compound B-6)
3,3′-dithiobis{1-[3-(triethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole}:

(Disulfide azole silane compound B-7)
3,3′-dithiobis{5-amino-1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole}:

(Disulfide azole silane compound B-8)
3,3′-dithiobis{5-amino-1-[3-(triethoxysilyl)propylcarbamoyl]-1H-1,2,4-triazole}:

(Disulfide azole silane compound B-9)
4,4′-dithiobis{1-[3-(trimethoxysilyl)propylcarbamoyl]-1H-1,2,3-triazole}:

(Disulfide azole silane compound B-10)
4,4′-dithiobis{1-[3-(triethoxysilyl)propylcarbamoyl]-1H-1,2,3-triazole}:

Nitrogen-containing compound a: 1H-1,2,3-triazole

Nitrogen-containing compound b: 4,4'-di(1,2,3-triazolyl) disulfide

Nitrogen-containing compound c: 3-aminopropyltriethoxysilane

<Comparative Example 7>
Evaluation was performed in the same manner as in Example 1, except that the disulfide azole silane compound B-1 was directly applied to the surface of the copper substrate. Disulfide azole silane compound B-1 (0.5 g) was dissolved in gamma-butyrolactone (10 g), a Cu wafer was immersed in the solution for 10 minutes, and B-1 was applied to the substrate. The evaluation results are shown in Table 2.

As is clear from Tables 1 to 3, in the examples containing the disulfide azole silane compound, the adhesion between copper and polyimide is superior to the comparative example not containing the disulfide azole silane compound, and the adhesion is excellent in a high-temperature environment. The occurrence of copper voids in was suitably suppressed.

Although the embodiment of the present invention has been described above, the present invention is not limited to this, and can be modified as appropriate without departing from the gist of the invention.

By using the photosensitive resin composition of the present invention, voids do not occur at the interface of the Cu layer in contact with the polyimide layer even after a high temperature storage test, resulting in high adhesion, such as semiconductor devices, multilayer wiring boards, etc. It can be suitably used in the field of photosensitive materials useful for the production of electrical and electronic materials.

Claims (8)

Ingredients for:
(A) a polyimide precursor represented by the following general formula (A1);
(B) a disulfide azole silane compound; and (C) a photoinitiator;
including
The disulfide azole silane compound (B) contains at least one selected from the group consisting of an alkoxysilyl group, an alkoxysilylalkyl group, an alkoxysilylalkylcarbamoyl group, an amide group, and an amino group. A photosensitive resin composition:

{wherein X is a tetravalent organic group, Y is a divalent organic group, R ₁ and R ₂ are each independently a hydrogen atom, and the following general formula (R1):

(In general formula (R1), R ₃ , R ₄ and R ₅ are each independently a hydrogen atom or an organic group having 1 to 3 carbon atoms, and p is an integer selected from 2 to 10.) or a saturated aliphatic group having 1 to 4 carbon atoms. However, both R ₁ and R ₂ are not hydrogen atoms at the same time. }. The photosensitive resin composition according to claim 1, wherein in the general formula (A1), the X includes a structure represented by the following formula (2).

The photosensitive resin composition according to claim 1 or 2, wherein in the general formula (A1), the Y includes a structure represented by the following formula (8).

The photosensitive resin composition according to claim 1 or 2, wherein in the general formula (A1), the Y includes a structure represented by the following formula (9).

The photosensitive resin composition according to any one of claims 1 to 4, wherein the content of component (B) is 0.05 to 5.0 parts by mass with respect to 100 parts by mass of component (A). A method for producing polyimide by curing the photosensitive resin composition according to any one of claims 1 to 5. (1) a step of applying the photosensitive resin composition according to any one of claims 1 to 5 onto a substrate to form a photosensitive resin layer on the substrate;
(2) exposing the photosensitive resin layer;
(3) developing the photosensitive resin layer after exposure to form a relief pattern;
(4) heat-treating the relief pattern to form a cured relief pattern;
A method of manufacturing a cured relief pattern, comprising: A semiconductor device comprising a cured relief pattern obtained by the method of manufacturing a cured relief pattern according to claim 7.