JP2022153835A - Method for manufacturing support member and method for manufacturing semiconductor device - Google Patents

Abstract

To provide a method for manufacturing support members that can produce inexpensive support members with high yield.SOLUTION: A method for manufacturing support pieces comprises the processes of: preparing a laminate film to which an adhesive film is attached via an adhesive layer to a base film; preparing a ring for individualizing the adhesive film; attaching the base film to the ring via the adhesive layer so that the adhesive film is placed inside the ring; and individualizing the adhesive film of the laminated film attached to the ring into a plurality of support pieces. In the attaching process, the laminated film is attached to the ring while applying tension to the laminated film so that the elongation of the laminated film is greater than 100% and equal to or less than 101%.SELECTED DRAWING: Figure 5

Description

The present disclosure relates to a method for manufacturing a support member and a method for manufacturing a semiconductor device.

2. Description of the Related Art A structure in which another semiconductor chip is stacked on top of a semiconductor chip arranged on a substrate is attracting attention as one aspect of a semiconductor device. For example, Patent Literature 1 discloses a configuration in which another semiconductor chip is stacked on top of a semiconductor chip with spacers interposed therebetween. Also, US Pat. No. 6,200,000 discloses a semiconductor die assembly including a controller die and a memory die supported by a support member over the controller die. Such a structure is also called a Dolmen structure, for example.

JP 2007-220913 A Japanese translation of PCT publication No. 2017-515306

For example, in the structure of the semiconductor device disclosed in Patent Document 2, a supporting member including an expensive silicon chip is used. Moreover, in order to manufacture this supporting member, a step of polishing silicon or the like is required before individualizing each supporting member by dicing. Therefore, it has been studied to manufacture an inexpensive support member containing no silicon chip from a resin film, for example, an adhesive film such as DAF (Die attach film). However, when a support member is produced from a resin film that does not contain silicon, voids may occur in the resin film when the resin film is attached to a ring frame for dicing. Such voids cause chips to fly out of the supporting member when the resin film is separated into individual pieces by dicing or the like, thereby reducing the manufacturing yield of the supporting member.

Accordingly, the present disclosure provides a method of manufacturing a supporting member that enables inexpensive supporting members to be manufactured with a high yield, and a method of manufacturing a semiconductor device using the supporting member manufactured by the manufacturing method.

The present disclosure relates to a method of manufacturing a support member. This manufacturing method includes the steps of preparing a laminated film in which an adhesive film is attached to a base film via an adhesive layer, preparing rings for singulating the adhesive film, and forming the adhesive film into a ring. A step of attaching a base film to a ring via an adhesive layer so as to be arranged inside, and a step of separating the adhesive film of the laminated film attached to the ring into a plurality of supporting members are provided. In the affixing step, the laminated film is affixed to the ring while applying tension to the laminated film so that the laminated film has an elongation rate of more than 100% and not more than 101% at the time of lamination.

In the above-described manufacturing method, the laminated film is attached to the ring while tension is applied to the laminated film so that the elongation rate of the laminated film used for manufacturing the support member when attached is greater than 100% and 101% or less. . In this case, since the tension applied to the laminated film is reduced, the elongation force applied to the adhesive film constituting the laminated film is also reduced. reduced. In particular, peeling is likely to occur near the periphery of the base film (adhesive layer) and the adhesive film, but the above-described manufacturing method reduces the peeling of the adhesive film from the base film. As a result, voids are less likely to occur between the laminate comprising the base film and the adhesive layer and the adhesive film. By reducing voids in this way, according to this manufacturing method, it is possible to suppress chip flying or the like during singulation, and to manufacture inexpensive support members with a high yield. Here, the "elongation rate of the laminated film" is a value indicating the elongation rate of the laminated film when attached to the ring, with the laminated film before being attached to the ring as the standard (100%).

In the method for manufacturing the support member described above, in the step of attaching, the laminated film may be attached to the ring while applying tension to the laminated film so that the elongation rate of the laminated film when attached is 100.25% or less. . In this case, since the tension applied to the laminated film is further reduced, it is possible to more reliably suppress wrinkles occurring in the laminated film in the vicinity of the outer periphery of the adhesive film. If the laminated film is wrinkled in the vicinity of the outer periphery of the adhesive film, kerf shift occurs when the adhesive film is singulated, resulting in reduced visibility during pickup after singulation. According to this manufacturing method, it is possible to suppress the occurrence of wrinkles in the base film, thereby suppressing the kerf shift at the time of singulation and improving the visibility at the time of picking up after singulation. can. Therefore, according to this manufacturing method, it is possible to manufacture inexpensive support members with a higher yield. In addition, by being able to suppress the wrinkles of the base film, it is also possible to improve pick-up properties after singulation. In other words, if there are many wrinkles, the tension cannot be properly secured during expansion by the die bonder, and the push-up jig (such as a pin) cannot transmit the force to the adhesive film through the base film and the adhesive layer, resulting in individualization. It may not be possible to peel off the chip that has been removed. On the other hand, by reducing wrinkles, sufficient tension can be ensured during expansion, and stable pickup can be performed.

In the method for manufacturing the supporting member, in the attaching step, the laminated film may be attached to the ring at a rate of 25 mm/sec or less. In this case, it is possible to suppress wrinkles that occur in the laminated film in the vicinity of the outer periphery of the adhesive film. As a result, it is possible to suppress the kerf shift during singulation and improve the visibility during pickup after singulation. In addition, by suppressing wrinkles, it is possible to improve pick-up property itself after singulation. Therefore, according to this manufacturing method, it is possible to manufacture inexpensive support members with a higher yield.

In the method for manufacturing the support member described above, in the attaching step, the laminated film may be attached to the ring at a speed of 10 mm/sec or higher. In this case, it is possible to perform the step of attaching while suppressing the occurrence of voids or wrinkles without reducing the attaching speed of the laminated film so much, and the manufacturing efficiency can be improved.

In the method of manufacturing the support member described above, in the attaching step, the laminated film may be attached to the ring using a roller while being supported only by the ring. In this case, it is possible to manufacture the support member using a conventional device for attaching an adhesive film such as DAF to a wafer such as a silicon wafer. This conventional device is usually provided with a sticking table for sucking the wafer, but according to this manufacturing method, the laminated film is stuck to the ring without separating the laminated film from the sticking table and sticking it. can be attached. Therefore, it is possible to perform the manufacturing method according to the present disclosure using a conventional apparatus.

In the method for manufacturing a support member described above, the laminate comprising the base film and the adhesive layer may have at least one of a tensile strength of 15 MPa or more and 40 MPa or less and an elongation rate of 300% or more and 700% or less. . In this case, it is possible to easily perform the work of attaching the laminate to the ring while the adhesive film is properly held.

In the method for manufacturing a supporting member, the adhesive film may include a pair of surface layers made of a cured product of a thermosetting resin composition and an intermediate layer disposed between the pair of surface layers. good. In this case, the adhesive film has a multilayer structure, and even if the adhesive film is formed to be relatively thick, warping of the adhesive film can be suppressed. By suppressing the warpage in this way, according to this manufacturing method, the thickness of the adhesive film that spreads in the plane direction is made more uniform, and the thickness of the manufactured supporting member can be made more uniform. . In this embodiment, the intermediate layer may be a polyimide layer or a metal layer. Thereby, a support member having excellent strength and heat resistance can be obtained. Note that the thickness of the intermediate layer may be 50 μm or less. As a result, even with a multi-layer structure, the supporting member can be made thin without being so thick.

The present disclosure relates to a method of manufacturing a semiconductor device. This manufacturing method is a method of manufacturing a semiconductor device using a supporting member manufactured by any of the supporting member manufacturing methods described above. In this case, it is possible to manufacture the semiconductor device at low cost by using the support member manufactured at low cost.

According to the present disclosure, it is possible to provide a method for manufacturing a support member that enables manufacturing of an inexpensive support member with a high yield, and a method for manufacturing a semiconductor device using the support member manufactured by the manufacturing method. .

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor device using a support piece manufactured by the manufacturing method according to this embodiment. FIGS. 2A and 2B are plan views schematically showing examples of the positional relationship between the first chip and the plurality of support pieces. FIG. 3(a) is a plan view showing one embodiment of a laminated film for forming a support piece, and FIG. 3(b) shows the laminated film taken along line bb in FIG. 3(a). It is a sectional view. FIG. 4 is a cross-sectional view schematically showing a step of bonding the base film to the adhesive film for forming the support piece via the adhesive layer. 5(a) to 5(d) are cross-sectional views schematically showing the manufacturing process of the supporting piece. FIG. 6 is a perspective view schematically showing the process of attaching the laminated film to the dicing ring. 7(a) to 7(c) are cross-sectional views sequentially showing steps of attaching an adhesive film such as DAF to a wafer and a dicing ring frame in a conventional apparatus. 8(a) to 8(c) are cross-sectional views sequentially showing steps of attaching a laminated film to a dicing ring in the absence of a wafer using the conventional apparatus shown in FIG. FIG. 9 is a cross-sectional view showing a modification of the laminated film. FIG. 10 is a diagram showing one step of the method of manufacturing the semiconductor device shown in FIG. 1, and is a cross-sectional view showing a state in which a plurality of support pieces are arranged around the first chip on the substrate. 11 is a cross-sectional view showing an example of a chip with an adhesive piece used in the method of manufacturing the semiconductor device shown in FIG. 1. FIG. FIG. 12 is a cross-sectional view schematically showing a dolmen structure formed on a substrate, showing one step of the method of manufacturing the semiconductor device shown in FIG. 1 subsequent to FIG. FIG. 13 is a diagram showing the shapes of voids and wrinkles that occur in the laminated film.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and overlapping descriptions are omitted. In addition, unless otherwise specified, positional relationships such as up, down, left, and right are based on the positional relationships shown in the drawings. Furthermore, the dimensional ratios of the drawings are not limited to the illustrated ratios. In this specification, "(meth)acrylic acid" means acrylic acid or methacrylic acid, and "(meth)acrylate" means acrylate or its corresponding methacrylate. "A or B" may include either A or B, or may include both.

In this specification, the term "layer" includes not only a shape structure formed over the entire surface but also a shape structure formed partially when viewed as a plan view. In addition, the term "step" as used herein refers not only to an independent step, but also to the term if the desired action of the step is achieved even if it cannot be clearly distinguished from other steps. included. Further, a numerical range indicated using "-" indicates a range including the numerical values described before and after "-" as the minimum and maximum values, respectively.

In the present specification, the content of each component in the composition refers to the total amount of the multiple substances present in the composition when there are multiple substances corresponding to each component in the composition, unless otherwise specified. means. In addition, unless otherwise specified, the exemplified materials may be used alone, or two or more of them may be used in combination. In addition, in the numerical ranges described stepwise in this specification, the upper limit or lower limit of the numerical range at one stage may be replaced with the upper limit or lower limit of the numerical range at another stage. Moreover, in the numerical ranges described in this specification, the upper and lower limits of the numerical ranges may be replaced with the values shown in the examples.

(semiconductor device)
FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor device using a support piece manufactured by the manufacturing method according to this embodiment. As shown in FIG. 1, a semiconductor device 1 includes a substrate 10, a semiconductor chip 20 (first chip), a semiconductor chip 21 (second chip), a semiconductor chip 22, a semiconductor chip 23, a plurality of supporting pieces 30 (a plurality of support member), adhesive strips 40-43, wires 45-48, and sealing material 50. FIG. Note that the supporting piece manufactured by the manufacturing method according to the present embodiment may be used for manufacturing other semiconductor devices.

The substrate 10 may be an organic substrate or a metal substrate such as a lead frame. From the viewpoint of suppressing warping of the semiconductor device 1, the thickness of the substrate 10 is, for example, 90 to 300 μm, and may be 90 to 210 μm.

The semiconductor chip 20 is, for example, a controller chip (hereinafter also referred to as “CTL”) and is arranged on the surface of the substrate 10 . Semiconductor chip 20 is adhered to substrate 10 by adhesive strip 40 and electrically connected to substrate 10 by wires 45 . The shape of the semiconductor chip 20 in plan view is, for example, a rectangle (square or rectangle). The length of one side of the semiconductor chip 20 is, for example, 5 mm or less, and may be 2 to 5 mm or 1 to 5 mm. The thickness of the semiconductor chip 20 is, for example, 10-150 μm, and may be 20-100 μm.

The semiconductor chip 21 is, for example, a memory chip, and is adhered onto the support piece 30 via the adhesive piece 41 . Thereby, the semiconductor chip 21 is arranged on the semiconductor chip 20 . Also, the adhesive piece 41 is sandwiched between the semiconductor chip 21 and the plurality of support pieces 30 . The semiconductor chip 21 has a larger size than the semiconductor chip 20 in plan view. The shape of the semiconductor chip 21 in plan view is, for example, a rectangle (square or rectangle). The length of one side of the semiconductor chip 21 is, for example, 20 mm or less, and may be 4 to 20 mm or 4 to 12 mm. The thickness of the semiconductor chip 21 is, for example, 10-170 μm, and may be 20-120 μm. The semiconductor chips 22 and 23, like the semiconductor chip 21, are memory chips, for example, and are sequentially adhered onto the semiconductor chip 21 via adhesive pieces 42 and 43. FIG. The length of one side of the semiconductor chips 22 and 23 may be the same as that of the semiconductor chip 21, and the thickness of the semiconductor chips 22 and 23 may also be the same as that of the semiconductor chip 21. FIG.

The support piece 30 is a member that is arranged on the surface of the substrate 10 and around the semiconductor chip 20 and serves as a spacer that forms a space around the semiconductor chip 20 . The support piece 30 is made of, for example, a cured thermosetting resin composition. As shown in FIG. 2(a), two supporting pieces 30 (shape: rectangle) may be arranged at separate positions on both sides of the semiconductor chip 20, or as shown in FIG. 2(b). , one supporting piece 30 (shape: square, four pieces in total) may be arranged at positions corresponding to the corners of the semiconductor chip 20, respectively. The length of one side of the support piece 30 in plan view is, for example, 20 mm or less, and may be 1 to 20 mm or 1 to 12 mm. The thickness (height) of the support piece 30 is, for example, 10 to 180 μm, and may be 20 to 120 μm.

In this embodiment, the semiconductor chip 21 , the plurality of support pieces 30 , and the adhesive pieces 41 positioned between the support pieces 30 and the semiconductor chips 21 form a dolmen structure on the substrate 10 . In the semiconductor device 1 shown in FIG. 1, the semiconductor chip 20 is separated from the adhesive piece 41 . By appropriately setting the thickness of the support piece 30, a space for the wire 45 connecting the upper surface of the semiconductor chip 20 and the substrate 10 can be secured. When the semiconductor chip 20 is flip-chip connected to the electrodes on the substrate 10, the adhesive piece 41 may be in contact with the upper surface of the semiconductor chip 20. FIG.

Wires 45-48 electrically connect electrodes (not shown) on the surface of substrate 10 and semiconductor chips 20-23, respectively. The sealing material 50 fills the gaps between the semiconductor chips 20 and 21 and seals the substrate 10 so as to cover the semiconductor chips 21 to 23 and the wires 46 to 48 as a whole. The sealing material 50 is, for example, epoxy resin.

(Method for producing support piece)
Next, an example of a method for manufacturing a support piece used in the above-described semiconductor device or the like will be described. Note that the support piece 30 shown in FIG. 1 is a product after the thermosetting resin composition has been cured (hardened product). On the other hand, the supporting piece manufactured by this manufacturing method is in a state before the thermosetting resin composition is completely cured.

First, a laminated film 60 for forming support pieces shown in FIGS. 3(a) and 3(b) is prepared. The laminate film 60 includes a base film 61, an adhesive layer 62, and an adhesive film 63 for forming support pieces. The base film 61 and the adhesive layer 62 are formed, for example, in a circular shape by punching or the like (see FIG. 3(a)). The adhesive film 63 is a film that serves as a material for forming the support piece 30 . The adhesive film 63 is formed in a circular shape by punching or the like, and has a smaller diameter than the base film 61 and the adhesive layer 62 (see FIG. 3A).

The base film 61 is, for example, a polypropylene film (PP film) or a polyethylene film (PE film). The adhesive layer 62 is made of, for example, an ultraviolet curing adhesive. That is, the adhesive layer 62 has a property that its adhesiveness is lowered by being irradiated with ultraviolet rays. The base film 61 and the adhesive layer 62 constitute a first laminate 65 (see FIG. 4). The first laminate 65 is, for example, a dicing tape (DCT) and has at least one of a tensile strength of 15 MPa or more and 40 MPa or less and an elongation rate of 300% or more and 700% or less. For the first laminate 65, a base film that stretches easily or a base film that does not stretch easily can be used depending on the application. When a base film that is easily extensible is used, the first laminate 65 can have a tensile strength of 15 MPa or more and less than 30 MPa and an elongation rate of 600% or more and 700% or less. When a base film that is difficult to stretch is used, the first laminate 65 can have a tensile strength of 30 MPa or more and 40 MPa or less and an elongation rate of 300% or more and less than 600%.

The above-mentioned "tensile strength" and "elongation" can be calculated by the following methods. First, a test piece having a width of 10 mm and a length of 50 mm with a chuck-to-chuck distance is prepared by cutting the test piece. A tensile tester specified in JIS B7721 or an equivalent tensile tester is used as the testing device. Then, the test piece is set in this testing device, pulled at a speed of 300±30 mm/min, and the load and elongation until the test piece breaks are measured. From these measured values, "tensile strength" and "elongation" are calculated based on the following formulas.
Tensile strength (MPa) = strength at tape break (N) ÷ tape cross-sectional area (mm ² )
Elongation rate (%) = (length at break (mm) - initial length (50 mm)) / initial length (50 mm)

The adhesive film 63 is made of, for example, a thermosetting resin composition. The thermosetting resin composition that constitutes the adhesive film 63 goes through a semi-cured (B stage) state, and can be turned into a completely cured (C stage) state by a subsequent curing treatment. A thermosetting resin composition contains an epoxy resin, a curing agent, an elastomer (for example, an acrylic resin), and, if necessary, an inorganic filler, a curing accelerator, and the like. The details of the thermosetting resin composition forming the adhesive film 63 will be described later.

The laminate film 60 includes, for example, a first laminate 65 having a base film 61 and an adhesive layer 62 on its surface, and a second laminate 66 having a cover film 64 and an adhesive film 63 on its surface. (See FIG. 4). The first laminate 65 is formed by forming the adhesive layer 62 on the surface of the base film 61 by coating, and processing the base film 61 and the adhesive layer 62 into a predetermined shape (for example, circular) by punching or the like. obtained through the process of The second laminate 66 is formed by coating an adhesive film 63 on the surface of a cover film 64 (for example, PET film or polyethylene film), and punching the adhesive film 63 to a predetermined shape (for example, a circular shape). ) is obtained through the process of processing. When using the laminate film 60, the cover film 64 is peeled off at an appropriate timing.

Subsequently, as shown in (a) of FIG. 5, a ring frame 100 (ring) for dicing is attached to the laminated film 60 described above. That is, the base film 61 is attached to the ring frame 100 via the adhesive layer 62 , and the adhesive film 63 is placed inside the ring frame 100 . As shown in FIG. 6, the ring frame 100 is, for example, a substantially annular ring, and the outer peripheral portion of the laminate 65 including the base film 61 is attached to the ring frame 100 via the adhesive layer 62. . This pasting is performed while being pressed by a pressing member such as a roller 120 (see FIG. 8A) from one end 100a of the ring frame 100 toward the other end 100b. The relative moving speed (sticking speed) of the roller 120 to the ring frame 100 during sticking may be, for example, 5 mm/sec or more, or may be 10 mm/sec or more. The relative movement speed of the rollers 120 may be 40 mm/sec or less, and may be 25 mm/sec or less. In addition, the roller 120 may be fixed so as not to move in the horizontal direction (rotational movement is possible), and the ring frame 100 and the laminated film 60 may move relative to the roller 120. In this case, the roller 120 corresponds to the moving speed of the ring frame 100 and the like.

Also, during this attachment, the laminated film 60 composed of the base film 61, the adhesive layer 62, and the adhesive film 63 is attached to the ring frame 100 with reduced tension so as not to stretch so much. Specifically, the laminate film 60 is attached to the ring frame 100 by applying tension to the laminate film 60 so that the elongation rate of the laminate film 60 is more than 100% and 101% or less when attached. More preferably, the laminate film 60 is attached to the ring frame 100 by applying tension to the laminate film 60 so that the elongation rate of the laminate film 60 is 100.25% or less during attachment. The "elongation rate of the laminated film" as used herein is a value that indicates the ratio of the length (diameter) of the laminated film after lamination when the length (diameter) of the laminated film before lamination is taken as 100%. be.

Subsequently, when the laminated film 60 has been attached to the ring frame 100, the adhesive film 63 is separated into individual pieces by dicing, as shown in FIG. 5(b). As a result, a large number of supporting pieces 63 a are obtained from the adhesive film 63 . Thereafter, by irradiating the adhesive layer 62 with ultraviolet rays, the adhesive strength between the adhesive layer 62 and the support piece 63a is reduced.

Subsequently, when the ultraviolet irradiation is completed, the support pieces 63a are separated from each other by expanding the base film 61 as shown in FIG. 5(c). Then, as shown in (d) of FIG. 5, each support piece 63a is pushed up by a push-up jig 111 to separate the support piece 63a from the adhesive layer 62, and the suction collet 112 sucks the support piece 63a to pick up the support piece 63a. do. The curing reaction of the thermosetting resin may be advanced by heating the adhesive film 63 before dicing or the support piece 63a before picking up. When the support piece 63a is moderately hardened at the time of picking up, an excellent picking property can be achieved.

Here, with reference to FIGS. 7 and 8, the reason why the first laminate 65 is attached to the ring frame 100 at a predetermined attachment speed and elongation rate in the method for manufacturing the support piece 30 described above will be described. 7(a) to 7(c) are cross-sectional views sequentially showing steps of attaching an adhesive film such as DAF to a wafer and a dicing ring frame in a conventional apparatus. 8(a) to 8(c) are cross-sectional views sequentially showing steps of attaching a laminated film to a ring frame for dicing without a wafer using the conventional apparatus shown in FIG.

As shown in FIG. 7, the conventional device 110 has a sticking table 115 for placing a wafer W such as a silicon wafer. Then, as shown in FIG. 7(b), after the wafer W is placed on the bonding table 115, the dicing tape T is pressed onto the wafer W by a roller 120 as shown in FIG. 7(c). pasted. At this time, the upper surface of the wafer W and the upper surface of the ring frame 100 are substantially flush, and the dicing tape T can be easily applied to the wafer W supported by the application table 115 .

However, as shown in FIG. 8, when the conventional device 110 is used to fabricate a support piece 30 that does not have silicon, the suction function of the sticking table 115 does not affect it (or the sticking table 115 is not affected). 8(b), it is necessary to move the pasting table 115 downward by, for example, about 10 mm from its normal position. In this case, as shown in (c) of FIG. 8, when the laminated film 60 is attached to the ring frame 100 using the roller 120, the first laminated body 65 including the base film 61 and the adhesive film 63 are separated from each other. (particularly in the outer peripheral region S), peeling occurs, and voids and wrinkles are likely to occur. On the other hand, in the method for manufacturing a support piece according to the present embodiment, the lamination film 60 is affixed at the affixing speed and the elongation rate (the applied tension is reduced) within the ranges described above. The laminate film 60 is attached to the ring frame 100 while suppressing the generation of voids and wrinkles between the laminate 65 and the adhesive film 63 . As a result, it is possible to prevent chips from flying during pickup and to improve visibility.

(Thermosetting resin composition forming adhesive film 63)
Next, the thermosetting resin composition forming the adhesive film 63 for forming the support piece 30 will be described in detail. As described above, this thermosetting resin composition contains an epoxy resin, a curing agent, and an elastomer, and if necessary, further contains an inorganic filler, a curing accelerator, and the like. According to the studies of the present inventors, it is preferable that the supporting piece 63a and the cured supporting piece 30 have the following characteristics.
・Characteristic 1: When the support piece 30 is thermocompression bonded to a predetermined position of the substrate 10, positional deviation is unlikely to occur (the melt viscosity of the support piece 30 at 120 ° C. is, for example, 4300 to 50000 Pa s or 5000 to 40000 Pa s be)
・Characteristic 2: The support piece 30 exhibits stress relaxation in the semiconductor device 1 (the thermosetting resin composition contains an elastomer (rubber component))
・Characteristic 3: Adhesion strength between the chip with adhesive piece and the adhesive piece 41 is sufficiently high (die shear strength of the support piece 30 with respect to the adhesive piece 41 is, for example, 2.0 to 7.0 Mpa or 3.0 to 3.0 Mpa). 6.0Mpa)
・Characteristic 4: The shrinkage rate accompanying curing is sufficiently small. )
・Characteristic 6: The supporting piece 30 has sufficient mechanical strength

[Epoxy resin]
The epoxy resin is not particularly limited as long as it cures and has an adhesive action. Bifunctional epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin and bisphenol S type epoxy resin, novolak type epoxy resin such as phenol novolak type epoxy resin, cresol novolak type epoxy resin, etc. can be used. In addition, commonly known resins such as polyfunctional epoxy resins, glycidylamine type epoxy resins, heterocycle-containing epoxy resins, and alicyclic epoxy resins can be applied. These may be used individually by 1 type, and may use 2 or more types together.

[Curing agent]
Curing agents include, for example, phenolic resins, ester compounds, aromatic amines, aliphatic amines and acid anhydrides. Among these, phenol resins are preferred from the viewpoint of achieving high die shear strength. Examples of commercially available phenolic resins include LF-4871 (trade name, BPA novolac type phenolic resin) manufactured by DIC Corporation, HE-100C-30 (trade name, phenylarachyl type phenolic resin), Phenolite KA and TD series manufactured by DIC Corporation, Millex XLC-series and XL series manufactured by Mitsui Chemicals, Inc. (for example, Millex XLC-LL), HE series manufactured by Air Water Co., Ltd. (eg HE100C-30), MEHC-7800 series (eg MEHC-7800-4S) manufactured by Meiwa Kasei Co., Ltd., and JDPP series manufactured by JEF Chemical Co., Ltd. These may be used individually by 1 type, and may use 2 or more types together.

From the viewpoint of achieving high die shear strength, the epoxy resin and phenol resin are preferably mixed in an equivalent ratio of epoxy equivalent to hydroxyl group equivalent of 0.6 to 1.5, preferably 0.7 to 1.4. more preferably 0.8 to 1.3. When the blending ratio is within the above range, both curability and fluidity can be easily achieved at sufficiently high levels.

[Elastomer]
Examples of elastomers include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene, and carboxy-modified acrylonitrile.

From the viewpoint of achieving high die shear strength, an acrylic resin is preferable as the elastomer, and an epoxy group-containing polymer obtained by polymerizing a functional monomer having an epoxy group or a glycidyl group as a crosslinkable functional group, such as glycidyl acrylate or glycidyl methacrylate. Acrylic resins such as (meth)acrylic copolymers are more preferred. Among acrylic resins, epoxy group-containing (meth)acrylic acid ester copolymers and epoxy group-containing acrylic rubbers are preferable, and epoxy group-containing acrylic rubbers are more preferable. Epoxy-group-containing acrylic rubber is a rubber having an epoxy group, which is mainly composed of an acrylic acid ester and is mainly composed of a copolymer such as butyl acrylate and acrylonitrile, or a copolymer such as ethyl acrylate and acrylonitrile. The acrylic resin may have not only epoxy groups but also crosslinkable functional groups such as alcoholic or phenolic hydroxyl groups and carboxyl groups.

Commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, SG-P3 manufactured by Nagase Chemtech Co., Ltd. (trade name, acrylic rubber, weight average molecular weight: 800,000, Tg: 12° C., solvent is cyclohexanone) and the like.

The glass transition temperature (Tg) of the acrylic resin is preferably -50 to 50°C, more preferably -30 to 30°C, from the viewpoint of achieving high die shear strength. The weight average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 3,000,000, more preferably 500,000 to 2,000,000 from the viewpoint of achieving high die shear strength. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve. By using an acrylic resin with a narrow molecular weight distribution, there is a tendency to form highly elastic adhesive pieces.

From the viewpoint of achieving high die shear strength, the amount of acrylic resin contained in the thermosetting resin composition is preferably 10 to 200 parts by mass with respect to a total of 100 parts by mass of the epoxy resin and epoxy resin curing agent. It is more preferably 20 to 100 parts by mass.

[Inorganic filler]
Inorganic fillers such as aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride and crystalline Silica and amorphous silica can be mentioned. These may be used individually by 1 type, and may use 2 or more types together.

From the viewpoint of achieving high die shear strength, the average particle size of the inorganic filler is preferably 0.005 μm to 1.0 μm, more preferably 0.05 to 0.5 μm. From the viewpoint of achieving high die shear strength, the surface of the inorganic filler is preferably chemically modified. Silane coupling agents are suitable materials for chemically modifying the surface. Examples of types of functional groups in the silane coupling agent include vinyl groups, acryloyl groups, epoxy groups, mercapto groups, amino groups, diamino groups, alkoxy groups, and ethoxy groups.

From the viewpoint of achieving high die shear strength, the content of the inorganic filler is preferably 20 to 200 parts by mass, more preferably 30 to 100 parts by mass, with respect to 100 parts by mass of the resin component of the thermosetting resin composition. is more preferred.

[Curing accelerator]
Curing accelerators include, for example, imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. From the viewpoint of achieving high die shear strength, imidazole compounds are preferred. Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used individually by 1 type, and may use 2 or more types together.

From the viewpoint of achieving high die shear strength, the content of the curing accelerator in the thermosetting resin composition is preferably 0.04 to 3 parts by mass with respect to the total of 100 parts by mass of the epoxy resin and the epoxy resin curing agent. 0.04 to 0.2 parts by mass is more preferred.

Also, the adhesive film that serves as the support piece 30 may be formed of multiple layers. FIG. 9 is a cross-sectional view showing a laminated film 60A according to a modification. As shown in FIG. 9, the laminate film 60A has a base film 61, an adhesive layer 62, and an adhesive film 63A. The adhesive film 63A includes a pair of surface layers 66a and 66b made of any of the thermosetting resin compositions described above and an intermediate layer 67 disposed between the pair of surface layers 66a and 66b. . The thickness of the surface layers 66a, 66b is, for example, 5-60 μm, and may be 5-25 μm or 5-20 μm. The thickness of the intermediate layer 67 is, for example, 5-75 μm, and may be 10-75 μm or 10-50 μm. The tensile modulus of the intermediate layer 67 is, for example, 8.0 MPa or more, and may be 9.0 MPa or more or 10.0 MPa or more. Since the intermediate layer 67 has a tensile elastic modulus of 8.0 MPa or more, the intermediate layer 67 plays a role like a spring plate in the process of picking up the support piece 63a (see FIG. 5(d)), and is excellent. A pick-up property can be achieved. Note that the upper limit of the tensile modulus of the intermediate layer 67 is about 15 MPa from the viewpoint of availability of the material. The intermediate layer 67 is composed of, for example, a resin layer such as polyimide or polyethylene terephthalate (PET), or a metal layer. The intermediate layer 67 may be a layer made of a thermosetting resin composition or a photocurable resin composition that has undergone a curing treatment so that the tensile elastic modulus is within the above range.

(Method for manufacturing semiconductor device)
Here, a method of manufacturing the semiconductor device 1 having a three-dimensional mounting structure using the supporting piece 30 manufactured by the manufacturing method described above will be described with reference to FIGS. 10 to 12. FIG. FIG. 10 is a diagram showing one step of the method of manufacturing the semiconductor device 1, and is a cross-sectional view showing a state in which a plurality of support pieces 30 are arranged around the semiconductor chip 20 on the substrate 10. As shown in FIG. FIG. 11 is a cross-sectional view showing an example of a chip with an adhesive piece used in the manufacturing method of the semiconductor device 1. FIG. FIG. 12 is a diagram showing one step of the manufacturing method of the semiconductor device 1 following FIG.

The method for manufacturing a semiconductor device according to this embodiment includes the following steps (A) to (G).
(A) Step of preparing a plurality of support pieces 30 (see (a) to (d) of FIG. 5)
(B) a step of arranging the semiconductor chip 20 on the substrate 10;
(D) A step of preparing a chip 21a with an adhesive piece, which includes a semiconductor chip 21 and an adhesive piece 41 provided on one surface of the semiconductor chip 21 (see FIG. 11).
(E) A step of constructing a dolmen structure by placing chips 21a with adhesive strips on the surfaces of a plurality of support strips 30 (see FIG. 12).
(F) a step of stacking additional semiconductor chips 22 and 23 on the semiconductor chip 21 (see FIG. 1);
(G) A step of sealing the substrate 10 with a sealing material 50 so as to fill the gaps between the semiconductor chips 20 and 21 and cover the semiconductor chips 21 to 23 and wires 46 to 48 (see FIG. 1).

The steps (A) to (G) are processes for constructing a dolmen structure on the substrate 10 using a plurality of support pieces 30. FIG. In step (A), a predetermined number of supporting pieces 30 manufactured by the manufacturing method shown in FIG. 5 and the like are prepared. In the step (A), the supporting piece 30 may be manufactured by the manufacturing method shown in FIG. 5 or the like, or the manufactured supporting piece 30 may be obtained.

[(B) step]
(B) is a step of arranging the semiconductor chip 20 on the substrate 10 . For example, first, the semiconductor chip 20 is mounted at a predetermined position on the substrate 10 via the adhesive piece 40 . After that, the semiconductor chip 20 is electrically connected to the substrate 10 by wires 45 .

[(C) step]
(C) is a step of arranging a plurality of support pieces 30 around the semiconductor chip 20 on the substrate 10 . Through this process, the structure T shown in FIG. 10 is produced. The structure T includes a substrate 10, a semiconductor chip 20 arranged on the surface thereof, and a plurality of support pieces 30. As shown in FIG. Arrangement of the support piece 30 may be performed by a crimping process. The crimping treatment is preferably performed, for example, under conditions of 80 to 180° C. and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds. The support piece 30 may be a completely cured support piece at the time of the step (C), or may not be completely cured at this time. It is preferable that the supporting piece 30 is a completely cured supporting piece before the start of the step (C).

[(D) step]
(D) is a step of preparing a chip 21a with an adhesive piece shown in FIG. The chip 21a with an adhesive strip includes a semiconductor chip 21 and an adhesive strip 41 provided on one surface thereof. The chips 21a with adhesive strips can be obtained, for example, by using a semiconductor wafer and a dicing/die-bonding integrated film through a dicing process and a pick-up process.

[(E) step]
The step (E) is a step of disposing the chip 21 a with the adhesive strips above the semiconductor chip 20 so that the adhesive strips 41 are in contact with the upper surfaces of the plurality of supporting strips 30 . Specifically, the semiconductor chip 21 is pressure-bonded to the upper surface of the support piece 30 via the adhesive piece 41 . This pressure-bonding treatment is preferably performed, for example, under conditions of 80 to 180° C. and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds. The adhesive strip 41 is then cured by heating. This curing treatment is preferably carried out, for example, under conditions of 60 to 175° C. and 0.01 to 1.0 MPa for 5 minutes or longer. Thereby, the adhesive piece 41 is cured. Through this process, a dolmen structure is constructed on the substrate 10 (see FIG. 12).

[(F) step]
In step (F), the semiconductor chip 22 is placed on the semiconductor chip 21 with the adhesive piece 42 interposed therebetween, and the semiconductor chip 23 is further placed on the semiconductor chip 22 with the adhesive piece 43 interposed therebetween. The adhesive pieces 42 and 43 may be the same thermosetting resin composition as the adhesive pieces 40 and 41 described above, and become adhesive pieces by heat curing (see FIG. 1). On the other hand, the semiconductor chips 21, 22, 23 and the substrate 10 are electrically connected by wires 46-48, respectively. The number of chips stacked above the semiconductor chip 20 is not limited to three in this embodiment, and can be set as appropriate.

[(G) step]
In the step (G), the substrate 10 is sealed with a sealing material 50 so as to fill the gaps between the semiconductor chips 20 and 21 and cover the semiconductor chips 21 to 23 and wires 46 to 48 (FIG. 1). reference). The sealing material 50 contains, for example, epoxy resin. Through this process, the semiconductor device 1 shown in FIG. 1 is completed.

As described above, in the method for manufacturing the supporting piece according to the present embodiment, tension is applied to the laminated film 60 so that the elongation rate of the laminated film 60 used for producing the supporting piece 30 is more than 100% and 101% or less when attached. The lamination film 60 is attached to the ring frame 100 while the lamination film 60 is attached. As a result, the tension applied to the laminated film 60 is reduced, and the elongation force applied to the adhesive film 63 constituting the laminated film 60 as the laminated film 60 is stretched is also reduced. Peeling of the adhesive film 63 from the base film 61 is reduced. Peeling of the adhesive film 63 from the base film 61 and the adhesive layer 62 is particularly likely to occur in the vicinity of the periphery of the base film 61 and the adhesive layer 62 . As a result, voids are less likely to occur between the laminate 65 including the base film 61 and the adhesive film 63 . By reducing voids in this way, according to this manufacturing method, it is possible to suppress chip flying or the like during singulation, and to manufacture inexpensive support members with a high yield.

In addition, in the method for manufacturing a support piece according to the present embodiment, the laminated film 60 is attached to the ring frame 100 while applying tension to the laminated film 60 so that the elongation rate of the laminated film 60 at the time of attachment is 100.25% or less. You can paste it. In this case, since the tension applied to the laminated film 60 is further reduced, wrinkles occurring in the laminated body 65 in the vicinity of the outer periphery of the adhesive film 63 can be more reliably suppressed. If the laminated film 60 is wrinkled in the vicinity of the outer periphery of the adhesive film 63, kerf shift occurs when the adhesive film 63 is singulated, and the visibility during picking up after singulation is reduced. According to this manufacturing method, it is possible to suppress the occurrence of wrinkles in the base film 61, thereby suppressing the kerf shift during singulation and improving the visibility during pickup after singulation. can be done. Therefore, according to this manufacturing method, it is possible to manufacture inexpensive support members with a higher yield. In addition, by being able to suppress the wrinkles of the base film 61, it is also possible to improve pick-up properties after singulation. That is, if there are many wrinkles, the tension cannot be properly secured during expansion by the die bonder, and the push-up jig (such as a pin) cannot transmit the force to the adhesive film 63 through the base film 61 and the adhesive layer 62, and the individual Chipped chips may not be peeled off. On the other hand, by reducing wrinkles, sufficient tension can be ensured during expansion, and stable pickup can be performed.

Further, in the method for manufacturing the supporting piece according to the present embodiment, the laminated film 60 may be attached to the ring frame 100 at a speed of 25 mm/sec or less. In this case, wrinkles occurring in the laminate 65 near the outer periphery of the adhesive film 63 can be suppressed. As a result, it is possible to suppress the kerf shift during singulation and improve the visibility during pickup after singulation. In addition, by suppressing wrinkles, it is possible to improve pick-up property itself after singulation. Therefore, according to this manufacturing method, it is possible to manufacture inexpensive support members with a higher yield.

In addition, in the method of manufacturing the supporting piece according to the present embodiment, the laminated film 60 may be attached to the ring frame 100 at a speed of 10 mm/sec or higher. In this case, the lamination film 60 can be adhered while suppressing the occurrence of voids or wrinkles without reducing the lamination speed so much, and the production efficiency can be improved.

In addition, in the method of manufacturing the supporting piece according to the present embodiment, the laminated film 60 may be attached to the ring frame 100 using the roller 120 while being supported only by the ring frame 100 . In this case, it is possible to manufacture the support piece using the conventional apparatus 110 for attaching an adhesive film such as DAF to a wafer W such as a silicon wafer. The conventional apparatus 110 is usually provided with a sticking table 115 for sucking the wafer W. According to this manufacturing method, the laminated film 60 is not separated from the sticking table 115 and sucked. can be attached to the ring frame 100. Therefore, it becomes possible to perform this manufacturing method using a conventional apparatus.

In addition, in the method for manufacturing a support piece according to the present embodiment, the laminate 65 composed of the base film 61 and the adhesive layer 62 has a tensile strength of 15 MPa or more and 40 MPa or less and an elongation rate of 300% or more and 700% or less. You may have at least one. In this case, it is possible to easily perform the work of attaching the laminated film 60 to the ring frame 100 while the adhesive film 63 is properly held.

In addition, in the method for manufacturing the support piece according to the present embodiment, the adhesive film 63A is arranged between the pair of surface layers 66a and 66b made of the cured product of the thermosetting resin composition and between the pair of surface layers 66a and 66b. and an intermediate layer 67 having a In this case, the adhesive film 63A has a multilayer structure, and even if the adhesive film 63A is formed to be relatively thick, warping of the adhesive film 63A can be suppressed. By suppressing warping in this way, according to this manufacturing method, the thickness of the adhesive film that spreads in the plane direction can be made more uniform, and the thickness of the manufactured support piece can be made more uniform. . In this embodiment, intermediate layer 67 may be a polyimide layer or a metal layer. This makes it possible to obtain a support piece having excellent strength and heat resistance. Note that the thickness of the intermediate layer 67 may be 50 μm or less. As a result, even with a multi-layer structure, the supporting piece can be made thin without being so thick.

Although the embodiments of the present disclosure have been described above in detail, the present invention is not limited to the above embodiments. For example, in the above-described embodiment, the manufacturing method of the supporting piece 30 used for the semiconductor device having the dolmen structure has been described, but the supporting piece 30 may be used as a member of other semiconductor devices, and is not particularly limited. Moreover, although the laminate film 60 having the ultraviolet curable adhesive layer 62 is illustrated, the adhesive layer 62 may be pressure sensitive.

EXAMPLES The present invention will be described in more detail with reference to examples below, but the present invention is not limited to the examples.

In the following examples, the lamination film 60A having the configuration shown in FIG. 9 was attached to a ring frame, and the occurrence of voids and wrinkles between the lamination body 65 and the adhesive film 63A was confirmed. The bonding apparatus used here was a fully automatic wafer mounter DFM2800 manufactured by DISCO Corporation. The ring frame had an outer diameter of 380 mm and an inner diameter of 350 mm.

Moreover, the compounds used in each example are as follows.

(Laminate)
As the laminate 65, two types of laminate A and laminate B were prepared.

<Production of laminate A>
A copolymer was obtained by solution radical polymerization using 78 parts by mass of 2-ethylhexyl acrylate, 20 parts by mass of 2-hydroxyethyl acrylate, and 2 parts by mass of methacrylic acid as raw materials and ethyl acetate as the solvent. . Next, this acrylic copolymer was reacted with 8 parts by weight of 2-methacryloyloxyethyl isocyanate to synthesize a radiation-reactive acrylic copolymer having a carbon-carbon double bond. In the above reaction, 0.05 part of hydroquinone monomethyl ether was used as a polymerization inhibitor. When the weight average molecular weight of the synthesized acrylic copolymer was measured by GPC, it was 800,000.

The acrylic copolymer obtained in this way, a polyisocyanate compound (Tosoh Corporation, trade name: Coronate L) as a curing agent, 8.0 parts in terms of solid content, and 1-hydroxy as a photopolymerization initiator 0.5 part of cyclohexylphenyl ketone was mixed to prepare a radiation-curable adhesive solution. Next, the radiation-curable pressure-sensitive adhesive solution obtained as described above was applied onto a release film made of polyethylene terephthalate (thickness: 38 μm) and dried so that the thickness after drying would be 10 μm. After that, a polyolefin film (thickness: 90 μm) having one surface subjected to corona discharge treatment was attached to the pressure-sensitive adhesive layer. The bonded sample was aged in a constant temperature bath at 40° C. for 72 hours to prepare a laminate A.

<Production of laminate B>
For the adhesive, an acrylic copolymer was obtained by solution polymerization using 2-ethylhexyl acrylate and methyl methacrylate as main monomers and hydroxyethyl acrylate and acrylic acid as functional group monomers. The synthesized acrylic copolymer had a weight average molecular weight of 400,000 and a glass transition point of -38°C. A pressure-sensitive adhesive solution was prepared by blending 10 parts by weight of a polyfunctional isocyanate cross-linking agent (manufactured by Mitsubishi Chemical Corporation, trade name: Mitec NY730A-T) with 100 parts by weight of this acrylic copolymer, and surface release treatment was performed. It was coated on polyethylene terephthalate (thickness: 25 µm) and dried so that the adhesive had a dry thickness of 30 µm. After that, a three-layered polyolefin film (thickness: 80 μm) in which an ethylene-vinyl copolymer resin having one side subjected to corona discharge treatment was sandwiched between polypropylene was attached to the pressure-sensitive adhesive layer. The bonded sample was aged in a constant temperature bath at 40° C. for 72 hours to prepare a dicing pressure-sensitive adhesive sheet.

The tensile strength and elongation of the laminated body A and the laminated body B having the configurations described above were the values shown in Table 1 below.

(adhesive film)
As the adhesive film, the three-layered adhesive film 63A shown in FIG. 9 was used as described above. The thermosetting resin composition forming the surface layers 66a and 66b of the adhesive film 63A contained the following (a) to (h).

(Preparation of varnish A)
A varnish A for the support piece forming film was prepared using the following materials.
(a) Epoxy resin: YDCN-700-10: (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., cresol novolac type epoxy resin, solid at 25 ° C.) 13.2 parts by mass (b) Phenolic resin (curing agent): HE-100C-30: (trade name, manufactured by Air Water Inc., phenylarachyl-type phenolic resin) 11.0 parts by mass (c) Inorganic filler: Aerosil R972: (trade name, manufactured by Nippon Aerosil Co., Ltd., Silica, average particle size 0.016 μm) 7.8 parts by mass (d) Elastomer: SG-P3 solvent modified product (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12 ℃, solvent is cyclohexanone) 66.4 parts by mass (e) Coupling agent 1: A-189: (trade name, manufactured by GE Toshiba Corporation, γ-mercaptopropyltrimethoxysilane) 0.4 parts by mass (f) Coupling agent 2: A-1160: (trade name, manufactured by GE Toshiba Corporation, γ-ureidopropyltriethoxysilane) 1.15 parts by mass (g) Curing accelerator: Cursol 2PZ-CN: (trade name, Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole) 0.03 parts by mass (h) solvent: cyclohexane

As described above, cyclohexanone was used as a solvent, and the solid content of varnish A was adjusted to 16% by mass. Varnish A was filtered through a 100-mesh filter and vacuum defoamed. A release-treated polyethylene terephthalate (PET) film (thickness: 38 μm) was prepared as the film to which the varnish A was applied. Varnish A after vacuum defoaming was applied onto the release-treated surface of the PET film. The applied varnish A was heat-dried in two steps of 90° C. for 5 minutes and then 140° C. for 5 minutes. Thus, a B-stage (semi-cured) thermosetting resin layer A was formed on the surface of the PET film.

The intermediate layer 67 of the adhesive film 63A was made of polyimide (manufactured by Ube Industries, Ltd., trade name: Upilex 50SGA, thickness 50 μm).

Next, thermosetting resin layers 66a and 66b are prepared and laminated on both sides of the intermediate layer 67 with rubber rolls on a hot plate at 70° C. to form an adhesive film 63A, which is then laminated to the laminate 65 at room temperature with rubber rolls to form laminated film 60A. got

Tables 2 and 3 below show the evaluation results of laminating the laminated film 60A to the ring frame 100 at a predetermined elongation rate and laminating speed during lamination. In the tests shown in Tables 2 and 3 below, the laminate A and the laminate B were used as the laminate 65 . Here, the "elongation rate of the laminated film" is a value indicating the elongation rate of the laminated film when attached to the ring frame, with the laminated film before being attached to the ring frame as the standard (100%). Also, the sticking speed is the relative moving speed of the sticking roller when sticking the laminated film 60A to the ring frame.

"Evaluation A" of the void test in Tables 2 and 3 above indicates the results in which the occurrence of voids could not be confirmed. "Evaluation B" in the void test indicates that the size of voids generated after laminating the laminated film is within a range of 5 mm at most (see Fig. 13). "Evaluation C" in the void test indicates that the maximum size of voids generated after laminating the laminated film is 5 mm or more (see Fig. 13).

"Evaluation A" in the wrinkle test in Tables 2 and 3 above indicates results in which the occurrence of wrinkles could not be confirmed. "Evaluation C" in the wrinkle test indicates that many wrinkles were generated and many voids were generated in the laminate (dicing tape) attached to the ring frame (see FIG. 13).

"Evaluation A" in the dicing property test in Tables 2 and 3 above indicates the result that chip fly did not occur during dicing. "Evaluation B" in the dicing property test indicates the result that several chips flew during dicing. "Evaluation C" in the dicing performance test indicates the result of several tens or more chips flying during dicing.

"Evaluation A" in the visibility test at the time of die bonding in Tables 2 and 3 above indicates a result in which no die bonding recognition error occurred. "Evaluation C" in the visibility test at the time of die bonding indicates the result of frequent die bonding recognition errors.

As is clear from the above test results, the laminated film is attached to the ring frame while applying tension to the laminated film so that the elongation rate of the laminated film used for producing the support piece is greater than 100% and 101% or less. It was confirmed that voids can be reduced. In addition, wrinkles can be reduced by attaching the laminated film to the ring frame while applying tension to the laminated film including the base film so that the elongation rate of the laminated film used for producing the support piece is 100.25% or less. was confirmed. It was also confirmed that voids and wrinkles can be reduced by slowing the application speed to 25 mm/sec or less.

DESCRIPTION OF SYMBOLS 1... Semiconductor device 10... Substrate 20... Semiconductor chip (first chip) 21... Semiconductor chip (second chip) 30... Support piece (support member) 60, 60A... Laminated film 61... Base Material film 62 Adhesive layer 63 Adhesive film 63a Support piece 65 Laminate 66a, 66b Surface layer 67 Intermediate layer 100 Ring frame (ring) 120 Roller.

Claims (10)

A step of preparing a laminated film in which an adhesive film is attached to a base film via an adhesive layer;
preparing a ring for singulating the adhesive film;
a step of attaching the base film to the ring via the adhesive layer such that the adhesive film is arranged inside the ring;
a step of singulating the adhesive film of the laminated film attached to the ring into a plurality of supporting members;
with
In the attaching step, the laminated film is attached to the ring while applying tension to the laminated film so that the elongation rate of the laminated film is greater than 100% and equal to or less than 101%. In the attaching step, the laminated film is attached to the ring while applying tension to the laminated film so that the elongation rate of the laminated film is 100.25% or less.
A method for manufacturing the support member according to claim 1 . In the attaching step, the laminated film is attached to the ring so that the speed of attaching the laminated film to the ring is 25 mm/sec or less.
3. A method of manufacturing a support member according to claim 1 or 2. In the attaching step, the laminated film is attached to the ring so that the laminated film is attached to the ring at a speed of 10 mm/sec or more.
A method for manufacturing a support member according to any one of claims 1 to 3. In the attaching step, the laminated film is attached to the ring using a roller while being supported only by the ring.
A method for manufacturing a support member according to any one of claims 1 to 4. The laminate composed of the base film and the adhesive layer has at least one of a tensile strength of 15 MPa or more and 40 MPa or less and an elongation rate of 300% or more and 700% or less.
A method for manufacturing a support member according to any one of claims 1 to 5. The adhesive film comprises a pair of surface layers made of a cured product of a thermosetting resin composition, and an intermediate layer disposed between the pair of surface layers.
A method for manufacturing a support member according to any one of claims 1 to 6. wherein the intermediate layer is a polyimide layer or a metal layer;
A method for manufacturing the support member according to claim 7 . The intermediate layer has a thickness of 50 μm or less,
A method for manufacturing a support member according to claim 7 or 8. A method for manufacturing a semiconductor device, comprising manufacturing a semiconductor device using a support member manufactured by the method for manufacturing a support member according to any one of claims 1 to 9.

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