JP2022071757A - Semiconductor laser module - Google Patents

Abstract

To provide a semiconductor laser module whose enlargement can be suppressed.SOLUTION: In a semiconductor laser module 1, a base part 11 is formed in a plate-like shape and separates a first space part P from a second space part in a thickness direction Z. A plurality of laser beam emitters include a semiconductor laser element emitting a laser beam and a cover that covers the semiconductor laser element, and are provided at a position where the laser beam emitters can emit the laser beams to the first space part P. A folding prism 60 is provided at an end part on one side in an arrangement direction X of the base part 11, and folds the laser beams, which are emitted from the laser beam emitters to the first space part P and propagate to one side in the arrangement direction X, to the other side of the arrangement direction X and transmits the laser beams to the second space part. A condensing lens is provided in the second space part and condenses the laser beams folded by the folding prism 60. An external emission part 90 emits the laser beams condensed by the condensing lens from the second space part to the outside.SELECTED DRAWING: Figure 1

Description

The present invention relates to a semiconductor laser module.

Conventionally, as a semiconductor laser module, for example, Patent Document 1 describes a laser synthesis optical device in which a plurality of single emitter LDs are arranged side by side and a laser beam emitted from each single emitter LD is synthesized. The single emitter LD has a light emitting element that emits laser light and a sealing package that airtightly seals the light emitting element.

Japanese Unexamined Patent Publication No. 2016-10313

By the way, in the laser synthesis optical device described in Patent Document 1 described above, for example, since the light emitting element is hermetically sealed by a sealing package, a collimated lens forming parallel light may be arranged in the immediate vicinity of the light emitting element. It is difficult, and therefore, the beam size of the laser beam emitted from the collimated lens tends to be large. As a result, the laser synthesis optical device increases the beam size of the laser light beam composed of the plurality of laser beams emitted from the respective collimating lenses in the plurality of single emitter LDs, and as a result, the laser light beam is focused. Therefore, the distance required for this is long, and the total length of the laser synthesis optical device may be long.

Therefore, the present invention has been made in view of the above, and an object of the present invention is to provide a semiconductor laser module capable of suppressing an increase in size.

In order to solve the above-mentioned problems and achieve the object, the semiconductor laser module according to the present invention is formed in a plate shape and has a base portion that separates the first space portion and the second space portion with respect to the first direction. , A semiconductor laser element that emits laser light, and a plurality of laser light emitters that have a cover that covers the semiconductor laser element and are provided in the first space at a position where the laser light can be emitted, and the first. When the direction intersecting the directions is set to the second direction, the second direction is provided at one end of the second direction of the base portion, and is emitted from the plurality of laser light emitters into the first space portion. A folded optical system that folds a plurality of laser beams toward the one side in the direction toward the second space portion and directs the laser light toward the other side in the second direction, and a folded optical system provided in the second space portion that folds the laser beam toward the other side. A condensing optical system that condenses the plurality of laser beams and an external emitting unit that emits the plurality of laser beams focused by the condensing optical system to the outside from the second space portion. It is characterized by.

In the semiconductor laser module, the plurality of laser beams provided in the second space and folded back by the folded-back optical system are compressed in the state of parallel light, and the compressed plurality of laser beams are transferred to the focused optical system. It is preferable to further include an emitting compression optical system.

The semiconductor laser module further includes a reflection optical system provided in the first space portion to reflect the laser light, and the plurality of laser light emitters have directions intersecting the first direction and the second direction. When the third direction is used, the base portion is provided side by side along the second direction at one end of the third direction, and the plurality of the base portions are provided in the first space portion along the third direction. It is preferable that the laser beam is emitted and the reflected optical system reflects the plurality of laser beams emitted from the plurality of laser light emitters toward the folded optical system along the second direction.

In the semiconductor laser module, the plurality of laser light emitters are provided with the first axis direction of each of the plurality of laser lights emitted toward the reflected optical system in a positional relationship along the second direction, and the reflection. The optical system is provided so that the first axial directions of the plurality of reflected laser beams are in a positional relationship along the third direction, and the folded optical system has the first axial directions of the folded laser beams. The condensing optical system is provided in a positional relationship along the third direction, and the condensing optical system collects the plurality of laser beams folded by the folded optical system along the third direction parallel to each of the first axial directions. It is preferable to provide it in a shining positional relationship.

The semiconductor laser module according to the present invention can suppress the increase in size of the module by providing a folded optical system that folds back a plurality of laser beams emitted from a plurality of laser light emitters.

FIG. 1 is a perspective view showing a configuration example of the semiconductor laser module according to the embodiment on the first space side. FIG. 2 is a perspective view showing a configuration example of the semiconductor laser module according to the embodiment on the second space side. FIG. 3 is an exploded perspective view showing a configuration example of the semiconductor laser module according to the embodiment. FIG. 4 is a perspective view showing an example of changing the optical path of the laser beam by the optical path changing prism according to the embodiment. FIG. 5 is a perspective view showing an example of folding back of the laser beam by the folding prism according to the embodiment. FIG. 6 is a schematic plan view showing an example of propagation of the first space portion of the laser beam according to the embodiment. FIG. 7 is a schematic plan view showing an example of propagation of the second space portion of the laser beam according to the embodiment.

An embodiment (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. In addition, the components described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Further, the configurations described below can be combined as appropriate. In addition, various omissions, substitutions or changes of the configuration can be made without departing from the gist of the present invention.

[Embodiment]
The semiconductor laser module 1 according to the embodiment will be described with reference to the drawings. The semiconductor laser module 1 emits a laser luminous flux that condenses laser light LB emitted from a plurality of laser light emitters 20 to the outside. The semiconductor laser module 1 can realize a high light output that cannot be achieved by the laser light emitter alone due to the laser luminous flux. Such a high output semiconductor laser module 1 is suitable for laser welding and laser processing, and particularly those having a laser light wavelength in the visible range are used for metal processing and the like. As shown in FIGS. 1 to 3, the semiconductor laser module 1 includes a housing 10, a plurality of laser light emitters 20, a water cooling mechanism 30, a plurality of optical path changing prisms 40 as optical path changing optical systems, and reflection. It includes a plurality of reflection mirrors 50 as an optical system, a folding prism 60 as a folding optical system, a compression prism 70 as a compression optical system, a condenser lens 80, and an external emission unit 90.

Here, in the following description, the direction along the thickness of the base portion 11 of the housing 10 is referred to as the thickness direction (first direction) Z. It can be said that the thickness direction Z is a direction orthogonal to the mounting surface on which the optical component is mounted in the base portion 11. The direction in which the plurality of laser light emitters 20 are arranged is referred to as an arrangement direction (second direction) X. The arrangement direction X can be said to be a direction along the long side of the rectangular base portion 11. The direction in which the laser beam LB is emitted from the plurality of laser beam emitters 20 is referred to as a depth direction (third direction) Y. It can be said that the depth direction Y is a direction along the short side of the rectangular base portion 11. The thickness direction Z, the alignment direction X, and the depth direction Y intersect each other and are typically orthogonal to each other.

The semiconductor laser module 1 is configured by assembling a plurality of optical components to the base portion 11 of the housing 10. Specifically, in the semiconductor laser module 1, a plurality of laser light emitters 20 are provided on one side of the depth direction Y of the base portion 11, and a plurality of reflection mirrors 50 are provided on the first mounting surface 11a of the base portion 11. In addition, a plurality of optical path changing prisms 40 are provided between the plurality of laser light emitters 20 and the plurality of reflection mirrors 50 facing the plurality of laser light emitters 20 along the depth direction Y, and the folding prism 60 is provided. A compression prism 70 and a condenser lens 80 are provided on the second mounting surface 11b of the base portion 11 so as to be provided on one side of the alignment direction X of the base portion 11 and face the plurality of reflection mirrors 50 along the alignment direction X. ing. Hereinafter, the semiconductor laser module 1 will be described in detail.

The housing 10 is for assembling optical components. As shown in FIGS. 1 and 2, the housing 10 includes a base portion 11, four side wall portions 12 to 15, and a fixing plate 16. The base portion 11 is formed in a plate shape, has a predetermined thickness in the thickness direction Z, and is formed in a substantially rectangular shape when viewed from the thickness direction Z. The base portion 11 has a first mounting surface 11a for mounting an optical component on one side in the thickness direction Z, and a second mounting surface 11b for mounting another optical component on the other side in the thickness direction Z. have. The base portion 11 is surrounded by side wall portions 12 to 15. The base portion 11 is provided with, for example, a side wall portion 12 at one end in the depth direction Y, a side wall portion 13 at the other end in the depth direction Y, and one end in the alignment direction X. A side wall portion 14 is provided, a side wall portion 15 is provided at an end portion on the other side of the arrangement direction X, and these side wall portions 12 to 15 are erected along the thickness direction Z. The base portion 11 is located at the center of the four side wall portions 12 to 15 in the thickness direction Z in a state of being surrounded by the four side wall portions 12 to 15. As a result, the base portion 11 and the four side wall portions 12 to 15 form the first space portion P on one side in the thickness direction Z and the second space portion Q on the other side in the thickness direction Z. .. That is, the first space portion P is a space portion surrounded by one side surface (first mounting surface 11a) of the base portion 11 and one side portion of the four side wall portions 12 to 15 in the thickness direction Z. be. Further, the second space portion Q is a space portion surrounded by the other side surface (second mounting surface 11b) of the base portion 11 and the other side portion of the four side wall portions 12 to 15 in the thickness direction Z. be. In this way, the base portion 11 separates the first space portion P and the second space portion Q with respect to the thickness direction Z.

As shown in FIG. 3 and the like, the side wall portion 12 has a recess 12a. The recess 12a is formed by being recessed on the base portion 11 side along the depth direction Y, and is provided with a plurality of laser light emitters 20 and an optical path changing prism 40, which will be described later. The recess 12a has a plurality of fixing portions 12b and an opening portion 12c. Each of the plurality of fixing portions 12b is formed in a groove shape along the thickness direction Z, and each is arranged side by side along the arrangement direction X. Each of the plurality of fixing portions 12b fixes the optical path changing prism 40 one by one. The opening 12c is a through hole that penetrates the side wall portion 12 along the depth direction Y, and is provided at the bottom of the recess 12a. The opening 12c is formed in a long hole shape along the arrangement direction X at the bottom of the recess 12a, and the long holes are formed from one side to the other side of the arrangement direction X. The opening portion 12c communicates between the first space portion P on one side of the side wall portion 12 in the depth direction Y and the space portion on the other side of the side wall portion 12 in the depth direction Y (the space portion on the recess 12a side). ing. The opening portion 12c is a part of each of the plurality of optical path changing prisms 40 (ends on the first space portion P side in the thickness direction Z) fixed to the recesses 12a of the side wall portion 12 by the plurality of fixing portions 12b, and the depth direction Y. Facing along. As a result, the plurality of optical path changing prisms 40 can emit the laser beam LB to the first space portion P via the opening 12c, as will be described later.

As shown in FIG. 3 and the like, the side wall portion 14 has a recess 14a. The concave portion 14a is formed by being recessed on the base portion 11 side along the arrangement direction X, and a folded prism 60 described later is provided. The recess 14a has a first opening 14b and a second opening 14c. The first opening 14b is a through hole through which the side wall portions 14 are arranged and penetrates along the direction X, and is provided at the bottom of the recess 14a. The first opening 14b is formed in a long hole shape along the depth direction Y at the bottom of the recess 14a. The first opening 14b communicates the first space portion P on one side of the side wall portion 14 in the arrangement direction X with the space portion on the other side of the arrangement direction X of the side wall portions 14 (the space portion on the recess 14a side). ing. The second opening 14c is a through hole that penetrates the side wall portion 14 along the direction X, and is provided at the bottom of the recess 14a. The second opening 14c is formed in a long hole shape along the depth direction Y at the bottom of the recess 14a. The second opening 14c communicates the second space Q on one side of the side wall portion 14 in the arrangement direction X with the space portion on the other side of the side wall portion 14 in the arrangement direction X (the space portion on the recess 14a side). ing. The first opening 14b and the second opening 14c are arranged side by side along the thickness direction Z. The first reflection surface 61 of the folded prism 60 is aligned with the first opening 14b, and the second reflecting surface 62 of the folded prism 60 is aligned with the second opening 14c. As a result, as will be described later, the folded prism 60 reflects the laser beam LB incident from the first space portion P through the first opening portion 14b to the second reflecting surface 62 side by the first reflecting surface 61, and the second The laser beam LB reflected from the two reflecting surfaces 62 can be emitted to the second space portion Q via the second opening portion 14c.

As shown in FIG. 2, the side wall portion 15 has an opening portion 15a. The opening portion 15a is a through hole through which the side wall portions 15 are arranged and penetrates along the direction X, and is formed in a circular shape. The opening portion 15a communicates the second space portion Q on one side of the side wall portion 15 in the arrangement direction X with the space portion on the other side in the arrangement direction X of the side wall portions 15. The opening 15a is provided with an external emission unit 90, which will be described later.

The fixing plate 16 fixes a plurality of laser light emitters 20 in a positioned state. The fixing plate 16 is provided on the side wall portion 12, and in a state of being provided on the side wall portion 12, covers the entire recess 12a of the side wall portion 12. The fixing plate 16 is provided with a plurality of openings 16a. The plurality of openings 16a fix the laser light emitting device 20 in a state where each of the laser light emitting devices 20 is positioned one by one. Each of the plurality of openings 16a is formed in a circular shape and penetrates along the depth direction Y. The plurality of openings 16a are arranged in two rows along the arrangement direction X. In a state where the fixing plate 16 is assembled to the side wall portion 12, each of the plurality of laser light emitters 20 is inserted into each of the plurality of openings 16a. As a result, the fixing plate 16 can fix the plurality of laser light emitters 20 in a state of being properly positioned on the side wall portion 12 of the housing 10. At this time, a part of the plurality of laser light emitters 20 is housed in the recess 12a of the side wall portion 12.

The plurality of laser light emitters 20 emit laser light LB. As shown in FIG. 3, each laser light emitter 20 includes a semiconductor laser element 21, a cover 22, and a collimating lens 23 (see FIG. 6).

The semiconductor laser device 21 is an element that emits laser light LB, and is, for example, a laser diode having a single light emitting point. The semiconductor laser device 21 is, for example, a laser diode having an oscillation wavelength of 500 nm or less, which is excellent in absorption into metal. The semiconductor laser element 21 emits laser light LB when a current is applied. The laser light LB emitted from the semiconductor laser element 21 propagates while spreading along the first axis direction and the slow axis direction intersecting (orthogonal) with the first axis direction. Here, the first axis is the stacking direction of the active layer of the semiconductor laser, and is the direction in which the spread angle of the laser light LB is large. The slow axis is a direction in which the spread angle of the laser beam LB is smaller than that of the first axis.

The cover 22 covers the semiconductor laser element 21. The cover 22 is formed of, for example, metal, and as shown in FIG. 4, the base portion 22a to which the semiconductor laser element 21 is assembled and the base portion 22a along the emission direction (depth direction Y) of the semiconductor laser element 21. It is configured to include an extending tubular tubular portion 22b and a cover lens (not shown) provided in an opening on the opposite side of the tubular portion 22b from the base portion 22a to close the opening. The cover 22 covers the semiconductor laser element 21 in an airtightly sealed state and protects the semiconductor laser element 21. As a result, the cover 22 can suppress a decrease in reliability of the semiconductor laser element 21.

The collimating lens 23 adjusts the diffused light to parallel light. The collimating lens 23 is provided on the tubular portion 22b of the cover 22, and is arranged on the outer side (opposite side of the semiconductor laser element 21) of the cover lens in the tubular portion 22b. The collimating lens 23 adjusts, that is, collimates the laser light LB emitted from the semiconductor laser element 21 to parallel light.

The plurality of laser light emitters 20 configured as described above are provided in the first space portion P at positions where the laser light LB can be emitted. The plurality of laser light emitters 20 are provided side by side along the line-up direction X at one end (side wall portion 12) of the base portion 11 of the housing 10 in the depth direction Y. The plurality of laser light emitters 20 are assembled to the side wall portion 12 of the housing 10 in a state of being positioned at the plurality of openings 16a of the fixing plate 16, for example. Here, as shown in FIG. 3, the plurality of laser light emitters 20 are configured to include the first laser light emitter group 20A and the second laser light emitter group 20B. The first laser light emitting device group 20A and the second laser light emitting device group 20B are each composed of approximately the same number of laser light emitting devices 20. In this example, the first laser light emitter group 20A is composed of 13 laser light emitters 20, and the second laser light emitter group 20B is composed of 12 laser light emitters 20. In the first laser light emitter group 20A, a plurality of laser light emitters 20 are arranged along the direction X. In the second laser light emitter group 20B, a plurality of other laser light emitters 20 are arranged along the direction X. The second laser beam emitter group 20B is located on one side of the first laser beam emitter group 20A along the thickness direction Z. That is, in the plurality of laser light emitters 20, the first laser light emitter group 20A and the second laser light emitter group 20B are formed in two stages along the thickness direction Z. The plurality of laser light emitters 20 are arranged in a state where the gap between the adjacent laser light emitters 20 is as narrow as possible, and are arranged in a staggered manner.

In the plurality of laser light emitters 20, the first laser light emitter group 20A and the second laser light emitter group 20B emit laser light LB toward the reflection mirror 50 along the depth direction Y. At this time, as shown in FIGS. 4 and 6, the first laser light emitting device group 20A and the second laser light emitting device group 20B are the first laser light emitting devices 20a of the first laser light emitting device group 20A, respectively. And the optical axis of each of the second laser light emitters 20b of the second laser light emitter group 20B are alternately displaced along the alignment direction X. That is, in the plurality of laser light emitters 20, when viewed from the thickness direction Z, the optical axis of the first laser light emitter 20a and the optical axis of the second laser light emitter 20b do not overlap, and the first laser The optical axis of the light emitter 20a and the optical axis of the second laser light emitter 20b are alternately located at equal intervals along the alignment direction X. In other words, in the plurality of laser light emitters 20, when viewed from the thickness direction Z, the optical axis of the second laser light emitter 20b is the optical axis of the adjacent first laser light emitter 20a and the first laser light emission. It is located between the optical axis of the vessel 20a. By arranging them in two stages in this way, the plurality of laser light emitters 20 can suppress the increase in the width length in the arrangement direction X.

The plurality of laser light emitters 20 are provided so that the first axis directions of the plurality of emitted laser light LBs are aligned and along the direction X. In the plurality of laser light emitters 20, since the semiconductor laser element 21 is covered with the cover 22, the first axis direction can be adjusted by rotating the cover 22 around the optical axis, for example, the semiconductor laser element 21. The first axial direction can be easily adjusted as compared with the case where the laser is provided on the substrate. Since the plurality of laser light emitters 20 are provided in a positional relationship in which the first axis directions of the respective laser light LBs are aligned along the alignment direction X, it is not necessary to change the first axis direction by, for example, a dedicated optical component. , The number of dedicated optical components can be reduced.

The water cooling mechanism 30 cools a plurality of laser light emitters 20. The water cooling mechanism 30 has a housing 31 and a water cooling pipe 32.

The housing 31 is made of a metal having high thermal conductivity and is formed in a rectangular parallelepiped shape. The housing 31 has a mounting surface 31a (see FIG. 3). The mounting surface 31a is a portion on which a plurality of laser light emitters 20 are mounted. The mounting surface 31a is provided with a plurality of through holes 31b. In the plurality of through holes 31b, the electric wires of the plurality of laser light emitters 20 are inserted into the respective through holes 31b. The housing 31 is fixed in a state where the mounting surface 31a on which the plurality of laser light emitters 20 are mounted is in contact with the metallic fixing plate 16 for positioning the plurality of laser light emitters 20. At this time, the plurality of laser light emitters 20 mounted on the mounting surface 31a are respectively inserted into and positioned at each of the plurality of openings 16a of the fixing plate 16. In the housing 31, the heat generated by the plurality of laser light emitters 20 is conducted to the metallic fixing plate 16, and the heat conducted to the fixing plate 16 is conducted to the housing 31.

The water cooling pipe 32 is for flowing cooling water. The water cooling pipe 32 cools the plurality of laser light emitters 20 by discharging the heat of the plurality of laser light emitters 20 conducted to the housing 31 to the outside by the flow of cooling water.

The plurality of optical path changing prisms 40 change the optical path of the laser beam LB, and change the optical path of at least a part of the laser beam LB emitted from the plurality of laser beam emitters 20. As shown in FIG. 3, the plurality of optical path changing prisms 40 are fixed to the plurality of fixing portions 12b of the recesses 12a provided in the side wall portion 12 of the housing 10. The optical path changing prism 40 is provided so that the first axis directions of the plurality of laser beam LBs after alignment aligned by the optical path changing prism 40 are in a positional relationship along the alignment direction X. As shown in FIGS. 3 and 4, the plurality of optical path changing prisms 40 are formed in the shape of a periscope, and are formed in the shape of an oblique prism having parallelograms whose side surfaces intersect with the upper surface and the bottom surface. The plurality of optical path changing prisms 40 have a first reflecting surface 41, a second reflecting surface 42, and a main body portion 43. The main body 43 is formed of a material that transmits laser light LB, such as optical glass.

The first reflecting surface 41 is provided on the bottom surface of the main body 43 on one side (second laser light emitter group 20B side) in the thickness direction Z. The first reflecting surface 41 is formed on the bottom surface of the main body 43 on one side in the thickness direction Z at an angle of approximately 45 degrees, so that the laser light LB is totally reflected. The first reflecting surface 41 is provided so as to be inclined with respect to the depth direction Y and the thickness direction Z, and is arranged along the depth direction Y so as to face the laser light emitter 20 of the second laser light emitter group 20B. There is. The first reflecting surface 41 reflects the laser light LB emitted from the laser light emitting device 20 of the second laser light emitting device group 20B along the depth direction Y toward the second reflecting surface 42 side along the thickness direction Z. ..

The second reflecting surface 42 is provided on the upper surface of the main body 43 on the other side (first laser light emitter group 20A side) in the thickness direction Z. The second reflecting surface 42 is formed on the upper surface of the main body 43 on the other side in the thickness direction Z at an angle of approximately 45 degrees and in parallel with the first reflecting surface 41 to totally reflect the laser beam. It has become. That is, the second reflecting surface 42 is provided so as to be inclined with respect to the depth direction Y and the thickness direction Z, and is formed in parallel with the first reflecting surface 41. The second reflecting surface 42 reflects the laser beam LB reflected by the first reflecting surface 41 along the thickness direction Z toward the plurality of reflecting mirrors 50 along the depth direction Y.

The plurality of optical path changing prisms 40 configured in this way change the optical path of the laser beam LB emitted from the plurality of second laser beam emitters 20b of the second laser beam emitter group 20B. For example, as shown in FIG. 4, the plurality of optical path changing prisms 40 are the second laser beam LB2 emitted from the plurality of second laser beam emitters 20b of the second laser beam emitter group 20B along the depth direction Y. Is reflected by the first reflecting surface 41 toward the second reflecting surface 42 along the thickness direction Z, and the first laser light LB1 emitted from the first laser light emitting device 20a of the first laser light emitting device group 20A. Guide to position. Then, the plurality of optical path changing prisms 40 reflect the second laser beam LB2 guided to the position of the first laser beam LB1 by the second reflecting surface 42 toward the plurality of reflecting mirrors 50 along the depth direction Y, and the second laser beam is changed. A plurality of laser light LBs after alignment are formed by arranging the 1 laser light LB1 and the 2nd laser light LB2 in a row along the direction X.

The plurality of reflection mirrors 50 reflect the laser beam LB. As shown in FIG. 3, the plurality of reflection mirrors 50 are provided in the first space portion P and are mounted on the first mounting surface 11a of the base portion 11. The plurality of reflection mirrors 50 are arranged along the line-up direction X, and are stepped from the side of the plurality of laser light emitters 20 toward the side opposite to the plurality of laser light emitters 20 along the depth direction Y. It is arranged in a shape. In the plurality of reflection mirrors 50, for example, each reflection mirror 50 is positioned so as to be offset along the depth direction Y by one. The reflection mirror 50 is provided so that the first axis direction of each of the plurality of reflected laser light LBs is in a positional relationship along the depth direction Y. The plurality of reflection mirrors 50 are provided in the same number as the plurality of laser light emitters 20, and each has a main body 51 and a reflection surface 52.

The main body portion 51 is formed in the shape of a triangular prism, and has a triangular bottom surface portion, a triangular upper surface portion, and three rectangular side surface portions. The bottom surface of the main body 51 is fixed to the first mounting surface 11a of the base 11. The main body 51 has a reflective surface 52 formed on one of the three side surfaces.

The reflecting surface 52 reflects the laser beam LB. The reflective surface 52 is formed by forming a dielectric multilayer film on the side surface of the main body 51. The plurality of reflecting surfaces 52 are arranged along the alignment direction X, and the plurality of reflecting surfaces 52 are arranged along the depth direction Y from the side of the plurality of laser light emitters 20 toward the side opposite to the side of the plurality of laser light emitters 20. It is arranged in a staircase pattern. The plurality of reflecting surfaces 52 are positioned so that, for example, each reflecting surface 52 is displaced by one along the depth direction Y. The plurality of reflecting surfaces 52 are arranged so as to face each of the plurality of laser light emitters 20 along the depth direction Y, and are arranged so as to face the folded prism 60 along the arrangement direction X. There is. The plurality of reflecting surfaces 52 are inclined by about 45 ° with respect to the depth direction Y and about 45 ° with respect to the arrangement direction X, and reflect the laser beam LB at an angle of about 90 °. The plurality of reflecting surfaces 52 are provided in a positional relationship in which the distance between the respective laser light LBs before reflection is reflected so as to be a narrow distance after reflection. The plurality of reflecting surfaces 52 are emitted from the plurality of laser beam emitters 20 along the depth direction Y, and the plurality of aligned laser beam LBs formed by the optical path changing prism 40 are folded back along the alignment direction X, respectively. It reflects toward the prism 60.

The folding prism 60 changes the optical path by folding back the laser beam LB. The folded prism 60 is provided at one end (side wall portion 14) of the arrangement direction X of the base portion 11 of the housing 10, and is arranged in the recess 14a formed in the side wall portion 14 of the housing 10. The folded prism 60 is provided so that the first axis direction of each of the plurality of folded laser light LBs is in a positional relationship along the depth direction Y. As shown in FIGS. 3 and 5, the folded prism 60 is formed in the shape of a quadrangular prism having a pair of face portions having a trapezoidal shape. The folded prism 60 has a first reflecting surface 61, a second reflecting surface 62, and a main body portion 63.

The main body 63 is made of a material that transmits laser light LB, such as optical glass. The main body portion 63 has a first trapezoidal surface portion 63a, a second trapezoidal surface portion 63b, a first parallel surface portion 63c, a second parallel surface portion 63d, a first inclined surface portion 63e, and a second inclined surface portion 63f. The first trapezoidal surface portion 63a is formed in a trapezoidal shape, faces the second trapezoidal surface portion 63b along the depth direction Y, and is provided in parallel with the second trapezoidal surface portion 63b. The second trapezoidal surface portion 63b is formed in a trapezoidal shape, faces the first trapezoidal surface portion 63a along the depth direction Y, and is provided in parallel with the first trapezoidal surface portion 63a. The first trapezoidal surface portion 63a and the second trapezoidal surface portion 63b have the same trapezoidal shape. The first parallel surface portion 63c is formed in a rectangular shape, faces the second parallel surface portion 63d along the alignment direction X, and is provided in parallel with the second parallel surface portion 63d. The second parallel surface portion 63d is formed in a rectangular shape smaller than the first parallel surface portion 63c, faces the first parallel surface portion 63c along the alignment direction X, and is provided in parallel with the first parallel surface portion 63c. The first inclined surface portion 63e is formed in a rectangular shape, faces the second inclined surface portion 63f along the thickness direction Z, and is provided so as to be inclined with respect to the arrangement direction X and the thickness direction Z. The second inclined surface portion 63f is formed in a rectangular shape, faces the first inclined surface portion 63e along the thickness direction Z, and is provided so as to be inclined with respect to the arrangement direction X and the thickness direction Z. The first inclined surface portion 63e and the second inclined surface portion 63f have the same shape, and are provided so that the distance between the first inclined surface portions 63e and the second inclined surface portion 63f gradually increases from the second parallel surface portion 63d side to the first parallel surface portion 63c side. Has been done.

The first reflecting surface 61 is provided on the first inclined surface portion 63e of the main body portion 63. The first reflecting surface 61 is formed on the first inclined surface portion 63e of the main body portion 63 at an angle of 45 degrees to form a total reflection surface. The first reflecting surface 61 is aligned with the first opening 14b of the recess 14a of the housing 10. The first reflecting surface 61 is reflected by a plurality of reflecting mirrors 50 along the alignment direction X, and the laser beam LB that has passed through the first opening 14b is reflected toward the second reflecting surface 62 along the thickness direction Z. do.

The second reflecting surface 62 is provided on the second inclined surface portion 63f of the main body portion 63. The second reflecting surface 62 constitutes a total reflecting surface by forming the second inclined surface portion 63f of the main body portion 63 at an angle of 45 degrees and at a right angle to the first reflecting surface 61. The second reflecting surface 62 is aligned with the second opening 14c of the recess 14a of the housing 10. The second reflecting surface 62 reflects the laser beam LB reflected by the first reflecting surface 61 along the thickness direction Z toward the compression prism 70 along the alignment direction X. The laser beam LB reflected by the second reflecting surface 62 passes through the second opening 14c and propagates to the compression prism 70 side.

As shown in FIG. 5, the folded prism 60 configured in this way is emitted from the plurality of laser light emitters 20 to the first space portion P, and is directed toward one side of the arrangement direction X by the plurality of reflection mirrors 50. The reflected laser beam LB is folded back from the first space portion P to the second space portion Q, and is directed to the other side (compression prism 70 side) of the alignment direction X in the second space portion Q.

The compression prism 70 compresses the laser beam LB. As the compression prism 70, for example, a set of two anamorphic prisms can be applied. The compression prism 70 has a first compression prism 71 and a second compression prism 72.

The first compression prism 71 is formed in a right-angled triangular shape when viewed from the thickness direction Z. As shown in FIG. 2, the first compression prism 71 is provided in the second space portion Q, is mounted on the second mounting surface 11b of the base portion 11, and is fixed by the fastener 73. The first compression prism 71 has an incident surface 71a, an emitting surface 71b, and a main body portion 71c. The main body 71c is made of a material that transmits laser light LB, such as optical glass.

The incident surface 71a is a portion where the laser beam LB is incident, is provided on one side (folded prism 60 side) of the arrangement direction X of the main body portion 71c, and is formed parallel to the depth direction Y. The incident surface 71a is incident on the laser beam LB emitted from the folded prism 60 along the alignment direction X in a straight-ahead state without refracting the laser beam LB. The laser beam LB incident on the incident surface 71a propagates through the main body 71c toward the emitting surface 71b.

The emission surface 71b is a portion for emitting the laser beam LB, is provided on the other side (second compression prism 72 side) of the arrangement direction X of the main body portion 71c, and intersects with the depth direction Y. The emission surface 71b refracts the laser beam LB propagating through the main body 71c in the state of parallel light and emits it to the second compression prism 72.

The second compression prism 72 is formed in a right-angled triangular shape when viewed from the thickness direction Z, and is smaller than the first compression prism 71. The second compression prism 72 is provided in the second space portion Q, is mounted on the second mounting surface 11b of the base portion 11, and is arranged after the first compression prism 71. The second compression prism 72 is arranged, for example, between the first compression prism 71 and the condenser lens 80. The second compression prism 72 is fixed to the second mounting surface 11b of the base portion 11 by the fastener 74. The second compression prism 72 has an incident surface 72a, an emitting surface 72b, and a main body 72c. The main body 72c is formed of a material that transmits laser light LB, such as optical glass.

The incident surface 72a is a portion where the laser beam LB is incident, is provided on one side (first compression prism 71 side) of the arrangement direction X of the main body portion 72c, and intersects the depth direction Y. The incident surface 72a incidents the laser beam LB emitted from the first compression prism 71 in a straight-ahead state without refracting the laser beam LB. The laser beam LB incident on the incident surface 72a propagates through the main body 72c toward the emitting surface 72b.

The emission surface 72b is a portion for emitting the laser beam LB, is provided on the other side (condenser lens 80 side) of the arrangement direction X of the main body portion 72c, and intersects the depth direction Y. The emission surface 72b refracts the laser beam LB propagating through the main body 72c in the state of parallel light and emits it to the condenser lens 80.

The compression rate of the laser beam LB can be changed by adjusting the relative positional relationship (distance, angle) between the first compression prism 71 and the second compression prism 72. In this embodiment, the compression rate of the laser beam LB is set to about 3 times. The first compression prism 71 compresses a plurality of laser beam LBs emitted from the folded prism 60 in a state of parallel light along the depth direction Y, and emits the compressed plurality of laser beam LBs to the second compression prism 72. do. The second compression prism 72 compresses a plurality of laser light LBs emitted from the first compression prism 71 in a state of parallel light along the depth direction Y, and the compressed plurality of laser light LBs are transferred to the condenser lens 80. Emit.

The condenser lens 80 concentrates the laser beam LB. As the condenser lens 80, for example, a cylindrical lens can be applied. The condenser lens 80 includes a first condenser lens 81 as a condenser optical system and a second condenser lens 82.

The first condensing lens 81 condenses a plurality of laser beam LBs along the first axis direction. The first condenser lens 81 is provided in the second space portion Q and is fixed to the second mounting surface 11b of the base portion 11. The first condensing lens 81 is provided in a positional relationship in which a plurality of laser beam LBs emitted from the compression prism 70 are condensing along the depth direction Y parallel to the first axial direction. The first condenser lens 81 has a curved surface portion 81a, a flat surface portion 81b, and a main body portion 81c. The main body 81c is made of a material that transmits laser light LB, such as optical glass.

The curved surface portion 81a is provided on one side (compression prism 70 side) of the arrangement direction X of the main body portion 81c. The curved surface portion 81a has a convex curved shape (for example, an arc shape, an elliptical arc shape, a parabolic shape) when viewed from the thickness direction Z. The curved surface portion 81a refracts the laser beam LB emitted from the compression prism 70 and collects light along the depth direction Y parallel to the first axis direction. The laser beam LB focused by the curved surface portion 81a propagates through the main body portion 81c toward the flat surface portion 81b.

The flat surface portion 81b is provided on the other side (second condenser lens 82 side) of the main body portion 81c in the arrangement direction X. The flat surface portion 81b has a flat surface shape whose shape is parallel to the depth direction Y when viewed from the thickness direction Z.

The second condensing lens 82 condenses the laser beam LB along the slow axis direction. The second condensing lens 82 is provided in the second space portion Q, is mounted on the second mounting surface 11b of the base portion 11, and is arranged after the first condensing lens 81. The second condenser lens 82 is arranged, for example, between the first condenser lens 81 and the external emission unit 90. The second condenser lens 82 has a curved surface portion 82a, a flat surface portion 82b, and a main body portion 82c. The main body 82c is made of a material that transmits laser light LB, such as optical glass.

The curved surface portion 82a is provided on one side (first condenser lens 81 side) of the arrangement direction X of the main body portion 82c. The curved surface portion 82a has a convex curved shape (for example, an arc shape, an elliptical arc shape, a parabolic shape) when viewed from the depth direction Y. The curved surface portion 82a refracts the laser beam LB emitted from the first condensing lens 81 and condenses the laser light LB along the thickness direction Z parallel to the slow axis direction. The laser beam LB focused by the curved surface portion 82a propagates through the main body portion 82c toward the flat surface portion 82b.

The flat surface portion 82b is provided on the other side (external emission portion 90 side) of the main body portion 82c in the arrangement direction X. The flat surface portion 82b has a flat surface shape whose shape is parallel to the depth direction Y when viewed from the thickness direction Z.

The external emission unit 90 emits the laser beam LB to the outside. The external emission unit 90 has a main body cylinder portion 91 and a tip holding portion 92.

The main body cylinder portion 91 is formed in a cylindrical shape, and one end of the arrangement direction X is fitted to the opening portion 15a of the housing 10 (see FIG. 2). The main body cylinder portion 91 is provided with a holding member (not shown) for holding the optical fiber 100 inside. This holding member holds the end portion of the optical fiber 100 in a positional relationship in which the laser beam LB focused by the condenser lens 80 is incident from the end portion of the optical fiber 100.

The tip holding portion 92 holds the optical fiber 100. The tip holding portion 92 is provided at the other end of the arrangement direction X of the main body cylinder portion 91, and holds the optical fiber 100 extending to the outside from the other end side of the arrangement direction X of the main body cylinder portion 91. The external emission unit 90 configured in this way emits a plurality of laser light LBs condensed by the condenser lens 80 to the outside via the optical fiber 100.

Next, an example of propagation of the laser beam LB will be described. FIG. 6 is a schematic plan view showing an example of propagation of the first space portion P of the laser beam LB according to the embodiment. FIG. 7 is a schematic plan view showing a propagation example of the second space portion Q of the laser beam LB according to the embodiment. As shown in FIG. 6, the plurality of laser light emitters 20 emit a plurality of laser light LBs to the first space portion P along the depth direction Y. The plurality of laser light emitters 20 may generate the first laser light LB1 in a state where the first axial directions of the plurality of first laser light emitters 20a of the first laser light emitter group 20A are aligned and along the direction X, for example. The second laser beam LB2 is emitted from the plurality of second laser beam emitters 20b of the second laser beam emitter group 20B in a state where the first axial directions are aligned and along the direction X. The second laser beam LB2 emitted from the plurality of second laser beam emitters 20b has a plurality of first laser beam emitters 20a of the first laser beam emitter group 20A by each of the plurality of optical path changing prisms 40. It is guided along the thickness direction Z to the position of the first laser beam LB1 emitted from. Then, the first laser beam LB1 and the second laser beam LB2 are aligned in a row along the alignment direction X with their respective first axis directions along the alignment direction X. The plurality of laser beams LB aligned in a row by the plurality of optical path changing prisms 40 are incident on the plurality of reflection mirrors 50 along the depth direction Y with their first axis directions aligned along the alignment direction X. Will be done. The plurality of laser beams LB incident on the plurality of reflection mirrors 50 along the depth direction Y are reflected by the plurality of reflection mirrors 50 along the alignment direction X. The plurality of laser beams LB reflected by the plurality of reflection mirrors 50 are folded back by the folding prism 60 in a state where the first axis direction is along the depth direction Y, and are emitted to the compression prism 70 of the second space portion Q. (See Fig. 7). The plurality of laser beams LB emitted from the compression prism 70 are compressed by the compression prism 70. The plurality of laser beams LB compressed by the compression prism 70 are emitted to the condenser lens 80 in a state where the first axial direction thereof is along the depth direction Y. The plurality of laser beams LB emitted from the condenser lens 80 are condensed along the depth direction Y by the condenser lens 80 in a state where the first axis direction thereof is along the depth direction Y. The plurality of laser light LBs focused by the condenser lens 80 are emitted to the external emission unit 90.

As described above, the semiconductor laser module 1 according to the embodiment includes a base portion 11, a plurality of laser light emitters 20, a folded prism 60, a first condenser lens 81, and an external emission portion 90. The base portion 11 is formed in a plate shape and separates the first space portion P and the second space portion Q with respect to the thickness direction Z. The plurality of laser light emitters 20 have a semiconductor laser element 21 that emits the laser light LB and a cover 22 that covers the semiconductor laser element 21, and are provided in the first space P at a position where the laser light LB can be emitted. .. The folded prism 60 is provided at one end of the arrangement direction X of the base portion 11, and a plurality of laser beams emitted from the plurality of laser light emitters 20 to the first space portion P and directed to one side of the arrangement direction X. The LB is folded back to the second space portion Q and directed to the other side of the arrangement direction X. The first condensing lens 81 is provided in the second space portion Q, and condenses a plurality of laser beams LB folded back by the folded prism 60. The external emission unit 90 emits a plurality of laser light LBs condensed by the first condenser lens 81 to the outside from the second space portion Q.

With this configuration, since the semiconductor laser module 1 covers the semiconductor laser element 21 with the cover 22, the reliability of the semiconductor laser element 21 can be ensured. Further, in the semiconductor laser module 1, when a plurality of laser light emitters 20 in which the semiconductor laser element 21 is covered with the cover 22 are used, it is difficult to arrange the collimating lens 23 in the immediate vicinity of the semiconductor laser element 21. As the beam size of the laser beam LB emitted from the collimating lens 23 becomes larger, the distance required for condensing the laser light beam becomes longer, and the total length of the semiconductor laser module 1 tends to become longer. Since a plurality of laser beam LBs are folded back to the second space portion Q of the base portion 11, the total length of the semiconductor laser module 1 can be shortened as compared with the case where the plurality of laser beam LBs are not folded back, and as a result, the module. It is possible to suppress the increase in size of the laser. As a result, the semiconductor laser module 1 can suppress the warp and twist of the base portion 11, so that the output power of the laser light LB can be stabilized and the deterioration of reliability can be suppressed.

The semiconductor laser module 1 is provided in the second space portion Q, compresses a plurality of laser light LBs reflected by the reflection mirror 50 and folded back by the folded prism 60 in a state of parallel light, and the compressed plurality of laser beams. A compression prism 70 that emits LB to the first condenser lens 81 is further provided. With this configuration, the semiconductor laser module 1 can reduce the size of the first condenser lens 81 as compared with the case where the compression prism 70 is not provided, so that the focal length of the first condenser lens 81 can be shortened. As a result, it is possible to suppress the increase in size of the module. Further, the semiconductor laser module 1 can reduce the size of the relatively expensive first condenser lens 81, so that the component cost can be suppressed.

The semiconductor laser module 1 further includes a reflection mirror 50 provided in the first space portion P and reflecting the laser beam LB. The plurality of laser light emitters 20 are provided side by side along the direction X at one end of the base portion 11 in the depth direction Y, and the plurality of laser beams 20 are provided in the first space portion P along the depth direction Y. LB is emitted. The reflection mirror 50 reflects a plurality of laser beam LBs emitted from the plurality of laser beam emitters 20 toward the folded prism 60 along the alignment direction X. With this configuration, when the semiconductor laser module 1 is not provided with the reflection mirror 50, it is necessary to provide a plurality of laser light emitters 20 on one side (opposite side of the folded prism 60) of the arrangement direction X of the base portion 11. In this case, the width length of the arrangement direction X of the base portion 11 becomes long, and the module may become large. However, by providing the reflection mirror 50, the width length of the arrangement direction X of the base portion 11 becomes long. As a result, it is possible to suppress the increase in size of the module.

In the semiconductor laser module 1, the plurality of laser light emitters 20 are provided so that the first axis directions of the plurality of emitted laser light LBs are aligned and along the direction X. The reflection mirror 50 is provided so that the first axis direction of each of the plurality of reflected laser light LBs is in a positional relationship along the depth direction Y. The folded prism 60 is provided so that the first axis direction of each of the plurality of folded laser light LBs is in a positional relationship along the depth direction Y. The first condensing lens 81 is provided in a positional relationship in which a plurality of laser beams LB reflected by the folded prism 60 are condensed along the depth direction Y parallel to the first axis direction. With this configuration, the semiconductor laser module 1 does not need to change the first axial direction to a desired direction by, for example, a dedicated optical component. That is, the semiconductor laser module 1 has dedicated optics in the focusing direction (depth direction Y) in which the first axis direction of the laser light LB emitted by the plurality of laser light emitters 20 is focused by the first focusing lens 81. Since it is not necessary to change using parts, the number of optical parts can be reduced.

In the semiconductor laser module 1, the plurality of laser light emitters 20 are a first laser light emitter group 20A composed of a plurality of laser light emitters 20 arranged along the arrangement direction X, and along the arrangement direction X. A second laser beam emitter group 20B composed of a plurality of other laser beam emitters 20 arranged and located on one side of the first laser beam emitter group 20A along the thickness direction Z intersecting the alignment direction X. include. Then, in the plurality of laser light emitters 20, the first laser light emitter group 20A and the second laser light emitter group 20B emit laser light LB along the depth direction Y, and the first laser light emitter group 20 The optical axes of the first laser light emitters 20a of 20A and the optical axes of the second laser light emitters 20b of the second laser light emitters group 20B are alternately displaced along the alignment direction X. The optical path changing prism 40 is arranged along the depth direction Y so as to face each of the laser light emitters 20 of the second laser light emitter group 20B, and emits each laser beam of the second laser light emitter group 20B. A plurality of second laser beam LB2 emitted from the device 20 along the depth direction Y are emitted from each of the laser light emitters 20 of the first laser light emitter group 20A along the thickness direction Z. A plurality of first laser light LB1 and a plurality of second laser light LB2 are guided to the position of one laser light LB1 to form a plurality of aligned laser light LBs in which the plurality of first laser light LB1 and the plurality of second laser light LB2 are arranged in a row along the direction X.

With this configuration, since the semiconductor laser module 1 covers the semiconductor laser element 21 with the cover 22, the laser light emitter 20 is compared with the conventional semiconductor laser element 21 provided on the substrate without being covered with the cover 22. When the size is increased and the laser light emitters 20 are arranged side by side, the length of the arrangement direction X of the plurality of laser light emitters 20 tends to be long, but the plurality of laser light emitters 20 are arranged in two stages. This makes it possible to suppress the increase in size of the module. Further, even if the plurality of laser light emitters 20 are arranged in two stages, the semiconductor laser module 1 forms a plurality of aligned laser light LBs arranged in a row by the optical path changing prism 40, so that a plurality of lasers are used. The light LB can be properly focused.

In the semiconductor laser module 1, the reflection mirror 50 is provided facing the plurality of laser light emitters 20 along the depth direction Y, and the plurality of aligned laser light LBs formed by the optical path changing prism 40 are arranged. Reflects along direction X. The first condensing lens 81 collects a plurality of aligned laser light LBs reflected by the reflection mirror 50. With this configuration, the semiconductor laser module 1 can suppress the increase in size of the module.

[Modification example]
In the above description, the example in which the semiconductor laser module 1 includes the compression prism 70 has been described, but the present invention is not limited to this, and the semiconductor laser module 1 may not include the compression prism 70. In this case, it is conceivable that the semiconductor laser module 1 adjusts the size of the condenser lens 80 to collect light.

The example in which the semiconductor laser module 1 includes the reflection mirror 50 has been described, but the present invention is not limited to this, and the semiconductor laser module 1 may not include the reflection mirror 50. In this case, it is conceivable that the semiconductor laser module 1 is provided with a plurality of laser light emitters 20 arranged on one side of the arranging direction X (the side opposite to the folded prism 60).

An example has been described in which the plurality of laser light emitters 20, the optical path changing prism 40, the reflection mirror 50, the folding prism 60, and the first condenser lens 81 are provided with the first axial direction in a positional relationship along a predetermined direction. The present invention is not limited to this, and the first axial direction may be changed depending on the optical component.

The housing 10 may further include a lid member that closes the first space portion P, the second space portion Q, and the recess 14a.

The plurality of optical path changing prisms 40 and the folded prism 60 are not limited to the prisms, and may have other configurations such as a combination of reflective members (mirrors).

The compression prism 70 has described an example in which an anamorphic prism is applied, but the present invention is not limited to this, and other compression optical systems may be applied.

The condenser lens 80 has described an example of applying a cylindrical lens, but the present invention is not limited to this, and other condenser optical systems may be applied.

1 Semiconductor laser module 11 Base 20 Laser light emitter 20A 1st laser light emitter group 20B 2nd laser light emitter group 21 Semiconductor laser element 22 Cover 40 Optical path change prism (optical path change optical system)
50 Reflective mirror (reflection optical system)
60 Folded prism (folded optical system)
70 Compression prism (compression optical system)
81 First condenser lens (condensing optical system)
90 External emission unit LB Laser light LB1 First laser light LB2 Second laser light P First space part Q Second space part Z Thickness direction (first direction)
X Alignment direction (second direction)
Y Depth direction (third direction)

Claims (4)

A base portion formed in a plate shape and separating the first space portion and the second space portion with respect to the first direction,
A semiconductor laser element that emits laser light, and a plurality of laser light emitters that have a cover that covers the semiconductor laser element and are provided in the first space at a position where the laser light can be emitted.
When the direction intersecting the first direction is the second direction, the base portion is provided at one end of the second direction and is emitted from the plurality of laser light emitters to the first space portion. A folded optical system that folds a plurality of laser beams toward the one side in the second direction back into the second space portion and directs the laser light toward the other side in the second direction.
A condensing optical system provided in the second space portion and condensing the plurality of laser beams folded by the folded optical system, and a condensing optical system.
An external emission unit that emits the plurality of laser beams focused by the focusing optical system to the outside from the second space portion, and an external emission unit.
A semiconductor laser module characterized by being equipped with. A compression optical system provided in the second space portion, which compresses the plurality of laser beams folded back by the folded-back optical system in a state of parallel light, and emits the compressed plurality of laser beams to the condensing optical system. The semiconductor laser module according to claim 1, further comprising. A catadioptric system that is provided in the first space and reflects the laser beam is further provided.
When the direction intersecting the first direction and the second direction is the third direction, the plurality of laser light emitters are directed to the second direction at one end of the third direction of the base portion. The plurality of laser beams are provided side by side along the third direction to emit the plurality of laser beams into the first space portion.
The semiconductor laser according to claim 1 or 2, wherein the reflected optical system reflects the plurality of laser beams emitted from the plurality of laser light emitters toward the folded optical system along the second direction. module. The plurality of laser light emitters are provided with a positional relationship in which the first axis direction of each of the plurality of laser beams emitted toward the reflected optical system is along the second direction.
The reflected optical system is provided with a positional relationship in which the first axial direction of each of the plurality of reflected laser beams is along the third direction.
The folded optical system is provided with a positional relationship in which the first axial direction of each of the plurality of folded laser beams is along the third direction.
The third aspect of claim 3, wherein the condensing optical system is provided with a positional relationship in which the plurality of laser beams folded back by the folded optical system are focused along the third direction parallel to the first axial direction. Semiconductor laser module.

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