JP2022153671A - Wavelength conversion member, wavelength conversion device and laser irradiation device using the same, and manufacturing method of wavelength conversion member - Google Patents

Abstract

To provide a wavelength conversion member capable of easily converting a wavelength of laser beams outputted from a laser irradiation device into a wavelength differing from that and capable of amplifying the laser beams even when the output of the laser irradiation device is low.SOLUTION: A wavelength conversion member 34 includes a laser light guide 32 including a core part 36 for guiding laser beams and a clad 37 disposed around the core part. The wavelength conversion member 34 includes a Raman wavelength conversion part 34 in which a wavelength conversion substance is diffused and arranged by adding a mixture of liquid silica and a wavelength conversion substance as dope to the core part 36 in one end side of the laser light guide 32, and one portion of the diffused and arranged wavelength conversion member is connected to Si in liquid silica and is arranged. When laser beams enter the wavelength conversion part 34, laser beams by Raman scattered light wavelength-converted to a wavelength differing from a wavelength of laser beams are outputted by generation of a Raman effect based on a wavelength conversion substance in the Raman wavelength conversion part 34.SELECTED DRAWING: Figure 3

Description

TECHNICAL FIELD The present invention relates to a wavelength conversion member, a wavelength conversion device and a laser irradiation device using the same, and a method for manufacturing a wavelength conversion member.

2. Description of the Related Art Conventionally, lasers have been used in the medical field and the like. Lasers are roughly classified into solid lasers, gas lasers, liquid lasers, and semiconductor lasers according to their types. Among them, lasers mainly used in the dental medical field are carbon dioxide lasers, Nd:YAG lasers, semiconductor lasers, and Er:YAG lasers. When these laser beams are emitted, they are transmitted into the oral cavity using various optical fibers, the tip of the fiber is inserted into a narrow local area in the oral cavity, and the laser beam emitted from the tip is irradiated to the affected area for treatment. .

Here, as a laser for dental medical treatment, a semiconductor laser is used in a wavelength range of 800 to 1000 nm, is generally tissue-transmissive, has high heat absorption into red blood cells, and under low power, it is difficult to activate cells. It is used as a laser for soft tissue, which is expected to be improved.
The Er:YAG laser has a central wavelength of 2940 nm and is a water-based soft and hard tissue laser. Moreover, the Er:YAG laser has a strong power to excite water molecules and cause a vapor explosion, and is used as a laser for cutting teeth, gums, bones, etc., using this ability.

As a dental treatment using such a laser irradiation apparatus, a dental treatment apparatus using a semiconductor laser has been disclosed (see Patent Document 1). This dental treatment apparatus includes a first light source that outputs first light having a central wavelength within a wavelength range of 400 nm to 410 nm, and inputs the first light output from the first light source to an incident end. An optical waveguide body that guides the guided first light from the output end and irradiates the output first light to the treatment area, and the analysis that analyzes the light received by the light receiving part means, and display means for displaying analysis results analyzed by the analysis means.

Further, for medical treatment and dental treatment, an irradiation apparatus using an Er:YAG laser as a solid laser is disclosed (see Patent Document 2). The illumination device is configured such that its elongated body contains two or more optical fibers to transmit electromagnetic energy from the power source towards the target surface. The distal end of the irradiator is illustrated as a unitary structure and the proximal end is illustrated as comprising multiple proximal end members. The irradiation device includes two or more optical fibers that transmit energy toward the distal end and at least one optical fiber that transmits energy from the distal end to the proximal end of the device.

JP 2009-172051 A Japanese Patent Publication No. 2007-537776

Gispert, J.R. (2008). Coordination Chemistry. Wiley-VCH. p. Albani, J.R. (2004). Structure and Dynamics of Macromolecules: Absorption and Fluorescence Studies. Elsevier. p. 58. ISBN 0-444-51449-X Lakowicz, J.R. 1983. Principles of Fluorescence Spectroscopy, Plenum Press, New York. ISBN 0-387-31278-1 Guilbault, G.G. 1990. Practical Fluorescence, Second Edition, Marcel Dekker, Inc., New York. ISBN 0-8247-8350-6 Kitai, A. (2008). Luminescent Materials and Applications. John Wiley and Sons. p. Rost, F.W.D. (1992). Fluorescence Microscopy. Cambridge University Press. p. Kazuo Amano, Toru Asai, Yoshikazu Yamada, "Influence of Oxygen Deficiencies in Oxide Ceramics on Development of Highly Efficient Infrared Radiator", Aichi Institute of Industrial Technology Research Report, No. 1, pp. 95-101, December 2002 Miki Kanna,Sumpun Wongnawa,"Mixed amorphous and nanocrystalline TiO2 powders prepared by sol-gel method: Characterization and photocatalytic study" Materials Chemistry and Physics, volume 110, Issue 1, Pages 166-175, 15 July,2008

However, the dental treatment apparatus described in Patent Document 1 can only perform treatment corresponding to wavelengths having a center wavelength in a predetermined wavelength range, and the application of the treatment is limited.

Also, if an Er:YAG laser with a wavelength range of 2940 nm or a high-output semiconductor laser is used, the configuration of the device will increase in size. In contrast, treatment with a laser irradiation device was difficult. Moreover, the Er:YAG laser necessarily requires water due to its laser properties.

SUMMARY OF THE INVENTION Therefore, a main object of the present invention is to provide a wavelength conversion member that can easily convert a wavelength into a wavelength different from the wavelength of a laser beam output from a laser irradiation device even if it is a low-output laser irradiation device and amplify the wavelength. to provide.

A wavelength conversion member according to the present invention includes a laser light guide including a core portion for guiding laser light and a clad disposed around the core portion. The portion is doped with a mixture of liquid silica and a wavelength-converting substance so that the wavelength-converting substance is diffusely arranged, and part of the diffusely arranged wavelength-converting substance is in the liquid silica. When laser light from the other end side of the laser light guide enters the Raman wavelength conversion part through the core part, the Raman wavelength conversion part converts the wavelength The wavelength conversion member is characterized in that laser light is output as Raman scattering light that has been wavelength-converted to a wavelength different from the wavelength of laser light due to the Raman effect based on the conversion substance.
Further, a wavelength conversion member according to the present invention includes a laser light guide including a core portion for guiding laser light and a clad disposed around the core portion, a base material containing Si, and a base material a Raman wavelength converting portion composed of a wavelength converting substance doped into the laser light guide, the Raman wavelength converting portion being fused to the core portion at one end of the laser light guide, and the wavelength converting substance being diffused; A portion of the wavelength conversion material that is diffused and arranged is bonded to Si, and laser light from the other end side of the laser light guide passes through the core portion and enters the Raman wavelength conversion portion. When incident, a Raman effect based on the wavelength conversion substance is generated in the Raman wavelength conversion part, and laser light is output as Raman scattered light whose wavelength is converted to a wavelength different from the wavelength of the laser light. , is a wavelength conversion member.
Further, this wavelength conversion member includes a base material containing Si for guiding laser light and a wavelength conversion material doped into the base material, and the wavelength conversion material for generating a Raman effect in the base material. a Raman wavelength conversion part in which a wavelength conversion material is diffused and arranged by being doped in advance, and a part of the wavelength conversion substance diffused and arranged is bonded to Si; and a Raman wavelength conversion. and a cladding arranged around the portion, wherein when laser light enters the Raman wavelength converting portion from the other end side of the Raman wavelength converting portion, a Raman effect based on the wavelength converting substance occurs in the Raman wavelength converting portion. The wavelength conversion member is characterized in that it outputs laser light by Raman scattered light that has been wavelength-converted to a wavelength different from the wavelength of the laser light.
In this wavelength conversion member, the wavelength conversion substance preferably has an average particle size of 1 nm or more and 500 nm or less.
Moreover, it is preferable that the doping rate of the wavelength conversion material in this wavelength conversion member is 0.1% or more and 30% or less.
Furthermore, it is preferable that the wavelength of the laser light output by the Raman scattered light from this wavelength conversion member is 3000 nm or more.
Moreover, it is preferable that the material of the core portion of this wavelength conversion member is quartz.
Further, in this wavelength conversion member, the doped wavelength conversion material is preferably titanium oxide.
Furthermore, in this wavelength conversion member, the titanium oxide is preferably titanium oxide (TiO ₂ ).
Moreover, it is preferable that the titanium oxide of this wavelength conversion member is an anatase type.

The wavelength conversion device according to the present invention comprises a wavelength conversion member according to the present invention, and a laser having a wavelength converted to a wavelength different from the wavelength of the laser light generated by the Raman effect, which is arranged on the other end side of the laser light guide. and a half mirror portion having a function of reflecting light.

A laser irradiation device according to the present invention comprises a wavelength conversion device according to the present invention, a semiconductor laser for emitting laser light to a wavelength conversion member, and a device for controlling the temperature in a Raman wavelength conversion section by controlling the semiconductor laser. and a controller.

A method for manufacturing a wavelength conversion member according to the present invention includes the steps of preparing a mixture of liquid silica and a wavelength conversion material, and introducing a laser beam into the prepared mixture with a core portion for guiding a laser beam exposed. a step of applying the mixture to the exposed core portion of the laser light guide by immersing one end side of the body; A step of melting the mixture applied to the exposed surface of the core portion and diffusing the wavelength conversion substance in the mixture, and further irradiating the portion coated with the mixture with a laser beam to melt the wavelength conversion substance A method of manufacturing a wavelength conversion member, comprising: heating a portion coated with the mixture at a temperature lower than the temperature to fix the wavelength conversion substance in a diffused state to form a Raman wavelength conversion portion. .
Further, a method for manufacturing a wavelength conversion member according to the present invention includes a step of preparing a Raman wavelength conversion part in which a wavelength conversion substance is pre-doped in a base material containing Si; a step of bonding to one end side of a laser light guide including a core portion for performing a laser beam irradiation to melt the joint portion between the Raman wavelength conversion portion and the laser light guide to form a Raman wavelength conversion portion; and a step of diffusing a wavelength converting substance contained in a into a core portion of a laser light guide.
Further, the method for manufacturing a wavelength conversion member according to the present invention includes the steps of preparing a string-shaped base material made of a material having a high refractive index, such as quartz containing Si (SiO ₂ ); A method of manufacturing a wavelength converting member, comprising the steps of doping a wavelength converting material to form a Raman wavelength converting portion, and forming a clad disposed around the formed Raman wavelength converting portion.

According to the present invention, it is possible to provide a wavelength conversion member that can easily convert a wavelength into a wavelength different from the wavelength of a laser beam output from a laser irradiation device even if it is a low-output laser irradiation device, and amplify the wavelength. can. Also, a wavelength conversion device having this wavelength conversion member can be provided. Also, a laser irradiation device equipped with this wavelength conversion device can be provided. Furthermore, it is possible to provide a method for manufacturing a wavelength conversion member, which can manufacture the above wavelength conversion member.

The above object, other objects, features and advantages of the present invention will become more apparent from the following description of the mode for carrying out the invention, which is made with reference to the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS It is an external view of the laser irradiation apparatus concerning the 1st Embodiment of this invention. BRIEF DESCRIPTION OF THE DRAWINGS It is an illustration figure which showed the structure of the laser irradiation apparatus concerning the 1st Embodiment of this invention. 1 is an enlarged cross-sectional view of a wavelength conversion member according to a first embodiment of the invention; FIG. It is an enlarged sectional view of the wavelength conversion member concerning the modification of the 1st Embodiment of this invention. It is a flow chart for explaining a manufacturing method of a wavelength conversion member concerning a 1st embodiment of this invention. It is a flow figure for explaining a manufacturing method of a wavelength conversion member concerning a modification of a 1st embodiment of this invention. It is an illustration figure which showed the structure of the laser irradiation apparatus concerning the 2nd Embodiment of this invention. It is a flow chart for explaining a manufacturing method of a wavelength conversion member concerning a 2nd embodiment of this invention.

A. First Embodiment A laser irradiation device 10 having a wavelength conversion device 20 using a wavelength conversion member 30 according to a first embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is an external view of a laser irradiation device according to a first embodiment of the invention. FIG. 2 is an illustrative view showing the configuration of the laser irradiation device according to the first embodiment of the invention. FIG. 3 is an enlarged cross-sectional view of the wavelength conversion member according to the first embodiment of the invention.

A laser irradiation device 10 according to the first embodiment includes a wavelength conversion device 20 and a main body 50 as shown in FIG. 1 or 2 . The wavelength conversion device 20 includes a wavelength conversion member 30 and a half mirror section 40 as shown in FIG. 1 or 2 .

1. Wavelength Conversion Member The wavelength conversion member 30 according to the first embodiment includes a laser light guide 32 . The laser light guide 32 includes a core portion 36 for guiding laser light, a clad 37 arranged around the core portion 36 , and a coating layer 38 arranged around the clad 37 . The core portion 36, clad 37, and coating layer 38 are arranged concentrically.

The core portion 36 is made of a material having a high refractive index, such as quartz containing Si (SiO ₂ ). The clad 37 is made of a material such as quartz or resin, and has a refractive index lower than that of the core 36 by about 0.2 to 1%. The coating layer 38 is made of a resin material such as fluororesin and protects the core portion 36 and the clad 37 . In this embodiment, the core portion 36 is made of quartz (SiO ₂ ), the clad 37 is made of a hard resin material, and the coating layer 38 is made of a fluorine-containing resin material. Note that the core portion 36 according to the present embodiment may be formed hollow.

Further, as shown in FIG. 3, the core portion 36 is exposed at one end of the laser light guide 32, and the Raman wavelength conversion portion 34 is arranged so as to cover the core portion 36 at that portion. A mixture of liquid silica and a wavelength conversion substance is doped in the Raman wavelength conversion section 34 to disperse the wavelength conversion substance. That is, the Raman wavelength conversion part 32 is made of silica-based glass, and the wavelength conversion substance is arranged therein in a diffused manner. A part of the diffusely arranged wavelength converting material is also arranged as a structure of Si crystals in the liquid silica. The Raman wavelength converting portion 32 has a substantially hemispherical tip portion. The Raman wavelength conversion section 32 may have a lens-shaped tip portion.

When laser light enters the Raman wavelength conversion section 34 from the other end side of the laser light guide 32 through the core section 36, the Raman effect based on the wavelength conversion substance occurs in the Raman wavelength conversion section 34, and the laser light Laser light (Stokes light) is output as Raman scattering light whose wavelength has been converted to a wavelength different from the wavelength of . In addition, in the range caused by Rayleigh scattering in the ultraviolet region with a shorter frequency, harmful wavelengths may be attenuated and removed by mixing a blue light-absorbing material on the side of the liquid silica used in the mixture. Thereby, the safety of the output laser light can be ensured.
Here, for example, in order to expand the wavelength to the near-infrared region, it is theoretically known that the Stoke phenomenon of electrons should be expanded to the excitation level by affecting other atoms. In other words, the Stoke phenomenon is a phenomenon that occurs due to the interaction of electrons between two atoms. can be reflected in the magnitude of the Stoke phenomenon from the photon resonance phenomenon (for more detailed theoretical content, see Non-Patent Documents 1 to 6).
Further, whether or not the wavelength conversion substance is combined as a structure of the Si crystal contained in the liquid silica to expand the Stoke phenomenon to the excitation Stoke region affects the expansion of the wavelength region.

As the wavelength conversion material, for example, titanium oxide or rare earth laser media such as Er, Yb, Nd, Bi and Pr can be used. Depending on the wavelength conversion substance used, it is possible to select the output as laser light (Stokes light) by Raman scattered light converted into a wavelength peculiar to each substance caused by the Raman effect. The particle size of the wavelength-changing substance is set to nano-level in order to secure a surface area for efficiently generating the Raman effect, and the smaller the particle size, the better. In particular, when this wavelength conversion member 30 is used for dental treatment, the wavelength conversion substance is selected in consideration of the absorption wavelength of water.

Titanium oxide (TiO ₂ ) is preferable as the titanium oxide. It is preferable that the average particle diameter of titanium oxide as a wavelength conversion substance is 1 nm or more and 500 nm or less, which is defined as nano-level. Thereby, it is possible to secure a surface area for efficiently generating the Raman effect. The doping rate of titanium oxide as a wavelength conversion substance is preferably 0.1% or more and 30% or less. Thereby, the Raman effect can be caused more efficiently. For example, when titanium oxide (TiO ₂ ) is used as the wavelength conversion material, the wavelength of laser light output by Raman scattered light can be 3000 nm or more. Non-patent document 7 and non-patent document 8 disclose the theory that titanium oxide causes the wavelength to shift to the infrared region.

As titanium oxide (TiO ₂ ), titanium oxide having a rutile-type or anatase-type crystal structure can be used. As the wavelength conversion substance, it is preferable to use titanium oxide having an anatase-type crystal structure. When titanium oxide is an anatase type, it has a significant possibility as a surrounding atom that causes a stalk phenomenon when the accompanying atomic structure is modified to a rutile type at 900° C. or higher. Further, there are two types of anatase type, Homo and Rumo, and the Rumo type is preferable for efficiently causing the Stoke phenomenon.

In the laser light guide 32 of the present embodiment, the diameter of the core portion 36 is about 200 μm to 320 μm, the outer diameter of the clad 37 is about 250 μm to 370 μm, and the portion of the Raman wavelength conversion portion 34 disposed in the laser light guide 32 is about 220 μm to 340 μm, and the length along the axial direction of the laser light guide 32 is about 200 μm.

In the wavelength conversion member 30 shown in FIG. 3, the core portion 36 is exposed at one end side of the laser light guide 32, and the Raman wavelength conversion portion 34 is arranged in that portion so as to cover the core portion 36. A mixture of liquid silica and a wavelength conversion substance is doped in the Raman wavelength conversion section 34 to disperse the wavelength conversion substance. That is, the Raman wavelength conversion part 32 is made of silica-based glass, and the wavelength conversion substance is arranged therein in a diffused manner. A part of the diffusely arranged wavelength converting material is also arranged as a structure of Si crystals in the liquid silica. This makes it possible to easily provide a wavelength conversion member capable of converting a wavelength into a wavelength different from the wavelength of a laser beam output from the laser irradiation device and amplifying it, even with a low-output laser irradiation device.

Further, in the wavelength conversion member 30 shown in FIG. 3, when the average particle diameter of titanium oxide as a wavelength conversion substance is 1 nm or more and 500 nm or less on the nano level, it is necessary to efficiently generate the Raman effect. Surface area can be secured.

Furthermore, the wavelength conversion member 30 shown in FIG. 3 can efficiently generate the Raman effect when the doping rate of titanium oxide as the wavelength conversion material is 0.1% or more and 30% or less. .

Further, in the wavelength conversion member 30 shown in FIG. 3, when the wavelength of the laser light output by the Raman scattered light is 3000 nm or more, the wavelength is the absorption wavelength of water, so that it can be suitably used for dental treatment. can.

Furthermore, in the wavelength conversion member 30 shown in FIG. 3, if the core portion 36 is made of a material having a high refractive index, such as quartz containing Si (SiO ₂ ), the wavelength conversion member 30 can be efficiently laser light can be guided against.

The wavelength conversion member 30 shown in FIG. 3 uses titanium oxide as the wavelength conversion material, and furthermore, titanium oxide (TiO ₂ ). Laser light (Stokes light) can be obtained.
Furthermore, when this titanium oxide is an anatase type, the accompanying atomic structure is significant as a surrounding atom that causes a stalk phenomenon when it is modified to a rutile type at 900 ° C. or higher, so it can be used more preferably. can.

Next, the wavelength conversion member 130 according to the modification of the first embodiment will be described.
FIG. 4 is an enlarged cross-sectional view of a wavelength conversion member according to a modification of the first embodiment of the invention. In the wavelength conversion member 130 shown in FIG. 4, the same parts as those of the wavelength conversion member 30 shown in FIG.

A wavelength conversion member 130 according to the modification includes a laser light guide 132 and a Raman wavelength conversion section 134 . The laser light guide 132 includes a core portion 36 for guiding laser light and a clad arranged around the core portion 36 .

The Raman wavelength conversion part 134 is fused and joined to the core part 36 exposed at one end of the laser light guide 132 . The Raman wavelength converting portion 134 includes a substrate 134a and a wavelength converting material for doping the substrate 134a. The base material 134a contains Si. Preferably, the base material 134a is made of quartz. By doping the substrate 134a with the wavelength converting substance, the wavelength converting substance is diffusely arranged inside the substrate 134a, and part of the diffusely arranged wavelength converting substance is transferred to the substrate 134a. Arranged in combination with the contained Si.
Here, as the wavelength conversion material used in the Raman wavelength conversion section 134, the same material as that used in the Raman wavelength conversion section 34 can be used.

When laser light enters the Raman wavelength conversion section 134 from the other end side of the laser light guide 132 through the core section 36, the Raman effect based on the wavelength conversion substance occurs in the Raman wavelength conversion section 134, causing the laser light to Laser light (Stokes light) is output as Raman scattering light whose wavelength has been converted to a wavelength different from the wavelength of .

The wavelength conversion member 130 shown in FIG. 4 has the same effects as the wavelength conversion member 30 shown in FIG. 3, and also has the following effects.
That is, since the Raman wavelength conversion part 134 is manufactured separately and then joined to the laser light guide 132, the wavelength conversion member 130 can be easily obtained by mass-producing the Raman wavelength conversion part 134. Therefore, the structure is suitable for mass production of the wavelength conversion member 130 .

2. Wavelength Conversion Device The wavelength conversion device 20 includes a wavelength conversion member 30 and a half mirror section 40, as shown in FIGS.

The half mirror portion 40 according to the first embodiment is arranged on the other end side of the wavelength conversion member 30, and reflects laser light having a wavelength converted to a wavelength different from the wavelength of the laser light generated by the Raman effect. have a function. That is, for example, when the wavelength conversion material is titanium oxide and the wavelength generated by the Raman effect is assumed to be 3000 nm, the half mirror section 40 is arranged to reflect the wavelength of 3000 nm.

Note that the wavelength conversion device 20 can also be configured by the wavelength conversion member 130 and the half mirror section 40 .

The wavelength conversion device 20 shown in FIG. 1 or 2 includes a half mirror section 40 having a function of reflecting the laser light having a wavelength converted to a wavelength different from that of the laser light generated by the Raman effect. Since the Raman effect occurs in the member 30, it is possible to more efficiently amplify the laser light (Stokes light) by the Raman scattering light whose wavelength is converted to a wavelength different from that of the laser light.

3. Laser Irradiation Device A laser irradiation device 10 according to the first embodiment includes a wavelength conversion device 20 and a main body 50 .

As shown in FIG. 2, the main body 50 has a laser generator 52 that emits a laser beam to the wavelength conversion member 30, and the Raman wavelength converter 34 of the wavelength conversion members 30 and 130 by controlling the laser generator 52. and a control unit 54 for controlling the temperature in. In addition, if necessary, the main unit 50 of the laser irradiation device 10 includes an operation unit 56 for operating the laser irradiation device 10 via the control unit 54, and a control unit 56 for displaying the control state of the laser irradiation device 10. A display unit 58 is provided. As the wavelength conversion member 30, the wavelength conversion member 130 can be used.

The laser light generator 52 emits laser light under the control of the controller 54 and outputs the laser light to the wavelength conversion device 20 .

A semiconductor laser, a solid-state laser device, a fiber laser device, or the like can be used as the laser light generator 52 . The laser light generator 52 according to this embodiment is composed of a semiconductor laser. This semiconductor laser outputs laser light of a predetermined wavelength in accordance with current input from a power supply circuit (not shown). In addition, the laser light generator 52 has a CW mode that continuously emits laser light, and a repeat mode that intermittently repeats laser oscillation (on-time) and oscillation stop (off-time) at a certain set time and at a certain output intensity. , etc., may be provided with various laser output modes. The repeat mode can be realized, for example, by intermittently inputting a driving current of a predetermined current value to the semiconductor laser.

In this embodiment, the laser light generator 52 is capable of outputting at a wavelength of 980 nm, an output of about 4 to 30 W, CW mode, and repeat mode. The laser light generator 52 can output a laser beam in a repeat mode with an on-time of 1 ms to 1000 ms and an off-time of 1 ms to 1000 ms.

The control unit 54 comprehensively controls each component of the laser irradiation device 10 . Further, the control unit 54 implements the functions according to the present embodiment in the laser irradiation device 10 by executing a program stored in a storage unit (not shown).

Further, the control unit 54 performs processing for controlling to perform processing for emitting laser light from the laser light generation unit 52 .

The operation unit 56 includes operation buttons and the like, and outputs signals to the control unit 54 according to user's operations. The control unit 54 performs processing for controlling the magnitude of the output of the laser light emitted from the laser light generation unit 52, the ON time, the OFF time, etc., according to the operation of the operation unit 56. FIG.

The display unit 58 performs display according to the operation according to the present invention under the control of the control unit 54 .
A storage unit (not shown) has a semiconductor storage device such as a RAM or ROM, a magnetic disk storage device such as a hard disk drive, or the like, and stores programs, data, and the like for realizing functions according to the present invention. The storage section is also used as a work area for program execution by the control section 54 .

Next, operation of the laser irradiation device 10 according to the embodiment of the present invention will be described.

When the operation unit 56 is operated, the control unit 54 performs processing for emitting laser light from the laser light generation unit 52 . When the laser light is incident on the other end side of the wavelength conversion members 30 and 130, the laser light propagates through the core portion 36 of the laser light guide 32 and diffuses into the Raman wavelength conversion portion 34 of the wavelength conversion members 30 and 130. A Raman effect is generated by acting on a substance, and laser light (Stokes light) is output as Raman scattering light whose wavelength is converted to a wavelength different from that of the incident laser light.

At this time, the laser light is emitted in the form of pulses, and the temperature in the Raman wavelength conversion section 34 becomes high, but the temperature is controlled by the control section 54 so that the wavelength conversion members 30 and 130 do not melt.

Since the laser irradiation device 10 shown in FIGS. 1 and 2 includes the wavelength conversion device 20 according to the present invention, even with a low-power laser irradiation device, the laser light output from the laser generation unit 52 can be easily obtained. It is possible to provide a laser irradiation device 10 capable of wavelength conversion and amplification to a wavelength different from the wavelength of .

4. Method for Manufacturing Wavelength Conversion Member Next, a method for manufacturing the wavelength conversion member 30 according to the first embodiment will be described.
FIG. 5 is a flowchart of a method for manufacturing a wavelength conversion member according to the first embodiment;

First, in step S100, the laser light guide 32 is prepared. The laser light guide 32 includes a core portion 36 for guiding laser light, a clad 37 arranged around the core portion 36 , and a coating layer 38 arranged around the clad 37 .

Next, the cladding 37 and the coating layer 38 of about several centimeters from the tip of the laser light guide 32 are removed with a jig or the like to expose the core portion 36 .

Subsequently, in step S102, a mixture of liquid glass and wavelength converting material is prepared, and the exposed core portion 36 is doped with the mixture.

The mixing ratio of the liquid glass and the wavelength conversion substance is, for example, 50% by mass, respectively. As the wavelength conversion material, for example, titanium oxide or rare earth laser media such as Er, Yb, Nd, Bi and Pr can be used. That is, the wavelength-converting substance can select output as laser light (Stokes light) by Raman scattered light converted to a wavelength peculiar to the substance caused by the Raman effect. The particle size of the wavelength-changing substance is set to nano-level in order to secure a surface area for efficiently generating the Raman effect, and the smaller the particle size, the better. In particular, when this wavelength conversion member is used for dental treatment, the wavelength conversion substance is selected in consideration of the absorption wavelength of water.
Titanium oxide (TiO ₂ ) is preferable as the titanium oxide. The average particle diameter of titanium oxide is preferably 1 nm or more and 500 nm or less on the nano level. Thereby, it is possible to secure a surface area for efficiently generating the Raman effect.

Then, in step S104, the one end side of the laser light guide 32 with the exposed core portion 36 for guiding the laser light is immersed in the prepared mixture. A mixture is applied to the core portion 36 .

Next, in step S106, the portion coated with the mixture is irradiated with a laser beam to melt the mixture coated on the surface of the core portion 36 exposed at one end of the laser light guide 32. A wavelength converting material is diffused within. At this time, the output emitted from the laser generator 52 is adjusted according to the diameter of the core 36 and the quality of the liquid silica (presence or absence of impurities, etc.). For example, if a semiconductor laser is used as the laser generator 52, and the laser beam has a wavelength of 980 nm and an output of 25 W, the diameter of the core portion 36 is 200 μm, and the irradiation time is 250 ms. For the diameter of the core portion 36 of 400 μm, the irradiation is performed for 600 ms to 950 ms.

For example, the limiter is set by the melting temperature of the wavelength converting material. When the wavelength conversion material is titanium oxide, the temperature is limited to 1700° C., which is before the melting temperature. If the laser light guide 32 is quartz fiber or glass fiber, it melts at around 1440°C.
The larger the diameter of the core portion 36, the longer it takes to melt, so the length is adjusted longer. Also, the adjustment of the time changes depending on the doping rate of the wavelength conversion substance. The doping rate of titanium oxide as a wavelength conversion substance is preferably 0.1% or more and 30% or less.

Therefore, the temperature required for the diffusion of the wavelength conversion substance in this step is substantially lower than the melting temperature of the wavelength conversion substance. By being formed in a similar state, the wavelength converting substance is diffused in the portion where the mixture is applied. And thereby, it is affected by the diffusion of the excitation photon and amplified. This amplification is a phenomenon in which the total amount of photons exceeds the amount of incident laser photons. In addition, the output laser light (Stokes light) can control the directionality and diffusion of the laser output by making the processed form of the tip portion from which the laser light is output into a lens shape or a substantially hemispherical shape. can.

On the other hand, if the melting time is too long, rutile crystals will accumulate in the wavelength converting material such as titanium oxide, lowering the conditions for causing the Stoke phenomenon.
When titanium oxide (TiO ₂ ) is an anatase type, it has a significant possibility as a surrounding atom that causes a stalk phenomenon when the accompanying atomic structure is modified to a rutile type at 900° C. or higher. Although there are two types of anatase type, Homo and Rumo, the Rumo type is preferable for efficiently causing the Stoke phenomenon.

Then, in step S108, the portion coated with the mixture is further irradiated with a laser beam to heat the portion coated with the mixture at a temperature lower than the melting temperature of the wavelength conversion substance, thereby diffusing the wavelength conversion substance. The Raman wavelength conversion section 34 is formed by fixing the state. Also at this time, the output emitted from the laser generator 52 is adjusted according to the diameter of the core portion 36 and the quality of the liquid silica (presence or absence of impurities, etc.). Then, for example, when a semiconductor laser is used as the laser generator 52 and the laser beam has a wavelength of 980 nm and an output of 25 W, the irradiation is performed for 1 s to 3 s.

Thus, in step S110, the wavelength conversion member 30 shown in FIG. 3 is manufactured.

According to the method for manufacturing a wavelength conversion member according to the first embodiment, the step of preparing a mixture of liquid silica and a wavelength conversion substance, and the core portion 36 for guiding laser light to the prepared mixture a step of applying the mixture to the exposed core portion 36 of the laser light guide 32 by immersing one end side of the laser light guide 32 exposed to the laser light guide 32; a step of melting the mixture applied to the surface of the core portion 36 exposed at one end of the laser light guide 32 and then diffusing the wavelength conversion substance in the mixture; A step of irradiating a laser beam and heating the portion coated with the mixture to a temperature lower than the melting temperature of the wavelength conversion substance, thereby fixing the wavelength conversion substance in a diffused state to form the Raman wavelength conversion portion 34. and , it is possible to provide a method for manufacturing the wavelength conversion member 30 shown in FIG.

Next, a method for manufacturing the wavelength conversion member 130 according to the modified example of the first embodiment will be described.
FIG. 6 is a flowchart of a method for manufacturing the wavelength conversion member 130 according to the modification of the first embodiment.

First, in step S200, a laser light guide 132 having a predetermined length is prepared. For example, the laser light guide 132 is prepared with a length of about 10 to 20 cm, or about 1 to 2 m. The laser light guide 132 includes a core portion 36 for guiding laser light, a clad 37 arranged around the core portion 36 , and a coating layer 38 arranged around the clad 37 . At one end of the laser light guide 132, the clad 37 and the coating layer 38 are removed from the tip by a jig or the like to expose the core portion 36. As shown in FIG.

Then, in step S202, the Raman wavelength conversion section 134 pre-doped with a wavelength conversion material is prepared. The Raman wavelength conversion part 134 prepared here is prepared as a small piece having a diameter of 200 μm to 400 μm and a length of about 1 to 30 mm, or about 10 to 20 cm. Small pieces of such a Raman wavelength converting portion 134 can be mass-produced by doping the substrate 134a with a wavelength converting material by a known method. Here, for example, a VAD (Vapor Phase Axial Deposition) method or an MCVD (Modified Chemical Vapor Deposition) method can be used as a method of doping the base material 134a with the wavelength conversion substance.

Next, in step S204, the prepared Raman wavelength converting portion 134 is joined to one end side of the laser light guide 132 including the core portion 36 for guiding the laser light. This bonding is performed, for example, by heating the bonding surfaces and then welding them.

Subsequently, in step S206, a laser beam is incident on the Raman wavelength conversion section 134 via the core section 36 from the other end side of the laser light guide 132 to which the Raman wavelength conversion section 134 is welded, and the laser light guide 132 and the Raman wavelength converting portion 134 are melted. Then, the wavelength conversion substance contained in the Raman wavelength conversion section 134 is diffused into the core portion 36 of the laser light guide 132, so that the laser light guide 132 and the Raman wavelength conversion section 134 are more strongly bonded. .

Thus, in step S208, the wavelength conversion member 130 shown in FIG. 4 is manufactured.

According to the method for manufacturing a wavelength conversion member according to the modification of the first embodiment, the step of preparing the Raman wavelength conversion part 134 in which the wavelength conversion substance is pre-doped in the base material 134a containing Si; a step of bonding the conversion portion 134 to one end side of the laser light guide 32 including the core portion 36 for guiding the laser light; 32 and diffusing the wavelength conversion substance contained in the Raman wavelength conversion part 134 into the core part 36 of the laser light guide 32. Therefore, the wavelength conversion member 130 shown in FIG. A manufacturing method can be provided.

B. Second Embodiment Subsequently, a laser irradiation device 510 having a wavelength conversion device 520 using a wavelength conversion member according to a second embodiment of the present invention will be described with reference to the drawings.

FIG. 7 is an illustrative view showing the configuration of a laser irradiation device according to a second embodiment of the invention.

A laser irradiation device 510 according to the second embodiment includes a wavelength conversion device 520 and a main body 550, as shown in FIG. The wavelength changing device 520 includes a wavelength converting member 530 and a half mirror section 540, as shown in FIG. It also includes a handpiece 560 held by the operator to irradiate the treatment site with the laser light guided by the wavelength conversion member 530 .

1. Wavelength Conversion Member A wavelength conversion member 530 according to the second embodiment includes a Raman wavelength conversion portion 534 pre-doped with a wavelength conversion material for producing a Raman effect, and a Raman wavelength conversion portion 534 disposed around the Raman wavelength conversion portion 534. It comprises a clad 537 and a covering layer 538 arranged around the clad 537 . The Raman wavelength conversion section 534, the clad 537, and the coating layer 538 are arranged concentrically.

The Raman wavelength conversion unit 534 includes a string-like base material 534a made of a material having a high refractive index, such as quartz containing Si (SiO ₂ ), and a wavelength for generating the Raman effect, which is doped into the base material 534a. and conversion substances. Therefore, the wavelength conversion substance is diffusely arranged on the base material 534a of the Raman wavelength conversion part 534, and part of the diffused wavelength conversion substance is arranged in combination with Si. The doping rate of the wavelength conversion substance with respect to the base material 534a is 0.1% or more and 3% or less. The clad 537 is made of a material such as quartz or resin, and has a refractive index lower than that of the base material 534a by about 0.2 to 1%. The coating layer 538 is made of a resin material such as fluorocarbon resin, and protects the Raman wavelength conversion section 534 and the clad 537 . In this embodiment, the Raman wavelength converting portion 534 is made of quartz (SiO ₂ ) doped with a wavelength converting material, the clad 537 is made of a hard resin material, and the coating layer 538 is made of It is made of a resin material containing fluorine.

Since the main body 550 and the handpiece 560 of the laser irradiation device 510 are arranged remotely, the wavelength conversion member 534 used in the laser irradiation device 510 is relatively long. The length of the wavelength conversion member 534 is, for example, a length that does not interfere with treatment by the handpiece 560, and is, for example, 1 m or longer.

When the laser light enters from the other end side of the Raman wavelength conversion section 534, the Raman effect based on the wavelength conversion substance occurs in the Raman wavelength conversion section 534, and the Raman wavelength is converted to a wavelength different from the wavelength of the laser light. Laser light (Stokes light) is output by the scattered light.

As the wavelength conversion material, for example, titanium oxide or rare earth laser media such as Er, Yb, Nd, Bi and Pr can be used. That is, the wavelength conversion substance can select an output as laser light (Stokes light) by Raman scattered light converted into a wavelength specific to each substance caused by the Raman effect. The particle size of the wavelength-changing substance is set to nano-level in order to secure a surface area for efficiently generating the Raman effect, and the smaller the particle size, the better. In particular, when this wavelength conversion member is used for dental treatment, the wavelength conversion substance is selected in consideration of the absorption wavelength of water.

Titanium oxide (TiO ₂ ) is preferable as the titanium oxide. It is preferable that the average particle diameter of titanium oxide as a wavelength conversion substance is 1 nm or more and 500 nm or less, which is defined as nano-level. Thereby, it is possible to secure a surface area for efficiently generating the Raman effect. The doping rate of titanium oxide as the wavelength conversion substance is preferably 0.1% or more and 3% or less. Thereby, the Raman effect can be caused more efficiently. When titanium oxide (TiO ₂ ) is used as the wavelength conversion material, as shown in FIG. 4, the wavelength of laser light output by Raman scattered light is 3000 nm or more.

As titanium oxide (TiO ₂ ), titanium oxide having a rutile-type or anatase-type crystal structure can be used. As the wavelength conversion substance, it is preferable to use titanium oxide having an anatase-type crystal structure. When titanium oxide is an anatase type, it has a significant possibility as a surrounding atom that causes a stalk phenomenon when the accompanying atomic structure is modified to a rutile type at 900° C. or higher. Further, there are two types of anatase type, Homo and Rumo, and the Rumo type is preferable for efficiently causing the Stoke phenomenon.

In the wavelength converting member 530 shown in FIG. 7, the Raman wavelength converting portion 534 includes a string-like base material 534a formed of a material having a high refractive index such as quartz containing Si (SiO ₂ ), and a doped base material 534a. and a wavelength converting material for producing the Raman effect added. Therefore, the wavelength conversion substance is diffusely arranged on the base material 534a of the Raman wavelength conversion part 534, and part of the diffused wavelength conversion substance is arranged in combination with Si. Thus, even with a low-output laser irradiation device, it is possible to easily provide a wavelength conversion member capable of wavelength conversion and amplification to a wavelength different from the wavelength of the laser light output from the laser irradiation device. can.

The wavelength conversion member 530 shown in FIG. 7 has the same effects as the wavelength conversion member 30 shown in FIG.

2. Wavelength Conversion Device The wavelength conversion device 520 includes a wavelength conversion member 530 and a half mirror section 540, as shown in FIG.

The half mirror portion 540 according to the second embodiment, for example, the other end side of the wavelength conversion member 530, is arranged inside the main body portion 550, and has a wavelength different from the wavelength of the laser light generated by the Raman effect. It has a function of reflecting laser light with a wavelength that has been wavelength-converted. That is, for example, when the wavelength conversion material is titanium oxide, the wavelength generated by the Raman effect is 3000 nm, so the half mirror section 540 is arranged to reflect the wavelength of 3000 nm.

3. Laser Irradiation Device A laser irradiation device 510 according to the second embodiment includes a wavelength conversion device 520 and a main body 550 .

As shown in FIG. 7, the body portion 550 controls the laser generating portion 552 that emits a laser beam to the wavelength converting member 530, and controls the laser generating portion 552 to change the temperature of the Raman wavelength converting portion 534 of the wavelength converting member 530. and a control unit 554 for controlling the In addition, if necessary, the main unit 550 of the laser irradiation device 510 includes an operation unit 556 for operating the laser irradiation device 510 via a control unit 554 and a control unit 556 for displaying the control state of the laser irradiation device 510. A display unit 558 is provided.

The laser light generating section 552 emits laser light under the control of the control section 554 and outputs the laser light to the wavelength conversion device 520 .

A semiconductor laser, a solid-state laser device, a fiber laser device, or the like can be used as the laser light generator 552 . The laser light generator 552 according to this embodiment is composed of a semiconductor laser. This semiconductor laser outputs laser light of a predetermined wavelength in accordance with current input from a power supply circuit (not shown). In addition, the laser light generator 552 has a CW mode that continuously emits laser light, and a repeat mode that intermittently repeats laser oscillation (on-time) and oscillation stop (off-time) at a certain set time and at a certain output intensity. , etc., may be provided with various laser output modes. The repeat mode can be realized, for example, by intermittently inputting a driving current of a predetermined current value to the semiconductor laser.

In this embodiment, the laser light generator 552 is capable of outputting at a wavelength of 980 nm, an output of about 4 to 30 W, CW mode, and repeat mode. The laser light generator 552 can output a laser beam in a repeat mode with an on time of 1 ms to 1000 ms and an off time of 1 ms to 1000 ms.

The control unit 554 comprehensively controls each component of the laser irradiation device 510 . Further, the control unit 554 implements the functions according to the present embodiment in the laser irradiation device 510 by executing a program stored in a storage unit (not shown).

Further, the control unit 554 performs processing for controlling to perform processing for emitting laser light from the laser light generation unit 552 .

The operation unit 556 includes foot switches, operation buttons, and the like, and outputs signals according to user's operations to the control unit 554 . The control unit 554 performs processing for controlling the magnitude of the output of the laser light emitted from the laser light generation unit 552, the on time, the off time, etc., according to the operation of the operation unit 556. FIG.

The display unit 558 performs display according to the operation according to the present invention under the control of the control unit 54 .
A storage unit (not shown) has a semiconductor storage device such as a RAM or ROM, a magnetic disk storage device such as a hard disk drive, or the like, and stores programs, data, and the like for realizing functions according to the present invention. The storage unit is also used as a work area for program execution by the control unit 554 .

4. Method for Manufacturing Wavelength Conversion Member Next, a method for manufacturing the wavelength conversion member according to the second embodiment will be described.
FIG. 8 is a flowchart for explaining the method of manufacturing the wavelength conversion member according to the second embodiment of the invention.

First, in step S300, a string-shaped base material 534a made of a material having a high refractive index such as quartz containing Si (SiO ₂ ) is prepared.

Next, in step S302, the base material 534a is doped with a wavelength converting material to form the string-like Raman wavelength converting portion 534. As shown in FIG. Here, a rod-in-tube method or the like can be used as a method of doping the wavelength conversion substance into the base material 534a.

Subsequently, in step S304, a clad 537 is formed around the formed Raman wavelength conversion section 534, and then in step S306, a coating layer 538 is formed around the clad 537. FIG.

Thus, in step S308, the wavelength conversion member 530 shown in FIG. 7 is manufactured.

According to the method for manufacturing a wavelength conversion member according to the present embodiment, the step of preparing the string-shaped base material 534a made of a material having a high refractive index such as quartz containing Si (SiO ₂ ); 7, the step of forming a Raman wavelength converting portion 534 by doping a wavelength converting substance to the Raman wavelength converting portion 534 and the step of forming a clad 537 arranged around the formed Raman wavelength converting portion 534. can provide a method for manufacturing the wavelength conversion member 530 shown in .

As described above, the embodiments of the present invention are disclosed in the above description, but the present invention is not limited thereto.
That is, without departing from the scope of the technical idea and purpose of the present invention, various modifications can be made to the above-described embodiments in terms of mechanism, shape, material, quantity, position, arrangement, etc. and they are included in the present invention.

INDUSTRIAL APPLICABILITY The wavelength conversion member, the wavelength conversion device and the laser irradiation device using the same, and the method for manufacturing the wavelength conversion member according to the present invention can be suitably used, for example, as a laser irradiation device used for dental treatment.

Reference Signs List 10, 510 laser irradiation device 20, 520 wavelength conversion device 30, 130, 530 wavelength conversion member 32, 132 laser light guide 34, 134, 534 Raman wavelength conversion section 134a, 534a substrate 36 core section 37, 537 clad 38, 538 cover layer 40, 540 half mirror portion 50, 550 body portion 52, 552 laser generating portion (semiconductor laser)
54, 554 control unit 56, 556 operation unit 58, 558 display unit

Claims (15)

a core portion for guiding laser light;
A laser light guide including a clad arranged around the core,
A mixture of liquid silica and a wavelength conversion substance is doped into the core portion on one end side of the laser light guide, so that the wavelength conversion substance is diffusely arranged, and the wavelength conversion substance is diffused. a Raman wavelength conversion part in which a part of the wavelength conversion material arranged in the liquid silica is bonded to Si in the liquid silica,
When the laser light enters the Raman wavelength conversion section from the other end side of the laser light guide through the core section, a Raman effect based on the wavelength conversion substance occurs in the Raman wavelength conversion section, A wavelength conversion member characterized by outputting laser light by Raman scattered light that has been wavelength-converted to a wavelength different from the wavelength of the laser light. a laser light guide including a core portion for guiding laser light and a clad disposed around the core portion;
a Raman wavelength conversion section composed of a substrate containing Si and a wavelength conversion substance doped into the substrate;
with
The Raman wavelength conversion part is fused to the core part on one end side of the laser light guide, and the wavelength conversion material is diffusely arranged, and the wavelength conversion material is diffusely arranged. A part of is arranged in combination with the Si,
When the laser light enters the Raman wavelength conversion section from the other end side of the laser light guide through the core section, a Raman effect based on the wavelength conversion substance occurs in the Raman wavelength conversion section, A wavelength conversion member characterized by outputting laser light by Raman scattered light that has been wavelength-converted to a wavelength different from the wavelength of the laser light. A base material containing Si for guiding laser light, and a wavelength conversion material doped into the base material, wherein the base material is previously doped with the wavelength conversion material for generating a Raman effect. a Raman wavelength converting portion in which the wavelength converting substance is arranged in a diffused manner, and a part of the wavelength converting substance arranged in a diffused manner is arranged to be bonded to the Si;
a clad arranged around the Raman wavelength conversion unit;
with
When the laser light is incident on the Raman wavelength conversion section from the other end side of the Raman wavelength conversion section, the Raman effect based on the wavelength conversion substance is generated in the Raman wavelength conversion section, thereby changing the wavelength of the laser light to the wavelength of the laser light. is a wavelength conversion member characterized by outputting laser light by Raman scattering light wavelength-converted to a different wavelength. 4. The wavelength conversion member according to claim 1, wherein said wavelength conversion substance has an average particle size of 1 nm or more and 500 nm or less. 5. The wavelength conversion member according to claim 1, wherein the doping rate of said wavelength conversion substance is 0.1% or more and 30% or less. 6. The wavelength conversion member according to any one of claims 1 to 5, wherein the laser light outputted by said Raman scattered light has a wavelength of 3000 nm or more. 7. The wavelength conversion member according to any one of claims 1 to 6, wherein the material of said core portion contains quartz. 8. The wavelength conversion member according to claim 1, wherein said doped wavelength conversion material is titanium oxide. 9. The wavelength conversion member according to claim 8, wherein the titanium oxide is titanium oxide ( _TiO2 ). 10. The wavelength conversion member according to claim 9, wherein said titanium oxide is an anatase type. a wavelength conversion member according to any one of claims 1 to 10;
a half-mirror section disposed on the other end side of the laser light guide and having a function of reflecting laser light having a wavelength converted to a wavelength different from the wavelength of the laser light generated by the Raman effect;
A wavelength conversion device comprising: a wavelength conversion device according to claim 11;
a semiconductor laser that emits laser light to the wavelength conversion member;
a control unit for controlling the temperature in the Raman wavelength conversion unit by controlling the semiconductor laser;
A laser irradiation device. providing a mixture of liquid silica and a wavelength converting material;
One end side of a laser light guide having an exposed core portion for guiding laser light is immersed in the prepared mixture, and the mixture is applied to the exposed core portion of the laser light guide. a step of applying;
The portion coated with the mixture is irradiated with a laser beam to melt the mixture coated on the surface of the core portion exposed at one end of the laser light guide, and then the wavelength diffusing the conversion substance;
Furthermore, by irradiating the portion coated with the mixture with a laser beam and heating the portion coated with the mixture at a temperature lower than the melting temperature of the wavelength conversion substance, the wavelength conversion substance is fixed in a diffused state. and forming a Raman wavelength conversion part;
A method for manufacturing a wavelength conversion member, comprising: providing a Raman wavelength converting portion in which a wavelength converting material is pre-doped in a substrate comprising Si;
a step of bonding the Raman wavelength conversion portion to one end side of a laser light guide including a core portion for guiding laser light;
Laser light is irradiated to melt the joint portion between the Raman wavelength conversion section and the laser light guide, and the wavelength conversion material contained in the Raman wavelength conversion section is transferred to the core portion of the laser light guide. a step of diffusing;
A method for manufacturing a wavelength conversion member, comprising: A step of preparing a string-like substrate made of a material having a high refractive index, such as quartz containing Si (SiO ₂ );
doping the substrate with a wavelength converting material to form a Raman wavelength converting portion;
a step of forming a clad arranged around the formed Raman wavelength conversion part;
A method for manufacturing a wavelength conversion member, comprising:

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