JP2022102828A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

To provide a technique for efficiently adsorbing a warped substrate.SOLUTION: A substrate processing apparatus includes a holding unit, a suction pressure generating unit, and a control unit. The holding unit includes a first circular region and a second annular region arranged outside the first region on the suction surface for sucking a substrate. The suction pressure generating unit causes a first portion which is a part in the circumferential direction of the first region and the second region, and a second portion which is a part of the other circumferential direction of the second region to individually generate suction pressure. The control unit controls the suction pressure generation unit. The control unit generates a suction pressure in the first region, generates a suction pressure in the first portion of the second region, and generates a suction pressure in the second portion of the second region in this order.SELECTED DRAWING: Figure 15

Description

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

The joining device described in Patent Document 1 includes an upper chuck that sucks the upper substrate from above and a lower chuck that sucks the lower substrate from below, and joins the two substrates after facing each other. Specifically, the joining device first pushes down the central portion of the substrate attracted to the upper chuck and brings it into contact with the central portion of the substrate attracted to the lower chuck. As a result, the central portions of the two substrates are joined by an intramolecular force or the like. The joining device then extends the joined joining region of the two substrates from the central portion to the outer peripheral portion.

Japanese Unexamined Patent Publication No. 2015-095579

One aspect of the present disclosure provides a technique for efficiently adsorbing a warped substrate.

The substrate processing apparatus according to one aspect of the present disclosure includes a holding unit, an adsorption pressure generating unit, and a control unit. The holding portion includes a first circular region and an annular second region arranged outside the first region on the suction surface for sucking the substrate. The suction pressure generating portion is individually divided into the first region, the first portion which is a circumferential part of the second region, and the second portion which is another circumferential part of the second region. Generates adsorption pressure. The control unit controls the suction pressure generation unit. The control unit generates a suction pressure in the first region, generates a suction pressure in the first portion of the second region, and generates a suction pressure in the second portion of the second region. And to execute in this order.

According to one aspect of the present disclosure, the warped substrate can be efficiently adsorbed by shifting the timing of generating the adsorption pressure between the first portion and the second portion of the second region.

FIG. 1 is a plan view showing a joining device according to an embodiment. FIG. 2 is a side view of the joining device of FIG. FIG. 3 is a side view showing an example of the first substrate and the second substrate. FIG. 4 is a flowchart showing a joining method according to an embodiment. FIG. 5 is a side view showing an example of the first position adjusting device. FIG. 6 is a plan view showing an example of a joining module. FIG. 7 is a side view of the joining module of FIG. FIG. 8 is a cross-sectional view showing an example of the upper chuck and the lower chuck. FIG. 9 is a flowchart showing the details of step S109 of FIG. 10 (A) is a side view showing an example of the operation in step S112, FIG. 10 (B) is a side view showing the operation following FIG. 10 (A), and FIG. 10 (C) is FIG. 10 (B). It is a side view which shows the operation following). 11 (A) is a cross-sectional view showing an example of the operation in step S113, FIG. 11 (B) is a cross-sectional view showing an example of the operation in step S114, and FIG. 11 (C) is shown in FIG. 11 (B). It is sectional drawing which shows the following operation. FIG. 12 is a plan view showing an example of a section of the suction surface of the lower chuck. FIG. 13 is a diagram showing an example of a suction pressure generating portion. 14 (A) is a perspective view showing a first example of warpage of the lower wafer, and FIG. 14 (B) is a diagram showing the distance between the suction surface and the lower wafer in the first virtual straight line, and FIG. 14 (C) is a diagram. Is a diagram showing the distance between the suction surface and the lower wafer in the second virtual straight line. 15 (A) is a perspective view showing the first example of the order in which the suction pressure is generated when the lower wafer shown in FIG. 14 is sucked, and FIG. 15 (B) shows the suction pressure following FIG. 15 (A). It is a perspective view which shows the 1st example of the order of generating. 16 (A) is a perspective view showing a second example of the order in which the suction pressure is generated when the lower wafer shown in FIG. 14 is sucked, and FIG. 16 (B) shows the suction pressure following FIG. 16 (A). It is a perspective view which shows the 2nd example of the order of generating. FIG. 17A is a perspective view showing a second example of warpage of the lower wafer, FIG. 17B is a diagram showing the distance between the suction surface and the lower wafer in the first virtual straight line, and FIG. 17C is a diagram. Is a diagram showing the distance between the suction surface and the lower wafer in the second virtual straight line. 18 (A) is a perspective view showing an example of the order in which the suction pressure is generated when the lower wafer shown in FIG. 17 is sucked, and FIG. 18 (B) shows the suction pressure generated following FIG. 18 (A). It is a perspective view which shows an example of the order of making. 19 (A) is a cross-sectional view showing a first example of the local suction portion, FIG. 19 (B) is a cross-sectional view showing a second example of the local suction portion, and FIG. 19 (C) is a cross-sectional view of the local suction portion. It is sectional drawing which shows the 3rd example.

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same or corresponding configurations may be designated by the same reference numerals and description thereof may be omitted. Further, the X-axis direction, the Y-axis direction, and the Z-axis direction are perpendicular to each other, the X-axis direction and the Y-axis direction are the horizontal direction, and the Z-axis direction is the vertical direction.

First, the joining device 1 according to the present embodiment will be described with reference to FIGS. 1 and 2. The substrate processing device of the present disclosure is not limited to the joining device 1, and may be, for example, an exposure device or a temperature control device. The exposure apparatus transfers the mask pattern onto the substrate. The temperature controller regulates the temperature of the substrate. The substrate processing apparatus may be any as long as it includes a holding portion for holding the substrate and processes the substrate held by the holding portion.

As shown in FIG. 3, the joining device 1 joins the first substrate W1 and the second substrate W2 to produce a polymerized substrate T. At least one of the first substrate W1 and the second substrate W2 is a substrate in which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. One of the first substrate W1 and the second substrate W2 may be a bare wafer on which no electronic circuit is formed. The first substrate W1 and the second substrate W2 have substantially the same diameter. The compound semiconductor wafer is not particularly limited, and is, for example, a GaAs wafer, a SiC wafer, a GaN wafer, or an InP wafer.

Hereinafter, the first substrate W1 may be referred to as “upper wafer W1”, the second substrate W2 may be referred to as “lower wafer W2”, and the polymerization substrate T may be referred to as “polymerization wafer T”. As shown in FIG. 3, among the plate surfaces of the upper wafer W1, the plate surface on the side bonded to the lower wafer W2 is described as "joining surface W1j", and the plate surface on the side opposite to the bonding surface W1j is "non-". It is described as "joint surface W1n". Further, among the plate surfaces of the lower wafer W2, the plate surface on the side to be bonded to the upper wafer W1 is described as "bonding surface W2j", and the plate surface on the side opposite to the bonding surface W2j is referred to as "non-bonding surface W2n". Describe.

As shown in FIG. 1, the joining device 1 includes a loading / unloading station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are arranged side by side in the order of the carry-in / out station 2 and the processing station 3 along the positive direction of the X-axis. Further, the loading / unloading station 2 and the processing station 3 are integrally connected.

The loading / unloading station 2 includes a mounting table 10 and a transport area 20. The mounting table 10 includes a plurality of mounting plates 11. Cassettes CS1, CS2, and CS3 for horizontally accommodating a plurality of (for example, 25) substrates are mounted on each mounting plate 11. The cassette CS1 is a cassette accommodating the upper wafer W1, the cassette CS2 is a cassette accommodating the lower wafer W2, and the cassette CS3 is a cassette accommodating the polymerized wafer T. In the cassettes CS1 and CS2, the upper wafer W1 and the lower wafer W2 are housed in the same direction with the joining surfaces W1j and W2j facing up, respectively.

The transport area 20 is arranged adjacent to the X-axis positive direction side of the mounting table 10. The transport area 20 is provided with a transport path 21 extending in the Y-axis direction and a transport device 22 movable along the transport path 21. The transfer device 22 is movable in the X-axis direction and can be swiveled around the Z-axis, and has cassettes CS1 to CS3 mounted on the mounting table 10 and a third processing block PB3 of the processing station 3 described later. The upper wafer W1, the lower wafer W2, and the polymerized wafer T are transferred between them.

The number of cassettes CS1 to CS3 mounted on the mounting table 10 is not limited to those shown in the figure. Further, in addition to the cassettes CS1, CS2, and CS3, a cassette or the like for collecting a defective substrate may be placed on the mounting table 10.

The processing station 3 is provided with, for example, three processing blocks PB1, PB2, and PB3. For example, the first processing block PB1 is provided on the back side of the processing station 3 (the Y-axis positive direction side in FIG. 1), and the second processing block PB1 is provided on the front side of the processing station 3 (the Y-axis negative direction side in FIG. 1). The processing block PB2 is provided. Further, a third processing block PB3 is provided on the loading / unloading station 2 side (X-axis negative direction side in FIG. 1) of the processing station 3.

Further, a transport region 60 is formed in a region surrounded by the first processing block PB1 to the third processing block PB3. A transport device 61 is arranged in the transport region 60. The transport device 61 has, for example, a transport arm that is movable in the vertical direction, the horizontal direction, and around the vertical axis.

The transfer device 61 moves in the transfer area 60, and the upper wafer W1, the lower wafer W2, and the predetermined devices in the first processing block PB1, the second processing block PB2, and the third processing block PB3 adjacent to the transfer area 60 The polymerized wafer T is conveyed.

For example, a surface modification device 33 and a surface hydrophilization device 34 are arranged in the first treatment block PB1. The surface modifying device 33 modifies the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2. The surface hydrophilization device 34 hydrophilizes the modified joint surface W1j of the upper wafer W1 and the joint surface W2j of the lower wafer W2.

For example, the surface modification device 33 breaks the bond of SiO ₂ on the joint surfaces W1j and W2j to form an unbonded hand of Si, and enables subsequent hydrophilization. In the surface reforming apparatus 33, for example, oxygen gas, which is a processing gas, is excited to be turned into plasma and ionized in a reduced pressure atmosphere. Then, by irradiating the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 with oxygen ions, the bonding surfaces W1j and W2j are plasma-treated and reformed. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.

The surface hydrophilization device 34 hydrophilizes the joint surface W1j of the upper wafer W1 and W2j of the lower wafer W2 with a hydrophilization treatment liquid such as pure water. The surface hydrophilization device 34 also has a role of cleaning the joint surfaces W1j and W2j. In the surface hydrophilization device 34, for example, pure water is supplied onto the upper wafer W1 or the lower wafer W2 while rotating the upper wafer W1 or the lower wafer W2 held by the spin chuck. As a result, pure water diffuses on the joint surfaces W1j and W2j, OH groups are attached to the unbonded hands of Si, and the joint surfaces W1j and W2j are hydrophilized.

For example, a joining module 41 is arranged in the second processing block PB2. The bonding module 41 joins the hydrophilized upper wafer W1 and the lower wafer W2 to produce a polymerized wafer T. The first temperature control device 42 adjusts the temperature distribution of the upper wafer W1 before joining, that is, before contacting with the lower wafer W2. The second temperature control device 43 adjusts the temperature distribution of the lower wafer W2 before joining, that is, before contacting with the upper wafer W1. In the present embodiment, the first temperature control device 42 and the second temperature control device 43 are provided separately from the joining module 41, but may be provided as a part of the joining module 41.

In the third processing block PB3, for example, the first position adjusting device 51, the second position adjusting device 52, and the transition devices 53, 54 are stacked and arranged in this order from the upper side to the lower side (FIG. 2). reference). The placement location of each device in the third processing block PB3 is not limited to the placement location shown in FIG. The first position adjusting device 51 adjusts the horizontal direction of the upper wafer W1 and turns the upper wafer W1 upside down so that the joining surface W1j of the upper wafer W1 faces downward. The second position adjusting device 52 adjusts the horizontal orientation of the lower wafer W2. The upper wafer W1 is temporarily placed on the transition device 53. Further, the lower wafer W2 and the polymerization wafer T are temporarily placed on the transition device 54.

The joining device 1 includes a control device 90. The control device 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs that control various processes executed by the joining device 1. The control device 90 controls the operation of the joining device 1 by causing the CPU 91 to execute the program stored in the storage medium 92.

Next, the joining method of the present embodiment will be described with reference to FIG. Steps S101 to S109 shown in FIG. 4 are carried out under the control of the control device 90.

First, a cassette CS1 containing a plurality of upper wafers W1, a cassette CS2 containing a plurality of lower wafers W2, and an empty cassette CS3 are placed on the mounting table 10 of the loading / unloading station 2.

Next, the transfer device 22 takes out the upper wafer W1 in the cassette CS1 and transfers it to the transition device 53 of the third processing block PB3 of the processing station 3. After that, the transfer device 61 takes out the upper wafer W1 from the transition device 53 and transfers it to the surface reforming device 33 of the first processing block PB1.

Next, the surface reforming device 33 modifies the joint surface W1j of the upper wafer W1 (step S101). The modification of the joint surface W1j is carried out with the joint surface W1j facing upward. After that, the transfer device 61 takes out the upper wafer W1 from the surface reforming device 33 and transfers it to the surface hydrophilization device 34.

Next, the surface hydrophilization device 34 hydrophilizes the joint surface W1j of the upper wafer W1 (step S102). Hydrophilization of the joint surface W1j is carried out with the joint surface W1j facing upward. After that, the transfer device 61 takes out the upper wafer W1 from the surface hydrophilization device 34 and transfers it to the first position adjusting device 51 of the third processing block PB3.

Next, the first position adjusting device 51 adjusts the horizontal direction of the upper wafer W1 and turns the upper wafer W1 upside down (step S103). As a result, the notch of the upper wafer W1 is oriented in a predetermined direction, and the bonding surface W1j of the upper wafer W1 is directed downward. After that, the transfer device 61 takes out the upper wafer W1 from the first position adjusting device 51 and transfers it to the first temperature adjusting device 42 of the second processing block PB2.

Next, the first temperature control device 42 adjusts the temperature of the upper wafer W1 (step S104). The temperature control of the upper wafer W1 is performed with the joining surface W1j of the upper wafer W1 facing downward. After that, the transfer device 61 takes out the upper wafer W1 from the first temperature control device 42 and transfers it to the joining module 41.

In parallel with the above processing for the upper wafer W1, the following processing for the lower wafer W2 is performed. First, the transfer device 22 takes out the lower wafer W2 in the cassette CS2 and transfers it to the transition device 54 of the third processing block PB3 of the processing station 3. After that, the transfer device 61 takes out the lower wafer W2 from the transition device 54 and transfers it to the surface reforming device 33 of the first processing block PB1.

Next, the surface reforming device 33 modifies the joint surface W2j of the lower wafer W2 (step S105). The modification of the joint surface W2j is carried out with the joint surface W2j facing up. After that, the transport device 61 takes out the lower wafer W2 from the surface reformer 33 and transports it to the surface hydrophilization device 34.

Next, the surface hydrophilization device 34 hydrophilizes the joint surface W2j of the lower wafer W2 (step S106). Hydrophilization of the joint surface W2j is carried out with the joint surface W2j facing upward. After that, the transfer device 61 takes out the lower wafer W2 from the surface hydrophilization device 34 and transfers it to the second position adjusting device 52 of the third processing block PB3.

Next, the second position adjusting device 52 adjusts the horizontal orientation of the lower wafer W2 (step S107). As a result, the notch of the lower wafer W2 is oriented in a predetermined direction. After that, the transfer device 61 takes out the lower wafer W2 from the second position adjusting device 52 and transfers it to the second temperature adjusting device 43 of the second processing block PB2.

Next, the second temperature control device 43 adjusts the temperature of the lower wafer W2 (step S108). The temperature control of the lower wafer W2 is performed with the joint surface W2j of the lower wafer W2 facing upward. After that, the transfer device 61 takes out the lower wafer W2 from the second temperature control device 43 and transfers it to the joining module 41.

Next, the joining module 41 joins the upper wafer W1 and the lower wafer W2 to manufacture the polymerized wafer T (step S109). After that, the transfer device 61 takes out the polymerized wafer T from the bonding module 41 and transfers it to the transition device 54 of the third processing block PB3.

Finally, the transfer device 22 takes out the polymerized wafer T from the transition device 54 and transfers it to the cassette CS3 on the mounting table 10. This ends a series of processes.

Next, an example of the first position adjusting device 51 will be described with reference to FIG. Since the second position adjusting device 52 is configured in the same manner as the first position adjusting device 51 except that it does not have the base reversing portion 51d, the description thereof will be omitted.

The first position adjusting device 51 includes a base 51a, a holding portion 51b that sucks and holds the upper wafer W1 and rotates it, and a detection unit 51c that detects the positions of the notches of the upper wafer W1 and the lower wafer W2. While the holding unit 51b sucks and holds the upper wafer W1 and rotates it, the detection unit 51c detects the position of the notch of the upper wafer W1 to adjust the position of the notch and adjust the horizontal orientation of the upper wafer W1. Will be done.

Further, the first position adjusting device 51 has a base reversing portion 51d that reverses the base 51a. The base reversing portion 51d is provided with, for example, a motor or the like, the base 51a is turned upside down, and the upper wafer W1 held by the holding portion 51b is turned upside down. As a result, the joint surface W1j of the upper wafer W1 faces downward.

Next, an example of the joining module 41 will be described with reference to FIGS. 6 to 8. As shown in FIG. 6, the joining module 41 has a processing container 210 whose inside can be sealed. A carry-in outlet 211 is formed on the side surface of the processing container 210 on the transport region 60 side, and an open / close shutter 212 is provided at the carry-in outlet 211. The upper wafer W1, the lower wafer W2, and the polymerized wafer T are carried in and out via the carry-in outlet 211.

As shown in FIG. 7, an upper chuck 230 and a lower chuck 231 are provided inside the processing container 210. The upper chuck 230 holds the upper wafer W1 from above with the joining surface W1j of the upper wafer W1 facing downward. Further, the lower chuck 231 is provided below the upper chuck 230, and holds the lower wafer W2 from below with the joining surface W2j of the lower wafer W2 facing upward.

The upper chuck 230 is supported by a support member 280 provided on the ceiling surface of the processing container 210. On the other hand, the lower chuck 231 is supported by the first lower chuck moving portion 291 provided below the lower chuck 231.

The first lower chuck moving unit 291 moves the lower chuck 231 in the horizontal direction (Y-axis direction) as described later. Further, the first lower chuck moving portion 291 is configured so that the lower chuck 231 can be moved in the vertical direction and can be rotated around the vertical axis.

The first lower chuck moving portion 291 is provided on the lower surface side of the first lower chuck moving portion 291 and is attached to a pair of rails 295 extending in the horizontal direction (Y-axis direction). The first lower chuck moving portion 291 is configured to be movable along the rail 295. The rail 295 is provided on the second lower chuck moving portion 296.

The second lower chuck moving portion 296 is provided on the lower surface side of the second lower chuck moving portion 296, and is attached to a pair of rails 297 extending in the horizontal direction (X-axis direction). The second lower chuck moving portion 296 is configured to be movable along the rail 297, that is, to move the lower chuck 231 in the horizontal direction (X-axis direction). The pair of rails 297 are provided on a mounting table 298 provided on the bottom surface of the processing container 210.

The first lower chuck moving portion 291 and the second lower chuck moving portion 296 form a moving mechanism 290. The moving mechanism 290 moves the relative positions of the upper chuck 230 and the lower chuck 231 between the substrate delivery position and the joining position.

The substrate delivery position is such that the upper chuck 230 receives the upper wafer W1 from the transfer device 61, the lower chuck 231 receives the lower wafer W2 from the transfer device 61, and the lower chuck 231 transfers the polymerized wafer T to the transfer device 61. be. At the substrate delivery position, the carry-out of the polymerized wafer T produced by the n (n is a natural number of 1 or more) times and the carry-in of the upper wafer W1 and the lower wafer W2 joined by the n + 1th joining are continuous. The position where it will be done. The substrate delivery position is, for example, the position shown in FIGS. 6 and 7.

When the upper wafer W1 is passed to the upper chuck 230, the transfer device 61 enters directly below the upper chuck 230. Further, the transfer device 61 receives the polymerized wafer T from the lower chuck 231 and enters directly above the lower chuck 231 when the lower wafer W2 is passed to the lower chuck 231. The upper chuck 230 and the lower chuck 231 are laterally displaced so that the transport device 61 can easily enter, and the vertical distance between the upper chuck 230 and the lower chuck 231 is also large.

On the other hand, the joining position is a position where the upper wafer W1 and the lower wafer W2 face each other at a predetermined interval and are joined. The joining position is, for example, the position shown in FIG. At the joining position, the distance between the upper wafer W1 and the lower wafer W2 in the vertical direction is narrower than that at the substrate delivery position. Further, at the joining position, unlike the substrate delivery position, the upper wafer W1 and the lower wafer W2 overlap each other in the vertical direction.

The moving mechanism 290 moves the relative positions of the upper chuck 230 and the lower chuck 231 in the horizontal direction (both in the X-axis direction and the Y-axis direction) and in the vertical direction. In the present embodiment, the moving mechanism 290 moves the lower chuck 231. However, either the lower chuck 231 or the upper chuck 230 may be moved, or both may be moved. Further, the moving mechanism 290 may rotate the upper chuck 230 or the lower chuck 231 around a vertical axis.

As shown in FIG. 8, the upper chuck 230 is divided into a plurality of (for example, three) regions 230a, 230b, 230c. These regions 230a, 230b, and 230c are provided in this order from the central portion to the peripheral portion of the upper chuck 230. The regions 230a have a circular shape in a plan view, and the regions 230b and 230c have an annular shape in a plan view.

Suction tubes 240a, 240b, 240c are independently provided in each of the regions 230a, 230b, and 230c. Different vacuum pumps 241a, 241b, 241c are connected to the suction pipes 240a, 240b, 240c, respectively. The upper chuck 230 can vacuum-adsorb the upper wafer W1 for each of the regions 230a, 230b, and 230c.

The upper chuck 230 is provided with a plurality of holding pins 245 that can be raised and lowered in the vertical direction. The plurality of holding pins 245 are connected to the vacuum pump 246, and the upper wafer W1 is vacuum-sucked by the operation of the vacuum pump 246. The upper wafer W1 is vacuum-sucked to the lower ends of the plurality of holding pins 245. Instead of the plurality of holding pins 245, a ring-shaped suction pad may be used.

The plurality of holding pins 245 project from the holding surface of the upper chuck 230 by lowering. In that state, the plurality of holding pins 245 vacuum-suck the upper wafer W1 and receive it from the transfer device 61. After that, the plurality of holding pins 245 are raised, and the upper wafer W1 is brought into contact with the holding surface of the upper chuck 230. Subsequently, the upper chuck 230 horizontally vacuum-sucks the upper wafer W1 in each region 230a, 230b, 230c by the operation of the vacuum pumps 241a, 241b, 241c.

Further, a through hole 243 that penetrates the upper chuck 230 in the vertical direction is formed in the central portion of the upper chuck 230. A pushing portion 250, which will be described later, is inserted through the through hole 243. The pushing portion 250 pushes down the center of the upper wafer W1 arranged at a distance from the lower wafer W2 and brings it into contact with the lower wafer W2.

The push unit 250 has a push pin 251 and an outer cylinder 252 that is an elevating guide for the push pin 251. The push pin 251 is inserted into the through hole 243 by, for example, a drive unit (not shown) having a built-in motor, protrudes from the holding surface of the upper chuck 230, and pushes down the center of the upper wafer W1.

The lower chuck 231 is divided into a plurality of (for example, two) regions 231a and 231b. These regions 231a and 231b are provided in this order from the central portion to the peripheral portion of the lower chuck 231. The region 231a has a circular shape in a plan view, and the region 231b has an annular shape in a plan view.

Suction tubes 260a and 260b are independently provided in each region 231a and 231b. Different vacuum pumps 261a and 261b are connected to the suction pipes 260a and 260b, respectively. The lower chuck 231 can vacuum-adsorb the lower wafer W2 for each region 231a and 231b.

The lower chuck 231 is provided with a plurality of holding pins 265 that can be raised and lowered in the vertical direction. The lower wafer W2 is placed on the upper ends of the plurality of holding pins 265. The lower wafer W2 may be vacuum-sucked to the upper ends of the plurality of holding pins 265.

The plurality of holding pins 265 project from the holding surface of the lower chuck 231 by rising. In that state, the plurality of holding pins 265 receive the lower wafer W2 from the transfer device 61. After that, the plurality of holding pins 265 are lowered, and the lower wafer W2 is brought into contact with the holding surface of the lower chuck 231. Subsequently, the upper chuck 230 horizontally vacuum-sucks the lower wafer W2 in each region 231a and 231b by the operation of the vacuum pumps 261a and 261b.

Next, the details of step S109 of FIG. 4 will be described with reference to FIGS. 9 to 11. First, the transfer device 61 carries in the upper wafer W1 and the lower wafer W2 to the joining module 41 (step S111). In step S111, the relative positions of the upper chuck 230 and the lower chuck 231 are the substrate delivery positions shown in FIGS. 6 and 7.

Next, the moving mechanism 290 moves the relative positions of the upper chuck 230 and the lower chuck 231 from the substrate delivery position shown in FIGS. 6 and 7 to the joining position shown in FIG. 8 (step S112). In step S112, the upper wafer W1 and the lower wafer W2 are aligned. As shown in FIG. 10, the first camera S1 and the second camera S2 are used for the alignment.

The first camera S1 is fixed to the upper chuck 230 and takes an image of the lower wafer W2 held by the lower chuck 231. A plurality of reference points P21 to P23 are formed in advance on the joint surface W2j of the lower wafer W2. As the reference points P21 to P23, a pattern such as an electronic circuit is used. The number of reference points can be set arbitrarily.

On the other hand, the second camera S2 is fixed to the lower chuck 231 and takes an image of the upper wafer W1 held by the upper chuck 230. A plurality of reference points P11 to P13 are formed in advance on the joint surface W1j of the upper wafer W1. As the reference points P11 to P13, a pattern such as an electronic circuit is used. The number of reference points can be set arbitrarily.

First, as shown in FIG. 10A, the moving mechanism 290 adjusts the relative horizontal positions of the first camera S1 and the second camera S2. Specifically, the moving mechanism 290 moves the lower chuck 231 in the horizontal direction so that the second camera S2 is located substantially directly below the first camera S1. Then, the moving mechanism 290 is horizontal to the second camera S2 so that the first camera S1 and the second camera S2 image a common target X and the horizontal positions of the first camera S1 and the second camera S2 match. Fine-tune the directional position.

Next, as shown in FIG. 10B, the moving mechanism 290 moves the lower chuck 231 vertically upward, and subsequently adjusts the horizontal positions of the upper chuck 230 and the lower chuck 231. Specifically, while the moving mechanism 290 moves the lower chuck 231 in the horizontal direction, the first camera S1 sequentially images the reference points P21 to P23 of the lower wafer W2, and the second camera S2 is the reference of the upper wafer W1. Points P11 to P13 are sequentially imaged. Note that FIG. 10B shows how the first camera S1 captures the reference point P21 of the lower wafer W2 and the second camera S2 captures the reference point P11 of the upper wafer W1.

The first camera S1 and the second camera S2 transmit the captured image data to the control device 90. The control device 90 controls the moving mechanism 290 based on the image data captured by the first camera S1 and the image data captured by the second camera S2, and reaches the reference points P11 to P13 of the upper wafer W1 in the vertical direction. The horizontal position of the lower chuck 231 is adjusted so that the reference points P21 to P23 of the lower wafer W2 match.

Next, as shown in FIG. 10C, the moving mechanism 290 moves the lower chuck 231 vertically upward. As a result, the distance G (see FIG. 8) between the joining surface W2j of the lower wafer W2 and the joining surface W1j of the upper wafer W1 becomes a predetermined distance, for example, 80 μm to 200 μm. A first displacement meter S3 and a second displacement meter S4 are used for adjusting the interval G.

Similar to the first camera S1, the first displacement meter S3 is fixed to the upper chuck 230 and measures the thickness of the lower wafer W2 held by the lower chuck 231. For example, the first displacement meter S3 irradiates the lower wafer W2 with light, receives the reflected light reflected on both the upper and lower surfaces of the lower wafer W2, and measures the thickness of the lower wafer W2. The measurement of the thickness is performed, for example, when the moving mechanism 290 moves the lower chuck 231 in the horizontal direction. The measuring method of the first displacement meter S3 is, for example, a confocal method, a spectral interference method, a triangular distance measuring method, or the like. The light source of the first displacement meter S3 is an LED or a laser.

On the other hand, the second displacement meter S4 is fixed to the lower chuck 231 and measures the thickness of the upper wafer W1 held by the upper chuck 230, similarly to the second camera S2. For example, the second displacement meter S4 irradiates the upper wafer W1 with light, receives the reflected light reflected on both the upper and lower surfaces of the upper wafer W1, and measures the thickness of the upper wafer W1. The measurement of the thickness is performed, for example, when the moving mechanism 290 moves the lower chuck 231 in the horizontal direction. The measuring method of the second displacement meter S4 is, for example, a confocal method, a spectral interference method, a triangular distance measuring method, or the like. The light source of the second displacement meter S4 is an LED or a laser.

The first displacement meter S3 and the second displacement meter S4 transmit the measured data to the control device 90. The control device 90 controls the moving mechanism 290 based on the data measured by the first displacement meter S3 and the data measured by the second displacement meter S4, and the vertical direction of the lower chuck 231 is set so that the interval G becomes a set value. Adjust the position.

Next, the operation of the vacuum pump 241a is stopped, and as shown in FIG. 11A, the vacuum suction of the upper wafer W1 in the region 230a is released. After that, the push pin 251 of the push portion 250 is lowered to push down the center of the upper wafer W1 and bring it into contact with the lower wafer W2 (step S113). As a result, the centers of the upper wafer W1 and the lower wafer W2 are joined to each other.

Since the joint surface W1j of the upper wafer W1 and the joint surface W2j of the lower wafer W2 are modified, first, a van der Waals force (intramolecular force) is generated between the joint surfaces W1j and W2j, and the joint surface W1j, W2j are joined to each other. Further, since the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 have already been hydrophilized, hydrophilic groups (for example, OH groups) are hydrogen-bonded, and the bonding surfaces W1j and W2j are firmly bonded to each other. ..

Next, the operation of the vacuum pump 241b is stopped, and as shown in FIG. 11B, the vacuum suction of the upper wafer W1 in the region 230b is released. Subsequently, the operation of the vacuum pump 241c is stopped, and as shown in FIG. 11C, the vacuum suction of the upper wafer W1 in the region 230c is released.

In this way, the vacuum suction of the upper wafer W1 is gradually released from the center of the upper wafer W1 toward the peripheral edge, and the upper wafer W1 gradually drops and abuts on the lower wafer W2. Then, the joining of the upper wafer W1 and the lower wafer W2 proceeds sequentially from the center to the peripheral edge (step S114). As a result, the joining surface W1j of the upper wafer W1 and the joining surface W2j of the lower wafer W2 are in contact with each other on the entire surface, and the upper wafer W1 and the lower wafer W2 are joined to obtain a polymerized wafer T. After that, the push pin 251 is raised to the original position.

Next, the moving mechanism 290 moves the relative position of the upper chuck 230 and the lower chuck 231 from the joining position shown in FIG. 8 to the substrate delivery position shown in FIGS. 6 and 7 (step S115). For example, the moving mechanism 290 first lowers the lower chuck 231 to widen the vertical distance between the lower chuck 231 and the upper chuck 230. Subsequently, the moving mechanism 290 moves the lower chuck 231 laterally, and shifts the lower chuck 231 and the upper chuck 230 laterally.

Next, the transfer device 61 carries out the polymerized wafer T to the bonding module 41 (step S116). Specifically, first, the lower chuck 231 releases the holding of the polymerized wafer T. Subsequently, a plurality of holding pins 265 are raised to pass the polymerized wafer T to the transfer device 61. After that, the plurality of holding pins 265 are lowered to their original positions.

Next, the suction surface 300 of the lower chuck 231 will be described with reference to FIG. 12. The technique of the present disclosure can also be applied to the suction surface of the upper chuck 230. In FIG. 12, the region shown by hatching is a region where suction pressure is generated. The suction surface 300 of the lower chuck 231 includes a plurality of regions that individually generate suction pressure.

For example, the suction surface 300 has an annular first region A, an annular intermediate region B, an annular second region C, and an annular peripheral edge due to the annular ribs 301, 302, 303, and 304. It is divided into a region D and. The first region A, the intermediate region B, the second region C, and the peripheral region D are arranged concentrically in this order from the center of the adsorption surface 300 toward the peripheral edge.

The suction surface 300 may include the first region A and the second region C, and may not include the intermediate region B and / or the peripheral region D. The intermediate region B is arranged between the first region A and the second region C. The peripheral region D is arranged outside the second region C.

The intermediate region B is divided into a plurality of arcuate regions B1 to B8 by the radial ribs 305. Similarly, the second region C is divided into a plurality of arcuate regions C1 to C8 by the radial ribs 305. The number of sections in the intermediate region B and the number of sections in the second area C are the same in FIG. 12, but may be different.

The peripheral region D is divided into a plurality of arcuate regions D1 to D24 by the radial ribs 306. The number of compartments in the peripheral region D is larger than the number of compartments in the second region C. By finely dividing the outermost peripheral edge region D, the order in which the suction pressure is generated can be easily adjusted, and the peripheral edges of the warped lower wafer W2 can be sucked in a desired order.

For example, it is also possible to sequentially generate adsorption pressures from the regions D1 and D13 on the first virtual straight line L1 toward the regions D7 and D19 on the second virtual straight line L2. The first virtual straight line L1 and the second virtual straight line L2 are orthogonal to each other at the center of the suction surface 300 of the lower chuck 231.

For example, regions A, regions B1 and B5, regions C1 and C5, and regions D1 and D13 are arranged on the first virtual straight line L1. Further, the area A, the areas B3 and B7, the areas C3 and C7, and the areas D7 and D19 are arranged on the second virtual straight line L2.

The first part, which is a part in the circumferential direction of the second region C, is arranged on the first virtual straight line L1. The first part is, for example, regions C1 and C5. On the other hand, the second part, which is a part of the other circumferential direction of the second region C, is arranged on the second virtual straight line L2. The second part is, for example, regions C3 and C7.

The third part, which is a part of the peripheral region D in the circumferential direction, is arranged on the first virtual straight line L1. The third part is, for example, regions D1 and D13. On the other hand, the fourth part, which is a part of the peripheral region D in the circumferential direction, is arranged on the second virtual straight line L2. The fourth part is, for example, regions D7 and D19.

The suction pressure generation unit 310 individually generates suction pressure in a plurality of regions constituting the suction surface 300. The suction pressure generating unit 310 may individually generate the suction pressure in all the regions A, B1 to B8, C1 to C8, and D1 to D24 so that the group described later can be changed as appropriate. However, the suction pressure generating unit 310 does not have to generate the suction pressure individually in all the regions.

The control device 90 controls the suction pressure generating unit 310, and controls the order in which the suction pressure is generated. The control device 90 generates adsorption pressures in a plurality of regions A, B1 to B8, C1 to C8, and D1 to D24 for each group described later. Therefore, a plurality of regions (for example, regions C1 and C5) belonging to the same group may collectively generate an adsorption pressure.

As shown in FIG. 13, the suction pressure generating unit 310 includes a plurality of sets of an individual line 311, an on-off valve 312, and a pressure controller 313. When the suction pressure generating unit 310 individually generates the suction pressure in all the regions A, B1 to B8, C1 to C8, and D1 to D24, the suction pressure generating unit 310 is individually used for each of the regions A, B1 to B8, C1 to C8, and D1 to D24. Includes line 311. The plurality of individual lines 311 are connected to regions A, B1 to B8, C1 to C8, and D1 to D24 that are different from each other.

The plurality of individual lines 311 are connected to a suction source such as a vacuum pump. The suction source sucks the gas. The suction source may be provided for each individual line 311 or may be provided in common for a plurality of individual lines 311.

The on-off valve 312 opens and closes the gas flow path of the individual line 311 under the control of the control device 90. Further, the pressure controller 313 controls the air pressure of the gas in the individual line 311 under the control of the control device 90. The pressure controller 313 is, for example, an electropneumatic regulator.

When the suction source is activated and the on-off valve 312 opens the gas flow path, a negative pressure is generated at the connection destination of the opened flow path, and a suction pressure is generated. The magnitude of the suction pressure is controlled by the pressure controller 313. On the other hand, when the on-off valve 312 blocks the gas flow path and the pressure at the connection destination of the closed flow path returns to atmospheric pressure, the generation of suction pressure is released.

Next, a first example of warpage of the lower wafer W2 will be described with reference to FIG. In FIG. 14A, the black-and-white gradation represents the height of the lower surface (non-bonding surface W2n) of the lower wafer W2 with respect to the suction surface 300 of the lower chuck 231. The closer the color is to black, the lower the height of the lower surface of the lower wafer W2, and the smaller the distance between the lower surface of the lower wafer W2 and the suction surface 300 of the lower chuck 231.

The warp of the lower wafer W2 is measured by, for example, a warp measuring device 5 (see FIG. 1). The warp measuring device 5 is provided separately from the joining device 1, and transmits the measured data to the control device 90. The warp measuring device 5 may be provided as a part of the joining device 1. As will be described later, the lower chuck 231 may include a plurality of displacement sensors in order to measure the warp of the lower wafer W2.

As shown in FIG. 14A, the lower wafer W2 is warped immediately before the control device 90 generates a suction pressure on the suction surface 300 of the lower chuck 231. The warp of the lower wafer W2 occurs when a plurality of films are laminated on a semiconductor substrate such as a silicon wafer. Each film is formed by a CVD (Chemical Vapor Deposition) method, an ALD (Atomic Layer Deposition) method, a spin-on method, or the like. Stress is generated due to the difference in thermal expansion during film formation, and the lower wafer W2 warps.

The lower surface of the lower wafer W2 has a symmetric warp, that is, a line-symmetrical warp with the first virtual straight line L1 and the second virtual straight line L2 (see FIG. 12) orthogonal to each other at the center of the suction surface 300 of the lower chuck 231. Often. This is because the Young's modulus, Poisson's ratio, and shear modulus of a semiconductor substrate such as a silicon wafer change in a 90 ° cycle. The first virtual straight line L1 and the second virtual straight line L2 extend in a specific crystal orientation of the semiconductor substrate when viewed from a direction orthogonal to the suction surface 300 (Z-axis direction).

The warp of the lower wafer W2 is represented by the distance between the lower chuck 231 and the lower wafer W2 in the first virtual straight line L1 and the second virtual straight line L2. For example, as shown in FIG. 14B, in the first virtual straight line L1, the closer to the center of the suction surface 300, the larger the distance between the suction surface 300 and the lower wafer W2. Further, as shown in FIG. 14C, in the second virtual straight line L2, the distance between the suction surface 300 and the lower wafer W2 increases as the distance from the center of the suction surface 300 increases.

Therefore, the distance between the second parts C3, C7 of the second region C and the lower wafer W2 is larger than the distance between the first parts C1, C5 of the second region C and the lower wafer W2. Further, the distance between the fourth portions D7 and D19 of the peripheral region D and the lower wafer W2 is larger than the distance between the third portions D1 and D13 of the peripheral region D and the lower wafer W2.

Next, with reference to FIGS. 15 and 1, a first example of the order in which the suction pressure is generated when the lower wafer W2 shown in FIG. 14 is sucked will be described.

For example, the control device 90 divides a plurality of regions A, B1 to B8, C1 to C8, and D1 to D24 into groups G1 to G6 shown in Table 1 to generate an adsorption pressure. The order in which the adsorption pressure is generated is the order of G1, G2, G3, G4, G5, and G6. G1 is the first and G6 is the last. The control device 90 does not release the once generated suction pressure until the suction pressure is generated in all the groups G1 to G6.

The order in which the suction pressure is generated in the first virtual straight line L1 is the order of group G1 (region A), group G2 (regions B1, B5), group G3 (regions C1, C5), and group G4 (regions D1, D13). Is. In the first virtual straight line L1, the suction pressure is sequentially generated from the center of the suction surface 300 toward the peripheral edge. Unlike the case where the order is reversed, wrinkles can be released to the outside and the occurrence of wrinkles can be suppressed.

Further, the order in which the suction pressure is generated in the second virtual straight line L2 is group G1 (region A), group G2 (regions B3, B7), group G5 (regions C3, C7), and group G6 (regions D7, D19). It is the order of. In the second virtual straight line L2, the suction pressure is sequentially generated from the center of the suction surface 300 toward the peripheral edge. Unlike the case where the order is reversed, wrinkles can be released to the outside and the occurrence of wrinkles can be suppressed.

The control device 90 of the present embodiment generates the suction pressure in the first region A, generates the suction pressure in the first parts C1 and C5 of the second region C, and the second part of the second region C. Generating suction pressure in C3 and C7 is executed in this order. First, the control device 90 generates an adsorption pressure in the first region A. Both the first virtual straight line L1 and the second virtual straight line L2 can generate a suction pressure at the center of the suction surface 300.

After that, the control device 90 generates an adsorption pressure in the first portions C1 and C5 of the second region C. As shown in FIG. 14, the first part C1 and C5 have a smaller distance from the lower wafer W2 than the second parts C3 and C7, and the degree of vacuum tends to be higher. Therefore, the lower wafer W2 can be attracted to the first parts C1 and C5. The lower wafer W2 comes into contact with the first portions C1 and C5, and the warp of the lower wafer W2 becomes smaller.

As a result, the distance between the second part C3, C7 and the lower wafer W2 is also reduced. After that, when the control device 90 generates the suction pressure in the second parts C3 and C7, it is easy to increase the degree of vacuum, and the lower wafer W2 can be attracted to the second parts C3 and C7 as well. The lower wafer W2 comes into contact with the second portions C3 and C7.

As described above, by shifting the timing of generating the suction pressure between the first part C1 and C5 and the second part C3 and C7, the degree of vacuum can be efficiently increased and the lower wafer W2 can be efficiently sucked. ..

The control device 90 of the present embodiment generates an adsorption pressure in the entire intermediate region B after the first region A and before the first parts C1 and C5 of the second region C. The lower wafer W2 can be attracted to the intermediate region B. The lower wafer W2 comes into contact with the entire intermediate region B, and the warp of the lower wafer W2 becomes smaller. As a result, the distance between the first part C1 and C5 and the lower wafer W2 is also reduced. Therefore, when the suction pressure is generated in the first part C1 and C5, it is easy to increase the degree of vacuum. By generating the adsorption pressure in the above order, wrinkles can be released to the outside.

The control device 90 of the present embodiment generates suction pressure in the first region A, generates suction pressure in the first portions C1 and C5 of the second region C, and generates suction pressure in the third portion D1 of the peripheral region D. , D13 to generate the suction pressure, the second part C3, C7 of the second region C to generate the suction pressure, and the peripheral region D, the fourth part D7, D19 to generate the suction pressure. Execute in this order.

As shown in FIG. 14, the third part D1 and D13 have a smaller distance from the lower wafer W2 than the second parts C3 and C7, and the degree of vacuum tends to be higher. Therefore, the lower wafer W2 can be attracted to the third parts D1 and D13 by generating the suction pressure in the third parts D1 and D13 before the second parts C3 and C7. The lower wafer W2 comes into contact with the third portions D1 and D13, and the warp of the lower wafer W2 becomes smaller. As a result, the distance between the second part C3, C7 and the lower wafer W2 is also reduced. Therefore, when the suction pressure is generated in the second part C3 and C7, it is easy to increase the degree of vacuum.

As shown in FIG. 14, the second parts C3 and C7 have a smaller distance from the lower wafer W2 than the fourth parts D7 and D19, and the degree of vacuum tends to be higher. Therefore, the lower wafer W2 can be attracted to the second parts C3 and C7 by generating the suction pressure in the second parts C3 and C7 before the fourth parts D7 and D19. The lower wafer W2 comes into contact with the second portions C3 and C7, and the warp of the lower wafer W2 becomes smaller. As a result, the distance between the fourth part D7 and D19 and the lower wafer W2 is also reduced. Therefore, it is easy to increase the degree of vacuum when the suction pressure is generated in the fourth part D7 and D19. The lower wafer W2 can also be attracted to the fourth part D7 and D19, and the entire lower surface of the lower wafer W2 can be adsorbed.

As shown in Table 1, the control device 90 may temporarily release the generation of the suction pressure in, for example, the groups G7 to G8 after generating the suction pressure on the entire suction surface 300. Next, the control device 90 generates the suction pressure again in the groups G7 and G8. The order of reoccurrence is the order of G7 and G8. G7 is the first and G8 is the last. As a result, the control device 90 again generates a suction pressure on the entire suction surface 300.

The control device 90 of the present embodiment generates the suction pressure in at least a part of the second region C while generating the suction pressure in the entire peripheral region D after generating the suction pressure in the entire suction surface 300. Is temporarily released, and then the adsorption pressure is generated again. Wrinkles generated in the region E1 shown in FIG. 15A can be dispersed in the region E2 shown in FIG. 15B while the entire peripheral edge of the lower wafer W2 is adsorbed.

The control device 90 of the present embodiment temporarily releases the generation of the suction pressure in the part of the intermediate region B in addition to the part of the second region C, and then generates the suction pressure again. Wrinkles can be widely dispersed by expanding the area where the generation of suction pressure is released. After that, the control device 90 regenerates the suction pressure in a part of the intermediate region B and a part of the second region C in this order. Wrinkles can escape to the outside.

Next, with reference to FIGS. 16 and 2, a second example of the order in which the suction pressure is generated when the lower wafer W2 shown in FIG. 14 is sucked will be described.

For example, the control device 90 divides a plurality of regions A, B1 to B8, C1 to C8, and D1 to D24 into groups G1 to G6 shown in Table 2 to generate an adsorption pressure. The order in which the adsorption pressure is generated is the order of G1, G2, G3, G4, G5, and G6. Since the method and order of dividing the groups G1 to G6 are the same as those in the first example, the description thereof will be omitted.

Next, the control device 90 temporarily releases the generation of the suction pressure in the groups G7 to G9 shown in Table 2 after generating the suction pressure on the entire suction surface 300. Next, the control device 90 generates the suction pressure again in the groups G7 to G9. The order of reoccurrence is the order of G7, G8, G9. G7 is the first and G9 is the last. As a result, the control device 90 again generates a suction pressure on the entire suction surface 300.

For example, the control device 90 generates suction pressure on the entire suction surface 300, and then generates suction pressure on the fourth portions D7 and D19 of the peripheral region D, while generating the suction pressure on the third portions D1 and D13 of the peripheral region D. The generation of the suction pressure in the above is temporarily released, and then the suction pressure is generated again. Since the adsorption of a part of the peripheral edge of the lower wafer W2 is released, wrinkles can be released to the outside. Of the peripheral edge of the lower wafer W, the portion that maintains adsorption is the portion with the largest warp. Compared with the case of releasing the adsorption of the portion having the largest warp, it is possible to prevent the occurrence of adsorption failure at the time of re-adsorption.

Further, the control device 90 may temporarily release the generation of the suction pressure in the first portions C1 and C5 of the second region C in addition to the third portions D1 and D13 of the peripheral region D. Wrinkles can be widely dispersed by expanding the area where the generation of suction pressure is released. After that, the control device 90 regenerates the suction pressure in the first part C1, C5 and the third part D1 and D13 in this order. Wrinkles can escape to the outside.

Further, the control device 90 may temporarily release the generation of the suction pressure in a part of the intermediate region B in addition to the first portions C1 and C5 of the second region C. Wrinkles can be widely dispersed by expanding the area where the generation of suction pressure is released. After that, the control device 90 generates suction pressure again in this order in a part of the intermediate region B, the first portions C1 and C5 of the second region C, and the third portions D1 and D13 of the peripheral region D. Wrinkles can escape to the outside.

Next, a second example of warpage of the lower wafer W2 will be described with reference to FIG. In FIG. 17A, the black-and-white gradation represents the height of the lower surface (non-bonding surface W2n) of the lower wafer W2 with respect to the suction surface 300 of the lower chuck 231. The closer the color is to black, the lower the height of the lower surface of the lower wafer W2, and the narrower the distance between the lower surface of the lower wafer W2 and the suction surface 300 of the lower chuck 231.

The warp of the lower wafer W2 has a symmetric warp, that is, a line-symmetrical warp with the first virtual straight line L1 and the second virtual straight line L2 (see FIG. 12) orthogonal to each other at the center of the suction surface 300 of the lower chuck 231. Often. The warp of the lower wafer W2 is represented by the distance between the lower chuck 231 and the lower wafer W2 in the first virtual straight line L1 and the second virtual straight line L2.

For example, as shown in FIG. 17B, the suction surface 300 and the lower wafer W2 come into contact with each other in the entire first virtual straight line L1. Further, as shown in FIG. 17C, in the second virtual straight line L2, the distance between the suction surface 300 and the lower wafer W2 increases as the distance from the center of the suction surface 300 increases.

Therefore, the distance between the second parts C3 and C7 of the second region C and the lower wafer W2 is larger than the distance between the first parts C1 and C5 of the second region C and the lower wafer W2. Further, the distance between the fourth portions D7 and D19 of the peripheral region D and the lower wafer W2 is larger than the distance between the third portions D1 and D13 of the peripheral region D and the lower wafer W2.

Next, with reference to FIGS. 18 and 3, an example of the order in which the suction pressure is generated when the lower wafer W2 shown in FIG. 17 is sucked will be described.

For example, the control device 90 divides a plurality of regions A, B1 to B8, C1 to C8, and D1 to D24 into groups G1 to G4 shown in Table 3 to generate an adsorption pressure. The order in which the adsorption pressure is generated is the order of G1, G2, G3, and G4. G1 is the first and G4 is the last. The control device 90 does not release the once generated suction pressure until the suction pressure is generated in all the groups G1 to G4.

The order in which the suction pressure is generated in the first virtual straight line L1 is the order of group G1 (region A) and group G2 (regions B1, B5, C1, C5, D1, D13). In the first virtual straight line L1, the suction pressure is sequentially generated from the center of the suction surface 300 toward the peripheral edge. Unlike the case where the order is reversed, wrinkles can be released to the outside and the occurrence of wrinkles can be suppressed.

Further, the order in which the suction pressure is generated in the second virtual straight line L2 is group G1 (region A), group G2 (regions B3, B7), group G3 (regions C3, C7), and group G4 (regions D7, D19). It is the order of. In the second virtual straight line L2, the suction pressure is sequentially generated from the center of the suction surface 300 toward the peripheral edge. Unlike the case where the order is reversed, wrinkles can be released to the outside and the occurrence of wrinkles can be suppressed.

The control device 90 generates suction pressure in the first region A, generates suction pressure in the first parts C1 and C5 of the second region C, and generates suction pressure in the second parts C3 and C7 of the second region C. Generate suction pressure and execute in this order. Therefore, the degree of vacuum can be efficiently increased, and the lower wafer W2 can be efficiently adsorbed.

The control device 90 generates an adsorption pressure in the entire intermediate region B at the same time as the first portions C1 and C5 in the second region C in order to shorten the processing time. The warp shown in FIG. 17 is smaller than the warp shown in FIG. Therefore, the lower wafer W2 can be attracted to the entire intermediate region B at the same time as the first portions C1 and C5 of the second region C.

Further, the control device 90 simultaneously generates suction pressures in the first portions C1 and C5 of the second region C and the third portions D1 and D13 of the peripheral region D in order to shorten the processing time. As shown in FIG. 17B, since the third parts D1 and D13 are in contact with the lower wafer W2 like the first parts C1 and C5, the suction pressure can be generated at the same time.

Further, the control device 90 simultaneously generates suction pressures in the second portions C3 and C7 of the second region C and the fifth portions D10 and D22 of the peripheral region D in order to shorten the processing time. The fifth parts D10 and D22 of the peripheral region D are arranged between the third parts D1 and D13 of the peripheral region D and the fourth parts D7 and D19. The control device 90 generates an adsorption pressure in the fifth parts D10 and D22 before the fourth parts D7 and D19.

The fifth part D10 and D22 have a smaller distance from the lower wafer W2 than the fourth part D7 and D19, and the degree of vacuum tends to be higher. Therefore, the lower wafer W2 can be attracted to the fifth parts D10 and D22 by generating the suction pressure in the fifth parts D10 and D22 before the fourth parts D7 and D19.

As a result, the distance between the fourth part D7 and D19 and the lower wafer W2 is also reduced. After that, when the control device 90 generates the suction pressure in the fourth parts D7 and D19, the degree of vacuum can be easily increased, and the lower wafer W2 can be attracted to the fourth parts D7 and D19 as well. The entire lower surface of the lower wafer W2 can be adsorbed.

As described above, the control device 90 generates the suction pressure in the first region A and simultaneously applies the suction pressure to the first portions C1 and C5 of the second region C and the third portions D1 and D13 of the peripheral region D. To generate the suction pressure at the same time in the second parts C3 and C7 of the second region C and the fifth parts D10 and D22 of the peripheral region D, and to generate the suction pressure in the fourth parts D7 and D19 of the peripheral region D. And to execute in this order.

Then, the control device 90 generates the suction pressure on the entire suction surface 300, and then generates the suction pressure on the fourth parts D7 and D19 of the peripheral region D, while generating the suction pressure on the third part D1 of the peripheral region D. , D13 and Part 5 D10, D22 are temporarily released from the generation of the suction pressure, and then the suction pressure is generated again. Since the adsorption of a part of the peripheral edge of the lower wafer W2 is released, wrinkles can be released to the outside. Of the peripheral edge of the lower wafer W, the portion that maintains adsorption is the portion with the largest warp. Compared with the case of releasing the adsorption of the portion having the largest warp, it is possible to prevent the occurrence of adsorption failure at the time of re-adsorption.

The control device 90 may temporarily release the generation of the suction pressure in a part of the second region C in addition to the third part D1, D13 and the fifth part D10, D22 of the peripheral region D. Wrinkles can be widely dispersed by expanding the area where the generation of suction pressure is released. After that, the suction pressure is generated again in a part of the second region C and the third parts D1, D13 and the fifth parts D10, D22 of the peripheral region D in this order. Wrinkles can escape to the outside.

Next, the displacement sensor 320 will be described with reference to FIG. 19 (A). The displacement sensor 320 measures the distance between the suction surface 300 and the substrate W. The displacement sensor 320 is, for example, a laser displacement meter. The displacement sensor 320 is a non-contact type, but may be a contact type. The lower chuck 231 includes a plurality of displacement sensors 320. The warp of the lower wafer W2 can be measured by the plurality of displacement sensors 320. Further, the contact between the lower wafer W and the suction surface 300 can be confirmed.

Next, the local suction unit 330 will be described with reference to FIGS. 19A to 19C. The lower chuck 231 includes ribs (for example, ribs 302 and 303) that partition the suction surface 300, and a local suction unit 330 that locally sucks the lower wafer W2 into a part of the region surrounded by the ribs (for example, region C3). including. A high degree of vacuum can be generated locally, and the lower wafer W2 can be attracted to the region C3.

The local suction portion 330 is preferably arranged at least in the second portions C3 and C7 of the second region C. This is because, in the second region C, the distance between the lower wafer W2 and the suction surface 300 is the largest in the second portions C3 and C7. The local suction unit 330 may be arranged in all the regions C1 to C8 of the second region C.

The local suction portion 330 is preferably arranged at least in the fourth portions D7 and D19 of the peripheral region D. This is because, in the peripheral region D, the distance between the lower wafer W2 and the suction surface 300 is the largest in the fourth portions D7 and D19. The local suction unit 330 may be arranged in all the regions D1 to D24 of the peripheral region D.

The local suction unit 330 may be arranged in the intermediate region B. The local suction unit 330 may not be arranged in the first region A.

The local suction unit 330 is, for example, a vacuum suction pad as shown in FIG. 19A, and is arranged at the same height as the ribs 302 and 303. The vacuum suction pad may be expandable and contractible, and may protrude from the ribs 302 and 303 as shown in FIG. 19B. The lower wafer W2 can be reliably attracted to the region C3.

As shown in FIG. 19C, the local suction unit 330 may be a suction pad that sucks the lower wafer W2 by the Bernoulli effect. Unlike the vacuum suction pad, the Bernoulli type suction pad can suck the lower wafer W2 in a non-contact manner.

Although the substrate processing apparatus and the embodiment of the substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above-mentioned embodiments and the like. Various changes, modifications, replacements, additions, deletions, and combinations are possible within the scope of the claims. Of course, they also belong to the technical scope of the present disclosure.

1 Joining equipment (board processing equipment)
90 Control device (control unit)
231 Lower chuck (holding part)
300 Suction surface 310 Suction pressure generating part A 1st area C 2nd area C1, C5 1st part C3, C7 2nd part W2 Lower wafer (board)

Claims (17)

A holding portion including a circular first region and an annular second region arranged outside the first region on the suction surface for sucking the substrate.
Suction pressure that individually generates suction pressure for the first region, the first part that is a part of the second region in the circumferential direction, and the second part that is a part of the other peripheral direction of the second region. The generator and
It is equipped with a control unit that controls the suction pressure generation unit.
The control unit generates a suction pressure in the first region, generates a suction pressure in the first portion of the second region, and generates a suction pressure in the second portion of the second region. A board processing device that executes the operation in this order. Immediately before the control unit generates the suction pressure on the suction surface, the substrate is warped, and the distance between the second part of the second region and the substrate is the same as that of the first part of the second region. The substrate processing apparatus according to claim 1, which is larger than the distance from the substrate. The suction surface includes a first virtual straight line passing through the center of the suction surface and a second virtual straight line at the center orthogonal to the first virtual straight line.
Immediately before the control unit generates a suction pressure on the suction surface, the substrate is warped, and in the first virtual straight line, the closer to the center, the larger the distance between the suction surface and the substrate. In the second virtual straight line, the distance between the suction surface and the substrate increases as the distance from the center increases.
The substrate processing apparatus according to claim 2, wherein the first part of the second region is arranged on the first virtual straight line, and the second part of the second region is arranged on the second virtual straight line. The adsorption surface further includes an annular intermediate region between the first region and the second region.
The suction pressure generating unit generates suction pressure in the intermediate region to generate suction pressure.
The substrate processing apparatus according to claim 3, wherein the control unit generates an adsorption pressure in the entire intermediate region after the first region and before the first portion of the second region. .. The adsorption surface further includes an annular peripheral region outside the second region.
The suction pressure generating part individually generates the suction pressure in the third part which is a part of the peripheral area in the circumferential direction and the fourth part which is a part of the other peripheral direction of the peripheral area.
The third part of the peripheral region is arranged on the first virtual straight line, and the fourth part of the peripheral region is arranged on the second virtual straight line.
The control unit generates an adsorption pressure in the first region, generates an adsorption pressure in the first portion of the second region, and generates an adsorption pressure in the third portion of the peripheral region. 3. The substrate processing apparatus described. After generating the suction pressure on the entire suction surface, the control unit generates the suction pressure in the third part of the peripheral region while generating the suction pressure in the fourth part of the peripheral region. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus is temporarily released and then the adsorption pressure is generated again. The control unit generates suction pressure on the entire suction surface, and then generates suction pressure on the fourth part of the peripheral region while generating suction pressure on the third part and the second region of the peripheral region. A claim that the generation of the suction pressure in the first part is temporarily released, and then the suction pressure is generated again in the first part of the second region and the third part of the peripheral region in this order. Item 6. The substrate processing apparatus according to Item 6. After generating the suction pressure on the entire suction surface, the control unit temporarily generates the suction pressure in at least a part of the second region while generating the suction pressure in the entire peripheral region. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus is released and then the adsorption pressure is generated again. The suction surface includes a first virtual straight line passing through the center of the suction surface and a second virtual straight line at the center orthogonal to the first virtual straight line.
Immediately before the control unit generates a suction pressure on the suction surface, the substrate is warped, and the suction surface and the substrate come into contact with each other in the entire first virtual straight line. The farther from the center, the larger the distance between the suction surface and the substrate.
The substrate processing apparatus according to claim 2, wherein the first part of the second region is arranged on the first virtual straight line, and the second part of the second region is arranged on the second virtual straight line. The adsorption surface further includes an annular intermediate region between the first region and the second region.
The suction pressure generating unit generates suction pressure in the intermediate region to generate suction pressure.
The substrate processing apparatus according to claim 9, wherein the control unit generates an adsorption pressure in the entire intermediate region at the same time as the first portion in the second region. The adsorption surface further includes an annular peripheral region outside the second region.
The suction pressure generating portion is a third part which is a peripheral part of the peripheral region, a fourth part which is another peripheral part of the peripheral region, and a further peripheral part of the peripheral region. A suction pressure is generated individually for the fifth part,
The third part of the peripheral region is arranged on the first virtual straight line, and the fourth part of the peripheral region is arranged on the second virtual straight line.
The control unit generates an adsorption pressure in the first region, simultaneously generates an adsorption pressure in the first portion of the second region and the third portion of the peripheral region, and the second region. The claim that the suction pressure is generated simultaneously in the second part of the region and the fifth part of the peripheral region, and the suction pressure is generated in the fourth part of the peripheral region in this order. 9. The substrate processing apparatus according to 9 or 10. After generating the suction pressure on the entire suction surface, the control unit generates the suction pressure in the fourth part of the peripheral region while generating the suction pressure in the third part and the fifth part of the peripheral region. The substrate processing apparatus according to claim 11, wherein the generation of the suction pressure is temporarily released, and then the suction pressure is generated again. The control unit generates the suction pressure on the entire suction surface, and then generates the suction pressure on the fourth part of the peripheral region while generating the third part, the fifth part, and the fifth part of the peripheral region. The generation of the suction pressure in the part of the second region is temporarily released, and then the part of the second region and the third part and the fifth part of the peripheral region are again in this order. The substrate processing apparatus according to claim 12, which generates an adsorption pressure. The substrate processing apparatus according to any one of claims 1 to 13, wherein the holding portion includes a plurality of displacement sensors for measuring the distance between the suction surface and the substrate. Any one of claims 1 to 14, wherein the holding portion includes a rib that partitions the suction surface, and includes a local suction portion that locally sucks the substrate W in a part of a region surrounded by the ribs. The substrate processing apparatus described in the section. A second holding portion that adsorbs the second substrate at a distance from the substrate held by the holding portion,
A pushing portion that pushes down the center of the second substrate held by the second holding portion and brings it into contact with the center of the substrate is provided.
The control unit brings the center of the second substrate into contact with the center of the substrate by the push unit, and subsequently releases the adsorption of the second substrate by the second holding portion to join the second substrate. The substrate processing apparatus according to any one of claims 1 to 15, wherein the surface and the bonding surface of the substrate are brought into contact with each other on the entire surface to be bonded. A substrate processing method including processing the substrate with the substrate adsorbed on the suction surface of the holding portion.
The suction surface includes a circular first region and an annular second region arranged outside the first region.
The second region includes a first part which is a circumferential part of the second region and a second part which is another circumferential part of the second region.
With the substrate in contact with the suction surface, the suction pressure is generated in the first region, the suction pressure is generated in the first part of the second region, and the second region is generated. A substrate processing method in which the suction pressure is generated in two parts and the suction pressure is executed in this order.

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