JP2023004296A - Film removal device - Google Patents

Abstract

To realize a film removal device with high processing efficiency while suppressing equipment costs while preventing an object to be processed from becoming hot.SOLUTION: A film removal device (100) includes a vacuum vessel (10), an antenna (4) provided outside the vacuum vessel (10), a magnetic field introduction window (WR), a first disc (20) within the vacuum vessel (10), a second disc (30) provided on the first disc (20), and a holding member (40) holding a workpiece (W) provided on the second disk (30), and in a plan view, a perpendicular line (VH) is located perpendicular to a magnetic field introduction window (WR) through the third center point (P3) of the magnetic field introduction window (WR) in a vertical line placement area (VR) from the first tangent (H1) of the first disc (20) to the second tangent (H2) of the orbital circle (32) of the second center point (P2) of the second disc (30) parallel to the first tangent (H1).SELECTED DRAWING: Figure 1

Description

TECHNICAL FIELD The present invention relates to a film removing apparatus for removing a film from an object on which a film is formed using plasma.

2. Description of the Related Art Conventionally, a technique for removing a film from a work (object to be processed) on which a film is formed is known. For example, Patent Literature 1 discloses a film removing device that removes the film from the coating material by irradiating the coating material with the film with an ion flow. The film removal apparatus described in Patent Document 1 removes the film from the coating material by placing the coated coating material in an ion flow concentrated portion where two or more ion streams overlap, and irradiating the coating material with the ion stream. conduct.

WO2016/163278

However, the above-described conventional technique has a problem that the temperature of the covering material becomes high because the treatment is performed by installing the covering material in the ion flow concentrated portion. In addition, since the coating material is continuously irradiated with the ion stream, the temperature of the coating material rises significantly. Furthermore, in order to increase the processing amount of the coating material to be removed, it is necessary to widen the area of the ion flow concentrated portion. In order to increase the area of the ion current concentration, the ion source must be enlarged. Since the film removal apparatus described in Patent Document 1 requires a plurality of ion sources, the plurality of ion sources must be increased in size in order to increase the processing amount of the coating material to be removed, which increases the apparatus cost. The problem is that it increases significantly.

One aspect of the present invention has been devised in view of the conventional problems described above, and aims to realize a film removal apparatus that prevents an object to be treated from becoming hot, suppresses the apparatus cost, and has high treatment efficiency. aim.

In order to solve the above-described problems, a film removing apparatus according to an aspect of the present invention includes a vacuum vessel that accommodates an object to be processed inside; an antenna that is provided outside the vacuum vessel and generates a high-frequency magnetic field; a magnetic field introduction window provided on a wall surface of the vacuum vessel for introducing the high-frequency magnetic field into the interior of the vacuum vessel in order to generate plasma inside the vacuum vessel; and a stage on which the object to be processed is placed, wherein the stage comprises a first disc that rotates around a first center point that is the center; a plurality of second discs provided along the outer periphery and rotating around a second center point that is the center of each; a plurality of holding members provided on the second discs for respectively holding the objects to be processed; , in plan view, from the first tangent line in contact with the outer circumference of the first disc to the tangent line of the orbital circle of the second center point parallel to the first tangent line, the tangent line being more than the first center point A perpendicular line passing through the center of the magnetic field introduction window and perpendicular to the magnetic field introduction window is positioned in the perpendicular arrangement region up to the second tangent line located on the first tangent line side.

According to one aspect of the present invention, which has been devised in view of the conventional problems described above, it is possible to realize a film removal apparatus that prevents the object to be treated from becoming hot, suppresses the apparatus cost, and has high treatment efficiency. be able to.

1 is a plan view of a film removing device according to Embodiment 1 of the present invention; FIG. FIG. 2 is a cross-sectional view of the film removing device showing a combination of the AA cross section and the BB cross section of FIG. 1; 4 is a plan view of a magnetic field introduction window of the film removing device; FIG. FIG. 4 is a CC cross-sectional view of the magnetic field introducing window of FIG. 3; FIG. 5 is a plan view showing a modification of the magnetic field introducing window of the film removing device; 4 is a graph showing the relationship between the distance from the antenna and the plasma density; FIG. 4 is a plan view showing a plasma region of the film removal device; FIG. 3 is a plan view of a film removing device according to Embodiment 2 of the present invention;

[Embodiment 1]
FIG. 1 is a plan view of a film removing device 100 according to Embodiment 1 of the present invention. FIG. 2 is a cross-sectional view of the film removing apparatus 100 showing a combination of the AA cross section and the BB cross section of FIG. 1, the range M in FIG. is the BB cross-sectional view of FIG. The film-removing device 100 is a film-removing device that uses plasma to remove a film from an object to be processed (workpiece W) on which a film has been formed. The workpiece W is made of, for example, a metal part as a base material, and a coating made of an inorganic material is formed on the surface thereof. An embodiment of the present invention will be described in detail below.

[Structure of film removal device]
A schematic configuration of the film removal apparatus 100 will be described with reference to FIGS. 1 and 2. FIG. In FIG. 1, the direction from the plasma source 1 to the vacuum vessel 10 is the x-axis direction, the extending direction of the antenna 4 is the z-axis direction, and the direction perpendicular to the x-axis direction and the z-axis direction is the y-axis direction. In addition, in FIG. 1, the holding member 40 is illustrated only on one second disc 30, and the illustration of the holding members 40 provided on the other second discs 30 is omitted. In addition, in FIG. 1, only one holding member 40 shows the work W, and illustration of the works W held by the other holding members 40 is omitted. The same applies to FIGS. 7 and 8 as well.

As shown in FIGS. 1 and 2, the film removal apparatus 100 includes a plasma source 1 and a vacuum chamber 10. As shown in FIG.

(plasma source)
A plasma source 1 is an ICP (inductively coupled plasma device) that generates high-density plasma in a vacuum vessel 10 by inductive coupling. The plasma source 1 can generate a high density plasma of 1e11 to 1e12/cm ³ , for example.

A plasma source 1 is provided outside the vacuum vessel 10 . A plasma source 1 includes a matching box 2, a shield box 3, an antenna 4, and a magnetic field introduction window WR. The matching box 2 is an electric circuit that matches the power from the power supply D1 according to the load. Power is efficiently sent from the power source D1 to the antenna 4 by the matching box 2 . The shield box 3 accommodates the antenna 4 and the magnetic field introduction window WR inside and prevents the high frequency magnetic field generated from the antenna 4 from leaking to the outside. A shield box 3 is provided between the matching device 2 and the vacuum vessel 10 . A wall surface 3a of the shield box 3 is formed with an opening 3b. The opening 3b is formed at a position corresponding to the opening 10b formed in the wall surface 10a of the vacuum container 10 so as to open larger than the opening 10b.

In addition, in Embodiment 1, the film removal apparatus 100 includes two plasma sources 1 in the x-axis direction with the vacuum vessel 10 interposed therebetween, but the present invention is not limited to the above. Since even one plasma source 1 can perform the film removal process, the film removal apparatus 100 may be provided with at least one plasma source 1 .

(antenna)
Antenna 4 generates a high frequency magnetic field. The antenna 4 is a metal pipe antenna extending in the Z direction, and is arranged inside the shield box 3 along the magnetic field introducing window WR. As shown in FIG. 2, the length L1 of the antenna 4 in the height direction (Z direction) of the work W is longer than the height L2 of the work W. As shown in FIG. As a result, even in the height direction of the work W, the work W can be positioned within the region where the plasma is generated, so that the entire work W can be subjected to film removal treatment. By changing the length of the antenna 4, the film removal processing area can be increased, and plasma suitable for the size of the workpiece W can be generated.

The antenna 4 can be curved as required. Thereby, the distance from each point of the antenna 4 to the magnetic field introduction window WR can be changed, and the plasma density in the z-axis direction generated inside the vacuum vessel 10 can be adjusted.

(Magnetic field introduction window)
The magnetic field introduction window WR introduces the high-frequency magnetic field generated by the antenna 4 into the interior 11 of the vacuum vessel 10 in order to generate plasma in the interior 11 of the vacuum vessel 10 . The magnetic field introduction window WR is configured by the magnetic field introduction window forming portion 5 and is a part of the magnetic field introduction window forming portion 5 . The magnetic field introduction window WR is arranged substantially parallel to the antenna 4 . A magnetic field introduction window forming part 5 is arranged in an opening 3b formed in a wall surface 3a of the shield box 3. The magnetic field introduction window forming part 5 is arranged on the wall surface of the vacuum vessel 10 so as to cover the opening 10b of the vacuum vessel 10. 10a.

FIG. 3 is a plan view of the magnetic field introduction window WR of the film removal apparatus 100 when the plasma source 1 is viewed from the vacuum vessel 10 side. 4 is a cross-sectional view taken along line CC of FIG. 3. FIG. More specifically, a sectional view 1001 in FIG. 4 shows a CC sectional view of the film removing apparatus 100, a modified sectional view 1002 shows a modified example of the sectional view 1001, and a modified sectional view 1003 shows a cross section. Fig. 1001 shows another modification of Fig. 1001; Note that FIG. 3 shows the antenna 4 so that the positional relationship between the magnetic field introduction window WR and the antenna 4 can be understood. 4 shows the positional relationship between the magnetic field introduction window WR, the antenna 4, the shield box 3, and the vacuum vessel 10, so that the antenna 4, part of the shield box 3, and the vacuum vessel 10 part of the figure.

As shown in cross-sectional views 1001 of FIGS. 3 and 4, the magnetic field introducing window-forming portion 5 includes a metal plate 6 and a dielectric plate 7 . A metal plate 6 and a dielectric plate 7 serving as a magnetic field introduction window component 5 are provided in this order on the wall surface 3a of the shield box 3 from the vacuum container 10 side toward the antenna 4 side.

The metal plate 6 is provided on the wall surface 10a of the vacuum vessel 10 so as to cover the opening 10b of the vacuum vessel 10, as shown in a cross-sectional view 1001 of FIG. The metal plate 6 is provided on the wall surface 10a of the vacuum container 10 by being arranged in the opening 3b formed in the wall surface 3a of the shield box 3. As shown in FIG.

The metal plate 6 has a plurality of slits 61 passing through the metal plate 6 in the x-axis direction, as shown in cross-sectional views 1001 of FIGS. The plurality of slits 61 are elongated rectangular openings each extending in the y-axis direction. Also, the plurality of slits 61 are arranged in a row in the z-axis direction. A slit 61 is formed in the metal plate 6 so that the longitudinal direction of the antenna 4 and the longitudinal direction of the slit 61 are perpendicular to each other.

The dielectric plate 7 is installed in contact with the metal plate 6 from the atmosphere side (antenna 4 side) of the metal plate 6 so as to cover the plurality of slits 61 . The dielectric plate 7 is made of dielectric material. Ceramics or glass, for example, can be used as the material forming the dielectric plate 7 . As shown in FIGS. 3 and 4, in the magnetic field introduction window forming portion 5, the metal plate 6 and the dielectric plate 7 in the region where the slit 61 is formed serve as the magnetic field introduction window WR. In other words, the magnetic field introducing window WR is composed of the metal plate 6 having a plurality of slits 61 and the dielectric plate 7 provided on the atmosphere side of the metal plate 6 and covering the slits 61 .

A high-frequency magnetic field generated by the antenna 4 is supplied to the interior 11 of the vacuum vessel 10 through a plurality of slits 61 in the dielectric plate 7 and the metal plate 6 in the magnetic field introducing window WR. Since the plurality of slits 61 are closed by the dielectric plate 7, the vacuum inside 11 of the vacuum container 10 is maintained.

By forming the magnetic field introduction window WR not only with the dielectric plate 7 but also with the metal plate 6 in which the slit 61 is formed, the function of introducing the high frequency magnetic field into the vacuum vessel 10 is ensured, and the mechanical properties of the magnetic field introduction window WR are improved. strength can be increased. Thereby, the risk of dielectric plate 7 being damaged can be reduced.

A high-frequency magnetic field generated from an antenna 4 arranged outside the vacuum vessel 10 is introduced into the interior 11 of the vacuum vessel 10 through the magnetic field introduction window WR, thereby generating plasma in the interior 11 of the vacuum vessel 10. be able to. The plasma has a density distribution corresponding to the magnetic field distribution that is inversely proportional to the distance in the x-axis direction from the antenna 4, and has a highly directional distribution that spreads in the y-axis direction. Thereby, high-density plasma can be widely generated in the interior 11 of the vacuum vessel 10, and the workpiece W can be efficiently processed.

(Modified example of the positional relationship between the magnetic field introduction window, the shield box, and the vacuum vessel)
Modified examples of the positional relationship between the magnetic field introduction window WR, the shield box 3 and the vacuum vessel 10 will be described based on modified cross-sectional views 1002 and 1003 of FIG.

As shown in a modified cross-sectional view 1002 of FIG. It may be formed to have a size substantially matching that of the opening 10b. In this case, the magnetic field introduction window forming part 5 is provided on the wall surface 3 a of the shield box 3 so as to cover the opening 3 b formed in the wall surface 3 a of the shield box 3 . More specifically, the metal plate 6 of the magnetic field introduction window forming portion 5 forming the magnetic field introduction window WR is provided on the wall surface 3a of the shield box 3 so as to close the opening 3b. As described above, since the opening 3b is formed in the wall surface 3a of the shield box 3 at a position corresponding to the opening 10b of the wall surface 10a of the vacuum vessel 10, the magnetic field which is a part of the magnetic field introduction window forming portion 5 The introduction window WR can be regarded as being provided on the wall surface 10 a of the vacuum vessel 10 .

Further, in the film removing apparatus 100, as shown in a modified cross-sectional view 1003 of FIG. In that case, the metal plate 6 of the magnetic field introduction window forming part 5 is installed on the wall surface 10a of the vacuum container 10 so as to cover the opening 10b formed in the wall surface 10a of the vacuum container 10 . Furthermore, on the surface of the metal plate 6 opposite to the vacuum vessel 10 , the wall surface 3 a is installed at a location other than the magnetic field introduction window WR, so that the shield box 3 is placed on the wall surface 3 a of the vacuum vessel 10 via the metal plate 6 . to be installed.

Even if the CC cross-sectional view of the film removing apparatus 100 is changed to the configuration shown in the modified cross-sectional view 1002 and the modified cross-sectional view 1003 of FIG. It can be effective.

(Modified example of magnetic field introducing window)
A modified example of the magnetic field introduction window WR will be described based on FIG. FIG. 5 is a plan view showing a magnetic field introduction window WRA, which is a modified example of the magnetic field introduction window WR of the film removal apparatus 100. FIG. FIG. 5 shows the antenna 4 so that the positional relationship between the magnetic field introduction window WRA and the antenna 4 can be understood. As shown in FIG. 5, the magnetic field introduction window WRA differs from the magnetic field introduction window WR in that it includes an opening 63 instead of the slit 61, and the other points are the same as the magnetic field introduction window WR.

As shown in FIG. 5, the magnetic field introducing window forming portion 5A includes a metal plate 6A and a dielectric plate 7. As shown in FIG. One opening 63 corresponding to the opening 10b of the vacuum vessel 10 is formed in the metal plate 6A. In the magnetic field introduction window forming portion 5A, the metal plate 6A and the dielectric plate 7 in the region where the opening 63 is formed serve as the magnetic field introduction window WRA. At this time, the magnetic field introducing window WRA is substantially formed only by the dielectric plate 7 . That is, the magnetic field introduction window WRA for introducing a high frequency magnetic field into the vacuum vessel 10 is composed of at least the dielectric plate 7 . Plasma can be generated in the interior 11 of the vacuum vessel 10 by the plasma source 1 even if the slit 61 is not formed in the metal plate 6 like the magnetic field introducing window WRA. Thus, by providing the magnetic field introduction window WRA with the opening 63 having a size corresponding to the opening 10 b of the vacuum vessel 10 , a large amount of high-frequency magnetic field can be introduced into the vacuum vessel 10 .

(Vacuum container)
As shown in FIGS. 1 and 2, the vacuum vessel 10 accommodates a workpiece W inside 11 . The interior 11 of the vacuum vessel 10 is evacuated by the vacuum pump 8 and gas is introduced. The gas introduced into the interior 11 of the vacuum chamber 10 is not particularly specified, and any gas capable of generating plasma capable of removing the film from the workpiece W may be used. The vacuum container 10 is, for example, a box-shaped container made of metal. As described above, the wall surface 10a of the vacuum vessel 10 is formed with the opening 10b penetrating in the thickness direction. The vacuum vessel 10 is electrically grounded. A stage S is provided in the vacuum vessel 10 .

(stage)
A plurality of works W are placed on the stage S. The stage S has a first disc 20 and a second disc 30 . The first disc 20 rotates around a first center point P1. The first disk 20 rotates about the first center point P1 in, for example, the direction indicated by the arrow Q1.

A plurality of second discs 30 are provided on the first disc 20 along the outer circumference of the first disc 20 . The second discs 30 rotate around a second center point P2, which is the center of each. The second disk 30 rotates about the second center point P2, for example, in the direction indicated by the arrow Q2. The rotation of the first disc 20 about the first center point P1 causes the second center point P2 to move on the orbital circle 32 .

A plurality of holding members 40 are provided on the second disc 30 along the outer circumference of the second disc 30 . A plurality of holding members 40 hold workpieces W, respectively. Furthermore, the holding member 40 rotates. The holding member 40 rotates, for example, in the direction indicated by arrow Q3.

As shown in FIG. 2, the work W is connected to a pulse power source D2 via the first disc 20, the second disc 30, and the holding member 40, and a bias voltage can be applied to the work W. be. By controlling the energy when ions in the plasma in the vacuum chamber 10 impinge on the work W, for example, the bias voltage can control the film removal of the work W. FIG.

The diameter of the second disc 30 is smaller than the radius of the first disc 20 . Thereby, more works W can be processed. In addition, although the second disc 30 is inscribed in the first disc 20 in FIG. 1, it is not limited to the above. For example, the second disc 30 may be positioned on the first disc 20 such that the second disc 30 is contained within the first disc 20, and the second disc 30 may be located on the first disc 20. The second center point P2 of 30 may be located, and a part of the outer circumference of the second disc 30 may be positioned outside the outer circumference of the first disc 20 .

[Positional relationship between the magnetic field introduction window and the stage]
In a plan view in the z-axis direction (the height direction of the workpiece W), the magnetic field introduction window WR and the stage S are such that a perpendicular line VH passing through the third center point P3 of the magnetic field introduction window WR and perpendicular to the magnetic field introduction window WR is the point of contact. It is arranged so as to be in contact with the outer circumference of the first disc 20 at T1. In other words, the perpendicular line VH coincides with the first tangent line H1 that contacts the first disk 20 at the contact point T1. A third center point P3 of the magnetic field introduction window WR approximately coincides with the center point of the antenna 4 .

By arranging the magnetic field introduction window WR and the stage S in this manner, many workpieces W can be included in the plasma region PR1, which will be described later. As a result, even with one plasma source 1, many workpieces W can be plasma-processed.

(plasma region)
The plasma region PR1 will be described with reference to FIGS. 6 and 7. FIG. A plasma region PR1 indicates a region where plasma is generated. FIG. 6 is a graph showing the relationship between the distance from the antenna 4 and the plasma density. The horizontal axis indicates the distance from the antenna 4, and the vertical axis indicates the plasma density. FIG. 7 is a plan view showing the plasma region PR1 of the film removal apparatus 100. FIG.

The plasma region PR1 expands as the distance from the antenna 4 increases. However, as shown in FIG. 6, the plasma density decreases as the distance from the antenna 4 increases. If the plasma density becomes too small, the processing efficiency will decrease. Therefore, the film removal apparatus 100 uses a plasma density with a relative value of about 0.1 to 0.5. As a result, the film removal process can be performed in a wide plasma region PR1 with a high plasma density.

In addition, as shown in FIG. 6, the plasma density used in the film removal apparatus 100 is stable with a small gradient of plasma density with respect to changes in the distance from the antenna 4, so uniform film removal processing can be performed. can be done. Furthermore, since plasma with a relatively low plasma density is used, the film removal process can be performed in the vacuum vessel 10 without the plasma density significantly changing between the plasma region PR1 and the plasma non-generating region PR2, which will be described later.

The plasma region PR1 and the non-plasma generation region PR2, which is a region other than the plasma region PR1 in the vacuum vessel 10, have a distribution as shown in FIG. 7, for example. As shown in FIG. 7, when the magnetic field introduction window WR and the stage S are arranged so that the contact T1 is located at a position where the width L3 of the plasma region PR1 is about twice the width L4 of the slit 61, stable A plasma region PR1 having a plasma density can be formed.

〔motion〕
First, the workpiece W is held by each holding member 40 on the second disc 30 . Next, plasma is generated in the vacuum vessel 10 by the plasma source 1, the first disc 20 is rotated about the first center point P1, and the second disc 30 is rotated about the second center point P2. , the holding member 40 is rotated.

By rotating the first disc 20 about the first center point P1, the workpiece W is alternately positioned in the plasma region PR1 and the non-plasma generation region PR2, as shown in FIG. Therefore, the workpiece W is not continuously exposed to the plasma in the interior 11 of the vacuum vessel 10 but intermittently. As a result, the film removal process proceeds in the plasma region PR1, and the temperature rise of the workpiece W can be suppressed at the timing when the work W is located in the plasma non-generating region PR2 and away from the plasma region PR1. As described above, in the film removing apparatus 100, the workpiece W can be separated from the plasma region PR1 at a certain timing, so that the temperature of the workpiece W is less likely to rise.

In addition, the second disk 30 rotates about the second center point P2, and the holding member 40 rotates, so that the workpiece W is alternately exposed to a high plasma density region and a low plasma density region while rotating. It is film-removed. This enables uniform film removal.

The rotational speeds of the first disk 20 and the second disk 30 are determined according to the temperature of the workpiece W. As shown in FIG. Specifically, for example, an upper limit temperature of the work W is set, and the rotation speed is set in consideration of the temperature rise value of the work W so that the temperature of the work W does not reach the upper limit temperature.

(effect)
Since the film removal apparatus 100 employs ICP, it is possible to generate high-density plasma, and the film removal process can be performed with one plasma source 1, so that the cost of the apparatus can be reduced.

In the film removing apparatus 100, the magnetic field introduction window WR and the stage S are arranged so that the perpendicular line VH substantially coincides with the first tangent line H1 of the first disc 20. , plasma can be generated such that the plasma region PR1 having a high plasma density spreads. As a result, the processing range with one plasma source 1 is widened, and many workpieces W can be processed. In addition, since the workpiece W can be positioned in the plasma region PR1 for a long time, the time required for the film removal process can be shortened, and the efficiency of the film removal process can be improved.

In the film removing device 100 , a plurality of second discs 30 are provided along the outer circumference of the first disc 20 , and a plurality of holding members 40 are provided along the outer circumference of each second disc 30 . As a result, the number of workpieces W loaded in the vacuum vessel 10 can be increased, and the number of workpieces W that can be processed at one time can be increased.

In the film removal apparatus 100, the work W is alternately positioned between the plasma region PR1 and the non-plasma generation region PR2 by rotating the first disc 20 in the vacuum chamber 10. FIG. As a result, the work W is intermittently exposed to the plasma, so that the work W can be prevented from becoming hot.

Moreover, when the distance between the plasma source 1 and the workpiece W is short, the temperature of the workpiece W tends to be high. On the other hand, in the film removing apparatus 100, the magnetic field introduction window WR and the stage S are arranged so that the vertical line VH substantially coincides with the tangent line of the first disk 20. FIG. As a result, the distance between the plasma source 1 and the workpiece W is increased compared to the case where the magnetic field introduction window WR and the stage S are arranged so that the perpendicular line VH passes through the first center point P1 of the first disk 20. Therefore, the film removal process can be performed without causing the temperature of the work W to fluctuate extremely.

As described above, according to the film removal apparatus 100, film removal can be efficiently performed with a small number of plasma generation sources while preventing the work W from becoming hot.

[Embodiment 2]
Another embodiment of the invention will be described below with reference to FIG. FIG. 8 is a plan view of a film removing device 100A according to Embodiment 2 of the present invention. For convenience of description, members having the same functions as those of the members described in the above embodiments are denoted by the same reference numerals, and description thereof will not be repeated. As shown in FIG. 8, the film removal apparatus 100A differs from the film removal apparatus 100 in the relative positional relationship between the magnetic field introduction window WR and the stage S, and the other configurations are the same.

In the film removing apparatus 100A, the magnetic field introduction window is arranged such that the perpendicular line VH passing through the third center point P3 of the magnetic field introduction window WR and perpendicular to the magnetic field introduction window WR is positioned in the perpendicular arrangement region VR in plan view in the z-axis direction. A WR and a stage S are arranged. Here, the perpendicular arrangement region VR is a tangent line of the orbital circle 32 from the first tangent line H1 to the second center point P2 parallel to the first tangent line H1 and on the first tangent line H1 side of the first center point P1. It is the area up to the second tangent line H2 located. As a result, the film removal device 100A has the same effect as the film removal device 100 does.

〔summary〕
A film removing apparatus (100/100A) according to aspect 1 of the present invention comprises a vacuum container (10) containing an object to be processed (work W) inside (11), and a vacuum container (10) provided outside the vacuum container. and a magnetic field introduction window provided on the wall surface (10a) of the vacuum vessel for introducing the high-frequency magnetic field into the interior of the vacuum vessel in order to generate plasma inside the vacuum vessel. (WR), and a stage (S) installed in the vacuum vessel on which the plurality of objects to be processed are placed, the stage rotating around a first center point (P1) that is the center a first disc (20) that rotates around a second center point (P2) that is the center of each of the first discs (20) provided on the first disc along the outer periphery of the first disc; It has a disk (30) and a plurality of holding members (40) provided on the second disk and each holding the object to be processed, and is in contact with the outer circumference of the first disk in plan view. A second tangent line from the first tangent line (H1) to the orbital circle (32) of the second center point parallel to the first tangent line and located on the first tangent side of the first center point A vertical line (VH) passing through the center (third center point P3) of the magnetic field introducing window (WR) and perpendicular to the magnetic field introducing window (WR) is positioned in the vertical line arrangement region (VR) up to (H2).

According to the above configuration, since a high-frequency magnetic field is introduced into the vacuum vessel through the magnetic field introduction window, plasma can be generated in the vacuum vessel. Further, in a plan view, a perpendicular line that passes through the center of the magnetic field introduction window and is perpendicular to the magnetic field introduction window is located in the perpendicular arrangement area, so that many objects to be processed can be included in the plasma area. Thus, even with one antenna, many objects to be processed can be plasma-processed. Further, by rotating the first disk, it is possible to set the timing at which the object to be processed is positioned in a region not exposed to the plasma, thereby preventing the object to be continuously exposed to the plasma. temperature rise can be suppressed. Furthermore, the rotation of the second disk equalizes the plasma density to which each workpiece is exposed. As a result, it is possible to realize a film-removing apparatus with reduced apparatus cost and high treatment efficiency while preventing the object to be treated from becoming hot.

In the film removing apparatus (100/100A) according to aspect 2 of the present invention, in aspect 1, the magnetic field introduction window (WR) includes a metal plate (6) having a plurality of slits (61), and and a dielectric plate (7) covering the slit provided on the atmosphere side.

According to the above configuration, since the magnetic field introduction window is composed of the metal plate and the dielectric plate, plasma can be generated in the vacuum vessel by the high-frequency magnetic field generated from the antenna. Moreover, since the strength of the magnetic field introduction window can be increased by the slits in the metal plate, damage to the dielectric plate can be prevented.

In the film removing apparatus (100/100A) according to mode 3 of the present invention, in mode 2, the magnetic field introduction window (WR) is arranged substantially parallel to the antenna (4), The slit may be formed in the metal plate (6) so that the longitudinal direction and the longitudinal direction of the slit (61) are perpendicular.

According to the above configuration, since the longitudinal direction of the slit is perpendicular to the longitudinal direction of the antenna, it is possible to generate a plasma region with a high plasma density even in a direction perpendicular to the longitudinal direction of the antenna in the vacuum vessel. .

A film removing apparatus (100/100A) according to aspect 4 of the present invention is the film removing apparatus (100/100A) according to any one of aspects 1 to 3, wherein the rotational speeds of the first disc (20) and the second disc (30) are It may be determined according to the temperature of the object to be processed (workpiece W). According to the above configuration, it is possible to remove the film from the object to be processed in an appropriate temperature range.

In the film removing device (100/100A) according to aspect 5 of the present invention, in any one of aspects 1 to 4, the holding member (40) may rotate. According to the above configuration, a more uniform film removal process is possible.

The film removing apparatus (100/100A) according to aspect 6 of the present invention is the film removing apparatus (100/100A) according to any one of aspects 1 to 5, wherein the length (L1 ) may be longer than the height (L2) of the object to be processed. According to the above configuration, since the object to be processed can be covered with plasma even in the height direction of the object to be processed, the entire object to be processed can be subjected to film removal treatment.

The present invention is not limited to the above-described embodiments, but can be modified in various ways within the scope of the claims, and can be obtained by appropriately combining technical means disclosed in different embodiments. is also included in the technical scope of the present invention.

4 Antenna 5 Magnetic field introduction window constituent parts 6, 6A Metal plate 7 Dielectric plate 10 Vacuum container 20 First disc 30 Second disc 32 Orbital circle 40 Holding member 61 Slits 100, 100A Film removing device H1 First tangent line H2 Two tangent lines VR Perpendicular arrangement area P1 First center point P2 Second center point P3 Third center point (center)
L1 Length of the antenna in the height direction of the work (processed object) L2 Height of the work (processed object) WR Magnetic field introduction window

Claims (6)

a vacuum vessel containing an object to be processed;
An antenna that is provided outside the vacuum vessel and that generates a high-frequency magnetic field;
a magnetic field introduction window provided on a wall surface of the vacuum vessel for introducing the high-frequency magnetic field into the vacuum vessel in order to generate plasma inside the vacuum vessel;
a stage installed in the vacuum vessel on which the plurality of objects to be processed are placed;
The stage is
a first disc that rotates about a first center point that is the center;
a plurality of second discs provided on the first disc along the outer periphery of the first disc and rotating around a second center point that is the center of each second disc;
a plurality of holding members provided on the second disc, each holding the object to be processed;
In a plan view, a tangent to the orbital circle of the second center point parallel to the first tangent from a first tangent that is in contact with the outer circumference of the first disk, and is further from the first tangent than the first center point. a perpendicular line passing through the center of the magnetic field introduction window and perpendicular to the magnetic field introduction window is positioned in the perpendicular arrangement region up to the second tangent line located on the side. 2. The film removal apparatus according to claim 1, wherein said magnetic field introduction window is composed of a metal plate having a plurality of slits, and a dielectric plate disposed on the atmosphere side of said metal plate and covering said slits. The magnetic field introduction window is arranged to be substantially parallel to the antenna,
3. The film removing apparatus according to claim 2, wherein said slit is formed in said metal plate so that the longitudinal direction of said antenna and the longitudinal direction of said slit are perpendicular to each other. 4. The film removing apparatus according to any one of claims 1 to 3, wherein the rotational speeds of said first disk and said second disk are determined according to the temperature of said object to be processed. 5. The film removing device according to any one of claims 1 to 4, wherein said holding member rotates. The film removing apparatus according to any one of claims 1 to 5, wherein the length of the antenna in the height direction of the object to be treated is longer than the height of the object to be treated.

Images