JP2022113433A - Semiconductor light emission device - Google Patents

Abstract

To provide a semiconductor light emission device capable of suppressing influence of heat by achieving high heat radiation property while maintaining strength.SOLUTION: A semiconductor light emission device includes a semiconductor light emission element, a sub-mount substrate, a first metal junction section, and a second metal junction section. The semiconductor light emission element includes: a semiconductor lamination section containing a first conductivity type semiconductor layer, a light emission layer, and a second conductivity type semiconductor layer; a first electrode unit which is brought into contact with one or more first contact regions in the first conductivity type semiconductor layer; and two or more second electrode units which are brought into contact, respectively in pairs, with two or more independent second contact regions in the second conductivity type semiconductor layer. The first contact region is arranged while sandwiched by the second contact regions. The first metal junction section electrically connects the first electrode unit and a third electrode unit of the sub-mount substrate. The second metal junction section electrically connects the second electrode unit and a fourth electrode unit of the sub-mount substrate. At least a part of the second metal junction section electrically connects the plurality of second electrode units and the fourth electrode unit.SELECTED DRAWING: Figure 5B

Description

The present invention relates to a semiconductor light emitting device.

2. Description of the Related Art Conventionally, semiconductor devices have been used in various electronic devices and applied to optical devices such as light-emitting devices and light-receiving devices, and various sensors. For example, when focusing on light-emitting devices (LEDs), development of deep-ultraviolet LEDs (hereinafter referred to as UVC-LEDs) with emission wavelengths of 280 nm or less is expected. A UVC-LED has a structure in which an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer such as gallium nitride (GaN) are laminated on a substrate such as sapphire or AlN. Since p-type AlGaN is difficult to realize, GaN is generally used instead of AlGaN as the p-type semiconductor layer.

However, when GaN is used as the p-type semiconductor layer, the bandgap of GaN is smaller than the emission wavelength energy, so the emitted light is absorbed by GaN. Therefore, when GaN is used as the p-type semiconductor layer, light is often extracted from the substrate side. Also, in a high-intensity light-emitting element, it is important to dissipate heat generated when current is applied. In particular, since the UVC-LED has a very low luminous efficiency of about 3%, there is a problem that the light-emitting element deteriorates quickly if heat dissipation is insufficient. To solve this problem, for example, Patent Document 1 proposes that a semiconductor layer that constitutes a light emitting element is peeled off from a substrate and adhered to a support substrate with high heat dissipation.

Japanese Patent Application Laid-Open No. 2007-81312

As the miniaturization of semiconductor elements progresses, the effect of distortion increases, and even if conventional technology is applied, it is difficult to achieve both maintaining strength and realizing high heat dissipation to suppress the effect of heat.

An object of the present invention is to provide a semiconductor light-emitting device capable of suppressing the influence of heat by achieving high heat dissipation while maintaining strength.

A first aspect of the present invention provides a semiconductor light emitting device comprising a semiconductor light emitting element, a submount substrate, a first metal junction, and a second metal junction,
The semiconductor light emitting device comprises: an element substrate; a semiconductor lamination portion disposed on one side of the element substrate and including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer; a first electrode portion disposed on one surface side and in contact with one or more first contact regions in the first conductivity type semiconductor layer; and a first electrode portion disposed on one surface side of the element substrate and the second conductivity type two or more second electrode portions in contact with each of the two or more independent second contact regions in the semiconductor layer,
In plan view, the first contact area is arranged so as to be sandwiched between the second contact areas,
The submount substrate has a third electrode portion and a fourth electrode portion,
the first metal joint electrically connects the first electrode portion and the third electrode portion;
the second metal joint electrically connects the second electrode portion and the fourth electrode portion;
At least some of the second metal junctions provide a semiconductor light emitting device electrically connecting the plurality of second electrode portions and the fourth electrode portions.

A second aspect of the present invention provides a semiconductor light emitting device comprising a semiconductor light emitting element, a submount substrate, a first metal junction, and a second metal junction,
The semiconductor light emitting device comprises: an element substrate; a semiconductor lamination portion disposed on one side of the element substrate and including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer; a first electrode portion disposed on one surface side and in contact with one or more first contact regions in the first conductivity type semiconductor layer; and a first electrode portion disposed on one surface side of the element substrate and the second conductivity type two or more second electrode portions contacting one or more second contact regions in the semiconductor layer;
The submount substrate has a third electrode portion and a fourth electrode portion,
the first metal joint electrically connects the first electrode portion and the third electrode portion;
the second metal joint electrically connects the second electrode portion and the fourth electrode portion;
a portion of the first conductivity type semiconductor layer, the light emitting layer, and the second conductivity type semiconductor layer have a mesa structure;
In a cross-sectional view, the side surface of the mesa structure, the surface of another part of the semiconductor layer of the first conductivity type, and the surface of the second metal joint facing the element substrate are covered with an insulator. A semiconductor light emitting device having

A third aspect of the present invention is a semiconductor light emitting device comprising a semiconductor light emitting element, a submount substrate, a first metal junction, and a second metal junction,
The semiconductor light emitting device comprises: an element substrate; a semiconductor lamination portion disposed on one surface side of the element substrate and including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer; a first electrode portion disposed on one surface side and in contact with one or more first contact regions in the first conductivity type semiconductor layer; and a first electrode portion disposed on one surface side of the element substrate and the second conductivity type two or more second electrode portions contacting one or more second contact regions in the semiconductor layer;
The submount substrate has a third electrode portion and a fourth electrode portion,
the first metal joint electrically connects the first electrode portion and the third electrode portion;
the second metal joint electrically connects the second electrode portion and the fourth electrode portion;
Provided is a semiconductor light emitting device, wherein the total contact area between the fourth electrode portion and the second metal joint portion is larger than the total area of the upper surface of the second electrode portion.

It should be noted that the above summary of the invention does not list all the features of the invention. Subcombinations of these feature groups can also be inventions.

ADVANTAGE OF THE INVENTION According to the semiconductor light-emitting device which concerns on 1 aspect of this invention, it becomes possible to provide the semiconductor light-emitting device which can suppress the influence of heat by implement|achieving high heat dissipation property, maintaining intensity|strength.

1 is a schematic diagram of a semiconductor light emitting element used in a semiconductor light emitting device according to a first example; FIG. 2 is a schematic cross-sectional view obtained by cutting the schematic plan view of FIG. 1 along a line X1-X'1 parallel to the X-axis. FIG. FIG. 2 is a schematic cross-sectional view obtained by cutting the schematic plan view of FIG. 1 along a line X2-X′2 parallel to the X-axis. 1 is a schematic plan view of a submount substrate used in the semiconductor light emitting device according to the first example; FIG. FIG. 4 is a schematic cross-sectional view obtained by cutting the schematic plan view of FIG. 3 along a line X3-X'3 parallel to the X-axis. FIG. 4 is a schematic cross-sectional view obtained by cutting the schematic plan view of FIG. 3 along a line X4-X'4 parallel to the X-axis. 1 is a cross-sectional view showing a configuration example of a semiconductor light emitting device according to Example 1; FIG. 1 is a cross-sectional view showing a configuration example of a semiconductor light emitting device according to Example 1; FIG. FIG. 3 is a schematic diagram showing the area of a contact region S1 between a fourth electrode portion and a second metal junction portion and the area of an upper surface S2 of a second electrode portion in the semiconductor light emitting device according to the first example; It is a cross-sectional schematic diagram of the semiconductor light-emitting device which concerns on the modification of 1st Example. FIG. 10 is a schematic plan view of a semiconductor light emitting element used in a semiconductor light emitting device according to a second embodiment; FIG. 10 is a schematic plan view of a semiconductor light emitting element used in a semiconductor light emitting device according to a second embodiment; FIG. 11 is a schematic plan view of a semiconductor light emitting element used in a semiconductor light emitting device according to a third example; FIG. 11 is a schematic plan view of FIG. 10 with additional regions where the third electrode portion and the fourth electrode portion of the submount substrate are arranged. It is a cross-sectional schematic diagram of the semiconductor light-emitting device which concerns on a 3rd Example. It is a cross-sectional schematic diagram of the semiconductor light-emitting device which concerns on a 3rd Example.

Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. Also, not all combinations of features described in the embodiments are essential for the solution of the invention.

<Semiconductor Light Emitting Device of First Embodiment>
A semiconductor light emitting device of the first embodiment includes a semiconductor light emitting element, a submount substrate, a first metal junction, and a second metal junction.

<<Semiconductor Light Emitting Element in Semiconductor Light Emitting Device of First Embodiment>>
The semiconductor light emitting element in the semiconductor light emitting device of the first embodiment includes an element substrate and a semiconductor device disposed on one side of the element substrate and including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer. a laminated portion, a first electrode portion arranged on one surface side of the element substrate and in contact with one or more first contact regions in the first conductive type semiconductor layer, arranged on the one surface side of the element substrate, and two or more second electrode portions in contact with each of the two or more independent second contact regions in the second conductivity type semiconductor layer.

In plan view, the first contact area is arranged so as to be sandwiched between the second contact areas. Here, "A is sandwiched between Bs in a plan view" means that one or more line segments connecting an arbitrary point that constitutes one B and an arbitrary point that constitutes the other B are part of A. means a form that intersects with Also, "planar view" means viewing from the direction normal to one surface of the element substrate, for example.

It may be preferable that part of the semiconductor layer of the first conductivity type, the light emitting layer, and the semiconductor layer of the second conductivity type have a mesa structure. In this case, it is preferable that the side surface of the mesa structure and another portion of the surface of the first conductivity type semiconductor layer are covered with an insulator.

A portion of the semiconductor layer of the first conductivity type, the light emitting layer, and the semiconductor layer of the second conductivity type have a mesa structure, and the side surface of the mesa structure and the surface of the other part of the semiconductor layer of the first conductivity type are covered with an insulator. As a result, it is possible to prevent the influence of strain from being directly transmitted to the semiconductor layer, and to suppress the influence of heat by realizing high heat dissipation while maintaining the strength.

<<Submount Substrate in Semiconductor Light Emitting Device of First Embodiment>>
The submount substrate has a third electrode portion and a fourth electrode portion. The first metal joint electrically connects the first electrode portion and the third electrode portion. The second metal joint electrically connects the second electrode portion and the fourth electrode portion. At least some of the second metal joints electrically connect the plurality of second electrode portions and the fourth electrode portions. At least a part of the second metal joint electrically connects the plurality of second electrodes and the fourth electrode, thereby realizing high heat dissipation and suppressing the influence of heat while maintaining strength. becomes possible.

<Semiconductor Light Emitting Device of Second Embodiment>
A semiconductor light emitting device of the second embodiment includes a semiconductor light emitting element, a submount substrate, a first metal junction, and a second metal junction. Also, a part of the first conductivity type semiconductor layer, the light emitting layer, and the second conductivity type semiconductor layer have a mesa structure.

<<Semiconductor Light Emitting Element in Semiconductor Light Emitting Device of Second Embodiment>>
The semiconductor light emitting element in the semiconductor light emitting device of the second embodiment includes an element substrate, and a semiconductor device disposed on one side of the element substrate and including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer. a laminated portion, a first electrode portion arranged on one surface side of the element substrate and in contact with one or more first contact regions in the first conductive type semiconductor layer, arranged on the one surface side of the element substrate, and two or more second electrode portions contacting one or more second contact regions in the second conductivity type semiconductor layer.

<<Submount Substrate in Semiconductor Light Emitting Device of Second Embodiment>>
The submount substrate in the semiconductor light emitting device of the second embodiment has a third electrode portion and a fourth electrode portion, and the first metal joint electrically connects the first electrode portion and the third electrode portion. The second metal joint electrically connects the second electrode portion and the fourth electrode portion.

In a cross-sectional view, the side surface of the mesa structure of the semiconductor light emitting device, the other part of the surface of the semiconductor layer of the first conductivity type, and the surface of the second metal joint facing the device substrate are covered with an insulator. have Here, "cross-sectional view" means viewing a cross-section taken along a plane that intersects perpendicularly with one surface of the element substrate, for example. As a result, it is possible to suppress the influence of heat by realizing high heat dissipation while maintaining the strength.

Hereinafter, structural features common to the semiconductor light emitting devices of the above-described first and second embodiments will be described.

<<insulator>>
In the semiconductor light emitting devices according to the first and second embodiments, it may be preferable that at least a part of the second metal joint portion is in contact with the second electrode portion and the insulator. By arranging an insulator, it is possible to suppress the influence of heat by realizing high heat dissipation while maintaining strength without directly transmitting the influence of strain to the semiconductor layer.

Moreover, it may be preferable that the insulator covers at least a part of the first electrode portion. By covering at least a part of the first electrode part with an insulator, the effect of heat is suppressed by achieving high heat dissipation while maintaining strength by not directly transmitting the effect of strain to the semiconductor layer while electrically insulating it. can do.

In some cases, the insulator also preferably covers at least part of the surface of the semiconductor layer of the second conductivity type. By covering at least a part of the surface of the semiconductor layer of the second conductivity type with the insulator, it is possible to electrically insulate the semiconductor layer and prevent the influence of strain from being directly transmitted to the semiconductor layer, thereby maintaining the strength and achieving high heat dissipation. The influence of heat can be suppressed.

It may be preferred that the insulator contains a gas. Since gas expands and compresses easily, the effect of strain can be reduced, and the effect of heat is suppressed by achieving high heat dissipation while maintaining strength by insulating and not directly transmitting the effect of strain to the semiconductor layer. be able to

Also, from the viewpoint of ease of manufacture, it may be preferable for the gas to be the atmosphere.

The insulator may preferably be an insulating layer comprising one or more of silicon oxide, silicon nitride, or silicon oxynitride.

<Semiconductor Light Emitting Device of Third Embodiment>
A semiconductor light emitting device of the third embodiment includes a semiconductor light emitting element, a submount substrate, a first metal junction, and a second metal junction. In some cases, it is preferable that part of the semiconductor layer of the first conductivity type, the light emitting layer, and the semiconductor layer of the second conductivity type have a mesa structure. In this case, it is preferable that the side surface of the mesa structure and another portion of the surface of the first conductivity type semiconductor layer are covered with an insulator.

<<Semiconductor Light Emitting Element in Semiconductor Light Emitting Device of Third Embodiment>>
The semiconductor light emitting element in the semiconductor light emitting device of the third embodiment includes an element substrate and a semiconductor device disposed on one side of the element substrate and including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer. a laminated portion, a first electrode portion arranged on one surface side of an element substrate and arranged so as to be in contact with one or more first contact regions in a first conductivity type semiconductor layer, and one surface of the element substrate. and two or more second electrode portions disposed on the sides and contacting one or more second contact regions in the semiconductor layer of the second conductivity type.

<<Submount Substrate in Semiconductor Light Emitting Device of Third Embodiment>>
The submount substrate in the semiconductor light emitting device of the second embodiment has a third electrode portion and a fourth electrode portion, and the first metal joint electrically connects the first electrode portion and the third electrode portion. The second metal joint electrically connects the second electrode portion and the fourth electrode portion.

A total contact area between the third electrode portion and the first metal joint portion is larger than the total area of the upper surface of the second conductivity type semiconductor layer.

By making the total contact area between the fourth electrode portion and the second metal joint portion larger than the total area of the upper surface of the second electrode portion, the holding strength is increased, and the strength is increased without directly transmitting the effects of strain to the semiconductor layer. While maintaining the

Hereinafter, structural features common to the semiconductor light emitting devices of the above-described first to third embodiments will be described.

<Element substrate>
A sapphire substrate, an aluminum nitride substrate (AlN substrate), or the like can be used as the element substrate in the semiconductor light emitting device of the above-described embodiments. From the viewpoint of improving the reliability of the semiconductor light emitting device 1, the AlN substrate is preferable, and the AlN single crystal substrate is more preferable.

The method for manufacturing the single crystal AlN substrate is not particularly limited, but from the viewpoint of obtaining a high quality single crystal AlN substrate, it is preferable to manufacture the single crystal AlN substrate by a sublimation method using aluminum nitride ceramics as a raw material. The dislocation density of the single crystal AlN substrate is preferably less than 10 ⁷ cm ⁻² , more preferably less than 10 ⁵ cm ⁻² . From the viewpoint of reducing the dislocation density of the first conductivity type semiconductor layer, the RMS surface roughness of the AlN single crystal substrate is preferably less than about 1 nm for an area of 10 μm×10 μm.

<Semiconductor lamination part>
The semiconductor lamination portion in the semiconductor light-emitting device of the above-described embodiment should include at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer, and may include layers other than these. .

The first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer mean that they are semiconductor layers exhibiting different conductivities, respectively. Become. From the viewpoint of improving the crystallinity of the semiconductor laminate as a whole, it may be preferable that the first conductivity type semiconductor layer is an n-type semiconductor layer and the second conductivity type semiconductor layer is a p-type semiconductor layer.

As a layer other than the first conductivity type semiconductor layer, the light emitting layer, and the second conductivity type semiconductor layer, for example, between the light emitting layer and the first conductivity type semiconductor layer and/or the second conductivity type semiconductor layer, an electron Alternatively, a hole-blocking layer may be provided. Further, from the viewpoint of improving ohmic contact with the submount substrate, a contact layer doped with impurities at a high concentration may be provided.

The semiconductor lamination portion can be formed, for example, by MOCVD (Metal Organic Chemical Vapor Deposition). The mesa structure of the semiconductor laminate can be realized by etching a desired region after forming the thin film layers constituting the semiconductor laminate by the above MOCVD method or the like.

<Light emitting layer>
The light-emitting layer emits light according to the bandgap of the light-emitting layer when power is applied. The semiconductor light-emitting device of the present embodiment uses a semiconductor light-emitting element that emits ultraviolet light with a central emission wavelength of 210 nm or more and 320 nm or less, which has been necessary to ensure reliability when high reliability is required in the past. can also be particularly preferably applied because sufficient reliability is ensured.

A preferred form of the light-emitting layer is a multi-quantum well structure. For example, a multi-quantum well structure in which a number of AlGaN layers with different composition ratios (different bandgaps) are laminated can be employed.

<Submount substrate>
The submount substrate is electrically connected to the semiconductor light emitting device. From the viewpoint of improving the heat dissipation of the semiconductor light emitting device, it is preferable that the base portion is made of a material with high heat dissipation. AlN ceramics can be mentioned as a material with high heat dissipation.

<First electrode part>
The first electrode portion is not particularly limited as long as it is arranged so as to be in contact with at least one first contact region on the first conductivity type semiconductor layer. When the first conductivity type semiconductor layer is an n-type semiconductor layer, the first electrode portion is preferably made of a material containing aluminum and nickel from the viewpoint of reducing contact resistance. Materials constituting the n-type semiconductor layer are preferably single crystals and mixed crystals of AlN, GaN, and InN, and specific examples include n-type Al _x Ga _(1-x) N (0≦x≦1). mentioned. In addition, these materials may contain group V elements other than N, such as P, As, and Sb, and impurities such as C, H, F, O, Mg, and Si.

<Second electrode part>
The second electrode portion is not particularly limited as long as it is arranged so as to be in contact with each of two or more independent second contact regions in the second conductivity type semiconductor layer. When the second conductivity type semiconductor layer is a p-type semiconductor layer, if the purpose is to inject holes into the nitride semiconductor element, the second electrode portion may include, for example, Ni, Au, Pt, Ag, Rh, Pd, Pt, Cu and their alloys, ITO, etc. are applied. When the second conductivity type semiconductor layer is a p-type semiconductor layer, the second electrode portion is preferably made of Ni, Au, an alloy thereof, or ITO, which has a low contact resistance with the nitride semiconductor layer.

Also, for connection, the second electrode portion may be formed continuously from, for example, Au, Al, Cu, Ag, W, etc. Among them, Au, which has high conductivity, is preferable. In order to improve adhesion, the second electrode portion may contain Ti at the interface with the second conductivity type semiconductor layer.
<Third electrode portion and fourth electrode portion>

The third electrode portion is not particularly limited as long as it can be electrically connected to the first electrode portion via the first metal joint portion. An example of the third electrode portion includes a structure containing Ni, Au, Ti, W, Al, or the like. From the viewpoint of adhesion and holding strength, the material forming the third electrode portion is preferably an alloy containing Ni and Au.

<First Metal Bonding Portion and Second Metal Bonding Portion>
The first metal joint portion is not particularly limited as long as it electrically connects the first electrode portion and the third electrode portion. An example of the first metal bonding portion includes a configuration including Au, Al, Cu, Ag, and W. The material forming the first metal joint is preferably a material containing Au with high conductivity, and more preferably a material containing Au and Sn because it has a low melting point and can suppress stress generation during bonding. .

The second metal joint portion is not particularly limited as long as it electrically connects the second electrode portion and the fourth electrode portion. An example of the second metal joint includes a structure containing Au, Al, Cu, Ag, and W. The material constituting the second metal joint is preferably a material containing Au with high conductivity, and more preferably a material containing Au and Sn because it has a low melting point and can suppress the generation of stress during bonding. . The material forming the second metal joint may be the same as or different from the material forming the first metal joint.

<Semiconductor light-emitting device>
In the semiconductor light emitting device of the present embodiment, at least a part of the device becomes 55° C. or higher when a power of 4 W is supplied between the first electrode portion and the second electrode portion for 10 seconds at an environmental temperature of 25° C. may be The semiconductor light emitting device of the present embodiment achieves high heat dissipation even when heat is generated when electric power is supplied. can be realized.

From the viewpoint of suppressing manufacturing variations, in the semiconductor light emitting device of the present embodiment, a part of the surface of the first electrode portion may have a region that does not contact the first metal joint portion. Further, the area of the first electrode portion that is not in contact with the first metal joint portion in plan view may be 20% or more and 50% or less of the total area of the first electrode portion in plan view.

<Example>
Next, the semiconductor light emitting device of this embodiment will be described more specifically with reference to the drawings.

It should be noted that the definitions of directions such as up and down in the following description are merely definitions for convenience of description, and do not limit the technical idea of the present disclosure. For example, if an object is observed after being rotated by 90°, it will be read with its top and bottom converted to left and right, and if it is observed after being rotated by 180°, it will of course be read with its top and bottom reversed.

Also, in the following description, directions may be described using the terms X-axis direction, Y-axis direction, and Z-axis direction. For example, the X-axis direction and the Y-axis direction are directions parallel to one surface 11 a of the element substrate 11 . The Z-axis direction is the normal direction of one surface 11 a of the element substrate 11 . The X-axis direction, Y-axis direction and Z-axis direction are orthogonal to each other.

<Semiconductor Light Emitting Device of First Example>
FIG. 1 is a schematic plan view of a semiconductor light emitting element 10 used in a semiconductor light emitting device 1 according to a first embodiment of the invention. FIG. 2A is a schematic cross-sectional view obtained by cutting the schematic plan view of FIG. 1 along line X1-X'1 parallel to the X-axis. FIG. 2B is a schematic cross-sectional view obtained by cutting the schematic plan view of FIG. 1 along a line X2-X'2 parallel to the X-axis.

As shown in FIGS. 1 to 2B, the semiconductor light emitting device 10 includes a device substrate 11 and a semiconductor lamination portion 12 provided on one surface 11 a of the device substrate 11 . The semiconductor lamination portion 12 has a first conductivity type semiconductor layer 121 , a light emitting layer 122 and a second conductivity type semiconductor layer 123 . The semiconductor lamination portion 12 includes a portion 121A of the first conductivity type semiconductor layer, another portion 121B of the first conductivity type semiconductor layer, and a light emitting layer 122 provided on the portion 121A of the first conductivity type semiconductor layer. and a second-conductivity-type semiconductor layer 123 provided over the light-emitting layer 122 . The semiconductor lamination portion 12 has a mesa structure 12A composed of a portion 121A of a first conductivity type semiconductor layer, a light emitting layer 122, and a second conductivity type semiconductor layer 123. As shown in FIG. In the embodiment of FIG. 1, the semiconductor stack 12 has two independent (that is, spaced apart) mesa structures.

A first electrode portion 13 is arranged on another portion 121B of the first conductivity type semiconductor layer so as to be in contact with the first contact region C1. The first electrode portion 13 is arranged on the one surface 11a side of the element substrate 11 and is in contact with one first contact region C1 in the other part 121B of the first conductivity type semiconductor layer. A second electrode portion 14 is arranged on the second conductivity type semiconductor layer 123 so as to be in contact with the second contact region C2. The second electrode portion 14 is arranged on the one surface 11a side of the element substrate 11 and is in contact with two independent second contact regions C2 in the second conductivity type semiconductor layer 123 in pairs. The first contact area C1 is arranged so as to be sandwiched between the second contact areas C2.

FIG. 3 is a schematic plan view of the submount substrate 20 used in the semiconductor light emitting device according to the first embodiment of the invention. FIG. 4A is a schematic cross-sectional view obtained by cutting the schematic plan view of FIG. 3 along line X3-X'3 parallel to the X-axis. FIG. 4B is a schematic cross-sectional view obtained by cutting the schematic plan view of FIG. 3 along a line X4-X'4 parallel to the X-axis. Note that FIG. 3 shows the back side of the submount substrate 20 . The back surface of the submount substrate 20 shown in FIG. 3 corresponds to the bottom surface of the submount substrate 20 in FIGS. 4A and 4B. As shown in FIGS. 3 to 4B , the submount substrate 20 includes a substrate body 23 and a third electrode portion 21 and a fourth electrode portion 22 formed on the substrate body 23 .

5A and 5B are cross-sectional views showing configuration examples of the semiconductor light emitting device 1 according to Example 1 of the present invention. By turning over the submount substrate 20 shown in FIG. 3, facing the semiconductor light emitting device 10 shown in FIG. The semiconductor light emitting device 1 shown in FIGS. 5A and 5B can be obtained.

As shown in FIG. 5A , in the semiconductor light emitting device 10 , one first electrode portion 13 is arranged on one surface 11 a of the device substrate 11 . One first electrode portion 13 is in contact with the first contact region C1 in the other portion 121B of the first conductivity type semiconductor layer. The first metal joint portion 31 is arranged between the semiconductor light emitting device 10 and the submount substrate 20 . The first metal joint portion 31 electrically connects the first electrode portion 13 and the third electrode portion 21 of the submount substrate 20 .

As shown in FIG. 5B , in the semiconductor light emitting device 10 , two second electrode portions 14 are arranged on one surface 11 a side of the device substrate 11 . The two second electrode portions 14 are in contact with two independent first contact regions C1 in the portion 121A of the first conductivity type semiconductor layer 121 in pairs. The second metal joint portion 32 electrically connects the two second electrode portions 14 and the fourth electrode portion 22 of the submount substrate 20 . In addition, the side surface of the mesa structure 12A, the other part 121B of the first conductivity type semiconductor layer, and the surface of the second metal joint portion 32 facing the element substrate 11 are covered with the atmosphere 41 as an insulator. there is

FIG. 6 shows the area of the contact region S1 between the fourth electrode portion 22 and the second metal junction portion 32 and the area of the upper surface S2 of the second electrode portion 14 in the semiconductor light emitting device 1 according to the first embodiment of the present invention. (Area inside the solid line). Other elements are indicated by dotted lines. As is clear from FIG. 6, the area of the contact region S1 between the fourth electrode portion 22 and the second metal joint portion 32 (the area inside the two-dotted dashed line) is greater than the sum of the areas of the upper surfaces S2 of the second electrode portions 14. is also big.

By adopting such a structure, the semiconductor light emitting device 1 can achieve high heat dissipation and suppress the influence of heat while maintaining strength.

<<Modification>>
FIG. 7 is a schematic cross-sectional view of a semiconductor light emitting device 1A according to a modification of the first embodiment of the invention. The cross section of the semiconductor light emitting device 1A shown in FIG. 7 corresponds to the cross section taken along line X2-X'2 in FIG. 1 and the cross section taken along line X4-X'4 in FIG. In the semiconductor light-emitting device 1A shown in FIG. 7, when compared with the semiconductor light-emitting device 1 shown in FIG. It differs in that it is an insulating layer 42 instead of 41 . The insulating layer 42 may be, for example, a single layer film composed of silicon oxide, silicon nitride, or silicon oxynitride, or may be a laminated film containing one or more of these.

Even with such a structure, the semiconductor light emitting device 1A can achieve high heat dissipation and suppress the influence of heat while maintaining strength.

<Semiconductor Light Emitting Device of Second Example>
8 and 9 are schematic plan views of a semiconductor light emitting element 10 used in a semiconductor light emitting device 1B according to a second embodiment of the present invention. FIG. 8 is a diagram illustrating the contact region S1 and the upper surface S2 of the second electrode portion 14 in the semiconductor light emitting device 1B according to the second example. FIG. 9 is a diagram illustrating two second contact areas C2 and a bridge area B1 connecting the two second contact areas C2. The configuration of the submount substrate 20 used in the semiconductor light emitting device 1B according to the second embodiment is the same as that of the submount substrate 20 (see FIG. 3) used in the semiconductor light emitting device 1 according to the first embodiment, for example. Therefore, illustration of the repetition is omitted.

As shown in FIGS. 8 and 9, in the semiconductor light emitting device 10B according to the second embodiment, when compared with the semiconductor light emitting device 10 shown in FIG. different in that they are connected In the semiconductor light emitting device 10B, the two second contact regions C2 are connected and integrated via the bridge region B1. This integrated structure forms a mesa structure 12A (see FIG. 2B). Other configurations of the semiconductor light emitting device 10B are the same as those of the semiconductor light emitting device 10 .

Therefore, like the semiconductor light emitting device 10 shown in FIG. 2B, also in the semiconductor light emitting device 10B, the side surface of the mesa structure 12A, the other portion 121B of the first conductivity type semiconductor layer, and the device substrate of the second metal junction portion The surface on the side opposite to is covered with air 41 as an insulator.

Also, the area of the contact region S1 between the fourth electrode portion 22 and the second metal joint portion 32 is larger than the total area of the upper surface S2 of the second electrode portion 14 .

By adopting such a structure, it is possible to secure a wide bonding surface between the semiconductor light emitting element 10 and the second metal bonding portion 32 and a bonding surface between the second metal bonding portion 32 and the submount substrate 20 . , the bonding strength between the semiconductor light emitting element 10 and the submount substrate 20 can be increased. As a result, the semiconductor light emitting device 1B can achieve high heat dissipation and suppress the influence of heat while further maintaining the strength.

<Semiconductor Light Emitting Device of Third Example>
FIG. 10 is a schematic plan view of a semiconductor light emitting element 10 used in a semiconductor light emitting device 1C according to the third embodiment of the invention. FIG. 11 is a schematic plan view of FIG. 10 with additional regions where the third electrode portion 21 and the fourth electrode portion 22 of the submount substrate 20 are arranged. 12A and 12B are schematic cross-sectional views of a semiconductor light emitting device 1C according to a third embodiment of the invention. FIG. 12A shows a cross section along X5-X'5 in FIG. FIG. 12B shows a cross section along X6-X'6 in FIG.

In the semiconductor light emitting device 1C according to the third embodiment, the first contact region C1 where the first electrode portion 13 is in contact with the first conductivity type semiconductor layer 121 is larger than the semiconductor light emitting device 1 according to the first embodiment. Multiple exist. There are also a plurality of second contact regions C2 where the second electrode portion 14 is in contact with the second conductivity type semiconductor layer 123 . The first electrode portion 13 has a comb shape in plan view, and the second electrode portion 14 is arranged between adjacent combs. From another point of view, the first contact area C1 is sandwiched between the second contact areas C2 or is adjacent to the second contact area C2.

With such a structure, the semiconductor light-emitting device 1C can more efficiently supply power to the light-emitting portion (for example, the light-emitting layer 122), and achieve high heat dissipation while maintaining strength. It is possible to realize and suppress the influence of heat.

1 semiconductor light emitting device 10 semiconductor light emitting element 11 element substrate 11a one side of element substrate 121 first conductivity type semiconductor layer 121A part of first conductivity type semiconductor layer 121B other part of first conductivity type semiconductor layer 122 light emitting layer 123 Second conductivity type semiconductor layer 12 Semiconductor laminated portion 12A Mesa structure 13 First electrode portion 14 Second electrode portion 20 Submount substrate 21 Third electrode portion 22 Fourth electrode portion 23 Substrate main body 31 First metal joint portion 32 Second Metal joint 42 Insulator (insulating layer)
C1 First contact area C2 Second contact area B1 Bridge area S1 Contact area S2 Upper surface of the second electrode part

Claims (15)

A semiconductor light emitting device comprising a semiconductor light emitting element, a submount substrate, a first metal junction, and a second metal junction,
The semiconductor light emitting device is
an element substrate;
a semiconductor lamination portion disposed on one surface side of the element substrate and including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer;
a first electrode portion disposed on one surface side of the element substrate and in contact with one or more first contact regions in the first conductivity type semiconductor layer;
two or more second electrode portions disposed on one surface side of the element substrate and in contact with two or more independent second contact regions in the second conductivity type semiconductor layer, respectively;
In plan view, the first contact area is arranged so as to be sandwiched between the second contact areas,
The submount substrate has a third electrode portion and a fourth electrode portion,
the first metal joint electrically connects the first electrode portion and the third electrode portion;
the second metal joint electrically connects the second electrode portion and the fourth electrode portion;
The semiconductor light emitting device, wherein at least some of the second metal junctions electrically connect the plurality of second electrode portions and the fourth electrode portion. a portion of the first conductivity type semiconductor layer, the light emitting layer, and the second conductivity type semiconductor layer have a mesa structure;
2. The semiconductor light-emitting device according to claim 1, wherein a side surface of said mesa structure and another part of the surface of said first conductivity type semiconductor layer are covered with an insulator. A semiconductor light emitting device comprising a semiconductor light emitting element, a submount substrate, a first metal junction, and a second metal junction,
The semiconductor light emitting device is
an element substrate;
a semiconductor lamination portion disposed on one surface side of the element substrate and including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer;
a first electrode portion disposed on one surface side of the element substrate and in contact with one or more first contact regions in the first conductivity type semiconductor layer;
two or more second electrode portions arranged on one surface side of the element substrate and in contact with one or more second contact regions in the second conductivity type semiconductor layer;
The submount substrate has a third electrode portion and a fourth electrode portion,
the first metal joint electrically connects the first electrode portion and the third electrode portion;
the second metal joint electrically connects the second electrode portion and the fourth electrode portion;
a portion of the first conductivity type semiconductor layer, the light emitting layer, and the second conductivity type semiconductor layer have a mesa structure;
In a cross-sectional view, the side surface of the mesa structure, the surface of another part of the semiconductor layer of the first conductivity type, and the surface of the second metal joint facing the element substrate are covered with an insulator. A semiconductor light emitting device having 4 . The semiconductor light emitting device according to claim 2 , wherein the at least part of the second metal joint portion is in contact with the second electrode portion and the insulator. 5. The semiconductor light emitting device according to claim 2, wherein said insulator further covers at least part of said first electrode portion. 6. The semiconductor light-emitting device according to claim 2, wherein said insulator also covers at least part of the surface of said second conductivity type semiconductor layer. The semiconductor light emitting device according to any one of claims 2 to 6, wherein the insulator contains gas. The semiconductor light-emitting device according to claim 7, wherein the gas is air. 9. The semiconductor light emitting device according to claim 2, wherein said insulator contains at least one of silicon oxide, silicon nitride, and silicon oxynitride. The semiconductor light emitting device according to any one of claims 1 to 9, wherein a total contact area between said third electrode portion and said first metal junction portion is larger than a total area of an upper surface of said second conductivity type semiconductor layer. Device. A semiconductor light emitting device comprising a semiconductor light emitting element, a submount substrate, a first metal junction, and a second metal junction,
The semiconductor light emitting device is
an element substrate;
a semiconductor lamination portion disposed on one surface side of the element substrate and including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer;
a first electrode portion disposed on one surface side of the element substrate and in contact with one or more first contact regions in the first conductivity type semiconductor layer;
two or more second electrode portions arranged on one surface side of the element substrate and in contact with one or more second contact regions in the second conductivity type semiconductor layer;
has
The submount substrate has a third electrode portion and a fourth electrode portion,
the first metal joint electrically connects the first electrode portion and the third electrode portion;
the second metal joint electrically connects the second electrode portion and the fourth electrode portion;
A semiconductor light emitting device according to claim 1, wherein a total contact area between said fourth electrode portion and said second metal joint portion is larger than a total area of an upper surface of said second electrode portion. 12. The semiconductor light emitting device according to claim 1, wherein said first metal junction and said second metal junction contain at least one of Au, Sn, Cu and Ag. Any one of claims 1 to 12, wherein when an electrode of 4 W is supplied for 10 seconds at an ambient temperature of 25°C between the first electrode portion and the second electrode portion, at least a portion thereof becomes 55°C or higher. 1. The semiconductor light emitting device according to item 1. 14. The semiconductor light-emitting device according to claim 1, wherein a part of the surface of said first electrode portion has a region not in contact with said first metal junction portion. 15. The semiconductor according to claim 14, wherein the area of the region of the first electrode portion that is not in contact with the first metal joint portion in plan view is 20% or more and 50% or less of the total area of the first electrode portion in plan view. Luminescent device.

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