JP2022523095A - 急速交互プロセスにおいて均一性を向上させるためのマルチロケーションガス注入 - Google Patents
急速交互プロセスにおいて均一性を向上させるためのマルチロケーションガス注入 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 60
- 230000008569 process Effects 0.000 title claims abstract description 45
- 238000002347 injection Methods 0.000 title claims description 17
- 239000007924 injection Substances 0.000 title claims description 17
- 238000005530 etching Methods 0.000 claims abstract description 104
- 238000012545 processing Methods 0.000 claims abstract description 65
- 239000007789 gas Substances 0.000 claims description 325
- 239000000203 mixture Substances 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 30
- 230000008021 deposition Effects 0.000 claims description 24
- 238000010926 purge Methods 0.000 claims description 18
- 239000012530 fluid Substances 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 22
- 238000000231 atomic layer deposition Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 238000005137 deposition process Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000009977 dual effect Effects 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000013049 sediment Substances 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 2
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01J2237/332—Coating
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Abstract
Description
本願は、2019年1月31日出願の米国仮出願第62/799,288号の利益を主張する。上記出願の全ての開示は、参照により本明細書に援用される。
Claims (20)
- 急速交互プロセス(RAP)のために処理チャンバに堆積ガスおよびエッチングガスを提供するように構成されたガス供給システムであって、
堆積ガスマニホールドおよびガス分配装置と流体連通する第1の弁と、
前記第1の弁と前記ガス分配装置との間に配置された第1のオリフィスと、
前記第1の弁と前記ガス分配装置との間に配置された第2のオリフィスと、
エッチングガスマニホールドおよび前記ガス分配装置と流体連通する第2の弁と、
前記第2の弁と前記ガス分配装置との間に配置された第3のオリフィスと、
前記第2の弁と前記ガス分配装置との間に配置された第4のオリフィスと、を備え、
前記第1の弁は、(i)前記第1のオリフィスを通じて前記堆積ガスマニホールドから前記ガス分配装置の第1のゾーンに堆積ガスを提供し、(ii)前記第2のオリフィスを通じて前記堆積ガスマニホールドから前記ガス分配装置の第2のゾーンに前記堆積ガスを提供し、前記第1のオリフィスおよび前記第2のオリフィスは、異なる直径を有し、
前記第2の弁は、(i)前記第3のオリフィスを通じて前記エッチングガスマニホールドから前記ガス分配装置の前記第1のゾーンにエッチングガスを提供し、(ii)前記第4のオリフィスを通じて前記エッチングガスマニホールドから前記ガス分配装置の前記第2のゾーンに前記エッチングガスを提供し、前記第3のオリフィスおよび前記第4のオリフィスは、異なる直径を有する、ガス供給システム。 - 請求項1に記載のガス供給システムであって、
前記第1の弁および前記第2の弁は、10ms以内に開状態と閉状態との間で遷移するように構成された高速切替弁である、ガス供給システム。 - 請求項1に記載のガス供給システムであって、
前記ガス分配装置はシャワーヘッドであり、前記第1のゾーンは前記シャワーヘッドの内側ゾーンであり、前記第2のゾーンは前記シャワーヘッドの外側ゾーンである、ガス供給システム。 - 請求項3に記載のガス供給システムであって、
前記第2のオリフィスの直径は、前記第1のオリフィスの直径よりも大きく、前記第3のオリフィスの直径は、前記第4のオリフィスの直径よりも大きい、ガス供給システム。 - 請求項1に記載のガス供給システムであって、
(i)前記第1のオリフィスおよび前記第2のオリフィスの前記直径は、前記第1のゾーンおよび前記第2のゾーンに第1の所定比の前記堆積ガスを提供するように選択され、(ii)前記第3のオリフィスおよび前記第4のオリフィスの前記直径は、前記第1のゾーンおよび前記第2のゾーンに第2の所定比の前記エッチングガスを提供するように選択される、ガス供給システム。 - 請求項5に記載のガス供給システムであって、さらに、
コントローラであって、(i)前記RAPの堆積サイクル中に、前記第1のゾーンおよび前記第2のゾーンに前記第1の所定比で前記堆積ガスを提供するために前記第1の弁を選択的に開閉し、(ii)前記RAPのエッチングサイクル中に、前記第1のゾーンおよび前記第2のゾーンに前記第2の所定比で前記エッチングガスを提供するために前記第2の弁を選択的に開閉するように構成されたコントローラを備える、ガス供給システム。 - 請求項1に記載のガス供給システムであって、
前記ガス分配装置は、3つ以上のゾーンを備える、ガス供給システム。 - 請求項1に記載のガス供給システムであって、
前記第1のゾーンおよび前記第2のゾーンは、径方向のゾーンである、ガス供給システム。 - 請求項1に記載のガス供給システムであって、
前記第1のゾーンは、前記ガス分配装置の中央の1つの注入点に対応する、ガス供給システム。 - 請求項1に記載のガス供給システムであって、
前記第2のゾーンは、前記ガス分配装置の端の1つの注入点に対応する、ガス供給システム。 - 急速交互プロセス(RAP)のために処理チャンバに堆積ガスおよびエッチングガスを提供するように構成されたガス供給システムであって、
堆積ガスマニホールドおよびガス分配装置と流体連通する第1の流量コントローラと、
前記第1の流量コントローラと前記ガス分配装置との間に配置された第1の弁と、
前記第1の流量コントローラと前記ガス分配装置との間に配置された第2の弁と、
エッチングガスマニホールドおよび前記ガス分配装置と流体連通する第2の流量コントローラと、
前記第2の流量コントローラと前記ガス分配装置との間に配置された第3の弁と、
前記第1の流量コントローラと前記ガス分配装置との間に配置された第4の弁と、を備え、
前記第1の弁は、前記第1の流量コントローラから前記ガス分配装置の第1のゾーンに堆積ガスを提供するように配置され、(ii)前記第2の弁は、前記第1の流量コントローラから前記ガス分配装置の第2のゾーンに前記堆積ガスを提供するように配置され、
前記第3の弁は、前記第2の流量コントローラから前記ガス分配装置の前記第1のゾーンにエッチングガスを提供するように配置され、前記第4の弁は、前記第2の流量コントローラから前記ガス分配装置の前記第2のゾーンに前記エッチングガスを提供するように配置されている、ガス供給システム。 - 請求項11に記載のガス供給システムであって、
前記第1、前記第2、前記第3、および前記第4の弁は、10ms以内に開状態と閉状態との間で遷移するように構成された高速切替弁である、ガス供給システム。 - 請求項11に記載のガス供給システムであって、
前記ガス分配装置はシャワーヘッドであり、前記第1のゾーンは前記シャワーヘッドの内側ゾーンであり、前記第2のゾーンは前記シャワーヘッドの外側ゾーンである、ガス供給システム。 - 請求項11に記載のガス供給システムであって、
(i)前記第1の流量コントローラは、前記第1のゾーンおよび前記第2のゾーンに第1の所定比の前記堆積ガスを提供するように構成され、(ii)前記第2の流量コントローラは、前記第1のゾーンおよび前記第2のゾーンに第2の所定比の前記エッチングガスを提供するように構成されている、ガス供給システム。 - 請求項14に記載のガス供給システムであって、さらに、
コントローラであって、(i)前記RAPの堆積サイクル中に、前記第1のゾーンおよび前記第2のゾーンに前記第1の所定比で前記堆積ガスを提供するために、前記第1の流量コントローラを選択的に調節して前記第1の弁および前記第2の弁を開閉し、(ii)前記RAPのエッチングサイクル中に、前記第1のゾーンおよび前記第2のゾーンに前記第2の所定比で前記エッチングガスを提供するために、前記第2の流量コントローラを選択的に調節して前記第3の弁および前記第4の弁を開閉するように構成されたコントローラを備える、ガス供給システム。 - 請求項11に記載のガス供給システムであって、
前記ガス分配装置は、3つ以上のゾーンを備える、ガス供給システム。 - 請求項11に記載のガス供給システムであって、
前記第1のゾーンおよび前記第2のゾーンは、径方向のゾーンである、ガス供給システム。 - 請求項11に記載のガス供給システムであって、
前記第1のゾーンは、前記ガス分配装置の中央の1つの注入点に対応する、ガス供給システム。 - 請求項11に記載のガス供給システムであって、
前記第2のゾーンは、前記ガス分配装置の端の1つの注入点に対応する、ガス供給システム。 - 処理チャンバにおいて急速交互プロセス(RAP)を実施するための方法であって、
(i)前記処理チャンバ内に基板が配置された状態で、第1の期間に前記処理チャンバに堆積ガス混合物を提供する工程であって、
第1の弁および第1のオリフィスを通じて、堆積ガスマニホールドからガス分配装置の第1のゾーンに前記堆積ガス混合物を提供することと、
前記第1の弁および第2のオリフィスを通じて、前記堆積ガスマニホールドから前記ガス分配装置の第2のゾーンに前記堆積ガスを提供することであって、前記第1のオリフィスおよび前記第2のオリフィスは、異なる直径を有することと、を含む、工程と、
(ii)前記処理チャンバから前記堆積ガス混合物をパージする工程と、
(iii)第2の期間に前記処理チャンバにエッチングガス混合物を提供する工程であって、
第3のオリフィスを通じて、エッチングガスマニホールドから前記ガス分配装置の前記第1のゾーンに前記エッチングガス混合物を提供することと、
第4のオリフィスを通じて、前記エッチングガスマニホールドから前記ガス分配装置の前記第2のゾーンに前記エッチングガス混合物を提供することであって、前記第3のオリフィスおよび前記第4のオリフィスは、異なる直径を有することと、を含む、工程と、
(iv)前記処理チャンバから前記エッチングガス混合物をパージする工程と、
(v)(i)~(iv)を少なくとも1回繰り返す工程と、
を含む、方法。
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